TSP12N60M

Min
Typ
Max
Units
Off Characteristics
BVDSS △BVDSS / △TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 uA ID = 250 uA, Referenced to 25℃ VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125℃ VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0.6 ------1 10 100 -100 V V/℃ uA uA nA nA
TSP12N60M 600 12 7.4 48 ±30 865 12 23 4.5 230 1.85
TSF12N60M 12 * 7.4 * 48 *
Units V A A A V mJ A mJ V/ns W W/℃ ℃ ℃
- Continuous (TC = 25℃) - Continuous (TC = 100℃) Drain Current - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25℃) - Derate above 25℃ Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
IDR, Reverse Drain Current [A] ]
1.5
10
1
VGS = 10V
1.0
10
0
VGS = 20V
0.5
※ Note : TJ = 25℃
150℃
25℃
※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test
0
5
10
15
20
25
30
35
10
-1
0.2
ቤተ መጻሕፍቲ ባይዱ

Rev. 00 October . 2012
TSP12N60M / TSF12N N60M
Typical Characteristics
VGS 15 15.0 0V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
54 0.43 -55 to +150 300
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol RθJC RθJS RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient TSP12N60M 0.54 0.5 62.5 TSF12N60M 2.33 -62.5 Units ℃/W ℃/W ℃/W
(Note 4)
2.0 ---
-0.53 13
4.0 0.7 --
V Ω S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1850 180 20 ---pF pF pF
8
2000 1500 1000 500 0 -1 10
Coss
6
Crss
※ Notes ; 1. VGS = 0 V 2. f = 1 MHz
4
2
※ Note : ID = 12A
10
0
10
1
0
0
10
20
30
40
50
60
VDS, Drain-Source a Sou ce Voltage o age [ [V] ]
QG, Total Gate Charge g [nC] [ ]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics

IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 12 A VGS = 0 V, IS = 12 A, dIF / dt = 100 A/us
(Note 4)
------
---430 5.0
12 48 1.4 ---
A A V ns uC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 11mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD 12A, di/dt 200A/us, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300us, Duty cycle 2% 5. Essentially independent of operating temperature
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
RDS(ON) [Ω ], ce Drain-Source On-Resistanc

Rev. 00 October . 2012
TSP12N60M / TSF12N N60M
Electrical Characteristics
Symbol Parameter
TC = 25°C unless otherwise noted
Test Conditions
Features
- 12A, 600V, RDS(on) = 0.7Ω@VGS = 10 V - Low gate charge ( typical 52 nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability
12
3500 3000 2500
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
VDS = 120V
Ciss
VGS, Gate-Source Voltage [V]
10
VDS = 300V VDS = 480V
Capacitance [pF]
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 uA VGS = 10 V, ID = 6 A VDS = 40 V, ID = 6 A
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate Source Charge Gate-Source Gate-Drain Charge VDD = 325 V, ID = 12 A, RG = 25 Ω
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Parameter
TC = 25°C unless otherwise noted