IC41C16105S-60TI中文资料

ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc..EATURESTTL compatible inputs and outputs; tristate I/O Refresh Interval: 1,024 cycles/16 ms,1,024 cycles / 128ms Self RefreshRefresh Mode: RAS -Only, CAS -before-RAS (CBR),Hidden, and Self Refresh JEDEC standard pinout Single power supply:5V ± 10% (IC41C16105S) 3.3V ± 10% (IC41LV16105S)Byte Write and Byte Read operation via two CAS Industrail temperature range -40o C to 85o CDESCRIPTIONThe 1+51 IC41C16105S and IC41LV16105S are 1,048,576 x16-bit high-performance CMOS Dynamic Random Access Memories. .ast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte,makes the IC41C16105S ideal for use in 16-, 32-bit wide data bus systems.These features make the IC41C16105S and IC41LV16105S ideally suited for high-bandwidth graphics, digital signal processing, high-performance computing systems, and peripheral applications.The IC41C16105S and IC41LV16105S are packaged in a 42-pin 400mil SOJ and 400mil 44- (50-) pin TSOP-2.IC41C16105S IC41LV16105S1M x 16(16-MBIT) DYNAMIC RAM WITH .AST PAGE MODEKEY TIMING PARAMETERSParameter-50-60Unit Max. RAS Access Time (t RAC )5060ns Max. CAS Access Time (t CAC )1315ns Max. Column Address Access Time (t AA )2530ns Min. .ast Page Mode Cycle Time (t PC )2025ns Min. Read/Write Cycle Time (t RC )84104nsPIN CON.IGURATIONSPIN DESCRIPTIONSA0-A9Address Inputs I/O0-15Data Inputs/Outputs WE Write Enable OE Output Enable RAS Row Address StrobeUCAS Upper Column Address Strobe LCAS Lower Column Address Strobe Vcc Power GND Ground NCNo ConnectionIntegrated Circuit Solution Inc.1DR011-0A 05/23/2001IC41C16105SIC41LV16105SDR011-0A 05/23/2001IC41C16105S IC41LV16105SIntegrated Circuit Solution Inc.3DR011-0A 05/23/2001TRUTH TABLE.unction RAS LCAS UCAS WE OE Address t R /t CI/O Standby H H H X X X High-Z Read: WordL L L H L ROW/COL D OUTRead: Lower Byte L L H H L ROW/COL Lower Byte, D OUT Upper Byte, High-Z Read: Upper ByteL H L H L ROW/COL Lower Byte, High-Z Upper Byte, D OUT Write: Word (Early Write)L L L L X ROW/COL D INWrite: Lower Byte (Early Write)L L H L X ROW/COL Lower Byte, D INUpper Byte, High-Z Write: Upper Byte (Early Write)L H L L X ROW/COL Lower Byte, High-Z Upper Byte, D IN Read-Write (1,2)L L L H ®L L ®H ROW/COL D OUT , D IN Hidden Refresh Read (2)L ®H ®L L L H L ROW/COL D OUT Write (1,3)L ®H ®LL L L X ROW/COL D OUT RAS -Only Refresh L H H X X ROW/NAHigh-Z CBR Refresh (4)H ®LLLXXXHigh-ZNotes:1.These WRITE cycles may also be BYTE WRITE cycles (either LCAS or UCAS active).2.These READ cycles may also be BYTE READ cycles (either LCAS or UCAS active).3.EARLY WRITE only.4.At least one of the two CAS signals must be active (LCAS or UCAS ).IC41C16105S IC41LV16105S4Integrated Circuit Solution Inc.DR011-0A 05/23/2001.unctional DescriptionThe IC41C16105S and IC41LV16105S is a CMOS DRAM optimized for high-speed bandwidth, low power applications. During READ or WRITE cycles, each bit is uniquely addressed through the 10 address bits. These are entered ten bits (A0-A9) at a time. The row address is latched by the Row Address Strobe (RAS ). The column address is latched by the Column Address Strobe (CAS ).RAS is used to latch the first ten bits and CAS is used the latter ten bits.The ICS41C16105S and IC41LV16105S has two CAS controls, LCAS and UCAS . The LCAS and UCAS inputs internally generates a CAS signal functioning in an iden-tical manner to the single CAS input on the other 1M x 16DRAMs. The key difference is that each CAS controls its corresponding I/O tristate logic (in conjunction with OE and WE and RAS ). LCAS controls I/O0 through I/O7 and UCAS controls I/O8 through I/O15.The IC41C16105S and IC41LV16105S CAS function is determined by the first CAS (LCAS or UCAS ) transitioning LOW and the last transitioning back HIGH. The two CAS controls give the IS41C16105L and IS41LV16105L both BYTE READ and BYTE WRITE cycle capabilities.Memory CycleA memory cycle is initiated by bring RAS LOW and it is terminated by returning both RAS and CAS HIGH. To ensures proper device operation and data integrity any memory cycle, once initiated, must not be ended or aborted before the minimum t RAS time has expired. A new cycle must not be initiated until the minimum precharge time t RP , t CP has elapsed.Read CycleA read cycle is initiated by the falling edge of CAS or OE ,whichever occurs last, while holding WE HIGH. The column address must be held for a minimum time specified by t AR . Data Out becomes valid only when t RAC , t AA , t CAC and t OEA are all satisfied. As a result, the access time is dependent on the timing relationships between these parameters.Write CycleA write cycle is initiated by the falling edge of CAS and WE ,whichever occurs last. The input data must be valid at or before the falling edge of CAS or WE , whichever occurs last.Refresh CycleTo retain data, 1,024 refresh cycles are required in each 16 ms period. There are two ways to refresh the memory.1.By clocking each of the 1,024 row addresses (A0through A9) with RAS at least once every 16 ms. Any read, write, read-modify-write or RAS -only cycle re-freshes the addressed row.ing a CAS -before-RAS refresh cycle. CAS -before-RAS refresh is activated by the falling edge of RAS ,while holding CAS LOW. In CAS -before-RAS refresh cycle, an internal 10-bit counter provides the row addresses and the external address inputs are ignored.CAS -before-RAS is a refresh-only mode and no data access or device selection is allowed. Thus, the output remains in the High-Z state during the cycle.Self Refresh CycleThe Self Refresh allows the user a dynamic refresh, data retention mode at the extended refresh period of 128 ms.i.e., 125 µs per row when using distributed CBR refreshes.The feature also allows the user the choice of a fully static,low power data retention mode. The optional Self Refresh feature is initiated by performing a CBR Refresh cycle and holding RAS LOW for the specified t RAS .The Self Refresh mode is terminated by driving RAS HIGH for a minimum time of t RP . This delay allows for the completion of any internal refresh cycles that may be in process at the time of the RAS LOW-to-HIGH transition. If the DRAM controller uses a distributed refresh sequence,a burst refresh is not required upon exiting Self Refresh.However, if the DRAM controller utilizes a RAS -only or burst refresh sequence, all 1,024 rows must be refreshed within the average internal refresh rate, prior to the re-sumption of normal operation.Power-OnAfter application of the V CC supply, an initial pause of 200 µs is required followed by a minimum of eight initial-ization cycles (any combination of cycles containing a RAS signal).During power-on, it is recommended that RAS track with V CC or be held at a valid V IH to avoid current surges.IC41C16105S IC41LV16105SIntegrated Circuit Solution Inc.5DR011-0A 05/23/2001ABSOLUTE MAXIMUM RATINGS (1)Symbol ParametersRating Unit V T Voltage on Any Pin Relative to GND 5V 1.0 to +7.0V 3.3V 0.5 to +4.6V CC Supply Voltage5V 1.0 to +7.0V 3.3V0.5 to +4.6I OUT Output Current 50mA P D Power Dissipation1W T A Commercial Operation Temperature 0 to +70°C Industrail Operation Temperature 40 to +85°C T STGStorage Temperature55 to +125°CNote:1.Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)Symbol Parameter Min.Typ.Max.Unit V CC Supply Voltage 5V 4.5 5.0 5.5V 3.3V 3.0 3.3 3.6V IH Input High Voltage 5V 2.4 V CC + 1.0V 3.3V 2.0 V CC + 0.3V IL Input Low Voltage5V 1.0 0.8V 3.3V0.3 0.8T ACommercial Ambient Temperature 0 70°C Industrail Ambient Temperature4085°CCAPACITANCE (1,2)Symbol ParameterMax.Unit C IN 1Input Capacitance: A0-A95p.C IN 2Input Capacitance: RAS , UCAS , LCAS , WE , OE 7p.C IOData Input/Output Capacitance: I/O0-I/O157p.Notes:1. Tested initially and after any design or process changes that may affect these parameters.2. Test conditions: T A = 25°C, f = 1 MHz,IC41C16105S IC41LV16105S6Integrated Circuit Solution Inc.DR011-0A 05/23/2001ELECTRICAL CHARACTERISTICS (1)(Recommended Operating Conditions unless otherwise noted.)Symbol ParameterTest ConditionSpeedMin.Max.Unit I IL Input Leakage Current Any input 0V < V IN < Vcc55µA Other inputs not under test = 0V I IO Output Leakage Current Output is disabled (Hi-Z) 55µA 0V < V OUT < Vcc V OH Output High Voltage Level I OH = 5.0 mA (5V) 2.4 V I OH = 2.0 mA (3.3V)V OL Output Low Voltage Level I OL = 4.2 mA (5V) 0.4VI OL = 2.0 mA (3.3V)I CC 1Standby Current: TTLRAS , LCAS , UCAS > V IH Commerical5V 2mA 3.3V1Extended & Idustrial 5V3mA 3.3V2I CC 2Standby Current: CMOS RAS , LCAS , UCAS > V CC 0.2V 5V 1mA 3.3V 0.5I CC 3Operating Current:RAS , LCAS , UCAS ,-50 160mARandom Read/Write (2,3,4)Address Cycling, t RC = t RC (min.)-60 145Average Power Supply Current I CC 4Operating Current:RAS = V IL , LCAS , UCAS ,-50 90mA.ast Page Mode (2,3,4)Cycling t PC = t PC (min.)-60 80Average Power Supply Current I CC 5Refresh Current:RAS Cycling, LCAS , UCAS > V IH -50 160mARAS -Only (2,3)t RC = t RC (min.)-60 145Average Power Supply Current I CC 6Refresh Current:RAS , LCAS , UCAS Cycling -50 160mACBR (2,3,5)t RC = t RC (min.)-60 145Average Power Supply Current I CCS Self Refresh CurrentSelf Refresh mode5V 650µA3.3V300Notes:1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycles (RAS -Only or CBR) before proper device operation is assured. The eight RAS cycles wake-up should be repeated any time the t RE. refresh requirement is exceeded.2. Dependent on cycle rates.3. Specified values are obtained with minimum cycle time and the output open.4. Column-address is changed once each .ast page cycle.5. Enables on-chip refresh and address counters.IC41C16105S IC41LV16105SIntegrated Circuit Solution Inc.7DR011-0A 05/23/2001AC CHARACTERISTICS (1,2,3,4,5,6)(Recommended Operating Conditions unless otherwise noted.)-50-60Symbol ParameterMin.Max.Min.Max.Units t RC Random READ or WRITE Cycle Time 84 104 ns t RAC Access Time from RAS (6, 7) 50 60ns t CAC Access Time from CAS (6, 8, 15)13 15ns t AA Access Time from Column-Address (6) 25 30ns t RAS RAS Pulse Width 5010K 6010K ns t RP RAS Precharge Time 30 40 ns t CAS CAS Pulse Width (26)810K 1010K ns t CP CAS Precharge Time (9, 25)9 9 ns t CSH CAS Hold Time (21)38 40 ns t RCD RAS to CAS Delay Time (10, 20)12371445ns t ASR Row-Address Setup Time 0 0 ns t RAH Row-Address Hold Time8 10 ns t ASC Column-Address Setup Time (20)0 0 ns t CAH Column-Address Hold Time (20)8 10 ns t AR Column-Address Hold Time 30 40 ns (referenced to RAS )t RAD RAS to Column-Address Delay Time (11)10251230ns t RAL Column-Address to RAS Lead Time 25 30 ns t RPC RAS to CAS Precharge Time 5 5 ns t RSH RAS Hold Time (27)8 10 ns t RHCP RAS Hold Time from CAS Precharge 37 37 ns t CLZ CAS to Output in Low-Z (15, 29)0 0 ns t CRP CAS to RAS Precharge Time (21)5 5 ns t OD Output Disable Time (19, 28, 29)315315ns t OE Output Enable Time (15, 16)13 15ns t OED Output Enable Data Delay (Write)20 20 ns t OEHC OE HIGH Hold Time from CAS HIGH 5 5 ns t OEP OE HIGH Pulse Width10 10 ns t OES OE LOW to CAS HIGH Setup Time 5 5 ns t RCS Read Command Setup Time (17, 20)0 0 ns t RRH Read Command Hold Time 0 0 ns (referenced to RAS )(12)t RCH Read Command Hold Time 0 0 ns (referenced to CAS )(12, 17, 21)t WCH Write Command Hold Time (17, 27)8 10 ns t WCR Write Command Hold Time 40 50 ns (referenced to RAS )(17)t WP Write Command Pulse Width (17)8 10 ns t WPZ WE Pulse Widths to Disable Outputs 10 10 ns t RWL Write Command to RAS Lead Time (17)13 15 ns t CWL Write Command to CAS Lead Time (17, 21)8 10 ns t WCS Write Command Setup Time (14, 17, 20)0 0 ns t DHRData-in Hold Time (referenced to RAS )3939nsIC41C16105S IC41LV16105S8Integrated Circuit Solution Inc.DR011-0A 05/23/2001AC CHARACTERISTICS (Continued)(1,2,3,4,5,6)(Recommended Operating Conditions unless otherwise noted.)-50-60Symbol ParameterMin.Max.Min.Max.Units t ACH Column-Address Setup Time to CAS 15 15 ns Precharge during WRITE Cycle t OEH OE Hold Time from WE during 8 10 ns READ-MODI.Y-WRITE cycle (18)t DS Data-In Setup Time (15, 22)0 0 ns t DH Data-In Hold Time (15, 22)8 10 ns t RWC READ-MODI.Y-WRITE Cycle Time 108 133 ns t RWD RAS to WE Delay Time during 64 77 ns READ-MODI.Y-WRITE Cycle (14)t CWD CAS to WE Delay Time (14, 20)26 32 ns t AWD Column-Address to WE Delay Time (14)39 47 ns t PC .ast Page Mode READ or WRITE 2025ns Cycle Time (24)t RASP RAS Pulse Width50100K 60100K ns t CPA Access Time from CAS Precharge (15) 30 35ns t PRWC READ-WRITE Cycle Time (24)56 68 ns t COH Data Output Hold after CAS LOW 5 5 ns t O..Output Buffer Turn-Off Delay from 1.6121.615ns CAS or RAS (13,15,19, 29)t WHZ Output Disable Delay from WE 310310ns t CLCH Last CAS going LOW to .irst CAS 10 10 ns returning HIGH (23)t CSR CAS Setup Time (CBR RE.RESH)(30, 20)5 5 ns t CHR CAS Hold Time (CBR RE.RESH)(30, 21)8 10 ns t ORD OE Setup Time prior to RAS during 0 0 ns HIDDEN RE.RESH Cyclet RE.Auto Refresh Period (1,024 Cycles) 16 16ms t TTransition Time (Rise or .all)(2, 3)150150nsAC TEST CONDITIONSOutput load:Two TTL Loads and 50 p. (Vcc = 5.0V ±10%)One TTL Load and 50 p. (Vcc = 3.3V ±10%)Input timing reference levels: V IH = 2.4V, V IL = 0.8V (Vcc = 5.0V ±10%);V IH = 2.0V, V IL = 0.8V (Vcc = 3.3V ±10%)Output timing reference levels: V OH = 2.0V, V OL = 0.8V (Vcc = 5V ±10%, 3.3V ±10%)IC41C16105S IC41LV16105SIntegrated Circuit Solution Inc.9DR011-0A 05/23/2001Notes:1.An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycle (RAS -Only or CBR) before proper deviceoperation is assured. The eight RAS cycles wake-up should be repeated any time the t RE. refresh requirement is exceeded.2.V IH (MIN) and V IL (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between V IHand V IL (or between V IL and V IH ) and assume to be 1 ns for all inputs.3.In addition to meeting the transition rate specification, all input signals must transit between V IH and V IL (or between V IL and V IH )in a monotonic manner.4.If CAS and RAS = V IH , data output is High-Z.5.If CAS = V IL , data output may contain data from the last valid READ cycle.6.Measured with a load equivalent to one TTL gate and 50 p..7.Assumes that t RCD < t RCD (MAX). If t RCD is greater than the maximum recommended value shown in this table, t RAC will increaseby the amount that t RCD exceeds the value shown.8.Assumes that t RCD > t RCD (MAX).9.If CAS is LOW at the falling edge of RAS , data out will be maintained from the previous cycle. To initiate a new cycle and clear thedata output buffer, CAS and RAS must be pulsed for t CP .10.Operation with the t RCD (MAX) limit ensures that t RAC (MAX) can be met. t RCD (MAX) is specified as a reference point only; if t RCDis greater than the specified t RCD (MAX) limit, access time is controlled exclusively by t CAC .11.Operation within the t RAD (MAX) limit ensures that t RCD (MAX) can be met. t RAD (MAX) is specified as a reference point only; if t RADis greater than the specified t RAD (MAX) limit, access time is controlled exclusively by t AA .12.Either t RCH or t RRH must be satisfied for a READ cycle.13.t O.. (MAX) defines the time at which the output achieves the open circuit condition; it is not a reference to V OH or V OL .14.t WCS , t RWD , t AWD and t CWD are restrictive operating parameters in LATE WRITE and READ-MODI.Y-WRITE cycle only. If t WCS > t WCS(MIN), the cycle is an EARLY WRITE cycle and the data output will remain open circuit throughout the entire cycle. If t RWD > t RWD (MIN), t AWD > t AWD (MIN) and t CWD > t CWD (MIN), the cycle is a READ-WRITE cycle and the data output will contain data read from the selected cell. If neither of the above conditions is met, the state of I/O (at access time and until CAS and RAS or OE go back to V IH ) is indeterminate. OE held HIGH and WE taken LOW after CAS goes LOW result in a LATE WRITE (OE -controlled) cycle.15.Output parameter (I/O) is referenced to corresponding CAS input, I/O0-I/O7 by LCAS and I/O8-I/O15 by UCAS .16.During a READ cycle, if OE is LOW then taken HIGH before CAS goes HIGH, I/O goes open. If OE is tied permanently LOW, aLATE WRITE or READ-MODI.Y-WRITE is not possible.17.Write command is defined as WE going low.TE WRITE and READ-MODI.Y-WRITE cycles must have both t OD and t OEH met (OE HIGH during WRITE cycle) in order to ensurethat the output buffers will be open during the WRITE cycle. The I/Os will provide the previously written data if CAS remains LOW and OE is taken back to LOW after t OEH is met.19.The I/Os are in open during READ cycles once t OD or t O.. occur.20.The first ?CAS edge to transition LOW.21.The last ?CAS edge to transition HIGH.22.These parameters are referenced to CAS leading edge in EARLY WRITE cycles and WE leading edge in LATE WRITE or READ-MODI.Y-WRITE cycles.st falling ?CAS edge to first rising ?CAS edge.st rising ?CAS edge to next cycle s last rising ?CAS st rising ?CAS edge to first falling ?CAS edge.26.Each ?CAS must meet minimum pulse st ?CAS to go LOW.28.I/Os controlled, regardless UCAS and LCAS .29.The 3 ns minimum is a parameter guaranteed by design.30.Enables on-chip refresh and address counters.IC41C16105S IC41LV16105S10Integrated Circuit Solution Inc.DR011-0A 05/23/2001READ CYCLENote:1.t O.. is referenced from rising edge of RAS or CAS , whichever occurs last.IC41LV16105SREAD WRITE CYCLE (LATE WRITE and READ-MODI.Y-WRITE Cycles)IC41LV16105SEARLY WRITE CYCLE (OE = DON'T CARE)12Integrated Circuit Solution Inc.IC41LV16105S.AST PAGE MODE READ CYCLEIC41LV16105S.AST PAGE MODE READ WRITE CYCLE (LATE WRITE and READ-MODI.Y-WRITE Cycles)14Integrated Circuit Solution Inc.IC41LV16105S.AST PAGE MODE EARLY WRITE CYCLEAC WAVE.ORMS4)5-ONLY RE.RESH CYCLE (OE, WE = DON'T CARE)IC41LV16105S16Integrated Circuit Solution Inc.+*4 RE.RESH CYCLE (Addresses; WE , OE = DON'T CARE)HIDDEN RE.RESH CYCLE (1) (WE = HIGH; OE = LOW)Notes:1.A Hidden Refresh may also be performed after a Write Cycle. In this case, WE = LOW and OE = HIGH.2.t O.. is referenced from rising edge of RAS or CAS , whichever occurs last.IC41LV16105SORDERING IN.ORMATION: 5V Commercial Range: 0°C to 70°CSpeed (ns)Order Part No.Package 50IC41C16105S-50K 400mil SOJ IC41C16105S-50T 400mil TSOP-260IC41C16105S-60K 400mil SOJ IC41C16105S-60T400mil TSOP-2ORDERING IN.ORMATION: 5VIndustrial Temperature Range: 40°C to 85°CSpeed (ns)Order Part No.Package 50IC41C16105S-50KI 400mil SOJ IC41C16105S-50TI 400mil TSOP-260IC41C16105S-60KI 400mil SOJ IC41C16105S-60TI400mil TSOP-2TIMING PARAMETERS-50-60Symbol Min.Max.Min.Max.Units t CHD 8 10 ns t CP 9 9 ns t CSR 5 5 ns t RASS 100 100 µs t RP 30 40 ns t RPS 84 104 ns t RPC55nsSEL. RE.RESH CYCLE (Addresses : WE and OE = DON'T CARE)IC41LV16105S18Integrated Circuit Solution Inc.Integrated Circuit Solution Inc.HEADQUARTER:NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK,HSIN-CHU, TAIWAN, R.O.C.TEL: 886-3-5780333.ax: 886-3-5783000BRANCH O..ICE:7., NO. 106, SEC. 1, HSIN-TAI 5TH ROAD,HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C.TEL: 886-2-26962140.AX: 886-2-26962252ORDERING IN.ORMATION: 3.3V Commercial Range: 0°C to 70°CSpeed (ns)Order Part No.Package 50IC41LV16105S-50K 400mil SOJ IC41LV16105S-50T 400mil TSOP-260IC41LV16105S-60K 400mil SOJ IC41LV16105S-60T400mil TSOP-2ORDERING IN.ORMATION: 3.3VIndustrial Temperature Range: 40°C to 85°CSpeed (ns)Order Part No.Package 50IC41LV16105S-50KI 400mil SOJ IC41LV16105S-50TI 400mil TSOP-260IC41LV16105S-60KI 400mil SOJ IC41LV16105S-60TI400mil TSOP-2。