AZ23C2V7-V中文资料

AZ23-V-SeriesDocument Number 85759Rev. 1.5, 24-Mar-06Vishay Semiconductors1Small Signal Zener Diodes, DualFeatures•These diodes are also available in other case styles and configurations including:the dual diode common cathode configu-ration with type designation DZ23, the sin-gle diode SOT23 case with the type designation BZX84C, and the single diodeSOD123 case with the type designation BZT52C. •Dual Silicon Planar Zener Diodes, Common Anode•The Zener voltages are graded according to the international E 24 standard•The parameters are valid for both diodes in one case. ΔV Z and Δr zj of the two diodes in one case is ≤ 5 %•Lead (Pb)-free component•Component in accordance to RoH S 2002/95/EC and WEEE 2002/96/ECMechanical DataCase: SOT23 Plastic case Weight: approx. 8.8 mgPackaging Codes/Options:GS18 / 10 k per 13" reel, (8 mm tape), 10 k/box GS08 / 3 k per 7" reel, (8 mm tape), 15 k/boxAbsolute Maximum RatingsT amb = 25°C, unless otherwise specified1) Device on fiberglass substrate, see layout on page 6Thermal CharacteristicsT amb = 25°C, unless otherwise specified1)Device on fiberglass substrate, see layout on page 6ParameterT est condition Symbol Value Unit Power dissipationP tot3001)mWParameterTest condition Symbol Value Unit Thermal resistance junction to ambient air R thJA 4201)K/W Junction temperature T j 150°C Storage temperature rangeT stg- 65 to + 150°C 2Document Number 85759Rev. 1.5, 24-Mar-06AZ23-V-SeriesVishay Semiconductors Electrical Characteristics1) Tested with pulses tp = 5 msPartnumberMarking CodeZener Voltage Range 1)Dynamic Resistance TestCurrent T emperature Coefficientof Zener VoltageReverse Voltage V Z at I ZTr zj at I ZT = 5 mA, f = 1 kHz r zj at I ZT = 1 mA, f = 1 kHzI ZTαVZ at I ZTV R at I R = 100 nAVΩmA10-4/°CVminmax min max AZ23C2V7-V D1 2.5 2.975 (< 83)< 5005- 9- 4-AZ23C3V0-V D2 2.8 3.280 (< 95)< 5005- 9- 3-AZ23C3V3-V D3 3.1 3.580 (< 95)< 5005- 8- 3-AZ23C3V6-V D4 3.4 3.880 (< 95)< 5005- 8- 3-AZ23C3V9-v D5 3.7 4.180 (< 95)< 5005- 7- 3-AZ23C4V3-V D64 4.680 (< 95)< 5005- 6- 1-AZ23C4V7-V D7 4.4570 (< 78)< 5005- 52-AZ23C5V1-V D8 4.8 5.430 (< 60)< 4805- 34> 0.8AZ23C5V6-V D9 5.2610 (< 40)< 4005- 26> 1AZ23C6V2-V D10 5.8 6.6 4.8 (< 10)< 2005- 17> 2AZ23C6V8-V D11 6.47.2 4.5 (< 8)< 150527> 3AZ23C7V5-V D1277.9 4 (< 7)< 505- 37> 5AZ23C8V2-V D137.78.7 4.5 (< 7)< 50547> 6AZ23C9V1-V D148.59.6 4.8 (< 10)< 50558> 7AZ23C10-V D159.410.6 5.2 (< 15)< 70558> 7.5AZ23C11-V D1610.411.6 6 (< 20)< 70559> 8.5AZ23C12-V D1711.412.77 (< 20)< 90569> 9AZ23C13-V D1812.414.19 (< 25)< 110579> 10AZ23C15-V D1913.815.611 (< 30)< 110579> 11AZ23C16-V D2015.317.113 (< 40)< 170589.5> 12AZ23C18-V D2116.819.118 (< 50)< 170589.5> 14AZ23C20-V D2218.821.220 (< 50)< 2205810> 15AZ23C22-V D2320.823.325 (< 55)< 2205810> 17AZ23C24-V D2422.825.628 (< 80)< 2205810> 18AZ23C27-V D2525.128.930 (< 80)< 2505810> 20AZ23C30-V D2******* (< 80)< 2505810> 22.5AZ23C33-V D2******* (< 80)< 2505810> 25AZ23C36-V D2******* (< 90)< 2505810> 27AZ23C39-V D2******* (< 90)< 30051012> 29AZ23C43-V D3******* (< 100)< 70051012> 32AZ23C47-V D3******* (< 100)< 75051012> 35AZ23C51-VD32485470 (< 100)< 75051012> 38AZ23-V-SeriesDocument Number 85759Rev. 1.5, 24-Mar-06Vishay Semiconductors3Electrical Characteristics1) Tested with pulses tp = 5 msPartnumberMarking CodeZener Voltage Range 1)Dynamic Resistance TestCurrent T emperature Coefficientof Zener VoltageReverse Voltage V Z at I ZTr zj at I ZT = 5 mA, f = 1 kHz r zj at I ZT = 1 mA, f = 1 kHzI ZTαVZ at I ZTV R at I R = 100 nAVΩmA10-4/°CVminmax min max AZ23B2V7-V D1 2.65 2.7575 (< 83)< 5005- 9- 4-AZ23B3V0-V D2 2.94 3.0680 (< 95)< 5005- 9- 3-AZ23B3V3-V D3 3.23 3.3780 (< 95)< 5005- 8- 3-AZ23B3V6-V D4 3.53 3.6780 (< 95)< 5005- 8- 3-AZ23B3V9-V D5 3.82 3.9880 (< 95)< 5005- 7- 3-AZ23B4V3-V D6 4.21 4.3980 (< 95)< 5005- 6- 1-AZ23B4V7-V D7 4.61 4.7970 (< 78)< 5005- 52-AZ23B5V1-V D85 5.230 (< 60)< 4805- 34> 0.8AZ23B5V6-V D9 5.49 5.7110 (< 40)< 4005- 26> 1AZ23B6V2-V D10 6.08 6.32 4.8 (< 10)< 2005- 17> 2AZ23B6V8-V D11 6.66 6.94 4.5 (< 8)< 150527> 3AZ23B7V5-V D127.357.65 4 (< 7)< 505- 37> 5AZ23B8V2-V D138.048.36 4.5 (< 7)< 50547> 6AZ23B9V1-V D148.929.28 4.8 (< 10)< 50558> 7AZ23B10-V D159.810.2 5.2 (< 15)< 70558> 7.5AZ23B11-V D1610.811.2 6 (< 20)< 70559> 8.5AZ23B12-V D1711.812.27 (< 20)< 90569> 9AZ23B13-V D1812.713.39 (< 25)< 110579> 10AZ23B15-V D1914.715.311 (< 30)< 110579> 11AZ23B16-V D2015.716.313 (< 40)< 170580.5> 12AZ23B18-V D2117.618.418 (< 50)< 170580.5> 14AZ23B20-V D2219.620.420 (< 50)< 2205810> 15AZ23B22-V D2321.622.425 (< 55)< 2205810> 17AZ23B24-V D2423.524.528 (< 80)< 2205810> 18AZ23B27-V D2526.527.530 (< 80)< 2505810> 20AZ23B30-V D2629.430.635 (< 80)< 2505810> 22.5AZ23B33-V D2732.333.740 (< 80)< 2505810> 25AZ23B36-V D2835.336.740 (< 90)< 2505810> 27AZ23B39-V D2938.239.850 (< 90)< 30051012> 29AZ23B43-V D3042.143.960 (< 100)< 70051012> 32AZ23B47-V D3146.147.970 (< 100)< 75051012> 35AZ23B51-VD32505270 (< 100)< 75051012> 38 4Document Number 85759Rev. 1.5, 24-Mar-06AZ23-V-SeriesVishay Semiconductors Typical CharacteristicsT amb = 25°C, unless otherwise specifiedFigure 1. Forward characteristicsFigure 2. Admissible Power Dissipation vs. Ambient Temperature Figure 3. Dynamic Resistance vs. Zener Current18114mA 10101010101010I FV F0.20.40.60.81V18115m W 4001000300200P totT am b100200 °C50018120103754327543210Ω0.123452345110 mAr zjI Z102Figure 4. Thermal Differential Resistance vs. Zener VoltageFigure 5. Dynamic Resistance vs. Zener VoltageFigure 6. Temperature Dependence of Zener Voltage vs. ZenerVoltage18121103543254321021r zth543210Ω12345234510100 VVZ at I Z = 5 mAnegati v e positi v e ΔΔV Z T jr zth = R thA x V Z x1812210075432754321Ωr10Tj = 25 °C I Z = 5 mA12345234510100 VV Z18123Δ2520151050- 5m V /°C ΔV Z T j12345234510100 VV ZAZ23-V-SeriesDocument Number 85759Rev. 1.5, 24-Mar-06Vishay Semiconductors5Figure 7. Change of Zener Voltage vs. Junction TemperatureFigure 8. Temperature Dependence of Zener Voltage vs. ZenerVoltageFigure9. Change of Zener Voltage vs. Junction Temperature181240.80.70.60.50.40.30.20.10 - 1- 0.2V ZVT j20406080100120140 CΔ18125Δ100806040200m V /°C ΔV Z T j20408060100 VV Z1812697531- 1V V 86420010060T j204012080140 °CFigure 10. Change of Zener voltage from turn-on up to the point ofthermal equilibrium vs. Zener voltageFigure 11. Change of Zener voltage from turn-on up to the point ofthermal equilibrium vs. Zener voltageFigure12. Breakdown Characteristics181271.61.20.80.40- 0.4V V 1.410.60.2 - 0.212345234510100 VV Z at I Z = 5 mAV Z = r zth x I ZΔ1812854321V V 020********* VV Z18111V ZmA 50403020100lz 6Document Number 85759Rev. 1.5, 24-Mar-06AZ23-V-SeriesVishay SemiconductorsLayout for R thJA testThickness: Fiberglass 0.059 in. (1.5 mm)Copper leads 0.012 in. (0.3 mm)Figure13. Breakdown Characteristics 18112102030040 V V Z mA 302010lzFigure 14. Breakdown Characteristics18113mA 1086420lz1020304050607080900100 VV ZAZ23-V-SeriesDocument Number 85759Rev. 1.5, 24-Mar-06Vishay Semiconductors7Package Dimensions in mm (Inches) 8Document Number 85759Rev. 1.5, 24-Mar-06AZ23-V-SeriesVishay SemiconductorsOzone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendmentsrespectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyDocument Number: 91000Revision: 18-Jul-081DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。