D4KB100 ASEMI品牌氮化镓快充充电器整流桥
NCP3063-D
1.5 A, Step-Up/Down/ Inverting Switching Regulators
The NCP3063 Series is a higher frequency upgrade to the popular MC34063A and MC33063A monolithic DC−DC converters. These devices consist of an internal temperature compensated reference, comparator, a controlled duty cycle oscillator with an active current limit circuit, a driver and a high current output switch. This series was specifically designed to be incorporated in Step−Down, Step−Up and Voltage−Inverting applications with a minimum number of external components.
MARKING DIAGRAMS
8
1 SOIC−8 D SUFFIX CASE 751
3063x ALYW
G 1
V3063 ALYW
G 1
8 1
PDIP−8 P, P1 SUFFIX
CASE 626
NCP3063x AWL
YYWWG
1
NCV3063 AWL
YYWWG
Pin 1−8: Human Body Model 2000 V per AEC Q100−002; 003 or JESD22/A114; A115 Machine Model Method 200 V 2. This device contains latch−up protection and exceeds 100 mA per JEDEC Standard JESD78. 3. The relation between junction temperature, ambient temperature and Total Power dissipated in IC is TJ = TA + Rq • PD 4. The pins which are not defined may not be loaded by external signals
2SC三级管参数
型 号参 数型 号2SC1000SI-N 55V 0.1A 0.2W 80MHz2SC9822SC1008SI-N 80V 0.7A 0.8W 75MHz2SC1012A 2SC1014SI-N 50V 1.5A 7W2SC1017 2SC1030SI-N 150V 6A 50W2SC1046 2SC1047SI-N 30V 20mA 0.4W 650MHz2SC1050 2SC1051SI-N 150V 7A 60W 8MHz2SC1061 2SC1070SI-N 30V 20mA 900MHz2SC1080 2SC109SI-N 50V 0.6A 0.6W2SC1096 2SC1106SI-N 350V 2A 80W2SC1114 2SC1115SI-N 140V 10A 100W 10MHz2SC1116 2SC1161SI-P 160V 12A 120W2SC1162 2SC1172SI-N 1500V 5A 50W2SC1195 2SC1213C SI-N 50V 0.5A 0.4W UNI2SC1214 2SC1215SI-N 30V 50mA 0.4W 1.2GHZ2SC1216 2SC1226SI-N 40/50V 2A 10W 150MHz2SC1238 2SC1247A SI-N 50V 0.5A 0.4W 60MHz2SC1308 2SC1312SI-N 35V 0.1A 0.15W 100MHz2SC1318 2SC1343SI-N 150V 10A 100W 14MHz2SC1345 2SC1359SI-N 30V 30mA 0.4W 250MHz2SC1360 2SC1362SI-N 50V 0.2A 0.25W 140MHz2SC1368 2SC1382SI-N 80V 0.75A 5W 100MHz2SC1384 2SC1393SI-N 30V 20mA 250 mW 700MHz2SC1398 2SC1413A SI-N 1200V 5A 50W2SC1419 2SC1426SI-N 35V 0.2A 2.7GHz2SC1431 2SC1432N-DARL 30V 0.3A 0.3W B=402SC1439 2SC1445SI-N 100V 6A 40W 10MHz2SC1446 2SC1447SI-N 300V 0.15A 20W 80MHz2SC1448 2SC1449SI-N 40V 2A 5W 60MHz2SC1450 2SC1454SI-N 300V 4A 50W 10MHz2SC1474-4 2SC1501SI-N 300V 0.1A 10W 55MHz2SC1505 2SC1507SI-N 300V 0.2A 15W 80MHz2SC1509 2SC1515SI-N 200V 0.05A 0.2W 110MHz2SC1520 2SC1545N-DARL 40V 0.3A 0.3W B=1K2SC1567 2SC1570SI-N 55V 0.1A 0.2W 100MHz2SC1571 2SC1573SI-N 200V 0.1A 1W 80MHz2SC1577 2SC1583SI-N 50V 0.1A 0.4W 100MHz2SC1619 2SC1623SI-N 60V 0.1A 0.2W 250MHz2SC1624 2SC1627SI-N 80V 0.4A 0.8W 100MHz2SC1674 2SC1675SI-N 50V .03A 0.25W2SC1678 2SC1685SI-N 60V 0.1A 150MC UNI2SC1688 2SC1708A SI-N 120V 50mA 0.2W 150MHz2SC1729 2SC1730SI-N 30V 0.05A 1.1GHz UHF2SC1740 2SC1741SI-N 40V 0.5A 0.3W 250MHz2SC1756 2SC1760SI-N 100V 1A 7.9W 80MHz2SC1775A 2SC1781SI-N 50V 0.5A 0.35W2SC1815 2SC1815BL SI-N 60V 0.15A 0.4W B>3502SC1815GR2SC1815Y SI-N 60V 0.15A 0.4W B>1202SC1827 2SC1832N-DARL 500V 15A 150W B>102SC1841 2SC1844SI-N 60V 0.1A 0.5W 100MHz2SC1845 2SC1846SI-N 120V 0.05A 0.5W2SC1847 2SC1855SI-N 20V 20mA 0.25W 550MHz2SC1871 2SC1879N-DARL+D 120V 2A 0.8W B>12SC1890 2SC1895SI-N 1500V 6A 50W 2MHz2SC1906 2SC1907SI-N 30V 0.05A 1100MHz2SC1913 2SC1914SI-N 90V 50mA 0.2W 150MHz2SC1921 2SC1922SI-N 1500V 2.5A 50W2SC1923 2SC1929SI-N 300V 0.4A 25W 80MHz2SC1941 2SC1944SI-N 80V 6A PQ=16W2SC1945 2SC1946A SI-N 35V 7A 50W2SC1947 2SC1953SI-N 150V 0.05A 1.2W 70MHz2SC1957 2SC1959SI-N 30V 0.5A 0.5W 200MHz2SC1967 2SC1968SI-N 35V 5A 3W 470MHz2SC1969 2SC1970SI-N 40V 0.6A 5W2SC1971 2SC1972SI-N 35V 3.5A 25W2SC1975 2SC1980SI-N 120V 20mA 0.25W 200MHz2SC1984 2SC1985SI-N 80V 6A 40W 10MHz2SC2023 2SC2026SI-N 30V 0.05A 0.25W2SC2027 2SC2036SI-N 80V 1A PQ=1..4W2SC2053 2SC2055SI-N 18V 0,3A 0,5W2SC2058 2SC2060SI-N 40V 0.7A 0.75W 150MHz2SC2061 2SC2068SI-N 300V 0.05A 95MHz2SC2073 2SC2078SI-N 80V 3A 10W 150MHz2SC2086 2SC2092SI-N 75V 3A 5W 27MHz2SC2094 2SC2097SI-N 50V 15A PQ=85W2SC2120 2SC2122SI-N 800V 10A 50W2SC2166 2SC2168SI-N 200V 2A 30W 10MHz2SC2200 2SC2209SI-N 50V 1.5A 10W 150MHz2SC2216 2SC2228SI-N 160V 0.05A 0.75W >502SC2229 2SC2230SI-N 200V 0.1A 0.8W 50MHz2SC2233 2SC2235SI-N 120V 0.8A 0.9W 120MHz2SC2236 2SC2237SI-N 35V 2A PQ>7.5W 175MHz2SC2238 2SC2240SI-N 120V 50mA .3W 100MHz2SC2261 2SC2267SI-N 400/360V 0.1A 0.4W2SC2270 2SC2271SI-N 300V 0.1A 0.9W 50MHz2SC2275 2SC2283SI-N 38V 0.75A 2.8W(500MHz2SC2287 2SC2295SI-N 30V 0.03A 0.2W 250MHz2SC2307 2SC2308SI-N 55V 0.1A 0.2W 230MHz2SC2310 2SC2312SI-N 60V 6A 18.5W/27MHz2SC2314 2SC2320SI-N 50V 0,2A 0,3W2SC2329 2SC2331SI-N 150V 2A 15W POWER2SC2333 2SC2334SI-N 150V 7A 40W POWER2SC2335 2SC2336B SI-N 250V 1.5A 25W 95MHz2SC2344 2SC2347SI-N 15V 50mA 250mW 650MHz2SC23622SC2363SI-N 120V 50mA 0.5W 130MHz2SC2365 2SC2369SI-N 25V 70mA 0.25W 4.5GHz2SC2383 2SC2389SI-N 120V 50mA 0.3W 140MHz2SC2407 2SC2412SI-N 50V 0.1A 180MHz2SC2433 2SC2440SI-N 450V 5A 40W2SC2458 2SC2466SI-N 30V 0.05A 2.2GHz2SC2482 2SC2485SI-N 100V 6A 70W 15MHz2SC2486 2SC2491SI-N 100V 6A 40W 15MHz2SC2497 2SC2498SI-N 30V 0.05A 0.3W 3.5GHz2SC2508 2SC2510SI-N 55V 20A 250W(28MHz)2SC2512 2SC2516SI-N 150V 5A 30W <0.5/2us2SC2517 2SC2538SI-N 40V 0.4A 0.7W2SC2539 2SC2542SI-N 450V 5A 40W2SC2547 2SC2551SI-N 300V 0.1A 0.4W 80MHz2SC2552 2SC2553SI-N 500V 5A 40W 1us2SC2562 2SC2563SI-N 120V 8A 80W 90MHz2SC2570A 2SC2579SI-N 160V 8A 80W 20MHz2SC2581 2SC2590SI-N 120V 0.5A 5W 250MHz2SC2592 2SC2603SI-N 50V 0.2A 0.3W2SC2610 2SC2611SI-N 300V 0.1A 0.8W 80MHz2SC2621E 2SC2625SI-N 450V 10A 80W2SC2630 2SC2631SI-N 150V 50mA 0,75W 160MHz2SC2632 2SC2634SI-N 60V 0.1A 0.4W 200MHz2SC2653 2SC2654SI-N 40V 7A 40W2SC2655 2SC2656SI-N 450V 7A 80W <1.5/4.52SC2660 2SC2668SI-N 30V 20mA 0.1W 550MHz2SC2671 2SC2682SI-N 180V 0.1A 8W 180MHz2SC2690 2SC2694SI-N 35V 20A 140W2SC2705 2SC2706SI-N 140V 10A 100W 90MHz2SC2712 2SC2714SI-N 30V 20mA 0.1W 550MHz2SC2717 2SC2724SI-N 30V 30mA 200MHz2SC2749 2SC2750SI-N 150V 15A 100W POWER2SC2751 2SC2752SI-N 500V 0.5A 10W <1/3.52SC2753 2SC2759SI-N 30V 50mA 0.2W 2.3GHz2SC2786 2SC2787SI-N 50V 30mA 0.3W 250MHz2SC2791 2SC2792SI-N 850V 2A 80W2SC2793 2SC2802SI-N 300V 0.2A 10W 80MHz2SC2808 2SC2810SI-N 500V 7A 50W 18MHz2SC2812 2SC2814SI-N 30V 0.03A 320MHz F2SC2825 2SC2837SI-N 150V 10A 100W 70MHz2SC2839 2SC2851SI-N 36V 0.3A 1W 1.5GHz2SC2873 2SC2878SI-N 20V 0.3A 0.4W 30MHz2SC2879 2SC2882SI-N 90V 0.4A 0.5W 100MHz2SC288A 2SC2898SI-N 500V 8A 50W2SC2901 2SC2908SI-N 200V 5A 50W 50MHz2SC2910 2SC2911SI-N 180V 140mA 10W 150MHz2SC2912 2SC2922SI-N 180V 17A 200W 50MHz2SC29232SC2928SI-N 1500V 5A 50W2SC2939 2SC2958SI-N 160V 0.5A 1W2SC2979 2SC2987SI-N 140V 12A 120W 60MHz2SC2988 2SC2999SI-N 20V 30mA 750MHz2SC3001 2SC3019SI-N 35V 0.4A 0.6W 520MHz2SC3020 2SC3022SI-N 35V 7A 50W2SC3026 2SC3030N-DARL 900V 7A 80W2SC3039 2SC3042SI-N 500/400V 12A 100W2SC3052F 2SC3063SI-N 300V 0.1A 1.2W 140MHz2SC3067 2SC3068SI-N 30V 0.3A Ueb=15V B>82SC3071 2SC3073SI-N 30V 3A 15W 100MHz2SC3074 2SC3075SI-N 500V 0.8A 10W 1/1.5us2SC3089 2SC3101SI-N 250V 30A 200W 25MHz2SC3102 2SC3112SI-N 50V 0.15A 0.4W 100MHz2SC3116 2SC3117SI-N 180V 1.5A 10W 120MHz2SC3133 2SC3148SI-N 900V 3A 40W 1us2SC3150 2SC3153SI-N 900V 6A 100W2SC3157 2SC3158SI-N 500V 7A 60W2SC3164 2SC3169SI-N 500V 2A 25W >8MHz2SC3175 2SC3178SI-N 1200V 2A 60W2SC3179 2SC3180N SI-N 80V 6A 60W 30MHz2SC3181N 2SC3182N SI-N 140V 10A 100W 30MHz2SC3195 2SC3199SI-N 60V 0.15A 0.2W 130MHz2SC3200 2SC3202SI-N 35V 0.5A 0.5W 300MHz2SC3203 2SC3205SI-N 30V 2A 1W 120MHz2SC3206 2SC3210SI-N 500V 10A 100W 1us2SC3211 2SC3212SI-N 800V 7A 3W 3.5MHz2SC3225 2SC3231SI-N 200V 4A 40W 8MHz2SC3240 2SC3242SI-N 20V 2A 0.9W 80MHz2SC3244E 2SC3245A SI-N 150V 0.1A 0.9W 200MHz2SC3246 2SC3247SI-N 50V 1A .9W 130MHz B>2SC3257 2SC3258SI-N 100V 5A 30W 120MHz2SC3260 2SC3262N-DARL 800V 10A 100W2SC3263 2SC3264SI-N 230V 17A 200W 60MHz2SC3271 2SC3277SI-N 500V 10A 90W 20MHz2SC3279 2SC3280SI-N 160V 12A 120W 30MHz2SC3281 2SC3284SI-N 150V 14A 125W 60MHz2SC3293 2SC3297SI-N 30V 3A 15W 100MHz2SC3299 2SC3300SI-N 100V 15A 100W2SC3303 2SC3306SI-N 500V 10A 100W 1us2SC3307 2SC3309SI-N 500V 2A 20W 1us2SC3310 2SC3311SI-N 60V 0.1A 0.3W 150MHz2SC3320 2SC3326SI-N 20V 0.3A 0.15W 30MHz2SC3327 2SC3328SI-N 80V 2A 0.9W 100MHz2SC3330 2SC3331SI-N 60V 0.2A 0.5W 200MHz2SC3332 2SC3334SI-N 250V 50mA 0.9W 100MHz2SC3345 2SC3346SI-N 80V 12A 40W 0.2us2SC33552SC3356SI-N 20V 0.1A 0.2W 7GHz2SC3377 2SC3378SI-N 120V 0.1A 0.2W 100MHz2SC3379 2SC33812xSI-N 80V 0.1A 0.4W 170MHz2SC3383 2SC3397SI-N 50V 0.1A 250MHz 46K/2SC3399 2SC3400SI-N 50V 0.1A 250MHz 22K/2SC3401 2SC3402SI-N 50V 0.1A 250MHz 10K/2SC3405 2SC3409SI-N 900V 2A 80W .8uS2SC3416 2SC3419SI-N 40V 0.8A 5W 100MHz2SC3420 2SC3421O SI-N 120V 1A 1.5W BJT O-G2SC3421Y 2SC3422Y SI-N 40V 3A 10W 100MHz2SC3423 2SC3425SI-N 500V 0.8A 10W2SC3446 2SC3447SI-N 800V 5A 50W 18MHz2SC3456 2SC3457SI-N 1100V 3A 50W2SC3460 2SC3461SI-N 1100/800V 8A 120W2SC3466 2SC3467SI-N 200V 0.1A 1W 150MHz2SC3468 2SC3486SI-N 1500V 6A 120W2SC3502 2SC3503SI-N 300V 0.1A 7W 150MHz2SC3504 2SC3505SI-N 900V 6A 80W2SC3507 2SC3509N-DARL+D 900V 10A 100W 0.2SC3514 2SC3518SI-N 60V 5A 10W2SC3520 2SC3526SI-N 110V 0.15A 7A 30W 1us2SC3528 2SC3549SI-N 900V 3A 40W2SC3552 2SC3568SI-N 150V 10A 30W2SC3571 2SC3577SI-N 850V 5A 80W 6MHz2SC3581 2SC3591SI-N 400V 7A 50W2SC3595 2SC3596SI-N 80V 0.3A 8W 700MHz2SC3597 2SC3599SI-N 120V 0.3A 8W 500MHz2SC3600 2SC3601SI-N 200V 0.15A 7W 400MHz2SC3608 2SC3611SI-N 50V 0.15A 4W 300MHz2SC3616 2SC3621SI-N 150V 1.5A 10W 100MHz2SC3623 2SC3632SI-N 600V 1A 10W 30MHz2SC3636 2SC3642SI-N 1200V 6A 100W 200ns2SC3655 2SC3656SI-N 50V 0.1A 0.4W 10K/102SC3659 2SC3668SI-N 50V 2A 1W 100MHz2SC3669 2SC3675SI-N 1500/900V 0.1A 10W2SC3678 2SC3679SI-N 900/800V 5A 100W2SC3680 2SC3684SI-N+D 1500V 10A 150W2SC3688 2SC3692SI-N 100V 7A 30W <300/1802SC373 2SC3746SI-N 80V 5A 20W 100MHz2SC3748 2SC3752SI-N 1100/800V 3A 30W2SC3781 2SC3782SI-N 200V 0.2A 15W 400MHz2SC3783 2SC3787SI-N 180V 0.14A 10W 150MHz2SC3788 2SC3789SI-N 300V 0.1A 7W 70MHz2SC3790 2SC3792SI-N 50V 0.5A 0.5W 250MHz2SC3795A 2SC3807SI-N 30V 2A 15W 260MHz2SC3808 2SC380TM SI-N 30V 50mA 0.3W 100MHz2SC3811 2SC3831SI-N 500V 10A 100W2SC38332SC3851SI-N 80V 4A 25W 15MHz2SC3852 2SC3855SI-N 200V 10A 100W 20MHz2SC3857 2SC3858SI-N 200V 17A 200W 20MHz2SC3866 2SC3868SI-N 500V 1.5A 25W 0.7us2SC3883 2SC3884A SI-N 1500V 6A 50W2SC3886A 2SC388A SI-N 25V 50mA 0.3W 300MHz2SC3890 2SC3892A SI-N+D 1500V 7A 50W 0.4us2SC3893A 2SC3895SI-N 1500/800V 8A 70W2SC3896 2SC3897SI-N 1500V 10A 70W2SC3902 2SC3907SI-N 180V 12A 130W 30MHz2SC3927 2SC394SI-N 25V 0.1A 200MC RF2SC3940 2SC3943SI-N 110V 0.15A 2W 300MHz2SC3944 2SC3948SI-N 850V 10A 75W 20MHz2SC3950 2SC3952SI-N 80V 0.5A 10W 700MHz2SC3953 2SC3954SI-N 120V 0.3A 8W 400MHz2SC3955 2SC3956SI-N 200V 0.2A 7W 70MHz2SC3964 2SC3972SI-N 800/500V 5A 40W2SC3973A 2SC3979A SI-N 800V 3A 2W 10MHz2SC3987 2SC3996SI-N 1500/800V 15A 180W2SC3998 2SC3999SI-N 300V 0.1A 0.75W 300MHz2SC4004 2SC4020SI-N 900V 3A 50W 1us2SC4024 2SC4029SI-N 230V 15A 150W 30MHz2SC4043 2SC4046SI-N 120V 0.2A 8W 350MHz2SC4052 2SC4056SI-N 600V 8A 45W2SC4059 2SC4064SI-N 50V 12A 35W 40MHz2SC4107 2SC4119N-DARL+D 1500V 15A 250W B2SC4123 2SC4125SI-N+D 1500/800V 10A 70W2SC4131 2SC4135SI-N 120V 2A 15W 200MHz2SC4137 2SC4138SI-N 500V 10A 80W <1/3.5us2SC4153 2SC4157SI-N 600V 10A 100W2SC4159 2SC4161SI-N 500V 7A 30W2SC4169 2SC4199SI-N 1400V 10A 100W2SC4200 2SC4204SI-N 30V 0.7A 0.6W2SC4231 2SC4235SI-N 1200/800V 3A 80W2SC4236 2SC4237SI-N 1200/800V 10A 150W2SC4242 2SC4256SI-N 1500V 10A 175W 6MHz2SC4278 2SC4288A SI-N1600/600V 12A 200W2SC4289A 2SC4290A SI-N 1500V 20A 200W2SC4297 2SC4298SI-N 500V 15A 80W 10MHz2SC4300 2SC4304SI-N 800V 3A 35W2SC4308 2SC4313SI-N 900V 10A 100W 0.5us2SC4381 2SC4382SI-N 200V 2A 25W 15MHz2SC4386 2SC4387SI-N 200V 10A 80W 20MHz2SC4388 2SC4408SI-N 80V 2A 0.9W 100/600ns2SC4429 2SC4430SI-N 1100V 12A 65W 15MHz2SC4431 2SC4439SI-N 180V 0.3A 8W 400MHz2SC44672SC4488SI-N 120V 1A 1W 120MHz2SC4511 2SC4512SI-N 120V 6A 50W 20MHz2SC4517 2SC4517A SI-N 1000V 3A 30W 0.5us2SC4531 2SC4532SI-N 1700V 10A 200W 2uS2SC4538 2SC454SI-N 30V 0.1A 230MHz2SC4542 2SC4547N-DARL+D 85V 3A 30W B>2K2SC4557 2SC4560SI-N 1500V 10A 80W2SC458 2SC4582SI-N 600V 100A 65W 20MHz2SC460 2SC461SI-N 30V 0.1A 0.2W 230MHz2SC4744 2SC4745SI-N 1500V 6A2SC4747 2SC4758SI-N 1500V 8A 50W HI-RES2SC4769 2SC4770SI-N 1500/800V 7A 60W2SC4793 2SC4804SI-N 900V 3A 30W 0.3us2SC4820 2SC4826SI-N 200V 3A 1.3W 300MHz2SC4834 2SC4883A SI-N 180V 2A 20W 120MHz2SC4891 2SC4908SI-N 900V 3A 35W 1us2SC4924 2SC4977SI-N 450V 7A 40W2SC5002 2SC5003SI-N+D 1500V 7A 80W2SC5027 2SC5030SI-N 50V 5A 1.3W 150MHz2SC5045 2SC5047SI-N 1600V 25A 250W2SC5048 2SC5070SI-N 30V 2A 1.5W B>8002SC5086 2SC509SI-N 35V 0.5A 0.6W 60MHz2SC5144 2SC5148SI-N 1500V 8A 50W 0.2us2SC5149 2SC5150SI-N 1700V 10A 50W 03us2SC5171 2SC5198SI-N 140V 10A 100W 30MHz2SC5207 2SC5242SI-N 230V 15A 130W 30MHz2SC5244A 2SC5296SI-N+D 1500V 8A 60W2SC5297 2SC5299SI-N 1500V 10A 70W 0.2US2SC535 2SC536SI-N 40V 0.1A 180MC UNI2SC620 2SC643SI-N 1100V 2.5A 50W2SC644 2SC645SI-N 30V 30mA 0.14W 200MHz2SC710 2SC711SI-N 30V 0.05A 150MHz2SC712 2SC717SI-N 30V 50mA 0.2W 600MHz2SC730 2SC732SI-N 50V 0.15A 0.4W 150MHz2SC735 2SC752SI-N 15V 100mA 0.1W2SC756 2SC784SI-N 40V 0.02A 500MC RF2SC815 2SC828SI-N 30V 0.05A 0.25W UNI2SC829 2SC839SI-N 50V 0.03A 250MHz2SC867 2SC869SI-N 160V 30mA 0.2W 150MHz2SC898A 2SC900SI-N 30V 0.03A 100MHz2SC930 2SC936SI-N 1000V 1A 22W POWER2SC941 2SC943SI-N 60V 0.2A 0.3W 220MHz2SC945参 数N-DARL 40V 0.3A 0.4WSI-N 250V 60mA 0.75W >80MHz SI-N 75V 1A 60mW 120MHzSI-N 1000V 3A 25WSI-N 300V 1A 40WSI-N 50V 3A 25W 8MHz=H106 SI-N 110V 12A 100W 4MHzSI-N 40V 3A 10W 60MHzSI-N 300V 4A 100W 10MHzSI-N 180V 10A 100W 10MHzSI-N 35V 1.5A 10W 180MHzSI-N 200V 2.5A 100WSI-N 50V 0.5A 0.6W 50MHzSI-N 40V 0.2A 0.3W <20/40 SI-N 35V 0.15A 5W 1.7GHzSI-N 1500V 7A 50WSI-N 60V 0.5A 0.6W 200MHz SI-N 55V 0.1A 0.1W 230MHz SI-N 50V 0.05A 1W >300MHz SI-N 25V 1.5A 8W 180MHzSI-N 60V 1A 1W 200MHzSI-N 70V 2A 15WSI-N 50V 2A 20W 5MHzSI-N 110V 2A 23W 80MHzSI-N 150V 50mA 0.5W 130MHz SI-N 300V 0.1A 10W 55MHzSI-N 150V 1.5A 25W 3MHzSI-N 150V 0.4A 20WSI-N 20V 2A 0.75W 80MHzSI-N 300V 0.2A 15WSI-N 80V 0.5A 1W 120MHzSI-N 300V 0.2A 12,5WSI-N 100V 0.5A 5W 120MHzSI-N 40V 0.1A 0.2W 100MHz SI-N 500V 8A 80W 7MHzSI-N 100V 6A 50W 10MHzSI-N 120V 1A 15W 30MHzSI-N 30V .02A 600MC RF/IF SI-N 65V 3A 3WSI-N 50V 30mA 0.4W 550MHz SI-N 35V 3.5A 16W 500MHzSI-N 40V 100mA 0.3WSI-N 300V 0.2A >50MHzSI-N 120V 0.05A 0.2W UNISI-N 50V 0.15A 0.4W 80MHz SI-N 60V 0.15A 0.4W B>200SI-N 120V 0.05A 0.5WSI-N 120V 0.05A 0.5WSI-N 50V 1.5A 1.2WSI-N 450V 15A 150W <1/3us SI-N 90V 0.05A 0.3W 200MHz SI-N 19V 0.05A 0.3WSI-N 150V 1A 15W 120MHzSI-N 250V 0.05A 0.6WSI-N 30V 20mA 10mW 550MHz SI-N 160V 50mA 0.8WSI-N 80V 6A 20WSI-N 35V 1A 4W/175MHzSI-N 40V 1A 1.8W/27MHzSI-N 35V 2A 8W 470MHzSI-N 60V 6A 20WSI-N 35V 2A 12.5WSI-N 120V 2A 3.8W 50MHzSI-N 100V 3A 30W B=700SI-N 300V 2A 40W 10MHzSI-N 1500/800V 5A 50WSI-N 40V 0.3A 0.6W 500MHz SI-N 40V 0.05A 0.25WSI-N 80V 1A 0.75W 120MHzSI-N 150V 1.5A 25W 4MHzSI-N 75V 1A 0.45W/27MHzSI-N 40V 3.5A PQ>15W 175MHz SI-N 30V 0.8A 0.6W 120MHz SI-N 75V 4A 12.5W RFPOWER SI-N 500V 7A 40W 1USSI-N 45V 50mA 0.3W 300MHz SI-N 200V 50mA 0.8W 120MHz SI-N 200V 4A 40W 8MHzSI-N 30V 1.5A 0.9W 120MHz SI-N 160V 1.5A 25W 100MHz SI-N 180V 8A 80W 15MHzSI-N 50V 5A 10W 100MHzSI-N 120V 1.5A 25W 200MHz SI-N 38V 1.5A 7.1W 175MHz SI-N 500V 12A 100W 18MHzSI-N 55V 0.1A 0.2W 230MHz SI-N 45V 1A 5WSI-N 38V 0.75A 2W 175MHzSI-N 500/400V 2A 40WSI-N 500V 7A 40W POWERSI-N 180V 1.5A 25W 120MHz SI-N 120V 50mA 0.4W 130MHzSI-N 160V 1A 0.9W 100MHzSI-N 35V 0.15A 0.16W 500MHz SI-N 120V 30A 150W 80MHzSI-N 50V 0.15A 0.2W 80MHz SI-N 300V 0.1A 0.9W 50MHz SI-N 120V 7A 80W 15MHzSI-N 70V 1.5A 5W 150MHzSI-N 40V 6A 50W 175MHzSI-N 30V 50mA 900MHz TUNE SI-N 150V 5A 30W <0.5/2us SI-N 35V 4A 17W 175MHzSI-N 120V 0.1A 0.4WSI-N 500V 2A 20WSI-N 60V 5A 25W 0.1usSI-N 25V 70mA 0.6WSI-N 200V 10A 100WSI-N 180V 1A 20W 250MHzSI-N 300V 0.1A 0.8W 80MHz SI-N 300V 0.2A 10W >50MHz SI-N 35V 14A 100WSI-N 150V 50mA 1W 160MHzSI-N 350V 0.2A 15W >50MHz SI-N 50V 2A 0.9W 0.1usSI-N 200V 2A 30W 30MHzSI-N 15V 80mA 0.6W 5.5GHz SI-N 120V 1.2A 20W 160MHz SI-N 150V 50mA 0.8W 200MHz SI-N 50V 0.15A 0.15W 80MHz SI-N 30V 50mA 0.3W 300MHz SI-N 500V 10A 100W 50MHzSI-N 500V 15A 120W 50MHzSI-N 17V 0.07A 0.3W 5GHzSI-N 20V 20mA 600MHzSI-N 900V 5A 100WSI-N 900V 5A 100WSI-N 100V 50mA 0.5W 140MHz SI-N 55V 0.15A 0.2W 100MHz SI-N 80V 6A 70W B>500SI-N 20V 30mA 0.15W 320MHz SI-N 50V 2A 0.5W 120MHzSI-N 45V 25A PEP=100W 28MHz SI-N 35V 20mA 0.15WSI-N 40V 0.2A 0.6W <12/18 SI-N 160V 70mA 0.9W 150MHz SI-N 200V 140mA 10W 150MHz SI-N 300V 0.1A 140MHzSI-N 500V 10A 100W 2.5us SI-N 800V 3A 40WSI-N 36V 0.5A 175MHzSI-N 20V 3A PQ=7W(175MHz) SI-N 35V 1A 10WSI-N 1700V 5A 50W POWERSI-N 500V 7A 52WSI-N 50V 0.2A 0.15W 200MHz 2xSI-N 130V 50mA 0.5W 160 SI-N 120V 0.2A Ueb=15V B> SI-N 60V 5A 20W 120MHzSI-N 800V 7A 80WSI-N 35V 18A 170W 520MHz SI-N 180V 0.7A 10W 120MHz SI-N 60V 6A 1.5W 27MHzSI-N 900V 3A 50W 15MHzSI-N 150V 10A 60WSI-N 500V 10A 100WSI-N 400V 7A 50W 40MHzSI-N 60V 4A 30W 15MHzSI-N 120V 8A 80W 30MHzSI-N 30V 20mA 0.1W 550MHz SI-N 120V 0.1A 0.3W 100MHz SI-N 35V 0.8A 0.6W 120MHz SI-N 150V 0.5A 0.8W 120MHz SI-N 800V 5A 70W >3MHzSI-N 40V 2A 0.9W 1usSI-N 50V 25A 110W 30MHzSI-N 100V 0.5A 0.9W 130MHz SI-N 30V 1.5A 0.9W 130MHz SI-N 250V 10A 40W 1/3.5us N-DARL 800V 3A 50W B>10SI-N 230V 15A 130WSI-N 300V 1A 5W 80MHzSI-N 10V 2A 0.75W 150MHz SI-N 200V 15A 150W 30MHz N-DARL+D 50V 1.2A 20W 180 SI-N 60V 5A 20W 0.1usSI-N 100V 5A 20W 0.2usSI-N 900V 10A 150W 1usSI-N 500V 5A 30W 1usSI-N 500V 15A 80WSI-N 50V 0.3A 0.2W 30MHz SI-N 60V 0.2A 0.3W 200MHz SI-N 180V 0.7A 0.7W 120MHz SI-N 60V 12A 40W 90MHzSI-N 20V 0.1A 0.6W 6.5GHzSI-N 20V 1.5A PQ=3WSI-N 60V 0.2A 0.5W 250MHz SI-N 50V 0.1A 250MHzSI-N 50V .1A 46K/23KOHMSI-N 900V 0.8A 20W 1usSI-N 200V 0.1A 5W 70MHzSI-N 50V 5A 10W 100MHzSI-N 120V 1A 10W 120MHzSI-N 150V 50mA 5W 200MHz SI-N 800V 7A 40W 18MHzSI-N 1100/800V 1.5A 40WSI-N 1100V 6A 100WSI-N 1200/650V 8A 120WSI-N 300V 0.1A 1W 150MHz SI-N 200V 0.1A 1.2WSI-N 70V 0.05A 0.9W 500MHz SI-N 1000/800V 5A 80WSI-N 180V 0.1A 10W 200MHz SI-N 500V 18A 130W 18MHz SI-N 500V 20A 125WSI-N 1100V 12A 150W 15MHz SI-N 500V 7A 30WSI-N 55V 0.4A 0.9W 150MHz SI-N 30V 0.5A 5W 2GHzSI-N 80V 0.5A 10W 800MHz SI-N 200V 0.1A 7W 400MHz SI-N 20V 0.08A 6.5GHzSI-N 25V 0.7A 250MHzSI-N 60V 0.15A 0.25W B=1K SI-N 900/500V 7A 80WSI-N 50V 0.1A 0.4W 46/23K SI-N+D 1700/800V 5A 50WSI-N 80V 2A 1W 0.2usSI-N 900V 3A 80WSI-N 900/800V 7A 120W 6MHz SI-N 1500V 10A 150W 0.2us SI-N 35V 0.1A 0.2W B>200 SI-N 80V 10A 30W 100/600ns SI-N 120V 0.4A 15W 500MHz SI-N 800V 5A 100WSI-N 200V 0.1A 5W 150MHz SI-N 300V 0.1A 7W 150MHz SI-N 900V 5A 40WN-DARL 80V 2A 170MHz B>80 SI-N 40V 0.1A 0.4W 450MHz SI-N 500/400V 12A 100WSI-N 80V 3A 25W 15MHzSI-N 200V 15A 150W 20MHz SI-N 900V 3A 40WSI-N+D 1500V 6A 50WSI-N 1500V 8A 50W 0.1usSI-N 500V 7A 30W 500NSSI-N+D 1500V 8A 50WSI-N 1500V 8A 70WSI-N 180V 1.5A 10W 120MHz SI-N 900V 10A 120WSI-N 30V 1A 1W 200MHzSI-N 150V 1A 40W 300MHzSI-N 30V 0.5A 5WSI-N 120V 0.2A 8W 400MHz SI-N 200V 0.1A 7W 300MHz SI-N 40V 2A 1.5W 1usSI-N 900V 7A 45WN-DARL+D 50V 3A 15WSI-N 1500V 25A 250W POWER SI-N 900/800V 1A 30W <1/4 SI-N 100V 10A 35W B>300SI-N 20V 50mA 0.15W 3.2GHz SI-N 600V 3A 40W 20MHzSI-N 600/450V 15A 130WSI-N 500/400V 10A 60WSI-N+D 1500V 7A 60WSI-N 100V 15A 60W 18MHzSI-N 25V 0.1A 300MHzSI-N 200V 7A 30W 0.5usSI-N 180V 1.5A 15W 100MHz N-DARL+D 50V 1.2A 1W B=4K SI-N 20V 0.6A 5W 2.5GHzSI-N 1200/800V 2A 30WSI-N 1200/800V 6A 100WSI-N 450/400V 7A 40WSI-N 150V 10A 100W 30MHz SI-N 1500V 16A 200WSI-N 500V 12A 75W 10MHzSI-N 900V 5A 75W 1/6usSI-N 30V 0.3A 0.6W 2.5GHz SI-N 150V 2A 25W 15MHzSI-N 160/120V 8A 75W 20MHz SI-N 200V 15A 85W 20MHzSI-N 1100/800V 8A 60WSI-N 120V 1.5A 20W 150MHz SI-N 160/120V 8A 80W 20MHzSI-N 120V 6A 30W 20MHzSI-N 900V 3A 30W 6MHzSI-N+D 1500V 10A 50WSI-N 900V 5A 80WSI-N 1500V 10A 50WSI-N 900V 10A 80W <1/5.5us SI-N 30V 0.1A 230MC UNISI-N 30V 0.1A 0.2W 230MHz SI-N 1500V 6A POWERSI-N 1500V 10A 50W 0.3us SI-N+D 1500V 7A 60WSI-N 230V 1A 2W 100MHzSI-N 450V 6A 30W 12MHzSI-N 500V 8A 45W <0.3/1.4 SI-N 1500V 15A 75WSI-N 800V 10A 70WSI-N 1500V 7A 80WSI-N 1100V 3A 50W 0.3usSI-N 1600V 15A 75WSI-N 1500V 12A 50W 0.3us SI-N 20V 80MA 7GHZSI-N 1700V 20A 200WSI-N+D 1500V 8A 50W 0.2us SI-N 180V 2A 20W 200MHzSI-N 1500V 10A 50W 0.4us SI-N 1600V 30A 200WSI-N 1500V 8A 60WSI-N 20V 20mA 0.1W 0.700M SI-N 50V 0.2A 0.25W UNISI-N 30V 50mA 0.25WSI-N 30V 0.03A 200MHzSI-N 30V 0.5A 150MHzSI-N 40V 0.4A PQ=1.5WSI-N 35V 0.4A 0.3W UNISI-N 40V 4A 10W 65MHzSI-N 60V 0.2A 0.25W 200MHz SI-N 30V 30mA 0.4W 230MHz SI-N 400V 1A 23W 8MHzSI-N 150V 7A 80W 15MHzSI-N 15V 0.03A 300MC RFSI-N 35V 20mA 0.2W 120MHz SI-N 50V 0.1A 250MC UNI。
CIBF-2021参展商名单
CIBF2021
第十四届中国国际电池技术交流会/展览会
参展商名单
由中国化学与物理电源行业协会主办、中电科能源有限公司协办的“第十四届中国国际电池技术交流会/展览会(CIBF2021)”将于3月19日在深圳会展中心隆重开幕！
CIBF是中国电池行业第一个通过商标注册保护的国际会展项目，每两年在中国举办一届。
CIBF2021包括展览会、买家洽谈会、国际先进电池前沿技术研讨会、新能源汽车及动力电池国际交流会和中国国际电池产业合作峰会等多项专场活动。
CIBF2021展会面积达到10万平方米，截止2021年3月8日，共有国内外参展商1310家，德国和韩国继续组团参展，预计参观人数达到6万人次。
CIBF2021展览会将集中展示全球动力电池、储能电池、3C电池、各种电池材料、制造设备、动力及储能系统解决方案，特别将重点展示近两年来全球在各种乘用车、新能源客车、物流车及电动两轮车用动力电池领域和新能源储能领域的一系列成果。
D1D40中文资料
Max. Surge Current, [Adc] (10Msec) Max. On-State Voltage Drop @ Rated Current [Vdc] Thermal Resistance Junction to Case RqJC[°C/W] Max On-state Resistance @ Rated Current (R DS-ON ) [Ohms] Max. Off-State Leakage Current @ Rated Voltage [mA] Max. Turn-On Time [µsec]
MAX. SURGE CURRENT (Amps)
Transient Protection
All loads are inductive, even ones that are not so labeled. An inductive load will produce harmful transient voltages when it is turned off. The more perfect the switch, the larger the transient voltages; the MOSFET output is so nearly an ideal switch that the transient voltages produced by seemingly "non-inductive" loads can cause damage if not suppressed. Diodes should be fast recovery type with PIV rated greater than supply voltage.
D444
SymbolV SymbolTyp Max 17.4305060R θJC 47.5Absolute Maximum Ratings T A =25°C unless otherwise noted Drain-Source Voltage °C/W Maximum Junction-to-Ambient A Steady-State °C/W Maximum Junction-to-Case BSteady-State°C/WThermal Characteristics ParameterUnits Maximum Junction-to-Ambient A t ≤ 10s R θJA AOD444GD-PAKTop ViewSBottom ViewDGSSymbolMin TypMaxUnits BV DSS 60V 1T J =55°C5I GSS 100nA V GS(th)1 2.43V I D(ON)30A 4760T J =125°C856785m Ωg FS 14S V SD 0.741V I S12A C iss 450540pF C oss 61pF C rss 27pF R g1.352ΩQ g (10V)7.510nC Q g (4.5V) 3.85nC Q gs 1.2nC Q gd 1.9nC t D(on) 4.2ns t r 3.4ns t D(off)16ns t f 2ns t rr 27.635ns Q rr30nCTHIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICEBody Diode Reverse Recovery Charge I F =12A, dI/dt=100A/µsMaximum Body-Diode Continuous CurrentInput Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime V GS =10V, V DS =30V, R L =2.5Ω, R GEN =3ΩGate resistanceV GS =0V, V DS =0V, f=1MHzTurn-Off Fall TimeTotal Gate Charge V GS =10V, V DS =30V, I D =12AGate Source Charge Gate Drain Charge Total Gate Charge m ΩV GS =4.5V, I D =6AI S =1A, V GS =0V V DS =5V, I D =12AR DS(ON)Static Drain-Source On-ResistanceForward TransconductanceDiode Forward VoltageI DSS µA Gate Threshold Voltage V DS =V GS , I D =250µA V DS =48V, V GS =0VV DS =0V, V GS =±20V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS ParameterConditions Body Diode Reverse Recovery TimeDrain-Source Breakdown Voltage On state drain currentI D =10mA, V GS =0V V GS =10V, V DS =5V V GS =10V, I D =12AReverse Transfer Capacitance I F =12A, dI/dt=100A/µsV GS =0V, V DS =30V, f=1MHz SWITCHING PARAMETERS A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. ThePower dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB allows it.B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used.C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C.D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C.G. The maximum current rating is limited by bond-wires.H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).Rev 3 : Sep 2008AOD444, AOD444LTYPICAL ELECTRICAL AND THERMAL CHARACTERISTICSAOD444VdsChargeGate Charge Test Circuit & WaveformVdd VddResistive Switching Test Circuit & WaveformsVddVdsIdVgsBVI Unclamped Inductive Switching (UIS) Test Circuit & WaveformsARDSS2E = 1/2 LI ARAR。
Vishay 100A INT-A-PAK 第四代超快速IGBT电路说明书
INT-A-PAK ™ “Half-Bridge” (Ultrafast Speed IGBT), 100 AFEATURES•Generation 4 IGBT technology•Ultrafast: Optimized for high speed 8 kH z to 40 kHz in hard switching,> 200 kHz in resonant mode•Very low conduction and switching losses•HEXFRED ® antiparallel diodes with ultrasoft recovery •Industry standard package•UL approved file E78996•Designed and qualified for industrial level•Material categorization: For definitions of compliance please see /doc?99912BENEFITS•Increased operating efficiency •Direct mounting to heatsink•Performance optimized for power conversion: UPS,SMPS, welding•Lower EMI, requires less snubbingPRODUCT SUMMARYV CES 1200 V I C DC182 A V CE(on) at 100 A, 25 °C2.25 VINT-A-PAKABSOLUTE MAXIMUM RATINGSPARAMETER S YMBOL TE S T CONDITION S MAX. UNIT S Collector to emitter voltage V CES 1200VContinuous collector current I C T C = 25 °C 182A T C = 93 °C100Pulsed collector current I CM Repetitive rating; V GE = 20 V, pulse width limited by maximum junction temperature200Peak switching current See fig. 17I LM 200Peak diode forward current I FM 200Gate to emitter voltage V GE ± 20V RMS isolation voltage V ISOL Any terminal to case, t = 1 minute 2500Maximum power dissipationP D T C = 25 °C 520WT C = 85 °C 270Operating junction temperature range T J - 40 to + 150°CStorage temperature rangeT Stg- 40 to + 125Note(1)Repetitive rating; V GE= 20 V, pulse width limited by maximum junction temperature ELECTRICAL SPECIFICATIONS (T J = 25 °C unless otherwise specified)PARAMETER S YMBOL TE S T CONDITION S MIN. TYP. MAX. UNIT S Collector to emitter breakdown voltage V (BR)CES V GE = 0 V, I C = 1 mA 1200--VCollector to emitter voltage V CE(on)V GE = 15 V, I C = 100 A- 2.253V GE = 15 V, I C = 100 A, T J = 125 °C -2 2.4Gate threshold voltageV GE(th)I C = 1.25 mA3.04.4 6.0Temperature coefficient of threshold voltage ∆V GE(th)/∆T JV CE = V GE , I C = 1.25 mA -- 12-mV/°C Forward transconductance g fe V CE = 25 V, I C = 100 APulse width 50 μs, single shot -136-S Collector to emitter leaking current I CES V GE = 0 V, V CE = 1200 V-0.03 1.0mA V GE = 0 V, V CE = 1200 V, T J = 125 °C - 4.210Maximum diode forward voltage V FM V GE = 0 V, I F = 100 A- 3.3 4.0V V GE = 0 V, I F = 100 A, T J = 125 °C - 3.2 3.8Gate to emitter leakage currentI GESV GE = ± 20 V--250nA SWITCHING CHARACTERISTICS (T J = 25 °C unless otherwise noted)PARAMETER S YMBOL TE S T CONDITION S MIN. TYP. MAX. UNITS Total gate charge (turn-on)Q g V CC = 400 V I C = 124 A-8301245nCGate to emitter charge (turn-on)Q ge -140210Gate to collector charge (turn-on)Q gc -275412Turn-on delay time t d(on)R g1 = 15 ΩR g2 = 0 ΩI C = 100 A V CC = 720 V V GE = ± 15 V T J = 25 °C-570-ns Rise timet r -85-Turn-off delay time t d(off)-581-Fall timet f -276-Turn-on switching energy E on -7.6-mJ Turn-off switching energy E off (1)- 6.8-Total switching energy E ts (1)-14.4-Turn-on delay time t d(on)R g1 = 15 ΩR g2 = 0 ΩI C = 100 A V CC = 720 V V GE = ± 15 V T J = 125 °C -571-ns Rise timet r -89-Turn-off delay time t d(off)-606-Fall timet f -649-Turn-on switching energy E on -10-mJ Turn-off switching energy E off (1)-16-Total switching energy E ts (1)-2645Input capacitance C ies V GE = 0 V V CC = 30 V f = 1 MHz -18 672-pF Output capacitanceC oes -830-Reverse transfer capacitance C res -161-Diode reverse recovery time t rr I C = 100 A R g1 = 15 ΩR g2 = 0 ΩV CC = 720 VdI/dt = 1300 A/μs -149-ns Diode peak reverse current I rr -104-A Diode recovery chargeQ rr -7664-nC Diode peak rate of fall of recovery during t bdI (rec)M /dt-1916-A/μsFig. 1 - Typical Load Current vs. Frequency (Load Current = I RMS of Fundamental)Fig. 2 - Typical Output CharacteristicsFig. 3 - Typical Transfer CharacteristicsTHERMAL AND MECHANICAL SPECIFICATIONSPARAMETERSYMBOLTEST CONDITION STYP.MAX. UNIT S Thermal resistance, junction to caseIGBT R thJC -0.24°C/WDiode-0.35Thermal resistance, case to sink per module R thCS0.1-Mounting torque case to heatsink- 4.0Nm case to terminal 1, 2 and 3For screws M5 x 0.8- 3.0Weight of module200-gFig. 4 - Case Temperature vs. Maximum Collector Current Fig. 5 - Typical Collector to Emitter Voltage vs.Junction TemperatureFig. 6 - Maximum Effective Transient Thermal Impedance, Junction to CaseFig. 7 - Typical Capacitance vs. Collector to Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate to Emitter VoltageFig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs.Junction TemperatureFig. 11 - Typical Switching Losses vs. Collector CurrentFig. 12 - Reverse Bias SOAFig. 13 - Typical Forward Voltage Drop vs.Instantaneous Forward CurrentFig. 14 - Typical Stored Charge vs. dI F/dtFig. 15 - Typical Reverse Recovery Time vs. dI F/dt Fig. 16 - Typical Recovery Current vs. dI F/dtFig. 17a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr,I rr, t d(on), t r, t d(off), t fFig. 17b - Test Waveforms for Circuit of Fig. 18a,Defining E off, t d(off), t f Fig. 17c - Test Waveforms for Circuit of Fig. 18a,Defining E on, t d(on), t rFig. 17d - Test Waveforms for Circuit of Fig. 18a,Defining E rec, t rr, Q rr, I rrFig. 17e - Macro Waveforms for Figure 18a‘s Test CircuitFig. 18 - Clamped Inductive Load Test Circuit Fig. 19 - Pulsed Collector Current Test CircuitORDERING INFORMATION TABLEV G Gate signaldevice under testCurrent D.U.T.Voltage in D.U.T.Current in D1t0t1t2CIRCUIT CONFIGURATIONLINKS TO RELATED DOCUMENTSDimensions/doc?95173INT-A-PAK IGBT Outline Dimensions Vishay SemiconductorsDIMENSIONS in millimeters (inches)Legal Disclaimer Notice VishayDisclaimerALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. 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最实用的场效应管参数
最实用的场效应管参数07N03L 30V 80A 150W N10N20 10A 200V N 沟道MOS管10N60 10A 600V11N80 11A 800V 156W11P06 60V 9.4A P沟道直插13N60 13A 600V N 沟道15N03L 30V 42A 83W N2N7000 60V 0.2A 0.35W N2N7000 60V 0.2A 0.35W N40N03H 30V 40A N4232 内含P沟道,N沟道MOS管各一,4532M 内含P沟道,N沟道MOS管各一,50N03L(SD 30V 47A 50W N 沟道小贴片MOS55N03 25V 55A 103W5N90 5A 900V5P25 250V 5A6030LX 30V 52A 42W N603AL 30V 25A 60W N 沟道小贴片MOS6A60 600V 6A N6N70 700V 6A N6P25 250V 6A70L0270N06 70A 60V 125W7N60 600V 7A N,铁7N70 7A 700V85L028N25 250V ,8A ,同IRF63495N03 25V 75A 125W9916H 18V 35A 58W 小贴片，全新9N60 9A 600V9N70 9A 700VAF4502CS 内含P沟道，N沟道MOS管各一A04403 30V 6.1A 单P沟道8脚贴片A04404 30V 8.5A 单N沟道8脚贴片A04405 30V 6A 3W 单P沟道8脚贴片A04406 30V,11.5A,单N沟道,8脚贴A04407 30V 12A 3W 单P沟道,8脚贴片A04407 30V 12A 3W 单P沟道,8脚贴片A04408 30V 12A 单N沟道,8脚贴片A04409 30V 15A P沟道场效应,8脚A04410 30V 18A 单N沟道8脚贴片A04411 30V 8A 3W P沟道场效应,8脚A04413 30V 15A 3W 单P沟道,8脚贴片A04413 30V 15A 3W 单P沟道,8脚贴片A04414 30V,8.5A,3WM 单N沟道，8脚A04418 30V 11.5A N沟道8脚贴片A04422 30V 11A N 沟道8脚贴片A04423 30V 15A 3.1W 单P沟道,8脚贴A04600 内含P沟道，N沟道MOS管各一A0D405 30V，18A，P高压板MOS管贴A0D408 30V，18A，P高压板MOS管贴A0D409 60V 26/18A P 高压板MOS 管贴A0D409 60V 26/18A P 高压板MOS 管贴A0D420 30V,10A,N高压板MOS管贴A0D442 60V，38/27A，N 高压板MOS管贴A0D442 60V38/27A,N高压板MOS管贴A0D444 60V,12A,N 高压板MOS管贴A0P600 内含P,N沟道各1,30V 7.5AA0P605 内含P,N沟道各1,30V 7.5AA0P607 内含P、N沟道各1，60V 4。
英飞凌600VIGBT模块型号参数资料
FP20R06YE3 FP30R06KE3 FP30R06W1E3 FP30R06YE3 FP50R06KE3 FP50R06KE3G FP100R06KE3 ◆1200V IGBT ♦ 单管（1单元） 产品型号 FZ900R12KE4 FZ900R12KP4 FZ3600R12HP4 FZ2400R12HP4_B9 BSM200GA120DLC BSM200GA120DLCS BSM200GA120DN2 BSM200GA120DN2C BSM200GA120DN2S BSM300GA120DLC BSM300GA120DLCS BSM300GA120DN2 BSM300GA120DN2S
F4-50R06W1E3 F4-75R06W1E3 ♦ 三相桥（6单元） 产品型号 FS20R06W1E3 FS30R06W1E3 FS50R06W1E3 FS10R06VL4_B2 FS15R06VL4_B2 FS10R06XL4 FS15R06XL4 FS20R06XL4 FS30R06XL4 FS6R06VE3_B2 FS30R06XE3 FS50R06YE3 FS50R06KE3 FS75R06KE3 FS100R06KE3 FS150R06KE3 FS150R06KE3_B4 FS200R06KE3 FS50R06YL4
30A，600V@Tc=80℃，IGBT2 Low Loss，饱和压降1.95V 50A，600V@Tc=80℃，IGBT2 Low BSM50GD60DLC Loss，饱和压降1.95V 75A，600V@Tc=80℃，IGBT2 Low BSM75GD60DLC Loss，饱和压降1.95V 100A，600V@Tc=80℃，IGBT2 Low BSM100GD60DLC Loss，饱和压降1.95V 150A，600V@Tc=80℃，IGBT2 Low BSM150GD60DLC Loss，饱和压降1.95V 200A，600V@Tc=80℃，IGBT2 Low BSM200GD60DLC Loss，饱和压降1.95V BSM20GD60DLC_E32 20A，600V@Tc=80℃，IGBT2 Low 24 Loss，饱和压降1.95V BSM30GD60DLC_E32 30A，600V@Tc=80℃，IGBT2 Low 24 Loss，饱和压降1.95V BSM50GD60DLC_E32 50A，600V@Tc=80℃，IGBT2 Low 26 Loss，饱和压降1.95V 10A，600V@Tc=80℃，IGBT3，饱和压降 FS10R06VE3 1.55V 10A，600V@Tc=80℃，IGBT3，饱和压降 FS10R06VE3_B2 1.55V 15A，600V@Tc=80℃，IGBT3，饱和压降 FS15R06VE3 1.55V 15A，600V@Tc=80℃，IGBT3，饱和压降 FS15R06VE3_B2 1.55V FS20R06VE3(no 20A，600V@Tc=80℃，IGBT3，饱和压降 Datasheet) 1.55V 20A，600V@Tc=80℃，IGBT3，饱和压降 FS20R06VE3_B2 1.55V 30A，600V@Tc=80℃，IGBT3，饱和压降 FS30R06VE3 1.55V 15A，600V@Tc=80℃，IGBT3，饱和压降 FS15R06XE3 1.55V BSM30GD60DLC FS400R06A1E3 FS800R06A2E3 ♦ 整流桥＋三相桥（PIM） 产品型号 BSM10GP60 BSM15GP60 基本参数 10A,600V 15A,600V 400A,600V,三相桥,HEV专用 800A,600V,三相桥,HEV专用
CR6224设计指导书V1.1
西安民展微一级代理商--同创微电子 手机 13418601901 QQ 409545144
西安民展微电子有限公司
摘要： 摘要：
本文主要介绍了 CR622X 的特征和详细的工作 原理，描述了一种采用 CR622X 的反激式隔离 AC-DC 开关电源的简单而高效的设计方法。
应用领域 应用领域： 领域：
集成、绿色、创新、超越
©西安民展微电子有限公司
CR622X 设计指导书
最小直流输入电压 VMIN
2 VMIN = 2 × VACMIN
1 2 × PO × − tC 2 × fL …………………………（2.2） − η × CIN
其中，fL 为输入交流电压频率（50Hz/60Hz） ； tC 为桥式整流大额导通时间，如无数据可供参考，则取 3ms； 所有单位分别为伏特、瓦特、赫兹、秒、法拉第。 最大直流输入电压 VMAX
图 1.4 FB 端电压对应系统工作状态
0.8V~1.1V 为系统在空载或轻载时工作在间歇模式下的 FB 端电压；1.1V~1.62V 为系统在中等或轻载 负载时频率调制模式下的 FB 端电压；1.62V~3.7V 为系统在重载下的 FB 端电压；3.7V~5.6V 为系统开环， 过功率保护，短路保护时 FB 端电压；FB 端的短路电流典型值为 1.55mA。 当 VFB 大于 3.7V 并持续 50ms 的时间， 关闭开关管， 状态被保持。 此时芯片 VDD 电压必须降低到 VDD_OFF 后，再启动才能恢复正常。当 VFB 小于 0.8V 时，仅关闭开关管以保护系统。 6.CS 输入端 CR622X 采用电流模式 PWM 控制技术，初级峰值电流通过电流检测电阻 Rsense 转化为电压反馈到 Sense 端。由于在开关管导通瞬间会有脉冲峰值电流，如果此时采样电流值，会导致错误的控制。内置的 前沿消隐 （LEB） 电路， 就是为了防止这种错误的控制。 在开关管导通后， 经过一段前沿消隐时间 （典型 300ns） 才去控制电流限制比较器，可以为系统节省一个外部的 RC 网络。 正常工作时，PWM 占空比由 Sense 端电压和 FB 端电压共同调整。 7.内置斜波补偿 内置斜波补偿电路增加电流检测电压的斜率，这可以改善系统闭环的稳定性，防止次谐波振荡，减小 输出纹波电压。 4
三极管型号参数大全
2N6083 2N6098 2N6099 2N6109 2N6124 2N6211 2N6213 2N6248 2N6284 2N6287 2N6292 2N6356 2N6422 2N6427 2N6476 2N6488 2N6491 2N6517 2N6520 2N6547 2N6556 2N6609 2N6660 2N6661 2N6675 2N6678 2N6716 2N6718 2N6725 2N6728 2N697 2N7002 2N914 2N918 2SA1006B 2SA1009 2SA1011 2SA1013 2SA1015 2SA1016 2SA1017 2SA1018 2SA1020 2SA1027 2SA1029 2SA1034 2SA1037
型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440 2N3441 2N3442 2N3495 2N3502 2N3553 2N3571
关键参数 GE-P 35V 0.15A 0.165W GE-N 25V 0.3A 0.15W 10MHz GE-P 30V 0.3A 0.15W 5MHz GE-P 30V 0.3A 0.15W B>60 SI-N 75V 1A 0.8W 60MHz SI-N 75V 1A 0.8W 70MHz SI-N 120V 0.5A 0.8W SI-N 120V 1A 1W <120MHz GE-P 60V 5A 12.5W SI-P 30V 50mA 0.15W 18MHz SI-P 15V 50mA 0.15W 10MHz SI-N 40V 0.8A 0.8W 250MHz SI-N 40V 0.8A 0.5W 300MHz 2xSI-N 100V 0.5A 0.6W >50 2xSI-N 100V 0.5A 0.6W >50 SI-N 120V 1A 0.8W 50MHz SI-N 40V 0.2A .36W 12/18ns SI-N 30V 40mA 0.2W >1GHz SI-P 12V 0.2A 1.2W 60/90ns SI-P 60V 0.6A 0.6W 45/100 SI-P 60V 0.6A 0.4W 45/100 SI-P 60V 0.6A 0.4W 45/100 SI-N 45V 0.03A >60Mz SI-N 25V 0.1A 0.2W 300MHz GE-P 40V 0.1A 0.15W 200MHz SI-N 140V 1A 0.8W 100MHz SI-N 60V 0.7A 5W 100MHz SI-N 90V 4A 25W 3MHz SI-N 100V 15A 115W 800kHz SI-N 100V 15A 115W 800kHz SI-N 100V 15A 115W 800kHz SI-P 50V 0.2A 0.36W SI-N 40V 0.5A 11.6W 500MHz SI-N 450V 1A 10W 15MHz SI-N 300V 1A 10W 15MHz SI-N 160V 3A 25W POWER SI-N 160V 10A 117W 0.8MHz SI-P 120V 0.1A 0.6W >150MHz SI-P 45V 0.6A 0.7W 200MHz SI-N 65V 0.35A 7W 500MHz SI-N 30V 0.05A 0.2W 1.4GHz