NP32N055ILE

The information in this document is subject to change without notice. Before using this document, pleaseconfirm that this is the latest version.Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.DATA SHEETDocument No. D14137EJ5V0DS00 (5th edition)Date Published July 2005 NS CP(K) Printed in Japan1999, 2005The mark shows major revised points.DESCRIPTIONThese products are N-channel MOS Field EffectTransistor designed for high current switching applications.FEATURES• Channel temperature 175 degree rating • Super low on-state resistanceR DS(on)1 = 24 m Ω MAX. (V GS = 10 V, I D = 16 A) R DS(on)2 = 29 m Ω MAX. (V GS = 5.0 V, I D = 16 A) • Low Ciss : Ciss = 1300 pF TYP.• Built-in gate protection diodeABSOLUTE MAXIMUM RATINGS (T A = 25°C)Drain to Source Voltage (V GS = 0 V) V DSS 55 VGate to Source Voltage (V DS = 0 V) V GSS ±20 V Drain Current (DC) I D(DC) ±32 A Drain Current (pulse)Note1I D(pulse) ±100 A Total Power Dissipation (T A = 25°C) P T 1.2 W Total Power Dissipation (T C = 25°C) P T 66 W Channel Temperature T ch 175 °C Storage Temperature T stg−55 to +175 °C Single Avalanche CurrentNote2I AS 28 / 21 / 8 A Single Avalanche EnergyNote2E AS7.8 / 44 / 64mJNotes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting T ch = 25°C, R G = 25 Ω, V GS = 20 → 0 V (See Figure 4.)THERMAL RESISTANCEChannel to Case Thermal ResistanceR th(ch-C) 2.27 °C/WChannel to Ambient Thermal Resistance R th(ch-A) 125 °C/WORDERING INFORMATIONPART NUMBER PACKAGENP32N055HLE TO-251 (JEITA) / MP-3 NP32N055ILENoteTO-252 (JEITA) / MP-3Z NP32N055SLETO-252 (JEDEC) / MP-3ZKNote Not for new design.(TO-251)(TO-252)Data Sheet D14137EJ5V0DS2ELECTRICAL CHARACTERISTICS (T A = 25°C)CHARACTERISTICS SYMBOLTEST CONDITIONS MIN. TYP. MAX. UNITZero Gate Voltage Drain Current I DSS V DS = 55 V, V GS = 0 V 10 µA Gate Leakage CurrentI GSS V GS = ±20 V, V DS = 0 V±10µAGate to Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 1.5 2 2.5 V Forward Transfer AdmittanceNote| y fs |V DS = 10 V, I D = 16 A 8 16 S Drain to Source On-state Resistance NoteR DS(on)1 V GS = 10 V, I D = 16 A 19 24 m Ω R DS(on)2 V GS = 5.0 V, I D = 16 A 22 29m ΩR DS(on)3 V GS = 4.5 V, I D = 16 A 24 33 m Ω Input Capacitance C iss V DS = 25 V 1300 2000 pF Output CapacitanceC oss V GS = 0 V 180 270 pF Reverse Transfer Capacitance C rss f = 1 MHz90 160 pF Turn-on Delay Time t d(on) V DD = 28 V, I D = 16 A 14 31 ns Rise Timet r V GS = 10 V820nsTurn-off Delay Time t d(off)R G = 1 Ω40 81 ns Fall Timet f 7.4 19 ns Total Gate Charge Q G1 V DD = 44 V, V GS = 10 V, I D = 32 A 27 41 nCQ G2 V DD = 44 V 15 23 nC Gate to Source Charge Q GS V GS = 5.0 V 5 nC Gate to Drain Charge Q GDI D = 32 A9 nC Body Diode Forward Voltage NoteV F(S-D) I F = 32 A, V GS = 0 V 1.0 V Reverse Recovery Time t rr I F = 32 A, V GS = 0 V41nsReverse Recovery ChargeQ rrdi/dt = 100 A/µs58 nCNote PulsedV GS = 20 TEST CIRCUIT 1 AVALANCHE CAPABILITYL DDTEST CIRCUIT 2 SWITCHING TIMEData Sheet D14137EJ5V0DS3TYPICAL CHARACTERISTICS (T A = 25°C)Figure1. DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREAd T - Pe r c e n t a g e of R a t e d P o w e r - %0025507510012515017520020406080100T C - Case T emperature - ˚CFigure2. TOTAL POWER DISSIPATION vs. CASE TEMPERATURET C - Case Temperature - ˚CP T - T o t a l P o w e r D i s s i p a t i o n - W0025507510012515017520070605040302010Figure3. FORWARD BIAS SAFE OPERATING AREA V DS - Drain to Source Voltage - VI D - D r a i n C u r r e n t - AFigure4. SINGLE AVALANCHE ENERGY DERATING FACTORStarting T ch - Starting Channel Temperature - ˚CS i n g l e P u l s e A v a l a n c h e E n e r g y - m JData Sheet D14137EJ5V0DS4Figure6. FORWARD TRANSFER CHARACTERISTICS V GS - Gate to Source Voltage - VI D - D r a i n C u r r e n t - A10.10.01101001.02.03.04.06.05.0Figure7. DRAIN CURRENT vs.DRAIN TO SOURCE VOLTAGEV DS - Drain to Source Voltage - VI D - Dr a i n C u r r e n t - AFigure8. FORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENTI D - Drain Current - A | y f s | - F o r w a r d T r a n s f e r A d m i t t a n c e -S101001Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE V GS - Gate to Source Voltage - VR D S (o n ) - D r a i n t o S o u r c e O n -s ta t e R e s i s t a n c e - m Ω10203040Figure10. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENTI D - Drain Current - A R D S (o n ) - D r a i n t o S o u r c e O n -s t a t e R e s is t a n c e - m Ω01020304050607080Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE T ch - Channel Temperature - ˚CV G S (t h ) - G a t e t o S o u r c e T h r e s h o l d V o l t a g e - VV DS = V GSI D = 250 A1.02.03.0µ−50050100150Data Sheet D14137EJ5V0DS5T ch - Channel Temperature - ˚CFigure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE R D S (o n ) - D r a i n t o S o u r c e O n -s t a t e R e s i s t a n c e - m Ω103040506050Figure13. SOURCE TO DRAIN DIODE FORWARD VOLTAGEI S D - D i o d e F o r w a r d C u r re n t - AV SD - Source to Drain Voltage - V00.5 1.0 1.5Figure14. CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE V DS - Drain to Source Voltage - VC i s s , C o s s , C r s s - C a p a c i t a n c e- p FFigure15. SWITCHING CHARACTERISTICS I D - Drain Current - At d (o n ), t r , t d (o f f ), t f - S w i t c h i n g Ti m e - n sFigure16. REVERSE RECOVERY TIME vs. DRAIN CURRENT I F - Drain Current - At r r - R e v e r s e R e c o v e r y T i m e - n sdi/dt = 100 A/µs V GS = 0 V10.1101.0101001000100Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS V G S - G a t e t o S o u r c e V o l t a g e - VQ G - Gate Charge - nCV D S - D r a i n t o S o u r c e V o l t a g e - V204060802468Data Sheet D14137EJ5V0DS6PACKAGE DRAWINGS (Unit: mm)EQUIVALENT CIRCUITBody DiodeDiodeRemark The diode connected between the gate and source of the transistor serves as a protector against ESD.When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.The information in this document is current as of July, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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