NE32500M中文资料

FEATURES•SUPER LOW NOISE FIGURE:0.45 dB TYP at 12 GHz •HIGH ASSOCIATED GAIN:12.5 dB TYP at 12 GHz •GATE LENGTH: L G = 0.20 µm •GATE WIDTH: W G = 200 µmDESCRIPTIONNEC's NE32500 is a Hetero-Junction FET chip that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for commercial systems and industrial applications.NEC's stringent quality assurance and test procedures assure the highest reliability and performance.PART NUMBERNE32500PACKAGE OUTLINE00 (Chip)SYMBOLSPARAMETERS AND CONDITIONSUNITS MINTYP MAX NF Noise Figure, V DS = 2 V, I DS = 10 mA, f = 12 GHz dB 0.450.55G A Associated Gain, V DS = 2 V, I DS = 10 mA, f = 12 GHz dB 11.012.5I DSS Saturated Drain Current, V DS = 2 V,V GS = 0 V mA 206090g m Transconductance, V DS = 2 V, I D = 10 mA mS 4560I GSO Gate to Source Leakage Current, V GS = -3 VµA 0.510.0V GS (off)Gate to Source Cutoff Voltage, VDS = 2 V, ID = 100 µA V -0.2-0.7-2.0R TH (CH-C)Thermal Resistance 1 (Channel to Case)°C/W260ELECTRICAL CHARACTERISTICS (T A = 25°C)Note:1. RF performance is determined by packaging and testing 10 chips per wafer.Wafer rejection criteria for standard devices is 2 rejects per 10 samples.California Eastern LaboratoriesOUTLINE DIMENSIONS (Units in µm)CHIPThickness = 140 µmBonding AreaNE32500ABSOLUTE MAXIMUM RATINGS 1 (T A = 25°C)SYMBOLSPARAMETERS UNITS RATINGSV DS Drain to Source Voltage V 4.0V GS Gate to Source Voltage V -3.0I DS Drain CurrentmA I DSS P T Total Power Dissipation 2mW 200T CH Channel Temperature °C 175T STGStorage Temperature°C-65 to +175TOTAL POWER DISSIPATION vs.AMBIENT TEMPERATUREAmbient Temperature, T A (°C)T o t a l P o w e r D i s s i p a t i o n , P T (m W )N o i s e F i g u r e , N F (d B )TYPICAL PERFORMANCE CURVES (T A = 25°C)Note:1.Operation in excess of any one of these parameters may result inpermanent damage.2.Chip mounted on Alumina heatsink (size: 3 x 3 x 0.6t )N o i s e F i g u r e , N F (d B )A s s o c i a t e d G a i n , G A (dB )A s s o c i a t e d G a i n , G A (dB )D r a i n C u r r e n t , I D (m A )NOISE FIGURE AND ASSOCIATED GAINvs. FREQUENCYDrain Current, I D (mA)Frequency, f (GHz)NOISE FIGURE AND ASSOCIATED GAINvs. DRAIN CURRENTDRAIN CURRENT vs.DRAIN TO SOURCE VOLTAGEDrain to Source Voltage, V DS (V)2.01.51.00.5010203014131110100806040201.51.00.5012468101420302420161284G ANFV DS = 2 V I D = 10 mA250200150100500 50 100 150 200 250604020Gate to Source Voltage, V GS (V)D r a i n C u r r e n t , I D (m A )DRAIN CURRENT vs.GATE TO SOURCE VOLTAGE1-32PART I DSS SELECTION (mA)NE3250020 to 90 (Standard)NE32500N 0 to 60NE32500M50 to 90ORDERING INFORMATIONTYPICAL SCATTERING PARAMETERS (T A = 25°C)NE32500V DS = 2 V, I DS = 10 mAFREQUENCYS 11S 21S 12S 22(GHz)MAG ANG MAG ANG MAGANG MAG ANG 0.50.999-4 4.341770.006820.564-31.00.998-7 4.331740.012840.562-62.00.996-14 4.281680.025810.559-113.00.992-20 4.241630.037760.557-174.00.976-28 4.1691580.048710.551-235.00.962-36 4.111520.060660.546-296.00.962-42 4.061480.070620.539-347.00.943-48 3.951430.079580.533-408.00.928-55 3.831390.087550.526-449.00.920-60 3.731340.095510.519-4910.00.900-67 3.581290.104470.508-5411.00.881-72 3.461260.109430.503-5812.00.869-77 3.3341220.114400.494-6213.00.856-82 3.231180.120370.488-6614.00.839-86 3.111150.123340.483-6915.00.831-91 3.011120.127320.476-7216.00.818-96 2.881080.131290.472-7617.00.804-99 2.781050.134270.468-7918.00.796-103 2.681030.137240.464-8119.00.784-106 2.591000.0141220.460-8420.00.782-1112.49960.142200.456-88Note:1. Gain Calculation:MAG =|S 21||S 12|K - 1 ).2(K ± ∆ = S 11 S 22 - S 21 S 12When K ≤ 1, MAG is undefined and MSG values are used.MSG =|S 21||S 12|, K = 1 + | ∆ | - |S 11| - |S 22|2222 |S 12 S 21|,MAG = Maximum Available Gain MSG = Maximum Stable GainNE32500EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-027924-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: 6/21/2000DATA SUBJECT TO CHANGE WITHOUT NOTICELife Support ApplicationsThese NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.。