AON780_datasheet芯片资料

30V Dual N-Channel MOSFET

V DS

I D (at V GS =10V)22A R DS(ON) (at V GS =10V)< 21m Ω R DS(ON) (at V GS = 4.5V)

< 26m Ω

Symbol

V DS V GS

I DM I

AS , I AR E AS , E AR T J , T STG

Symbol

t ≤ 10s Steady-State Steady-State

R θJC

Maximum Junction-to-Case

°C/W

°C/W Maximum Junction-to-Ambient A D

6.275

7.5Power Dissipation

B

P D W Power Dissipation

A

P DSM W T A =70°C

172T A =25°C A

T A =25°C I DSM A T A

=70°C

I D 2214

T C =25°C T C =100°C Avalanche energy L=0.1mH C

mJ Avalanche Current

C

7Continuous Drain Current

189A 19The AON7804 is designed to provide a high efficiency synchronous buck power stage with optimal layout and board space utilization. It includes two low R DS (ON) MOSFETs in a dual DFN3x3 package. The AON7804 is well suited for use in compact DC/DC converter applications.

V Maximum

Units Parameter Absolute Maximum Ratings T A =25°C unless otherwise noted 30V V ±20Gate-Source Voltage Drain-Source Voltage 30Units Maximum Junction-to-Ambient A

°C/W R θJA 306040Junction and Storage Temperature Range -55 to 150

°C

Thermal Characteristics

48Pulsed Drain Current C

Continuous Drain

Current

Parameter

Typ Max T C =25°C

3.17T C =100°C Top View

S2D2G2

G1D1S1D2

1/6

AON7804

General Description

Features

Symbol

Min Typ Max Units BV DSS 30

V

V DS =30V, V GS =0V

1T J =55°C

5I GSS 10

µA V GS(th)Gate Threshold Voltage 1.2 1.8

2.4V I D(ON)

48

A 1721T J =125°C

232126

m Ωg FS 30S V SD 0.75

1V I S

15

A C iss 600

740888pF C oss 77110145pF C rss 5082115pF R g

0.5 1.1 1.7ΩQ g (10V)12

1518nC Q g (4.5V)6

7.59

nC Q gs 2.5nC Q gd 3nC t D(on)5

ns t r 3.5ns t D(off)19ns t f 3.5

ns

t rr 6810ns Q rr

14

18

22

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time

Drain-Source Breakdown Voltage On state drain current

I D =250µA, V GS =0V V GS =10V, V DS =5V V GS =10V, I D =8A

Reverse Transfer Capacitance I F =8A, dI/dt=500A/µs

V GS =0V, V DS =15V, f=1MHz SWITCHING PARAMETERS Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter

Conditions I DSS µA V DS =V GS I D =250µA V DS =0V, V GS = ±20V Zero Gate Voltage Drain Current Gate-Body leakage current Forward Transconductance

Diode Forward Voltage R DS(ON)Static Drain-Source On-Resistance

m ΩI S =1A,V GS =0V V DS =5V, I D =9A

V GS =4.5V, I D =7A

V GS =10V, V DS =15V, R L =1.7Ω, R GEN =3Ω

Gate resistance

V GS =0V, V DS =0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge V GS =10V, V DS =15V, I D =8A

Gate Source Charge Gate Drain Charge Total Gate Charge Body Diode Reverse Recovery Charge I F =8A, dI/dt=500A/µs

Maximum Body-Diode Continuous Current

Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime A. The value of R θJA is measured with the device mounted on 1in 2

FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design.

B. The power dissipation P D is based on T J(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial T J =25°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.

2/6

30V Dual N-Channel MOSFET

AON7804