SUP90N06-5M0P-E3中文资料

Vishay SiliconixSUP90N06-5m0PN-Channel 60-V (D-S) MOSFETFEATURES•TrenchFET ® Power MOSFET •175 °C Junction Temperature •100 % R g and UIS TestedAPPLICATIONS•Power Supply- Secondary Synchronous Rectification•Industrial•OR-ingPRODUCT SUMMARYV (BR)DSS (V)r DS(on) (Ω)I D (A)Q g (Typ)600.005 at V GS = 10 V90d105Notes:a. Duty cycle ≤ 1 %.b. See SOA curve for voltage derating.c. When Mounted on 1" square PCB (FR-4 material).d. Package limited. ABSOLUTE MAXIMUM RATINGS T C = 25°C, unless otherwise notedParameterSymbol Limit Unit Drain-Source Voltage V DS 60VGate-Source VoltageV GS± 20Continuous Drain Current (T J = 175 °C)T C = 25 °C I D 90d AT C = 70 °C90d Pulsed Drain Current I DM 240Avalanche Current I AS70Single Avalanche Energy a L = 0.1 mH E AS 245mJ Maximum Power DissipationaT C = 25 °C P D 300b W T A = 25 °C c3.75Operating Junction and Storage T emperature RangeT J , T stg- 55 to 175°CTHERMAL RESISTANCE RATINGSParameterSymbol Limit Unit Junction-to-Ambient (PCB Mount)c R thJA 40°C/WJunction-to-Case (Drain)R thJC0.5Vishay SiliconixSUP90N06-5m0PNotes:a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.b. Guaranteed by design, not subject to production testing.c. Independent of operating temperature.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.SPECIFICATIONS T J = 25°C, unless otherwise notedParameter Symbol Test Conditions Min Typ Max Unit StaticDrain-Source Breakdown Voltage V (BR)DSS V DS = 0 V , I D = 250 µA 60V Gate Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 2.54.5Gate-Body LeakageI GSS V DS = 0 V, V GS = ± 20 V ± 250nAZero Gate Voltage Drain Current I DSS V DS = 60 V , V GS = 0 V 1µA V DS = 60 V , V GS = 0 V , T J = 125 °C 50V DS = 60 V , V GS = 0 V , T J = 150 °C250On-State Drain Current aI D(on) V DS ≥ 10 V , V GS = 10 V 70A Drain-Source On-State Resistance a r DS(on) V GS = 10 V, I D = 20 A 0.00410.005ΩV GS = 10 V, I D = 20 A, T J = 125 °C0.00680.0087Forward T ransconductance a g fsV DS = 15 V , I D = 20 A60S Dynamic bInput Capacitance C iss V GS = 0 V , V DS = 30 V , f = 1 MHz6190pFOutput CapacitanceC oss 990Reverse Transfer Capacitance C rss 340Total Gate Charge c Q g V DS = 30 V , V GS = 10 V , ID = 85 A 105160nC Gate-Source Charge c Q gs 29Gate-Drain Charge c Q gd 28Gate Resistance R g f = 1 MHz1.42.8ΩTurn-On Delay Time c t d(on) V DD = 30 V, R L = 0.4 ΩI D ≅ 85 A, V GEN = 10 V , R g = 1 Ω2335ns Rise Time ct r 1525Turn-Off Delay Time c t d(off) 3655Fall Time ct f 815Source-Drain Diode Ratings and Characteristics (T C = 25°C)bContinuous Current I S 85A Pulsed Current I SM 240Forward Voltage a V SD I F = 30 A, V GS = 0 V0.84 1.5V Reverse Recovery Time t rr I F = 75 A, di/dt = 100 A/µs 61100ns Peak Reverse Recovery Current I RM(REC)3.04.5A Reverse Recovery ChargeQ rr91140µCOutput CharacteristicsTransfer CharacteristicsTransconductanceOn-resistance vs. Gate-to-Source VoltageCapacitanceVishay SiliconixSUP90N06-5m0PTYPICAL CHARACTERISTICS 25°C, unless otherwise notedGate ChargeSource-Drain Diode Forward VoltageThreshold VoltageOn-Resistance vs. Junction TemperatureMaximum Drain Current vs. Case TemperatureVishay SiliconixSUP90N06-5m0PTYPICAL CHARACTERISTICS 25°C, unless otherwise notedVishay Silicon ix main tain s worldwide man ufacturin g capability. Products may be man ufactured at on e of several qualified location s. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawin gs, part markin g, an d reliability data, see /ppg?74641.Single Pulse Avalanche Current Capability vs. TimeDisclaimer Legal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。