UN2111中文资料

UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
s Electrical Characteristics
Marking Symbol (R1) 6A 10kΩ 6B 22kΩ 6C 47kΩ 6D 10kΩ 6E 10kΩ 6F 4.7kΩ 6H 22kΩ 6I 0.51kΩ 6K 1kΩ 6L 47kΩ 6M 47kΩ 6N 47kΩ 6O 4.7kΩ 6P 2.2kΩ 6Q 4.7kΩ EI 2.2kΩ EW 4.7kΩ EY 22kΩ FC 2.2kΩ FE 4.7kΩ
s Electrical Characteristics (continued)
Parameter UN2111/2112/2113/211L UN2114 UN2118/2119 UN211D Resistance ratio UN211E UN211F/211T UN211H UN211M UN211N UN211V UN211Z R1/R2 Symbol
Cob — VCB
6
IO — VIN
f=1MHz IE=0 Ta=25˚C
VIN — IO
VO=–5V Ta=25˚C
–100 –30 VO= –0.2V Ta=25˚C
–10000 –3000
Collector output capacitance Cob (pF)
5
Output current IO (µA)
(Ta=25˚C)
Symbol ICBO ICEO Conditions VCB = –50V, IE = 0 VCE = –50V, IB = 0 min typ max – 0.1 – 0.5 – 0.5 – 0.2 – 0.1 IEBO VEB = –6V, IC = 0 – 0.01 –1.0 –1.5 –2.0 – 0.4 VCBO VCEO IC = –10mA, IE = 0 IC = –2mA, IB = 0 –50 –50 35 60 80 160 hFE VCE = –10V, IC = –5mA 30 20 80 6 60 VCE(sat) VOH IC = –10mA, IB = – 0.3mA IC = –10mA, IB = –1.5mA VCC = –5V, VB = – 0.5V, RL = 1kΩ VCC = –5V, VB = –2.5V, RL = 1kΩ VOL VCC = –5V, VB = –3.5V, RL = 1kΩ VCC = –5V, VB = –10V, RL = 1kΩ VCC = –5V, VB = –6V, RL = 1kΩ fT VCB = –10V, IE = 1mA, f = 200MHz 80 10 22 47 (–30%) 4.7 0.51 1 2.2 (+30%) kΩ –4.9 – 0.2 – 0.2 – 0.2 – 0.2 MHz V – 0.07 400 20 200 – 0.25 – 0.25 V V V 460 V V mA Unit µA µA
–30
–100
Collector to base voltage
VCB (V)
Input voltage VIN (V)
Output current IO (mA)
4
元器件交易网
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
Characteristics charts of UN2112 IC — VCE
–160 –140 Ta=25˚C IB=–1.0mA –0.9mA –0.8mA –0.7mA –0.6mA –0.5mA –80 –60 –40 –20 0 0 –2 –4 –6 –8 –10 –12 –0.4mA –0.3mA –0.2mA –0.1mA –100
元器件交易网
Transistors with built-in Resistor
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
2
元器件交易网
UN2111/2112/2113/2114/2115/2116/2117/2118/2119/2110/ Transistors with built-in Resistor 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z
4
Input voltage VIN (V)
–1000 –300 –100 –30 –10 –3
–10 –3 –1 –0.3 –0.1 –0.03 –0.01 –0.1 –0.3
3
2
1
0 –0.1 –0.3
–1
–3
–10
–30
–100
–1 –0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
–10
Parameter Collector cutoff current UN2111 UN2112/2114/211E/211D/211M/211N/211T UN2113 Emitter cutoff current UN2115/2116/2117/2110 UN211F/211H UN2119 UN2118/211L/211V UN211Z Collector to base voltage Collector to emitter voltage UN2111 UN2112/211E UN2113/2114/211M Forward current transfer ratio UN2115*/2116*/2117*/2110* UN2119/211F/211D/211H UN2118/211L UN211N/211T UN211V UN211Z Collector to emitter saturation voltage UN211V Output voltage high level Output voltage low level UN2113 UN211D UN211E Transition frequency UN2111/2114/2115 UN2112/2117/211T Input resistance UN2113/2110/211D/211E
UN2116/211F/211L/211N/211Z R1 UN2118 UN2119 UN211H/211M/211V
* hFE rank classification (UN2115/2116/2117/2110)
Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460
(R2) 10kΩ 22kΩ 47kΩ 47kΩ — — — 5.1kΩ 10kΩ — 10kΩ 22kΩ 10kΩ 10kΩ 4.7kΩ 47kΩ 47kΩ 47kΩ 2.2kΩ 22kΩ
1.1 –0.1
0.1 to 0.3 0.4±0.2
1:Base 2:Emitter 3:Collector
0.8
0.95 2.9 –0.05
1
1.9±0.2
+0.2
0.95
3
1.45 0 to 0.1
2
q q q q q q q q q q q q q q q q q q q q
UN2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN2117 UN2118 UN2119 UN2110 UN211D UN211E UN211F UN211H UN211L UN211M UN211N UN211T UN211V UN211Z
Silicon PNP epitaxial planer transistor
For digital circuits
0.65±0.15 2.8 –0.3
+0.2
Unit: mm
0.65±0.15
1.5 –0.05
+0.25
s
q q
Features
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.
–160 –140 IB=–1.0mA Ta=25˚C –100
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
IC/IB=10 160 VCE= –10V
hFE — IC
Ta=75˚C
–30 –10 –3 –1 –0.3 –0.1 –25˚C –0.03 –0.01 –0.1 –0.3 Ta=75˚C
25˚C 120 –25˚C 80
25˚C
40
–1
–3
–10
–30
–100
0 –1
–3
–10
–30
–100 –300 –1000