技术公司电源MTBF测试规范

技术公司电源MTBF测试规范1.0 目的依据MIL-HBDK-217F标准评估电源产品的可靠性。

2.0 适用范围适用于测试工程师、可靠测试工程师、技术员和工程测试人员对本司电源产品类的MTBF测试的标准依据。

3.0 定义MTBF——Mean time between failure. 平均故障间隔时间.MIL-HBDK-217F：美国军用手册——电子器件可靠性预估.4.0 权责测试组:测试工程师依据本规范对样机阶段确认测试内容进行测试验证并出具测试报告.5.0 规范内容5.1参数说明：πQ：Quality Factor品质因数, 很多产品的品质等级分为：MIL-SPEC和Lower两种，如下表说明，如该零件满足2种品质等级标准时，可用MIL-SPEC确定πQ的数值；如此标准被放弃或属于商业类制程时，我们用Lower确定πQ的数值。

Part Quality DesignatorsMicrocircuits 微电子S, B, B-1,Other: Quality Judged by screening LevelDiscrete Semiconductors 半导体JANTXV, JANTX, JANCapacitors, Established Reliability(ER) 电容，建立可靠性D, C, S, R, B, P, M, LResistors, Established Reliability(ER) 电阻，建立可靠性S, R, P, MCoils, Molded, R.F., Reliability(ER) 线圈、模型、RF，建立可靠性S, R, P, MRelays, Established Reliability (ER)继电器，建立可靠性R, P, M, LE使用环境πE类型描述良好的地面条件GB不移动的，温度和湿度受控制并能得到很好的保持,此类环境包括实验室工具与设备，医疗电子设备，商用和科学电脑配件，导弹以及相应的支持设备和发射井。

固定的地面条件GF一般的环境条件，如产品安装于固定的位置，有足够的风冷条件并尽可能不靠近其他发热设备。

此类包括有控制飞机飞行的固定雷达系统和通讯设备。

移动的使用环境GM产品装置在轮状装备上或轨型交通设备上，手工运输，。

此类包括战术导弹地面支持设备、移动通讯设备、战术喷火系统、手持通讯设备、激光探测器等。

P5.2元器件计算公式与参数选定5.2.1IC 类、数字或线性逻辑或门，MOS驱动器5.2.1.1适用范围：各类IC、线性或数字门电路、集成电路模块等5.2.1.2计算公式：λP =(C1×πT+C2×πE)×πQ×πL5.2.1.3参数计算公式：C1：MOS Linear and Digital Gate/Logic Array Die Complexity Failure Rate Digital Linear PLA/PALNo. Gates C1No. Transistors C1No. Gates C11 to 100 0.010 1 to 100 0.010 Up to 500 0.00085101 to 1,000 0.020 101 to 300 0.020 501 to 1,000 0.0017 1,001 to 3,000 0.040 301 to 1,000 0.040 1001 to 5000 0.0034 ……. ……. ……..πT：Temperature Factor计算公式：πT =0.1×exp(-Ea/(8.617×10-5) ×(1/(TJ+273)-1/298))其中： Ea：Effective Activation Energy (eV)Digital MOS: 0.35; Linear MOS: 0.65TJ: Worse caste Junction Temperature or Average Active Device Channel Temperature.C2：Package Failure Rate计算公式：C2=2.8×10-4×（Np）1.08Np: Number of Functional PinsπE ：GB: 0.50; GF: 2.0; GM: 4.0πQ：一般选择（Other Commercial or Unknown Screening Levels）: 10πL: Learning Factor，因使用的IC生产经验均大于2年，故选择：1.05.2.2半导体类5.2.2.1使用范围：低频二极管（开关二极管、快恢复二极管、功率整流器、电压调整器-稳压管、电流调整器-稳流管、瞬态抑制器、肖特基）5.2.2.2计算公式：λP =λb×πT×πS×πC×πQ×πE5.2.2.3参数说明：λb：Base Failure RateDiode Type/ Application λbSwitching 0.0010Fast Recovery Power Rectifier 0.025Power Rectifier/ Schottky 0.0030Power Diode 0.0050Voltage Regulator and Voltage Reference(Avalanche and Zener)0.0020…….πT：Temperature Factor1> 对于：Switching, Fast Recovery, Power Rectifier, TransientSuppressorπT =exp(-3091 ×(1/(TJ+273)-1/298))2> 对于：Voltage regulator, Voltage Reference, and CurrentRegulatorπT =exp(-1925 ×(1/(TJ+273)-1/298))** TJ: Junction Temperature (℃)πS：Electrical Stress Factor1>Voltage Regulator, Voltage Reference, Current RegulatorπS= 1.02>All OthersπS= 0.054 when Vs≤ 0.3;πS= Vs2.43 when 0.3<Vs≤ 1.0;** Vs= Voltage Stress Ration= Voltage Applied / Voltage RatedπC：Contact Construction FactorContact Construction πCMetallurgically Bonded 1.0 Non-Metallurgically Bonded and Spring Loaded Contact 2.0 πQ: 一般选择Lower: 5.5 or Plastic: 8..0πE : GB: 1.0; GF: 6.0; GM: 9.05.2.2.4使用范围：晶体管，低频，双极性；NPN、PNP（频率<200MHz）5.2.2.5计算公式：λP =λb×πT×πA×πR×πS×πQ×πE5.2.2.6参数说明：λb：Base Failure Rate 0.00074πT：Temperature FactorπT =exp(-2114 ×(1/(TJ+273)-1/298))** TJ: Junction Temperature(℃)πA：Application FactorApplication πA Linear Amplification 1.50Switching 0.70πR：Power Rating Factor1> =0.43 when Rated Power ≤0.1W2> = (Pr)0.37 When Rated Power >0.1WπS：Voltage Stress FactorπS = 0.045×exp(3.1×VS) (0<VS≤1.0)VS =Applied VCE/ Rated VCEOVCE=Voltage, Collector to EmitterVCEO= Voltage, Collector to Emitter, Base OpenπQ：一般选择Lower: 5.5 or Plastic: 8..0πE ：GB: 1.0; GF: 6.0; GM: 9.05.2.2.7适用范围：晶体管，低频，Si FET；N-Channel and P-Channel Si FET (频率≤400MHz)5.2.2.8λP =λb×πT×πA×πQ×πE5.2.2.9参数说明：λb：Base Failure RateTransistor Type λbMOSFET 0.012JFET 0.0045 πT：Temperature FactorπT =exp(-1925 ×(1/(TJ+273)-1/298))** TJ: Junction Temperature(℃)πA：Application FactorApplication(Pr, Rated Output Power) πALinear Amplification (Pr<2W) 1.5 Small Signal Switching 0.7Power FETs Non-linear, (Pr≥2W) 2≤ Pr<5W 2.0 5≤ Pr<50W 4.0 …………πQ：一般选择Lower: 5.5 or Plastic: 8..0πE ：GB: 1.0; GF: 6.0; GM: 9.05.2.2.10适用范围：光藕、LED(Light Emitting Diode)5.2.2.11计算公式：λP =λb×πT×πQ×πE5.2.2.12参数说明：λb：Base Failure RateOptoelectronic Type λbPhoto-Transistor 0.0055Poto-Diode 0.0040LED 0.00023…………πT: Temperature FactorπT =exp(-2790 ×(1/(TJ+273)-1/298))** TJ: Junction Temperature(℃)πQ: 一般选择Lower: 5.5 or Plastic: 8.0πE : GB: 1.0; GF: 2.0; GM: 8.05.2.3电阻类5.2.3.1计算公式：λP =λb×πT×πP×πS×πQ×πE5.2.3.2参数选择：Resistor StyleDescription（适用范围）λbπT计算公式πS计算公式RC 固定阻值、合成物、绝缘0.0017 Column:1 Column:2RM 固定阻值、薄膜、贴片、建立可靠性0.0037 Column:2 Column:1RD 固定阻值、薄膜（功率型）0.0037 N/A；πT=1 Column:1RTH 热敏电阻、绝缘0.0019 N/A；πT =1 N/A；πS=1RV 可变化阻值、合成物0.0037 Column:2 Column:1 …………TColumn 1: πT=exp(-0.2/(8.617×10-5)×(1/(T+273)-1/298))Column 2: πT= exp(-0.08/(8.617×10-5)×(1/(T+273)-1/298)) T: Resistor Case Temperature. It can be approximated as ambient component temperature for low power dissipation non-power type resistors.πS: Power Stress FactorColumn 1: πS=0.71×e1.1×(S)Column 2: πS= 0.54×e2.04×(S)S= Actual Power Dissipation / Rated PowerπP: Power FactorπP=(Power Dissiptation)0.39πQ: 一般取“Commercial or Unknown Screening Level”: 10πE : GB: 1.0; GF: 4.0; GM: 16.05.2.4电容类5.2.4.1计算公式：λP =λb×πT×πC×πV×πSR×πQ×πE5.2.4.2参数选择：Capacitor StyleDescription（适用范围）λbπT计算公式πC计算公式πV计算公式CRH Fixedsupermetallizedplastic FilmDielectric (DC, ACor DC and AC)Hermetically sealedin metal cases, ER0.00051 Column:1 Column:1 Column:1CY Fixed, glass 0.00076 Column:2 Column:1 Column:2dielectricCC, CCR Fixed, Ceramicdielectric(temperaturecompensating)0.00099 Column:2 Column:1 Column:3CU, CUR Fixed,Electrolytic( Aluminum Oxide),0.00012 Column:2 Column:2 Column:1CE Fixed, Electrolytic(DC, Aluminum Oxide,Dry electrolytePolarized)0.00012 Column:2 Column:2 Column:1…………参数计算公式与数值的选择：πT: Temperature FactorColumn 1: πT=exp(-0.15/(8.617×10-5)×(1/(T+273)-1/298))Column 2: πT= exp(-0.35/(8.617×10-5)×(1/(T+273)-1/298)) T: Capacitor Ambient Temperature.Notice:1.πTvalues shown should only be sued up to the temperature rating of the device.2.For devices with ratings higher than 150 degrees C. use theequation to determine πT(for applications above 150 degrees C.)πC: Capacitance FactorColumn 1: πS=C0.09Column 2: πS= C0.23πV: Voltage Stress FactorColumn 1: πV=(S/0.6)5 +1Column 2: πV=(S/0.6)10 +1Column 3: πV=(S/0.6)3 +1Column 4: πV=(S/0.6)17 +1Column 5: πV=(S/0.5)3 +1S: Operating Voltage/ Rated VoltageNote: Operating voltage is the sum of applied DC voltage and peak AC voltage.πSR: Series Resistance Factor1.Tantalum CSR Style Capacitors, Refer to the detail table.2.Others capacitors style, πSR =1πQ: 一般取“Commercial or Unknown Screening Level”: 10.0πE : GB: 1.0; GF: 10; GM: 205.2.5磁性材料5.2.5.1计算公式：λP =λb×πT×πQ×πE5.2.5.1参数选择：◎变压器类λb：Base Failure RateTransformer λb Low Power pulse (Peak Pwr.<300W, Avg.Pwr.<5W)0.022High Power pulse (Peak Pwr.≥300W, Avg. Pwr.≥5W)0.049πTπT =exp(-0.11/(8.617×10-5)×(1/(THS+273)-1/298))THS: Hot spot temperature(℃), This prediction model assumes that the insulation rated temperature is not exceeded for more than 5% ofthe time. （一般我们选用磁性器件的表面温度）T HS =TA+1.1(ΔT)TA: Inductive Device ambient operating temperature(℃).ΔT: Average temperature above ambient(℃).（详细说明请参考MIL-HDBK-217F的11.3）πQ: 一般取“Lower”: 3.0πE : GB: 1.0; GF: 6; GM: 12◎电感、扼流圈感应器类λb：Base Failure Rate; 取“Fixed inductor or choke”: 0.000030πT: Temperature FactorπT =exp(-0.11/(8.617×10-5)×(1/(THS+273)-1/298))THS: Hot spot temperature(℃), This prediction model assumes that the insulation rated temperature is not exceeded for more than 5% ofthe time. （一般我们选用磁性器件的表面温度）T HS =TA+1.1(ΔT)TA: Inductive Device ambient operating temperature(℃).ΔT: Average temperature above ambient(℃).（详细说明请参考MIL-HDBK-217F的11.3）πQ: 一般取“Lower”: 3.0πE : GB: 1.0; GF: 6; GM: 125.2.6继电器5.2.6.1适用范围：时序继电器、电控继电器、混合性继电器等5.2.6.2计算公式：λP =λb×πQ×πE5.2.6.3参数说明：λb：Base Failure RateRelay Type λb Solid state 0.029Solid state Time delay 0.029Hybrid 0.029πQ：选用”Commercial”: 1.9πE ：GB: 1.0; GF: 3; GM: 125.2.7开关器5.2.7.1适用范围：限制开关、压制型、按钮型等5.2.7.2计算公式：λP =λb×πL×πC×πQ×πE5.2.7.3参数说明：λbDescription λbDual-In-Line Package 0.00012Limit 4.3Pressure 2.8Pushbutton 0.10Sensitive 0.49πL：Load stress factorπL=exp(S/0.8)2 For Resistive loadπL=exp(S/0.4)2 For Inductive loadπL=exp(S/0.2)2 For Lamp loadNote: S= Operating load current / Rated resistive load currentπC：Contact configuration Factor (此为接触结构因数，参考接触点)πC= (NC)0.33Note: Applies to toggle and pushbutton switches only, all others useπC=1πQ：选用“Lower”: 2.0πE ：GB: 1.0; GF: 3.0; GM: 18.05.2.8 Connectors 连接器5.2.8.1适用范围：一般连接器5.2.8.2计算公式：λP =λb×πT×πK×πQ×πE5.2.8.3参数说明：Description λb 圆形/圆柱型0.0010 直插式（PCB）Card edge (PCB)* 0.040 矩形类 Rectangular 0.046 电话类 Telephone 0.0075 电源 Power 0.0070 ……πT: Temperature FactorπT = exp(-0.14/(8.617×10-5)×(1/(T+273)-1/298))T= Connector ambient + ΔTContact Gauge 线材规格Insert temperature rise32 ΔT =3.256×I1.8530 ΔT =2.856×I1.8528 ΔT =2.286×I1.8524 ΔT =1.345×I1.8522 ΔT =0.989×I1.8520 ΔT =0.640×I1.8518 ΔT =0.429×I1.8516 ΔT =0.274×I1.8512 ΔT =0.100×I1.85πK: Mating / Unmating Factor 拔插系数Mating/ Unmating Cycles (per 1000 Hours) πK0 to 0.05 1.0>0.05 to 0.5 1.5…………πQ: 选用“Lower”: 2.0πE : GB: 1.0; GF: 1.0; GM: 8.05.2.8.4适用范围：插座Socket5.2.8.5计算公式：λP =λb×πP×πQ×πE5.2.8.6参数说明：λbDescription λb Dual-In-Line Package 0.00064Single-In-Line Package 0.00064Chip carrier 0.00064Pin grid array 0.00064Transistor 0.0051…………πPπP= exp((N-1)/10)0.39N= Number of active PinsπQ: 选用“Lower”: 1.0πE : GB: 1.0; GF: 3.0; GM: 14.05.2.9 PCB5.2.9.1计算公式：λP =λb×[N1×πC+N2×(πC+13)] ×πQ×πE5.2.9.2参数说明：λb: Base failure rateTechnology λb Printed wiring assembly/ Printed circuitboards with PTHs0.000017Discrete wiring with electrolessDeposited PTH(≤2 Levels of Circuitry)0.00011N1 &N2: Number of PTHs FactorFactor QuantityN1 Automated techniques: quantity of wave infrared(IR) or vapor phase soldered functional PTHsN2 Quantity of hand soldered PTHsπC: Complexity FactorπC= 0.65 × P0.63P: Number of circuit planes (2 to 18)Note: Discrete wiring w/ PTH: πC=1πQ: 选用“Lower”: 1.0πE : GB: 1.0; GF: 2.0; GM: 7.05.2.10保险管5.2.10.1计算公式：λP =λb×πE5.2.10.2参数说明：λb: Base failure rate: 0.010πE : GB: 1.0; GF: 2.0; GM: 8.06.0 附件、记录6.1《MTBF测试报告》7.0 相关文件7.1《信赖信实验控制程序》 7.2《产品开发管理办法》。