TXC晶体晶振 产品手册
晶振简介（OCXO恒温、
晶振简介（OCXO恒温、 MCXO数补、VCXO压控、VCTCXO、VCOCXO）各种晶振简介1. 普通晶振Packaged Crystal Oscillator（PXO）：是⼀种没有采取温度补偿措施的晶体振荡器，在整个温度范围内，晶振的频率稳定度取决于其内部所⽤晶体的性能，频率稳定度在10-5量级，⼀般⽤于普通场所作为本振源或中间信号，是晶振中最廉价的产品。
2. 温补晶振Temperature Compensated Crystal Oscillator（TCXO）：是在晶振内部采取了对晶体频率温度特性进⾏补偿，以达到在宽温温度范围内满⾜稳定度要求的晶体振荡器。
⼀般模拟式温补晶振采⽤热敏补偿⽹络。
补偿后频率稳定度在10-7~10-6量级，由于其良好的开机特性、优越的性能价格⽐及功耗低、体积⼩、环境适应性较强等多⽅⾯优点，因⽽获⾏了⼴泛应⽤。
3. 压控晶振Voltage Controlled Crystal Oscillator（VCXO）：是⼀种可通过调整外加电压使晶振输出频率随之改变的晶体振荡器，主要⽤于锁相环路或频率微调。
压控晶振的频率控制范围及线性度主要取决于电路所⽤变容⼆极管及晶体参数两者的组合 4. 恒温晶振Oven Controlled Crystal Oscillator（OCXO）：采⽤精密控温，使电路元件及晶体⼯作在晶体的零温度系数点的温度上。
中精度产品频率稳定度为10-7~10-8，⾼精度产品频率稳定度在10-9量级以上。
主要⽤作频率源或标准信号 5. 电压控制－温补晶体振荡器（VCTCXO）温度补偿晶体振荡器和电压控制晶体振荡器结合。
6. 电压控制－恒温晶体振荡器（VCOCXO）恒温晶体振荡器和电压控制晶体振荡器结合。
晶振的应⽤：晶体振荡器被⼴泛应⽤到军、民⽤通信电台，微波通信设备，程控电话交换机，⽆线电综合测试仪，BP机、移动电话发射台，⾼档频率计数器、GPS、卫星通信、遥控移动设备等。
SaRonix NTH NCH Series 晶体时钟振荡器规格书说明书
NTH / NCH SeriesSaRonixCrystal Clock OscillatorTechnical Data3.3V, LVCMOS / HCMOS, Tri-State/saronixDS-159 REV DSymmetry:Rise and Fall Times:Logic 0:Logic 1:Load:Period Jitter RMS:0.5 MHz to 106.25 MHzFrequency Stability:Frequency Range:±20, ±25, ±50 or ±100 ppm over all conditions: calibrationtolerance, operating temperature, input voltage change,load change, 30 day aging, shock and vibration.Temperature Range:Operating:Storage:0 to +70°C or -40 to +85°C, See Part Numbering Guide-55 to +125°CSupply Voltage:Recommended Operating: 3.3V ±10%Supply Current:20mA max, 0.5 to 30 MHz25mA max, 30+ to 50 MHz30mA max, 50+ to 80 MHz35mA max, 80+ to 106.25 MHzACTUAL SIZEDescriptionA crystal controlled, low current, lowjitter and high frequency oscillator withprecise rise and fall times demanded innetworking applications. The tri-statefunction on the NTH enables the outputto go high impedance. Device is pack-aged in a 14 or an 8-pin DIP compatibleresistance welded, all metal groundedcase to reduce EMI. True SMD DIL14versions for IR reflow are available, se-lect option "S" in part number builder.See separate data sheet for SMD packagedimensions.Output Drive:45/55% max 0.5 to 70 MHz max40/60% max @ 50% V DD4ns max 0.5 to 50 MHz, 20% to 80% V DD3ns max 50+ to 80 MHz1.5ns max 80+ to 106.25 MHz10% V DD max90% V DD min50 pF, 0.5 to 50 MHz30pF, 50+ to 70 MHz15pF, 70+ to 106.25 MHz8ps maxHCMOSMechanical:Shock:Solderability:Terminal Strength:Vibration:Solvent Resistance:Resistance to Soldering Heat:MIL-STD-883, Method 2002, Condition BMIL-STD-883, Method 2003MIL-STD-883, Method 2004, Conditions A & CMIL-STD-883, Method 2007, Condition AMIL-STD-202, Method 215MIL-STD-202, Method 210, Condition A, B or CEnvironmental:Gross Leak Test:Fine Leak Test:Thermal Shock:Moisture Resistance:MIL-STD-883, Method 1014, Condition CMIL-STD-883, Method 1014, Condition A2MIL-STD-883, Method 1011, Condition AMIL-STD-883, Method 1004Applications & FeaturesADSL, DSLDS3, ES3, E1, STS-1, T1Ethernet Switch, Gigabit EthernetFibre Channel ControllerMPEGNetwork ProcessorsVoice Over Packet32 Bit MicroprocessorsTri-State output on NTHLVCMOS / HCMOS compatibleAvailable up to 106.25 MHz•••••••••••Output WaveformT r T fCMOSLogic 180% V DD50% V DD20% V DDLogic 0SYMMETRYSaRonixSaRonixSaRonixCrystal Clock Oscillator3.3V, LVCMOS / HCMOS,/saronixSaRonixTrue SMD Adaptor - 7.57mm HighSaRonix /saronix。
晶振手册-2015年A版
军用 > 航空航天 > 导航 > 通信 > 测控 > 仪器与设备产品选型手册XO - 晶体振荡器OCXO - 恒温晶体振荡器TCXO - 温补晶体振荡器VCXO - 压控晶体振荡器AVXO - 抗振晶体振荡器MXO - 倍频晶体振荡器PLXO - 锁相晶体振荡器成都世源频控技术有限公司是一家高端射频与微波产品整体解决方案提供商。
公司专注于超低相位噪声、超高稳定度、低功耗及高可靠射频与微波产品的设计、制造、销售以及相关技术服务。
世源频控技术拥有数条射频与微波产品的柔性生产线，针对不同客户的需求进行产品的设计及制造。
在低相位噪声、高稳定度和低功耗等应用场合具有丰富的设计经验和高度的专业知识，目前公司主要产品技术指标及性能处于世界先进水平。
我们的产品：•恒温晶体振荡器(OCXO)• 温补晶体振荡器(TCXO)• 压控晶体振荡器(VCXO)• 抗振晶体振荡器(AVXO)• 倍频晶体振荡器(MXO)•锁相晶体振荡器(PLXO)世源频控技术具有一流的技术开发工具和生产检测设备。
如相位噪声测试仪、信号源分析仪、信号分析仪、高精度频率计、示波器、高低温试验箱、振动试验台及专用自动测试系统等。
领先的设计、先进的生产检测设备以及严格的质量过程控制保证了产品的质量与可靠性，提高了产品的生产效率。
世源频控技术的产品广泛应用于频率源（频率合成器）、同步时钟、电信设备及基站（含无线通信、移动通信设备及卫星通信）、数字交换和无线电测试测量仪器等领域，并为全球的军用、航空航天、仪器仪表、通信设备和卫星导航等行业的企业提供大量的高品质产品及服务。
世源频控技术致力于通过专业的产品及良好的服务，注重客户意见，持续极力为客户提升价值。
1. 恒温晶体振荡器(OCXO)------------------------------------------------------------------第04页~第30页2. 温补晶体振荡器(TCXO)--------------------------------------------------------------------第31页~第41页3. 压控晶体振荡器(VCXO)-------------------------------------------------------------------第42页~第43页FCOX2系列<超高稳定度,超低老化率,50.8mm 50.8mm H mm>-----------------------------------------第05页~第06页 FCOX3系列<极低相位噪声,50.8mm 50.8mm 19.0mm,SMA-F>-----------------------------------------第07页~第08页 FCOX4系列<超低相位噪声,38.1mm 38.1mm 12.7mm>--------------------------------------------------第09页~第10页 FCOX5系列<超低相位噪声,38.1mm 38.1mm 12.7mm>--------------------------------------------------第11页~第12页 FCOX7系列<超低相位噪声,小体积,25.4mm 25.4mm 12.7mm>-----------------------------------------第13页~第14页 FCOX8系列<超低相位噪声,超小体积,20.320.39.7(or 11.4)mm>--------------------------------------第15页~第16页FCOX9系列<极低相位噪声,试验室级应用,74.6344.4525.4mm>--------------------------------------第17页~第18页FCOX10系列<低相位噪声,超小体积,25.415.249.7(or 11.4)mm>--------------------------------------第19页~第20页FCOX12系列<低相位噪声,表面贴,25.522.210.0mm>---------------------------------------------------第21页~第22页FCOX17系列<超低相位噪声,35.4mm 26.7mm 12.7(or 13.6)mm>--------------------------------------第23页~第24页 FCOX18系列<超高稳定度,超低老化率,51.3.0(or 25.4)mm>-----------------------------------第25页~第26页 FCOX101系列<超低功耗,超小体积,低相位噪声,插件,21.013.6.5mm>------------------------------第27页~第28页FCOX102系列<超低功耗,超小体积,低相位噪声,表面贴,25.415.24.7mm>-------------------------第29页~第30页FCTX8系列<超低相位噪声,20.3mm 20.3mm 9.7(or 11.4)mm>------------------------------------------第32页~第33页 FCTX9系列<超低相位噪声,25.4mm 15.24mm 9.7(or 11.4)mm>----------------------------------------第34页~第35页 FCTX10系列<超低相位噪声,表面贴,27.4mm 17.8mm 5.9mm>-----------------------------------------第36页~第37页 FCTX12系列<超低相位噪声,表面贴,25.5mm 22.2mm 6.7mm>-----------------------------------------第38页~第39页 FCTX13系列<低相位噪声,超小体积,表面贴,17.014.0 6.0mm>-----------------------------------------第40页~第41页FCVX3系列<低相位噪声,表面贴,27.4mm 17.8mm 5.9mm>---------------------------------------------第42页~第43页×××××××××××××××××××××41.3×19××8××8××××××××××××晶体振荡器QUARTZ CRYSTAL OSCILLATOR5. 倍频晶体振荡器(MXO)---------------------------------------------------------------------第51页~第55页MXO4系列<极低相位噪声,极低杂散,50.0mm 50.0mm mm>-------------------------------------------第52页~第53页MXO7系列<双路输出,低相位噪声,低杂散,50.8mm 50.8mm mm>------------------------------------第54页~第55页××H ××H 倍频晶体振荡器MULTIPLIED CRYSTAL OSCILLATOR4. 抗振晶体振荡器(AVXO)-------------------------------------------------------------------第44页~第50页AVXO3系列<抗振设计,优秀动态相位噪声,38.138.119.0(or 16.0)mm>-------------------------------第45页~第46页 AVXO4系列<抗振设计,优秀动态相位噪声,38.138.119.0(or 16.0)mm>-------------------------------第47页~第48页 AVXO6系列<抗振设计,卓越动态相位噪声,50.850.827.0mm>-----------------------------------------第49页~第50页××××××抗振晶体振荡器ANTI-VIBRATION CRYSTAL OSCILLATORNEW ！NEW ！NEW ！NEW ！6. 锁相晶体振荡器(PLXO)----------------------------------------------------------------第56页~第60页PLXO1系列<内置PLL,极低相位噪声,50.8mm 50.8mm 19.0mm,SMA>----------------------------第57页~第58页 PLXO2系列<内置PLL,小体积,低相位噪声,35.4mm 26.7mm 12.7mm>----------------------------第59页~第60页××××锁相晶体振荡器PHASE LOCKED CRYSTAL OSCILLATOR7. 客户订货信息表---------------------------------------------------------------------------------第61页客户订货信息表8. 新产品发布专栏--------------------------------------------------------------------------------第62页新产品发布专栏---NEW PRODUCTS RELEASE敬请关注!-恒温晶体振荡器<OVEN CONTROLLED CRYSTAL OSCILLATOR>超短预热时间FCOX350.8mm X 50.8mm X19.1mmFCOX17FCOX7FCOX8FCOX10FCOX10121.0X13.6X8.5mmFCOX10225.4X15.24X8.7mmNEW ！NEW ！NEW！FCOX12NEW ！OCXOFCOX2产品数据手册 Rev A电性能参数输出信号(客户定义)标称频率 5~20MHz 输出波形 正弦波或方波输出功率,正弦波 0~+13.0dBm 初始频率准确度 ±0.05~±0.3ppm 谐波,正弦波 -30dBc max.杂波,正弦波 -70dBc max.相位噪声(客户定义)OSC @ 10MHz@1Hz -85~-110dBc/Hz @10Hz -110~-140dBc/Hz @100Hz -135~-155dBc/Hz @1KHz -145~-165dBc/Hz @10KHz -150~-166dBc/Hz @100KHz -150~-168dBc/Hz @1MHz -150~-168dBc/Hz稳定度(客户定义)温度稳定度 ±短期稳定度 ±1E-10~±5E-13/s 老化率 ±1E-7~±1E-8/y50~±0.1ppb 电源电压(客户定义)工作电压 +5.0V 或+12.0V 或+15.0V 最大工作电流 500~1500mA max.稳定工作电流 200~700mA max.预热特性 1~15分钟，达到±1E-7~±1E-8频率调节(客户定义)频率调节方式 电调节（EFC ）压控电压范围 0~2.5~5.0V 频率牵引范围 ±0.3~±1.0ppm 频率牵引斜率 正输入阻抗 100k Ω min.环境适应性(客户定义)工作温度范围 最宽-55℃~+85℃机械冲击 GJB-360B,方法213,15g,11ms,半正弦温度冲击 GJB-360B,方法107,-55℃~+85℃,5次2随机振动 GJB-360B,方法214,0.04g /Hz,3个轴向存储温度范围-55℃~+100℃.标签纸，位于产品外壳顶部，包括生产厂家标识、产品型号、标称频率、序列号、生产日期等信息。
txc贴片无源晶振 3225晶振 7M12000039规格书
(1) TXC requires one copy returned with signature and title of authorized individual that signifies acceptanceof the attached specifications.(2) Orders received and accepted by TXC after return of signed copy of specification will be produced perthese specifications.(3) Any changes to these specifications must be agreed upon by both parties and new revision of theProduct Specification Sheet will be issued.(4) Any issuance of purchase order prior to consigning back the Approval page of "Specification Sheets"from customers will be regarded as the agreement on the contents of these specifications.Attachment: Product Specification Sheet12345CUSTOMER SIGNATURE & DateDATE:PM / SALES :CUSTOMER P/N :REVISION :A9TXC P/N:7M12000039NOMINAL FREQ.:12.000000MHz PRODUCT TYPE :SMD SEAM SEALING X'TAL 3.2×2.5RoHS CompliantTEL : 886-2-2894-1202 , 886-2-2895-2201 FAX : 886-2-2894-1206 , 886-2-2895-6207 SPECIFICATION FOR APPROVALCUSTOMER :TEL : 886-2-2894-1202 , 886-2-2895-2201 FAX : 886-2-2894-1206 , 886-2-2895-6207 25-May-09A82ECN-08P123001A93,4ECN-09P052503RevRevise pageRevise contentsDateRef.No.A1N/A ReviserInitial released7-Nov-07N/AYachuan MiaoYachuan Miao Package Change25-May-09Yachuan MiaoRr Change: 200 ohm to 100 ohm 30-Dec-08ELECTRICAL SPECIFICATIONSStandard atmospheric conditionsUnless otherwise specified, the standard range of atmospheric conditions for making measurement and tests are as follow:Ambient temperature :25±5 Relative humidity:40%~70%If there is any doubt about the results, measurement shall be made within the following limits:Ambient temperature :25±3 Relative humidity :40%~70%Measure equipmentElectrical characteristics measured by HP E5100A or equivalent.Crystal cutting typeThe crystal is using AT CUT (thickness shear mode). Unit Weight: 0.018±0.001 g/pcs1Nominal Frequency 2Oscillation Mode 3Load Capacitance 4Frequency Tolerance 5Frequency Stability 6Operating Temperature 7Aging 8Drive Level9Effective Resistance Rr 10Shunt Capacitance C011Insulation Resistance 12Storage Temperature Range--30~85at 25 ± 3±20ppm Over Operating Temp. Range (Reference 25 )ppm -ParametersSYM.Electrical Spec.MINTYPE MAXUNITS -±20--FundamentalMHz CL 18pF -Notes FL 12.000000-- -1st Year -ppm Ω-DL µW --10-Rr -100-±5--~C0--pF 5M Ω at DC 100V -50085---40。
爱普生(EPSON)高精度晶体振荡器TG5032CCN TG5032SCN规格书
6.0 mA Max. / 8.0 mA Max.
5.0 mA Max.
8.0 mA Max. / 10.0 mA Max.
100 kΩ Min.
100 kΩ Min.
±5 ×10-6 ~ ±10 ×10-6
±5 ×10-6 ~ ±10 ×10-6
, +25 °C
-40 ºC ~ +85 ºC
Load ±10 %
): 40 MHz) 50 MHz) 40 MHz) 50 MHz)
±3.0 ×10-6 Max. (Stratum3 )
±0.01 × 10-6 Max.( +25 °C , 24
)
±0.04 × 10-6 Max.( +25 °C , 24
)
±4.6 × 10-6 Max.
5.0 mA Max. / 6.0 mA Max.
90 % VCC
:15pF
0
―― (
― ― ― ― ― TG5032 C CN 30.720000MHz C B G N N A
)― ― ― ― ― OE
(C: CMOS, S: Clipped sine wave)
―
(C: 3.3 V Typ.)
(B: ±0.28 × 10-6 Max.)
(G: -40 °C ~ +85 °C)
(N: ) VC (A: VC =any, D: VC =1.5 V, E: VC =1.65 V, H: VC =2.5 V, N: )
( :mm)
#4
#3
Marking
#4
(A极 ) ( :mm)
1.10 #3
3.20±0.2
#1
高可靠性混合VCXO晶体振荡器规格说明书
REV DESCRIPTION DATEPREPAPPDG EC20973 7/10/23SMLT/AJOscillator Specification, Hybrid VCXOACMOS, 9x14 mm, J-Lead MOUNT HOLLY SPRINGS, PA 17065 Hi-Rel Standard THE RECORD OF APPROVAL FOR THISDOCUMENT IS MAINTAINED ELECTRONICALLYCODE IDENT NO SIZE DWG. NO.REV1. SCOPE1.1General. This specification defines the design, assembly, and functional evaluation of highreliability, VCXO’s produced by Vectron. Devices delivered to this specification represent the standardized Parts, Materials and Processes (PMP) Program developed, implemented, andcertified for advanced applications and extended environments.1.2Applications Overview. The designs represented by these products were primarily developedfor the MIL-Aerospace community. The lesser Design Pedigrees and Screening Optionsimbedded within DOC206218 bridge the gap between Space and COTS hardware by providing custom hardware with measures of mechanical, assembly and reliability assurance needed for Military or Ruggedized COTS environments.2.APPLICABLE DOCUMENTS2.1Specifications and Standards. The following specifications and standards form a part of thisdocument to the extent specified herein. The issue currently in effect on the date of quotation will be the product baseline, unless otherwise specified. In the event of conflict between thetexts of any references cited herein, the text of this document shall take precedence.MilitaryControlled, General Specification For MIL-PRF-55310 Oscillators,CrystalMicrocircuits, General Specification ForMIL-PRF-38534 HybridStandardsMIL-STD-202 Test Method Standard, Electronic and Electrical Component PartsMIL-STD-883 Test Methods and Procedures for MicroelectronicsOtherDOC206251 Test Specification, DOC206218 Hybrids, Hi-Rel StandardQSP-90100 Quality Systems Manual, VectronDocuments,Materials and Processes, Hi-Rel XOCommonDOC011627 IdentificationSpecificationDOC203982 DPAElectrostatic Discharge PrecautionsforQSP-91502 ProcedureDOC208191 Enhanced Element Evaluation for Space Level Hybrid OscillatorsDOC220429 Packaging Standards, Hi-Rel SeriesREQUIREMENTS3. GENERAL3.1 Classification. All devices delivered to this specification are of hybrid technology conformingto Type 2, Class 2 of MIL-PRF-55310. Primarily developed as a Class S equivalentspecification, options are imbedded within it to also produce Class B, Engineering Model and Ruggedized COTS devices. Devices carry a Class 2 ESDS classification per MIL-PRF-38534.3.2 Item Identification. See paragraph 7.1 for part number configuration.3.3 Absolute Maximum Ratings.a. Supply Voltage Range (V CC): -0.5Vdc to +7.0Vdcb. Storage Temperature Range (T STG): -65°C to +125°Cc. Junction Temperature (T J): +175°Cd. Lead Temperature (soldering, 10 seconds): +300°Ce. Output Source/Sink Current: ±70 mA3.4 Design, Parts, Materials and Processes, Assembly, Inspection and Test.3.4.1 Design. The ruggedized designs implemented for these devices are proven in military andspace applications under extreme environments. The design utilizes a 4-point crystal mount in compliment with Established Reliability (MIL-ER) componentry. When specified, radiationtolerant active devices up to 100krad(Si) (RHA level R) can be included without altering thedevice’s internal topography.3.4.1.1 Design and Configuration Stability. Barring changes to improve performance by reselectingpassive chip component values to offset component tolerances, there will not be fundamental changes to the design or assembly or parts, materials, and processes after first product delivery of that item without notification.3.4.1.2 Environmental Integrity. Designs have passed the environmental qualification levels of MIL-PRF-55310.3.4.2 Prohibited Parts, Materials and Processes. The items listed are prohibited for use in highreliability devices produced to this specification.a. Gold metallization of package elements without a barrier metal.b. Zinc chromate as a finish.c. Cadmium, zinc, or pure tin external or internal to the device.d. Plastic encapsulated semiconductor devices.e. Ultrasonically cleaned electronic parts.f. Heterojunction Bipolar Transistor (HBT) technology.g. ‘getter’ materials3.4.3 Assembly. Manufacturing utilizes standardized procedures, processes, and verificationmethods to produce MIL-PRF-55310 Class S / MIL-PRF-38534 Class K equivalent devices.MIL-PRF-38534 Group B Option 1 in-line inspection is included on radiation hardened partnumbers to further verify lot pedigree. Devices are handled in accordance with Vectrondocument QSP-91502 (Procedure for Electrostatic Discharge Precautions). Elementreplacement will be as specified in MIL-PRF-38534, Rev L.3.4.4 Inspection. The inspection requirements of MIL-PRF-55310 apply to all devices delivered tothis document. Inspection conditions and standards are documented in accordance with theQuality Assurance, ISO-9001 and AS9100 derived, System of QSP-90100.3.4.5 Test. The Screening test matrix of Table 4 is tailored for selectable-combination testing toeliminate costs associated with the development/maintenance of device-specific documentation packages while maintaining performance integrity.3.4.6 Marking. Device marking shall be in accordance with the requirements of MIL-PRF-55310. Inaddition, when devices are identified with laser marking, the Resistance to Solvents testspecified in MIL-PRF-55310 Group C, Mil-PRF-55310 Qualification or MIL-PRF-38534Group B Inspection will not be performed.3.4.7 Ruggedized COTS Design Implementation. Design Pedigree “D” devices (see ¶ 5.2) use thesame robust designs found in the other device pedigrees. They do not include the provisions of traceability or the Class-qualified componentry noted in paragraphs 3.4.3 and 4.1.REQUIREMENTS4. DETAIL4.1 Components4.1.1 Crystals. Cultured quartz crystal resonators are used to provide the selected frequency for thedevices. The optional use of Premium Q swept quartz can, because of its processing to remove impurities, be specified to minimize frequency drift when operating in radiation environments.In accordance with MIL-PRF-55310, the manufacturer has a documented crystal elementevaluation program.4.1.2 Passive Components.4.1.2.1 For Design Pedigree E, where available, resistors shall be Established Reliability, Failure RateR (as a minimum) and capacitors shall be Failure Rate S. Where resistors and capacitors arenot available as ER parts, and for all other passive components, the parts shall be fromhomogeneous manufacturing lots that have successfully completed the Enhanced ElementEvaluation of DOC208191 which meets the requirements of Mil-PRF-38534 Revision L forClass K.4.1.2.2 For Design Pedigrees R, V and X, where available, resistors shall be Established Reliability,Failure Rate R (as a minimum) and capacitors shall be Failure Rate S. Where resistors andcapacitors are not available as ER parts, and for all other passive components, the parts shall be from homogeneous manufacturing lots that have successfully completed the Class K Element Evaluation of Mil-PRF-38534 Revision K for Class K.4.1.2.3 For Design Pedigrees B and C, all passive elements shall comply with the Element Evaluationrequirements of Mil-PRF-55310 Class B as a minimum.4.1.2.4 For Design Pedigree D, the passive elements will be COTs level or higher.4.1.2.5 When used, inductors will be open construction and may use up to 47-gauge wire.4.1.3 Microcircuits.4.1.3.1 For Design Pedigree E, the microcircuits shall be from homogeneous wafer lots that meet theEnhanced Element Evaluation requirements in DOC208191 and meet the requirements of Mil-PRF-38534 Revision L for Class K.4.1.3.2 For Design Pedigree R, V and X, microcircuits shall be from homogeneous wafer lots that havesuccessfully completed the MIL-PRF-38534, Revision K Lot Acceptance Tests for Class K. 4.1.3.3 For Design Pedigrees B and C, microcircuits are procured from wafer lots that havesuccessfully completed the MIL-PRF-55310 Lot Acceptance Tests for Class B as a minimum.4.1.3.4 For Design Pedigree D, microcircuits can be COTs level or higher.4.1.4 Semiconductors (Varactor Diode)4.1.4.1 For Design Pedigree E, the semiconductors shall be from homogeneous wafer lots that meetthe Enhanced Element Evaluation requirements in DOC208191.4.1.4.2 For Design Pedigree R, V and X, semiconductors shall be from homogeneous wafer lots thathave successfully completed the MIL-PRF-38534, Revision K Lot Acceptance Tests for Class K devices as a minimum.4.1.4.3 For Design Pedigree B and C, semiconductors are procured from wafer lots that havesuccessfully completed the MIL-PRF-55310 Lot Acceptance Tests for Class B devices as a minimum.4.1.4.4 For Design Pedigree D, semiconductors can be COTs level or higher.4.1.5 Radiation. Microcircuits for Design Pedigrees E, R and V are certified to 100krad(Si) totalionizing dose (TID), RHA level R (2X minimum margin). NSC, as the original 54ACT designer, rates the SEU LET up to 40 MeV and SEL LET up to 120MeV for the FACT™ family (AN-932). Vectron conducted additional SEE testing in 2008 to verify this performance since our lot wafer testing does not include these parameters and determinations. Varactor diodes are considered radiation tolerant by design.4.1.6 Packages. Packages are procured that meet the construction, lead materials and finishes asspecified in MIL-PRF-55310. All leads are Kovar with gold plating over a nickel underplate.Package lots are evaluated in accordance with the requirements of MIL-PRF-38534. Vectronwill not perform Salt Spray testing as part of MIL-PRF-55310 Group C/Qualification. Inaccordance with MIL-PRF-55310, package evaluation results for salt atmosphere will besubstituted for Salt Spray testing during MIL-PRF-55310 Group C/Qualification.4.1.7 Traceability and Homogeneity. All design pedigrees except option D have active device lotsthat are traceable to the manufacturer’s individual wafer; all other elements and materials aretraceable to their manufacturer and incoming inspection lots. Design pedigrees E, R, V and Xhave homogeneous material. In addition, swept quartz crystals are traceable to the quartz barand the processing details of the autoclave lot. A production lot, as defined by Microchip, is all oscillators that have been kitted and built as a single group. The maximum deliverablequantity with a single lot date code is 225 units. Order quantities that exceed 225 units will be delivered in multiple lot date codes with deliveries separated by 2 weeks. If applicable, eachproduction lot will be kitted with homogeneous material which is then allocated acrossmultiple lot date code builds to satisfy the deliverable order quantity. When ordered, Group CInspection, lot qualifications, and/or DPA will be performed on the first build lot within theproduction lot unless otherwise stated on the purchase order.4.2 Mechanical.4.2.1 Package Outline. See Figure 1.4.2.2Thermal Characteristics. The worst-case thermal characteristics are found in Table 3.4.2.3Lead Forming. When the lead forming option is specified, the applicable leak test specified inscreening will be performed after forming.4.3 Electrical.4.3.1 Input Power. Devices are available with an input voltage of either +5.0 Vdc (±5%) or +3.3 Vdc(±5%). Current is measured, no load, at maximum rated operating voltage.4.3.2 Temperature Range. Operating range is -40°C to +85°C.4.3.3 Absolute Pull Range. Absolute pull range is defined as the minimum guaranteed amount theVCXO can be varied about the center frequency (fo). It accounts for degradations includingtemperature stability (-40°C to +85°C), aging (15 years), radiation effects, power supplyvariations (±5%) and load variations (±10%).4.3.4 Frequency Aging. When tested in accordance with MIL-PRF-55310 Group B inspection, the15-year aging projection shall not cause the minimum APR limit to be exceeded.4.3.5 Operating Characteristics. Symmetrical square wave limits are dependent on the devicefrequency and are in accordance with Table 1. Waveform measurement points and logic limits are in accordance with MIL-PRF-55310. Start-up time is 10.0 msec. maximum.4.3.6Output Load. ACMOS (10kΩ, 15pF) test loads are in accordance with MIL-PRF-55310.5.QUALITY ASSURANCE PROVISIONS AND VERIFICATION5.1Verification and Test. Device lots shall be tested prior to delivery in accordance with theapplicable Screening Option letter as stated by the 15th character of the part number. Table 4tests are conducted in the order shown and annotated on the appropriate process travelers and data sheets of the governing test procedure. For devices that require Screening Options thatinclude MIL-PRF-55310 Group A testing, the Post-Burn-In Electrical Test and the Group AElectrical Test are combined into one operation.5.1.1Screening Options. The Screening Options, by letter, are summarized as:A Modified MIL-PRF-38534 Class KB Modified MIL-PRF-55310 Class B Screening & Group A Quality ConformanceInspection (QCI)C Modified MIL-PRF-55310 (Rev E) Class S Screening & Group A QCID Modified MIL-PRF-38534 Class K with Group B AgingE Modified MIL-PRF-55310 Class B Screening, Groups A & B QCIF Modified MIL-PRF-55310 (Rev E) Class S Screening, Groups A & B QCIG Modified MIL-PRF-55310 Class B Screening & Post Burn-in NominalElectricalsS MIL-PRF-55310 (Rev F) Class S Screening & Groups A & B QCIX Engineering Model (EM)5.2 Optional Design, Test and Data Parameters. The following is a list of design, assembly,inspection, and test options that can be selected or added by purchase order request.a. Design Pedigree (choose one as the 5th character in the part number):(E) Enhanced Element Evaluation, (MIL-PRF-38534 Rev L for Class K components asspecified in DOC208191), 100krad die, Premium Q Swept Quartz(R) Hi-Rel design w/ 100krad Class K die, Premium Q Swept Quartz(V) Hi-Rel design w/ 100krad Class K die, Non-Swept Quartz(X) Hi-Rel design w/ Non-Swept Quartz, Class K die(B) Hi-Rel design w/ Swept Quartz, Class B die(C) Hi-Rel design w/ Non-Swept Quartz, Class B die(D) Hi-Rel design w/ Non-Swept Quartz and commercial grade componentsb. Input Voltage/APR, (L) for +3.3V/±30ppm, (N) for +5.0V/±30ppm and (W) for+5.0V/±50ppm as the 14th characterc. Not Usedd. Radiographic Inspectione. Group C Inspection: MIL-PRF-55310, Rev E (requires 8 destruct specimens)f. Group C Inspection: MIL-PRF-55310, Rev F (requires 8 destruct specimens, includesRandom Vibration, MIL-STD-883, Method 1014 Leak Test and Life Test)g. Group C Inspection: In accordance with MIL-PRF-38534, Table C-Xc, Condition PI(requires 8 destruct specimens – 5 pc. Life, 3 pc. RGA). Subgroup 1 fine leak test to beperformed per MIL-STD-202, Method 112, Condition C.h. Internal Water-Vapor Content (RGA) samples and test performancei. MTBF Reliability Calculationsj. Worst Case Circuit Analysis: (unless otherwise specified, MIL-HDBK-1547)k. Derating and Thermal Analysis (unless otherwise specified, MIL-HDBK-1547 with TjMax = +105°C; Derated Maximum Operating Temp = Tj Max – ΔTj)l. Process Identification Documentation (PID)m. Customer Source Inspection (pre-crystal mount pre-cap, post-crystal mount pre-cap and final). Due to components being mounted underneath the crystal blank, pre-crystalmount pre-cap inspection should be considered.n. Destruct Physical Analysis (DPA): MIL-STD-1580 with exceptions as specified in Vectron DOC203982.o. Qualification: In accordance with MIL-PRF-55310, Rev F, Table IV (requires 16 destruct specimens). Includes Group III, SG1 through SG6 only. ESD (SG7) notperformed.p. Qualification: In accordance with EEE-INST-002, Section C4, Table 3, Level 1 or 2 (requires 11 destruct specimens)q. High Resolution Digital Pre-Cap Photographs (20 Megapixels minimum)r. Hot solder dip of leads with Sn63/Pb37 solder prior to shipping5.2.1 NASA EEE-INST-002. A combination of Design Pedigree R, Option S Screening, andQualification per EEE-INST-002, Section C4, Table 3, meet the requirements of Level 1 and Level 2 device reliability.5.3Test Conditions. Unless otherwise stated herein, inspections are performed in accordance withthose specified in MIL-PRF-55310. Process travelers identify the applicable methods,conditions, and procedures to be used. Examples of electrical test procedures that correspond to MIL-PRF-55310 requirements are shown in Table 2.5.3.1 When MIL-PRF-55310, Revision F was being reviewed for release by manufacturers andusers, Vectron and other organizations recommended that burn-in delta limits not beapplied to logic level measurements due to the inconsistency in attempting to measuresmall changes in logic levels which inherently have ringing in the signal. This isespecially true in higher frequency oscillators measured in automated test systems thatare affected by cable length that is not representative of the user’s application and contactresistance in test fixtures that do not provide a consistent Vcc or Ground connection. Theexact test setup conditions may vary slightly from pre-burn-in to post-burn-in and causesmall artificial deltas in logic level measurements that are not indicative of an issue. Anysignificant changes in logic levels will be reflected in supply current deltas and/or logiclevels that exceed the min/max limits. As a result, we take exception to MIL-PRF-55310,Revision F, Para. 4.4.5 and the delta limit for Output Low Level as specified in 4.4.5(c)shall not be applied to Burn-in PDA.5.4Deliverable Data. The manufacturer supplies the following data, as a minimum, with each lotof devices:a. As applicable to the Screening Option chosen, completed assembly and screening lottravelers, screening data, including radiographic images, and rework history.b. Electrical test variables data, identified by unique serial number.c. Special items when required by purchase order such as Group C, DPA, and RGA data.d. For Design Pedigrees E, R, V, and X, traceability, component LAT, enclosure LAT,and wafer lot specific RLAT data for non-SMD active devices (if applicable).e. Certificate of Conformance.5.5Discrepant Material. All MRB authority resides with the procuring activity.5.6Failure Analysis. Any failure during Qualification or Group C Inspection will be evaluated forroot cause. The customer will be notified after occurrence and upon completion of theevaluation.6.PREPARATION FOR DELIVERY6.1Packaging. Devices will be packaged in a manner that prevents handling and transit damageduring shipping. Devices will be handled in accordance with MIL-STD-1686 for Class 1devices. Devices will be packaged for transport in accordance with DOC220429. Please note that “one unit per package” is available for a fee; however, this service must be requested aspart of the official RFQ.7.ORDERING INFORMATION7.1 Ordering Part Number. The ordering part number is made up of an alphanumeric series of15 characters. Design-affected product options, identified by the parenthetic letter on theOptional Parameters list (¶ 5.2a and b), are included within the device part number.The Part Number breakdown is described as:5116 R 10M00000 L F7.1.1 Model Number. The device model number is the four (4) digit number 5116.7.1.2 Design Pedigree. Class S variants correspond to either letter “E”, “R”, “V” or “X” and aredescribed in paragraph 5.2a. Class B variants correspond to either letter “B” or “C” and aredescribed in paragraph 5.2a. Ruggedized COTS, using commercial grade components,corresponds to letter “D”.7.1.3Output Frequency. The nominal output frequency is expressed in the format as specified inMIL-PRF-55310 utilizing eight (8) characters.7.1.4 Input Voltage (APR). “L” for +3.3V (±30ppm), “N” for +5.0V (±30ppm) and “W” for +5.0V(±50ppm) as the 14th character.7.1.5 Screening Options. The 15th character is the Screening Option (letter A thru G, S or X) selectedfrom Table 4.7.2Optional Design, Test and Data Parameters. Optional test and documentation requirementsshall be specified by separate purchase order line items (as listed in ¶ 5.2c thru s).Frequency Range: 1.0 MHz to 100.0 MHzTemperature Range: -40°C to +85°CPower Supply (Vcc): +3.3Vdc ±5% or +5.0Vdc ±5%Absolute Pull Range: ±30 ppm or ±50 ppm (+/-30 ppm only for +3.3Vdc)Control Voltage (Vc) Range: 0.3V to +3.0V with Vcc = +3.3VControl Voltage (Vc) Range: 0.5V to +4.5V with Vcc = +5.0VSlope: PositiveLinearity: 10% max.F vs. V Gain: 45 ppm/V min. to 105 ppm/V max.Start-up Time: 10.0 ms max.Frequency Range (MHz)Current (mA)(max. no load)Rise / FallTimes 1/(ns max.)Duty Cycle 1/(%)+5.25V +3.465V1 – 15 15 8 10 45 to 55>15 – 40 20 15 5 40 to 60>40 – 60 35 20 5 40 to 60>60 – 85 45 25 3 40 to 60>85 – 100 55 35 3 40 to 601/. Waveform measurement points and logic limits are in accordance with MIL-PRF-55310, Para 3.6.20.3.TABLE 1 - Electrical Performance CharacteristicsOPERATION LISTING REQUIREMENTS ANDCONDITIONS@ all Electrical TestsInput Current (no load) MIL-PRF-55310, Para 4.8.5.1 ************************.MIL-PRF-55310, Para 4.8.6 Output Logic Voltage Levels MIL-PRF-55310, Para 4.8.21.3 Rise and Fall Times MIL-PRF-55310, Para 4.8.22 Duty Cycle MIL-PRF-55310, Para 4.8.23 Frequency Deviation MIL-PRF-55310, Para 4.8.31.1 Linearity MIL-PRF-55310, Para 4.8.31.5Nominal conditions only@ Post Burn-In Electrical onlyOvervoltage Survivability MIL-PRF-55310, Para 4.8.4 Initial Freq. – Temp. Accuracy MIL-PRF-55310, Para 4.8.10.1 Freq. – Voltage Tolerance MIL-PRF-55310, Para 4.8.14 Start-up Time (fast/slow start) MIL-PRF-55310, Para 4.8.29TABLE 2 - Electrical Test ParametersModel # Thermal ResistanceJunction to Caseθjc (°C / W) Δ Junction Temp.T j(°*********)Weight(Grams)5116 31.62 9.13 1.2 Note: The maximum power from Table 2 is used to calculate the worst case Δ JunctionTemperature.TABLE 3 - Typical Thermal Characteristics and WeightTable 3a – Typical Phase Noise at 16MHz, 3.3VTable 3b – Typical Phase Noise at 16MHz, 5.0VTable 3c – Typical Phase Noise at 50MHz, 3.3VTable 3e – Typical Phase Noise at 80MHz, 3.3VTable 3g – Typical Phase Noise at 100MHz, 5.0VPin ConnectionsVoltage1 Control2 GND/Case3 Output4 VccFIGURE 1Model 5116 Package OutlineAPPENDIX A Recommended Land PatternModel 5116。
深圳市晶发电子有限公司石英晶体谐振器（柱状）说明书
产品规格书SPECIFICATION产品名称石英晶体谐振器Description Crystal Unit型号·标称频率Type·Nominal Frequency20612.000MHz规格书号Specification.JFWSG12010A104C制作DESIGNEDBY杨阳审核CHECKEDBY何珍批准APPROBEDBY肖琳石英晶体谐振器（柱状）RoHS Compliant Standard TDXLF-206-12.000MHz10PFSTANDARD SPECIFICATIONS標準規格标称频率Nominal Frequency12.000MHz负载电容Load Capacitance10pF工作温度范围Operating Temperature-20℃～+70℃频率公差Frequency Tolerance±10ppm25℃温度频差±10PPM（-20~+70之间）等效阻抗＜80Ω激励电平Level of Drive50U W绝缘电阻：50M（插脚间加DC100V±5V）年老化率Aging±5ppm/year静电容＜5PF可靠性1Reliability(Mechanical and Environmental Endurance)Page1of2 NO Test Items Test Method and Condition Requirements1振動Vibration (1)振動頻Vibration Frequency10to55Hz(2)振動幅度Vibration Amplitude1.5mm(3)周期Cycle Time1-2min(10-55-10Hz)(4)振動方向Direction X.Y.Z(5)振動時間Duration2h/each direction頻率變化最大:±10ppm覆蓋The dipped surface of theleads should be at least95%covered with continuous newsolder coating2衝擊Shock 從75cm高的地方自由跌落3次到30mm厚的硬木板上3Times free drop from75cmheight to hard wooden board of thicknessmore than30mm頻率變化最大:±10ppmFrequency Change:±10ppm Max.電阻變化最大:5kohmResistance Change:5kohm Max.3氣密性Leakage 晶體放入氦加壓罐內，充入氦氣壓力0.5-0.6Mpa保持1小時;然後使用氦質譜檢漏儀測試。
MXL 晶体振荡器产品参考表说明书
C L K O S CV C X OT C X OV C T C X OM C FList of products24.000 MHz ～ 80.000 MHz20.000 MHz ～ 80.000 MHz16.000MHz ～ 80.000 MHz12.000 MHz ～ 150.000 MHz9.840 MHz ～ 50.000 MHz10.000MHz ～ 300.000 MHz8.000MHz ～ 60.000 MHz10.000MHz ～ 50.000 MHz9.000MHz ～ 150.000 MHz12.000 MHz ～ 50.000 MHz10.000 MHz ～ 67.000 MHz8.000MHz ～ 10.000 MHz1.20.31.61.60.452.02.00.52.52.50.653.22.50.83.23.20.855.03.21.3 / 1.55.03.21.15.03.51.06.03.50.96.03.51.26.05.01.17.0 / 7.5C L K O S CV C X O T C X O V C T C X O M C F6.000 MHz ～ 70.000 MHz6.000 MHz ～ 70.000 MHz4.000 MHz ～ 50.000 MHz3.579545 MHz ～ 25.000 MHz3.579545 MHz ～ 25.000 MHz3.579545 MHz ～ 32.000 MHz3.579545 MHz ～ 32.000 MHz3.579545 MHz ～ 32.000 MHz3.579545 MHz ～ 61.000 MHz5.01.17.0 / 7.55.01.17.0 / 7.54.51.88.05.51.5 / 1.811.85.02.111.04.33.612.44.74.213.04.74.213.04.74.312.43.112.44.72.612.44.710.52.15.011.35C L K O S CV C X OT C X OV C T C X OM C FList of products3.579545 MHz ～ 61.000 MHz3.579545 MHz ～ 61.000 MHz6.000 MHz ～ 200.000 MHz 10.000 MHz ～ 200.000 MHz20.000 MHz ～ 200.000 MHz1.000 MHz ～ 1.200 MHz1.84320 MHz ～ 200.000 MHz1.84320 MHz ～ 200.000 MHz10.55.011.352.510.55.011.353.57.83.1 / 2.88.02.55.88.03.1 / 2.82.54.48.03.1 / 2.82.58.07.97.13.2 / 2.76.03.2 / 2.77.97.14.57.97.13.2 / 2.711.54.913.5 / 11.54.013.5 / 11.211.34.9C L K O S C V C X O T C X O V C T C X OM C F List of products32.768 kHz 32.768 kHz 32.768 kHz 32.768 kHz 32.768 kHz 32.768 kHz 32.768 kHz 32.768 kHz 30.000 kHz 100.000 kHz32.768 kHz 32.768 kHz 1.20.552.01.50.83.21.81.04.91.51.47.09.0 2.543.02.58.32.542.31.24.73.72.47.94.1C L K O S CV C X OT C X OV C T C X O M C FList of products32.768 kHz 32.768 kHz 32.768 kHz 30.000 kHz ～ 100.000 kHz 30.000 kHz ～ 100.000 kHz 1.45.01.96.01.96.01.24.7X T A LV C X OT C X O V C T C X O M C F List of productsCMOSCMOSCMOSCMOS CMOS CMOSCMOSCMOSCMOSCMOSCMOSCMOS1.60.752.02.00.92.52.51.03.22.00.92.52.51.03.23.21.25.05.01.37.02.00.92.52.51.03.23.21.055.05.01.37.01.60.752.5XTALVCXOTCXOVCTCXOMCFList of productsCMOS CMOS CMOSLVPECL LVPECL LVPECLLVDS LVDS LVDSHCSL HCSL HCSL5.01.37.03.21.055.02.51.03.25.01.57.02.50.93.23.21.25.05.01.57.02.50.93.23.21.25.05.01.57.02.50.93.23.21.25.0X T A LV C X O T C X O V C T C X O M C F List of productsCMOS CMOS CMOS CMOS CMOS CMOS 2.50.93.21.51.03.22.00.92.52.51.03.23.21.25.05.01.37.0XTALCLKOSCTCXOVCTCXOMCFList of productsCMOS CMOS CMOSCMOS CMOSCMOS LVPECL LVPECLLVPECL LVDS2.00.92.52.01.03.22.50.93.23.21.25.03.21.25.05.01.67.05.01.57.03.21.25.05.01.77.02.50.93.2CMOS5.01.77.0LVDS3.21.25.0X T A LC L K O S CT C X O V C T C X O M C FXTALCLKOSCVCXOVCTCXOMCFList of products12CLIPPED SINE CLIPPED SINE CLIPPED SINECLIPPED SINE CLIPPED SINE CLIPPED SINECLIPPED SINECLIPPED SINE CLIPPED SINECLIPPED SINE CLIPPED SINE CLIPPED SINE1.60.72.01.60.72.01.60.72.01.60.72.01.60.72.01.60.72.02.00.82.52.00.82.5VcontrolX T A LC L K O S CV C X O V C T C X OM C F 13CLIPPED SINE CLIPPED SINE CLIPPED SINE CLIPPED SINE CLIPPED SINE CLIPPED SINE CLIPPED SINE CLIPPED SINE CLIPPED SINE CLIPPED SINE CLIPPED SINE 2.00.82.52.00.82.52.00.82.52.00.82.52.50.93.22.50.93.22.50.93.23.21.055.03.21.055.05.01.657.05.01.657.02.50.93.2E/D contro + VcontrollVcontrolXTALCLKOSCVCXOVCTCXOMCFList of products14CMOSCMOS CLIPPED SINE CLIPPED SINECMOS CMOSCLIPPED SINE CMOS CMOSCMOS CLIPPED SINE CLIPPED SINE2.00.92.52.51.03.23.21.055.05.01.37.03.21.55.03.21.55.03.21.55.03.21.55.03.21.55.03.21.55.0X T A LC L K O S CV C X O V C T C X OM C F 15CLIPPED SINE CMOSCMOSCLIPPED SINE CLIPPED SINE CMOSCLIPPED SINE CMOSCLIPPED SINE CLIPPED SINE 5.01.77.05.01.77.05.01.77.05.01.77.05.01.77.05.01.77.05.01.77.05.01.77.03.21.75.03.21.75.0VcontrolXTALCLKOSCVCXOVCTCXOMCFList of products16CMOS CMOS3.21.75.03.21.75.0X T A LC L K O S CV C X O T C X O M C F 17CMOS9.76.514.6X T A LC L K O S CV C X O T C X O V C T C X O List of products1814.575 MHz ～ 150.000 MHz21.400 MHz ～ 90.000 MHz5.01.357.05.00.87.03.81.03.8V C X OT C X OO C X OM C FV C X OT C X OO C X OM C F 2223PACKAGE DATA#1#4#2#3<Top View><#2 : Grounded to metal lid>11 M 260 - 7Package typeLoad capacitance (CL)Circuit calibration conditionFrequency designatorAT -CUTTYPICAL TEMPERATURE CHARACTERISTICSC )∆f/f(ppm)SOLDERING PATTERNM C FM C F 2425TYPICAL TEMPERATURE CHARACTERISTICS2627Actual size0.0165 gm (wt.)32SMX(A)3.2±0.1#4#3282953SMX(B)0.0238 gm (wt.) Actual size53SMX(C)0.0413 gm (wt.)Actual size53SMX(D)0.0564 gm (wt.)Actual size303197SMX(A)0.0585 gm (wt.) Actual size97SMX(B)0.0531 gm (wt.)Actual size97SMX(C)0.0549 gm (wt.)Actual size323394SMX(B)0.1213 gm (wt.)Actual size94SMX(C)0.1266 gm (wt.)Actual size94SMX(D)0.1249 gm (wt.)Actual size3435363793SMX(A)8.0±0.20.1667 gm (wt.)Actual size0.208 gm (wt.)93SMX(B)Actual size383992SMX(CN)11.8±0.20.2568 gm (wt.)Actual size0.2355 gm (wt.)92SMX(D)Actual size86SMX(LPN)0.344 gm (wt.)Actual size86SMX(CSM)0.6703 gm (wt.)Actual size404142434HLB0.5722 gm (wt.)Actual size0.5434 gm (wt.)3HLBActual size25HLB0.402 gm (wt.)Actual sizeC L K O S CV C X OT C X OO C X OM C FC L K O S CV C X OT C X OO C X OM C F4445STANDARD SPECIFICATIONSHOLDER DATAHC-49/U-2H, 3H & 4H STANDARD FREQUENCIES4H 080 -16Holder typeLoad capacitance (CL)Frequency designatorExamplePART NUMBERING GUIDETYPICAL TEMPERATURE CHARACTERISTICSC )∆f/f(ppm)AT -CUTHC-49/U-2H10.5 max.m a x .3.8 max.HC-49/U-3Ha x .HC-49/U-4Ha x .0.336 gm (wt.)HC -49/U -2HActual sizeHC -49/U -3H0.4432 gm (wt.)Actual sizeHC -49/U -4H0.535 gm (wt.)Actual size200-20-40-60-80-100-120-140-160-180-200-220-240-40 -25 -10 +5 +20 +35 +50 +65 +80 +95 +110TYPICAL TEMPERATURE CHARACTERISTICS(゜C )∆f/f (ppm)BT -CUT46T O C X OM C F0.41 gm (wt.)0.336 gm (wt.)UM -4(MJ)0.31 gm (wt.)PACKAGE DATAPART NUMBERING GUIDEUM1(MJ) / 12.288M - 16 / Q / TTiiiPackage type Temperature stability Frequency Frequency toleranceLoad capacitance (CL)-45 -30 -15 0 +15 +30 +45 +60 +75 +90TYPICAL TEMPERATURE CHARACTERISTICSC )∆f/f (ppm)AT -CUTUM-1(MJ), UM-5(MJ), UM-4(MJ)ACTUAL SIZETAPE SPECIFICATIONSA B C D F J L M Reel Dia.Qty/Reel 12.48.224.011.512.01.50.43.33301000pcsA B C D F J L M Reel Dia.Qty/Reel 10.68.224.011.512.01.50.43.33301000pcsUM-5(MJ) & UM-5S(MJ)A B C D F J L M Reel Dia.Qty/Reel 9.28.216.07.512.01.50.43.33301000pcsUM-4(MJ) & UM-4S(MJ)47C L K O S CV C X O T C X OO C X OM C F0.295 gm (wt.)STANDARD SPECIFICATIONSHOLDER DATAUM1 / 15.360M - 16 / J / OOiiiHolder type Temperature stabilityFrequencyFrequency tolerance Load capacitance (CL)PART NUMBERING GUIDETYPICAL TEMPERATURE CHARACTERISTICSC )∆f/f(ppm)AT -CUTSL -CUTUM-1, UM-5 & UM-4Holder UM-1UM-5UM-4H8.0 mm max.6.0 mm max.4.5 mm max.UM-1S, UM-5S & UM-4SHolder UM-1UM-5UM-4H8.0 mm max.6.0 mm max.4.5 mm max.UM -10.354 gm (wt.)Actual sizeUM -5Actual sizeUM -40.254 gm (wt.)Actual size48M C FPACKAGE DATATYPICAL TEMPERATURE CHARACTERISTICSA B C D F J L M Reel Dia.Qty/Reel 19.012.024.011.516.01.50.46.03301000pcsA B C D F J L M Reel Dia.Qty/Reel 17.812.024.011.516.02.00.45.63301000pcsHC-49/UT(MJ)49C L K O S C V C X O T C X OO C X OM C FHOLDER DATASTANDARD SPECIFICATIONSPART NUMBERING GUIDE49 M 2.4576M - 16 / T / XXgggHolder type Temperature stability Circuit calibration condition Frequency tolerance FrequencyLoad capacitance (CL)TYPICAL TEMPERATURE CHARACTERISTICSC )∆f/f(ppm)AT -CUTHC-49 / U, HC-49 / UT10.5 max.3.8 max.Holder HC-49/U HC-49/UT H13.5 mm max.11.2 mm max.HC -49 / U0.975 gm (wt.)Actual sizeHC -49 / UT0.9075 gm (wt.)Actual size50O C X OM C FPACKAGE DATA38.400MHz 11SMX O / OO / iii / 7FrequencyLoad capacitance (CL)Package type Operating temperature rangeFrequency toleranceTemperature stabilityExampleTYPICAL TEMPERATURE CHARACTERISTICSC )∆f/f(ppm)AT -CUTTAPE SPECIFICATIONS51O C X OM C FPACKAGE DATA27.000MHz 21SMX R / TT / iii / 8FrequencyLoad capacitance (CL)Package type Operating temperature rangeFrequency toleranceTemperature stability21SMX#4#32.0±0.1TYPICAL TEMPERATURE CHARACTERISTICSC )∆f/f(ppm)AT -CUT0.00568 gm (wt.)Actual size Actual sizeTAPE SPECIFICATIONS52O C X OM C FPACKAGE DATA48.000MHz 22SMX Q / TT / mll / 8FrequencyLoad capacitance (CL)Package type Operating temperature rangeFrequency toleranceTemperature stabilityExampleTYPICAL TEMPERATURE CHARACTERISTICSC )∆f/f(ppm)AT -CUT22SMX2.5±0.10.00953 gm (wt.)Actual size TAPE SPECIFICATIONS53M C FPACKAGE DATA TAPE SPECIFICATIONS54M C FPACKAGE DATATAPE SPECIFICATIONS55M C FPACKAGE DATA TAPE SPECIFICATIONS110SMX 1.6±0.10.003 gm (wt.) Actual sizeA B C D F J L M Reel Dia.Qty/Reel1.85 1.258.0 3.5 4.00.50.250.651803000pcs5000pcs58Actual sizeActual size0.0055 gm (wt.)212SMX2.0±0.055931SMX 3.2±0.20.0125 gm (wt.) Actual size6061O C X M C FPACKAGE DATA415SMX4.1±0.2TYPICAL TEMPERATURE CHARACTERISTICS0.017 gm (wt.)Actual sizeActual sizeTAPE SPECIFICATIONS62O C M C FPACKAGE DATA52SMX4.9±0.15TYPICAL TEMPERATURE CHARACTERISTICS0.0257 gm (wt.)Actual sizeTAPE SPECIFICATIONS124SMX7.0 max.50.0295 gm (wt.)Actual size63MCF90SMX(N)<Top View>TYPICAL TEMPERATURE CHARACTERISTICSC¨I I(ppm)XY-CUT0.125 gm (wt.)Actual size0.121 gm (wt.)90SMX(S)Actual sizeTAPE SPECIFICATIONSA B C D F J L M Reel Dia.Qty/Reel8.3 4.016.07.58.0 1.60.3 2.73303000pcs90SMX(N)A B C D F J L M Reel Dia.Qty/Reel8.7 3.916.07.58.0-0.4 2.73303000pcs90SMX(S) SOLDERING PATTERN90SMX(N) & 90SMX(S)6465O C X M C F( ) Formerly 2x6(LF)MJNPACKAGE DATA26(LF)MJTYPICAL TEMPERATURE CHARACTERISTICS0.079 gm (wt.)Actual sizeTAPE SPECIFICATIONS66O M C F( ) Formerly 26STF327(LF)H ( ) Formerly 2x6(LF)HPACKAGE DATA26(LF)TAPE SPECIFICATIONSA B C D F J L M Reel Dia.Qty/Reel 9.74.03.516.07.58.0-0.32.153302000pcs 1000pcs0.0535 gm (wt.)Actual sizeQuartz Crystal Units67C L K O S CV C X OT C X O O C X OM C F(*) Shock is defined "three drops from a hight of 75cm onto hardwood."STANDARD SPECIFICATIONSPACKAGE DATA1.2x4.7mm2.0x6.0 mm1.4x5.0 mm3.0x8.0 mm1.2 x 4.7 mm0.015 gm (wt.)Actual size0.026 gm (wt.)1.4 x 5.0 mmActual size0.05 gm (wt.)2.0 x 6.0 mmActual size0.143 gm (wt.)3.0 x 8.0 mmActual sizeTYPICAL TEMPERATURE CHARACTERISTICS(゜C )∆f/f(ppm)XY -CUTActual size0.008 gm (wt.)21SMO2.05±0.1#4#370。