FBI2B4S1中文资料
FBI
Page 9
Claric 使用规范说明 Starling
From:蝴蝶效应
screaming
逮捕剥皮恶魔 I见习特工
I will
褪蛹成蝶
胆识过人 For you
back
Page 10
使用规范说明
John Hoover(胡夫)
击毙亡命之徒
FBI 第一任局长
Page 20
使用规范说明
FBI既是法律的维护者，又是破坏者。美国民众 对它最不满意之处，就是它经常借反恐之名侵犯 公民的个人隐私，探员们总是草木皆兵，有一点 风吹草动就反应过度。 然而它在反恐怖主义，彻查犯罪行为，执法办法 方面时时刻刻发挥着作用，它的两面性，或许我 们能从ＦＢＩ第一届执行官胡夫的纪录片中， 看 出些制衡与分工。
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FBI - 主要功绩
1930s:
逮捕了一批臭 名昭著的绑架、 抢劫和杀人犯。 在打击三K党的 行动中联邦调 查局也扮演了 重要角色。
使用规范说明
1940s:
调查了针对美国 的间谍案二战期 间联邦调查局曾 抓获8名到美国执 行破坏任务的纳 粹间谍
1960s:
联邦调查局还针对 美国的有组织犯罪 进行了很多工作， 打击了很多犯罪组 织和集团，例如 Sam Giancana家 族和John Gotti家 族。
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罪行累累
在亚拉巴马的一个民权 组织举行聚会的教堂内 制造了爆炸案，导致了 多名年轻女孩的丧生
领导人被指控强奸并谋杀了 一位年轻的女教师''Madge Oberholtzer''，被害人多次被 斯蒂芬森殴打，以至于有人 听到她说自己“被''食人兽'' 撕咬过。
PT7C4337WE中文资料
Crystal: 32.768kHz
Source
External input
1
Oscillator
Oscillator enable/disable
Oscillator fail detect
2
Time
Time display
12-hour 24-hour
Century bit
3
Alarm interrupt
Real-time Clock Module (I2C Bus)
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Overview of Functions .................................................................................................................................................................. 5 Registers......................................................................................................................................................................................... 6
美国fbi
美国fbi
美国联邦调查局
美国的情报机构之一
美国联邦调查局，是世界著名的美国最重要的情报机构之一，隶属于美国司法部，英文全称Federal Bureau of Invetigation, 英文缩写FBI。
“FBI”不仅是美国联邦调查局的缩写，还代表
着该局坚持贯彻的信條——忠诚 (Fidelity)、勇敢 (Bravery) 和
正直(Integrity),象征联邦警察。
五大影响社会的方面享有最高优先权:反暴行，毒品/有组织犯罪，外国反间谍活动，暴力犯罪和白领阶层犯罪等方面享有最高优先权。
2017年8月1日，克里斯托弗雷(Christopher Wray)正式出任
美国联邦调查局(FBI)局长。
AT45DB021B-SI中文资料
1 Features•Single2.7V-3.6V Supply•Serial Peripheral Interface(SPI)Compatible•Page Program Operation–Single CycleReprogram(Erase and Program)–1024Pages(264Bytes/Page)Main Memory•Supports Page and Block Erase Operations•Two264-byte SRAM Data Buffers–Allows Receiving of Datawhile Reprogramming of Nonvolatile Memory•Continuous Read Capability through Entire Array–Ideal for Code Shadowing Applications•Low Power Dissipation–4mA Active Read Current Typical–2µA CMOS Standby Current Typical•20MHz Max Clock Frequency•Hardware Data Protection Feature•100%Compatible to AT45DB021and AT45DB021A• 5.0V-tolerant Inputs:SI,SCK,CS,RESET and WP Pins•Commercial and Industrial Temperature RangesDescriptionThe AT45DB021B is a2.7-volt only,serial interface Flash memory ideally suited fora wide variety of digital voice-,image-,program code-and data-storage applications.Its2,162,688bits of memory are organized as1024pages of264bytes each.In addi-tion to the main memory,the AT45DB021B also contains two SRAM data buffersof264bytes each.The buffers allow receiving of data while a page in the main mem-ory is being reprogrammed,as well as reading or writing a continuous data stream.Pin ConfigurationsCBGA Top Viewthrough PackageTSOP T op ViewT ype128-SOIC8-SOIC2AT45DB021B1937F –DFLSH –10/02EEPROM emulation (bit or byte alterability)is easily handled with a self-contained three step Read-Modify-Write operation.Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface,the DataFlash uses a SPI serial interface to sequentially access its data.DataFlash supports SPI mode 0and mode 3.The simple serial interface facilitates hardware layout,increases system reliability,minimizes switching noise,and reduces package size and active pin count.The device is optimized for use in many commercial and industrial applications where high density,low pin count,low voltage,and low power are essential.The device oper-ates at clock frequencies up to 20MHz with a typical active read current consumption of 4mA.To allow for simple in-system reprogrammability,the AT45DB021B does not require high input voltages for programming.The device operates from a single power supply,2.7V to 3.6V,for both the program and read operations.The AT45DB021B is enabled through the chip select pin (CS)and accessed via a three-wire interface consisting of the Serial Input (SI),Serial Output (SO),and the Serial Clock (SCK).All programming cycles are self-timed,and no separate erase cycle is required before programming.When the device is shipped from Atmel,the most significant page of the memory array may not be erased.In other words,the contents of the last page may not be filled with FFH.Block DiagramMemory ArrayTo provide optimal flexibility,the memory array of the AT45DB021B is divided into three levels of granularity comprised of sectors,blocks and pages.The Memory Architecture Diagram illustrates the breakdown of each level and details the number of pages per sector and block.All program operations to the DataFlash occur on a page-by-page basis;however,the optional erase operations can be performed at the block or page level.3AT45DB021B1937F –DFLSH –10/02Memory Architecture DiagramDevice OperationThe device operation is controlled by instructions from the host processor.The list of instructions and their associated opcodes are contained in Tables 1through 4(pages 10and 11).A valid instruction starts with the falling edge of CS followed by the appropriate 8-bit opcode and the desired buffer or main memory address location.While the CS pin is low,toggling the SCK pin controls the loading of the opcode and the desired buffer or main memory address location through the SI (serial input)pin.All instructions,addresses,and data are transferred with the most significant bit (MSB)first.Buffer addressing is referenced in the datasheet using the terminology BFA8-BFA0to denote the nine address bits required to designate a byte address within a buffer.Main memory addressing is referenced using the terminology PA9-PA0and BA8-BA0where PA9-PA0denotes the 10address bits required to designate a page address and BA8-BA0denotes the nine address bits required to designate a byte address within the page.Read CommandsBy specifying the appropriate opcode,data can be read from the main memory or from either one of the two data buffers.The DataFlash supports two categories of read modes in relation to the SCK signal.The differences between the modes are in respect to the inactive state of the SCK signal as well as which clock cycle data will begin to be output.The two categories,which are comprised of four modes total,are defined as Inactive Clock Polarity Low or Inactive Clock Polarity High and SPI Mode 0or SPI Mode 3.A separate opcode (refer to Table 1on page 10for a complete list)is used to select which category will be used for reading.Please refer to the “Detailed Bit-level Read Timing ”diagrams in this datasheet for details on the clock cycle sequences for each mode.CONTINUOUS ARRAY READ:By supplying an initial starting address for the main memory array,the Continuous Array Read command can be utilized to sequentially read a continuous stream of data from the device by simply providing a clock signal;no additional addressing information or control signals need to be provided.The DataFlash incorporates an internal address counter that will automatically increment on every clock4AT45DB021B1937F –DFLSH –10/02cycle,allowing one continuous read operation without the need of additional address sequences.To perform a continuous read,an opcode of 68H or E8H must be clocked into the device followed by 24address bits and 32don ’t care bits.The first five bits of the 24-bit address sequence are reserved for upward and downward compatibility to larger and smaller density devices (see Notes under “Command Sequence for Read/Write Operations ”diagram).The next 10address bits (PA9-PA0)specify which page of the main memory array to read,and the last nine bits (BA8-BA0)of the 24-bit address sequence specify the starting byte address within the page.The 32don ’t care bits that follow the 24address bits are needed to initialize the read operation.Following the 32don ’t care bits,additional clock pulses on the SCK pin will result in serial data being output on the SO (serial output)pin.The CS pin must remain low during the loading of the opcode,the address bits,the don ’t care bits,and the reading of data.When the end of a page in main memory is reached during a Continuous Array Read,the device will continue reading at the beginning of the next page with no delays incurred during the page boundary crossover (the crossover from the end of one page to the beginning of the next page).When the last bit in the main memory array has been read,the device will continue reading back at the begin-ning of the first page of memory.As with crossing over page boundaries,no delays will be incurred when wrapping around from the end of the array to the beginning of the array.A low-to-high transition on the CS pin will terminate the read operation and tri-state the SO pin.The maximum SCK frequency allowable for the Continuous Array Read is defined by the f CAR specification.The Continuous Array Read bypasses both data buff-ers and leaves the contents of the buffers unchanged.MAIN MEMORY PAGE READ:A Main Memory Page Read allows the user to read data directly from any one of the 1024pages in the main memory,bypassing both of the data buffers and leaving the contents of the buffers unchanged.To start a page read,an opcode of 52H or D2H must be clocked into the device followed by 24address bits and 32don ’t care bits.The first five bits of the 24-bit address sequence are reserved bits,the next 10address bits (PA9-PA0)specify the page address,and the next nine address bits (BA8-BA0)specify the starting byte address within the page.The 32don ’t care bits which follow the 24address bits are sent to initialize the read operation.Following the 32don ’t care bits,additional pulses on SCK result in serial data being output on the SO (serial output)pin.The CS pin must remain low during the loading of the opcode,the address bits,the don ’t care bits and the reading of data.When the end of a page in main memory is reached during a Main Memory Page Read,the device will continue reading at the beginning of the same page.A low-to-high transition on the CS pin will terminate the read operation and tri-state the SO pin.BUFFER READ:Data can be read from either one of the two buffers,using different opcodes to specify which buffer to read from.An opcode of 54H or D4H is used to read data from buffer 1,and an opcode of 56H or D6H is used to read data from buffer 2.To perform a Buffer Read,the eight bits of the opcode must be followed by 15don ’t care bits,nine address bits,and eight don ’t care bits.Since the buffer size is 264-bytes,nine address bits (BFA8-BFA0)are required to specify the first byte of data to be read from the buffer.The CS pin must remain low during the loading of the opcode,the address bits,the don ’t care bits and the reading of data.When the end of a buffer is reached,the device will continue reading back at the beginning of the buffer.A low-to-high transition on the CS pin will terminate the read operation and tri-state the SO pin.5AT45DB021B1937F –DFLSH –10/02STATUS REGISTER READ:The status register can be used to determine the device ’s ready/busy status,the result of a Main Memory Page to Buffer Compare operation,or the device density.To read the status register,an opcode of 57H or D7H must be loaded into the device.After the last bit of the opcode is shifted in,the eight bits of the status register,starting with the MSB (bit 7),will be shifted out on the SO pin during the next eight clock cycles.The five most-significant bits of the status register will contain device information,while the remaining three least-significant bits are reserved for future use and will have undefined values.After bit 0of the status register has been shifted out,the sequence will repeat itself (as long as CS remains low and SCK is being tog-gled)starting again with bit 7.The data in the status register is constantly updated,so each repeating sequence will output new data.Ready/Busy status is indicated using bit 7of the status register.If bit 7is a 1,then the device is not busy and is ready to accept the next command.If bit 7is a 0,then the device is in a busy state.The user can continuously poll bit 7of the status register by stopping SCK at a low level once bit 7has been output.The status of bit 7will continue to be output on the SO pin,and once the device is no longer busy,the state of SO will change from 0to 1.There are eight operations that can cause the device to be in a busy state:Main Memory Page to Buffer Transfer,Main Memory Page to Buffer Compare,Buffer to Main Memory Page Program with Built-in Erase,Buffer to Main Memory Page Program without Built-in Erase,Page Erase,Block Erase,Main Memory Page Program,and Auto Page Rewrite.The result of the most recent Main Memory Page to Buffer Compare operation is indi-cated using bit 6of the status register.If bit 6is a 0,then the data in the main memory page matches the data in the buffer.If bit 6is a 1,then at least one bit of the data in the main memory page does not match the data in the buffer.The device density is indicated using bits 5,4,3and 2of the status register.For the AT45DB021B,the four bits are 0,1,0and 1.The decimal value of these four binary bits does not equate to the device density;the four bits represent a combinational code relating to differing densities of Serial DataFlash devices,allowing a total of sixteen dif-ferent density configurations.Program and Erase CommandsBUFFER WRITE:Data can be shifted in from the SI pin into either buffer 1or buffer 2.To load data into either buffer,an 8-bit opcode,84H for buffer 1or 87H for buffer 2,must be followed by 15don't care bits and nine address bits (BFA8-BFA0).The nine address bits specify the first byte in the buffer to be written.The data is entered following the address bits.If the end of the data buffer is reached,the device will wrap around back to the beginning of the buffer.Data will continue to be loaded into the buffer until a low-to-high transition is detected on the CS pin.BUFFER TO MAIN MEMORY PAGE PROGRAM WITH BUILT -IN ERASE:Data written into either buffer 1or buffer 2can be programmed into the main memory.To start the operation,an 8-bit opcode (83H for buffer 1or 86H for buffer 2)must be followed by the five reserved bits,10address bits (PA9-PA0)that specify the page in the main memory to be written,and nine additional don ’t care bits.When a low-to-high transition occurs on the CS pin,the part will first erase the selected page in main memory to all 1s and then program the data stored in the buffer into the specified page in the main memory.Both the erase and the programming of the page are internally self-timed and should takeStatus Register Format6AT45DB021B1937F –DFLSH –10/02place in a maximum time of t EP .During this time,the status register will indicate that the part is busy.BUFFER TO MAIN MEMORY PAGE PROGRAM WITHOUT BUILT-IN ERASE:A previ-ously erased page within main memory can be programmed with the contents of either buffer 1or buffer 2.To start the operation,an 8-bit opcode (88H for buffer 1or 89H for buffer 2)must be followed by the five reserved bits,10address bits (PA9-PA0)that specify the page in the main memory to be written,and nine additional don ’t care bits.When a low-to-high transition occurs on the CS pin,the part will program the data stored in the buffer into the specified page in the main memory.It is necessary that the page in main memory that is being programmed has been previously erased.The programming of the page is internally self-timed and should take place in a maximum time of t P .Dur-ing this time,the status register will indicate that the part is busy.Successive page programming operations without doing a page erase are not recom-mended.In other words,changing bytes within a page from a “1”to a “0”during multiple page programming operations without erasing that page is not recommended.PAGE ERASE:The optional Page Erase command can be used to individually erase any page in the main memory array allowing the Buffer to Main Memory Page Program without Built-in Erase command to be utilized at a later time.To perform a Page Erase,an opcode of 81H must be loaded into the device,followed by five reserved bits,ten address bits (PA9-PA0),and nine don ’t care bits.The ten address bits are used to spec-ify which page of the memory array is to be erased.When a low-to-high transition occurs on the CS pin,the part will erase the selected page to 1s.The erase operation is inter-nally self-timed and should take place in a maximum time of t PE .During this time,the status register will indicate that the part is busy.BLOCK ERASE:A block of eight pages can be erased at one time allowing the Buffer to Main Memory Page Program without Built-in Erase command to be utilized to reduce programming times when writing large amounts of data to the device.To perform a Block Erase,an opcode of 50H must be loaded into the device,followed by five reserved bits,seven address bits (PA9-PA3),and 12don ’t care bits.The seven address bits are used to specify which block of eight pages is to be erased.When a low-to-high transition occurs on the CS pin,the part will erase the selected block of eight pages to 1s.The erase operation is internally self-timed and should take place in a maximum time of t BE .During this time,the status register will indicate that the part is busy.Block Erase AddressingPA9PA8PA7PA6PA5PA4PA3PA2PA1PA0Block 0000000X X X 00000001X X X 10000010X X X 20000011X X X 3•••••••••••••••••••••••••••••••••1111100X X X 1241111101X X X 1251111110X X X 1261111111XXX1277AT45DB021B1937F –DFLSH –10/02MAIN MEMORY PAGE PROGRAM THROUGH BUFFER:This operation is a combina-tion of the Buffer Write and Buffer to Main Memory Page Program with Built-in Erase operations.Data is first shifted into buffer 1or buffer 2from the SI pin and then pro-grammed into a specified page in the main memory.To initiate the operation,an 8-bit opcode (82H for buffer 1or 85H for buffer 2)must be followed by the five reserved bits and 20address bits.The 10most-significant address bits (PA9-PA0)select the page in the main memory where data is to be written,and the next nine address bits (BFA8-BFA0)select the first byte in the buffer to be written.After all address bits are shifted in,the part will take data from the SI pin and store it in one of the data buffers.If the end of the buffer is reached,the device will wrap around back to the beginning of the buffer.When there is a low-to-high transition on the CS pin,the part will first erase the selected page in main memory to all 1s and then program the data stored in the buffer into the specified page in the main memory.Both the erase and the programming of the page are internally self-timed and should take place in a maximum of time t EP .During this time,the status register will indicate that the part is busy.Additional CommandsMAIN MEMORY PAGE TO BUFFER TRANSFER:A page of data can be transferred from the main memory to either buffer 1or buffer 2.To start the operation,an 8-bit opcode,53H for buffer 1and 55H for buffer 2,must be followed by the five reserved bits,10address bits (PA9-PA0)which specify the page in main memory that is to be trans-ferred,and nine don ’t care bits.The CS pin must be low while toggling the SCK pin to load the opcode,the address bits,and the don ’t care bits from the SI pin.The transfer of the page of data from the main memory to the buffer will begin when the CS pin transi-tions from a low to a high state.During the transfer of a page of data (t XFR ),the status register can be read to determine whether the transfer has been completed or not.MAIN MEMORY PAGE TO BUFFER COMPARE:A page of data in main memory can be compared to the data in buffer 1or buffer 2.To initiate the operation,an 8-bit opcode (60H for buffer 1and 61H for buffer 2)must be followed by 24address bits consisting of the five reserved bits,10address bits (PA9-PA0)which specify the page in the main memory that is to be compared to the buffer,and nine don ’t care bits.The CS pin must be low while toggling the SCK pin to load the opcode,the address bits and the don ’t care bits from the SI pin.On the low-to-high transition of the CS pin,the 264bytes in the selected main memory page will be compared with the 264bytes in buffer 1or buffer 2.During this time (t XFR ),the status register will indicate that the part is busy.On comple-tion of the compare operation,bit 6of the status register is updated with the result of the compare.AUTO PAGE REWRITE:This mode is needed only if multiple bytes within a page or multiple pages of data are modified in a random fashion.This mode is a combination of two operations:Main Memory Page to Buffer Transfer and Buffer to Main Memory Page Program with Built-in Erase.A page of data is first transferred from the main memory to buffer 1or buffer 2,and then the same data (from buffer 1or buffer 2)is programmed back into its original page of main memory.To start the rewrite operation,an 8-bit opcode (58H for buffer 1or 59H for buffer 2)must be followed by the five reserved bits,10address bits (PA9-PA0)that specify the page in main memory to be rewritten,and nine additional don ’t care bits.When a low-to-high transition occurs on the CS pin,the part will first transfer data from the page in main memory to a buffer and then program the data from the buffer back into same page of main memory.The operation is inter-nally self-timed and should take place in a maximum time of t EP .During this time,the status register will indicate that the part is busy.8AT45DB021B1937F –DFLSH –10/02If a sector is programmed or reprogrammed sequentially page-by-page,then the pro-gramming algorithm shown in Figure 1on page 26is recommended.Otherwise,if multiple bytes in a page or several pages are programmed randomly in a sector,then the programming algorithm shown in Figure 2on page 27is recommended.Each page within a sector must be updated/rewritten at least once within every 10,000cumulative page erase/program operations in that sector.Operation Mode SummaryThe modes described can be separated into two groups –modes which make use of the Flash memory array (Group A)and modes which do not make use of the Flash memory array (Group B).Group A modes consist of:1.Main Memory Page Read2.Main Memory Page to Buffer 1(or 2)Transfer3.Main Memory Page to Buffer 1(or 2)Compare4.Buffer 1(or 2)to Main Memory Page Program with Built-in Erase5.Buffer 1(or 2)to Main Memory Page Program without Built-in Erase6.Page Erase7.Block Erase8.Main Memory Page Program through Buffer 9.Auto Page Rewrite Group B modes consist of:1.Buffer 1(or 2)Read 2.Buffer 1(or 2)Write 3.Status Register ReadIf a Group A mode is in progress (not fully completed),then another mode in Group A should not be started.However,during this time in which a Group A mode is in progress,modes in Group B can be started.This gives the Serial DataFlash the ability to virtually accommodate a continuous data stream.While data is being programmed into main memory from buffer 1,data can be loaded into buffer 2(or vice versa).See application note AN-4(“Using Atmel ’s Serial DataFlash ”)for more details.Pin DescriptionsSERIAL INPUT (SI):The SI pin is an input-only pin and is used to shift data into the device.The SI pin is used for all data input,including opcodes and address sequences.SERIAL OUTPUT (SO):The SO pin is an output-only pin and is used to shift data out from the device.SERIAL CLOCK (SCK):The SCK pin is an input-only pin and is used to control the flow of data to and from the DataFlash.Data is always clocked into the device on the rising edge of SCK and clocked out of the device on the falling edge of SCK.CHIP SELECT (CS):The DataFlash is selected when the CS pin is low.When the device is not selected,data will not be accepted on the SI pin,and the SO pin will remain in a high-impedance state.A high-to-low transition on the CS pin is required to start an operation,and a low-to-high transition on the CS pin is required to end an operation.9AT45DB021B1937F –DFLSH –10/02WRITE PROTECT:If the WP pin is held low,the first 256pages of the main memory cannot be reprogrammed.The only way to reprogram the first 256pages is to first drive the protect pin high and then use the program commands previously mentioned.The WP pin is internally pulled high;therefore,connection of the WP pin is not necessary if this pin and feature will not be utilized.However,it is recommended that the WP pin be driven high externally whenever possible.RESET:A low state on the reset pin (RESET)will terminate the operation in progress and reset the internal state machine to an idle state.The device will remain in the reset condition as long as a low level is present on the RESET pin.Normal operation can resume once the RESET pin is brought back to a high level.The device incorporates an internal power-on reset circuit,so there are no restrictions on the RESET pin during power-on sequences.The RESET pin is also internally pulled high;therefore,connection of the RESET pin is not necessary if this pin and feature will not be utilized.However,it is recommended that the RESET pin be driven high exter-nally whenever possible.READY/BUSY:This open-drain output pin will be driven low when the device is busy in an internally self-timed operation.This pin,which is normally in a high state (through a 1k Ωexternal pull-up resistor),will be pulled low during programming operations,com-pare operations,and during page-to-buffer transfers.The busy status indicates that the Flash memory array and one of the buffers cannot be accessed;read and write operations to the other buffer can still be performed.Power-on/Reset StateWhen power is first applied to the device,or when recovering from a reset condition,the device will default to SPI Mode 3.In addition,the SO pin will be in a high-impedance state,and a high-to-low transition on the pin will be required to start a valid instruc-tion.The SPI mode will be automatically selected on every falling edge of by sampling the inactive clock state.10AT45DB021B1937F –DFLSH –10/02Note:In T ables 2and 3,an SCK mode designation of “Any ”denotes any one of the four modes of operation (Inactive Clock Polarity Low,Inactive Clock Polarity High,SPI Mode 0,or SPI Mode 3).Table 3.Additional Commands11AT45DB021B1937F –DFLSH –10/02P =Page Address BitB =Byte/Buffer Address Bit x =Don ’t Care12AT45DB021B1937F –DFLSH –10/02Note:1.After power is applied and V CC is at the minimum specified datasheet value,the system should wait 20ms before anoperational mode is started.Note:1.I cc1during a buffer read is 20mA maximum.Absolute Maximum Ratings*T emperature under Bias ................................-55°C to +125°C *NOTICE:Stresses beyond those listed under “Absolute Maximum Ratings ”may cause permanent dam-age to the device.This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied.Exposure to absolute maximum rating conditions for extended periods may affect device reliability.Storage T emperature.....................................-65°C to +150°C All Input Voltages (including NC Pins)with Respect to Ground...................................-0.6V to +6.25V All Output Voltageswith Respect to Ground.............................-0.6V to V CC +0.6VDC and AC Operating RangeDC Characteristics13AT45DB021B1937F –DFLSH –10/02AC Characteristics14AT45DB021B1937F –DFLSH –10/02Input Test Waveforms and Measurement Levelst R ,t F <3ns (10%toOutput Test LoadACWaveformsTwo different timing diagrams are shown below.Waveform 1shows the SCK signal being low when CS makes a high-to-low transition,and Waveform 2shows the SCK sig-nal being high when CS makes a high-to-low transition.Both waveforms show valid timing diagrams.The setup and hold times for the SI signal are referenced to the low-to-high transition on the SCK signal.Waveform 1shows timing that is also compatible with SPI Mode 0,and Waveform 2shows timing that is compatible with SPI Mode 3.Waveform 1–Inactive ClockPolarity Low and SPI Mode 0Waveform 2–Inactive Clock Polarity High and SPI Mode 315AT45DB021B1937F –DFLSH –10/02Reset Timing (Inactive Clock Polarity Low Shown)Note:The signal should be in the high state before the signal is deasserted.Command Sequence for Read/Write Operations (except Status Register Read)Notes:1.“r ”designates bits reserved for larger densities.2.It is recommended that “r ”be a logical “0”for densities of 2M bits or smaller.3.For densities larger than 2M bits,the “r ”bits become the most significant Page Address bit for the appropriate density.16AT45DB021B1937F –DFLSH –10/02Write OperationsThe following block diagram and waveforms illustrate the various write sequences available.Main Memory Page Program through BuffersBuffer WriteBuffer to Main Memory Page Program (Data from Buffer Programmed into Flash Page)。
FBI反情报手册第一章部分
他们认为他们可以很容易的摆脱它。具有讽刺意味的是,即使他们确实是聪明的,它不会帮助他们。无论多么聪明或有经验的间谍,他或她不能防止美国内部的消息人士,外国情报业务人员使他她暴露。
美国政囘府的间谍心理学观点
美国政囘府已经做出了相当大的投资来研究
间谍活动行为与相关的危险。在一个机构项目里,一组FBI探员和政囘府的心理学家和精神病学家采访了许多那些已被逮捕,并被指控从事间谍活动的人。采访专注于间谍的动机,他们知道的安全政策和程序和手段,他们所犯下的罪行。这个项目试图理解间谍的行为、动机、性格、和心态。我们的目标是收集行为的信息,可以用于安全和提高反间谍人员在早期识别和处理背叛者的能力。
常规反情报过去的20年中美国逮捕、清除 的间谍或未遂的间谍,26%被逮捕是在他们可以做任何损害之前,47%的被抓是在他们背叛的第一年 。这并不令人惊讶,因为反情报知道这么多的外国情报官员活跃在美国。它知道他们工作的地方,在那里他们的生活,在那里他们一起出去,以及它们是如何展示他们的技能。任何潜在的间谍，不知道反间谍系统的工作原理是容易被反间谍网络抓到的。
介绍：
间谍活动是一项高风险的犯罪行为。那个叛徒必须担心被捕和
他或她的生命安全,调查上的法律限制不适用于间谍活动。
有四条主要途径,间谍被检测到:
由美国内部的消息人士,外国情报业务。
常规反情报监视。
从朋友或配偶提示。
自己的错误。
美国内部的消息人士,外国情报业务人员:美国对被捕的间谍进行一安全调查,大约一半时候是
该项目产生了大量的数据和许多意见,已经纳入安全政策、培训,和出版物。
FBI术语介绍
,是official cover的缩写，和diplomatic cover（外交掩护）实际上是一个意思。
有了外交掩护，情报人员便处于外交特权与豁免的庇护之下，等于有了一个金制的护身符。
，即Non Offical Cover，无外交掩护。
电影《碟中谍》第一部是围绕着一张磁盘中的NOC list展开的，这里的NOC就是Non-official Cover的缩写，指的是没有外交身份掩护的情报人员，也就是间谍术语中常说的illegal。
由于没有外交身份的掩护，此类情报人员一旦被敌国反间谍机关抓获，很可能被送进监狱，甚至处死。
当然，还有别的可能性，比如由本国政府用落网的外国间谍进行交换（swap），或者通过外交协商，由本国在其它方面作出让步，或给对方以实惠，以换回被捕的间谍，但这些就属于外交工作的范畴了。
驻外记者、贸易代表和留学生等都是情报人员们常用的非官方掩护身份。
immunity，即外交特权与豁免，一般简称为外交豁免权，是情报人员的护身符，因为有了外交豁免权便不受驻在国反间谍机关和警察的逮捕。
就算被对方抓住了真凭实据，也顶多被对方宣布为不受欢迎的人而被召回国内。
non grata，即不受欢迎的人，来自拉丁语，一旦被宣布为不受欢迎的人，情报人员便会被驱逐。
当然，被宣布为不受欢迎的人的也不仅限于从事间谍活动的情报人员，也包含涉及刑事犯罪的外交人员等。
，即情报站，前苏联克格勃则习惯称之为Residentura。
一般设在本国驻某国使馆内，因为情报站长（Station Chief）的地位相当重要，不能冒险让他当NOC,否则一旦被捕后果不堪设想。
因此，情报站长绝大多数都是以外交身份为掩护。
但是，以外交官的身份为掩护固然安全，但也有弊端，那就是被监控的程度要大得多了，因此与情报员的接头会变得异常困难。
这样一来，设在使馆里的情报站里的特工主要是管理情报网，具体的情报工作在很大程度上要依赖使馆外面的NOC们。
一般来讲，设在使馆里的情报站的站长应该是一位外交职衔较高的官员，这样便于其接触驻在国高层人士并从中发展情报员。
7b-w4e.chs
00:00:02,680 --> 00:00:03,956
好吧
2
00:00:04,088 --> 00:00:05,331
我向你解释
3
00:00:05,465 --> 00:00:07,407
藉此证明我特别信任你
4
00:00:07,544 --> 00:00:10,162
86
00:08:56,743 --> 00:08:58,303
绝不能提起调查局
87
00:08:58,438 --> 00:09:00,380
我们没理由来这里
88
00:09:00,519 --> 00:09:02,690
你听我说好吗？听我说…
89
00:09:02,823 --> 00:09:03,771
写当代犯罪的研究报告
27
00:01:22,522 --> 00:01:24,660
至少你不用再在警局等
28
00:01:24,795 --> 00:01:26,388
去剪个头发吧
29
00:01:27,355 --> 00:01:28,270
你怎么知道的？
30
00:01:28,411 --> 00:01:29,752
别碰我！
90
00:09:03,911 --> 00:09:05,754
好吧，我道歉
91
00:09:05,895 --> 00:09:08,316
但你听我一句话
92
00:09:08,455 --> 00:09:11,651
特工装备：美国中情局历史上的著名的间谍套件
特工装备：美国中情局历史上的著名的间谍套件特工装备:美国中情局历史上的著名的间谍套件不论詹姆斯邦德什么时候需要一个用来暗中抓拍盯梢对象照片或者从Auric Goldfinger镀金的紧握魔掌中逃脱的精巧设备时，他可以依托特勤处的Q部门那些天才般的头脑给出一个解决方案。
在现实世界里的那些服务于美国中央情报局和它的前身战略情报处的邦德们，可以在研究发展处得到类似的碟报工具。
从蚊子大小的无人飞机到时装相机，中情局满足其特工各种装备需求。
这其中的一些设备在中情局位于佛吉尼亚兰利的总部博物馆里展出。
尽管这个博物馆不对公众开放，最近中情局通过flicker发布了一系列已经解密了的历史上著名的间谍工具。
这里是其中最好的几个，即使我们自己想象中的装备室（Danger Room）在中情局的选择面前感到挫败。
上面的是；Belly Buster型手动监听钻在五十年代末和六十年代初为了在植入窃听设备，中情局用Belly Buster型钻在砖石墙上钻孔。
组装好以后，用腹部紧贴着钻机的底座，同时用手摇动钻机的手柄。
这套工具附带着几个其他型号钻头和配件。
信件提取器这个特殊的装置在第二次世界大战中用来从信封里取出信件却不破坏上面的封印。
像钳子一样的装置用来伸进没有封闭好的信封顶部缝隙里，然后将信件卷起来从信封里抽出来。
信件提取器这张图片展示为了将信件从信封里取出而将信件卷在设备的钳子上。
立体镜和皮套在第二次世界大战中，立体镜被用来帮助同盟国的分析者检查那些安装在飞机上的摄像机拍摄的敌国领土影像。
这个装置会让分析者看到三维立体的电影图像。
..蜻蜓版昆虫直升机十九世纪七十年代由美国中情局所属的研究发展处开发，这个微型无人飞行装置(无人机)是第一个尝试通过微型装置来收集情报而开发的昆虫般大的无人飞行装置。
中情局的水陆两栖潜水艇在十九世纪的五十年代中情局设计了这艘可供两人使用的水陆两栖潜水艇。
它不携带武器，内部空间狭小，并且需要“母船”的运输和保障供给，但是它能够行驶到普通船只到达不了的地方。
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sine wave R-load on heat
P.C.B. soldering land 5 mm ø sine wave R-load free in air
0 0.6 1.0 1.4
VF , instantaneous forward voltage (V)
元器件交易网
FBI2A4S1.......FBI2M4S1
2 Amp. Glass Passivated Bridge Rectifier
Dimensions in mm.
20 3.5
Plastic Case
Voltage 50 to 1000 V.
Current 2 A.
元器件交易网
FBI2 - 4S1 Characteristic Curves
TYPICAL FORWARD CHARACTERISTIC Tamb = 25° C FORWARD CURRENT DERATING CURVE
10
4
heatsink Tc
Tc
_
+
3 1.0
100
Jan - 00
Electrical Characteristics at Tamb = 25°C
VF IR Rth (j-c) Rth (j-a) Max. forward voltage drop per element at IF =2 A Max. reverse current per element at VRRM MAXIMUM THERMAL RESISTANCE Junction-Case. With Heatsink. Junction-Ambient. Without Heatsink. 1.0 V 5 A 12 ºC/W 40 ºC/W Jan - 00
Peak recurrent reverse voltage (V) Maximum RMS voltage (V) Max. Average forward current with heatsink without heatsink 8.3 ms. peak forward surge current
13.5 7
• Mounting Instructions
• High temperature soldering guaranteed: 260 ºC – 10 sc. • Recommended mounting torque: 8 Kg.cm.
Maximum Ratings, according to IEC publication No. 134
®
_
0.8 + 0.05
+
• Glass Passivated Junction Chips.
L
4 4 4
suffix –4
1 0.5
• UL recognized under component index file number E130180. • Lead and polarity identifications. • Case: Molded Plastic. • Ideal for printed circuit board (P .C.B.). • The plastic material carries U/L recognition 94 V-O.
0 0 25 50 75 100 125 150 175
Tamb, ambient temperature (°C)
MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
60 50 40 30 20 10 0 1 10
Number of cycles at 60 Hz.
(Jedec Method)
50 35
4.5 A at 65 ºC 2.0 A at 25 ºC 60 A 15 A2 sec 1500 V – 55 to + 150 °C – 55 to +150 ºC
Rating for fusing ( t<8.3 ms.) Dielectric strength (terminals to case, AC 1 min.) Operating temperature range Storage temperature range
FBI2A 4S1 FBI2B 4S1 100 70 FBI2D FBI2G 4S1 4S1 200 140 400 280 FBI2J 4S1 600 420 FBI2K FBI2M 4S1 4S1 800 560 1000 700
VRRM VRMS IF(AV) IFSM I2t VDIS Tj Tstg