论文英译汉

论文英译汉
论文英译汉

论文

科技英语英译汉

学院:大数据与信息工程学院

专业名称:集成电路工程

姓名:

学号:

2014年12 月

一种在3D-IC TSV(硅通孔)中新的分段等效电路建模方法

摘要

本文提出了一种新的TSV技术中分段等效电路的建模方法,它是3D-IC的关键技术。首先提取出TSV的电气参数,接着将它用来完成单TSV和双TSV结构的等效电路。分段建模方法是通过将TSV结构分为三部分来实现的,即顶部,中部和底部的硅通孔结构。中间部分的电气参数是通过解析公式得到的,而顶部和底部的电气参数是通过更加精确的3D场解得到的。通过这种新方法得到的TSV的等效电路与一般方法相比更为准确。等效电路模型的S 参数的仿真结果与HFSS的仿真结果得到了很好的匹配,然而它的仿真时间却大为缩短,并且仿真结果表明,该模型可以准确反映出TSV的传输特性。

关键词:3d-ic;TSV;等效电路;分段建模方法

一、介绍

TSV(硅通孔)是三维集成电路为了实现芯片堆叠互联的解决方案来而发展起来的一种新技术。建立等效电路并且研究TSV的特性是非常重要的。TSV建模的探究将有助于分布参数、传输特性,以及TSV结构的其他电学特性的研究,从而为3D-IC的研究奠定基础。

TSV目前的研究主要集中在以下几个方面:一是TSV结构的建模与分析;二是TSV结构的耦合效应;三是TSV不同参数对TSV电特性的影响。文[ 1 ]基于TSV结构进行了详细的研究,并且描述了TSV结构的等效建模方法。在文[ 2 ]中,针对不同的TSV分布形式(圆锥和直立型),提出了计算寄生电阻和寄生电感的闭式表达式,该公式和数值计算方法的计算结果比较表明,该公式在低频时更准确,而在高频时,由于集肤效应引起的误差会增大。文献[3-4]重点研究了耦合效应,对TSVs间的互耦合和TSV上的噪声耦合都进行了分析。文[ 5 ]提出了TSV电容耦合效应的一种快速分析模型。文[ 6 ]研究了不同大小的排除区(KOZ)对TSV电气性能的影响。

本文主要研究了TSV的建模方法。建模中使用的TSV的电气参数是通过解析计算公式和3D场解得到的,然后参数用于完成单TSV结构和双TSV结构的等效电路。此外,在之前研究的基础上,提出了分段建模方法。分段建模方法是通过把TSV结构分成三部分实现的,即顶部,中部和底部的孔结构。通过解析公式得到中间部分的电气参数,同时通过3D场解(Ansoft Q3D Extractor)提取得到更加精确的顶部和底部的参数,最后再将三部分连接起来。该方法用于完成单TSV结构和双TSV结构的等效电路模型。通过这种新方法得到的TSV 的等效电路与以前的方法相比更为准确。分段建模过程比较简单,并且可以从等效电路模型直接得到TSV的电气结构。S参数的仿真结果与HFSS的仿真结果得到了很好的匹配,然而它的仿真时间却更短(小于一秒),并且仿真结果表明,该模型可以准确反映出TSV的传输特性。

二、 TSV的等效电路模型

A. 单TSV模型

使用HFSS建立TSV结构的3D模型,并且在1~20GHz范围内实现了模型的仿真分析。S 参数曲线是由仿真得到的,而仿真结果又被用于等效电路模型在ADS中的验证。模型如图1所示。模型中使用的参数如下所示:TSV的直径为10um,高度为100um,硅基片尺寸为100μm×100μm×100μm,二氧化硅薄膜的厚度为1um。TSV的材料是铜。

图1 单TSV结构

在等效电路模型中,TSV结构的RLC参数公式如文献[ 7 ]中所示。

式中,Rtsv,Ctsv和Ltsv分别是TSV的等效电阻,电容和电感;h,r,t和p分别是TSV的高度,半径,氧化层厚度和TSVs之间的间距。

等效电路模型中使用的硅衬底上的RC参数公式如下所示:

式中,Rsi和Csi分别是硅衬底的等效电阻和电容,a,b和h分别是硅衬底的长度,高度和宽度。

该TSV结构等效为TSV的电阻和电感,并且通过和二氧化硅绝缘层形成的电容耦合到硅衬底上。而硅衬底本身等效为电阻和电容。该等效电路模型是根据参数的计算值建立的,等效电路如图2所示。

图2 单TSV的等效电路

等效电路在1-20GHz范围内进行了仿真分析。通过仿真获得的S(2,1)参数曲线如图3所示。

图3 单TSV等效电路的S(2,1)参数曲线

B. 双TSV模型。

双TSVs结构的3D模型首先在HFSS中建模,模型的仿真分析也是在1-20GHz范围内进行的。该模型如图4所示。

图4 双TSV结构

硅衬底的尺寸为100μm×200um×100um,而建模中使用的其他参数与单TSV情况是相同的。

双TSVs是通过一根导线连接起来的,而导线本身在等效电路中等效为电阻和电感。等效结构的其他部分与单TSV结构是一样的。等效电路如图5所示。

图5 双TSV的等效电路

等效电路在1-20GHz范围内进行了仿真分析。通过仿真获得的S(2,1)参数曲线如图6所示。

图6 双TSV等效电路的S(2,1)参数曲线

数据显示,等效电路的仿真结果与HFSS的仿真结果得到了很好的匹配。然而,等效电路模型是一种简单的结构,它的仿真时间还不到1s,对于TSV结构值电气特性的快速分析来说,这已经是一个很好的结果了。

三、TSV的分段模型

解析公式对于复杂结构具有一定的局限性,并且不能准确反映出各参数值。于是我们提出了TSV分段建模方法,并且使用3D软件Q3D提取出了用于修正TSV模型的参数。TSV分段建模可以更准确地反映TSV的电气结构,并且可以更恰当的模拟出TSV结构。TSV建模的分段结构如图7所示。图中,整个TSV结构分成三部分,图中标注为第一部分为,第二部分和第三部分。第二部分占TSV结构的1 / 2,而第一部分和第三部分各占TSV结构的1 / 4。第一部分的电气参数仍然是由解析公式提取出来的,因为这部分的结构简单,形状没有变化,而第二部分和第三部分的参数是通过更加精确的3D场解得到的。由于这两部分的TSV结构

发生了变化,解析公式不够准确,因此用3D场解提取出等效参数,用以修正之前的模型。最后,等效电路的三个部分级联起来,形成新的TSV分段等效电路模型。

图7 TSV的分段结构

A.单TSV分段建模

分段建模方法首先用于单TSV结构的建模。等效电路如图8所示。

图8 单TSV结构的分段等效电路

等效电路在1-20GHz范围内进行了仿真分析。通过仿真获得的S(2,1)参数曲线如图9所示。

图9 单TSV分段等效电路的S(2,1)参数曲线

B.双TSVs的分段建模

双TSV的分段方法与单TSV的情况一致。等效电路如图10所示。

图10 双TSV结构的分段等效电路

等效电路也是在1-20GHz范围内进行了仿真分析。通过仿真获得的S(2,1)参数曲线如图11所示。

图11 双TSV分段等效电路的S(2,1)参数曲线

从以上两种建模方法的对比可以看出,当使用分段方法时,ADS的仿真结果与HFSS仿真结果可以得到更好的匹配。采用分段建模方法的等效电路模型更为准确,并且有更好的传输特性。以上所有比较表明,通过分段方法改进后,得到的参数更为准确,这样就修正了模型的不足,并进一步优化了TSV结构的建模。

四、结论

本文提出了TSV的一种新的分段等效电路建模方法,它是3D IC的关键技术。分段方法被用于完成单TSV结构和双TSV结构的等效电路。S参数的仿真结果与HFSS的仿真结果得到了很好的吻合,这表明了该建模方法的正确性。

此外,分段建模方法还具有以下优点:

1. 建模过程简单;

2. 求解速度快。所有等效电路模型在ADS中的运算时间小于1s;

3. 模型具有较高的精度。采用该方法的S参数仿真结果与HFSS的仿真结果相吻合。

参考文献

原文:

This paper proposed a novel segmented equivalent circuit modeling method of TSV, which is the key technology of 3D-IC. The electrical parameters of TSV are extracted firstly and then used to finish the equivalent circuit of single TSV and double TSVs structure. The segmented modeling method is realized by segmenting the TSV structure into three parts, namely the top, middle and bottom of the TSV structure. The electrical parameters of the middle part are obtained by analytical formulas, while the parameters of the top and bottom parts are obtained by 3D field solver more accurately. The equivalent circuit of TSV got by this novel method is more accurate compared with the general method. The simulation results of S parameter of the equivalent circuit model are matched well with the simulation results of HFSS while the simulation time is much shorter, and the simulation results show that the equivalent model can reflect the transmission characteristics of TSV accurately.

Keywords-3D-IC; TSV; equivalent circuit; segmented modeling method

I. INTRODUCTION

TSV (through silicon via) is a new technique for the solution of three-dimensional integrated circuit to realize the interconnection of chip stack. It is important to establish the equivalent circuit and study the characteristics of TSV. The research of TSV modeling will contribute to the study of parameters distribution,transmission properties, and other electrical effects of TSV structure, thus lays the foundation for the study of the 3D-IC.

The present study on TSV mainly focuses on the following aspects: one is the modeling and analysis of the structure of TSV; two is the coupling effect of TSV structure; three is the influence of the different parameters of TSV on the electrical characteristics of TSV. Paper [1] conducts a detailed study based on TSV structure, and the equivalent modeling method of TSV structure is described. In [2], closed form expression for calculating the parasitic resistance and inductance is proposed aimed at different distribution forms of TSV(conical and erect type), the comparison between the calculation results of the formula and numerical method shows that the proposed formula is more accurate in low frequency, while the error increases in high frequency due to the skin effect. Papers [3-4] focus on the study of coupling effect. The mutual coupling between TSVs and the noise coupling on TSV are both analyzed. Paper [5] proposes a rapid analysis model for capacitive coupling in TSV. Paper [6] studies the influence of different size of keep-out-zone (KOZ)on the electrical properties of TSV.

This paper mainly studies the modeling method of TSV. The electrical parameters of TSV that used in the modeling are obtained by analytical formulas and 3Dfield solver. The parameters are then used to finish the equivalent circuit of single TSV structure and two TSVs structure. Moreover, the segmented modeling method is proposed on the basis of the previous research. The segmented modeling

method is realized by segmenting the structure of TSV into three parts,namely the top, middle and bottom of the TSV structure. The electrical parameters of the middle part are still obtained through analytical formulas, while the parameters of the top and bottom parts are obtained by 3D field solvers-Ansoft Q3D Extractor-more accurately.The three parts are connected finally. This method is used to finish the equivalent circuit modeling of single TSV structure and two TSVs structure. The equivalent circuit of TSV got by this novel method is more accurate compared with the former method. The segmented modeling process is simple and the electrical structure of TSV is responded straightforwardly from the equivalent circuit model.The results of S parameter are matched with the simulation results of HFSS while the simulation time is much shorter with less than 1s, and the simulation results show that the equivalent model can reflect the transmission characteristics of TSV accurately.

II. EQUIVALENT CIRCUIT MODELING OF TSV

A.Modeling of Single TSV

The 3D model of TSV structure is modeled in HFSS, and the model simulation analysis is carried out in 1-20GHz. S parameter curves are obtained by simulation and the simulation results is used for the verification of the equivalent circuit model in ADS.The model is shown in Fig. 1. Here shows the parameters used in the modeling: the diameter of TSV is 10um, height is 100um, and the size of silicon medium is 100um ×100um ×100um, the thickness of silicon dioxide is 1um. The material of TSV is Copper.

The formulas for RLC parameters of TSV structure used in the equivalent circuit modeling are shown as follows [7]:

Where Rtsv, Ctsv and Ltsv are the equivalent resistor,capacitor and inductor of TSV, respectively, and h, r, t and p are height, radius of the TSV, oxide thickness and the pitch between TSVs, respectively.

The formulas for RC parameters of silicon substrate used in the equivalent circuit modeling are shown as follows:

Where Rsi and Csi are the equivalent resistance and capacitance of the silicon substrate, respectively, and a,b and h are the length, height and width of silicon substrate, respectively.

The TSV structure is equivalent to the resistance and inductance of TSV, and coupled to silicon substrate through the capacitance generated from the insulating layer-silicon dioxide. The silicon substrate is equivalent to the resistance and capacitance itself. The equivalent circuit is modeled according to the calculated value of the parameters. The equivalent circuit is shown in Fig. 2.

The equivalent circuit was analyzed by 1-20GHz simulation.The S(2,1)parameter curve achieved from the simulation is shown in Fig.3.

B. Modeling of Double TSVs

The 3D model of double TSVs structure is firstly modeled in HFSS, and the model simulation analysis is also carried out in 1-20GHz. The model is shown in

Fig. 4.

The size of the silicon substrate is 100um ×200um×100um, and the other parameters used in the modeling are the same with the situation of single TSV.

The double TSVs are connected through a transmission line, and the transmission line is modeled as the resistance and inductance of itself in the equivalent circuit.The others in the equivalent structure are the same with single TSV.The equivalent circuit is shown in Fig.5.

The equivalent circuit was analyzed by 1-20GHz simulation. The S (2, 1) parameter curve achieved from the simulation is shown in Fig. 6.

The figures show that the simulation results of the equivalent circuit are match with the simulation results of HFSS. However, the equivalent circuit modeling is of simple structure, and the simulation time is within 1s,which has a good value for the rapid analysis of electrical characteristics of the TSV structure.

III. SEGMENTED MODELING OF TSV

The analytic formulas have limitations for complex structures, and can not reflect the values of the parameters accurately. The segmented modeling method of TSV is proposed and the 3D software Q3Dis used to finish the extraction of parameters for modifying the TSV model. The segmented modeling of TSV can reflect the electrical structure of TSV more accurately and is more appropriate to simulate the TSV structure. The segmented structure for TSV modeling is shown in Fig. 7. As shown in the figure, the whole TSV structure is segmented into three parts, marked as Part1,Part2 and Part3 in the figure. The Part2 occupies 1/2 of the TSV structure, while Part1 and Part3 both occupy1/4 of the TSV structure. The electrical parameters of part 1 are still obtained by analytical formulas since this part has simple structure and has no change in shape, while the parameters of Part2 and Part3 are obtained by 3D field solvers more accurately. The analytic formulas are not accurate enough for these two parts of the TSV structure are changed, so the 3D field solvers is used for the extraction of the equivalent parameters to modify the previous model. Finally, the three parts of the equivalent circuit are cascaded, came into been the new segmented equivalent circuit model of TSV.

A. Segmented Modeling of Single TSV

The segmented modeling method is used for the modeling of single TSV structure firstly. The equivalent circuit is shown in Fig. 8.

The modeled equivalent circuit was analyzed by 1-20GHz simulation.The S(2,1)parameter curve achieved from the simulation is shown in Fig.9.

B. Segmented Modeling of Double TSVs

The segmented method of double TSVs is consistent with the situation of single TSV. The equivalent circuit is shown in Fig. 10.

The modeled equivalent circuit was also analyzed by 1-20GHz simulation.The S(2,1)parameter curve achieved from the simulation is shown in Fig.11.

It can be seen from the contrast of the above two kinds of modeling methods,that the simulation results of ADS are more matching with the simulation results of HFSS when use the segmented method.The equivalent circuit model using segmented modeling method is more accurate,and the model has better performance in transmission characteristics.All above comparison shows that the

parameters are more accurate when modified by the segmented method,which corrected the deficiencies of the model, and optimize the structure of TSV modeling further.

IV. CONCLUSION

This paper proposed a novel segmented equivalent circuit modeling method of TSV, which is the key technology of 3D IC. The segmented method is used to finish the equivalent circuit of single TSV structure and double TSVs structure. The simulation results of Sparameter are matched well with the simulation results of HFSS, which shows the accuracy of the modeling method.

In addition, the segmented modeling method also has the following advantages:

1.The modeling process is simple;

2.The solving speed is fast. The computing time of all the equivalent circuit models in ADS is

less than 1s;

3.The models are of high accuracy. The simulation results of S parameters by using

this method are well matched with the simulation results of HFSS.

浅谈商务英语的特点及英译汉翻译技巧-商务英语专业毕业论文

浅谈商务英语的特点及英译汉翻译技巧 目录 中文摘要 (1) 英文摘要 (2) 提纲 (3) 正文 (4) 参考文献 (8)

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On the Study of the Characteristic of Business English and Its E-C Translation Skills Abstract:As the world continues to deepen economic integration and expansion of international business having become increasingly frequent, the role of Business English is becoming increasingly significant, the paper business English as a practical tool for English language point of view.Its significant features, as well as the English translation of the corresponding Chinese translation skills to carry out a brief analysis, which helps business people to learn better English, better for business communication, international economic and trade success. Key words: business English; features; English-Chinese translation; translation skills

高级英语第二册段落翻译

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论文中英文翻译

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Translation Characteristics and Strategies of Letters of Credit in international Business By Submitted to School of Foreign Languages in Partial Fulfillment of the Requirements for the Term Paper For English-Chinese Translation at Under the Supervision of

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荡器耦合中。特别是,我们不难发现的稳态响应的耦合。根据两种模式的频率间隔,振荡器可分为两种不同形式的(合并振荡模式和分离振荡模式)振荡。稳态响应的振荡模式取决于系统参数,如谐因素,能源的速度,正常的接触载荷。 1、介绍 摩擦产生的振动将对各种应用系统产生严重的问题,如从事摩擦的刹车、离合器、机床等。由于摩擦而经常进行自我维持的不稳定的振动。这样的自激振荡在文献[1]中进行了广泛的研究 ,在那里的研究中使用了摩擦所致的振动的离散模型。 一个弹簧-块单自由度模型解释了粘滑振荡[2-5]的行为。在该模型中,不稳定摩擦振动导致了极限环的形成。[2]采用了指数和多项式函数,并使用摩擦速度曲线研究了导致极限环振荡的条件。类似的,粘滑振荡所提供的不连续摩擦模型控制方程,在设定静态和动态两个不同的摩擦机理[3]、[4]中,使用了不同的摩擦模型如平滑和交换的方法。平稳的摩擦曲线平滑方法取代连续系统,并允许一个解决一个单一的光滑微分方程。相比之下,交换方法评估了不同组方程的防滑和过渡模式。考虑到定性方式,Denny [5],使用了一个光滑摩擦曲线的平滑法很好地使系统行为从不连续阶段过渡到连续的滑动阶段。然而,单自由度只有在摩擦所致的适当振荡中不与其耦合。

英语专业翻译类论文参考文献

参考文献 一、翻译理论与实践相关书目 谢天振主编. 《当代国外翻译理论导读》. 天津:南开大学出版社,2008. Jeremy Munday. 《翻译学导论——理论与实践》Introducing Translation Studies---Theories and Applications. 李德凤等译. 北京:商务印书馆,2007. 包惠南、包昂. 《中国文化与汉英翻译》. 北京:外文出版社, 2004. 包惠南. 《文化语境与语言翻译》. 北京:中国对外翻译出版公司. 2001. 毕继万. 《世界文化史故事大系——英国卷》. 上海:上海外语教育出版社, 2003. 蔡基刚. 《英汉汉英段落翻译与实践》. 上海:复旦大学出版社, 2001. 蔡基刚. 《英汉写作对比研究》. 上海:复旦大学出版社, 2001. 蔡基刚. 《英语写作与抽象名词表达》. 上海:复旦大学出版社, 2003. 曹雪芹、高鄂. 《红楼梦》. 陈定安. 《英汉比较与翻译》. 北京:中国对外翻译出版公司, 1991. 陈福康. 《中国译学理论史稿》(修订本). 上海:上海外语教育出版社. 2000. 陈生保. 《英汉翻译津指》. 北京:中国对外翻译出版公司. 1998. 陈廷祐. 《英文汉译技巧》. 北京:外语教学与研究出版社. 2001. 陈望道. 《修辞学发凡》. 上海:上海教育出版社, 1979. 陈文伯. 《英汉翻译技法与练习》. 北京:世界知识出版社. 1998. 陈中绳、吴娟. 《英汉新词新义佳译》. 上海:上海翻译出版公司. 1990. 陈忠诚. 《词语翻译丛谈》. 北京:中国对外翻译出版公司, 1983. 程希岚. 《修辞学新编》. 吉林:吉林人民出版社, 1984. 程镇球. 《翻译论文集》. 北京:外语教学与研究出版社. 2002. 程镇球. 《翻译问题探索》. 北京:商务印书馆, 1980. 崔刚. 《广告英语》. 北京:北京理工大学出版社, 1993. 单其昌. 《汉英翻译技巧》. 北京:外语教学与研究出版社. 1990. 单其昌. 《汉英翻译讲评》. 北京:对外贸易教育出版社. 1989. 邓炎昌、刘润清. 《语言与文化——英汉语言文化对比》. 北京:外语教学与研究出版社, 1989. 丁树德. 《英汉汉英翻译教学综合指导》. 天津:天津大学出版社, 1996. 杜承南等,《中国当代翻译百论》. 重庆:重庆大学出版社, 1994. 《翻译通讯》编辑部. 《翻译研究论文集(1894-1948)》. 北京:外语教学与研究出版社. 1984. 《翻译通讯》编辑部. 《翻译研究论文集(1949-1983)》. 北京:外语教学与研究出版社. 1984. . 范勇主编. 《新编汉英翻译教程》. 天津:南开大学出版社. 2006. 方梦之、马秉义(编选). 《汉译英实践与技巧》. 北京:旅游教育出版社. 1996. 方梦之. 《英语汉译实践与技巧》. 天津:天津科技翻译出版公司. 1994. 方梦之主编. 《译学辞典》. 上海:上海外语教育出版社. 2004. 冯翠华. 《英语修辞大全》,北京:外语教学与研究出版社, 1995. 冯庆华. 《文体与翻译》. 上海:上海外语教育出版社, 2002. 冯庆华主编. 《文体翻译论》. 上海:上海外语教育出版社. 2002. 冯胜利. 《汉语的韵律、词法与句法》. 北京:北京大学出版社, 1997. 冯志杰. 《汉英科技翻译指要》. 北京:中国对外翻译出版公司. 1998. 耿占春. 《隐喻》. 北京:东方出版社, 1993.

科技论文汉译英

Underwater explosion shock wave propagation law of experiment research Abstract:Using PCB138 pressure sensor of dynamite underwater explosion shock wave pressure far field measurements, underwater explosion shock wave peak pressure and decay time constant.Calculated on the basis of explosion shock wave in explosive liquid medicine of similarity constants k and a .Preliminary mastered the experiment method of underwater explosion shock wave of underwater explosion of explosive shock wave propagation law had the further understanding. Keywords:underwater explosion;the shock wave;similar to the rate 1 The introduction Underwater explosion of explosive weapon design techniques is the water, the basis of studying the damage effect of problems.Underwater explosion can be roughly divided into three stages: explosive detonation, the generation of shock wave and propagation, the formation of air bubbles, and pulse.The strong action of shock waves characterize the dynamite explosion, at close range within the scope of damage to the target plays a decisive role.Research especially cylindrical propellant explosive underwater explosion shock wave propagation rule and performance parameters of underwater explosion have important practical significance, for the water weapon warhead design and provide important reference basis for the selection of explosives. Cole systematically summarizes the research achievements of Explosion in water since world war ii, published in 1948, the classic works in the field of the Underwater Explosion.Bocksteiner by two experiments of PBXW - 115 to assess the performance of cylindrical dynamite, gives the PBXW - 115 explosive underwater explosion performance parameters and similar constant.With the other underwater explosion of explosive performance parameters comparison, suggests PBXW - 115 has is better than other explosive underwater explosion properties of explosive, a superior blast kinetic energy weapons used in the water. This article according to the experimental measurement of CB - 01 explosive liquid medicine in the explosion shock wave pressure and the time history and have underwater explosion shock wave pressure peak and decay time constant, calculated by the shock wave peak pressure and time constant, CB - 01 of explosion shock wave in explosive liquid similarity constants k and a. 2 The basic theory of underwater explosion shock wave propagation Underwater explosion shock wave propagation process has four important parameters: p m , decay time constant θ, impulse I , peak pressure and energy flow density of E.By the measured pressure time curve, peak stress and attenuation time constant, has been further impulse and energy flow density. Decay time constant is defined as θ shock wave pressure from Pm peak pressure attenuation to p m /e of the time.E is a base of natural logarithms, e = 2.72.In θ time period, the change in pressure decay exponentially ()()θ/t m e p t p -= (1) I was defined as pressure with time integral, integral limit from 0 to 5θ

专八英译汉段落翻译完整版 中英文对照

My First Job When I reached the age of twelve I left the school for ever and got my first fulltime job, as a grocer’s boy. I spent my days carrying heavy loads, but I enjoyed it. It was only my capacity for hard work that saved me from early dismissal, for I could never stomach speaking to my “betters” with the deference my employer thought I should assume. But the limit was reached one Tuesday — my half holiday. On my way home on that day I used to carry a large basket of provisions to the home of my emplo yer’s sister-in-law. As her house was on my way home I never objected to this. On this particular Tuesday, however, just as we were putting the shutters up, a load of smoked hams was delivered at the shop. “Wait a minute,” said the boss, and he opened the load and took out a ham, which he started to bone and string up. I waited in growing impatience to get on my way, not for one minute but for a quite a considerable time. It was nearly half-past two when the boss finished. He then came to me with the ham, put it in the basket beside me, and instructed me to deliver it to a customer who had it on order. This meant going a long way out of my road home, so I looked up and said to the boss: “Do you know I finish at two on Tuesday?” I have never seen a man look m ore astonished than he did then. “What do you mean?” he gasped. I told him I meant that I would deliver the groceries as usual, but not the ham. He looked at me as if I were some unusual kind f insect and burst into a storm of abuse. But I stood firm. He gave me up as hopeless and tried new tactics. “Go out and get another boy,” he yelled at a shop-assistant. “Are you going to deliver them or not?” the boss turned to me and asked in a threatening tone. I repeated what I had said before. “Then, out of here,” he shouted. So I got out. This was the first time I had serious trouble with an employer.

经典英文段落翻译__英译汉15篇

1.意大利著名旅行家马可。波罗曾这样叙述他印象中的杭州:“这是世界上最美妙迷人的城市,它使人觉得自己社在天堂。”在中国,也流传着这样的话:“上有天堂,下有苏杭。”杭州的名气主要在于风景如画的西湖。西湖一年四季都美不胜收,宋代著名诗人苏东坡用“淡妆浓抹总相宜”的诗句来赞誉西湖。在杭州,您可以饱览西湖的秀色,也不妨漫步街头闹市,品尝一下杭州的名菜名点,还可购上几样名特土产。 The famous Italian traveler Marco Pole was so impressed by the beauty of Hangzhou that he described it as “the mist fascinating city in the world where one feels that one is in paradise.” In China, there has been a century-old popular saying praising the city: In Heaven there is Paradise; on Earth there are Suzhou and Hangz hou.” Hangzhou’s fame lies mainly in its picturesque West Lake. As it is beautiful all the year round, the West Lake was compared by Su Dongpo, a celebrated poet of the Song Dynasty, to a beauty “who is always charming in either light or heavy makeup.” In Hangzhou, you will not only find the lake a perfect delight to the eye but also find it a joy to stroll along the busy streets, taste famous Hangzhou dishes and buy some special local products. 2.在设备制造期间,雇主的代表有权对根据合同提供的全部工程设备的材料和工艺进行检查、研究和检验,同时检查其制造进度。这一切应在工作时间内于承包商的工厂里进行。如果工程设备正在其它第三方工厂制造,承包商应为卖方代表获得他能在该工厂进行此类检查、研究和检验的许可。此类检查、研究或检验不应解除承包商在合同中的任何义务。 The Employer’s representative shall be entitled during manufacture to inspect, examine and test the materials and workmanship and check the progress of manufacture of all Plants to be supplied under the Contract. This shall take place on the Contractor’s promises during working hours. If the plant is being manufactured on other premises, the Contractor shall obtain permission for the Employer’s representative to carry out such inspection, examination and testing on those premises. 3. 雇主或项目经理提交给承包商的雇主的图纸,技术规格以及其它资料仍应为雇主的财产。除非是为了合同的需要,未经雇主同意,承包商不得使用、复制这些材料或将之传递给第三方。 承包商应对承包商的图纸中的任何错误或遗漏负责,除非他们可归因与雇主或项目经理提供的不正确的雇主图纸或其它书面资料。项目经理对承包商的图纸的批准不应解除本款规定的承包商的任何责任。 The Employe r’s drawings, specification and other information submitted by the Employer or the Project Manager to the Contractor shall remain the property of the Employer. They shall not, without the consent of the Employer, be used, copied or communicated to a third party by the Contractor unless necessary for the purposes of the Contract. The Contractor shall be responsible for any errors or omissions in the Contractor’s Drawings unless they are due to incorrect Employer’s Drawings or other written information supplied by the Employer or the Project Manager. Approval by the Project Manager of the Contractor’s

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