【EP3511983A3】IMAGESENSORS【专利】
Image sensor
专利名称：Image sensor发明人：Sumitaka Goto申请号：US11375295申请日：20060314公开号：US20060208333A1公开日：20060921专利内容由知识产权出版社提供专利附图：摘要：A buried oxide is provided in a substrate of a photodiode so as to be opposed to a cathode and is in contact with a lower end of a depletion layer. The buried oxide is polarized owing to charges forming the depletion layer and thus works as a capacitor. A capacitor formed in the depletion layer and the additional capacitor made by the buriedoxide are, therefore, connected in series, which reduces a total junction capacitance Cs. Increase in photo-detection voltage Vs results in according to an equation, Vs=Qp/Ct, since an amount of photocharge Qp is constant. The increase in the photo-detection voltage Vs allows an improvement in the SN ratio of the photodiode. Further, easy formation of the buried oxide, for example, by implanting oxygen ions, permits low-cost manufacturing of the photodiode.申请人：Sumitaka Goto地址：Chiba-shi JP国籍：JP更多信息请下载全文后查看。
IMAGE SENSOR
专利名称：IMAGE SENSOR发明人：Min-jun CHOI申请号：US16382651申请日：20190412公开号：US20200119067A1公开日：20200416专利内容由知识产权出版社提供专利附图：摘要：An imaging device may include regions of active pixels, which are included in the generation of a photoelectric signal, and dummy pixels, which are not included in the generation of a photoelectric signal. Electrical characteristics of the dummy pixels may affect the photoelectric signal produced by the active pixels unless isolation is providedto reduce the electrical conductivity therebetween. An image sensor includes a substrate including an active pixel region and a dummy pixel region, a pixel isolation structure at least partially penetrating the substrate and configured to reduce electrical conductivity between an active pixel in the active pixel region and a dummy pixel in the dummy pixel region, and a dummy isolation structure at least partially penetrating the substrate of the dummy pixel region.申请人：Samsung Electronics Co., Ltd.地址：Suwon-si KR国籍：KR更多信息请下载全文后查看。
Image sensors
专利名称：Image sensors发明人：Kyung-Ho Lee,Jung-Chak Ahn,Dong-YoonJang,Wook Lee,Tae-Sub Jung申请号：US12801740申请日：20100623公开号：US08537255B2公开日：20130917专利内容由知识产权出版社提供专利附图：摘要：Image sensors including a semiconductor substrate, a plurality of photodetecting elements, a dielectric layer, a plurality of color filters, and a plurality of micro lenses. The photo detecting elements may be in the semiconductor substrate and mayconvert an incident light into an electric signal. The dielectric layer may be on the semiconductor substrate and may include a plurality of photo blocking regions on regions between the photo detecting elements. The color filters may be on the dielectric layer and may be disposed corresponding to the plurality of photo detecting elements, respectively. The micro lenses may be on the plurality of color filters and may be disposed corresponding to the plurality of photo detecting elements, respectively.申请人：Kyung-Ho Lee,Jung-Chak Ahn,Dong-Yoon Jang,Wook Lee,Tae-Sub Jung地址：Suwon-si KR,Yongin-si KR,Hwaseong-si KR,Anyang-si KR,Anyang-si KR国籍：KR,KR,KR,KR,KR代理机构：Harness, Dickey & Pierce, P.L.C.更多信息请下载全文后查看。
Image sensor
专利名称：Image sensor发明人：Tzeng-Fei Wen,Giuseppe Rossi,Ju-HsinYen,Chia-Huei Lin,Jhy-Jyi Sze,Chien-YaoHuang,Teng-Yuan Ko,Nien-Tsu Peng申请号：US12147481申请日：20080627公开号：US20080265354A1公开日：20081030专利内容由知识产权出版社提供专利附图：摘要：An image sensor, in which, a planarized layer is formed on a semiconductor substrate including a pixel array region, an optical black region, and a logic region tocover a photo sensing unit array in the pixel array region, a patterned metal layer is formed on the planarized layer corresponding to the pixel array region and the logic region, but not the optical black region. An optical black layer is formed in the optical black region after a passivation layer is formed and before a color filter array is formed at a temperature less than about 400° C., and preferably contains metal material.申请人：Tzeng-Fei Wen,Giuseppe Rossi,Ju-Hsin Yen,Chia-Huei Lin,Jhy-Jyi Sze,Chien-Yao Huang,Teng-Yuan Ko,Nien-Tsu Peng地址：Hsin-Chu Hsien TW,Los Angeles CA US,Taipei City TW,Taipei Hsien TW,Tai-Nan City TW,Hsin-Chu City TW,Hsin-Chu Hsien TW,Hsin-Chu City TW国籍：TW,US,TW,TW,TW,TW,TW,TW更多信息请下载全文后查看。
IMAGE SENSOR
专利名称：IMAGE SENSOR发明人：Woong-Hee Lee申请号：US15877898申请日：20180123公开号：US20190027526A1公开日：20190124专利内容由知识产权出版社提供专利附图：摘要：An image sensor includes a pixel array including pixel blocks, each comprising a light receiving section including unit pixels sharing a floating diffusion; and a driving section including a reset transistor and a driver transistor, wherein the pixel blocksinclude a first pixel block and a second pixel block which are adjacent to each other in afirst direction, and a third pixel block and a fourth pixel block which are adjacent to the first pixel block and the second pixel block, respectively, in a second direction, and wherein the reset transistor of the first pixel block and the reset transistor of the second pixel block share a drain between the reset transistors, and the driver transistor of the third pixel block and the driver transistor of the fourth pixel block share a drain between the driver transistors.申请人：SK hynix Inc.地址：Icheon-Si KR国籍：KR更多信息请下载全文后查看。
IMAGE SENSOR
专利名称：IMAGE SENSOR发明人：Cha-Young LEE申请号：US15607110申请日：20170526公开号：US20180138229A1公开日：20180517专利内容由知识产权出版社提供专利附图：摘要：An image sensor may include a pixel array that includes a plurality of pixel blocks arranged in an M×N (where M and N are natural numbers) matrix structure,wherein, among the plurality of pixel blocks, when compared to any one pixel block as a first pixel block, any one pixel block as a second pixel block adjacent to the first pixelblock in an M direction or an N direction has a planar shape that is obtained by inverting a planar shape of the first pixel block in the M direction. Each of the plurality of pixel blocks may include a light reception unit including a plurality of unit pixels which generate photocharges in response to incident light and are arranged in an m×n matrix structure to have a shared pixel structure; and a driving circuit suitable for outputting an image signal corresponding to the photocharges.申请人：SK hynix Inc.地址：Gyeonggi-do KR国籍：KR更多信息请下载全文后查看。
IMAGE SENSOR
专利名称：IMAGE SENSOR发明人：IMAMURA MASAYA,今村 将也申请号：JP特願平5-262292申请日：19931020公开号：JP特開平7-115505A公开日：19950502专利内容由知识产权出版社提供专利附图：摘要：PURPOSE:To provide the image sensor of high reliability in which number of manufacture process stages is reduced and a problem of short-circuit is decreased.CONSTITUTION:The image sensor is provided with a light emitting base board 4 on which a light emitting element 5 is mounted, a light receiving base board 22 on which a light receiving element 8 is mounted, a lead wire 26 used to interconnect an electrodeprovided on the light emitting base board 4 and an electrode provided on the light receiving base board 22, a frame 2 used to position the light emitting base board 4 and the light receiving base board 22 and a fixing member 24 fitted to the frame 2 to press and fix the light receiving base board 22 so as to conceal the electrode provided on the light receiving base board 22.申请人：ROHM CO LTD,ローム株式会社地址：京都府京都市右京区西院溝崎町21番地国籍：JP更多信息请下载全文后查看。
Image sensor
专利名称：Image sensor发明人：Masahiro Yokomichi,Satoshi Machida,YukitoKawahara申请号：US10367131申请日：20030214公开号：US20030155483A1公开日：20030821专利内容由知识产权出版社提供专利附图：摘要：An image sensor is provided in which a read rate can be increased and missing of data of the output signal of a light receiving element can be eliminated. There aredisposed switch elements that connect the output terminals of all of a plurality of lightreceiving elements that output an output signal in accordance with the amount of received light. The switch elements are arbitrarily conductive connective in accordance with 1/n of the highest resolution from the highest resolution, and the output of the average value is held in respective sample/hold circuits at the plural same potential, to thereby read only arbitrary data in accordance with the resolution at the time of reading. In the case where there are unnecessary data, the data is skipped so as to increase a read rate and eliminate missing of data of the output signals of the light receiving elements.申请人：YOKOMICHI MASAHIRO,MACHIDA SATOSHI,KAWAHARA YUKITO更多信息请下载全文后查看。
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
shielding layer (160) on a second surface (110B) of the semiconductor substrate (110) in the optical black region (OBR). Moreover, the image sensor (100) includes a light shielding wall structure (150) that is in the semiconductor substrate (110) between the pixel region (PR) and the optical black region (OBR) and that is connected to the light shielding layer (160).
(21) Application number: 19150278.0
(22) Date of filing: 04.01.2019
(51) Int Cl.: H01L 27/146 (2006.01)
(84) Designated Contracting States: AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR Designated Extension States: BA ME Designated Validation States: KH MA MD TN
(30) Priority: 12.01.2018 KR 20180004541
(71) Applicant: Samsung Electronics Co., Ltd. Suwon-si, Gyeonggi-do, 16677 (KR)
(72) Inventors: • NOH, Hyun-pil 13581 Seongnam-si, Gyeonggi-do (KR) • LEE, Chang-keun 08314 Seoul (KR) • YU, Je-won 17107 Yongin-si, Gyeonggi-do (KR) • LEE, Kang-sun 18444 Hwaseong-si, Gyeonggi-do (KR)
(74) Representative: Kuhnen & Wacker Patent- und Rechtsanwaltsbüro PartG mbB Prinz-Ludwig-Straße 40A 85354 Freising (DE)
(54) IMAGE SENSORS
(57) Image sensors (100) are provided. An image sensor (100) includes a semiconductor substrate (110) including a pixel region (PR) and an optical black region (OBR). The image sensor (100) includes a plurality of photoelectric conversion regions (120) in the pixel region (PR). The image sensor (100) includes a wiring structure (130) on a first surface (110F) of the semiconductor substrate (110). The image sensor (100) includes a light
EP 3 511 983 A3
Printed by Jouve, 75001 PARIS (FR)
EP 3 511 983 A3
5 10 15 20 25 30 35 40 45 50 55
2
EP 3 511 983 A3
5
3
EP 3 511 983 A3
5 10 15 20 25 30 35 40 45 50 55
4
EP 3 511 983 A3
5 10 15 20 25 30 35 40 45 50 55
5
(19)
TEPZZ¥5__98¥A¥T
(11)
EP 3 511 983 A3
(12)
EUROPEAN PATENT APPLICATION
(88) Date of publication A3: 02.10.2019 Bulletin 2019/40
(43) Date of publication A2: 17.07.2019 Bulletin 2019/29