PB5350数据

−103 handbook, halfpage VCEsat (mV) −102
(1)
MGW169
handbook, halfpage
−1.4 VBEsat (V) −1.2 −1.0 − 0.8
MGW170
(1) (2)
(2) (3)
−10
− 0.6
(3)
− 0.4 − 0.2 −10 −1
−1 −10 −1
2003 May 13
5
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
Fig.4
Collector-emitter saturation voltage as a function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a function of collector current; typical values.
PBSS5350Z
MAX. −60 −50 −6 −3 −5 −1 1.35 2 +150 150 +150 V V V A A A W W
UNIT
°C °C °C
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 3. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated Handbook”. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS in free air; notes 1 and 3 in free air; notes 2 and 3 Notes 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm. 2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2. 3. For other mounting conditions see “Thermal considerations for SOT223 in the General Part of associated Handbook”. VALUE 92 62.5 UNIT K/W K/W
VCE = −2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C.
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Base-emitter voltage as a function of collector current; typical values.
2003 May 13
3
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER CONDITIONS − − − 200 200 100 − − − − − − 100 − VCB = −50 V; IE = 0; Tj = 150 °C emitter-base cut-off current DC current gain VEB = −5 V; IC = 0 VCE = −2 V; IC = −500 mA IC = −1 A; note 1 IC = −2 A; note 1 VCEsat collector-emitter saturation voltage IC = −500 mA; IB = −50 mA IC = −1 A; IB = −50 mA IC = −2 A; IB = −200 mA; note 1 RCEsat VBEsat VBEon fT Cc Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. equivalent on-resistance base-emitter saturation voltage transition frequency collector capacitance IC = −2 A; IB = −200 mA; note 1 IC = −2 A; IB = −200 mA; note 1 − − − − − − 120 − − − − MIN. − − −
Philips Semiconductors
Product specification
50 V low VCEsat PNP transistor
FEATURES • Low collector-emitter saturation voltage • High collector current capability: IC and ICM • High collector current gain (hFE) at high IC • Higher efficiency leading to less heat generation • Reduced PCB area requirements compared to DPAK. APPLICATIONS • Power management – DC/DC converters – Supply line switching – Battery charger – Linear voltage regulation (LDO). • Peripheral drivers – Driver in low supply voltage applications, e.g. lamps, LEDs – Inductive load driver, e.g. relays, buzzers, motors. DESCRIPTION PNP low VCEsat transistor in a SOT223 plastic package. NPN complement: PBSS4350Z.
4
2, 4 1 3
Top view
MAM288
MARKING TYPE NUMBER PBSS5350Z MARKING CODE PB5350 Fig.1
Simplified outline (SOT223) and symbol.
2003 May 13
2
Philips Semiconductors
(2)
− 0.4 200
(3)
(3)
0 −10 −1
−1
−10
−102
−103 −104 I C (mA)
0 −10 −1
−1
−10
−102
−103 −104 I C (mA)
VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
1 2 3
handbook, halfpage
PBSS5350Z
QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 4 base collector emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. −50 −3 −5 <150 UNIT V A A mΩ
Product specification
50 V low VCEsat PNP transistor
PBSS5350Z
handbook, halfpage
1000
MGW167
handbook, halfpage
− 1.2
MGW168
hFE 800
(1)
VBE (V) − 0.8
(1)
600
(2)
400
base-emitter turn-on voltage VCE = −2 V; IC = −1 A; note 1 IC = −100 mA; VCE = −5 V; f = 100 MHz VCB = −10 V; IE = Ie = 0; f = 1 MHz
2003 May 13
4
Philips Semiconductors
−1
−10
−102
−103 −104 I C (mA)
−1
−10