BAV19WS
TC德昌takcheong选型 ESD二极管,开关二极管,肖特基二极管,触发二极管,数字三极管,场效应管MOS,双极型三极管
TC德昌takcheongESD二极管产品选型Ptot C Max VBR VRWM Max IR Max Max IPP PPK Max Package (W)(pF)(V)(V)(μA)(A)(W)OutlineESD5Z5V0C0.15Typ. 15 5.6~7.851448SOD-523ESD5Z12V0.15Typ. 55>13.5121595SOD-523ESD5Z3V30.15Typ. 80>5.03.3111.2158SOD-523ESD5Z5V00.15Typ. 80>6.2519.4174SOD-523ESD8D3V3CA0.1516>5 3.30.16SOD-882ESD5Z7V00.15Typ. 65>7.5718.8200SOD-523ESD5Z36V0.15Typ. 20>403615120SOD-523ESD8D5V0C0.15Typ. 15>5.6515SOD-882ESD8LM5V0C0.15Typ. 3.5>5.651 3.5SOD-882ESD8L5V0C0.150.9>5.4511SOD-882ESD11D5V0C0.15Typ. 15>5.650.5 5.5DFN0603ESD11LL5V00.15Typ. 0.75>6.050.54DFN0603ESD8LL5V00.150.65>5.4514SOD-882开关二极管产品类型Ptot VR VR Ir V F VF IF I R IR VR trr Package(W)(V)(uA)(V)(mA)(uA)(V)(ns)OutlineBAV21W0.425010011000.120050SOD-123BAV19W0.412010011000.110050SOD-123BAV20W0.420010011000.115050SOD-1231N914BW0.41001000.7255754SOD-1231N4448W0.41001000.7255754SOD-1231N4148WS0.21001001105754SOD-3231N4148W0.41001001105754SOD-1231N4448WS0.21001000.7255754SOD-3231N914BWS0.21001000.7255754SOD-323 BAV21WSG0.225010011000.120050SOD-323G BAV21WG0.425010011000.120050SOD-123G BAV20WS0.220010011000.115050SOD-3231N914BS0.41001000.7255754DO-35BAV20WSG0.220010011000.115050SOD-323G BAV20WG0.420010011000.115050SOD-123G BAV21WS0.225010011000.120050SOD-3231N4448S0.41001000.7255754DO-35BAV19WSG0.212010011000.110050SOD-323G BAV19WG0.412010011000.110050SOD-123G1SS3550.2801001.21000.1804SOD-323产品类型Ptot VR VR Ir V F VF IF I R IR VR trr Package (W)(V)(uA)(V)(mA)(uA)(V)(ns)Outline1N4148S0.41001001105754DO-351N4448WSG0.21001000.7255754SOD-323G 1N4448WG0.41001000.7255754SOD-123G CDSQR41481251001001105754SOD-8821N4148WSG0.21001001105754SOD-323G1N4148WG0.41001001105754SOD-123G1SS400BS150- - 1.21000.1804SOD-882KEL 1N914BWT0.21001000.7255754SOD-523 KEL 1N4448WT0.21001000.7255754SOD-523 KEL 1N4148WT0.21001001105754SOD-523 KEL BAV21WS0.225010011000.120050SOD-323 KEL BAV20WS0.220010011000.115050SOD-323 KEL BAV19WS0.212010011000.110050SOD-323 KEL 1N914BWS0.21001000.7255754SOD-323 KEL 1N4448WS0.21001000.7255754SOD-323 KEL 1N4148WS0.21001001105754SOD-323 KEL BAV21W0.425010011000.120050SOD-123 KEL BAV20W0.420010011000.115050SOD-123KEL BAV19W0.412010011000.110050SOD-123产品类型Ptot VR VR Ir V F VF IF I R IR VR trr Package (W)(V)(uA)(V)(mA)(uA)(V)(ns)OutlineKEL 1N914BW0.41001000.7255754SOD-123 KEL 1N4448W0.41001000.7255754SOD-123 KEL 1N4148W0.41001001105754SOD-123 TCBAV210.525010011000.120050DO-35TCBAV200.520010011000.115050DO-35TC1SS133M0.3800.5 1.21000.5804DO-341SS4220.20.5 1.21500.1854SOD-523 TCBAS160.2751000.71511754SOD-523 TC1SS4000.21001001.21000.1804SOD-523BAV99T0.158500.71510.03254SOT-523 BAV70T0.158500.71510.03254SOT-523 BAW56T0.158500.71510.03254SOT-523TC1N914BWT0.21001000.7255754SOD-523 TC1N4448WT0.21001000.7255754SOD-523 TC1N4148WT0.21001001105754SOD-523 TCLL914B0.51001000.7255754LL-34TCBAV1030.525010011000.120050LL-34 TCBAV1020.520010011000.115050LL-34TCBAV1010.512010011000.110050LL-34产品类型Ptot VR VR Ir V F VF IF I R IR VR trr Package (W)(V)(uA)(V)(mA)(uA)(V)(ns)OutlineTCBAV1000.56010011000.15050LL-34 TCLL41510.57551500.05504LL-34TCLL44480.51001000.7255754LL-34TCLL41480.51001001105754LL-34TCBAW760.575511000.1504DO-35TC1N914B0.51001000.7255754DO-35TC1N44480.51001000.7255754DO-35TC1N41480.51001001105754DO-35TC1SS244M0.32501001.520010022050DO-34TC1N914BM0.31001000.7255754DO-34TC1N4448M0.31001000.7255754DO-34TC1N4148M0.31001001105754DO-34肖特基二极管产品类型Ptot VRRM IFSM VF VF@IF IR IR@VR Trr Package (W)(V)(A)(V)(mA)(μA)(V)(ns)OutlineRB501V-40G0.24010.551003010SOD-323GB5819WSG0.254090.6100010004030SOD-323GBAT54WSG0.23040.81002255SOD-323GSD103CWG0.42020.6200510SOD-123GRB751BS-400.15400.20.3710.530SOD-882SD103CWSG0.22020.6200510SOD-323GSD103BWG0.43020.6200520SOD-123GMBR30200CT2000.91520200TO-220SD103BWSG0.23020.6200520SOD-323GSD103AWG0.44020.6200530SOD-123GRB521S8-300.15300.50.52003010SOD-882B5819WS0.254090.6100010004030SOD-323MSK4010 -- 4060.810001000040-- SOD-523SD103AWSG0.24020.6200530SOD-323GB5819WG0.54090.61000100040SOD-123GRB520S8-300.15300.50.6200110SOD-882MBR10100CT1000.855100100TO-220BAS850.23040.240.12255LL-34TCBAT850.23040.240.12255DO-35TCBAT430.23040.3320.5255DO-35产品类型Ptot VRRM IFSM VF VF@IF IR IR@VR Trr Package (W)(V)(A)(V)(mA)(μA)(V)(ns)OutlineTCBAT420.23040.4100.5255DO-35TCRB520S-300.20.6200110SOD-523MBRF3065CT652000.6415150065TO-220MBRF20200CT2000.9510200200TO-220MBRF20150CT1500.910200150TO-220MBRF20100CT1000.8510200100TO-220MBRF10200CT2000.955100200TO-220MBRF10150CT1500.95100150TO-220MBRF10100CT1000.855100100TO-220MBR20200CT2000.910200200TO-220MBR20150CT1500.8510200150TO-220MBR20100CT1000.810200100TO-220MBR10200CT2000.955100200TO-220MBR10150CT1500.95100150TO-220BAT54ST0.15300.241002255SOT-523BAT54T0.15300.241002255SOT-523RB520S-400.2400.6200110SOD-523BAT43XV20.23040.410500255SOD-523BAT42XV20.23040.410500255SOD-523BAT54XV20.23040.240.12255SOD-523产品类型Ptot VRRM IFSM VF VF@IF IR IR@VR Trr Package (W)(V)(A)(V)(mA)(μA)(V)(ns)OutlineTCRB751S-400.2400.20.3710.530SOD-523TCRB521S-300.20.52003010SOD-523RB500V-404510.4510110SOD-323SD103CWS0.22020.6200510SOD-323SD103BWS0.23020.6200520SOD-323SD103AWS0.24020.6200530SOD-323BAT54WS0.23040.240.12255SOD-323RB751V-400.2400.20.3710.530SOD-323BAT43WS0.23040.3320.5255SOD-323BAT42WS0.23040.4100.5255SOD-323RB501V-400.210.341010040SOD-323RB551V-300.250.3610010020SOD-323B5819W0.54090.61000100040SOD-123SD103CW0.42020.6200510SOD-123SD103BW0.43020.6200520SOD-123SD103AW0.44020.6200530SOD-123BAT54W0.43040.4102255SOD-123BAT43W0.43040.4100.5255SOD-123BAT42W0.43040.4100.5255SOD-123LL60P0.5455000.511151LL-34产品类型Ptot VRRM IFSM VF VF@IF IR IR@VR Trr Package (W)(V)(A)(V)(mA)(μA)(V)(ns)OutlineLL600.5405000.510.5151LL-34LLBAT430.23040.3320.5255LL-34LLBAT420.23040.4100.5255LL-34TC1N60P0.5450.50.510.5151DO-35TC1N600.5400.150.510.5151DO-35触发二极管产品类型VBR Min.VBR Typ.VBR Max.ΔV@VF at 10mA IBO Package (V)(V)(V)(V)(μA)OutlineLLDB3283236550LL-34KELDB3283036550DO-35数字三极管产品类型Polarity Ptot IC Vcbo V ceo H FE HFE HFE R1R2Package (W)(A)(V)(V)Min.@VCE@IC/IE Outline(V)(A)DTA143TE PNP0.15 -100mA-50-50100-5V-1mA 4.7∞SOT523DTA143EE PNP0.15 -100mA-50-5030-5V-10mA 4.7 4.7SOT523DTA124XE PNP0.15 -100mA-50-5068-5V-5mA2247SOT523DTA124EE PNP0.15 -100mA-50-5056-5V-5mA2222SOT523DTA123JE P NP0.15 -100mA-50-5080-5V-10mA 2.247SOT523DTA123EE PNP0.15 -100mA-50-508-10V -5mA 2.2 2.2SOT523 DTA114TE PNP0.15 -100mA-50-50100-5V-1mA10∞SOT523 DTA143ZE PNP0.15 -100mA-50-5080-5-0.01 4.747SOT523 DTA144EE PNP0.15 -100mA-50-5068-5-0.0054747SOT523 DTA114YE PNP0.15 -100mA-50-5068-5-0.0051047SOT523 DTA114EE PNP0.15 -100mA-50-5030-5-0.0051010SOT523 DTC123JE N PN0.150.1505080100.005 2.247SOT-523DTC124XE NPN0.150.1505080100.0052247SOT-523 DTC143ZE NPN0.150.1505080100.005 4.747SOT-523 DTC143EE NPN0.150.1505015100.005 4.7 4.7SOT-523 DTC123EE NPN0.150.150508100.005 2.2 2.2SOT-523 DTC143TE NPN0.150.150********.005 4.7∞SOT-523 DTC114TE NPN0.150.150********.00510∞SOT-523 DTC114YE NPN0.150.1505080100.0051047SOT-523DTC144EE NPN0.150.1505080100.0054747SOT-523产品类型Polarity Ptot IC Vcbo V ceo H FE HFE HFE R1R2Package (W)(A)(V)(V)Min.@VCE@IC/IE Outline(V)(A)DTC124EE NPN0.150.1505060100.0052222SOT-523 DTC114EE NPN0.150.1505035100.0051010SOT-523产品类型Ptot VR IF trr VF IR IFSM IFRM Cd Package (mW)(V)(mA)(ns)(mV)(nA)(A)(mA)(pF)PH1N4148TR50010020041000@IF=10mA25@VR=20V44504SOD27PH1N4148TB50010020041000@IF=10mA25@VR=20V44504SOD27PH1N4148T26B50010020041000@IF=10mA25@VR=20V44504SOD27 PH1N4448TR50010020041000@IF=100mA25@VR=20V44504SOD27PH1N4448TB50010020041000@IF=100mA25@VR=20V44504SOD27PH1N4448T26B50010020041000@IF=100mA25@VR=20V44504SOD27 PH1N914BTR3507525041000@IF=100mA5000@VR=75V44502SOD27 PH1N914BTB3507525041000@IF=100mA5000@VR=75V44502SOD27PH1N914BT26B3507525041000@IF=100mA5000@VR=75V44502 SOD27MOS场效应管产品类型Type V DS VGS ID Vgs(th)Vgs(th)PD RDSON Package(V)(±V)(A)MIN(V)MAX(V)(W)MAX(Ω)OutlineLSI1012XT1G MOSFET2060.50.450.90.150.7SOT-5232SK3019MOSFET30200.10.8 1.50.158SOT-5232N7002T MOSFET60200.1151 2.50.157.5SOT-523产品类型Polarity Ptot IC Vcbo V ceo H FE HFE HFE HFE fT PackageMin.Max.@VCE@IC/IE Outline(W)(A)(V)(V)(V)(A)(MHz)双极型三极管MMBT3906T PNP0.2-0.2-40-40100300-1-0.01250SOT523 MMBT3904T NPN0.20.2604010030010.01200SOT-5232SC4617NPN0.150.1505012056060.001230SOT-5232SA1774PNP0.15 -0.1-50-50120560-6-0.001230SOT523。
BAV21WS-V中文资料
BAV19WS-V/20WS-V/21WS-VDocument Number 85726Rev. 1.4, 31-Jul-06Vishay Semiconductors120145Small Signal Switching Diodes, High VoltageFeatures•Silicon Epitaxial Planar Diodes •For general purpose•These diodes are also available in othercase styles including: the DO35 case with the type designation BAV19 - BAV21, the MiniMELF case with the type designation BAV100 - BAV103, the SOT23 case with the type designation BAS19 -BAS21 and the SOD123 case with the type desig-nation BAV19W-V - BAV21W-V •Lead (Pb)-free component•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/ECMechanical DataCase: SOD323 Plastic case Weight: approx. 5.0 mgPackaging Codes/Options:GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/boxParts TablePartT ype differentiation Ordering codeType MarkingRemarks BAV19WS-V V R = 100 V BAV19WS-V-GS18 or BAV19WS-V-GS08A8Tape and Reel BAV20WS-V V R = 150 V BAV20WS-V-GS18 or BAV20WS-V-GS08A9Tape and Reel BAV21WS-VV R = 200 VBAV21WS-V-GS18 or BAV21WS-V-GS08AATape and Reel 2Document Number 85726Rev. 1.4, 31-Jul-06BAV19WS-V/20WS-V/21WS-VVishay Semiconductors Absolute Maximum RatingsT amb = 25°C, unless otherwise specified1) Valid provided that leads are kept at ambient temperatureThermal CharacteristicsT amb = 25°C, unless otherwise specified1) Valid provided that leads are kept at ambient temperatureElectrical CharacteristicsT amb = 25°C, unless otherwise specifiedParameterTest conditionPart Symbol Value Unit Continuous reverse voltageBAV19WS-V V R 100V BAV20WS-V V R 150V BAV21WS-VV R 200V Repetitive peak reverse voltageBAV19WS-V V RRM 120V BAV20WS-V V RRM 200V BAV21WS-VV RRM 250V Forward continuous currentT amb = 25°CI F 2501)mA Rectified current (average) half wave rectification with resist. loadT amb = 25°C I F(AV)2001)mARepetitive peak forward current f ≥ 50 Hz, θ = 180°, T amb = 25°C I FRM 6251)mA Surge forward current t < 1 s, T j = 25°C I FSM 1A Power dissipationT amb = 25°CP tot2001)mWParameterTest condition Symbol Value Unit Thermal resistance junction to ambient airR thJA 6501)K/W Junction temperature T j 1501)°C Storage temperature rangeT stg- 65 to + 1501)°CParameterTest conditionPartSymbol MinTyp.Max Unit Forward voltage I F = 100 mA V F 1.00V I F = 200 mA V F 1.25V Leakage currentV R = 100 VBAV19WS-V I R 100nA V R = 100 V , T j = 100°C BAV19WS-V I R 15µA V R = 150 VBAV20WS-V I R 100nA V R = 150 V , T j = 100°C BAV20WS-V I R 15µA V R = 200 VBAV21WS-V I R 100nA V R = 200 V , T j = 100°CBAV21WS-VI R 15µA Dynamic forward resistance I F = 10 mA r f 5ΩDiode capacitance V R = 0, f = 1 MHz C D 1.5pF Reverse recovery timeI F = 30 mA, I R = 30 mA, I rr = 3 mA, R L = 100 Ωt rr50nsBAV19WS-V/20WS-V/21WS-VDocument Number 85726Rev. 1.4, 31-Jul-06Vishay Semiconductors3Typical CharacteristicsT amb = 25°C, unless otherwise specifiedFigure 1. Forward Current vs. Forward Voltage Figure 2. Admissible Forward Current vs. Ambient Temperature Figure 3. Admissible Power Dissipation vs. Ambient Temperature 18858I - F o r w a r d C u r r e n t (m A )F V F - For w ard V oltage (V )30609012015018859T am b - Am b ient Temperat u re (°C)I ,I - A d m i s s i b l e F o r w a r d C u r r e n t (A )O F 20018864T am b - Am b ient Temperat u re (°C)250200150100502040608010012014016018000P - A d m i s s i b l e P o w e r D i s s i p a t i o n (W )t o t Figure 4. Dynamic Forward Resistance vs. Forward CurrentFigure 5. Leakage Current vs. Junction TemperatureFigure 6. Capacitance vs. Reverse Voltager -D y n a m i c F o r w a r d R e s i s t a n c e f (Ω)10100111001018861I F - For w ard C u rrent (mA)0.118862110100100020406080100120140160180200I (T )/I (25 °C ) - L e a k a g e C u r r e n tR R j T j - J u nction Temperat u re (°C)Re v erse V oltageBA V 19W S-V V = 100 V R BA V 20W S-V V =150V R BA V 21W S-V V =200VR 188631100.10.80.60.41.41.21.00.20100C -D i o d e C a p a c i t a n c e (p F )D V R - Re v erse V oltage (V )2.01.81.6=25°CT j 4Document Number 85726Rev. 1.4, 31-Jul-06BAV19WS-V/20WS-V/21WS-V Vishay SemiconductorsPackage Dimensions in mm (Inches): SOD323BAV19WS-V/20WS-V/21WS-VDocument Number 85726Rev. 1.4, 31-Jul-06Vishay Semiconductors5Ozone Depleting Substances Policy StatementIt is the policy of Vishay Semiconductor GmbH to1.Meet all present and future national and international statutory requirements.2.Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs).The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances.Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.We reserve the right to make changes to improve technical designand may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personaldamage, injury or death associated with such unintended or unauthorized use.Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyDocument Number: 91000Revision: 18-Jul-081DisclaimerLegal Disclaimer NoticeVishayAll product specifications and data are subject to change without notice.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.Product names and markings noted herein may be trademarks of their respective owners.元器件交易网。
BBCNews：“菲莱”探测器在彗星表面发现有机物质
★英语听⼒频道为⼤家整理的BBC News:“菲莱”探测器在彗星表⾯发现有机物质。
更多阅读请查看本站频道。
BBC News with Johnathan Izard.Johnathan Izard为您播报BBC新闻。
The Israeli Prime Minister Benjamin Netanyahu has called on Israelis to unit but not to take the law into their own hands after 2 Palestinians armed with guns and meat cleavers killed 4 worshipers at Sinigal and Jerusalem. The attackers were shot dead by police. Reporting from Jerusalem, here is Kevin Kanlly.以⾊列总理内塔尼亚胡号召以⾊列⼈民团结⼀致，确切⾏驶起其⼿中的权⼒。
这⼀讲话发表在两名巴勒斯坦⼈持枪和⼤⼑袭击耶路撒冷和Sinigal袭击杀害4名犹太信徒之后。
袭击者最后被警⽅击毙。
下⾯是本⽥记者从耶路撒冷发回的报道。
In keeping with the traditions of the ultra-orthodox use of Jerusalem, the men who were murdered in the morning would be buried before the early winter sunset. Television images of the grave striker and mourners will deep their sense of revoltion in Israel. The killing of a man in a place of worship. Benjamin Netanyahu referring other recent attacks on both Jewish soldiers and civilians, said Jerusalem was facing a continuing onslaught of terror. Barack Obama noting that the Palestinian leader Mahmoud Abbas had condemned the murders, warned the attack represented a kind of extremism which could tip the Middle East into a downward spiral from which he will be difficult to immerge.遇害者将受到耶路撒冷正统派传统埋葬仪式在冬⽇太阳落⼭之前进⾏。
贴片二极管封装
贴片二极管封装贴片二极管封装图：贴片二极管封装图一贴片二极管封装图二贴片二极管封装：电子元件技术网相信有些网友在画AVR开发板的PCB时会遇到一个这样的问题，板子上有两个贴片二极管的封装无法确定，分别是1N4001和4148的。
元件上周我已经出去买回来了，我是第一次用贴片二极管，第一次见的时候居然分不清到底哪个是4001，哪个是4148，不得不问卖片子的那家，老板说，大的标着M1的是 4001，小的标着W2的是4148。
其实吧，要是想简单的话，直接拿个尺子量一量，直接在protel上画封装就行了，不过我没有尺子，手头上的直尺还是借对门的，件太小，不好动手量，我认真的劲又犯了，就是想找到这种贴片二极管的标准封装名称及相关数据手册，然后根据标准来画自己的封装库，可以先查了一下花了一个小时时间，确定与贴片二极管有关的封装信息如下，前面几个我可以确定，后边的详细资料我没查：SMA / SMB / SMC / MELF / MINI-MELF / DFS / MINI-DFS /SKY / SF / HER / FR / STD / TVS / SWITCH / ZEMER / DIACES标准封装：SMA <---------------->2010SMB <---------------->2114SMC <---------------->3220SOD123 <---------------->1206SOD323 <---------------->0805SOD523 <---------------->0603还有四种封装名称：DO-214AADO-214ABDO-214ACDO-213AB<-------------->MELF现在IN4007插件（DO-41 DIP）、贴片（DO-214AC也就是SMA）都有。
德昌代理TC 全系器件选型附规格书
1
200 100
1
100 100
0.72
100 100
0.72
100 100
1
100 100
1
100 100
0.72
100 100
0.72
250 100
1
250 100
1
200 100
1
100 100
0.72
200 100
1
200 100
1
250 100
1
100 100
0.72
120 100
1
120 100
5
1
10
1500 65
200
200
Package Outline SOD-323G SOD-323G SOD-323G SOD-123G SOD-882 SOD-323G SOD-123G TO-220 SOD-323G SOD-123G SOD-882 SOD-323 SOD-523 SOD-323G SOD-123G SOD-882 TO-220 LL-34 DO-35 DO-35 Package Outline DO-35 SOD-523 TO-220 TO-220
75
4
150
50
150
50
200
50
75
4
100
50
100
50
80
4
IR VR
trr
(V)
(ns)
75
4
75
4
75
4
75
4
Package Outline SOD-123 SOD-123 SOD-123 SOD-123 SOD-123 SOD-323 SOD-123 SOD-323 SOD-323 SOD-323G SOD-123G SOD-323 DO-35 SOD-323G SOD-123G SOD-323 DO-35 SOD-323G SOD-123G SOD-323 Package Outline DO-35 SOD-323G SOD-123G SOD-882
hobby高级英语PPT
Cultivating a Hobby
Group Members: Duan Chen-xi He Yao Li Ang Liu Chun-xiao Sun Chan
Introduction of Winston Churchill
• Sir Winston Leonard Spencer-Churchill (30 November 1874 – 24 January 1965) was a British politician and statesman known for his leadership of the United Kingdom during the Second World War.He is widely regarded as one of the great wartime leaders. He served as prime minister twice (1940–45 and 1951–55). A noted statesman and orator, Churchill was also an officer in the British Army, a historian, writer, and an artist. To date, he is the only British prime minister to have received the Nobel Prize in Literature, and the first person to be recognised as an honorary citizen of the United States.
• He spent much of the next few years concentrating on his writing, including Marlborough: His Life and Times—a biography of his ancestor John Churchill, 1st Duke of Marlborough—and A History of the English Speaking Peoples，Great Contemporaries and many newspaper articles and collections of speeches. He was one of the best paid writers of his time.His political views, set forth in his 1930 Romanes Election and published as Parliamentary Government and the Economic Problem (republished in 1932 in his collection of essays "Thoughts and Adventures") involved abandoning universal suffrage（普选权）, a return to a property franchise, proportional representation （比例代表制）for the major cities and an economic sub parliament'
长电开关二极管SOD-323封装规格书
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate DiodesBAV16WS/1N4148WS FAST SWITCHING DIODEFEATURESMARKING: T6, T4Maximum Ratings and Electrical Characteristics, Single Diode @T a =25℃Parameter SymbolLimitUnitNon-Repetitive Peak R everse V oltage V RM 100 V Peak Repetitive Peak R everse V oltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R100 VRMS Reverse Voltage V R(RMS) 71 VForward Continuous Current I FM 300mA Average Rectified Output Current I O 150 mA Peak F orward S urge C urrent @t =1.0μs@t =1.0s I FSM2.0 1.0APower DissipationPd 200 mW Thermal Resistance Junction to AmbientR θJA625 ℃/WJunction T emperature T j 150 Storage T emperatureT STG -55~+150℃ Electrical Ratings @T a =25℃ParameterSymbol MinTypMaxUnit Conditions V F1 0.715V I F =1mA V F2 0.855VI F =10mA V F3 1.0 V I F =50mA Forward voltageV F4 1.25 VI F =150mAI R1 1 μA V R =75V Reverse currentI R2 25 nA V R =20V Capacitance between terminals C T2 pF V R =0V,f=1MHz Reverse r ecovery t imet rr4 ns I F =I R =10mA Irr=0.1XI R ,R L =100ΩSOD-323℃2550751001251500.010.111010051015200.81.01.2Reverse CharacteristicsAMBIENT TEMPERATURE T a ()℃1N4148WSTypical CharacteristicsF O R W A R D C U R R E N T I F (m A )REVERSE VOLTAGE V R(V)C A P A C I T A N C E B E T W E E N T E R M I N A L S C T (p F )JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes1N4448WS FAST SWITCHING DIODEFEATURES z Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z For General Purpose Switching Applications z High ConductanceMARKING: T5Maximum Ratings and Electrical Characteristics, Single Diode @T a =25℃Parameter SymbolLimitUnitNon-Repetitive Peak R everse V oltage V RM 100 V Peak Repetitive Peak R everse V oltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R75 VRMS Reverse Voltage V R(RMS) 53VForward Continuous Current I FM 500 mAAverage Rectified Output Current I O 250 mA Peak F orward S urge C urrent @t =1.0μs @t =1.0s I FSM4.0 1.5APower DissipationPd 200 mW Thermal Resistance Junction to AmbientR θJA 625 ℃/WStorage T emperature T STG -55~+150 ℃Electrical Ratings @T a =25℃ParameterSymbol MinTypMaxUnitConditionsReverse b reakdown v oltage V (BR)75 V I R =10μA V F1 0.62 0.72 VI F =5mA V F2 0.855VI F =10mA V F3 1.0 V I F =100mA Forward voltageV F4 1.25 VI F =150mAI R1 2.5 μA V R =75V Reverse currentI R2 25 nA V R =20V Capacitance between terminals C T4 pF V R =0V,f=1MHzReverse r ecovery t imet rr4 ns I F =I R =10mA0.60.81.01.21.41.60.1110100REVERSE VOLTAGE V R (V)C A P A C I T A N C E B E T W E E N T E R M I N A L S C T (p F )AMBIENT TEMPERATURE T a ()℃0.3330300F O R W A R D C U R R E N T I F (m A )1N4448WSTypical CharacteristicsJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes1SS355 FAST SWITCHING DIODEFEATURES1) Small surface mounting type 2) High speed3) High reliability with high surge current handling capabilityMARKING: AMaximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃Parameter SymbolLimitUnitNon-repetitive peak reverse voltage V RM 90 VDC blocking voltage V R 80 V Peak forword currentI FM 225 mAAverage rectified output current I O 100mA Surge current (@t=1s) I surge 500 mA Junction temperature Tj 150 ℃ Storage temperatureT STG -55~+150 ℃Electrical Ratings @T a =25℃ParameterSymbol MinTypMaxUnitConditions Forward voltage V F1.2 V I F =100mA Reverse currentI R0.1 µA V R =80VCapacitance between terminalsC T3 pF V R =0.5V,f=1MHz Reverse r ecovery t ime t rr4 ns I F =10mA ,V R =6V,R L =100Ω2550751001251500.010.111010051015200.81.01.2AMBIENT TEMPERATURE Ta ()℃ 1SS355Typical CharacteristicsF O R W A R D C U R R E N T I F (m A )REVERSE VOLTAGE V R(V)C A P A C I T A N C E B E T W E E N T E R M I N A L S C T (p F )A,Jun,2012JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate DiodesBAS16WX HIGH-SPEED SWITCHING DIODEFEATURES z Fast Switching Speedz For General Purpose Switching Applications z High ConductanceMARKING: T4MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )Symbol Parameter Value Unit V RM Non-Repetitive Peak Reverse Voltage 85VV RRM V RWM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage 75 VV R(RMS)RMS Reverse Voltage 53 V I OForward Current100mAP D Power Dissipation 200 mW R θjA Thermal Resistance from Junction to Ambient 625 ℃/W T JJunction Temperature150℃ T stg Storage Temperature-55~+150℃ELECTRICAL CHARACTERISTICS(T a =25℃ unless otherwise specified)Parameter Symbol Test conditions Min Typ Max UnitReverse voltageV (BR)I R =10μA 75 VI F =1mA 0.715I F =10mA0.855I F =50mA 1 Forward voltageV FI F =150mA1.25VReverse current I R V R =75V 1 μA Total capacitance C tot V R =0V,f =1MHz 2 pFReverse recovery timet rrI F = I R =10mA, I rr =0.1×I R,R L =100Ω6 nsJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate DiodesBAS316 SWITCHING DIODEFEATURES● Very Small Plastic Package ● High Switching Speed APPLICATIONS● High-Speed Switching in e.g. Surface Mounted CircuitsMARKING: A6·MAXIMUM RATINGS ( T a =25℃ unless otherwise noted )Symbol ParameterValue Unit V RRM Peak Repetitive Reverse Voltage 85 V R DC Blocking Voltage 75 V I O Continuous Forward Current 250 mA P D Power Dissipation250 mW R θJA Thermal Resistance from Junction to Ambient 500 ℃/W T j Junction Temperature 150 ℃ T stgStorage Temperature-55~+150℃ELECTRICAL CHARACTERISTICS(Ta =25℃ unless otherwise specified)ParameterSymbol Test conditionsMin Typ Max Unit Reverse voltage V (BR) I R =100μA 100 V V R =25V 30 nA Reverse currentI RV R =75V 1 μAI F =1mA0.715 I F =10mA 0.855 I F =50mA 1 Forward voltageV FI F =150mA1.25 V Total capacitance C tot V R =0V,f=1MHz 1.5 pF Reverse recovery time t rrI F = I R =10mA, I rr =0.1×I R4nsSOD-3232550751001251500501001502002503000.00.20.40.60.81.01.220406080110100100010000Power Derating CurveP O W E R D I S S I P A T I O N P D (m W )AMBIENT TEMPERATURE T a ()℃BAS316Typical CharacteristicsF O R W A R D C U R R E N T I F (m A )FORWARD VOLTAGE V F (V)R E V E R S E C U R R E N T I R (n A )REVERSE VOLTAGE V R (V)REVERSE VOLTAGE V R(V)C A P A C I T A N C E B E T W E E N T E R M I N A L S C T (p F )JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDSOD-323 Plastic-Encapsulate DiodesBAV19WS~BAV21WS SWITCHING DIODEFEATURESz Low Reverse Currentz Surface Mount Package Ideally Suited for Automatic Insertionz Fast Switching Speedz For General Purpose Switching ApplicationsMARKING:BAV19WS: A8BAV20WS: T2BAV21WS: T3MAXIMUM RATINGS ( T a=25℃unless otherwise noted )Value Symbol ParameterBAV19WS BAV20WS BAV21WSUnit V RM Non-Repetitive Peak Reverse Voltage 120 200 250 VV RRM Peak Repetitive Reverse Voltage V RWM Working Peak Reverse Voltage 100 150 200VV R(RMS)RMS Reverse Voltage 71 106 141 VI O Average Rectified Output Current 200 mAI FSM Non-repetitive Peak Forward Surge Current @ t=8.3ms 1.7 AP D Power Dissipation 250 mWRΘJA Thermal Resistance from Junction to Ambient 500 ℃/WT j Junction Temperature 150 ℃T stg Storage Temperature -55~+150 ℃ELECTRICAL CHARACTERISTICS(T a=25℃unless otherwise specified)Parameter Symbol Testconditions MinTyp Max UnitV R=100V BAV19WS0.1V R=150V BAV20WS0.1Reverse current I RV R=200V BAV21WS0.1uAI F=100mA1Forward voltage V FI F=200mA1.25VTotal capacitance C tot V R=0V,f=1MHz5 pF Reverse recovery time t rr I F= I R =30mA, I rr=0.1*I R50 ns25507510012515011010051015200.40.60.81.01.21.4Forward CharacteristicsReverse CharacteristicsAMBIENT TEMPERATURE Ta ()℃400BAV19WSTypical Characteristics303F O R W A R D C U R R E N T I F (m A )REVERSE VOLTAGE V R(V)C A P A C I T A N C E B E T W E E N T E R M I N A L S C T (p F )B,Sep,2013。
FOSAN富信电子 二级管 BAV19WS-BAV21WS-产品规格书
安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAV19WS-BAV21WS SOD-323Switching Diode开关二极管■Features特点Fast Switching Speed快的开关速度Surface mount device表面贴装器件High Conductance高电导率Case封装:SOD-323■Maximum Rating最大额定值(T A=25℃unless otherwise noted如无特殊说明，温度为25℃)Characteristic特性参数Symbol符号BAV19WS BAV20WS BAV21WS Unit单位Peak Reverse Voltage反向峰值电压V RRM120200250VDC Reverse Voltage直流反向电压V R120200250V RMS Reverse Voltage反向电压均方根值V R(RMS)100150200V Forward Rectified Current正向整流电流I F0.25A@1SPeak Surge Current峰值浪涌电流@1mS@1µS I FSM139APower Dissipation耗散功率P D200mW Thermal Resistance J-A结到环境热阻RθJA625℃/W Junction/Storage Temperature结温/储藏温度T J,T stg-50to+150℃℃■Electrical Characteristics电特性(T A=25℃unless otherwise noted如无特殊说明，温度为25℃)Characteristic特性参数Symbol符号BAV19WS BAV20WS BAV21WS Unit单位Condition条件Reverse Voltage反向电压V R120200250V I R=1mA Forward Voltage正向电压V F 1.25V I F=0.2A Reverse Current反向电流I R0.1µA V R=V RRM Reverse Recovery Time Trr50nSDiode Capacitance二极管电容C T5pF V R=4V,f=1MHzANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAV19WS-BAV21WS ■Typical Characteristic Curve典型特性曲线ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.BAV19WS-BAV21WS ■Dimension外形封装尺寸SOD-323。