半导体材料的生长技术和器件
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纳微纳真空电子
纳米器件技术
异质结－超晶格－光子晶体….量子阱、纳米线、纳米管、量子点、石墨烯等
1
m
2
dQ=−
nq
dtdS
v
i
Lu et al., Phys. Rev. B, 73 033311 2006
graphite susceptor
Vertical reactor
(CCS)
Vertical reactor—Vertical reactor
Bandgap versus Lattice Constant
W a v e l e n g t h λg ( µm )
Lattice Constant a ( A )
º
Lattice Matched Direct Gap Indirect Gap
0.5
0.6
0.70.80.91.01.11.31.72.03.05.010.0
5.0
6.5
6.0
5.5 1.0
3.0
2.0
4.0
3.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
AlN
SiC
GaN InN
E g (e V )
(AlP)(GaP)
AlGaInP GaAsP AlGaAs
GaAs GaAsSb
InGaAsP
(Si)(Ge)InGaAs InAsP
(InAs)InAsSb (AlAs)
InGaP
(AlSb)
(InP)
(InSb)
InGaSb
GaSb
AlGaAsSb AlGaSb AlInSb 1.550.780.85Bandgap versus Lattice Constant
大量的穿透位错
表面以下500nm内没有发现位错。
30nm InP
71nm In0.76Ga0.24As0.52P0.48
5nm In0.76Ga0.24As0.85P0.15
x4
10nm In0.76Ga0.24As0.52P0.48
71nm In0.76Ga0.24As0.52P0.48
InP sub
Relative Omega/2Theta (second)
SEM picture of the processed InP grating with a period of ~240 nm using the laser holographic system.Spectrum of the DFB laser at CW operation at RT showing a single mode operation with an SMSR larger than 20 dB.