DTM4936
家用防盗报警装置设计与制作毕业答辩

• 系统组成 • 功能实现 • 报警方式 • 中央控制 • 程序设计 • 问题分析
目录
2020/5/13
系统组成
2020/5/13
功能实现
• 1. 系统能监控两个地区的盗情; • 2. 当设防的物体被挪动或碰撞时能够检测到震动信号; • 3. 当人体进入监控范围区内能够检测到人体发出的红外线; • 4. 当检测到的信号发送到微控制器时,微控制器能够迅速作出判断
2020/5/13
报警方式-声光报警
2020/5/13
报警方式-拨号语音报警
MT8888
MT8880 是MITEL 公司推出的专门用于处理 DTMF 信号的专用集成电路芯片,不仅具有接收 和发送DTMF信号的自动拨号功能,还可以检测电 话干线上拨号音、回铃音和忙音等信号,适合与 单片机接口,外围电路简单。
单片机的应用
程序设计
2020/5/13
拨号语音报警总流程图
问题分析
• 多路信号检测 • 报警的局限性 • 预存号码 • 节约电能
2020/5/13
2020/5/13
2020/5/13
电话接口部分路
中央控制-单片机
• STC89C51
•
ROM 4K
•
RAM 512B
• I/O口
• 中断
•
外部中断0
•
0003H/EA/EX0/IT0/
• 定时/计数器
•
定时1,计数0
•
TMOD/TR/TL/TH/001BH/
2020/5/13
中央控制-单片机
2020/5/13
ISD1806
语音录放芯片,可录音时间为4~10s,外围 应用电路简单
DTM4946规格书最新版

1Dual N-Channel 60-V (D-S) MOSFETFEATURES•Halogen-free According to IEC 61249-2-21Definition•TrenchFET ® Power MOSFET•175 °C Maximum Junction Temperature •100 % R g Tested•Compliant to RoHS directive 2002/95/ECPRODUCT SUMMARYV DS (V)R DS(on) (Ω)I D (A)Q g (Typ.)600.035 at V GS = 10 V 7.09.2 nC0.040 at V GS = 4.5 V5.8Notes:a.Surface Mounted on 1" x 1" FR4 board.b.t = 10 s.c.Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.d.Maximum under Steady State conditions is 110 °C/W.ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise notedParameterSymbol Limit Unit Drain-Source Voltage V DS 60VGate-Source VoltageV GS± 20Continuous Drain Current (T J = 150 °C)T C = 25 °CI D 7.0A T C = 70 °C 5.5T A = 25 °C 5.3a, b T A = 70 °C4.4a, b Pulsed Drain CurrentI DM 30Continuous Source Drain Diode Current T C = 25 °C I S 3.1T A = 25 °C 2a, b Avalanche CurrentL = 0 1 mH I AS 12Single-Pulse Avalanche EnergyE AS 7.2mJ Maximum Power DissipationT C = 25 °CP D 3.7W T C = 70 °C 2.6T A = 25 °C 2.4a, b T A = 70 °C1.7a, b Operating Junction and Storage T emperature RangeT J , T stg - 55 to 175°C THERMAL RESISTANCE RATINGSParameterSymbol Typical Maximum Unit Maximum Junction-to-Ambient a, c t ≤ 10 s R thJA 5062.5°C/WMaximum Junction-to-Foot (Drain)Steady StateR thJF334123553Q68872黄R1376032电50702Notes:a.Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.b.Guaranteed by design, not subject to production testing.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.SPECIFICATIONS T J = 25 °C, unless otherwise notedParameter Symbol Test Conditions Min.Typ.Max.Unit StaticDrain-Source Breakdown Voltage V DS V GS = 0 V , I D = 250 µA60V V DS Temperature Coefficient ΔV DS /T J I D = 250 µA 53mV/°CV GS(th) Temperature Coefficient ΔV GS(th)/T J - 6.7Gate-Source Threshold Voltage V GS(th) V DS = V GS , I D = 250 µA 1.0 2.43.0VGate-Source LeakageI GSS V DS = 0 V , V GS = ± 20 V ± 100nA Zero Gate Voltage Drain Current I DSS V DS = 60 V, V GS = 0 V 1µA V DS = 60 V , V GS = 0 V, T J = 55 °C10On-State Drain Current aI D(on)V DS ≥ 5 V , V GS = 10 V 30A Drain-Source On-State Resistance a R DS(on)V GS = 10 V , I D = 5.3 A 0.0230.035ΩV GS = 4.5 V , I D = 4.7 A 0.0310.04Forward T ransconductance a g fs V DS = 15 V , I D = 5.3 A24SDynamicbInput Capacitance C iss V DS = 30 V, V GS = 0 V , f = 1 MHz840pFOutput CapacitanceC oss 71Reverse Transfer Capacitance C rss 44Total Gate Charge Q g V DS = 30 V, V GS = 10 V, ID = 5.3 A 1725nCV DS = 30 V , V GS = 5 V, I D = 5.3 A 9.212Gate-Source Charge Q gs 3.3Gate-Drain Charge Q gd 3.7Gate Resistance R g f = 1 MHz3.16.59.5ΩTurn-On Delay Time t d(on) V DD = 30 V , R L = 6.8 Ω I D ≅ 4.4 A, V GEN = 4.5 V , R g = 1 Ω2030nsRise Timet r 120180Turn-Off Delay Time t d(off) 2030Fall Timet f 3045Turn-On Delay Time t d(on) V DD = 30 V , R L = 6.8 ΩI D ≅ 4.4 A, V GEN = 10 V , R g = 1 Ω1015Rise Timet r 1220Turn-Off Delay Time t d(off) 2540Fall Timet f1015Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C3.1A Pulse Diode Forward Current a I SM 30Body Diode VoltageV SD I S = 2 A0.8 1.2V Body Diode Reverse Recovery Time t rr I F = 4.4 A, dI/dt = 100 A/µs, T J = 25 °C2550ns Body Diode Reverse Recovery Charge Q rr 2550nC Reverse Recovery Fall Time t a 18nsReverse Recovery Rise Timet b7On-Resistance vs. Drain Current and Gate VoltageTransfer CharacteristicsCapacitance34TYPICAL CHARACTERISTICS 25°C, unless otherwise notedSource-Drain Diode Forward VoltageThreshold VoltageOn-Resistance vs. Gate-to-Source VoltageSingle Pulse Power, Junction-to-Ambient5TYPICAL CHARACTERISTICS 25°C, unless otherwise noted*The power dissipation P D is based on T J(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.Current Derating*Power, Junction-to-CaseSingle Pulse Avalanche CapabilityTYPICAL CHARACTERISTICS 25°C, unless otherwise notedNormalized Thermal Transient Impedance, Junction-to-Case 61DIM MILLIMETERSINCHESMin Max Min Max A 1.35 1.750.0530.069A 10.100.200.0040.008B 0.350.510.0140.020C 0.190.250.00750.010D 4.80 5.000.1890.196E 3.804.000.1500.157e 1.27 BSC0.050 BSCH 5.80 6.200.2280.244h 0.250.500.0100.020L 0.500.930.0200.037q 0°8°0°8°S0.440.640.0180.026ECN: C-06527-Rev. I, 11-Sep-06DWG: 54981A P P L I C A T I O N N O T ERECOMMENDED MINIMUM PADS FOR SO-8。
DTM系列数字温度计产品选型手册

□外形及安装尺寸
代 号 型 式
D T M -401 D T M -402 D T M -406 D T M -4 11 D T M -412 D T M -416 D T M -481 D T M -482 D T M -486 D T M -491 D T M -492 D T M -591 D T M -592 D T M S-4 0 1 D T M S-4 0 2 D T M S-4 0 6 112 D T M S-4 11 D T M S-4 1 2 D T M S-4 1 6 102 112 140 140 106 106 5 37 5 54 10 24
结构形式
0 )轴向型 2 )径向型 8 )万向型 9 )软管型
表盘公称直径
4 )φ 1 0 0 5 )φ 1 5 0
S 带变送输出 数字式温度计
电话:021-51003361 传真:021-51003362
上海三康仪表有限公司
ቤተ መጻሕፍቲ ባይዱ
网址:
选型样本— DTM 系列数字式温度计
三康仪表
径向型 万向型
□ DTM 温度计主要技术指标
测量 范围:- 3 0 ~ 2 5 0 ℃。 显示方式:3 1 / 2 位液晶显示温度值,超过 2 0 0 ℃量程 自动切换 ,具有低电压、超量程标志显示。 分 辨 力:-30 ~200 ℃为 0.1 ℃,200 ~250 ℃为 1 ℃。 基本误差:± 0 . 5 % F ·S + 1 d b 。 采 样周期:1 秒或 6 秒 。 电 功 材 源:1.5V 5# 电池 1 个。 耗:0.04mW(6 秒采样) ,0.08mW(1 秒采样) 。 质:外壳及固定件等材质均为 1Cr18Ni9Ti 不锈 钢,耐压 6.4MPa 。 软管型 轴向型
飞利浦积极开发嵌入式非易失性存储器

飞利浦积极开发嵌入式非易失性存储器
无
【期刊名称】《电子测试:新电子》
【年(卷),期】2006(000)004
【摘要】飞利浦电子公司(Philips)日前宣布其0.18微米CMOS嵌入式闪存/EEPROM技术现已完全符合Grade-1汽车电子应用的需求,而其先进的0.14微米嵌入式闪存/EEPROM已开始量产。
【总页数】1页(P111)
【作者】无
【作者单位】无
【正文语种】中文
【中图分类】TN492
【相关文献】
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2.飞利浦积极开发嵌入式非易失性存储器产品 [J],
3.BIST电路在嵌入式非易失性存储器可靠性测试中的应用 [J], 安宝森;乔树山;刘琦
4.中星微电子投产采用Kilopass嵌入式非易失性存储器技术的PC-CAM处理器[J],
5.华虹半导体嵌入式非易失性存储器(eNVM)技术解决方案支持MCU [J],
因版权原因,仅展示原文概要,查看原文内容请购买。
DTM 系列智能数字变送保护表

¾ 状态监测接口 -提供传感器的动态缓冲信号。可 使用户快速、方便地将其与在线的或者是便携的 状态监测仪表相连接。
美国派利斯电子(北京)有限公司
3
北京朝阳区南磨房37号华腾北搪商务大厦1905室邮编:100022电话:(010)51908800传真:(010)51908761邮件:china@网址:
DTM9 通讯模块常被使用在 DTM 智能数字变送保护 表总线系统中。系统可高达 32 块 DTM 表,DTM96 可以 直接与上位机(PLC or DCS)进行通讯(Modbus),提 供 DTM 表的数据状态,如报警状态、系统状态、振动 值等。DTM 系统采用积木式模块方式,每个 DTM 模块 自成系统。
缓冲输出: 原始信号的隔离输出
输出阻抗:150Ω
最大传输距离:300米
灵敏度:同传感器
端子:现场BNC接口或接线端子
测量键相时,输出TTL电平信号
总振动输出: 双路4~20mA有源输出,可以驱动500Ω的负载。
报警设置: 报警点设置:
范围:0~100%满量程;
精确度:±0.1%。
报警继电器: 密封:环氧树脂
DTM 系列智能数字变送保护表综述
全数字化 DTM系列智能数字变送保护表是派利斯TM公司在继
承了TM系列单通道变送保护表的优点的基础上,总结 从事振动保护多年的心得,运用微信息处理技术领域 中的最新成果,研制的全数字化的智能变送保护表。
DTM系列智能数字变送保护表将振动保护表、振动 变送表以及振动开关的特性融为一体,采用积木式模 块化设。用户可以根据具体情况,任选一块或几块DTM 数字变送保护表构成DTM振动监测保护系统。DTM数字 变送保护表采用了每个模块自成体系的结构,即每个 模块可以单独进行振动监测,提供单通道保护表的所 有现场组态、控制、输入、输出等功能。
Din-Tek半导体MOSFET产品选型表

尚晶(SunKing-Group)科技股份有限公司是日本Din-Tek(DT)半导体大中华区授权唯一独家分销商,主营Din-Tek半导体全系列产品:DIODES(二极管)产品,有肖特基二极管,快恢复二极管,超快恢复二极管,稳压二极管,整流二极管等;HallSenor(霍尔)产品,有普通霍尔传感器,风扇马达驱动霍尔传感器等;Power management(电源管理)产品,有AC/DC Converter,DC/DC Converter,LDO等;MOSFET(MOS管)产品,结构类型有:N-MOS,P-MOS,双N-MOS,双P-MOS,N+P MOS;封装形式有:SOT-23,TSOP-6,TO-92,SOT-89,SOT-223,TO-251,TO-252,TSSOP-8,SOP-8,TO-220,TO-263,DFN系列;电压范围:8V~750V;广泛应用于:资讯/通讯/工业电子/家用电器/电力电子等行业。
可完全替代:TOSHIBA (东芝)/ROHM(罗姆)/AOS(万代)/ANPEC(茂达)/SAMHOP(三合微)/CEM(华瑞)/Matsuki(松木电机)/APEC(富鼎)等品牌的相应型号!目前市场上常用型号有:一.单N型MOSFET:SOT-23:DTS2300(替代APM2300/SI2300/AO3400等),DTS2302(替代SI2302/AO3414/STS2308等),DTS3400(替代AO3404等),DTS2306,DTS2312,DTS2314,DTS2318;SOP-8:DTM4410(替代AO4410/STM4410/FDS6670A等),DTM4420(替代AO4408/AO4474等);DTM9410(替代AO4430/NDS9410A等);DTM4964,DTM6910P/N Package Configuration BV(V)VGS(V)Vt(V)RDS(ON) Max(Typ)(mΩ)_Vg_2.5vRDS(ON) Max(Typ)(mΩ)_Vg_4.5vRDS(ON) Max(Typ)(mΩ)_Vg_10vID(A)DatasheetDTM4410 SOP-8 Single-N 30 20 1 6.5 4.5 18DTM9410 SOP-8 Single-N 30 20 1.1 45 32 6.8DTM4964 SOP-8 Single-N 60 20 1.5 40 35 7.6DTM6910 SOP-8 Single-N 100 20 2.5 47 40 6.4DTM4420 SOP-8 Single-N 30 20 1.2 12 8.9 13DTM4420B SOP-8 Single-N 30 20 1.5 9 7 15DTP9530 PPak Single-N 30 20 1.2 4.8 6 26DTS2314 SOT-23-3 Single-N 20 12 1.5 33 24 5.2 DTS03K16 SOT-23 Single-N 16 8 1 400 1000 0.42DTS2300S SOT-23 Single-N 20 8 0.4 55 40 3.8DTS2306 SOT-23 Single-N 20 12 0.65 27 22 4.8DTS2300A SOT-23-3 Single-N 20 8 0.4 33 24 5.2DTS2312 SOT-23 Single-N 20 8 1.2 45 33 3.8DTS3400A SOT-23-3 Single-N 30 20 1.2 33 24 6DTS3400 SOT-23-3 Single-N 30 20 1.2 58 4DTS3402 SOT-23 Single-N 30 20 1.2 73 58 3.6DTS4500 SOT-23 Single-N 40 20 1.2 55 40 3.6DTS6400 SOT23-3 Single-N 60 20 1.8 36 26 4.5DTS6504 SOT-23-6 Single-N 30 20 1.2 40 30 6DTS6410 SOT-23 Single-N 60 20 1 89 78 3DTS2300 SOT-23 Single-N 20 8 0.8 38 24 4.5DTC2058 SOT-89 Single-N 20 12 0.6 45 33 6.8DTC3058 SOT-89 Single-N 30 20 0.6 45 33 6.8DTE2312 TO-92 Single-N 20 12 0.6 28 22 4.8DTL9604 TO-220 Single-N 60 20 1 28 22 55DTL9826 TO-220 Single-N 100 20 2 43 32 65DTP0403 TO-220 Single-N 30 20 1.5 4.4 3.8 98DTP4N60 TO-220 Single-N 600 30 2 2200 4DTP75N80 TO-220 Single-N 80 25 3.5 8.8 75DTB3055 SOT-223 Single-N 30 20 1.5 38 25 7DTB6035 SOT-223 Single-N 60 20 1 40 28 7DTL15N03 TO-251 Single-N 30 20 1.2 16.5 13.5 15DTL40N03 TO-251 Single-N 30 20 1 10 7 40DTL2N60 TO-251 Single-N 600 20 2 3900 2DTU40N06 TO-252 Single-N 60 20 2 27 16 40DTU30N02 TO-252 Single-N 20 12 0.6 33 24 30DTU40N03 TO-252 Single-N 30 20 1 28 22 40DTU50N03 TO-252 Single-N 30 20 1.5 6.4 4.1 50DTU70N03 TO-252 Single-N 30 20 1.5 6.3 5 70DTU90N03 TO-252 Single-N 30 20 1.8 4.1 3 90DTU40N10 TO-252 Single-N 100 20 2 45 33 40DTU15N10 TO-252 Single-N 100 20 2 100 15DTU09N03 TO-252 Single-N 30 20 1.5 6.3 5.1 55DTU06N03 TO-252 Single-N 30 20 1.2 5.9 4.1 60DTU2N60 TO-252 Single-N 600 30 2 4400 2DTW2070 TO-263 Single-N 200 20 1.5 90 20DTK0403 TO-263 Single-N 30 20 2 4.4 3.8 98DTU20N20 TO-252 Single-N 200 20 2 80 20DTU50N06 TO-252 Single-N 60 20 2 31 26 50DTP80N10 TO-220 Single-N 100 20 2 5 110DTS2012 SOT323-3 Single-N 20 12 1 60 49 45 4DTP4N65 TO-220 Single-N 650 30 3 2900 4DTP4N65F TO-220F Single-N 650 30 3 2900 4DTU4N65 TO-252 Single-N 650 30 3 2900 4DTL4N65 TO-251 Single-N 650 30 3 2900 4DTU60N02 TO-252 Single-N 20 12 0.8 7.8 5.1 60DTS3406 SOT-23 Single-N 30 20 1.2 33 24 4.8DTP7N65 TO-220 Single-N 650 20 2 1300 7DTU3055 TO-252 Single-N 30 20 1.5 45 58 15DTS1004 SOT-23 Single-N 100 20 1.2 150 1202.3DTC9058SOT-89Single-N100201.7139 126 3.1DTP4N70SJ TO-220 Single-N 700 20 3 1200 4DTP16N65SJ TO-247 Single-N 650 20 3 145 16DTP38N65SJ TO-247 Single-N 650 20 3 416 38DTS2318 SOT-23 Single-N 20 20 0.5 10.5 9.5 12DTS2050 SOT-723 Single-N 20 12 0.6 521 286 0.63DTS2N7002SOT-23Single-N 60 20 1 4 2 0.3DTP4503 TO-220 Single-N 45 25 1.9 3.5 2.4 100DTQ6302DFN5x6Single-N30201.52.22.7100二.单P 型MOSFET :SOT-23:DTS2301(替代APM2301/AO3413/STS2309等),DTS3401(替代AO3401等),DTS2305,DTS2315,DTS3407; SOP-8:DTM9435(替代APM9435/AO9435/CEM9435等),DTM4435(替代STM4435,SI4435,AO4435等),DTM4407(替代AO4407等),DTM4415,DTM4425,DTM4435;P/NPackage ConfigurationBV (V) VGS (V) Vt (V) RDS(ON) Max (Typ)(m Ω)_Vg_2.5v RDS(ON) Max (Typ)(m Ω)_Vg_4.5vRDS(ON) Max (Typ)(m Ω)_Vg_10vID (A)Data sheetDTM9435 SOP-8 Single-P -30 20 -1.5 60 45 -5.8DTM4435 SOP-8 Single-P -30 20 -1.5 22 16 -8DTM4425 SOP-8 Single-P -30 20 -1.5 10.5 8.8 -15DTM4831SOP-8 Single-P -20 12 -1 65 -8DTM4407 SOP-8 Single-P -30 20 -1.5 18 12.5 -11.2DTM4415 SOP-8 Single-P -30 20 -1.5 12.8 9.2 -13.5DTP9531 PPak Single-P -30 20 -1.5 9.2 7.8 -26DTS2301 SOT-23 Single-P -20 12 -1 95 68 -3.8DTS2305 SOT-23 Single-P -20 12 -16850 -5DTS2301S SOT-23Single-P-20 12 -1.1 130 105 -3DTS2301A SOT-23-3 Single-P -20 12 -1.1 90 65 -4.5DTS3401 SOT-23Single-P-30 20 -1.2 130 88 -2.7DTS3401A SOT-23-3 Single-P -30 20 -1.5 70 53 -5.6DTS4501 SOT-23 Single-P -40 20 -1.5 110 83 -3.6DTS6503 SOT23-6 Single-P -30 20 -1.8 66 53 -5.1DTS7001 SOT-23Single-P-60 20 -1.8 5000 4000 -0.13DTS6401 SOT-23-3 Single-P -60 20 -1.8 48 40 -5.2DTU40P06 TO-252Single-P-60 20 -2 45 36 -40DTS3407 SOT-23-3 Single-P -30 20 -0.854 46 -5.6DTS2315SOT-23-3 Single-P-2012-0.7 90 65-4.5DTC2059 SOT-89 Single-P -20 12 -1.2 90 75 -6.6DTC3059 SOT-89 Single-P -30 20 -1.5 75 60 -7.6DTE2311TO-92 Single-P -20 12 -1 72 45 -4.2DTL9503 TO-220 Single-P -30 20 -1.5 16 13 -80DTP3006 TO-220 Single-P -60 20 -1.8 85 60 -30DTP6006 TO-220 Single-P -60 20 -1.8 28 20 -60DTL15P03TO-251Single-P -30 20 -1.5 70 43 -15DTU15P03 TO-252 Single-P -30 20 -1.5 70 43 15DTU40P06TO-252Single-P -60 20 -2 45 36 -40DTU80P03 TO-252 Single-P -30 20 -1.5 9 8 -80DTU40P06 TO-252 Single-P -60 20 -2 45 36 -40DTU15P10 TO-252 Single-P -100 20 -2300 260-15DTS2011 SOT-323 Single-P -20 8 -0.8 100 85 -3.1DTS3411 SOT-23 Single-P -30 20 -1.5 72 59 -4DTL19P10TO-251Single-P-100 20-2160120-19DTU19P10 TO-252 Single-P -100 20 -2 210 195 -19DTM9425 SOP-8 Single-P 20 12 -1 50 40 -6.6DTL50P03 TO-251 Single-P -30 25 -1.2 15 10 -50DTS3419 SOT-23L Single-P -20 8 -1 41 32 -5.9DTU50P03 TO-252 Single-P -30 20 -1.2 22 16 -50DTU80P03 TO-252 Single-P -30 20 -18 9 -80DTS2319 SOT-23 Single-P -20 -12 0.6 26 18 -6DTM4015 SOP-8 Single-P -40 -20 -1.7 13.2 9.4 -18DTU60P04 TO-252 Single-P -40 -20 -1.518 12 -60DTQ2115 DFN2x2 Single-P -12 8 -0.9 26 21 -14.5DTQ2221 DFN2x2 Single-P -20 12 -13828 -12DTQ3115 DFN3x3 Single-P -12 8 -0.9 19 15 -14.5DTQ3221 DFN3x3 Single-P -20 12 -13224 -12DTQ2115 DFN2x2 Single-P -12 8 -0.9 26 21 -14.5DTQ2221 DFN2x2 Single-P -20 12 -13828 -12DTQ3115 DFN3x3 Single-P -12 8 -0.9 27 21 -14.5DTQ3221DFN3x3Single-P-2012-13828-12三.双N 型MOSFET :TSOP-6:DTS8205(替代STM8205等,电池保护板专用),DTS5440(电池保护板专用)TSSOP-8:DTM8205(替代APM8205/STM8205/CEM8205等),DTM8201SOP-8:DTM9926(替代APM9926/STM9926/CEM9926等),DTM9936(替代APM9945,AO4828等),DTM4946(替代STM6930A等);DTM4936,DTM4926P/N Package Configuration BV(V)VGS(V)Vt(V)RDS(ON) Max(Typ)(mΩ)_Vg_2.5vRDS(ON) Max(Typ)(mΩ)_Vg_4.5vRDS(ON) Max(Typ)(mΩ)_Vg_10vID(A)DatasheetDTS5440 SOT-23-6 Dual-N 20 12 0.8 28 22 4.8DTM9936 SOP-8 Dual-N 20 12 0.6 20 14 7DTM9926 SOP-8 Dual-N 20 12 0.6 30 22 6.6DTM4946 SOP-8 Dual-N 60 20 1 40 35 7DTM4936 SOP-8 Dual-N 30 20 1.2 33 26 6.8DTM4830 SOP-8 Dual-N 80 30 3.5 75 3.5DTM4926 SOP-8 Dual-N 30 20 1.5 12 8 8DTM8201 TSSOP-8 Dual-N 20 12 0.6 20 17 6.5DTM8205 TSSOP-8 Dual-N 20 8 1 40 22 6.6DTS8205 SOT23-6 Dual-N 20 12 0.6 40 22 4.6DTS5440 TSOP-6 Dual-N 20 12 1.2 28 22 4.8DTS2212 SOT323-6 Dual-N 20 8 0.4 225 198 1.3DTM8002 TSSOP-8 Dual-N 20 12 0.6 7 5.5 11四.双P型MOSFET:TSOP-6:DTS5441SOP-8:DTM4953(替代APM4953,CEM4953,A04801等),DTM4953BDY(LED屏专用),DTM4925P/N Package Configuration BV(V)VGS(V)Vt(V)RDS(ON) Max(Typ)(mΩ)_Vg_2.5vRDS(ON) Max(Typ)(mΩ)_Vg_4.5vRDS(ON) Max(Typ)(mΩ)_Vg_10vID(A)DatasheetDTM4925 SOP-8 Dual-P -20 12 -1.5 33 24 -8 DTM4953 SOP-8 Dual-P -30 20 -1.5 78 46 -5.4 DTM4953BDY SOP-8 Dual-P -30 20 -1.5 45 32 -6.6DTS5441 TSOP-6 Dual-P -20 -12 -1.2 90 65 -4五.N+PMOSFTSOP-8: DTM4606(替代AO4606),DTM4616,DTM9906P/N Package Configuration BV(V)VGS(V)Vt(V)RDS(ON) Max(Typ)(mΩ)_Vg_2.5vRDS(ON) Max(Typ)(mΩ)_Vg_4.5vRDS(ON) Max(Typ)(mΩ)_Vg_10vID(A)DatasheetDTS3606N SOT-23-6 N+P 30 20 1.5 36 24 3.7DTM4606P SOP-8 N+P -30 20 -1.5 58 48 -6DTM4616N SOP-8 N+P 30 20 1.5 36 34 6.7DTM9906N SOP-8 N+P 60 20 1.8 31 28 5.3 DTM9906P SOP-8 N+P -60 20 -1.8 70 60 -4.9DTM4606BDYN SOP-8 N+P 30 20 1.5 24 18 7DTM4606BDYP SOP-8 N+P -30 20 -1.5 40 36 -6.9DTM4606N SOP-8 N+P 30 20 1.5 36 24 6.7DTM4616P SOP-8 N+P -30 20 -1.5 36 24 -7DTS3606P SOT-23-6 N+P -30 20 -1.5 83 69 -3 六.DFN封装系列(特别推介)P/N Package Configuration BV(V)VGS(V)Vt(V)RDS(ON) Max(Typ)(mΩ)_Vg_2.5vRDS(ON) Max(Typ)(mΩ)_Vg_4.5vRDS(ON) Max(Typ)(mΩ)_Vg_10vID(A)DatasheetDTQ2115 DFN2x2 Single-P -12 8 -0.9 26 21 -14.5DTQ2221 DFN2x2 Single-P -20 12 -1 38 28 -12 DTQ3115 DFN3x3 Single-P -12 8 -0.9 19 15 -14.5DTQ3221 DFN3x3 Single-P -20 12 -1 32 24 -12DTQ6302 DFN5x6 Single-N 30 20 1.5 2.2 2.7 100七.TO-252系列P/N Package Configuration BV(V)VGS(V)Vt(V)RDS(ON) Max(Typ)(mΩ)_Vg_2.5vRDS(ON) Max(Typ)(mΩ)_Vg_4.5vRDS(ON) Max(Typ)(mΩ)_Vg_10vID(A)DTU1N60 TO-252 Single-N 600 20 2 7Ω 1.4 DTU40N06 TO-252 Single-N 60 20 1.8 28 20 40 DTU30N02 TO-252 Single-N 20 12 0.65 33 24 30 DTU40N03 TO-252 Single-N 30 20 1.6 28 22 40 DTU50N03 TO-252 Single-N 30 20 1.5 6.4 4.1 50 DTU70N03 TO-252 Single-N 30 20 1.5 6.3 5 70 DTU90N03 TO-252 Single-N 30 20 1.8 4.1 3 90 DTU40N10 TO-252 Single-N 100 20 2 45 33 40 DTU15N10 TO-252 Single-N 100 20 2 115 95 15 DTU09N03 TO-252 Single-N 30 20 1.5 10.1 7 55 DTU06N03 TO-252 Single-N 30 20 1.5 5.9 4.1 60 DTU2N60 TO-252 Single-N 600 30 3.6 3900 2 DTU15P03 TO-252 Single-P -30 20 -1.5 70 43 15 DTU80P03 TO-252 Single-P -30 20 -1 9 8 -80 DTU80P03 TO-252 Single-P -30 20 -1.5 9 8 -80 DTU40P06 TO-252 Single-P -60 20 -2 45 36 -40 DTU16N25 TO-252 Single-N 250 20 2 165 16 DTU15P10 TO-252 Single-P -100 20 -2 300 260 -15 DTU19P10 TO-252 Single-P -100 20 -2 210 195 -19 DTU20N20 TO-252 Single-N 200 20 2 80 20DTU50P03 TO-252 Single-P -30 20 -1.2 22 16 -50 DTU4N65 TO-252 Single-N 650 30 3 2900 4 DTU60N02 TO-252 Single-N 20 12 0.8 7.8 5.1 60 DTU3055 TO-252 Single-N 30 20 1.5 45 58 15 DTU60P04 TO-252 Single-P -40 -20 -1.5 18 12 -60八.TO-220系列(广泛应用于逆变器,UPS,LED照明,开关电源等行业)P/N Package Configuration BV(V)VGS(V)Vt(V)RDS(ON) Max(Typ)(mΩ)_Vg_2.5vRDS(ON) Max(Typ)(mΩ)_Vg_4.5vRDS(ON) Max(Typ)(mΩ)_Vg_10vID(A)DatasheetDTP1N60 TO-220 Single-N 600 20 2 7Ω 1.4DTL9604 TO-220 Single-N 60 20 1 28 22 55DTL9826 TO-220 Single-N 100 20 2 43 32 65DTP0403 TO-220 Single-N 30 20 1.5 4.4 3.8 98DTP4N60 TO-220 Single-N 600 30 2 2200 4DTP75N80 TO-220 Single-N 80 25 3.5 8.8 75DTL9503 TO-220 Single-P -30 20 -1.5 16 13 -80DTP3006 TO-220 Single-P -60 20 -1.8 85 60 -30DTP6006 TO-220 Single-P -60 20 -1.8 28 20 -60 DTP4503 TO-220 Single-N 45 25 1.9 3.5 2.4 100 DTP80N10 TO-220 Single-N 100 20 2 5 110DTP4N65 TO-220 Single-N 650 30 3 2900 4DTP4N65F TO-220F Single-N 650 30 3 2900 4DTP7N65 TO-220 Single-N 650 20 2 1300 7DTP16N65SJ TO-247 Single-N 650 20 3 145 16DTP38N65SJ TO-247 Single-N 650 20 3 416 38。
一种智能加热棒的5V供电电路[实用新型专利]
![一种智能加热棒的5V供电电路[实用新型专利]](https://img.taocdn.com/s3/m/e40021ff55270722192ef7eb.png)
专利名称:一种智能加热棒的5V供电电路
专利类型:实用新型专利
发明人:夏兆建,赵武,叶剑辉,林晨琪,陈涟漪,林晨川申请号:CN201720160066.6
申请日:20170222
公开号:CN206472317U
公开日:
20170905
专利内容由知识产权出版社提供
摘要:本实用新型公开了智能加热棒的5V供电电路,包括220V交流电、TL431基准电压源U3、光电耦合器U1、SD6832芯片U2、二极管D1、二极管D3、二极管D4、二极管D6、二极管D7、二极管D8、二极管D9、电阻R1、电阻R2、电阻R3、电阻R4、电阻R5、电阻R6、电阻R7、电阻R15、电阻R16、电阻R17、电阻R18、电阻R19、电容C2、电容C9、电容C10、变压器T1、变压器T2、电感L1,本实用新型成本低、输出5V电压稳定,且电路结构简单,使用寿命长,抗干扰能力强。
申请人:杭州茂葳科技有限公司
地址:310000 浙江省杭州市杭州济技术开发区下沙街道幸福南路115号12幢标准厂房第2层国籍:CN
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基于DSP的DTMF的信号检测与识别

基于DSP的DTMF的信号检测与识别摘要双音多频DTMF(Dual Tone Multi-Frequency)信令在全世界范围内得到广泛应用,将DTMF信令的产生与检测集成到含有数字信号处理器(DSP)的系统中,是一项较有价值的工程应用。
本文给出一种实现方案,阐述DTMF信令的产生与检测的基本原理:用两个二阶数字正弦振荡器产生DTMF信号,并通过Goertzel算法实现DTMF信号检测。
本论文是在TI公司定点DSP芯片TMS320C54x系列中的实现DTMF信号的检测,采用DSP技术既增加了系统的功能、灵活性,又降低费用,克服了硬件电路实现检测的缺点。
因为本课题着重于DTMF信号的检测,所以DTMF信号的产生是通过音频处理软件Cool Edit Pro产生,然后将DTMF信号通过PC音频接口传输到AIC23B的接口,经过A/D采样编码后送到DSP进行信号检测,最后单片机将结果通过DSP 的HPI接口读取再通过单片机的串口传输到PC的串口调试助手上显示出来。
最后结果,结合Goertzel算法,DSK5402板能够实现对DTMF信号的解码,通过串口显示到串口调试助手上,达到了本论文的研究目的。
关键词:数字信号处理器DSP,双音多频DTMF,正弦波振荡器,Goertzel算法DTMF Signal Detection and Recognition Based on DSPABSTRACTWith the development of society, the signal generator has been widely used in radar application, communication system of simulation and test, the national defense, scientific research and industry. But with the development of society and the deepening of the research, the signal generator waveform programmable sex, the precision and stability of wave performance put forward higher request. The signal generator based on DSP is the height of the programming with its flexibility, for great application value and broad application prospect.This subject introduces based on DSP chip TMS320C5402 sine wave signal generator design principle and method. Use TMS320C5402 as data processor, STC89C51 as a controller to lead and control DSP chip. The direct sequence synthesis (DDS) technology, in DSP established on a signal generator, the development of serial upper machine software control DSP produce designated frequency(audio range)of sine wave,The system consists of DDS module and single-chip microcomputer control module, serial ports, sound card, etc of peripherals. Here introduces a DSP realize sinusoidal signal generator, its an am, FM function all have software to realize, and has the very good scalability, stability.KEY WORDS: DTMF signal, Goertzel algorithm, DSK5402 board, cool edit pro, DSP目录前言 (1)第1章绪论 (3)1.1 DTMF介绍 (3)1.2 方案对比 (3)1.3 传统的DTMF信号编解码介绍 (4)第2章DTMF信号的基本原理 (6)2.1 双音多频(DTMF)信号 (6)2.2 DTMF信号的硬件产生与检测 (8)2.3 双音多频信号软件产生与检测 (9)2.4 数字正弦波振荡器原理 (10)2.5 数字匹配滤波器原理(Geortzel算法) (12)第3章DTMF信号接收电路及声卡 (15)3.1 声卡概述 (15)3.1.1 声卡的功能 (15)3.1.2 声卡的基本组成 (15)3.2 音频编解码器TLV320AIC23 (16)3.3 DTMF信号输入电路 (20)3.3.1 电话状态指示电路 (20)3.3.2 电话电路 (21)3.4 DTMF发送电路 (21)3.4.1 DTMF信号接收电路 (22)3.5 DTMF发送电路与接收电路在通信方面的应用 (23)第4章DTMF信号软件介绍 (25)4.1 DTMF信号检测的DSP软件设计 (25)4.2 DTMF信号处理流程 (26)4.3 DTMF信号检测的单片机软件设计 (27)第5章DTMF中的硬件设备及仿真 (28)5.1单片机自举电路 (28)5.2电源转换电路 (29)5.3.单片机串口电路 (30)5.4仿真程序运行结果 (31)结论 (34)谢辞 (35)参考文献 (36)附录 (38)外文资料翻译 (40)前言双音多频(Dual Tone Multi Frequency,DTMF)信号产生起初是为了代替电话机的脉冲拨号而使用的,DTMF信号有一个高频信号和一个低频信号编码而成。
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1Dual N-Channel 30-V (D-S) MOSFETFEATURES•Halogen-free According to IEC 61249-2-21Definition•TrenchFET ® Power MOSFET •100 % UIS Tested •100 % R g Tested•Compliant to RoHS Directive 2002/95/ECAPPLICATIONS•Set Top Box•Low Current DC/DCPRODUCT SUMMARYV DS (V)R DS(on) (Ω)I D (A)Q g (Typ.)300.015 at V GS = 10 V 6.8 3.7 nC0.024 at V GS = 4.5 V5.8Notes:a.Package limited, T C = 25 °C.b.Surface Mounted on 1" x 1" FR4 board.c.t = 10 s.d.Maximum under Steady State conditions is 110 °C/W.THERMAL RESISTANCE RATINGSParameterSymbol Typical MaximumUnit Maximum Junction-to-Ambient a, c, dt ≤ 10 s R thJA 5870°C/WMaximum Junction-to-Foot (Drain)Steady StateR thJF38452Notes:a.Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %b.Guaranteed by design, not subject to production testing.Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.SPECIFICATIONS T J = 25 °C, unless otherwise notedParameter SymbolTest Conditions Min. Typ.Max.Unit StaticDrain-Source Breakdown Voltage V DS V GS = 0 V, I D = 250 µA30VV DS Temperature Coefficient ΔV DS /T J I D = 250 µA32mV/°C V GS(th) T emperature Coefficient ΔV GS(th)/T J - 5.0Gate-Source Threshold Voltage V GS(th)V DS = V GS , I D = 250 µA 1.2 2.5V Gate-Source LeakageI GSS V DS = 0 V , V GS = ± 20 V ± 100nA Zero Gate Voltage Drain Current I DSS V DS = 30 V, V GS = 0 V 1µA V DS = 30 V , V GS = 0 V, T J = 55 °C10On-State Drain Current aI D(on)V DS ≥ 5 V , V GS = 10 V 24A Drain-Source On-State Resistance a R DS(on)V GS = 10 V , I D = 5 A 0.0150.0175ΩV GS = 4.5 V , I D = 4 A 0.0240.028Forward T ransconductance a g fs V DS = 10 V , I D = 5 A16S Dynamic bInput Capacitance C iss V DS = 15 V, V GS = 0 V , f = 1 MHz445pFOutput CapacitanceC oss 75Reverse Transfer Capacitance C rss 37Total Gate Charge Q g V DS = 15 V, V GS = 10 V, ID = 5 A 812nC V DS = 15 V , V GS = 4.5 V , I D = 5 A 3.7 5.6Gate-Source Charge Q gs 1.4Gate-Drain Charge Q gd 1.05Gate Resistance R g f = 1 MHz0.84.38.6ΩTurn-On Delay Time t d(on) V DD = 15 V , R L = 3 ΩI D ≅ 5 A, V GEN = 4.5 V, R g = 1 Ω1224ns Rise Timet r 55100Turn-Off Delay Time t d(off) 1122Fall Timet f 816Turn-On Delay Time t d(on) V DD = 15 V , R L = 3 ΩI D ≅ 5 A, V GEN = 10 V , R g = 1 Ω48Rise Timet r 918Turn-Off Delay Time t d(off) 1020Fall Timet f612Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 25 °C2.25A Pulse Diode Forward Current I SM 24Body Diode VoltageV SD I S = 2 A, V GS = 0 V0.8 1.2V Body Diode Reverse Recovery Time t rr I F = 5 A, dI/dt = 100 A/µs, T J = 25 °C1120ns Body Diode Reverse Recovery Charge Q rr 48nC Reverse Recovery Fall Time t a 7nsReverse Recovery Rise Timet b4On-Resistance vs. Drain CurrentGate ChargeTransfer CharacteristicsCapacitanceOn-Resistance vs. Junction Temperature3Threshold Voltage45TYPICAL CHARACTERISTICS 25°C, unless otherwise noted*The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dis-sipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.Power, Junction-to-FootPower, Junction-to-AmbientTYPICAL CHARACTERISTICS 25°C, unless otherwise notedNormalized Thermal Transient Impedance, Junction-to-Foot 61DIM MILLIMETERSINCHESMin Max Min Max A 1.35 1.750.0530.069A 10.100.200.0040.008B 0.350.510.0140.020C 0.190.250.00750.010D 4.80 5.000.1890.196E 3.804.000.1500.157e 1.27 BSC0.050 BSCH 5.80 6.200.2280.244h 0.250.500.0100.020L 0.500.930.0200.037q 0°8°0°8°S0.440.640.0180.026ECN: C-06527-Rev. I, 11-Sep-06DWG: 54981RECOMMENDED MINIMUM PADS FOR SO-81DisclaimerALL PROD UCT, PROD UCT SPECIFICATIONS AND D ATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Din-Tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Din-Tek ”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Din-Tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Din-Tek ’s terms and conditions of purchase,including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Din-Tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Din-Tek product could result in personal injury or death.Customers using or selling Din-Tek products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Din-Tek personnel to obtain written terms and conditions regarding products designed for such applications.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Din-Tek . Product names and markings noted herein may be trademarks of their respective owners.Material Category PolicyDin-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European P arliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.Please note that some Din-Tek documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.Din-Tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Din-Tek documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21conform to JEDEC JS709A standards.。