Ballistic conductance of magnetic Co and Ni nanowires with ultrasoft pseudo-potentials
Ballistic electronic transport in Quantum Cables

a rX iv:c ond-ma t/14473v1[c ond-m at.m es -hall]24Ap r21Ballistic electronic transport in Quantum Cables Z.Y.Zeng ‡,Y.Xiang,and L.D.Zhang Institute of Solid State Physics,Chinese Academy of Sciences,P.O.Box 1129,Hefei,230031,P.R.China Abstract We studied theoretically ballistic electronic transport in a proposed mesoscopic structure -Quan-tum Cable.Our results demonstrated that Qauntum Cable is a unique structure for the study of mesoscopic transport.As a function of Fermi energy,Ballistic conductance exhibits interesting stepwise features.Besides the steps of one or two quantum conductance units (2e 2/h ),conductance plateaus of more than two quantum conductance units can also be expected due to the accidental degeneracies (crossings)of subbands.As structure parameters is varied,conductance width displays oscillatory properties arising from the inhomogeneous variation of energy difference betweeen adjoin-ing transverse subbands.In the weak coupling limits,conductance steps of height 2e 2/h becomes the first and second plateaus for the Quantum Cable of two cylinder wires with the same width.PACS numbers:73.23.Ad ,73.23.-b ,73.50.-hI.INTRODUCTIONEarly investigations of ballistic electronic transport through microconstrictions led to the discovery of conductance quantization.Initially this phenomenon was observed in two-dimensional electron gas(2DEG)systems,manifesting itself in2e2/h steplike variations of the conductance as a function of the transverse size of the narrowing1.It originates from the discrete character of propa-gating modes through the constriction due to the qauntization of the transverse momentum.Under approriate conditions,this phenomenon of conductance quantization should also occur in3D point contacts with small constriction diameters2.Ballistic electron transport through narrow constric-tions of different confining potential3has been extensively studied based on Landauer and B¨u ttiker approach4.For a long constriction(quantum wire or quantum waveguide),ballistic conductance is directly propotional to the interger number of propagating modes or conductance channels and increases with the constriction width or Fermi energy in steps of2e2/h each time a new channel opens up.Owing to the recent advances in modern nanotechnologies,such as molecular-beam epitaxy, electron-beam lithography,self-assembled growth etc.,it has been possible to design and fabricate various kinds of mesoscopic devices5,in which electron can retain phase coherence while traveling through the active region.Successful experimental demonstration of mesoscopic devices have stim-ulated in turn much theoretical interest in exploiting the wave nature of electrons5,6.Mesoscopic devices are different from traditional electron devices in principle.In analyzing and designing meso-scopic quantum devices,it is essential to take into account the quantum charater of electrons.Many kinds of quantum devices with various functions have been proposed and designed5,6.Research on these mesoscopic structures revealed many phenomena such as the quantized conductance of point contacts,persistent current through mesoscopic metallic ring,universal conductancefluctuations, Coulomb blockade,resonant tunneling,etc.7In particular,propagation of electrons along quantum wires of various geometries has been considered extensively8.More recently,del Alamo and Eugster have proposed and fabricated a new kind of mesoscopic device-coupled dual2D quantum wires(2D CDQW)structure asfield-effect directional couplers9.The operation principle of this device is based on the tunneling effects between electron waves propagating in the two adjacent waveguides through a controllable potential ter some groups10investigated its ballictic electronic transportproperties with and without the application of magneticfield.A new kind of nanostructure referred to as Coaxial Nanocable has been succesfully synthesized by Suenaga et al.11in1997and by Zhang et al.12in1998.It comprises a solid and a hollow conducting cylinders of mesoscopic size seperated by a insulating layer.If this insulating layer is not thich enough to forbiden electrons’tunneling,it can be viewed as a coupled mesoscopic structure formed by two3D quantum wires and a cylindrical potential barrier.This inspired us to propose a similar mesoscopic structure,Quantum Cable13,in which electron are confined in a Nanocable-like composite potential wells;i.e.,electrons in the inner wire are subjected to a solid cylinder potential well,while electrons in the outer wire are limited into a hollow cylinder well;and they can tunnel into each other wire through the cylindrical coupling barrier.The structure of Quantum Cable is schematically shown in Fig. 1.Our previous calculations13showed that Quantum Cable has perticular energy subband spectrum different from the2D CDQW.For ballistic conductance,it is believed that there exists some significant discrepancies between the2D and3D quantum wire14. Therefore we expect Quantum Cable will exhibit unique transport properties,which are unexpected in the usual2D CDQW structures.The paper is organized as follows.In Section II,we present the formulas for calculating the ballistic conductance from Landauer and B¨u tticker’s formula.Section III gives numerical calcula-tions for ballistic conductances in some cases.We summarize our results in Section IV.II.MODEL AND FORMULATIONWe consider ballistic electronic transport through the Qauntum Cable structure between two large bulk reservoirs.The Qunatum Cable comprises two coaxial cylindrical quantum wires-the inner wire is a solid cylinder well with radius R1and the outer a hollow cylinder well with inner radius R2and outer radius R3.Two cylindrical wires are coupled through a thin layer of potential barrier of width R B=R2−R1and height U B.The electrons are free to move along the z axis of Quantum Cable,whereas their motion in the radial direction is quantized.The cable length L is assumed to be,on the one hand,small compared to the elastic and inelastic mean free paths of the electrons(ballistic limit),and,on the other hand,large compared to the normal coherence length to ensure the absence of backscattering effects.Then the ballictic conductance of the Quantum Cable,G,is determined by the Landauer-B¨u ttiker formula4G=2e2hn,lΘ(E F−E nl),(2)where E F is the Fermi energy and E nl is the transverse part of the electron enenrgy in Quan-tum Cable,which satisfies the follow relation derived from the standard effective-mass boundary conditionsF1(k2,k3;R1,R2,R3)+m∗3k2m∗1k2J′n(k1R1)m∗2k3G2(k2,k3;R1,R2,R3)]=0,(3)whereF1(k2,k3;R1,R2,R3)=[K n(k2R2)I′n(k2R1)−K′n(k2R1)I n(k2R2)]×[J n(k3R3)Y′n(k3R2)−J′n(k3R2)Y n(k3R3)],F2(k2,k3;R1,R2,R3)=[K′n(k2R1)I′n(k2R2)−K′n(k2R1)I′n(k2R2)]×[J n(k3R3)Y n(k3R2)−J n(k3R2)Y n(k3R3)],G1(k2,k3;R1,R2,R3)=[K n(k2R1)I n(k2R2)−K n(k2R2)I n(k2R1)]×[J n(k3R3)Y′n(k3R2)−J′n(k3R2)Y n(k3R3)],G2(k2,k3;R1,R2,R3)=[K′n(k2R2)I n(k2R1)−K n(k2R1)I′n(k2R2)]×[J n(k3R3)Y n(k3R2)−J n(k3R2)Y n(k3R3)],(4) where k1=[(2m∗1/¯h2)E nl]1/2,k2=[(2m∗2/¯h2)(U B−E nl)]1/2,k3=[(2m∗3/¯h2)E nl]1/2;m∗i(i=1,2,3) is the electron effective mass;and,J n is the Bessel function offirst kind,Y n the Bessel functionof second kind and K n,I n are the modified Bessel functions15,respectively;f′(x)=d f(x)/dx.In the course of deriving Eq.(3),we adopted the hard-wall model,i.e.,U(ρ)=0forρ≥R3.From the definitions and properties of Bessel functions15,it can be deduced readily that,eigenstates with nonzero azimuthal quantum number are doubly degenerate(E nl=E−nl),which is the result of cylindrical symmetry of Quantum bining Eqn.(2)with Eqn.(3),one can calculate the ballistic conductances in an accurate way.Electron’s effective masses in different layers,in our calculations,are set as m∗1=5.73×10−32kg,m∗2=1.4m∗1m∗3=m∗1,as one did in the usual GaAs/Ga0.7Al0.3As heterostructures.III.RESULTS AND DISCUSSIONFor comparison,we begin with the study of ballistic conductances versus Fermi energy of single solid and hollow quantum cylinders and single2D quantum waveguide.In Fig.1we give the ballistic conductances for2D quantum waveguide,solid quantum cylinder and hollow quantum cylinder and their corresponding subband dispersions.It follows from Eqn.(2)that the ballistic conductance rises in step-like manner with the increasing Fermi energy,and that the distribution of the conductance stpes is determined by the transverse mode energy E nl.For2D quantum waveguide structure,electronic states in the channel are characterized by only one quantum number n,and, the transverse energy is given by E n=n2π2¯h2/(2m∗1a2)(n=1,2,3,···),where a is the width of the waveguide.Then conductance would increase a quantum conductance unit2e2/h each time Fermi energy goes across a transverse subband;the step width increases with the increment of Fermi energy and is decided by the energy difference between neighboring subbands.The step-fashioned conductance vs Fermi energy was plotted in Fig.1(a)for single2D quantum waveguide of width210nm.In the cases of3D cylindrical quantum wire structure,because of the azimuthal degeneration of the transverse modes(electrons with azimuthal quantum number n and−n have the same transverse momenta)steps of one(n=0)or two quantum conductance units(n=0) can be observed.While the steps of two quantum conductance units can only be expected in the weekly-coupling two2D quantum waveguides at low Fermi energies due to the twofold degeneracy of lowest subband energy dispersions.To verify this,we plotted the ballistic conductance for single solid quantum cylinder of radius60nm in Fig.1(b),and that for single hollow quantum cylinder of inner radius100nm and outer radius150nm in Fig.1(c).It is evident that,steps of oneor two quantum conductance units appeared.We also noticed that nonuniform distribution of conductance step width for solid cylinder;similar plateau-like structure as the2D waveguide exists in the ballistic conductance of hollow cylinder within consecutive energy domains.This feature can be understood from the subband spectrum of hollow cylinder,since its energy difference between transverse subbands belong to the same azimuthal quantum number n will be increased with the increase of the radial quantum number l in the similar way as2D quantum waveguide’s,while that between states of the different azimuthal quantum number n is comparatively large,thus one can observed its similar step-like conductance structure within consecutive energy regions as that in2D waveguide case.As a solid quantum cylinder is coupled with a hollow cylinder through a tunable barrier, Quantum Cable structrue is formed.It is therefore expected that coupling effects would reflected in the ballistic conductance profile.Fig.3presents the calculation results of ballistic conductance vs Fermi energy of Quantum Cable with structure parameters R1=30nm,R3−R2=30nm, U B=20mev for variational barrier width R B.With the increase of barrier width,that is to say, as the coupling between two cylinder wires becomes weak,more narrower conductance plateaus are displayed,some of conductance plateaus tend to be narrower while some becomes broader; some other becomes narrowerfirst and then broader.This individuality origins also from the unique subband structure of Quantum Cable,energy spacing between consecutive subbands varies inhomogeneously with the broadenness of the coupling barrier,as shown in our previous work13.In the extreme limit(i.e.,R B→∞or U B→∞),Quantum Cable turns into the uncoupled cylinders structure.Then ballistic conductance spectrum is simplily determined by the crude arrangement of subbands of solid and hollow quantum cylinders,and will show conductance charaters of both solid and hollow cylindrical wires,which can be easily found in the R B=20nm case.Another observable phenomenon is the gathering of conductance steps within Fermi energy4−7mev due to the subband bundling effects13for the weakening of the coupling between two cylinders.It should be noticed that,steps of three and four quantum conductance units can also be expected to be observed(see,for example,R B=8nm case and U B=35mev case in Fig.4).This feature stems from the accidental degeneracies(crossings)of transverse modes caused by some kind of symmetry. Since the subband(0,0)keeps the ground subband albeit of Cable structure parameters,and the subband(0,1)tends to be thefirst excited subband as the coupling becomes weak enough,thus onecanfind that the height offirst conductance step is always2e2/h,and that of the second will be also one quantum conductance unit as the coupling is weak enough;in other words,the steps of one quantum conductance unit tend toward low Fermi energy region as the barrier width increases.An alternative way to change the coupling strength between two wires is that the variation of coupling barrier height.In Fig.4we give the conductances for different barrier height from0 to40mev.As in the case of increased barrier width,ballistic conductances for lifted barrier height show similar features,except that,the total number of conductance plateaus increases in the former case while it is reduced in the later case.The reason is that the energies of most subbands tend to decrease for increasing width but increase for raising barrier height,as shown in the Cable subband spectrum in both cases13.In general,conductance plateaus of very narrow width or steps of two quantum conductance units are expected for the2D weakly coupled quantum waveguides with two same width waveguides, and they will be violated by the deviation of the width of one of the waveguides.Since,for such structure,crossing occurs between two states with the same symmetry16,then if the widths of the two waveguides are not the same,its defining potential will be clearly asymmetric and thus its eigensubbands do not exhibit subband crossings.However,plateaus of narrower width or of three or four quantum conductance units can be observed in the Quantum Cable of cylinders with different radius.For Quantum Cable structure,subband crossings is foreign to the parameters associated with cylinders radia.In Fig.5,conductances as a function of Fermi energy are plotted for different outer cylinder radius R1,where R B=5nm,R3−R2=30nm,U B=20mev.Although one does not see the steps of three or four conductance units,they can be assured to exist in the case of R1 being near31nm from the conductance curves for R1=30,31,32nm,or directly from the relation of subband energy with the inner cylinder radius13.In addition,one can notice that the second step of only one quantum conductance unit may not always move to abut against thefirst step of one conductance unit.We then can conclude that conductance steps of one quantum conductance unit 2e2/h appear as thefirst and second steps only if the cylindrical wires of Quantum Cable are of the same width.IV.CONCLUSIONSIn this paper,we studied ballistic electronic transport in Quantum Cable formed by a solidcylinder,hollow cylinder and a cylindrical coupling potential barrier.Because of the azimuthal degeneration of the transverse modes(electrons with azimuthal quantum number n and−n have the same transverse momenta),steps of one or two quantum conductance units can be observed in solid and hollow quantum cylinders;while in2D quantum waveguide,steps of one quantum conductance unit can only be expected.Since Quantum Cable is constructed by a solid and a hollow quantum cylinder which are coupled by a tunable potential barrier,apart from the above features,conductance will displays some properties originated from the coupling effects.As one of two cylinder widths or the width or height of the coupling barrier is varied,conductance plateaus of more than two quantum conductance units could be seen,due to the fact that transverse modes will cross for some parameters.Arising from the inhomogeneous variation of energy difference between adjoining subbands,some ballistic conductance plateaus exhibit oscillation.One plateau with conductance height of2e2/h is always thefirst conductance step irrespective of parameter values,since the transverse mode(0,0)keeps the ground subband whatever the value of structure parameters.As the coupling between two cylinders of the same width becomes weak,i.e.,the width or height of barrier increases,the other step of only one quantum conductance unit2e2/h shifts into the second ballistic conductance step.This phenomenon can also be explained from the subband spectrum of Quantum Cable.ACKNOLEDGEMENTThis work is supported by a key project for fundamental research in the National Climbing Program of China.References‡E-mail address:zyzeng@1.H.Van Houten,C.W.J.Beenakker,and B.J.von Wees,Semicond.Semimet.35,9(1992).2.J.A.Torres,J.I.Pascual,and J.J.Saenz,Phys.Rev.B49,16581(1994);A.G.Scherbakov,E.N.Bogachek,and Uzi Landman,ibid.53,4054(1996).3.G.Kirczenow,Solid State Commun.68,715(1988);A.Szafer and A.D.Stone,Phys.REv.Lett.62,300(1989);N.Garcia and L.Escapa,Appl.Phys.Lett.54,1418(1989);E.G.Haanappel and D.van der Marel,Phys.Rev.B395484(1989);A.Matulis and D.Segzda, J.Phys.Condens.Matter1,2289(1989);M.Yosefin and M.Kaveh,Phys.Rev.Lett.64, 2819(1990);E.Tekman and 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C.C.Eugster,Appl.Phys.Lett.56,78(1990);Phys.Rev.Lett.67,3586(1991).10.C.C.Eugster,J.A.del Alamo,M.J.Rooks,and M.R.Melloch,Appl.Phys.Lett.60,642(1992);C.C.Eugster,J.A.del Alamo,M.R.Melloch,and M.J.Rooks,Phys.Rev.B46, 10406(1992);ibid48,15057(1993);J.Wang,H.Guo,and R.Harris,Appl.Phys.Lett.59, 3075(1991);J.Wang,Y.J.Wang,and R.Harris,Phys.Rev.B46,2420(1992);J.R.Shi and B.Y.Gu,ibid.55,9941(1997).11.X.Suenaga,C.Colliex,N.Demoncy,A.Loiseau,H.Pascard,and F.Willaime,Science278,653(1997).12.Y.Zhang,K.Suenaga,C.Colliex and S.Iijima,Science281,973(1998).13.Z.Y.Zeng,Y.Xiang,and L.D.Zhang(unpublished).14.E.N.Bogachek,A.N.Zagoskin,and I.O.Kukik,Fiz.Nizk.Temp.16,1404(1990)[Sov.J.Low.Temp.Phys.16,796(1990)].15.Handbook of Mathematical Functions,edited by M.Abramowitz and I.A.Stegun(New York,Dover)(1972).16.M.A.Morrison,T.L.Estle,and ne,Quantum States of Atoms,Molecules,and Solids(Prentice-Hall Inc.,New Jersey)(1976).Figure CaptionsFig.1A schematic view of ballistic Quantum Cable structure,where R1is the radius of inner solid quantum cylinder,R2and R3are the inner radius and outer radius of outer hollow cylinder, respectively;two cylinders are coupled through a tunable potential barrier of width R B=R2−R1 and height U0.Fig.2Conductance as a function of Fermi energy and the corresponding energy dispersion for(a) 2D quantum waveguide of width210nm,(b)solid quantum cylinder of radius60nm and(c)hollow quantum cylinder of inner radius R2=100nm and outer radius R3=150nm.Fig.3Conductance of Quantum Cable as a function of Fermi energy for different barrier width R B,where structure parameters are chosen such that R1=30nm,R3−R2=30nm,U B=20mev.Fig.4Conductance of Quantum Cable as a function of Fermi energy for different barrier height U B,where structure parameters are chosen such that R1=30nm,R3−R2=30nm,R B=5mev.Fig.5Conductance of Quantum Cable as a function of Fermi energy for different solid cylinder radius R1,where structure parameters are chosen such that R B=5nm,R3−R2=30nm,U B=20 mev.11Fig.1 Zeng et al .Coupling BarrierzzR 1R 2R 3R BL2468(a)24681024681012(b)24681024680481216202428323640(c)-0,15-0,10-0,050,000,050,100,15246810Fig. 2 Zeng et al.k Z ( 1/nm )Fermi energy E F ( mev )E n e r g y (m e v )C o n d u c t a n c e G ( 2e 2/h )24681012R b = 0R b = 4 nm2468101214R b = 8 nm24681012 R b = 1 nmR b = 5 nm2468101214R b = 9 nm24681012 R b = 2 nmR b = 6 nm2468101214R b = 10 nm246810024681012R b = 3 nm246810R b = 7 nm246810246810121416Fermi energy E F ( mev )C o n d u c t a n c e G ( 2e 2/h )R b = 20 nmFig. 3 Zeng et al.24681012141618U B = 024681012U B = 15 mev24681012U B = 30 mev2468101214 U B = 5 mevU B = 20 mevU B = 35 mev24681024681012U B = 10 mev246810U B = 25 mev246810Fig. 4 Zeng et al.Fermi energy E F ( mev )C o n d u c t a n c e G ( 2e 2/ h )U B = 40 mev24681012R 1 = 26 nmR 1 = 29 nm2468101214R 1 = 32 nm24681012 R 1 = 27 nmR 1 = 30 nm246810121416 R 1 = 33 nm246810024681012R 1 = 28 nm246810R 1 = 31 nm2468100246810121416Fig. 5 Zeng et al.Fermi energy E F ( mev )C o n d u c t a n c e G ( 2e 2/ h )R 1 = 34 nm。
电磁场中英文词汇

有源网络active network导纳率admittivity安培电流定律Ampere's circuital law解析函数analytic function孔(缝)隙天线aperture antennas渐进表示式asymptotic expression第一类贝塞耳函数Bessel function of the first kind 边值问题boundary value problem击穿功率breakdown power布魯斯特角Brewster angle特征值characteristic value电路尺寸circuit dimension圆柱腔circular cavity圆波导circular waveguide圆极化circularly polarized环行器circulator复磁导率complex permeability复功率密度complex power density复矢量波动方程complex vector wave equation共轭问题conjugate problem共面波导coplanar waveguide (CPW)串扰cross-talk直流偏置DC biasδ函数delta function功率流(通量)密度density of power flux介质波导dielectric guide介质损耗dielectric loss耗散电流dissipative current失真distortions散度方程divergence equation主模dominant mode二重傅立叶级数double Fourier series动态场dynamic field本征函数eigen function本征值eigen value电荷密度electric charge density电磁兼容electromagnetic compatibility椭圆极化elliptically polarized能量储存energy storage等幅面equi-amplitude surface雕落场evanescent field雕落模式evanescent mode法拉第感应定律Faraday's law of induction远场far-field铁氧体陶瓷ferrite ceramics场方程field equation场量field quantity场源field source有限区域finite region四端口网络four terminal network傅立叶级数Fourier series傅立叶变换Fourier transformation增益gain几何绕射理论GTD (Geometrical Theory of Diffraction)波导相速度guide phase velocity波导波长guide wave length霍尔效应Hall effect第二类汉克尔函数Hankel function of the second kind高阶模high order mode喇叭天线horn antennas混合模hybrid mode虚部imaginary part红外频谱infra-red frequency spectrum非均匀媒质inhomogeneous media积分方程integral equation内阻抗internal impedance固有(本征)阻抗intrinsic impedance隔离器isolator各向同性物质isotropic matter克希荷夫电流定律Kirchhoff's current law电荷守恒定律law of conservation of charge漏电电流leakage current勒让德多项式Legendre polynomial线积分line integral线性极化linearly polarized洛伦兹互易定理Lorentz reciprocity theorem有耗介质lossy dielectric集中参数元件lumped-element磁滞损耗magnetic hysteresis磁损耗角magnetic loss angle磁矢量位magnetic vector potential匹配负载matched load最速下降法method of steepest descent 微带microstrip微波单片集成电路microwave monolithic 模式mode模式展开mode expansion模式图mode pattern单极天线monopole antenna互耦合mutual coupling各向异性nonisotropy非可逆器件nonreciprocal devices光纤optic fiber平行板波导parallel plate waveguide寄生效应parasite effect部分填充波导partially filled waveguide特解particular solution贴片patch天线方向性图pattern of antenna理想导体perfect conductor理想介质perfect dielectric相位常数phase constant相移器phase shifter相速度phase velocity坡印亭矢量Poynting vector品质因子quality factor准静态quasi-static雷达反射截面radar cross section (RCS)径向模radial mode径向波radial wave径向波导radial waveguide辐射电导radiation conductance辐射方向性图radiation pattern辐射功率radiation power辐射电阻radiation resistance射频radio frequency直角坐标rectangular coordinate递推公式recurrence formula相对磁导率relative permeability鞍点saddle标量格林定理scalar Green's theorem标量位scalar potential散射矩阵scattering matrix分离变量法separation of variables短路板shorting plate旁路电流shunt current信号完整性signal integrity单模single mode正弦的sinusoidal趋肤深度skin depth趋肤效应skin effect终端电压terminal voltage终端termination时谐time harmonic全透射total transmission超越方程transcendental equation传输线模式transmission line mode横电场transverse electric field横电磁波transverse electromagnetic wave二端口网络two port network无限(界)区域unbound region均匀平面波uniform plane wave均匀传输线uniform transmission line唯一性uniqueness单位法线unit normal单位切线unit tangent一致性几何绕射理论UTD (Uniform Geometrical Theory of Diffraction)矢量位vector potential电压源voltage source小波wavelet。
Conductance of an Artificial Atom in Strong Magnetic Fields

a rXiv:c ond-ma t/947035v16J ul1994Conductance of an Artificial Atom in Strong Magnetic Fields O.Klein,C.de C.Chamon,D.Tang,D.M.Abusch-Magder,X.-G.Wen,and M.A.Kastner Physics Department,Massachusetts Institute of Technology,77Massachusetts Ave.,Cambridge MA 02139S.J.Wind IBM T.J.Watson Research Center,Yorktown Heights,New York 10598(Submitted to Phys.Rev.Lett.6July 1994)Abstract The conductance resulting from resonant tunneling through a droplet of N ∼30electrons is used to measure its chemical potential µN .Abrupt shifts of µN occur at sharply defined values of the magnetic field,at which the state of the droplet changes.These are used to study part of the phase-diagram of the droplet in strong magnetic fields;we find evidence for a new phase in the spin polarized regime.We make a detailed comparison between theory and experiment:Hartree-Fock provides a quantitative description ofthe measurements when both spin-split states of the lowest orbital Landaulevel are occupied and a qualitative one in the spin polarized regime.PACS numbers:73.20.Dx,73.20.MfTypeset using REVT E XRecent experiments[1,2]have demonstrated the possibility of measuring the chemical potentialµN of a droplet of N electrons confined by an external potential,an artificial atom. Abrupt shifts ofµN occur at values of the magneticfield B at which the ground state(GS)of the droplet changes.These results have stimulated calculations of the B-N phase diagram, in which each phase is designated by the quantum numbers of the GS;the changes inµN(B) happen at the phase boundaries.Because exact numerical calculations are possible only for N≤6[3,4],approximate methods[5–7]have been used for larger N to account for electron-electron interactions.The strong magneticfield regime is the appealing place to test these approximations,because the most intriguing aspects of the phase-diagram occur at thesefields.In particular,MacDonald et al.[6],and Chamon et al.[7]have independently predicted the existence of new phases of a spin polarized droplet in a parabolic potential. These phases are especially interesting because any transition in the spin polarized regime is the consequence of many-body phenomena that cannot be explained by a single-electron picture.In this Letter,we present detailed measurements of a portion of the phase diagram in strong magneticfield.We propose a new systematic approach for comparing the experi-mental results with the ing this approach,wefind that Hartree-Fock(HF)[6,7] provides a quantitative description when both spin states of the lowest orbital Landau level (LL)are occupied,whereas a semi-classical model(SC)[5]does not,indicating that ex-change plays an important role.We alsofind evidence for a new phase in the spin polarized regime,which is described qualitatively by HF.The device that we study is of the type described by Meirav et al.[8].It consists of a two-dimensional electron gas(2DEG)in an inverted GaAs/Al x Ga1−x As heterostructure with electrostatic gates above and below it.The bottom gate is a highly conducting sub-strate of n+doped GaAs.A positive bias,V g,applied to the bottom gate varies the density of the2DEG.On the top surface of undoped GaAs,two metallic(TiAu)gates are litho-graphically patterned with a double constriction.Applying a negative bias to these top gates depletes the2DEG100nm underneath them,confining the electrons to an island be-tween the constrictions.Currentflows through the resulting electron droplet via the tunnel barriers caused by the constrictions.The top gate geometry of the device under investi-gation has been examined with an Atomic Force Microscope.The constrictions are poorly defined,but we estimate that the region between them is roughly500×500nm2.According to the simulation of the device by Kumar et al.[9],the external confinement potential of the droplet is approximately parabolic.Although all results presented here are for this one structure,we have observed similar features in samples of different geometries.The negative bias on the top gate is maintained constant during the experiment and the bottom gate voltage is varied in a narrow range near V g=160±1mV,for which the electron density of the2DEG regions outside the constriction is almost constant at 1.3±0.01×1011cm−2.The conductance G of the device as a function of V g at B=0T is shown in the lower inset of Fig.1.It consists of quasi-periodic sharp peaks(∆V g=1.2mV),crudely described by the coulomb blockade mechanism[10].In this model,when the bottom gate voltage is set between peaks,transport is suppressed by the charging energy U∼0.66meV necessary to add an electron to the droplet.Each period thus corresponds to the addition of one electron to the droplet.At resonance,the electrochemical potential of the droplet,µN−eαV g,is aligned with the Fermi energy of the leads and currentflows;current requires afluctuation of the charge on the droplet.Thus,the value of V g at which the peak occurs provides a measure ofµN.At T=0,µN=E N−E N−1,where E N is the energy of the N-electron GS.We begin by considering the effect of magneticfield on a single conductance peak.That is,we measureµN(B)at constant N.The value of the gate voltage at which the N th conductance peak occurs is plotted as a function of magneticfield between1and5T in Fig.1.McEuen et al.recognized that the change in behavior near1.6T results from the depopulation of all but the lowest orbital LL[5].The step-like behavior of the peak position above1.6T can be thought of as resulting from the transfer of electrons between the two spin-split states of the lowest orbital LL[5].Each step corresponds to a change in the quantum numbers of the GS,for example,the total spin of the droplet.The number of steps above1.6T is proportional to N,the number of electrons in the droplet,but the proportionality constant depends on the shape of the charge distribution.A novel way to characterize the data in Fig.1is to examine the separation inB of the upward steps.The peak conductance as a function of B has a sharp minimum at each of these steps[1].The n th minimum precisely determines B n,thefield for the n th step.(The B n are indicated by arrows in Fig.1.)We plot in Fig.2a the quantity(B n−B n−1)−1as a function of B n.Because each step corresponds to theflip of a spin,one may think of (B n−B n−1)−1as being roughly proportional to the spin susceptibility.Afit to the form y(B)=y o[(B−B′)/B′]ǫgives B′=1.7±0.02T andǫ=−0.41±0.06for our data;the solid curve in Fig.2a shows thefit.The same functional form alsofits the experimental data for two other devices with different geometries(500×700nm2and450×900nm2)and larger numbers of steps(∼25and35);wefindǫ=−0.37±0.1for all three devices.Plotted in Fig.2c is the result obtained when(B n−B n−1)−1is determined usingµN of the SC model of McEuen et al.[5].For a parabolic potential with cylindrical symmetry, V(r)=m∗ω20r2/2,the SC spatial density of electronsρ(r)is approximately that of classical electrons in zero magneticfieldρ(0)measurement,there is also an additional step at B c=3.75T=2.2B′(filled circle in Fig.1) not predicted by the SC model.For all devices studied wefind a step at2B′,marking the complete depopulation of the higher energy spin state,and a step at largerfield,in the spin polarized regime[11].For one device,we have explored the phase diagram beyond2.7B′and have found evidence for other steps[12].The step at B c behaves in a way that is very different from those between B′and2B′. By examining successive peaks in G vs.V g(lower inset of Fig.1),i.e.probing the droplet at successive N,wefind that each step inµN(Fig.1)shifts to higher B when another electron is added to the droplet.We have averaged the shift over four consecutive conductance peaks and have plotted its inverse[B n(N)−B n(N−1)]−1in Fig.3a for each of the steps in Fig.1. This quantity measures the slope of the phase boundary(∂N/∂B).It is clear from Fig.3a, that the step at B c has a larger slope than those at lower B.The temperature dependence of the step at B c is also peculiar.Figs.4a and b show that the features between1.7and3.4T disappear by500mK as T is increased.This behavior is now well understood[1].In clear contrast,the height of the step at B c=3.75T does not change with temperature up to800mK,our measurement limit.To compare our results with a more sophisticated theory,we have performed a HF calculation ofµN(B),choosing the states of the symmetric gauge as the complete basis set,with the Hilbert space truncated to the two spin states of the lowest LL.Because of exchange,the HFρ(r)is more compact than the SCρ(r)with larger incompressible regions, smaller compressible regions and a more rapid decrease with r near the edge of the droplet [7].In Fig.2b,we plot(B n−B n−1)−1as a function B n extracted fromµN(B)for the HF model with N=27electrons and¯hω0=2.1meV.As with the SC model,these parameters are chosen to match the number of steps in the peak position and the experimental value of B′,respectively.Like the value of¯hω0used for the SC model(1.8meV),the¯hω0thatfits the HF calculation is in agreement with the value2±1meV calculated by Kumar et al.from the sample geometry[9].The HF value of N=27,however,is different from that(N=42)whichfits the SC model.This discrepancy is a result of the difference in shape of the charge distribution.In the HF model,the number of steps inµN(B)is equal to N/2because the two spin states are equally occupied at B′,and half the electronsflip their spin as thefield is increased between B′and B I.It is obvious from Fig.2b that the HF calculation is in excellent quantitative agreement with the experiment(Fig.2a).This is particularly impressive since there are no otherfitting parameters once N and¯hω0arefixed.In particular,the HF model predicts correctly the apparent divergence of(B n−B n−1)−1near B′,in clear contrast with the SC model.Afit to the HF results with y(B)givesǫ=−0.43±0.03,which is the same as the experimental value within the errors.The apparent divergence of(B n−B n−1)−1in Fig.2a suggests that because of exchange the two spin states of the lowest LL are equally occupied at B′in our droplet.This is consistent with another experimental observation:a new step inµN(B)is added between B′and2B′for every two electrons added,implying that the two spin states of the lowest LL of our droplet are equally populated with increasing N.The HF calculation predicts that the last spinflip occurs at B I=3.15T=1.85B′.Like the SC model,the HF ratio B I/B′is nearly independent of N or¯hω0.Thus,above B I the droplet is spin polarized.MacDonald et al.[6],and Chamon et al.[7]showed that there exists a region in the B-N phase diagram(sketched in the upper inset of Fig.1)in which, for N<N c∼100,the GS of the spin polarized droplet is the maximum density droplet (MDD).In the MDD state,all the single-particle eigenstates of angular momentum index m=0,1,..N−1are occupied,leading to an approximately constantρ(r)in the droplet. The MDD is of course the GS of non-interacting electrons at high B,but surprisingly it is also the GS in a region of B-N even in the presence of repulsive interactions[6,7].With increasing magneticfield the radius of the MDD decreases,the electrons get closer together,and the interaction energy eventually favors a larger area droplet.HF[7]predicts that,at B c,the edge undergoes a reconstruction and electrons form an annulus at a distance ∼2ℓaway from the central droplet,causing an abrupt upward shift ofµN at B c of roughly the same height as the step at B I[7].In the HF calculation,B c/B I is almost independentof¯hω0,but it decreases with increasing N[6,7]for N<N c.The excellent quantitative agreement between HF and the experiment for B≤2B′, strongly suggests that the MDD is formed in our experiment above2B′.The HF calculation predicts that the transition to the reconstructed droplet occurs at B c=4.21T for our droplet, a value larger than the one observed experimentally.In this regard,it is important to bear in mind that although the HF energy of the MDD is exact because the MDD is an exact eigenstate of the many-body Hamiltonian[6],the HF energy of the reconstructed droplet is only variational.Therefore,the calculated value of B c is an upper bound on the true transitionfield.Indeed,an exact calculation for small N[3,4]shows that the HF model overestimates B c.Turning to the slopes of the phase boundaries,one sees in Fig.3that[B n(N)−B n(N−1)]−1from HF(∼2.2×10−3G−1)agrees fairly well with experiment(3±1×10−3G−1) between B′and2B′.However,at B c,the HF value3.2×10−3G−1,is smaller than the experimental value,8±1.5×10−3G−1.The quantities[B n(N)−B n(N−1)]−1at B I and B c are the slopes of the phase boundaries in the B-N phase diagram between which the MDD is the GS.The fact that[B n(N)−B n(N−1)]−1is larger at B c than at B I suggests that the MDD does not exist above some N c[6,7].The experimental observation of both a larger value of[B n(N)−B n(N−1)]−1at B c and a smaller value of B c than the ones predicted by HF suggests that N c is smaller than predicted by HF.We have extended the HF calculation to obtain excited states and thus study the tem-perature dependence ofµN.Wefind that the HF excitation spectrum(proportional to the height of theµN steps)has an energy scale4times larger than the experimental one over the entire magneticfield range.Nonetheless,the steps in the region between B′and B I are predicted to wash out more rapidly with increasing T than the one at B c in agreement with observation(Fig.4).Finally,we note that HF also describes the B dependence of the conductance peak height [12].HF predicts the experimentally observed[12]decrease in peak height just below B c followed by an increase for B above B c.The increase above B c is ascribed to the reducedseparation between the edge of the droplet and the leads when the annulus is formed.The failure of HF to predict the size of the magneticfield window in which the MDD is the GS(Fig.2b)and the dependence of B c on N(Fig.3b)may indicate that correlations are playing an important role in this transition.The downward step at about3.5T(Fig.1)is also reminiscent of features predicted to result from correlations[3].In conclusion,we have made a detailed study of the conductance peak positions in strong magneticfields.We have focused on that part of the phase diagram in which only the lowest orbital LL with its two spin-split states are occupied.By looking at the increase in magnetic field required toflip each successive spin,we are able to make a quantitative comparison between experiment and theory.Wefind that HF is in excellent quantitative agreement with experiment at lowfield.However,when the droplet is spin polarized a new transition occurs which is only qualitatively described by HF.We are grateful to Udi Meirav who made the samples.We thank R.C.Ashoori,D.B. Chklovskii,K.A.Matveev and N.S.Wingreen for many useful discussions.We also thank Nathan and Paul Belk for their help in the experiment.This work was supported by NSF Grant No.ECS9203427and by the U.S.Joint Services Electronics Program under Contract No.DAALL03-93-C-0001.REFERENCES[1]P.L.McEuen et al.,Phys.Rev.Lett.66,1926(1991).[2]R.C.Ashoori et al.,Phys.Rev.Lett.68,3088(1992).[3]S.-R.E.Yang et al.,Phys.Rev.Lett.71,3194(1993).[4]D.Pfannkuche et al.,Physica B189,6(1993).[5]P.L.McEuen et al.,Physica B189,70(1993).[6]A.H.MacDonald et al.,Aust.J.Phys.46,345(1993).[7]C.de C.Chamon et al.,Phys.Rev.B49,8227(1994).[8]U.Meirav et al.,Phys.Rev.Lett.65,771(1990).[9]A.Kumar et al.,Phys.Rev.B42,5166(1990).[10]C.W.J.Beenakker,Phys.Rev.B44,1646(1991).[11]We point out that while the results reported here are completely reversible and con-tinuous,we have,from time to time,observed hysteresis and discontinuous behavior in strong magneticfields.[12]O.Klein et al.(unpublished).FIGURESFIG.1.Upper Inset:B-N phase diagram of the droplet.The boundaries corresponding to a change of the total spin of the droplet in the2>ν>1regime are omitted;the MDD domain of stability is limited on one side by B I(N),the boundary of the spin polarized phase,and on the other side by B c(N),where there is a reconstruction of the charge density.Above N c the MDD phase is terminated.Lower Inset:Conductance through the island as a function of the bottom gate voltage at B=0T.Main:Position of the N th conductance peak as a function of B at T=100mK.We have used a constant factorα=0.55to convert the bottom gate voltage scale to energy[1,5].The arrows indicate the minima of the conductance peak height.B n is thefield for the n th minimum above1.6T,with n={1,...,14}.FIG.2.(a)(B n−B n−1)−1vs.the B n obtained from Fig.1.The error bars represent the spread of the data when the analysis is repeated for other conductance peaks on the same device.(b)and (c)results obtained with the HF(N=27and¯hω0=2.1meV)and SC(N=42and¯hω0=1.8meV) calculations.The solid line is afit with y(B)=y o[(B−B′)/B′]ǫwhere B′=1.7±0.02T and ǫ=−0.41±0.06for the experiment andǫ=−0.43±0.03for the HF.B I indicates thefield onset of the spin polarized regime in both models.The solid circle indicates B c.The dashed line in(c) is the constant interaction model[5](the scale is expanded by a factor10).FIG.3.(a)[B n(N)−B n(N−1)]−1is the slope of the phase boundary;it is measured by looking at the shift in B-field of the same B n between two adjacent conductance peaks(or equivalently when an electron is added to the droplet).The plotted value is the average over4consecutive peaks and the error bars are the standard deviations(b)HF and SC values of[B n(N)−B n(N−1)]−1 measured from the simulatedµN(B).FIG.4.Magneticfield dependence of the peak position at100and500mK.(a)and(b)show the behavior below2B′,while(c)and(d)show it above2B′.In eachfigure,the peak position is offset for clarity.。
磁学计量常用名词术语及定义

磁学计量常用名词术语及定义本名词术语及定义适用于磁学计量工作中所涉及到的技术理论和技术方面的一些基本的,常用的磁学量和磁特性及其计量术语。
1 范围本标准规程规定了磁性材料常用名词术语的定义。
本标准适用于各类磁性材料。
2 引用文献下列标准所包含的条文,通过在本标准中引用而构成为本标准条文。
本标准出版时,所示版本均有效。
所有标准都会被修订,适用本标准的各方应探讨适用下列标准最新版本的可能性。
CEI/IEC 60050-221 International Standard / Magnetic materials and components JJG 1013-89 磁学计量名词术语及定义(试行)3 一般术语 general terms3.1 场 field可用数和(或)量表示的某一现象的空间分布。
3.2 磁场 magnetic field (1.2) 场的一种。
由磁场强度矢量H 和磁通密度矢量B 这两个特征组成的电磁场。
3.3 磁通密度(磁感应强度) magnetic flux density (magnetic induction)一种无散轴矢量,它在空间任何点上都定义了该点磁场,该矢量的值由作用于一给定速度的带电粒子的力来决定,即力歹等于电荷量乘以速度下与磁通密度万的矢量积。
B v Q F ⨯= .注:(1) 实际应用中,通常将穿过均匀磁化的磁体单位横截面积磁通称为磁通密度BA B φ=式中Φ是穿过磁体的磁通:A 是磁体的横截面积,B 由两个分量组成,一个由磁场"在磁体所在空间引起的分量.H 0μ,另一个由磁体自身磁化强度M 引起的分量M 0μ,也称为内禀磁通密度,习惯用i B 表示。
)(00H M H B B i +=+=μμ(2) 当磁体在交变磁场作用下,一周期内磁通密度和内禀磁通密度的最大绝对值称为磁通密度的峰值B 和内禀磁通密度峰值i B。
单位名称为特,单位符号为T 。
3.4 磁通Φ magnetic flux Φ磁通密度的面积分。
一些物理里面名词的中文对照(大部分是材料领域的)

Abelian group 阿贝尔群,又称Abel群ablation 烧蚀abnormal dispersion 反常色散Abrikosov vortex lattice 阿布里科索夫涡旋线格子Abrikocov vortex state 阿布里科索夫涡旋态absorber 吸收体absorption spectroscopy 吸收光谱abundance 丰度acceptor doping 受主掺杂acceptor impurity 受主杂质accumulation layer 累积层achromatic phase matching 消色差相位匹配achromatic wave plate 消色差波片achromatism 消色差[性]ac Josephson effect 交流约瑟夫森效应,又称交流Josephson效应acoustic compliance 声顺acoustic ohm 声欧[姆]acoustic stiffness 声劲[度]acoustic-optic tensor 声光系数张量acousto-optic effect 声光效应acousto-optic Q-switch 声光Q-开关acousto-optic signal processor 声光信号处理器acousto-optical tunable filter 声光可调滤波器actinide element 锕系元素activated tunneling 激活隧穿active device 有源器件active region 激活区addressing electrode 寻址电极adiabatic theorem,绝热定理adiabatic transformation 绝热变换adiabatic transport,绝热输运adiabaton 浸渐子,绝热子advection 平流aerodynamic sound 空气动力声aersol 气溶胶affinity potential 亲和势aggregate 聚集体aggregation 聚集Aharonov-Bohm (AB) effect AB效应,又称Aharonov-Bohm (AB) 效应Aharonov-Bohm (AB) flux AB磁通,又称Aharonov-Bohm (AB)磁通allowed state 容许态alpha decay ( -decay) 衰变alpha particle ( -particle) 粒子Altshular-Aronov-Spivak (AAS) effect AAS效应,又称Altshular-Aronov-Spivak效应amplification without inversion 无反转放大amplitude limiting 限幅amplitude transformer 变幅杆Andreev reflection 安德列也夫反射,又称Andreev反射Andreev mirror 安德列也夫镜[子],又称Andreev镜[子] Andreev scattering 安德列也夫散射,又称Andreev散射angular resolved photoemission spectroscopy 角分辨光电子谱[学] anisotropic confinement 各向异性限域anisotropic scatterer, 各向异性散射体anisotropy energy 各向异性能anomalon 反常子anomalous power laws 反常幂[次]率anomalous proximity effect,反常临近效应anomaly 反常antidot 同quantum antidot 反量子点antidodal point 腹点antigravity 反引力antihyperon 反超子anti-localization, 反局域化antimeson 反介子anti-exclusive principle 反不相容原理antiferromagnetic interaction 反铁磁相互作用antiferromagnetic semiconductor 反铁磁半导体anti-Stokes scattering 反斯托克斯散射anti-time ordered function, 反时序函数anyon 任意子aphelion 近日点, 远核点areal density 面密度armchair nanotube 扶手椅型纳米管arrayed waveguide gratings 阵列波导光栅artificial atom,人[工]构[造]原子artificial barrier 人工势垒artificial elment 人造元素atom laser 原子凝射器atom optics 原子光学atom trapping 原子陷俘,原子捕获atom waveguide 原子波导atomic clock原子钟atomic diffraction 原子衍射atomic fountain 原子喷泉atomic form factor 原子形状因子atomic time 原子时attenuation 衰减attosecond X-ray pulse 阿秒X射线脉冲Auger process 俄歇过程,又称Auger过程avalanche counter 雪崩计数器avalanche effect 雪崩效应avalanche photodiodes,apd 雪崩光电二极管azimuth 方位角back-action evasion 非干扰[测量]background radiation 本底辐射,背景辐射background temperature 本底温度, 背景温度balanced homodyne detection平衡零拍探测ballistic aggregate 弹道聚集体ballistic aggregation 弹道聚集ballistic electron injection 弹道电子注入ballistic transport弹道输运ballistics 弹道学band bending 带弯曲band index 带指标band of rotation-vibration 振转[谱]带band offset 带阶band repulsion 带排斥band theory 能带论bar 巴(压强单位),杆Barkhausen noise 巴克豪森噪声,又称Barkhausen噪声barn 巴恩(截面单位,10-24厘米2)barrier 势垒barrier curvature 势垒曲率barrier height 势垒高度barrier state 势垒态barrier tunneling 势垒隧穿base-centered orthorhombic lattice 底心正交格[子] base line 基线base material 基质base metal 碱金属basis vector 基矢beam 束,梁beam dump 束流捕集器beam focusing 束流聚焦behaviour 行为,性能Bell inequality贝尔不等式,又称Bell不等式bend resistance,弯曲电阻bent crystal 弯晶Berry phase 贝里相位,又称Berry相位βdecay β衰变βradioactivity β放射性βray β射线βspectum β谱βstability line β稳定线bevatron 吉伏质子加速器(高能质子同步稳相加速器)bicritical point 双临界点bicrystal junction 双晶结big bang model 大爆炸模型binary diffractive optical element 二元衍射光学元件bioastrophysics 天体生物物理学biochip 生物芯片bipolar junction transistor 双极[结]晶体管bit rate 比特率blackness 黑度blaze line 闪耀角bleaching effect 漂白效应blob 团迹,链滴Bloch electron 布洛赫电子,又称Bloch电子Bloch frequency,布洛赫频率,又称Bloch频率Bloch oscillation,布洛赫振荡,又称Bloch振荡Bloch theorem 布洛赫定理,又称Bloch定理blockade 阻塞Blonder-Tinkham-Klapwijk [BTK] model BTK模型body-centered cubic lattice 体心立方格[子]body-centered orthorhombic lattice 体心正交格[子]Bogoliubov [-de Gennes] equations 博戈留波夫[-得简斯]方程,又称Bogoliubov [-de Gennes]方程Boltzmann distribution 玻尔兹曼分布Boltzmann transport equation,玻尔兹曼输运方程bond-angle order 键角有序bond-orientational order 键取向有序bond polarizability 键极化性bond valence 键价boojum 布经(超流氦3中的取向织构)bosonization of field operators 场算符的波色化Bragg peak 布拉格峰,又称Bragg峰Bragg plane 布拉格平面,又称Bragg平面Bragg reflection 布拉格反射,又称Bragg 反射Bragg reflectors 布拉格反射器,又称Bragg 反射器Bragg waveguide 布拉格波导,又称Bragg 波导break junction 断裂结breathing mode呼吸模breeder 增殖反应堆breakup reaction 崩裂反应bright state 亮态brittleness 脆性buffer amplifier 缓冲放大器buffer gas 缓冲气体buffer layer, 缓冲层burn-up 燃耗Büttiker formula, 比特克公式,又称Büttiker公式buzzer 蜂鸣器C-15 structure C-15结构C[a]esium clock 铯钟calorie 卡【洛里】candle 烛光candescence 白热,又称白炽canonical commutation relation 正则对易关系canonical variable 正则变量cantact angle 接触角canted spin order倾斜自旋有序cantilever 悬臂(原子力显微镜中的)canthotaxie眼角[式]排列(另文说明)carbon cycle 碳循环(恒星内部的)carbon nanotube 碳纳米管carrier 载流子carrier concentration 载流子浓度carrier diffuse 载流子扩散carrier reservoir 载流子库Cartesian coordinates 笛卡儿坐标Cauchu-Schwarz inequality Cauchu-Schwarz不等式cavity dark state 腔暗态cavity dumping 腔倒空cavity quantum electrodynamics 腔量子电动力学cavity resonator [谐振]腔共振器14C dating 碳14测年celestial X-ray source 宇宙X 射线源center of inversion 反演中心center of moment 矩心central collision中心碰撞center-of-mass energy 质心系能量centrifuge 离心机centrifugal separation 离心分离ceramic 陶瓷chain folding 链折叠chain statistics 链统计学chalcogenide 硫属化物channel waveguide 沟道波导chaos synchronization 混沌同步chaotic communication 混沌通讯chaotic noise 混沌噪声characteristic impedance 特性阻抗characteristic curve 特征曲线charge-separated plasma 电荷分离等离子体(正负电荷在空间不同区域的等离子体) charge imbalance 电荷不平衡charge ordering 电荷有序charge parity effect,电荷宇称效应charge qubit 电荷量子比特(超导量子比特的一种)charge-phase qubit 电荷-相位量子比特(超导量子比特的一种)charge reservoir 电荷库charge stiffness 电荷劲度(衡量外场作用下电荷被自由加速的难易程度)charge-spin coupling电荷自旋耦合(用于自旋电子学)charge stripe phase 电荷条纹相charge-to-mass ratio 荷质比charge transfer insulator 电荷转移绝缘体charge transfer salt 电荷转移盐charge velocity 电荷速度(见于电荷-自旋分离现象)charging energy,充电能chemical shift 化学位移chiral liquid crystal 手征液晶chiral molecule手征分子,又称手性分子chiral symmetry broken 手征对称[性]破缺chirp啁啾chirped Gaussian pulse 啁啾高斯脉冲chirp filter 啁啾滤波器,又称线性调频滤波器,或色散延迟线chopper 斩波器circumlunar orbit 环月轨道circumsolar orbit 环日轨道circumterrestrial orbit 环地轨道cis-lunar space 月地空间clad 覆盖clamping 箝位classical fluid 经典液体clean limit [干]净极限cleaved coupling cavity 解理耦合腔cloning fidelity克隆保真度closed shell 满壳层,又称闭壳层,英文又称closure shellcluster state簇态CNO cycle 碳氮氧循环coalescence 聚合, 并合code 1,[代]码;2,密码;3,符号coding 编码codirectional coupling 同向耦合coefficient of correlation 关联系数coefficient of elasticity 弹性系数coexistence line 共存线(相图中的)coexisting phase 共存相coherence factor 相干因子coherence length,相干长度coherent atomic recoil 相干原子反冲coherent electron tunneling 相干电子隧道coherent peak 相干峰coherent photoassociation 相干光缔合coherent population oscillation相干布居振荡coherent population trapping相干布居囚禁coherent population transfer相干布居迁移coherent structure 拟序结构coherent terahertz waves相干太赫波coherent transient effects 相干暂态效应coherent trap 相干捕获cold finger 冷头cold fusion 冷聚变collective coordinate 集体坐标collective mode 集体模collective motion 集体运动collective pinning model 集体钉扎模型collinear phase matching 共线相位匹配colloid 胶体,胶质colloidal metal 胶体金属colored noise 色噪声colossal magnetoresistance [CMR] 庞磁电阻commensurate lattice 公度格子compact star 致密星compensated impurity 补偿杂质complementary metal oxide semiconductor [CMOS] 互补金属氧化物半导体complex 1,复合体;2,络合物complex analytical signal theory 复解析信号理论complex-conjugate pulses 复共轭脉冲compliance 1,柔度;2,顺度composite Fermion 复合费米子compression of ultrashort pulses 超短脉冲压缩compressor 压缩器,压机concurrence并发纠缠,又称量子并发condensate 凝聚体condensation energy 凝聚能condenser 冷凝器conductance fluctuation, 电导涨落conductance quantization 电导量子化conduction electron 传导电子confinement 1,约束(等离子);2,限域(凝聚态);3,禁闭(高能)congregating effect 聚集效应conjugate variable 共轭变量conservation of angular momentum 角动量守恒conservation of crystal momentum 晶体动量守恒conservative dislocation motion 保守位错运动(位错沿滑移面平行于Burgers矢量运动无净质量流)conservation of energy 能量守恒conservation law of flux 磁通守恒律conservation of momentum 动量守恒conservation of particle number粒子数守恒contact angle 接触角contact potential 接触势contact resistance 接触电阻continuation 延拓continuous group 连续群contour line 等值线contour map 等值线图contradirectional coupling反向耦合conventional unit cell 惯用单胞,简称单胞convergence factor 收敛因子conversion electron 内转换电子coolant moderator 载热减速剂cooperative diffusion 合作扩散Cooperon, 库珀子Cooper pair box 库珀对盒子coplanar waveguide 共面波导copolymer 共聚物core energy 芯能core nucleus 核芯[核]correlated spontaneous emission 关联自发发射correlation exponent 关联指数cosmic aerodynamics 宇宙气体动力学cosmic age 宇宙年龄cosmic constant 宇宙常量cosmic [microwave] background radiation [CMBR] 宇宙[微波]背景辐射cosmic microwave background 宇宙微波背景cosmic string 宇宙弦cosmochemistry 宇宙化学,天体化学cosmological nucleosynthesis 宇宙核合成cosmos 宇宙co-tunneling 共隧穿Couette flow 库埃特流Coulomb blockade 库仑阻塞Coulomb gap 库仑隙Coulomb interaction 库仑[相互]作用Coulomb island 库仑岛,又称单电子岛(single electron island)Coulomb potential 库仑势Coulomb repulsion 库仑斥力Coulomb staircase 库仑台阶counter telescope 计数器望远镜coupled-channels model 耦合道模型coupled mode theory 耦合模理论coupled waveguides,耦合波导coupled wells耦合阱coupling energy 耦合能coupling strength 耦合强度covalent bond 共价键creep wave蠕波,又称爬波critical assembly [核反应堆]临界装置critical density 临界密度critical dimension 临界维度cross-phase-modulation 交叉相位调制cross field 交叉场cross junction, 十字结crosstalk attenuation 串扰衰减crystal-field splitting 晶[体]场劈裂crystalline anisotropy晶态各向异性crystal symmetry class 晶体对称类cubic lattice 立方格子cuprate 铜氧化物curie 居里(非国际制放射性活度单位)current bias 电流偏置current operator 电流算符cutoff energy,截止能量cyclone 气旋cyclotron effective mass 回旋有效质量D/A converter 等于digital to analog converter 数模转换器damping radiation 阻尼辐射dark current 暗电流dark energy 暗能量dark state 暗态dark-state polariton 暗态光极化子date line 日界线dc Josephson effect 直流约瑟夫森效应,直流Josephson效应dc SQUID (superconducting quantum interference device) 直流超导量子干涉器Debye wave vector 德拜波矢decay heat 衰变热decay time,衰减时间deceleration 减速度decibel 分贝decoherence 退相干,又称消相干decoherence-free 无退相干,又称无消相干decontamination factor 去污因子decoupling epoch 退耦期decoy state 诱骗态deformation potential,形变势degeneracy collapse 简并塌缩degenerate pressure 简并压degenerate star 简并星de Gennes-Taupin length de Gennes-Taupin长度degree of order 有序度de Haas-Shubnikov effect de Haas-Shubnikov效应delay time,延迟时间demultiplexer 解复用器dendrite 1,枝晶;2,枝蔓;3,枝蔓体dense coding 密集编码dense wavelength division multiplexing 密集波分复用density correlation function,密度关联函数density distribution 密度分布density wave 密度波depairing 拆对dephasing length,退相位长度depinning 脱钉[扎]depleted Uranium 贫化铀deplation force 排空力(胶体物理用语)depletion layer 耗尽层descreening 去屏蔽deterministic equation 确定(论)的方程deuterium 氘, 即重氢deuterium oxide 重水dextrorotation 右旋diabatic approach 非绝热近似diagnostics 诊断学diagonal element 对角元diagonal matrix 对角矩阵diagonalization 对角化diamond structure 金刚石结构diblock copolymer 双嵌段共聚物dielectric response function 介电响应函数dielectric function,介电函数dielectric microcavity 介电[质]微腔dielectric reflector 介[电]质反射器differential conductance 微分电导differential input 差分输入differential rotation 较差自转(天文学用语)differential scanning calorimetry 差分扫描量热术diffraction-free beam 消衍射光束diffractive binary optics 衍射二元光学diffuseness [parameter] 弥散参数diffusion constant,扩散常数diffusion current 扩散电流diffusion region 扩散区diffusive transport,扩散输运digit 数字digital circuit 数字电路digital cross connect 数字交叉连接digit[al] to analog converter (DAC) 数模转换器digital micromirror device 数字微镜器件dilation 膨胀dilute phase 稀相dilation symmetry 伸缩对称dimensionless conductance 无量纲电导dimer 二聚体dimerization 二聚化dipole interaction 偶极相互作用dipole giant resonance 偶极巨共振Dirac braket 狄拉克括号Dirac picture 狄拉克绘景, 即相互作用绘景directed diffusion 定向扩散directional bond 定向键directional coupler 定向耦合器directional ordering 取向有序directional quantization 方向量子化direction of magnetization 磁化方向direct lattice 正格子,又称正点阵direct transition 直接跃迁dirty limit 脏极限dirty-metal regime,脏金属区discontinuity 1,不连续[性];2,突变[性] dislocation network 位错网络disordered alloy 无序合金disordered system 无序系统dispersion compensation 色散补偿dispersion-managed solitons 调控色散孤子dissipationless flow 无耗散流dissociation energy 离解能distillable entanglement 可萃取纠缠distinguishable states可区分态distributed Bragg reflector 分布布拉格反射器domain 1,畴;2,[定义]域;3,区域donor level 施主能级dopant 掺杂物doping 掺杂dosimetry 剂量学double-barrier tunneling,双势垒隧穿double exchange interaction 双交换相互作用double heterostructure DH 双异质结doublet state 双重态dressed atom 着衣原子,又称缀饰原子droplet model 小液滴模型Drude model,德鲁德模型duty ratio 占空比d-wave pairing d波配对dyad 并矢dynamical mass 动力学质量(08.02dynamic random access memory [DRAM] 动态随机存储器dynamic screening,动态屏蔽dynamically induced coherence 动态诱导相干dynamo theory 发动机理论dyne 达因early universe 早期宇宙eccentricity 偏心率eclipse 1,食;2,交食edge channel,边缘通道edge dislocation 刃[型]位错edge state,边缘态effective field theory 有效场理论effective Hamiltonian 有效哈密顿量effective mass approximation,有效质量近似Einstein-Podolsky-Rosen thought experiment EPR思想实验Einstein-Podolsky-Rosen effect EPR效应Einstein-Podolsky-Rosen pair EPR对Einstein-Podolsky-Rosen paradox EPR佯谬elastic compliance 弹性顺度elastic deformation 弹性形变electrical isolation 电绝缘electric breakdown 电击穿electric capacity 电容electric resistance 电阻electrical quadrupole moment 电四极矩electrochemical potential 电化学势electromagnetic absorption 电磁吸收electromagnetically induced absorption 电磁感生吸收electromagnetically induced transparency 电磁感生透明electromagnetic-environment effect,电磁环境效应electron backscattering pattern 电子背散射图样electron-beam lithography 电子束刻蚀electron configuration 电子组态electron density 电子密度electron-doped high temperature superconductor 电子掺杂的高温超导体electronegativity 电负性electron-electron interaction,电子-电子相互作用electron-hole pair 电子空穴对electron-hole recombination 电子-空穴复合electron hologram 电子全息术electron transition 电子跃迁electron pair 电子对electron pair tunneling 电子对隧穿electron-phonon coupling 电子声子耦合electron temperature,电子温度electron tunneling 电子隧穿electron waveguide,电子波导electron volt (eV) 电子伏electrorheological effect 电流变效应electrorheological fluid 电流变液Eliashberg equations Eliashberg方程Eliashberg theory of strong coupling Eliashberg强耦合理论elliptical orbit 椭圆轨道elliptic flow 椭圆流emittance 发射度empirical pseudopotential method 经验赝势方法empty lattice approximation 空晶格近似endohedral fullerene 内嵌原子富勒烯end-butt coupling 端面对接耦合energy relaxation length,能量弛豫长度energy transport velocity 能量传输速度ensemble average,系综平均entangled state 纠缠态entanglement 1,纠缠;2,纠缠度entanglement concentration 纠缠浓缩entanglement measure 纠缠度量entanglement monotone 单调纠缠量entanglement of formation 生成纠缠entanglement purification 纠缠纯化entanglement witness 纠缠见证entropy force 熵力envelope function,包络函数epithermal neutron 超热中子epoxy 环氧树脂erbium-doped fiber amplifier 掺饵光纤放大器error correction 纠错Esaki diode 江崎二极管evanescent state,衰逝态even-odd nucleus 偶奇核even parity 偶宇称evolution of inflation 暴涨演化Ewald construction Ewald作图法Ewald sphere Ewald球excess current 过剩电流excess neutron 过剩中子exchange-correlation hole 交换关联空穴exchange-correlation functional 交换关联泛函exchange hole 交换空穴exchange integral 交换积分excitation spectrum 激发谱excluded volume 排除体积exclusion of flux 磁通排斥exclusion principle 不相容原理exotic nucleus 奇特核expanding universe 膨胀宇宙extended [Brillouin] zone scheme 扩展[布里渊]区图式extraterrestrial life 地外生命extravehicular activity(EV A) [太空]舱外活动f-sum rule f求和规则face-centered orthorhombic lattice 面心正交格[子] face-on 正向facsimile 传真,英文简写为faxfacula 光斑Fahrenheit thermometer 华氏温度计faint object 暗天体fan diagram 扇形图F-center F中心Feno lineshape Feno线型Feno resonance Feno共振fan spin order 扇状自旋有序farad (F) 法拉(电容单位)Faraday depolarization 法拉第退偏振Faraday law of electrolysis 法拉第电解定律far-from-equilibrium system,远离平衡态系统far-side 背面(far-side of the moon, 月球背面)far-ultraviolet (FUV) 远紫外fast fission 快裂变fatigue crack 疲劳裂纹fatigue fracture 疲劳断裂fatigue strength 疲劳强度feed [source] 馈源feeder 馈线femto (f) 飞(=10-15)(01)femtosecond pulse shaping 飞秒脉冲成形Fermi age 费米[中子]年龄Fermi age-diffusion equation 费米年龄扩散方程Fermi arc 费米弧Fermi coupling constant 费米耦合常数Fermi energy 费米能量Fermi gas 费米气体Fermi golden rule 费米黄金定则Fermi liquid 费米液体Fermi liquid parameter 费米液体参数Fermi loop 费米环Fermi point 费米点Fermi transition费米跃迁Fermi vacuum 费米真空Fermi velocity 费米速度Fermi wavelength 费米波长Fermi wave vector,费米波矢Fermi’s golden rule费米黄金规则ferrielectric crystal 亚铁电晶体ferrimagnet 亚铁磁体ferroelectric 铁电体ferroelectric crystal 铁电晶体ferromagnet 铁磁体few-cycle pulse少周[期]脉冲few nucleon transfer 少[数]核子转移Feynman path,费曼路径Feynman path integral,费曼路径积分fiber cross connect 光纤交叉连接fiber grating 光纤光栅Fibonacci sequence 斐波那契序列fiducial confidence bar 置信棒fiducial point 基准点field intensity 场强field quantization 场量子化field quantum 场量子field strength 场强figure of merit,又称qualityfactor 品质因数filament 1,丝;2,丝极finite-amplitude wave 有限振幅波,又称大振幅波finite-difference method 有限差分方法finite element method 有限元法finite size effect 有限尺寸效应finite-size scaling 有限尺寸标度first approximation 一级近似first Brillouin zone 第一布里渊区first point of Aries 春分点,英文又称:vernal equinoxfirst point of Cancer 夏至点,英文又称:summer solsticefirst point of Capricornus 冬至点,英文又称:winter solsticefirst point of Libra 秋分点,英文又称:autumnal equinoxFiske steps 费斯克台阶,又称自感应台阶fissility 易裂变性fission 1,裂变;2,分裂fission isomer 裂变同质异能素fission nuclide 裂变核素fission reactor 裂变反应堆fission-spectrum neutron 裂变谱中子fission track dating 裂变径迹年代测定fitting curve 拟合曲线five-fold symmetry 5重对称fixed-range hopping 定程跳跃flash memory 闪速存储器,简称闪存flat spectrum 平谱flattening factor 扁率floating probe 浮置电极,又称浮置探针floating phase 浮置相Floquest theorem 弗洛开定理flow resistance 流阻fluctuating wall 涨落壁fluctuation 涨落(统计物理〕,又称起伏(声学〕fluence 注量fluorescence probe 荧光探剂flux,通量flux 1通量,又称流量;2,注量率;3,焊料;4 助熔剂flux bundle 磁通束flux flow amplifier (FFA) 磁通流放大器flux flow oscillator (FFO) 磁通流振荡器flux flow transistor(FFT)磁通流三极管,又称涡旋流三极管(vortex flow transistor) flux-line lattice 磁通线格子flux line 磁通线flux tube 磁流管flux quantum 磁通量子flux quantization 磁通量子化foam 泡沫focal point 焦点focal ratio 焦比focus 1,焦点;2,震源folding Brillouin zone 折叠布里渊区forbidden beta decay 禁戒b衰变forecast 预报forward bias 正向偏压four-Josephson junction logic (4JL) 四约瑟夫森结逻辑门Fourier analysis 傅里叶分析Fourier transform 傅里叶变换Fourier [transform] nuclear magnetic resonance 傅里叶[变换]核磁共振Fourier [transform] Raman spectroscopy 傅立叶[变换]拉曼谱学four probe method 四探针法four-terminal resistance,4端电阻fractional chain yield 相对链产额fractional cumulative yield 分积累产额fractional distillation 分馏fractional independent yield 分独立产额fractional statistics 分数统计法fragment 1,碎片;2,片段Franck-Condon principle弗兰克-康登原理free electron approximation 自由电子近似free electron gas 自由电子气体free energy 自由能free –free transition 自由-自由跃迁,又称自由态间跃迁freely falling body 自由落体free radical 自由基free spectral range 自由光谱范围freezing point 凝固点Frenkel exciton 弗仑克尔激子frequency conversion 频率转换Frequency division multiplexing 频分复用frequency jitter 频率抖动frequency multiplication 倍频friction 摩擦Friedel oscillation,Friedel振荡Friedel sum rule Friedel求和规则Frohlich interaction Frohlich相互作用front velocity波前速度frustrated magnet 窘组磁体fuel cell 燃料电池Fulde-Ferrell state Fulde-Ferrell态fullerene 富勒烯full moon 满月function 函数functional (1)泛函(2)功能(的)fundamental interaction 基本相互作用fundamental space-filling mode 基本空间填充模fuse (1)熔解(2)保险丝fused silica熔融石英fusion reactor 聚变[核反应]堆fuzzy information 模糊信息fussy mathematics 模糊数学gain-clamping 增益箝位gain efficiency 增益效率Galton plate 伽尔顿板-陈gamma(γ)伽马(地磁场强单位γ=nT)gamma rayγ射线gap 1,隙;2,能隙gap anisotropy 能隙各向异性gap parameter 能隙参数gaseous state 气态gate1,门;2,栅(极)gate voltage 门电压gauge symmetry 规范对称性gauss (G) 高斯(磁感应强度单位G=10-4T)Gaussian fluctuation 高斯涨落Gauss law 高斯定理Gauss surface 高斯面generalized Balmer formula 广义巴尔末公式generalized work 广义功general refractive index 广义折射率(量子信息)geomagnetic declination 地磁偏角geomagnetic inclination 地磁倾角geometrical structure factor 几何结构因子geometrization of gravitation 引力几何化German silver 德银g-factor g因子g-factor of electrons 电子的g因子g shift g移位ghost imaging 鬼成像giant magnetoresistance (GMR) 巨磁电阻Giaever tunneling 盖沃尔隧穿(单电(粒)子隧穿)Gibbs ensemble 吉布斯系综gilbert 吉尔(磁通势单位)Ginzburg-Landau coherence length 金兹堡-朗道(GL)相干长度Ginzburg-Landau equation 金兹堡-朗道(GL)方程Ginzburg-Landau-Abrikosov Go’rkov theory(GLAG)金兹堡-朗道-阿布里科索夫-高里科夫理论Glan-Thompson prism 格兰-汤普森棱镜Glan-Taylor prism 格兰-泰勒棱镜glass phase 玻璃相glassy ceramics 微晶玻璃glassy metal 玻璃态金属Glauber state Glauber态glide axis 滑移轴glide line 滑移线global phase 整体相位(量子信息)goniometer 测角器graded bandgap layer 缓变带隙层Gorter-Casimir two-fluid model 高特-卡西米尔二流体模型Graded index lens (GRIN) 梯度折射率透镜gradient of electric potential 电势梯度gram-molecule 克分子,摩尔(mole)grand free energy 巨自由能granular matter 颗粒物质granular superconductor 颗粒超导体granule 颗粒granularity 颗粒性granular metal 颗粒金属graphite 石墨graphite structure 石墨结构graph [线]图graph state 图态(量子信息)gravitational deflection of light 光线的引力偏折gravity acceleration 重力加速度Gray code 格雷码grazing angle 1,掠射角;2,擦边角greenhouse effect 温室效应group index of refraction 群折射率group theory 群论group velocity dispersion 群速度色散growth 生长growth model 生长模型guest host liquid crystal 宾主型液晶guided wave optics 导波光学gyroscopic effect 回转效应half metal 半金属half metallic magnet 半金属磁体half wave filter 半波滤波器half wave oscillator 半波振子half- wave zone method 半波带法half-wave voltage 半波电压Hall angle 霍尔角Hall coefficient 霍尔系数Hall field 霍尔电场[强度]Hall plateau 霍尔平台Hall resistance 霍尔电阻Hall voltage 霍尔电压halo nucleus 晕核halogen 卤素Hamiltonian matrix哈密顿[量]矩阵hard sphere 硬球hard sphere approximation 硬球近似harmonic generation 谐波产生Hartree-Fock electron 哈特里-福克电子H-center H心health physics 保健物理heat conductivity 1,导热性;2,热导率heat flow vector 热流矢量heat flux 热通量heat switch 热开关heavy electron 重电子heavy element 重元素heavy fermion superconductor 重费米子超导体heavy [fission] fragment 重【裂变】碎片heavy hole 重空穴heavy wall 重壁heavy water 重水hedgehog 猬缺陷height of potential barrier 势垒高度Heisenberg Hamiltonian 海森伯哈密顿量Heisenberg operators 海森伯算符Heisenberg uncertainty principle 海森伯不确定【性】原理Heitler-London theory 海特勒-伦敦理论Helfrich spontaneous curvature model 黑弗里希自发曲率模型helical spin order螺旋自旋有序helium liquefier 氦液化器heptahgedron 七面体Hermite polynomial 厄米多项式Hermitian matrix 厄米矩阵hertz (Hz) 赫兹, 频率单位heterotic superstring theory 杂化超弦理论Heusler alloy 霍伊斯勒合金hexadecapole 十六极hexahedron 六面体hexatic phase 六角相high coherence model 高相干模型high electron mobility transistor 高电子迁移率晶体管(简写:HEMT)high energy particle 高能粒子high-field domain 强场畴high-order dispersion 高阶色散high-order harmonic generation 高阶谐波产生high pass filter 高通滤波器high temperature reservoir 高温热源high temperature superconductor(HTS)高温超导体high vacuum 高真空high voltage electron microscopy 高压电子显微术Hohenberg-Kohn energy functional 霍恩伯格-科恩能量泛函hole-electron recombination 空穴-电子复合hole surface 空穴面(k空间中未占据态区的表面)hole-type high temperature superconductor 空穴型高温超导体holey fiber 多孔光纤hollow core optical fibers 空心光纤holon 空穴子homodyne零拍homodyne detection 零拍探测homolog[ue] 同系物homopolymer 单聚合物honeycomb photonic band gap fiber 蜂窝型光子带隙光纤hopping conductance 跳跃电导hopping energy,跳跃能hopping probability 跳跃概率hopping transport 跳跃输运host 基质host crystal 基质晶体,又称主晶hot carrier 热载流子h/e oscillation h/e振荡h/2e oscillation h/2e振荡Huang equations 黄[昆]方程组Huang-Rhys factor 黄昆-里斯因子Hubbard Hamiltonian 哈勃德哈密顿量Hubbard model 哈勃德模型Hubble time 哈勃时间hybrid bond 杂化键hybrid field effect 混合场效应hydrodynamics 流体[动]力学hydrodynamic mode 流体[动]力学模hydromagnetic disturbance 磁流体扰动hydromagnetic instability 磁流体不稳定性hydrophilic force 亲水力hydrophobic association 疏水缔合hydrophobic force 疏水力hyperbolic point 双曲点hypernucleus 超核hyper-Rayleigh scattering 超瑞利散射hyperspherical coordinate 超球座标hysteresis loop 1,滞后回线;2,磁滞回线hysteresis loss 1,滞后损失;2,磁滞损耗。
巨磁电阻效应的英语

巨磁电阻效应的英语Giant magnetoresistance effect, huh? That's a mouthful! But let's break it down. Basically, it's this crazy phenomenon where the resistance of certain materials changes significantly when a magnetic field is applied.It's like they're super sensitive to magnets.Now, imagine this: you've got a material and you give it a little magnetic push. Suddenly, its resistance to electricity goes up or down by a huge amount. That's what we call giant magnetoresistance. And it's not just anylittle change; it's huge!One of the coolest things about this effect is how it's being used in tech. You know, like in those tiny sensors that can detect magnetic fields with incredible precision? They rely on this effect to work. It's like having a superpower to sense magnetic fields.And speaking of superpowers, imagine if we couldharness this effect for even more amazing things. Like, controlling robots with just our thoughts or something crazy like that. The possibilities are endless, really.So, in a nutshell, giant magnetoresistance is this fascinating effect where materials change their resistance a lot when you apply a magnetic field. It's not just a science experiment; it's shaping the future of technology in ways we can only imagine.。
Ballistic electron transport in a nanostructure under

Ballistic electron transport in a nanostructure under the in fluence of magnetic barriers and d -dopingJian-Duo Lu a ,b ,*,Lin-Yi a ,Yun-Bao Li b ,Yu-Hua Wang b ,Yang-Lai Hou ba Department of Physics,Huazhong University of Science and Technology,Wuhan 430074,ChinabHubei Province Key Laboratory of Systems Science in Metallurgical Process,Wuhan University of Science and Technology,Wuhan 430081,Chinaa r t i c l e i n f oArticle history:Received 7October 2010Accepted 22June 2011Keywords:Magnetic barriers d -DopingSpin-polarizationa b s t r a c tThe electron transport properties are theoretically investigated in a nanostructure under the in fluence of magnetic barriers and the d -doping.The resulting transmission and spin polarization are strongly dependent on the weight of d -doping.It is shown that the large spin polarization can be achieved due to the remarkable discrepancy in the transmission for electrons with opposite spin orientations.It is also shown that both the transmission probability and the spin polarization periodically change with the increase of L .These interesting features will be more helpful for developing new types of spintronic devices.Ó2011Elsevier Ltd.All rights reserved.1.IntroductionThere has been much research interest in the spin and charge transport properties in semiconductors [1e 8],due to the feasibility of spin polarization and spin filtering within a two-dimensional electron gas (2DEG)which was proposed by Papp and Peeters [9,10]based on the combination of hybrid magnetic-electric barrier structure.However,as the previous efforts depend on spin injection into a semiconductor from either ferromagnetic metal or magnetic semiconductor,the ef ficiency of spin injection is disappointingly small due to the large conductivity mismatch [11].Therefore,in order to obtain the large spin polarization,one must try to find the new method of spin injection.Recently,attention has been shifted to another type of spintronic devices,which can signi ficantly enhance the spin injection ef fi-ciencies and could be developed through the so-called d -doping or atomic layer doping.For instance,many electron resonant tunneling devices [12e 15]have been developed with a d -doped single barrier,double-barriers with d -doping in barriers or wells,as well as multi-barrier structures with d -doping in barriers or wells,where the electron transport of a device could be tailored to the speci fic application through adjusting the weight or the position of d -doping.Therefore,in this work,we theoretically study the electron transport in a magnetic nanostructure under the in fluence of d -doping.The detailed-numerical results show that both the trans-mission probability and the electron conductance evidentlydecrease with the increase of the weight of d -doping,but the spin polarization drastically increases.We also find that the trans-mission probability and the spin polarization both show a periodic pro file with the increase of L .Thus,a large and tunable spin polarized electron transmission can be achieved through the device,which is desirable for future spintronic applications.2.Theoretical method and formulasWe consider the geometry as shown in Fig.1:It is essentially a 2DEG in the xy plane modulated by an perpendicular inhomo-geneous magnetic field in the z direction,which may be realized via the Meissner effect of a superconductor on the top of 2DEG [16]or by depositing ferromagnetic (FM)stripes on the top and bottom of a semiconductor heterostructure [17,18].For simplicity,the magnetic field pro file we consider is of d -function type,and it can be expressed as B ¼Bz (x )z with B z(x )¼B 1d (x )þB 2d (x e a e b )þB 3d (x e a e b e L )þB 4d (x e 2a e 2b e L ),where B 1,B 2,B 3and B 4are the strengths of the magnetic fields,L denotes the separation between the magnetic fields B 2and B 3.Now we consider two d -function potentials:u 1(x )¼u 1d (x e a )and u 2(x )¼u 2d (x e 2a e b e L ),where the symbols u 1and u 2give the weights of d -function potentials.In the framework of single particle effective mass approxima-tion,the Hamiltonian within such a system can be given byH ¼12m *½p þeA ðx Þ 2þeg *0s Z B z ðx Þ;(1)where m 0is the free electron mass,m *is the electron effectivemass,g *is the effective Lande factor,p is the momentum of the*Corresponding author.Hubei Province Key Laboratory of Systems Science in Metallurgical Process,Wuhan University of Science and Technology,Wuhan 430081,China.E-mail address:l_j316@ (J.-D.Lu).Contents lists available at ScienceDirectVacuumjournal ho mep age:/lo cate/vacuum0042-207X/$e see front matter Ó2011Elsevier Ltd.All rights reserved.doi:10.1016/j.vacuum.2011.06.021Vacuum 86(2011)299e 302electron,s ¼þ1/e 1is for spin up/down electron,and A (x )¼[0,A (x ),0]is the magnetic vector potential given in the Landau gauge.Here for convenience,we express all quantities in dimensionless units by introducing the electron cyclonic frequencyu c ¼e B 0/m *and the magnetic length l B ¼ffiffiffiffiffiffiffiffiffiffiffiffiffih =eB 0p with B 0as some typical magnetic field:(1)the coordinate r /l B r ;(2)the weight ofthe d -function potential u 1ð2Þ/Z u cu 1ð2Þ;(3)the energyE /Z u c E ð¼E 0E Þ;(4)the magnetic field B z ðx Þ/B 0B z ðx Þ;and (5)the vector potential A ðx Þ/B 0l B A ðx Þ:For GaAs and an estimated B 0¼0.1T,we have l B ¼813Å,Z u c ¼0.17meV,and g *¼0.44.Since the system is translation invariant along the y direction,the total electronic wave-function can be written as J left(x ,y )¼e ikyy (e ikleftx þg e e ikleftx ),x <0and J right(x ,y )¼s e ikyy e ikrightx ,x >2(a þb )þL ,where g /s denotes the re flection/transmission amplitude.Therefore,we can obtain the potentials-dependent transmission probability for incident electron with energy E ,wave vector k y,and spin orientation s byT ÀE ;k y ;s ;u 1;u 2Á¼k right k leftj s j 2:(2)When the electron transmission probability is obtained,the conductance G s can be calculated from the well-known Landauer-Buttiker formula [19]:G s ¼G 02Zp =2Àp =2T E F ;ffiffiffiffiffiffiffiffi2E F p sin f ;s ;u 1;u 2 cos ðf Þd f ;(3)where f is incident angle relative to transport direction,E F is the Fermi energy of 2DEG,and G 0¼e 2m *y F Ly /Z 2is the reduced unit of conductance with electron Fermi velocity y F and length L y of the barrier structure in the y -direction.The electron-spin polarization effect can be evaluated by calculating the polarization of the transmission probability,de fined as P T ¼(T þ1e T À1)/(T þ1þT À1),or by considering the difference P G ¼(G þe G e )/(G þþG e ),here T þ1and T À1are the transmission properties of electrons with spin-up and spin-down,respectively,while G þand G e are the conductance for spin-up and spin-down electrons,respectively,and P G expresses the relative spin conduc-tance excess at the Fermi energy,i.e.,for zero temperature.3.Numerical results and discussionsIn Fig.2,we show schematically the spin-resolved trans-mission probability and the spin polarization as a function of incident energy for the different weights of d -function potential.From the figure,it can be clearly seen that,the threshold energy of transmission obviously increases with the increase of the weight of d -function potential,and all spectra of transmission display the pronounced oscillation with the increasing energy.This can be ascribed to the presence of quasibound state above the quantum barrier or well induced by magnetic suppression and the suppression of d -function potential.It also can be clearly seen that,Fig.1.Schematic illustration of the nanostructure modulated by the magnetic field and the d -function potential.Here,we choose a ¼b ¼0.5,B 1¼e B 4¼1and B 2¼e B 3¼2.0.00.20.40.60.81.0T r a n s m i s s i o n p r o b a b i l i t y51015200.00.20.40.60.8Electron energy (E/E 0)T r a n s m i s s i o n p r o b a b i l i t y5101520−1.0−0.50.00.5Electron energy (E/E 0)P o l a r i z a t i o n (P T)0.00.20.40.60.81.0T r a n s m i s s i o n p r o b a b i l i t yu1=−u2=1 u1=−u2=3u1=−u2=5k y =1 L=2 σ=1 σ=−1u1=−u2=1 u1=−u2=3 u1=−u2=5acdbFig.2.The transmission probability and the spin polarization P T as a function of E /E 0for the different weights of d -function potential.J.-D.Lu et al./Vacuum 86(2011)299e 302300with the increase of the weight,transmissions of spin-up andspin-down electrons both greatly decrease,in other words,the electron transmission is more greatly suppressed.Particularly,there exists a more remarkable discrepancy in the transmission for electrons with opposite spin orientations with the weight increasing.This indicates that there is the evident existence of spin polarization in the considered structure and the degree of spin polarization obviously depends on the weight.This can be interpreted as the presence of the Zeeman coupling or the spin e field interaction,i.e.,the second term in Eq.(1).Thischaracter can be seen more clearly from the spin polarization of transmitted beam as shown in Fig.2(d).Obviously,with the elevating electron energy,there is a rapid reduction in the amplitude of oscillatory transmission polarization as a conse-quence of the finite weight of d -function potential,the modulation of which are weakened for large energy.With the increase of the weight,the degree of spin polarization apparently increases and the peaks shift leftwards.In order to see more clearly the spin-dependent effect,the electron transmission probabilities and the spin polarization as0.60.70.80.91.0T r a n s m i s s i o n p r o b a b i l i t y246810120.00.20.40.60.8LT r a n s m i s s i o n p r o b a b i l i t y24681012−1.0−0.50.00.5LP o l a r i z a t i o n (P T )0.00.20.40.60.81.0T r a n s m i s s i o n p r o b a b i l i t yu1=−u2=1u1=−u2=3−u2=5σ=1 σ=−1 E/E 0=6 k y =1u1=−u2=1 u1=−u2=3 u1=−u2=5 cdbau1=Fig.3.The transmission probability and the spin polarization P T as a function of L for the different weights of d -function potential.0.00.51.01.52.0E l e c t r o n c o n d u c t a n c e (2G σ/G 0)51015200.00.20.40.60.81.01.2Fermi energy (E F/E 0)E l e c t r o n c o n d u c t a n c e (2G σ/G 0)5101520−1.0−0.50.00.5Fermi energy (E F/E 0)P o l a r i z a t i o n (P G )0.00.20.40.60.81.0E l e c t r o n c o n d u c t a n c e (2G σ/G 0)u1=−u2=1u1=−u2=3u1=−u2=5L=2 σ=1 σ=−1u1=−u2=1 u1=−u2=3 u1=−u2=5acbdFig.4.The electron conductance and the spin polarization P G for the different weights of d -function potential.J.-D.Lu et al./Vacuum 86(2011)299e 302301a function of L are shown in Fig.3.It is shown that,with the increase of the weight the electron transmission is more greatly suppressed and there exists a more remarkable discrepancy in the transmission for electrons with opposite spin orientations.It is also shown that the transmission peak for spin-up electron shifts toward the bigger value of L.In addition,an interesting character can be clearly seen from thefigure that the transmission curve show a periodic profile with the increase of L.This can be generally interpreted as follows. The propagating and reflected waves having the same wavenumber interfere with each other.When the phase shift between the inci-dent wave and the reflected wave is just equal to2n p,the trans-mission will be reinforced,and while the phase shift is(2nþ1)p, the transmission will be reduced.The two conditions correspond to the maximum and minimum of the transmission spectra,respec-tively.Consequently,a periodic oscillation appears in the trans-mission profile.This phenomenon also can be found in the spin polarization curve of transmitted beam as plotted in Fig.3(d).We once again see that,with the increase of the weight the degree of spin-polarization obviously increases and the peak shifts leftwards.We have also calculated the electron conductance for the different weights of d-function potential in Fig.4.Despite the averaging of spin-dependent transmission probability over half the Fermi surface,the main feature of the electron transmission,i.e., the spin splitting occurs in conductance of the nanostructure.From thefigure,we can clearly see that,with the increase of the weight the conductance curves for spin-up and spin-down electrons are both drastically suppressed and the degree of their difference is greatly increasing,which could be seen more obviously in conductance polarization spectrum as shown in Fig.4(d).Once again,it can be clearly seen that when the weight increases,the spin polarization effect is obviously enhanced and the peak of spin polarization obviously shifts leftwards,while the spin polarization becomes smaller as the Fermi energy increases.Therefore,we can expect that the desirable spin polarization can be achieved by adjusting the weight of d-function potential or the electron energy. These interesting phenomena will be more useful for under-standing the experimental physical phenomena in d-doping and for making new types of spintronic devices.4.ConclusionIn summary,we have discussed the effect of the weight of d-doping on the electron transport in a magnetic nanostructure.We have shown that the transmission probability,the electron conductance as well as the spin polarization are closely related to the weight of d-doping.We have also shown that both the transmission probability and the spin polarization show a peri-odic profile with the increase of L.Therefore,by means of changing the electron energy or the weight of d-doping,one can easily tailor the electronic tunneling properties of this type of spintronic devices.AcknowledgmentsThis work is supported by Hubei Province Key Laboratory of Systems Science in Metallurgical Process((Wuhan University of Science and Technology),(Grant No.C201018),and the National Natural Science Foundation of China(No.10805035).References[1]Awschalom DD,Flatte ME.Nat Phys2007;3:153.[2]Zutic I,Fabian J,Sarma SD.Rev Mod Phys2004;76:323.[3]Lu mun Theor Phys2008;49:783.[4]Jalil MBA.J Appl Phys2005;97:024507.[5]Lu JD.Solid State Commun2008;145:271.[6]Liu JF,Deng WJ,Xia K,Zhang C,Ma ZS.Phys Rev B2006;73:155309.[7]Song JF,Bird JP,Ochiai Y.Appl Phys Lett2005;86:062106.[8]Tan SG,Jalil MBA,Liew T.Phys Rev B2005;27:205337.[9]Papp G,Peeters FM.Appl Phys Lett2001;78:2184.[10]Papp G,Peeters FM.Appl Phys Lett2001;79:3198.[11]Zhai F,Xu HQ.Phys Rev Lett2005;94:246601.[12]Xu HZ,Yan QQ,Wang TM.Phys Lett A2007;368:324.[13]El Boudouti EH,Djafari-Rouhani B,Akjouj A,Dobrzynski L,Kucharczyk R,Steslicka M.Phys Rev B1997;56:9603.[14]Lu JD.Appl Surf Sci2009;255:7348.[15]Xu HZ,Shi Z.Phys Rev B2004;69:237201.[16]Seo KC,Ihm G,Ahn KH,Lee SJ.J Appl Phys2004;95:7252.[17]Jiang Y,Jalil MBA,Low TS.Appl Phys Lett2002;80:1673.[18]Lu MW,Yang GJ.Phys Lett A2007;362:489.[19]Buttiker M.Phys Rev Lett1986;57:1761.J.-D.Lu et al./Vacuum86(2011)299e302 302。
Basic Properties of Magnetic Materials:磁性材料的基本性质

Name(s)___________________ Basic Properties of Magnetic MaterialsEquipment NeededWasher and various metals, compass, two bar magnetsIntroductionWe will qualitatively study some of the basic properties of magnetic materials.Permanent magnets are materials that retain their magnetic properties for a long time. Materials which can be used to make permanent magnets are called hard magnetic materials. Some magnetic materials are naturally occurring. For example lodestone is composed of magnetite, an iron-bearing mineral and is a naturally occurring permanent magnet. Synthetic magnetic materials which are used to make permanent magnets are usually alnicos: iron alloys containing aluminum, nickel, and cobalt. Some permanent magnets are ferrites made of powdered iron oxide and barium/strontium carbonate ceramics. Permanent magnets generally are described as having north and south poles. When permanent magnets are brought near each other, like poles repel and opposite poles attract.Temporary magnets only act as magnets if they are in the presence of a magnetic field produced by a permanent magnet or an electric current. Magnetic materials from which temporary magnets are made are called soft magnetic materials. Any object that can be lifted or moved by a magnet is a temporary magnet. Objects such as these will eventually lose their magnetism once the permanent magnet is removed. Sometimes the object may retain weak magnetic properties.Non magnetic materials are materials that do not exhibit magnetic properties in the presence of a magnetic field. Pure aluminum is a metal that is non-magnetic. All non-metallic materials are also non-magnetic.Magnetic domains are clusters of aligned atoms in a material.In iron, for example, a magnetized atom will likely cause its neighbors to line up in the same direction, forming a larger field. This forms magnetic domains. The more aligned the domains are, the stronger the magnetic field.ExplorationTemporary magnetsMaterials which are always attracted to a magnet are known as temporary magnets.1. Bring a compass near a washer. Does the compass needle deflect? Does the washer seem to be a magnet?NOTE: If the washer seems to be magnetized, bang it or drop it several times and test it again. What happens?2. Now use a permanent magnet instead of the compass. Bring the metal washer near the North Pole of the magnet. What do you observe?3. Flip the washer over and bring it near the North Pole of the magnet. What do you observe?4. Does the washer always seem to be attracted to the magnet?Non magnetic materialsMaterials that do not exhibit magnetic properties are known as non-magnetic materials.5. Bring the North Pole of the compass near a brass ball. Does the compass needle deflect?6. Bring the South Pole of the compass near the brass ball. Does the compass needle deflect?7. Now use a permanent magnet instead of the compass. Bring the brass ball near the North Pole of the magnet. What do you observe?8. Based on these observations, does the brass ball appear to be a permanent magnet, a temporary magnet, or non magnetic? Explain.Classification of magnetic materials9. Classify the US nickel, the steel ball, the aluminum ball and one other metallic object of your choice as permanent magnets, temporary magnets, or non-magnets. List the observations you’ve made in order to arrive at this classification.Permanent magnets and two types of poles10. Take two permanent magnets. Bring the two North Pole sides together. What do you observe?11. Bring the two South Pole sides together. What do you observe?12. Bring a North Pole side towards the South Pole side. What do you observe?13. Bring the North Pole side of a magnet near a compass. How does the compass behave?14. Bring the South Pole near the compass. How does the compass behave?15. Explain how these observations demonstrate that the compass is a permanent magnet rather than just a piece of iron.Earth’s magnetic field16. Identify geographic North in the lab room. Which side of the compass needle points north? We define the pole of the compass that faces geographic north to be the “magnetic North” pole of the compass and the pole that faces geographic south to be the “magnetic South” pole of the compass. Given your observations about the behavior of the magnetic forces between like and opposite poles, indicate on the sketch below the magnetic North Pole of the Earth and magnetic South Pole of the Earth. Is the geographic North pole a magnetic North pole or a magnetic South pole? Explain.Paper clip fun!17. Use your permanent magnet and put one end of a paperclip on the magnet. Then try to hang as many additional paperclips as you can end-to-end from that first paperclip. How many were you able to attach?18. Use the concept of magnetic domains to explain why the paper clips stick to each other. Draw a diagram showing how the domains might look before and after the paper clips are attached to the magnet.19. Remove the paper clips from the magnet. Try to pick up other paperclips with the ones that were attached to the magnet. What happens? Explain.20. Try to demagnetize the paperclips by dropping or banging them. Do they pick up other paperclips after you do this? Can you re-magnetize them? Explain what is happening in the inside of the paperclips to cause them to demagnetize and re-magnetize.。
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arXiv:cond-mat/0405433v1 [cond-mat.mtrl-sci] 19 May 2004
2
The scattering-based approach for calculating the ballistic conductance of open quantum systems is generalized to deal with magnetic transition metals as described by ultrasoft pseudo-potentials. As an application we present quantum-mechanical conductance calculations for monatomic Co and Ni nanowires with a magnetization reversal. We find that in both Co and Ni nanowires, at the Fermi energy, the conductance of d electrons is blocked by a magnetization reversal, while the s states (one per spin) are perfectly transmitted. d electrons have a non-vanishing transmission in a small energy window below the Fermi level. Here, transmission is larger in Ni than in Co.
PACS numbers: 73.63.-b, 75.47.Jn, 72.15.-v, 71.15.-m
I. INTRODUCTION
Understanding electron conduction through atomic and molecular wires connecting two macroscopic electrodes is presently a very active research topic. Conductance measurements for metal nanocontacts display flat plateaus and abrupt drops during the elongation attributed to atomic rearrangements. In noble metals (Cu, Ag, Au) and alkali metals (Li, Na, K) the last conductance step before breaking, most likely corresponding to a monatomic nanocontact or a nanowire, has a value 2G0 [1] (G0 = e2 /h is the conductance quantum per spin) which can be rationalized with the free propagation of 2 valence s-electrons (one per each spin). For magnetic transition metals such as Co and Ni the experimental data are less consistent. Oshima et al. [2], who worked in vacuum, at variable temperature, and with the possibility of an external magnetic field, found conductance steps in Ni nanocontacts preferentially near 2G0 and 4G0 at room temperature (RT) and zero field, near 4G0 at 770 K and zero field, and near 3G0 (occasionally near G0 ) at RT with a field. Ono et al. [3] reported again 2G0 for Ni in zero field, and G0 for Ni in a field. Recently, Rodrigues et al. [4] observed 1 conductance quantum at RT and zero field in a Co atomic chain. Ruitenbeek and collaborators [5] finally obtained low temperature zero field data on a variety of magnetic metals, and reported a dominance of conductance steps between 2G0 and 3G0 in Co and Ni. Despite the poor agreement between these results it is clear that the last conductance step is anomalously small with respect to the number of valence electrons determining the number of conducting channels, since in Co and Ni there are many d bands crossing the Fermi level. Several theoretical methods are available to study the transport properties of atomic scale conductors, each of them tailored to the underlying electronic structure
scheme [6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16]. Among these are methods based on nonequilibrium Green’s functions combined with a localized basis set [6, 7, 8] or with a system-independent wavelet basis set [9, 10]. A scattering approach for conductance calculation has been applied by Lang and co-workers [11], and Tsukada and coworkers [12] using the jellium model for the electrodes. A formulation based on the real-space finite-difference approach has been recently proposed and applied to calculate conductance of gold and aluminum nanowires [13]. Recently, the KKR method using the Baranger and Stone’s formulation of the ballistic transport has been presented [15]. In order to deal with magnetic transition metals nanowires, we need a formulation capable of handling accurately the rather localized 3d electrons. The approach to the problem of d electrons based on Vanderbilt ultrasoft pseudo-potentials (US-PPs) [17] has gained widespread use in recent years. These PPs allow the accurate and efficient description of large-scale systems, while mantaining all the advantages of a plane waves basis set. We already applied US-PPs to several electronic structure and nanowire problems [18]. Recently, Choi and Ihm [19] presented a method based on plane waves to solve the tip-nanocontact-tip electron scattering problem in real atomic contacts and calculate from that the ballistic conductance of open quantum systems via the Landauer-B¨ uttiker formula. Their approach was originally formulated with norm-conserving (NC-PPs) Kleinman-Bylander-type pseudo-potentials; but that is not very suitable for the localized d electrons. In the present paper a generalization of this method to US-PPs is presented. As we shall show, it turns out that the solution of the scattering problem is not more difficult with US-PPs than with NC-PPs, while the calculation of the transmission coefficient requires a generalization of the expression for the probability current carried by