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Hayati_et_al-2013-Microwave_and_Optical_Technology_Letters

2.88GHz.For the lower mode with C¼0.6pF and the higher mode with C¼5pF,the effects of varying/on CP perform-ance are given in Figures4and5,respectively.The simulation results suggest that an axial ratio of less than2dB can be found when/ranges between10and25 for the lower mode and between12and16 for the higher mode.3.RECONFIGURABLE DESIGN AND EXPERIMENTAL RESULTSAn antenna prototype with electrically switching was realized using a varactor diode(BB837,Siemens Semiconductor Group).For the dc bias(V0)used for controlling the varactor, its positive is connected to the feed line through a RF choke, which is composed of a high-impedance meandered microstrip line and a grounded capacitor of1nF,and the negative is directly linked to the RF ground plane,as shown in Figure1. Figure6exhibits the experimental results when V0is switched between two different values.From the measured results,it can be seen that the frequency with minimum axial ratio is1.83 GHz for the case of V0¼28V and it is2.96GHz for the case of V0¼6V.The CP bandwidths,determined by3dB axial ra-tio,are2.7and3.3%at the lower and higher CP operating fre-quencies,respectively.In addition,Figure6also demonstrates that a return loss of less than10dB is achieved within the two CP bandwidths.Therefore,the antenna can perform the dual-frequency operation with a frequency ratio of about1.6through switching.The radiation patterns at1.83and2.96GHz are measured and their results are plotted in Figure7.Broadside radiation with good CP performance is observed for each operating fre-quency,and the polarization in the plane of z>0is left-handed. The peak gain at1.83GHz is about3.3dBic and it is merely 0.2dB lower than that at2.96GHz.4.CONCLUSIONA design for circularly polarized annular slot antennas with switchable frequency has been presented.Only one diode is required in the reconﬁgurable design.With controlling the dc bias of the diode,the antenna can perform dual-frequency opera-tion with a high frequency ratio.Moreover,the antenna at the two operating frequencies has almost the same radiation pattern, polarization performance,and peak gain.REFERENCES1.Y.K.Jung and B.Lee,Dual-band circularly polarized microstripRFID reader antenna using metamaterial branch-line coupler,IEEE Trans Antennas Propag60(2012),786–791.2.Nasimuddin,Z.N.Chen,and X.Qing,Dual-band circularly-polar-ized S-shaped slotted patch antenna with a small frequency ratio, IEEE Trans Antennas Propag58(2010),2112–2115.3.J.Y.Sze,C.I.G.Hsu,and J.J.Jiao,CPW-fed circular slot antennawith slit back-patch for2.4/5GHz dual-band operation,Electron Lett42(2006),563–564.4.Y.L.Zhao,Y.C.Jiao,G.Zhao,Z.B.Weng,and F.S.Zhang,Anovel polarization reconﬁgurable ring-slot antenna with frequency agility,Microwave Opt Technol Lett51(2009),540–543.5.N.Jin,F.Yang,and Y.Rahmat-Samii,A novel patch antenna withswitchable slot(PASS):dual-frequency operation with reversed cir-cular polarizations,IEEE Trans Antennas Propag54(2006), 1031–1034.6.T.Y.Lee and J.S.Row,Frequency reconﬁgurable circularly polar-ized slot antennas with wide tuning range,Microwave Opt Technol Lett53(2011),1501–1505.V C2013Wiley Periodicals,Inc.DESIGN OF BROADBAND AND HIGH-EFFICIENCY CLASS-E AMPLIFIER WITH pHEMT USING A NOVEL LOW-PASS MICROSTRIP RESONATOR CELLMohsen Hayati1,2and Ali Lotfi11Electrical Engineering Department,Faculty of Engineering,Razi University,Tagh-E-Bostan,Kermanshah-67149,Iran; Corresponding author:mohsen_hayati@2Computational Intelligence Research Centre,Razi University,Tagh-E-Bostan,Kermanshah-67149,IranReceived31August2012ABSTRACT:In this article,a high-efﬁcient class-E ampliﬁer design with low voltage and broadband characteristics using a novel Front Coupled Tapered Compact Microstrip Resonant Cell is presented.The proposed micorstrip resonator is used as the harmonic control network in order to suppress higher order harmonics,which obtained the optimized impedance matching for the fundamental and harmonics.The class-E ampliﬁer is realized from0.7to1.8GHz,and obtained the power added efﬁciency of72.5–77.5%.The maximum value of Power added efﬁciency(PAE)is79.7%with11-dBm input power at1.5GHz. The designed class-E ampliﬁer using the proposed harmonic control network gained15.34%increment in PAE,and25.6%reduction in the circuit size in comparison with the conventional class-E ampliﬁer.The simulation and measurement results show the validity of the proposed design procedure of the broadband class-E ampliﬁer using a novel microstrip resonator cell.V C2013Wiley Periodicals,Inc.Microwave Opt Technol Lett55:1118–1118,2013;View this article online at .DOI10.1002/mop.27490Key words:switch mode;class-E amplifier;tapered cell;microstrip resonant cell;high efficiency;power added efficiency;zero voltage switching;zero voltage derivative switching1.INTRODUCTIONThe modern wireless communication systems need to consume the power supply.The main factor in reducing the consumption of the power supply is designing a low-voltage and high-efﬁ-ciency power ampliﬁer[1].The switch mode power ampliﬁer is an efﬁcient way for solving the efﬁciency problem.The class-E power ampliﬁer is a kind of the switch mode power ampliﬁer that the transistor acts as a switch.The class-E power ampliﬁer is tuned by a shunt capacitance.This type of the power ampliﬁer obtained100%drain efﬁciency theoretically[2].The class-E ampliﬁer’s response conditions are zero voltage switching (ZVS)and zero voltage derivative switching(ZVDS),which lead to zero power loss in the transistor.Therefore,a high-efﬁ-ciency power ampliﬁer is obtained[3].The shunt capacitance in the class-E power ampliﬁer has a main roll for achieving the class-E conditions[4].The power loss in the lower frequency can be neglected,but by increasing the operation frequency,the power dissipation is increased and the ideal operation of the class-E power ampliﬁer will be missed.The antiphase of the voltage and current wave-forms throughout the signal period,obtain the class-E power ampliﬁer with the maximum efﬁciency[5].This purpose can be achieved using a wave shaping network.The conventional class-E power ampliﬁer load resistance is very much lower than the transistor ON-resistance.This effect leads to efﬁciency degrada-tion and a narrowband load matching network[6].Furthermore, the transistor parasitic resistance for both the switch on-state and parasitic inductance leads to efﬁciency degradation in the radio frequency(RF)and microwave applications[7,8].The optimum operation of the class-E power ampliﬁer and the solution to the mentioned drawbacks can be obtained using two main methods:namely active device selection and circuit conﬁguration[9].The class-E ampliﬁer has various conﬁgura-tions such as the cascade[10]and push–pull[11].The cascade class-E conﬁgurations can double the maximum permissible drain voltage,and the push–pull class-E conﬁguration increases the output power and decrease the harmonic distortion with high efﬁciency.A new topology for the class-E ampliﬁer is proposed as an inverse class-E ampliﬁer,which has inductive reactance [12].The inverse class-E ampliﬁer has higher load resistance and lower peak switch voltage in comparison with the class-E ampliﬁer.Also,because of the abruption of the device output inductances,the value of the inductance in the load network is decreased.However,the inverse class-E ampliﬁer can be used only for the small to medium power applications.Therefore,to solve this drawback,the power combining methods have been used[13].Although,this method results in obtaining the inverse class-E ampliﬁer for higher power application,but the circuit conﬁguration and the design procedure are complicated with the circuit size increment because of using two power ampliﬁer circuits.The class-E power ampliﬁer is a high-efﬁciency power am-pliﬁer for the microwave application,which is implemented using the transmission line as the harmonic control network at the output of the ampliﬁer circuit[14].Furthermore,instead of the RF choke(RFC)a section of the transmission line is used.The transmission line has been used in the class-E power ampliﬁer using LDMOS[15],GaN HEMT[16–19],SiC MES-FET[20],and LDMOSFET[21]as the harmonic control net-work increasingly,because of the simplicity of its structure and high rejection of harmonics.Therefore,the class-E ampliﬁer conﬁguration and operation are the best candidates for the design of the ampliﬁer for the modern microwave communica-tion systems[22,23].Consequently,designing of the load network as the harmonic control network for suppression of harmonics in order to obtain a high-efﬁciency power ampliﬁer is the main challenge of the switch mode power ampliﬁers.The designing of the class-E power ampliﬁers using various microstrip structures has been proposed such as a defected ground structure[24],an asymmet-rical spur-line[25],and composite right/left-handed transmission lines[26].The narrowband load network and low efﬁciency remain as the main challenge to the class-E power ampliﬁer using the conventional microstrip transmission line[27].A compact microstrip resonant cell(CMRC)is a one-dimen-sional photonic band gap incorporating the microstrip transmis-sion line,which is,ﬁrst,proposed in[28].The CMRC structure exhibits high rejection of the harmonics with the compact circuit size in comparison with the conventional micorstrip transmission lines.Therefore,it is used for the linearization and efﬁciency in-crement of the microwave power ampliﬁers[29,30].The appli-cation of the conventional CMRC is limited to obtain a high-ef-ﬁciency switch mode ampliﬁer,as a result of the high insertion loss in the passband and restricted stopband.The front coupled tapered CMRC(FCTCMRC)is proposed in[31]for the implan-tation of a low-passﬁlter with high and wide rejection in the stopband with the compact circuit size in comparison with the conventional CMRC.Therefore,it can be widely used for designing the high-efﬁciency and broadband switch mode power ampliﬁer because of high and wide suppression of harmonics.In this article,the harmonic suppression of the class-E ampli-ﬁer using a novel FCTCMRC as the harmonic controller net-work is explored.A class-E ampliﬁer with higher efﬁciency at a wider bandwidth in comparison with the conventional ampliﬁers is achieved.The proposed class-E power ampliﬁer is designed and simulated for a frequency of1.5GHz using the micorstrip resonator structure.The measurement results of the proposed power ampliﬁer validate our design procedure and simulation results.2.CLASS-E AMPLIFIER FUNDAMENTAL AND DESIGN THEORY2.1.Class-E Ampliﬁer OperationThe basic circuit conﬁguration of the class-E ampliﬁer and switch waveforms are shown in Figures1(a)and1(b),respec-tively.The class-E ampliﬁer consists of the switch device,shunt capacitance,series-tuned load network L-C,and an ideal RFC. The switch-on duty ratio is assumed to be50%in designing the class-E ampliﬁer.This value of the duty ratio leads to optimum operation of the class-E ampliﬁer for obtaining high efﬁciency [32].For an ideal class-E operation,three requirements for the drain voltage and current should be met[2]:1.The rise of the voltage across the transistor at turn-offshould be delayed until the transistor is off.2.The drain voltage should be brought back to zero at thetime of the transistor turn-on.3.The slope of the drain voltage should be zero at the timeof the transistor turn-on.Therefore,the class-E power ampliﬁer is constructed based on two conditions as ZVS and ZVDS.These conditions are as follows:v s hðÞjh¼p¼0;(1)dv s hðÞd hh¼p¼0;(2)where v s(y)is the switch voltage,and y¼x t.The quality fac-tor of the output series resonant circuit is assumed inﬁnite. Therefore,the output current is sinusoidal asi oðhÞ¼I m sinðhþuÞ:(3)In the time interval0y<p,the switch device is in the on-state,therefore,using Kirchhoff’s current law at the switch,we havei sðhÞ¼I dc1þa sin hþuðÞðÞ:(4)This is the currentﬂow through the shunt capacitance in the switch-off state.Therefore,the voltage across the switchisFigure1(a)The basic circuit of the class-E ampliﬁer.(b)The class-E switch voltage and current waveformv sðtÞ¼1C sZ ti sðt0Þdt0¼I dcx C s1þa cos x tþuðÞÀcos uðÞðÞ:(5)Applying the class-E ZVS and ZVDS conditions to Eqs.(4)and (5),the value of a and u can be obtained asa¼ﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃﬃ1þp24r;(6)u¼ÀtanÀ12p8>:9>;:(7)The drain voltage waveform is shaped by the harmonics so that the drain voltage and the slope of the drain voltage is zero when the transistor is in the on-state.The reactance for all harmonics is negative and comparable in magnitude to the fundamental fre-quency load resistance.The ideal class-E ampliﬁer requirements are difﬁcult to meet.So,we often only tuned the second and third harmonics to get the suboptimum class-E power ampliﬁer solution.The analysis is performed considering just the output network behavior,thus neglecting input signal required to oper-ate the active device as an ideal switch.The optimal fundamental load by the Fourier-series expan-sion analysis in[7]used for achieving the perfect class-E opera-tion can be determined asZ E;f0¼0:28x C Pe49 :(8)This impedance is inductive.On the other hand,for the ideal operation of the class-E power ampliﬁer the impedances at the higher order harmonics are inﬁniteZ E;fn¼1;for n!2:(9)From(8)the nominal class-E ampliﬁer shunt capacitance C is deﬁned byC¼0:1836x0R:(10)In order to achieve the maximum operation frequency of the class-E ampliﬁer,the device output capacitance should be equal to Eq.(10).The matching network for the class-E power ampli-ﬁer using a low-pass Chebyshev-form impedance transformer is proposed in[7].Therefore,the synthesis of the load network is done using a short circuit,and open circuit stubs instead of lumped capacitors in the load network for unwanted harmonics.2.2.Design of a Class-E Ampliﬁer Using a pHEMTAchieving the optimum load is the main factor to obtain high efﬁciency when designing the class-E power ampliﬁer.On the other hand,the optimum load is varied with the operating fre-quency as in Eq.(8).Therefore,designing of the load network, which can operate in the wide frequency range,is needed for designing the class-E power ampliﬁer with the optimum condi-tions.The maximum operation frequency of the class-E power ampliﬁer is restricted by the shunt capacitance.The shunt capac-itance consists of the transistor output capacitance and the exter-nal capacitance.Thus,the optimum operating frequency of the class-E power ampliﬁer is achieved by selecting a transistor with lower output capacitance.On the other hand,the power loss is caused by ON-resistance of the transistor[33].Therefore, the active device with lower ON-resistance is preferred for designing the high-efﬁciency class-E power ampliﬁer.We selected an ATF-34143pHEMT because of its lower ON-resist-ance and lower shunt parasitic capacitance,which provides lower power dissipation and optimum operation frequency using external capacitance,respectively.The circuit topology of the conventional class-E ampliﬁer is shown in Figure2(a).It is designed using the design procedure,which is presented in[2, 3].The value of elements for an ideal class-E power ampliﬁer is tabulated in Table1.In the design of the class-E power ampli-ﬁer,it is assumed that the value of the DC-feed is inﬁnitive,but in real implementation this value isﬁnite,and we used the half wavelength microstrip transmission line for the DC-feed.In the conventional class-E ampliﬁer,using lumped elements, the second harmonic is located within the pass band.Therefore, the bandwidth is limited to one octave.In order to solve this drawback,one way is designing a multiple matching network for various bands and using switching element.This way leads to complexity of the ampliﬁer circuit and degradation of the efﬁciency.The use of the micorstrip transmission line is a low-cost and simple way for designing the class-E ampliﬁer with wide band and high-efﬁciency characteristics.We used the design proce-dure in Section2.1and designed the matching network for the ampliﬁer as shown in Figure2(b).The values of the transmis-sion lines dimensions are given in Table2.The class-E ampli-ﬁer is designed on RT/Duroid5880,a substrate with dielectric constant of2.2,height of15l l,and loss tangent of0.0009.Figure2Idealized class-E power ampliﬁer:(a)lumped elements and(b)transmission lineTABLE1Element Design for the Nominal Class-E AmplifierC i1(pF)C i2(pF)C o1(pF)C o2(pF)C e(pF)C g1(pF)C g2(pF)C d1(pF)C d2(pF)L i1(nH)L o1(nH)L o2(nH) Theoretical10010010010 4.2221000.50.2312 4.7 3.33.FRONT COUPLED TAPERED CMRC CHARACTERISTICSA novel FCTCMRC is proposed in [31],for the ﬁrst time,which is used to synthesize a low-pass ﬁlter with high and wide rejec-tion in the stopband.This microstrip structure exhibits bandstop characteristics and slow wave effects,which are used in the stopband extension and the circuit size reduction,respectively.The schematic and equivalent circuit of the resonator is shown in Figures 3(a)and 3(b),respectively.The proposed FCTCMRC has symmetrical topology.Therefore,the even–odd mode [34]can be used to simplify the analysis as shown in Figures 3(c)and 3(d).Consequently,theresonant condition for the odd-mode in Figure 3(c)is obtained by equating the input admittance Y o in of the proposed resonator to zero yields:Z 112x C 1ÀZ 1tan h 1 ÀZ 2tan h 2Z 1þtan h 12x C 1¼0:(11)Using the similar procedure,the even-mode resonant frequencies areobtained by equating the even admittance Y e in to zero as follows:Z 2tan h 1þZ 1tan h 2¼0:(12)The transmission zeros of the equivalent circuit for the proposed FCTCMRC,which is shown in Figure 3(a),is obtained whenY o in ¼Y ein asZ 2sin 2h 2þZ 1sin 2h 1¼cos 2h 1x C 1:(13)Therefore,the resonator characteristics for tuning transmission zeroes in the stopband can be achieved by the length and width of the tapered cells as shown in Figures 4(a)and 4(b).The pro-posed structure is optimized by an EM-simulator (ADS).The obtained dimensions are as follows:L t1¼2:58;L 2¼1:94;L 3¼2:7;W t1¼2:71;W t2¼5:6;W 1¼0:1;W 2¼0:56;L 3¼0:75;L f ¼2:36;W f ¼0:25all are in millimeter ðmm Þ:TABLE 2The Value of the Conventional Transmission Line for the class-E AmplifierTL 1TL 2TL b1TL 3TL 4TL 5TL b2Width (mm) 4.730.940.620.71 1.24 4.210.72Length (mm) 6.319.7262.3137.2318.4264.3Figure 3(a)Schematic of the proposed resonator.(b)Equivalent cir-cuit.(c)Odd-mode.(d)EvenmodeFigure 4(a)Changing of the transmission zeros with the width of tapered cell W t1.(b)Changing of the transmission zeros with the length of tapered cell L t .(c)Simulation and measurement results of the proposed harmonic control network.(d)Simulation input impedance of the FCTCMRCThe proposed FCTCMRC is fabricated,and the measurement is performed using an Agilent N5230A Network Analyzer.The simulation and measurement results of the proposed FCTCMRC are shown in Figure 4(c).As it is shown,it has an attenuation level À43and À33.1dB at 3.0and 4.5GHz,respectively.Therefore,the high suppression for the second and third har-monics is obtained.The insertion loss from DC to 2.39GHz is lower than À0.1dB.The simulation of the input impedance of the proposed CMRC for the fundamental and harmonics is shown in Figure 4(d).As it is observed,the harmonic impedan-ces are relatively open in comparison with the fundamental im-pedance.Consequently,it can be used as the matching network with high performance and low circuit complexity.4.CIRCUIT DESIGN AND IMPLEMENTATIONThe highly efﬁcient and compact size class-E ampliﬁer is designed and implemented for a 1.5-GHz band using an ATF-34143pHEMT.The proposed circuit is simulated using an Agi-lent’s Advanced Design System (ADS),and fabricated on an RT/Duroid 5880substrate.The active device is biased at V d ¼3V and V g ¼À0.7V.The FCTCMRC is used as the harmonic control network (HCN)at the output of the active device.The proposed HCN absorbed the parasitic reactance and capacitance of the active device.Therefore,it does not need to any lumped elements in series or parallel with the transistor to compensate the parasitic elements.The circuit schematic diagram of the designed class-E ampliﬁer is shown in Figure 5(a).Moreover,the photograph of the fabricated circuit is shown in Figure 5(b).The RFC is realized using the microstrip transmission line (TLb2)with the quarter wavelength at a frequency of 1.5GHz.The input matching elements consist of two series and parallel open stubs.The dimensions of the tapered cells and transmission lines in the HCN are tuned in order to optimize harmonic termi-nation in the implemented ampliﬁer circuit.The design and implementation of the output matching networks using the FCTCMRC as low-pass topology has been done from 0.7to 1.8GHz.The voltage and current waveforms of the designed class-E ampliﬁer are shown in Figure 5(c).The switch is open for the time interval,0.2–0.4ns and the current through it is near zero.The switch is closed during the time interval 0.6–0.8ns,and the voltage across it is near to zero.The class-E ZVS and ZVDS conditions in the switch turn-off state are obtained.Therefore,the high-efﬁciency class-E ampliﬁer is achieved.The input signal is generated using an Agilent E4433B signal generator,and the measurement is done by an E4440A PSA se-ries spectrum analyzer.The simulated and measured output power and gain for P in ¼11dBm (input power)are shown in Figure 6(a).The maximum output power at 1.5GHz with P in ¼11dBm is 25.3dBm,and the related gain is 14.3dB.The con-ventional class-E ampliﬁer without CMRC has an output power of 18.5dBm and gain of 7.5dB.The class-E ampliﬁer using CMRC has 36.7%output power improvement in comparison with the one without CMRC.The simulation and measurement results for the PAE at P in ¼11dBm (input power)is shown as a function of the operating frequency in Figure 6(b).The highest value of PAE at a fre-quency of 1.5GHz was 79.7%.The value of the PAE is 69.1%for the conventional class-E ampliﬁer without CMRC.There-fore,the proposed class-E ampliﬁer using the novel CMRC has 15.34%PAE improvement in comparison with the one without CMRC.The output power of the conventional class-E ampliﬁer is decreased as the operating frequency is increased.As shown in Figure 6(a),this decrement is considerable when the operating frequency is more than 1.2GHz.Therefore,the conventional class-E ampliﬁer has a drawback for the broadband applications.The designed class-E ampliﬁer has 25.6%circuit size reduction in comparison with the conventional class-E ampliﬁer.5.CONCLUSIONThe class-E ampliﬁer with high efﬁciency and broadband char-acteristics has been designed and implemented.A novel and simple load-matching technique for the low-voltage microwave class-E ampliﬁer using a front-coupled taperedcompactFigure 5The pHEMT class-E ampliﬁer.(a)Circuit conﬁguration.(b)A photograph of fabricated ampliﬁer.(c)Simulated switch voltage and current waveforms.[Color ﬁgure can be viewed in the online issue,which is available at ]microcstrip resonant cell has been presented.The proposed am-pliﬁer achieved an output power of 25.3dBm,a power added efﬁciency of 79.7%,and a gain of 7.5dB at input power of 11dBm.It has high-efﬁciency performance over a signiﬁcant band-width form 0.7to 1.8GHz (88%).The proposed compact micro-strip resonant cell as the harmonic control network exhibited 15.34%improvement in PAE and 25.6%reduction in the circuit size in comparison with the conventional class-E ampliﬁer.The extremely low insertion loss at the fundamental frequency and size reduction characteristics can be used in the design of the class-E ampliﬁer with higher output power and smaller size,which are required in the 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for a high power sic MES-FET class-E power ampliﬁer,Microwave Opt Technol Lett 52(2010),1650–1652.26.M.Thian and V.Fusco,Design strategies for dual-band class-Epower ampliﬁer using composite right/left-handed transmission lines,Microwave Opt Technol Lett 49(2007),2784–2788.27.Y.Qin,S.Gao,A.Sambell,and E.Korolkiewicz,Design of low-cost broadband class-e power ampliﬁer using low-voltage supply,Microwave Opt Technol Lett 44(2005),103–106.28.Q.Xue,K.M.Shum,and C.H.Chan,Novel 1-D microstrip PBGcells,IEEE Microwave Wireless Comp Lett 10(2000),403–405.29.T.Yin,Q.Xue,and C.H.Chan,Ampliﬁer linearization using com-pact microstrip resonant cell-theory and experiment,IEEE Trans Microwave Theory Tech 52(2004),927–934.Figure 6Comparison of the conventional ampliﬁer simulation with the simulated and measured results of the proposed ampliﬁer.(a)Output power and gain.(b)Power added efﬁciency (PAE %)。

Streamlight ProTac HL 3 Ultra High Lumen Flashligh

User ManualFeatures· Purpose-designed for law enforcement, hunting and tacticalapplications.· The world’s first line of flashlights to feature third generation SSR (smart selector ring) technology· Smoothly and rapidly select brightness levels and function by rotating asmart selector ring· Utilizes the latest CREE XM-L (XM-L2 T6) LED for a maximum output ofup to 960 lumens· Second generation of ‘Crystal Coating Technology’ along with ‘PrecisionDigital Optics Technology’ provide extreme reflector performance· Boasts a peak beam intensity of 23,256cd and a throw distance of up to 308 meters (ANSI FL1)· High efficiency circuit board provides up to 200 hours runtime on lowest output level· Equipped with unique multi-colored (red, green and blue) tactical / signaling lights· Infinite brightness adjustment from 0 to 960 lumens · Six rapidly switchable functions to select from· Multi-functional power indicator light displays low battery status · Patented spring-loaded impact absorption mechanism with reverse polarity protection· Stainless steel titanium-plated two-way clip· Stainless steel retaining ring protects core components from damage · Toughened ultra-clear mineral glass with anti-reflective coating · Constructed from aero grade aluminum alloy · Robust HAIII military grade hard-anodized· Waterproof in accordance with IPX-8 (two meters submersible)· Impact resistant to 1.5 meters · Tail stand capabilityDimensionsLength: 158mm (6.22”)Head diameter: 40 mm (1.57”)Tube diameter: 25.4mm (1”)Weight : 173g (6.1oz)(without battery)AccessoriesQuality holster, removable clip, tactical ring, lanyard, spare tail cap button and spare O-ringNOTE:1. Ensure batteries are inserted with the positive (+) end pointing to the head. The SRT7 will not operate with incorrectly inserted batteries.2. Please do NOT light directly to the eyes, which will hurt the eyes.Switching ON/OFFTo switch ON: Press the button on the tailcap until a “click” is heard.To switch OFF: Press the button on the tailcap a second time until a “click” is heard.Momentary IlluminationMomentary illumination can be achieved by switching the flashlight off and then half pressing and holding the tail switch. Release switch to turn the light off.Adjusting OutputWith the light turned on, slowly rotate the Smart Selector Ring (adjacent to the bezel) in a counter-clockwise direction to cycle through thefollowing brightness levels: beacon -> police warning signal -> blue mode -> green mode -> red mode -> standby mode -> infinite brightness modes -> turbo mode -> strobe mode. These modes may be cycled through inNITECORE (SYSMAX) is a member of PLATO, participating in and helping to develop the ANSI/NEMA FL1 standard of measurement. Product testing data is in accordance with these internationally recognized scientific standards.NOTICEThe above data has been measured in accordance with the international flashlight testing standardsANSI/NEMA FL1 using one x 3.7V 2600mAh Nitecore 18650 battery and 2 x 3V 1550mAh Nitecore CR123 batteries under laboratory conditions. The data may vary slightly during real-world use due to battery type, individual usage habits and environmental factors.*Infinite brightness adjustment variesfrom 0.1 to 960 lumens and ismanually adjusted by rotation of the Smart Selector Ring. Subsequently,runtimes will vary anywhere from 105minutes to 200 hours depending on chosen level of output.Battery InstallationInsert one 18650 battery or two CR123 batteries with the positive pole Output & RuntimeTURBOLUMENS960*1h 45min 1h 15minLOWERLUMENS0.1*200h 120h308m (Beam Distance)23256cd(Peak Beam Intensity)IPX-8, 2m (Waterproof AND Submersible)1.5m (Impact Resistant)2×CR1231×18650SYSMAX Industry Co., Ltd.TEL: +86-20-83862000 FAX: +86-20-83882723 E-mail: *****************Web: Address ： Rm1407-08, Glorious Tower, 850 East Dongfeng Road,Guangzhou, China 510600Warranty ServiceAll NITECORE ® products are warranted for quality. DOA / defective products can be exchanged for replacement through a localdistributor/dealer within the 14 days of purchase. After 14 days, alldefective / malfunctioning NITECORE ® products will be repaired free of charge for a period of 18 months from the date of purchase. After 18 months, a limited warranty applies, covering the cost of labor andmaintenance, but not the cost of accessories or replacement parts. The warranty is nullified in all of the following situations:1. The product(s) is/are broken down, reconstructed and/or modified by unauthorized parties.2. The product(s) is/are damaged through improper use.3. The product(s) is/are damaged by leakage of batteries.To guarantee a swift and effective customer service, Nitecore suggest you to contact the point of purchase for assistance.For the latest information on NITECORE ® products and services, please contact your national NITECORE ® distributor or send an email to ********************The Nitecore official website shall prevail in case of any product datachanges.Please follow our facebook for more info: NITECORE FlashlightsNote: When using the SRT7 in infinite brightness mode, runtime will increase when lower levels of output are selected. On its lowest setting, the SRT7 will run continuously for up to 200 hours and on its highest setting continuously for up to one hour and 45 minutes.NB:1. For user safety and to prevent overheating / failure, the SRT7 willautomatically switch to high mode after twenty minutes of use in Turbo mode. Slowly rotate the Smart Selector Ring or press the tail switch again to reactivate turbo mode when needed.2. When the SRT7 is switched on standby mode, it will consume small amounts of power to maintain the settings in the MCU (micro control unit) but appear to be turned off. The power indicator on the light head will blink once every two seconds to indicate the SRT7 is in standby mode and to act as a locator.Power Tips1. With the light switched on, the power indicator will blink once every two seconds when power levels reach 50%.2. With the light switched on, the power indicator will blink rapidly when power levels are low.Changing BatteriesWhen the power indicator blinks rapidly it means the batteries need to be replaced. Alternatively if the light becomes dim or unresponsive to adjustment this also indicates batteries need to be replaced.MaintenanceEvery 6 months, threads should be wiped with a clean cloth followed by a thin coating of silicon-based lubricant.。

IR公司_大功率MOS管选型

I DContinuous Drain Current(A)70°Micro3Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPartNumberPD Max.PowerDissipation (W)N-ChannelLogic LevelIRLML2402*912570.54200.25 1.20.95230H1IRLML2803912580.54300.251.20.93230P-ChannelLogic LevelIRLML6302*912590.54-200.6-0.62-4.8230H1IRLML5103912600.54-300.6-0.61-4.8230* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°Micro6Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPartNumberPD Max.PowerDissipation (W)N-ChannelLogic LevelIRLMS1902915401.7200.10 3.2 2.675H2IRLMS1503915081.7300.103.22.675P-ChannelLogic LevelIRLMS6702*914141.7-200.20-2.3-1.975H2IRLMS5703914131.7-300.20-2.3-1.975* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°Micro8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRF7601* 912611.820 0.035 5.7 4.6 70 H3IRF7603 912621.830 0.035 5.6 4.5 70Dual N-Channel Logic LevelIRF7501* 912651.220 0.135 2.4 1.9 100 H3IRF7503 912661.2530 0.135 2.4 1.9 100P-Channel Logic LevelIRF7604* 912631.8-20 0.09 -3.6 -2.9 70 H3IRF7606 912641.8-30 0.09 -3.6 -2.9 70Dual P-Channel Logic LevelIRF7504* 912671.25-20 0.27 -1.7 -1.4 100 H3IRF7506 912681.25-30 0.27 -1.7 -1.4 100Dual N- and P-Channel Logic LevelIRF7507* 912691.2520 0.1352.4 1.9 100 H3-20 0.27 -1.7 -1.4IRF7509 912701.2530 0.135 2.4 1.9 100-30 0.27 -1.7 -1.4* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRF7413913302.5300.011139.250H4IRF7413A 916132.5300.0135128.450IRF9410915622.5300.0375.850Dual N-ChannelIRF7311914352.0200.029 6.6 5.362.5H4IRF7313914802.0300.029 6.5 5.262.5IRF7333917002.0300.10 3.5 2.862.5917002.0300.050 4.9 3.962.5IRF9956915592.0300.103.52.862.5Dual P-ChannelIRF7314914352.0-200.058-5.3-4.362.5H4IRF7316915052.0-300.058-4.9-3.962.5IRF9953915602.0-300.25-2.3-1.862.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)RΘMax.ThermalResistance(°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)Dual N- and P-ChannelIRF7317 915682.020 0.029 6.6 5.3 62.5 H42.0-20 0.058 -5.3 -4.3 62.5IRF9952 915622.030 0.103.5 2.8 62.5915622.0-30 0.25 -2.3 -1.8 62.5IRF7319 916062.030 0.029 6.5 5.2 62.52.0-30 0.058 -4.9 -3.9 62.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRF7401912442.5200.0228.77.050H4IRF7201911002.5300.0307.0 5.650IRF7403912452.5300.0228.55.450Dual N-ChannelLogic LevelIRF7101908712.0200.10 3.5 2.362.5H4IRF7301912382.0200.050 5.2 4.162.5IRF7303912392.0300.050 4.9 3.962.5IRF7103910952.0500.1303.02.362.5P-ChannelLogic LevelIRF7204911032.5-200.060-5.3-4.250H4IRF7404912462.5-200.040-6.7-5.450IRF7205911042.5-300.070-4.6-3.750IRF7406912472.5-300.045-5.8-3.750IRF7416913562.5-300.02-10-7.150* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)Dual P-ChannelLogic LevelIRF7104910962.0-200.250-2.3-1.862.5H4IRF7304912402.0-200.090-4.3-3.462.5IRF7306912412.0-300.10-3.6-2.962.5Dual N- and P-Channe Logic LevelIRF7307912421.4200.050 4.3 3.490H4-200.090-3.6-2.9IRF7105910972.0250.1093.5 2.862.52-250.25-2.3-1.862IRF7309912432.0300.050 4.9 3.962.5-300.10-3.6-2.9* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SOT-223Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFL4105913812.1550.045 3.7 3.060H6IRFL110908612.01000.54 1.50.9660IRFL4310913682.11000.20 1.6 1.360IRFL21090868 2.02001.50.960.660IRFL214908622.02502.00.790.560P-ChannelIRFL9110908642.0-1001.2-1.1-0.6960H6N-ChannelLogic LevelIRLL3303913792.1300.031 4.6 3.760H6IRLL014N 914992.1550.14 2.0 1.660IRLL2705913802.1550.043.83.060* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFR33039164257300.0313321 2.2H7IRFR024N9133638550.0751610 3.3IRFR41059130248550.0452516 2.7IRFR12059131869550.0273723 1.8IRFR11090524251000.54 4.3 2.75IRFR120N 91365391000.219.1 5.8 3.2IRFR391091364521000.11159.5 2.4IRFR2109052625200 1.5 2.6 1.75IRFR22090525422000.8 4.833IRFR21490703252502 2.2 1.45IRFR2249060042250 1.1 3.8 2.43IRFR3109059725400 3.6 1.7 1.15IRFR3209059842400 1.8 3.123IRFR42090599425003 2.4 1.53IRFRC2090637426004.421.33* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)P-ChannelIRFR55059161057-550.11-18-11 2.2H7IRFR53059140289-550.065-28-18 1.4IRFR90149065425-600.5-5.1-3.25IRFR90249065542-600.28-8.8-5.63IRFR91109051925-100 1.2-3.1-25IRFR91209052042-1000.6-5.6-3.63IRFR9120N 9150739-1000.48-6.5-4.1 3.2IRFR92109052125-2003-1.9-1.25IRFR92209052242-200 1.5-3.6-2.33IRFR92149165850-250 3.0-2.7-1.7 2.5IRFR93109166350-4007.0-1.8-1.12.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRLR27039133538300.0452214 3.3H7IRLR33039131657300.0313321 2.2IRLR31039133369300.0194629 1.8IRLR024N 9136338550.0651711 3.3IRLR27059131746550.042415 2.7IRLR29059133469550.0273623 1.8IRLR120N 91541391000.18511 6.9 3.2IRLR341091607521000.10159.52.4* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-ChannelIRFZ24NS 913554555 0.07 17 12 3.3 H10IRFZ34NS 913116855 0.04 29 20 2.2IRFZ44NS 9131511055 0.022 49 35 1.4IRFZ46NS 9130512055 0.020 53 37 1.3IRFZ48NS 9140814055 0.016 64 45 1.1IRF1010NS 913723.855 0.011 84 60 40IRF3205S 9130420055 0.008 110 80 0.75IRFZ44ES 9171411060 0.023 48 34 1.4IRF1010ES 9172017060 0.012 83 59 0.90IRF2807S 9151815075 0.013 71 50 1.0IRF520NS 9134047100 0.2 9.5 6.7 3.2IRF530NS 9135263100 0.11 15 11 2.4IRF540NS 91342110100 0.052 27 19 1.6IRF1310NS 91514120100 0.036 36 25 1.3IRF3710S 91310150100 0.028 46 33 1.0IRF3315S 9161794150 0.082 21 15 1.6IRF3415S 91509150150 0.042 37 26 1.0IRFBC20S 9.101450600 4.4 2.2 1.4 2.5IRFBC30S 9101574600 2.2 3.6 2.3 1.7IRFBC40S 91016130600 1.2 6.2 3.9 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemandNumberCase Outline KeyPart NumberP D Max.PowerDissipation (W)IRFBF20S 9166554900 8.0 1.7 1.1 2.3 H10P-ChannelIRF5305S 91386110-55 0.06 -31 -22 1.4 H10IRF4905S 914783.8-55 0.02 -74 -52 40IRF9520NS 9152247-100 0.48 -6.7 -4.8 3.2IRF9530NS 9152375-100 0.20 -14 -9.9 2.0IRF9540NS 9148394-100 0.117 -19 -13 1.6IRF5210S 91405150-100 0.06 -35 -25 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRL3302S 916925720 0.020 39 25 2.2 H10IRL3202S916756920 0.016 48 30 1.8IRL3102S 916918920 0.013 61 39 1.4IRL3402S 9169311020 0.01 85 54 1.1IRL3502S 9167614020 0.007 110 67 0.89IRL2703S 913604530 0.04 24 17 3.3IRL3303S 913236830 0.026 38 27 2.2IRL3103S 9133811030 0.014 64 45 1.4IRL2203NS 9136717030 0.007 116 82 0.90IRL3803S 9131920030 0.006 140 98 0.75IRLZ24NS 913584555 0.06 18 13 3.3IRLZ34NS 913086855 0.035 30 21 2.2IRLZ44NS 9134711055 0.022 47 33 1.4IRL3705NS 9150217055 0.01 89 63 0.90IRL2505S 9132620055 0.008 104 74 0.75IRLZ44S 9090615060 0.028 50 36 1.0IRL530NS 9134963100 0.1 15 11 2.4IRL2910S 91376150100 0.026 48 34 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°SOT-227Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous DrainCurrent 25°C(A)RΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelFully Isolated Low ChargeFA38SA50LC 916155005000.1338240.25H21FA57SA50LC916506255000.0857360.20* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°I-PakThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFU33039164257300.0313321 2.2H8IRFU024N 9133638550.0751610 3.3IRFU41059130248550.0452519 2.7IRFU12059131869550.0273723 1.8IRFU11090524251000.54 4.3 2.7 5.0IRFU120N 91365391000.219.1 5.8 3.2IRFU391091364521000.11159.5 2.4IRFU2109052625200 1.5 2.6 1.7 5.0IRFU22090525422000.80 4.8 3.0 3.0IRFU2149070325250 2.0 2.2 1.4 5.0IRFU2249060042250 1.1 3.8 2.4 3.0IRFU3109059725400 3.6 1.7 1.1 5.0IRFU3209059842400 1.8 3.1 2.0 3.0IRFU4209059942500 3.0 2.4 1.5 3.0IRFUC2090637426004.42.01.33.0I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°I-PakThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)P-ChannelIRFU55059161057-550.11-18-11 2.2H8IRFU53059140289-550.065-28-18 1.4IRFU90149065425-600.50-5.1-3.2 5.0IRFU90249065542-600.28-8.8-5.6 3.0IRFU91109051925-100 1.2-3.1-2.0 5.0IRFU91209052042-1000.60-5.6-3.6 3.0IRFU9120N 9150739-1000.48-6.5-4.1 3.2IRFU92109052125-200 3.0-1.9-1.2 5.0IRFU92209052242-200 1.5-3.6-2.3 3.0IRFU92149165850-2503.0-2.7-1.7 2.5IRFU93109166350-4007.0-1.8-1.12.5N-ChannelLogic LevelIRLU27039133538300.0452214 3.3H8IRLU33039131657300.0313321 2.2IRLU31039133369300.0194629 1.8IRLU024N 9136338550.0651711 3.3IRLU27059131746550.04241715IRLU29059133469550.0273623 1.8IRLU120N 91541391000.18511 6.9 3.2IRLU341091607521000.10159.52.4I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°HEXDIPThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFD014907001.3600.2 1.7 1.2120H9IRFD024906991.3600.1 2.5 1.8120IRFD110903281.31000.54 1.00.71120IRFD120903851.31000.27 1.30.94120IRFD210903861.3200 1.50.60.38120IRFD220904171.32000.80.80.50120IRFD214912711.3250 2.00.570.32120IRFD224912721.3250 1.10.760.43120IRFD310912251.3400 3.60.420.23120IRFD320912261.3400 1.80.600.33120IRFD420912271.3500 3.00.460.26120IRFDC20912281.36004.40.320.21120I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-220Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C (A)R ΘMax.Thermal Resistance(°C/W)1Faxon Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)N-ChannelLow ChargeIRF737LC91314743000.75 6.1** 1.7 3.9H11IRF740LC 910681254000.5510** 1.039IRF840LC 910691255000.858.0** 1.039IRFBC40LC910701256001.26.2**1.039I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFZ24N 9135445550.071712 3.3H12IRFZ34N9127656550.042618 2.7IRFZ44N 9130383550.0244129 1.8IRFZ46N 9127788550.024633 1.7IRFZ48N 9140694550.0165337 1.6IRF1010N 91278130550.0127251 1.2IRF320591279150550.0089869 1.0IRFZ34E 9167268600.0422820 2.2IRFZ44E 91671110600.0234834 1.4IRF1010E 91670170600.01281570.90IRF280791517150750.0137150 1.0IRF520N 91339471000.209.5 6.79.5IRF530N 91351601000.111511 2.4IRF540N 91341941000.0522719 1.6IRF1310N 916111201000.0363625 1.3IRF3710913091501000.0284633 1.0IRF331591623941500.0822115 1.6IRF3415914771501500.0423726 1.0IRFBC209062350600 4.4 2.2 1.4 2.5IRFBC309048274600 2.2 3.6 2.3 1.7IRFBC4090506125600 1.2 6.2 3.9 1.0IRFBE2090610548006.51.81.22.3I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)IRFBE3090613125800 3.0 4.1 2.6 2.0H12IRFBF3090616125900 3.7 3.6 2.3 1.0IRFBG209060454100011 1.40.86 2.3IRFBG309062012510005.03.12.01.0P-ChannelIRF9Z24N 9148445-550.175-12-8.53.3H12IRF9Z34N 9148556-550.10-17-12 2.7IRF530591385110-550.06-31-22 1.4IRF490591280150-550.02-64-45 1.0IRF9530N 9148275-1000.20-13-9.2 2.0IRF9540N 9143794-1000.117-19-13 1.6IRF521091434150-1000.06-35-25 1.0IRF62159147983-1500.29-11-7.81.8I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRL3302 916965720 0.020 39 25 2.2 H12IRL3202 916956920 0.016 48 30 1.8IRL3102 916948920 0.013 61 39 1.4IRL3402 9169711020 0.01 85 54 1.1IRL3502 9169814020 0.007 110 67 0.89IRL2703 913594530 0.04 24 17 3.3IRL3303 913225630 0.026 34 24 2.7IRL3103 913378330 0.014 56 40 1.8IRL2203N 9136613030 0.007 100 71 1.230 0.007 61 43 3.2IRL3803 9130115030 0.006 120 83 1.0IRLZ24N 913574555 0.06 18 13 3.3IRLZ34N 913075655 0.035 27 19 2.7IRLZ44N 913468355 0.022 41 29 1.8IRL3705N 9137013055 0.01 77 54 1.2IRL2505 9132520055 0.008 104 74 0.75IRL520N 9149447100 0.18 10 7.1 3.2IRL530N 9134863100 0.10 15 11 2.4IRL540N 9149594100 0.044 30 21 1.6IRL2910 91375150100 0.026 48 34 1.0I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-220 FullPak (Fully Isolated)Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous DrainCurrent 25°C(A)R ΘMax.Thermal Resistance (°C/W)1Fax on Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)N-ChannelLow ChargeIRFI740GLC91209404000.55 6.0** 3.139H13IRFI840GLC 91208405000.85 4.8** 3.139IRFIBC40GLC91211406001.24.0**3.139I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFIZ24N 9150126550.07139.2 5.8H14IRFIZ34N9148931550.041913 4.8IRFIZ44N 9140338550.02428200.024IRFIZ46N 9130640550.023122 3.8IRFIZ48N 9140742550.0163625 3.6IRFI1010N 9137347550.0124431 3.2IRFI32059137448550.0085640 3.1IRFIZ24E 9167329600.071149.6 5.2IRFIZ34E 9167437600.0422115 4.1IRFI510G 90829271000.54 4.5 3.2 5.5IRFI520N 91362271000.207.2 5.1 5.5IRFI530N 91353331000.11117.8 4.5IRFI540N 91361421000.0521813 3.6IRFI1310N 91611451000.0362216 3.3IRFI371091387481000.0252820 3.1IRFI620G 90832302000.8 4.1 2.6 4.1IRFI630G 90652322000.4 5.9 3.7 3.6IRFI640G 90649402000.189.8 6.2 3.1IRFI614G 9083123250 2.0 2.1 1.3 5.5IRFI624G 9083330250 1.1 3.4 2.2 4.1IRFI634G 90738322500.45 5.6 3.5 3.6IRFI644G 90739402500.287.953.1I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)IRFI720G 9083430400 1.8 2.6 1.7 4.1H14IRFI730G 9065032400 1.0 3.7 2.3 3.6IRFI740G 90651404000.55 5.4 3.4 3.1IRFI734G 9100135450 1.2 3.4 2.1 3.6IRFI744G 91002404500.63 4.9 3.1 3.1IRFI820G 9064130500 3.0 2.1 1.3 4.1IRFI830G 9064632500 1.5 3.12 3.6IRFI840G 90642405000.85 4.6 2.9 3.1IRFIBC20G 90850306004.41.71.1 4.1IRFIBC30G 90851356002.2 2.5 1.63.6IRFIBC40G 9085240600 1.2 3.5 2.2 3.1IRFIBE20G 9085330800 6.5 1.4.86 4.1IRFIBE30G 9085435800 3.0 2.1 1.4 3.6IRFIBF20G 90855309008.0 1.2.79 4.1IRFIBF30G90856359003.71.91.23.6P-ChannelIRFI9Z24N 9152929-550.175-9.5-6.7 5.2H14IRFI9Z34N 9153037-550.10-14-10 4.1IRFI49059152663-550.02-41-29 2.4IRFI9540G 9083742-1000.117-13-9.2 3.6IRFI9540N 9148742-1000.117-13-9.2 3.6IRFI52109140448-1000.06-20-14 3.1IRFI9634G 9148835-2501.0-4.1-2.63.6I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRLI2203N 9137847300.0076143 3.2H14IRLI38039132048300.0066747 3.1IRLIZ24N 9134426550.06149.9 5.8IRLIZ34N 9132931550.0352014 4.8IRLIZ44N 9149838550.0222820 4.0IRLI3705N 9136947550.014733 3.2IRLI25059132763550.00858412.4IRLI520N 91496271000.187.7 5.4 5.5IRLI530N 91350331000.10117.8 4.5IRLI540N 91497421000.04420143.6IRLI291091384481000.02627193.1P-ChannelLogic LevelIRFI9520G 9083537-1000.6-5.2-3.6 4.1H14IRFI9530G 9083638-1000.03-7.7-5.4 3.6IRFI9620G 9087430-200 1.5-3.0-1.9 4.1IRFI9630G 9083840-2000.8-4.3-2.7 3.6IRFI9640G9083940-2000.5-6.1-3.93.1I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-247Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C (A)R ΘMax.Thermal Resistance (°C/W)1Fax on Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)1N-ChannelLow ChargeIRFP350LC912291904000.3018**0.6570H16IRFP360LC 912302804000.2023**0.4598IRFP450LC 912311905000.4016**0.6570IRFP460LC 912322805000.2720**0.4598IRFPC50LC 912331906000.6013**0.6570IRFPC60LC912342806000.4016**0.4598I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not rated。

FLX-2320 S Thin Film Stress Measurement Operation

FLX-2320 S Thin Film Stress MeasurementOperation ManualFor issues related to this instrument, please contact Ling Xie by phone 6-9069 (office) and 617-780-1821 (cell) or email ************1IntroductionThe FLX-2320-S determines stress by measuring the curvature change of pre- andpost- film deposition. The stress calculation is based on Stoney’s equation, whichrelates the biaxial modulus of the substrate, thickness of the film and the substrate,and the curvature change. The stress measurements can be made from -65ºC to 500ºC at a heating rate up to 30ºC/min. Stress variation with temperature can be used tocharacterize film properties such as moisture concentration, phase changes, thermalexpansion, volume changes, and plastic deformations.Other characteristics of the instrument include:•Dual wavelengths•Calculation of biaxial modules of elasticity, linear expansioncoefficient, stress uniformity and file subtraction•Calculation of water diffusion coefficient•2-D and 3-D view of wafer topography•Wafer size: 75 - 200 mm•Measurement temperature: from -65ºC to 500ºC•PC based controller•Speed: 5 seconds for 150 mm wafer•Minimum scan step: 0.02 mm•Maximum points per scan: 12502.Operating Safety•Laser: The FLX-2320 contains two 4 mW solid-state lasers with wavelengths of 670 nm and 780 nm. There is a shutter that will automatically block the laser beamwhen the chamber door is opened for loading and unloading a wafer. Therefore,there will be no reflected laser from sample.•High and Low Temperatures: Do not open the instrument door or touch any inside components, or the sample, until the temperature reading on the front panelreaches room temperature.3.Starting-Up Instrument3.1.Fill in log book first3.2.Turn on the Main Power switch3.3.Turn on the Laser3.4.If using Stress-Temperature mode, turn on the Heater and the Fan3.5.If using Stress-Temperature mode, open the inert and N2 gas valves on the gasmanifold.3.6.If using Stress-Temperature mode and the designed temperature is lower thanroom temperature, open the LN2 tank and the LN2 valve.ing Wafer Locator Rings4.1. A wafer locator ring is used to position the wafer at the center of the samplestage.4.2.Available ring sizes: 3”, 4”, 5”, and 6”; 8” wafers fit directly into the plate.4.3.The locator ring is marked at 30º intervals and has a notch at each 15 º interval.4.4.By rotating the ring and wafer, stress mapping across a whole wafer can beperformed.5.Performing Measurements5.1.Setting up a Process Program5.1.1.From Edit menu, choose Process Program5.1.2.In the Process Program dialog box, select the desired parameters(referencing followings)Field DescriptionMaximum Scan Points a maximum of 1250 points per scan can be usedbut 50 points are sufficient for an accuratemeasurement. Also only 50 data points are savedwith each scan to save space on the hard disk.Low Intensity Alarm Specify an intensity limit below whichmeasurement points will be ignored; 0.2 isrecommended.Elastic Modulus The biaxial elastic modulus of the substrateHole Diameter The diameter of the center region of the substrateto be skipped.Laser Selection Use the drop-down list to select Automatic, 670nm or 780 nm.5.2.First Stress Measurement – measure the stress before film deposition5.3. Single Stress Measurement5.3.1.Enter the same filename as in the First Stress Measurement5.3.2.Enter the same ID as entered in the First Measurement5.4. Stress-Time Measurement5.4.1. A total number of records in a data file are limited to 1000.5.4.2.Enter the same filename as in the First Measurement.5.4.3.Enter the same ID as entered in the First Measurement5.4.4.Enter the Time Interval the wafer will be measured.5.4.5.Enter the total time the wafer will be measured.5.5. Stress-Temperature Measurement5.5.1.Be sure the Heater and Fan on5.5.2.Be sure the inert and N2 gas lines are opened5.5.3.For low temperature measurement, open the LN2 tank and the valve onthe cooling line.5.5.4.For the Temperature Measurement, the glass piece and the hot plate covermust be put on the wafer stage to create a controlled measurementenvironment.5.5.5.Create a recipe5.5.5.1. Enter desired target temperature5.5.5.2. Enter a total time to reach the target temperature or enter a ramp speed.5.5.5.3.Enter a number of scans to be taken.5.5.5.4.Select the next recipe line and enter values. You can enter a maximumof 150 recipe lines and the total number of readings should not exceed1000.5.5.6. After finish the measurement, unload the wafer until room temperature.6.Creating and Displaying Graphs6.1.Creating Graphs6.1.1.Display a data file in the Data Editor window6.1.2.Choose Create from the Graph menu6.1.3.Enter desired parameters6.1.4. Choose the Create Graph button, the graph for the selected file isdisplayed.6.1.5.To display a graph of only some records, select the block of records, thenchoose Create Graph.6.2.Creating a Trend Plot6.2.1.Display a data file in the Data Editor window6.2.2.Choose Trend Plot from the Graph menu in the Data Editor window6.2.3.Enter desired parameters using following references:Field DescriptionUpper SL The Upper Specification Limit in stressLower SL The Lower Specification Limit in stressCalculate STD Y calculates the standarddeviation; the specification limits will not bedisplayed.6.2.4. Choose Trend Plot from the Trend Plot dialog.7.Data Analysis7.1.Diffusion CoefficientNote: The diffusion coefficient graphs only can be calculated from Stress-Timegraphs.7.1.1.To calculate the diffusion coefficient and plot it in a Graph window,choose Diffusion Coefficient from the Analysis menu7.1.2.Select the desired filename7.1.3.Select two points on the graph by double-clicking on the points.7.1.4. A plot of Diffusion Coefficient vs. Time will be displayed.7.2.Materials DatabaseUse the Materials Database option in the Edit menu to display a list ofavailable elastic & expansion coefficients.7.3.Elastic and Expansion Coefficient CalculationNote: Elastic and Expansion Coefficient only can be calculated from Stress-Temperature graphs.e the Stress-Temperature mode to run two temperature cycles on twodifferent substrates with the same film. For best results, use slow heating orcooling (<5ºC/min) to minimize the lag of wafer temperature behind theheating stage.7.3.2.Choose Elastic & Expansion from the Analysis menu7.3.3.Enter the film names7.3.4.Click on two points to plot and display the expansion coefficient.7.3.5.The average values of the expansion coefficient and the biaxial modulusdisplay in a dialog box.7.4.Thermal StressNote: Use the Thermal Stress option to display the thermal stresssuperimposed on the stress-temperature measurement data.7.4.1.Choose Thermal Stress from the Analysis menu7.4.2.Enter the file name7.4.3.Enter the temperature range7.5.Displaying Deflection MapsNote: Use the Deflection Maps to display 3-D view of the deflection. By takingseveral measurements at different angles you can display a complete 3-D mapof deflection over the wafer surface. The deflection can be plotted as thedifference of two groups of measurements (before- and after- a film deposition)or as an absolute deflection of a single measurement.7.5.1.Measure the wafer at different angles using a wafer locator ring.7.5.2.The IDs for each measurement in a group should be identical and in theformat xxxx-###, where XXX is any character (including spaces) and ###is the angular orientation. For example, the IDs for wafer T12 measuredevery 15º would be as follows:T12 - 0 T12 – 60 T12 –120T12 – 15 T12 – 75 T12 -135T12 – 30 T12 – 90 T12 -150T12 – 45 T12 -105 T12 -1657.5.3.When comparing two scans (before and after deposition), the first four IDcharacters must be identical for both scans and the orientation steps usedmust also be the same. Also, the dash must be in the fifth column and the### portion must be right justified.7.5.4.Choose 3DPlotting from the Analysis menu.7.5.5.To change the viewing angle, use the following key combinations:Key Combination DescriptionincrementF7 30ºCTRL + F7 Face on viewincrement10ºALT+F7incrementF8 30ºCTRL + F8 Face on viewincrementALT+F810ºincrementF9 45ºCTRL + F9 90º incrementincrement15ºALT+F9incrementF10 45ºCTRL + F10 90º incrementincrementALT+F10 15ºF11 Compress the view vertically by 50%F12 Stretch the view vertically by 50%8.Shutting-Down the Instrument8.1.Wait for the sample stage to reach room temperature.8.2.Close all open windows and choose Exit from the Measure menu.8.3.Exit from the Program Manager File menu.8.4.Turn off: Laser, Heater, Fan, and Main Power.8.5.Close the inert and N2 gas valves.8.6.Close the LN2 tank and the valve.plete log book.9.Revision HistoryRevision # Date Authors Changes/AdditionsissueXie InitialL.1.0 12/04/2007RevisedMartinE.2.0 4/28/2008RevisedMartinE.2.1 6/16/2008End of Document。

Sennheiser Evolution Wireless Digital EW-DX SK-SKM

DELIVERY INCLUDES• EW-DX EM 2 rack receiver • EW-DX SK bodypack transmitter • EW-DX SKM-S • 2 rod antennas• power supply with country adapters • GA 3 rackmount set • 4 rubber feet• 2 BA 70 rechargeable battery packs • quick guide • safety guide• manufacturer declaration sheetFEATURES EW-DX EM 2• 2 channel half rack (9.5’)• Up to 88 MHz switching bandwidth • PoE IEEE 802.3af Class 3• Equidistant Channel Spacing: 146 channels in standardmode; 293 channels in Link Density Mode • Network enabled for control with Sennheiser ControlCockpit/media control system through a number of 3rd party modules • Clear and easy focused user interface with OLED dis-play • Ethernet connectivity (IPv4 and IPv6)• Secure AES 256 encryption • External PSU 12V/1A •All-metal housingFlexibility for Those Who Want to Choose the Capsule That Best Meets Their NeedsWireless bodypack base set consisting of 1 x EW-DX SKM-S (handheld with mute switch), 1 x EW-DX SK (wirelessbodypack transmitter), 1 x EW-DX EM 2 rackmout receiver (2 channels) and 2 x BA 70 rechargeable batteries. Microphone capsules are sold separately.PRODUCT VARIANTSEW-DX SK-SKM-S BASE SET (Q1-9)470.2 - 550 MHz Art. no. 509462EW-DX SK-SKM-S BASE SET (R1-9)520 - 607.8 MHz Art. no. 509463EW-DX SK-SKM-S BASE SET (S1-10)606.2 - 693.8 MHz Art. no. 509464EW-DX SK-SKM-S BASE SET (S2-10)614.2 - 693.8 MHz Art. no. 509467EW-DX SK-SKM-S BASE SET (S4-10)630 - 693.8 MHzArt. no. 509468EW-DX SK-SKM-S BASE SET (U1/5)823.2 - 831.8 MHz & 863.2 - 864.8 MHz Art. no. 509469EW-DX SK-SKM-S BASE SET (V3-4)925.2 - 937.3 MHzArt. no. 509471EW-DX SK-SKM-S BASE SET (V5-7)941.7 - 951.8 MHz & 953.05 - 956.05 MHz & 956.65 - 959.65 MHz Art. no. 509472EW-DX SK-SKM-S BASE SET (Y1-3)1785.2 - 1799.8 MHzArt. no. 509475FEATURES EW-DX SKM-S• 10mW RF power with up to 100m/328ft working range • Charging contacts for in-device charging with CHG 70N • Persistent eInk display - parameters visible on screeneven when device is not powered on • Programmable mute switch on EW-DX SKM-S - custo-mize the device depending on your professional needs • Function buttons - control all the transmitter settingsdirectly from handheld microphone • Extended runtime with lithium-ion batteries - up to 12hours operation time • Standard capsule interface - compatible with a widerange of Sennheiser and Neumann capsules • Mic input trim control • Metal housingFEATURES EW-DX SK• 3,5 mm jack• 10mW RF power with up to 100m/328ft working range • Charging contacts for in-device charging with CHG 70N • Persistent eInk display - parameters visible on screeneven when device is not powered on • Programmable mute switch - customize the devicedepending on your professional needs • Extended runtime with lithium ion batteries - up to 12hours operation time • Mic input trim control • Metal housingACCESSORIESEW-D ASA (Q-R-S)Active Antenna Splitter470 - 694 MHz Art. no. 508879 EW-D ASA (T-U-V-W)Active Antenna Splitter694 - 1075 MHz Art. no. 508880 EW-D ASA (X-Y)Active Antenna Splitter1350 - 1805 MHz Art. no. 508881 EW-D ASA CN/ANZ (Q-R-S)Active Antenna Splitter470 - 694 MHz Art. no. 508998EW-D AB (Q)Antenna Booster470 - 550 MHz Art. no. 508873 EW-D AB (R)Antenna Booster520 - 608 MHz Art. no. 508874 EW-D AB (S)Antenna Booster606 - 694 MHz Art. no. 508875 EW-D AB (U)Antenna Booster823 - 865 MHz Art. no. 508876 EW-D AB (V)Antenna Booster902 - 960 MHz Art. no. 508877 EW-D AB (Y)Antenna Booster1785 - 1805 MHz Art. no. 508878ADP UHF (470 - 1075 MHz)Passive directional antenna470 - 1075 MHz Art. no. 508863BA 70Rechargeable battery pack for SK and SKM-S Art. no. 508860 L 70 USB Charger for BA 70 rechargeable battery pack Art. no. 508861 EW-D CHARGING SET Set of L 70 USB charger and 2 BA 70 rechargeable battery packs Art. no. 508862 CHG 70N Network-enabled charger for SK, SKM and BA 70Art. no. 509455 CHG 70N + PSU KIT CHG 70N charger with NT 12-35 CS power supply unit Art. no. 509456 EW-D COLOR CODING SET Colored labels for wireless link identification for EM, SKM-S, SK Art. no. 508989 EW-D SK COLOR CODING Colored labels for wireless link identification for SK Art. no. 508990 EW-D SKM COLOR CODING Colored labels for wireless link identification for SKM-S Art. no. 508991 EW-D EM COLOR CODING Colored labels for wireless link identification for EM Art. no. 508992MICROPHONE COMPATIBILITYLavalier and headset microphones compatible with the EW-DX SK bodypack transmitterME 2Omni-directional lavalier microphoneModels produced from 2021 onward, featuring a gold-plated connector*ME 4Cardioid lavalier microphoneModels produced from 2021 onward, featuring a gold-plated connector*MKE Essential Omni Omni-directional lavalier microphoneMKE 2 Gold Omni-directional lavalier microphoneModels produced from 2018 onward, featuring a blue serial number plateMKE 1Omni-directional lavalier microphoneME 3Cardioid headset microphoneModels produced from 2021 onward, featuring a gold-plated connector*HSP Essential Omni Omni-directional headset microphoneHSP 2Omni-directional headset microphoneModels produced from March 2020 onward (featuring code 1090 or later)HS 2Omni-directional headset microphoneModels produced from 2021 onward, featuring a gold-plated connector*SL Headmic 1Omni-directional headset microphone* Models produced prior to 2021 will feature a nickel connector. Earlier models may pick up noise when placed close to the transmitter and are not recommended for useMicrophone modules compatible with the EW-DX SKM-S handheld transmitterMMD 835-1Dynamic microphone module with cardioid polar patternMMD 845-1Dynamic microphone module with supercardioid polar patternMME 865-1Pre-polarized condenser microphone module with supercardioid polar patternMMD 935-1Dynamic microphone module with cardioid polar patternMMD 945-1Dynamic microphone module with supercardioid polar patternMMK 965-1Condenser microphone module with switchable cardioid and supercardioid polar pattern MMD 42-1Dynamic microphone module with omni-directional polar patternNeumann KK 204Condenser microphone module with cardioid polar patternNeumann KK 205Condenser microphone module with supercardioid polar patternMM 435Dynamic microphone module with cardioid polar patternMM 445Dynamic microphone module with supercardioid polar patternME 9002Pre-polarized condenser microphone module with omni-directional polar patternME 9004Pre-polarized condenser microphone module with cardioid polar patternME 9005Pre-polarized condenser microphone module with supercardioid polar patternSPECIFICATIONS SystemAudio link frequency ranges Q1-6R1-6R4-9S1-7S4-7S7-10U1/5V3-4Y1-3470.2 - 526 MHz520 - 576 MHz552 - 607.8 MHz606.2 - 662 MHz630 - 662 MHz662 - 693.8 MHz823.2 - 831.8 MHz &863.2 - 864.8 MHz925.2 - 937.3 MHz1785.2 - 1799.8 MHzBluetooth® Low Energy(BLE) frequency range2402 - 2480 MHzAudio frequency response20 Hz - 20 kHz (-3 dB)@ 3 dBfsAudio THD≤ -60 dB for 1 kHz@ -3 dBfs input level Dynamic range134 dBSystem latency 1.9 msOperating temperature-10 °C - +55 °C(14 °F - 131 °F)Relative humidity 5 - 95 % (non-condensing)EW-DX EM 2 (Rack Receiver)Input voltage11 - 13 V ⎓orPoE IEEE 802.3af Class 0(CAT5e or higher)Input current≤ 1 ATransmit power(radiated)BLE: max. 10 mW EIRP Audio output power18 dBu max.Headphone output2x 70 mW @ 32 ΩEthernet RJ-45 socket, IEEE802.3100Base-TX (half+full duplex)10Base-T (half+full duplex)(CAT5e or higher) Dimensions212 x 44 x 189 mm(8.35" x 1.73" x 7.44") Weight approx. 1000 g (2.2 l bs)(without antennas and powersupply)EW-DX SKM-S (Handheld Transmitter)Input voltage 2.0 - 4.35 VInput current< 300 mAPower supply 2 AA batteries 1.5 V(alkali manganese) orBA 70 rechargeablebattery packOccupied bandwidth200 kHzTransmit power (radiated)Audio link: 10 mW ERP(Range Y1-3: 12 mW ERP)LD mode: 10 mW ERPBLE: max. 10 mW EIRP Dimensions (ø x l)(incl. MMD 835 microphonemodule)(without microphonemodule)50 x 268 mm (1.97" x 10.55")40 x 200 mm (1.57" x 7.87")Weight (without batteries)(incl. MMD 835 microphonemodule)(without microphonemodule)approx. 304 g (0.67 l bs)approx. 195 g (7.14 lbs)EW-DX SK (Bodypack Transmitter)Input voltage 2.0 - 4.35 VInput current< 300 mAPower supply 2 AA batteries 1.5 V(alkali manganese) orBA 70 rechargeablebattery packOccupied bandwidth200 kHzTransmit power (radiated)Audio link: 10 mW ERP(Range Y1-3: 12 mW ERP)LD mode: 10 mW ERPBLE: max. 10 mW EIRP Dimensions (without anten-na)63.5 x 85 x 20 mm(2.5" x 3.35" x 0.79") Weight (without batteries)approx. 115-120 g(0.26-0,27 - l bs)EW-DX EM 2DIMENSIONSDIMENSIONS EW-DX SK5907611785-1800 MHZ 203.8 / 8.02"590758941-960 MHZ 157.8 / 6.21"590757925-938 MHZ157.8 / 6.21"590756823-832 MHZ & 863-865 MHZ166.2 / 6.54"590755630-694 MHZ 195.8 / 7.71"590754614-694 MHZ195.8 / 7.71"590753606-638 MHZ & 650-694 MHZ195.8 / 7.71"590752606-694 MHZ 195.8 / 7.71"590751520-608 MHZ 217.8 / 8.57"470-550 MHZ 231.8 / 9.13"Teile-Nr.Part no.Frequenzbereich Frequency rangeL590750DIMENSIONS 40.31.59Mikrofonmodul MMD835 - nur Beispiel microphon module MMD835 - example only341.34268.510.5750.51.99200.77.9156.56.16EW-DX SKM-SARCHITECT‘S SPECIFICATIONEW-DX EM 2 rack receiverThe stationary two-channel receiver with switching diver-sity technology shall be for use with up to two companion transmitters as part of a digital wireless RF transmission system.The receiver shall operate within the following UHF fre-quency ranges, with a switching bandwidth of up to 88 MHz: 470.2 – 550 MHz, 520 – 607.8 MHz, 606.2 – 693.8 MHz, 614.2 – 693.8 MHz, 630 – 693.8 MHz, 823.2 – 831.8 MHz, 863.2 – 846.8 MHz, 925.2 – 937.3 MHz, 941.7 – 951.8 MHz, 953.05 – 956.05 MHz, 956.65 – 959.65 MHz, 1785.2 – 1799.8 MHz. Different frequency variants shall be available depending on country-specific regulations.The receiver shall feature Bluetooth® Low Energy (BLE) at a frequency range between 2402 and 2480 MHz for remote controlling the devices via a control App for iOS and And-roid.The receiver shall feature an automatic frequency setup function with spectrum scan functionality in order to es-tablish an equidistant frequency grid with 146 channels in standard mode and 293 channels in Link Density Mode. The audio frequency response shall be between 20 Hz and 20 kHz (-3 dB). Audio total harmonic distortion (THD) shall be≤****************************************** shall be 134 dB. System latency shall be 1.9 ms.The receiver shall be menu-driven with an OLED display showing the current frequency, channel number, metering of RF level, metering of AF level, lock status, muting fun-ction, antenna switching diversity, app connection, gain, audio output level, menu and battery status for each of the two associated transmitters. An auto-lock feature shallbe provided to prevent settings from being accidentally altered.The following settings shall be configurable by function buttons and an encoder for each channel in the menu: frequency, channel name, gain, trim, AF output, low cut, AES 256 encryption, test tone, network settings, integrated antenna booster settings, display brightness, device name, auto setup settings for automatic frequency setup.For each of the two channels the receiver shall feature a balanced XLR-3M audio output with a maximum outputof +18 dBu along with an unbalanced 6.3 mm (¼“) audio output with a maximum output of +12 dBu.For secure transmission the receiver shall feature AES 256 encryption.The receiver shall provide a walktest mode for monitoring the RF and AF signal status in the location over time.Two BNC-type input sockets shall be provided for connec-ting the antennas. The receiver shall be usable with active and passive wide range UHF antennas for the entire sup-ported RF spectrum.A headphone output with headphone volume control shall be provided and shall utilize a 6.3 mm stereo jack socket. The receiver shall have an Ethernet port (RJ-45) for remote network-based monitoring and control using the Sennhei-ser Control Cockpit software or the Sennheiser Wireless Systems Manager software.The receiver shall operate on 12 V DC power supplied from the power supply unit or on Power over Ethernet (PoE IEEE 802.af Class 0). Power consumption shall be ≤ 1 A.The receiver shall have a rugged metal housing; dimensi-ons shall be approximately 212 x 44 x 206 mm (8.35“ x 1.73“ x 8.11“). Weight shall be approximately 1000 grams (2.2 lbs) without antennas and power supply. Operating tempera-ture shall range from −10 °C to +50 °C (+14 °F to +122 °F). The receiver shall be the Sennheiser EW-DX EM 2.EW-DX SK bodypack transmitterThe bodypack transmitter shall be for use with a compa-nion receiver as part of a digital wireless RF transmission system.The bodypack transmitter shall operate within the follo-wing UHF frequency ranges, with a switching bandwidth of up to 88 MHz: 470.2 – 550 MHz, 520 – 607.8 MHz, 606.2 – 693.8 MHz, 614.2 – 693.8 MHz, 630 – 693.8 MHz, 823.2 – 831.8 MHz, 863.2 – 846.8 MHz, 925.2 – 937.3 MHz, 941.7 – 951.8 MHz, 953.05 – 956.05 MHz, 956.65 – 959.65 MHz, 1785.2 – 1799.8 MHz. Different frequency variants shall be available depending on country-specific regulations.The audio frequency response shall be between 20 Hz and 20 kHz (-3 dB). Audio total harmonic distortion (THD) shall be≤****************************************** shall be 134 dB. System latency shall be 1.9 ms. Occupied bandwidth shall be 200 kHz. Transmit power (radiated) shall be 10 mW ERP (1785.2 – 1799.8 MHz Range:12 mW ERP).A programmable mute switch shall be provided for muting or unmuting either the audio signal or the radio signal. The mute switch can also be deactivated.The bodypack transmitter shall be menu-driven with a backlit eInk display showing the relevant status informati-on such as frequency, battery status or AES 256 encrypti-on status.All transmitter parameters shall be adjustable with functi-on buttons on the device itself or by Bluetooth Low Energy (BLE) synchronization via the associated receiver. The fun-ction buttons shall be lockable against accidental misuse. Power shall be supplied to the bodypack transmitter by two 1.5 V AA size batteries or by one Sennheiser BA 70 rechargeable battery pack. Operating time shall be typical-ly 12 hours with a battery pack and up to 8 hours with AA batteries.The bodypack transmitter shall feature charging contacts for direct charging of the transmitter with inserted BA 70 battery pack in a Sennheiser CHG 70N network-enabled charger.The bodypack transmitter’s microphone/line input shall utilize a lockable 3.5 mm Jack socket.The bodypack transmitter shall be compatible with micro-phones for every application: Sennheiser lavalier micro-phones ME 2, ME 4, MKE 1, MKE 2 Gold and MKE Essential Omni, Sennheiser headset microphones HS 2, HSP 2, HSP Essential Omni, ME 3 and SL Headmic 1.The bodypack transmitter shall have a rugged metal housing; dimensions shall be approximately 63.5 x 85 x 20 mm (2.5” x 3.35” x 0.79“). Weight without batteries shall be approximately 115 - 120 grams depending on antenna length. Operating temperature shall range from −10 °C to +50 °C (+14 °F to +122 °F).The handheld transmitter shall be the SennheiserEW-DX SK.EW-DX SKM-S handheld transmitterThe handheld transmitter shall be for use with a compa-nion receiver as part of a digital wireless RF transmission system.The handheld transmitter shall operate within the following UHF frequency ranges, with a switching bandwidth of up to 88 MHz: 470.2 – 550 MHz, 520 – 607.8 MHz, 606.2 – 693.8 MHz, 614.2 – 693.8 MHz, 630 – 693.8 MHz, 823.2– 831.8 MHz, 863.2 – 846.8 MHz, 925.2 – 937.3 MHz, 941.7 – 951.8 MHz, 953.05 – 956.05 MHz, 956.65 – 959.65 MHz, 1785.2 – 1799.8 MHz. Different frequency variants shall be available depending on country-specific regulations.The audio frequency response shall be between 20 Hz and 20 kHz (-3 dB). Audio total harmonic distortion (THD) shall be≤****************************************** shall be 134 dB. System latency shall be 1.9 ms. Occupied bandwidth shall be 200 kHz. Transmit power (radiated) shall be 10 mW ERP (1785.2 – 1799.8 MHz Range:12 mW ERP).A programmable mute switch shall be provided for muting or unmuting either the audio signal or the radio signal. The mute switch can also be deactivated.The handheld transmitter shall be menu-driven with a backlit eInk display showing the relevant status informati-on such as frequency, battery status or AES 256 encrypti-on status.All transmitter parameters shall be adjustable with functi-on buttons on the device itself or by Bluetooth Low Energy (BLE) synchronization via the associated receiver. The fun-ction buttons shall be lockable against accidental misuse. Power shall be supplied to the handheld transmitter by two 1.5 V AA size batteries or by one Sennheiser BA 70 rechar-geable battery pack. Operating time shall be typically12 hours with a battery pack and up to 8 hours with AA batteries.The handheld transmitter shall feature charging contacts for direct charging of the transmitter with inserted BA 70 battery pack in a Sennheiser CHG 70N network-enabled charger.The handheld transmitter shall utilize Sennheiser’s stan-dard capsule interface serving Sennheiser microphone modules of the evolution wireless and 2000 series and Digital 6000 and 9000 as well as the Neumann KK 204 / 205 microphone modules.The handheld transmitter shall have a rugged metal housing; dimensions shall be approximately 50 mm (1.97“) in diameter and 268 mm (10.55“) in length including a Sennheiser MMD 835 microphone module. Weight inclu-ding MMD 835 microphone module shall be approximately 304 grams (0.67 lbs). Operating temperature shall range from −10 °C to +50 °C (+14 °F to +122 °F).The handheld transmitter shall be the SennheiserEW-DX SKM-S.Sennheiser electronic GmbH & Co. KG · Am Labor 1 · 30900 Wedemark · Germany · 。

Dycotec DM-SIJ-3201纳米银喷墨打印墨水说明书

Product DescriptionDycotec DM-SIJ-3201 is a nanosilver ink-jet printable ink that is used for general printed electronics applications such as sensors, heaters and solar cell. The ink offers excellent adhesion on a broad range of substrates including glass, ITO-glass, PET and polyimide.Product Benefits• Excellent adhesion (5B) on a broad range of substrates including glass and ITO-glassInk PreparationGently stir before use. Avoid incorporating air bubbles. Once printed, the Ink should be dried at 60-80o C for 20 mins prior to curing.Properties of Uncured InkTest PropertiesViscosity after mixing (cP) 12-20(Cone and plate 500s-1, 25o C)Thinner For slight adjustments in viscosity, use DM-SIJ-3201-DTDensity 1.5-1.6 g/cm3Surface Tension (mN/m) 32-35Solids Content 36-40 %Ink Processing ConditionsParameter Typical PropertiesSubstrate Glass, ITO-glass, PET, PIDeposition Method Ink-Jet, tested on 30 pL Spectra SE, 90-130 V, 25-35o CThe ink can be dried using either a convection oven or using IR heating. Typical drying parameters used are 60-80o C for 20 mins. Drying times may be reduced to achieve the optimum resistivity depending on manufacturing process set-up. The ink should then be sintered in a temperature range from 100-180o C for 10-30 mins.Properties of Cured InkTest Typical PropertiesSheet Resistance on glass 5 mΩ//25µm at 140o C, 4 mΩ//25µm at 180o CVolume Resistivity on glass 12.5 µΩ.cm at 140o C, 10 µΩ.cm at 180o CAdhesion 5BTypical Dry Film Thickness 1-2 µm depending on print deposition set-upClean-UpEquipment can be conditioned or cleaned using propylene glycol methyl ether acetate. Alcohols such as IPA should not be used.Storage and shelf-lifeContainers should be stored in a fridge at a storage temperature between 4-7˚C with lids tightly sealed. The ink shelf-life for an unopened container is 6 months from date of shipment. Avoid introduction of water into the paste. Dycotec Materials cannot assume responsibility for an ink that has not been stored in appropriate conditions or where the ink have been contaminated following use.Safety and HandlingFor safe use of this product, please review relevant material safety and datasheet (MSDS).For more information, please contact:Dycotec Materials LtdUnit 6, Stanier RoadPorte Marsh Industrial EstateCalne, Wiltshire UKEmail:*************************Tel: +44 (0)1793 422598All information reported in the datasheet is for experimental work undertaken in our laboratories and illustrates typical values only. Processing conditions may vary depending on customers’ experience and their application requirements and manufacturing process equipment set-up.Note: The data contained herein are furnished for information only and are believed to be reliable. We cannot assume responsibility for the results obtained by others over whose methods we have no control.It is the user’s responsibility for the results obtained by others over whose methods we have no control. It is the user’s responsibility to determine suitability for the user’s purpose of any production methods mentioned herein and to adopt such precautions as may be advisable for the protection of property and of persons against any hazards that may be involved in the handling and use thereof. In light of the foregoing, Dycotec Materials specifically disclaims all warranties expressed or implied, including warranties of merchantability or fitness for a particular purpose, arising from sale of use of Dycotec Material’s products. Dycotec Materials specifically disclaims any liability for consequential or incidental damages of any kind, including lost profits. The discussion herein of various processes or compositions is not to be interpreted as representation that they are free from domination of patents owned by others or as a license under any Dycotec Material patents that may cover such processes or compositions. We recommend that each prospective user test his proposed application before repetitive use, using this data as a guide. This product may be covered by one of or more UK or foreign patents or patent applications.Copyright © 2021。

AFL FLX380 FlexTester3 系列产品说明书

3 or (800) 321-5298, (603) 528-7780© 2013, AFL, all rights reserved. FLX3-3X-2000 Revision 1C 2013-09-30Specifications are subject to change without notice.FLX380 MODELS FEATURES-300-302-303-304Compatible with all NOYES optical power meters and laser sources, including tone and Wave ID features Compatible with NOYES optical fiber identifiers (OFI)Integrated high-power optical power meter with Wave ID and tone detection Integrated Visual Vault Locator (VFL with visible red laser)1310 nm – OTDR, PON OTDR, laser source (CW, Wave ID, tone generation)1550 nm – OTDR, PON OTDR, laser source (CW, Wave ID, tone generation)1490 nm – OTDR, PON OTDR, laser source (CW, Wave ID, tone generation)1625 nm – FTTx Live PON OTDR with 1625 nm filtered detector for in-service PON testing 1650 nm – FTTx Live PON OTDR with 1650 nm filtered detector for in-service PON testingFTTx PON Power Meter (Detects and measures downstream 1490 and/or 1550 nm PON power levels)Features and Applications by ModelFLX380 MODELS FIBER TESTING APPLICATIONS -300-302-303-304Point-to-point fiber optic cable installation test and troubleshootingVerify end-to-end length, loss and return loss. Verify splice and connector loss and reflectance. Locate source of excess loss and/or reflections, including micro- or macro-bends.FTTx PON construction testTest to or through splitters. Verify end-to-end length, loss and return loss. Verify splitter, splice and connector loss and reflectance. Locate source of excess loss and/or reflections, including micro- or macro-bends. aFTTx customer fiber troubleshooting – dark fibersLocate cable cuts, open splices, micro- or macro-bends and bad connections FTTx in-service (Live PON) troubleshootingAutomatically detect live PONs. Prevent service-disrupting 1310/1550 nm OTDR tests on live PONs. Locate macro bends, poor splices or high-loss connections without disrupting service to active PON subscribers.FTTx service turn-up (commissioning)Verify PON power levels at the ONT (subscriber) location. Locate faults in distribution or drop cables, or between splitters in PONs built using distributed splitter architecture, all without disrupting service to active PON subscribers.Note:a. Adds 1490 nm OTDR and OLS. Testing at 1310 / 1550 nm is recommended and typically all that is needed to test FTTx PONs during construction.FLX380-303 and -304 modelsFLX380-300 and -302 models FLX380-303, 304FLX380-300, -302Visual Fault LocatorVisual Fault LocatorOptical Power Meter Optical Power Meter Dark Fiber OTDR Dark Fiber OTDR Live Fiber OTDR PON Power MeterLaser Source Laser SourceFLX380-30x FlexTester 3 OTDR or (800) 321-5298, (603) 528-7780includes the DFS1 Digital FiberScope, hand-held DFD1 Touchscreen Tablet for viewing connector end-faces, plus UPC or APC inspection adapter tips (depending on selected OTDR ferrule type). It enables inspection of both the ferrule ends of male connectors and the end-faces of connectors mounted inside bulkhead adapters on equipment panels. FOCIS PRO includes image capture, save, AFL’s unique image-pairing capability, plus IEC and user-adjustable pass/fail analysis. FlexTester Click cleaners for common 2.5 and 1.25 mm connectors, along with cleaning fluid and cleaning sticks for more stubborn contamination.With the FOCIS PRO’s dedicated Touchscreen Tablet, the FLX380 is always available for OTDR and optical loss testing.The FLX380, FOCIS PRO kit, accessories and cleaning supplies are packaged in a waterproof, rugged hard carry case. The carry case also accommodates commonaccessories, such as a single-mode launch fiber ring (FR1-SM) or Optical Fiber Identifier (OFI-400), ordered separately.FLX380 FlexTester PRO Test and Inspection kitFLX380 FlexTester in Soft Carry CaseFLX380 FlexTester 3 Complete FTTx Installation and Maintenance Test KitSelect a FlexTester 3 Complete kit for an even more complete broadband network installation and maintenance test solution.FlexTester 3 Complete kits combine an OFI-200D Optical Fiber Identifier and 150 m singlemode fiber ring (launch cable) with a user-selected FLX380-30x, FOCIS PRO, UPC or APC adapter tips, two One-Click cleaners and standard FlexTester rugged carry case used for FlexTester PRO kits. The carry case includes room for additional cleaning supplies and an additional fiber ring (receive cable).PRO and FlexTester 3 Complete kits save money and organize and protect commonly required test sets and accessories in a single lightweight, waterproof carry case.FLX380 FlexTester 3 in Soft Carry CaseFLX380 FlexTester 3 kits are also available in a soft carry case, which includes the user-selected FLX380, standard accessories, and One-Click cleaner.5 or (800) 321-5298, (603) 528-7780© 2013, AFL, all rights reserved. FLX3-3X-2000 Revision 1C 2013-09-30Specifications are subject to change without notice.OTDR (POINT-TO-POINT, PON, LIVE PON)Emitter Type Laser Safety Class Class 1 FDA 21 CFR 1040.10 and 1040.11, IEC60825-1: 2007-03Fiber Type Single-mode Available Wavelengths 1310 / 1490 / 1550 / 1625 / 1650 nm Wavelength Tolerance ±20 / ±20 / ±20 / ±10 / ±10 nmDynamic Range (SNR=1)b41 / 38 / 41 / 38 / 38 dB (20 µs pulse)22 / 19 / 22 / 19 / 19 dB (100 ns pulse)Event Dead Zone c0.8 m Attenuation Dead Zone d 2.5 mPON Dead Zone e30 m Pulse widths 5, 10, 30, 100, 300 ns; 1, 3, 10, 20 µs Range Settings 250 m to 240 km Data PointsUp to 30,000Data Point Spacing 5.0 cm (range <1.5 km);Range/30,000 (range >1.5 km)Group Index of Refraction 1.4000 to 1.7000Distance Uncertainty (m)±(1 + 0.005% x distance + data point spacing)Linearity±0.05 dB/dBTrace File Format Telcordia SR-4731 Issue 2Trace File Storage Medium 4 GB internal memory (>1000 traces)Data Transfer to PC USB cable or Bluetooth ® wireless PON OTDR Modes To Splitter, Through Splitter, Expert Standard OTDR ModesFull Auto, Expert, Real TimeOPTICAL POWER METER Calibrated Wavelengths 1310, 1490, 1550, 1625, 1650 nm Detector TypeInGaAsMeasurement Range +23 to -50 dBm Tone Detect Range +3 to -35 dBm Wavelength ID Range +3 to -35 dBm Accuracy h ±0.25 dB Resolution0.01 dBMeasurement UnitsdB, dBm or Watts (nW, µW, mW)PON POWER METER FOR SINGLE-MODE ONLY Calibrated Wavelengths 1490, 1550 nm Detector Type Filtered InGaAs Isolation>40 dBMeasurement Range +23 to -50 dBm Accuracy g ±0.5 dB Resolution0.01 dBMeasurement UnitsdBm or Watts (nW, µW, mW)OPTICAL LASER SOURCE (OLS)Emitter Type, Safety Class Class I, FDA 21 CFR 1040.10 and 1040.11,IEC 60825-1: 2007-03Fiber Type Single-mode Available Wavelengths 1310, 1490, 1550, 1625, 1650 nm Wavelength Tolerance ±20 nm (1310/1490/1550)±10 nm (1625/1650)Spectral Width (FWHM) 5 nm (maximum)Internal Modulation 270 Hz, 330 Hz, 1 kHz, 2 kHz, CW Wave ID (one, two, or three wavelengths)Compatible with NOYES Optical Power Meters and Light SourcesOutput Power Stability f±0.2 dB Output Power -1 dBm ±1.5 dB VISUAL FAULT LOCATOR (VFL)Emitter Type Visible red laser, 650 ±20 nm Safety Class Class II FDA 21 CFR 1040.10 and 1040.11,IEC 60825-1: 2007-03Output Power (nominal)0.8 mW into single-mode fiber Modes CW, 2 Hz flashing GENERALSize (in boot)20.1 x 13.0 x 5.3. cm (7.9 x 5.1 x 2.1 in)Weight0.8 kg (1.8 lb)Operational Temperature -10 °C to +50 °C, 0 to 95 % RH (non-condensing)Storage Temperature -20 °C to +60 °C, 0 to 95 % RH (non-condensing)Power Rechargeable Li-Ion or AC adapter Battery Life 13.5 hours, Telcordia test conditions 12.5 hours, backlight on, continuous test DisplayLCD, 320 x 240, 3.5 in (89 mm), color, high-contrast transflective with backlight and AR coating.Specifications aNotes:a. All specifications valid at 25 °C unless otherwise specified.b. Measured using 240 km range, 20 µs pulse and 3 min averaging.c. Typical distance between the two points 1.5 dB down each side of a reflective spike caused by a -45 dB event using 5 ns pulse width.d. Typical distance from the location of a -45 dB reflective event to the point where the trace falls and stays within 0.5 dB of backscatter, using a 5 ns pulse width.e. Typical distance from the start of a 1x16 splitter (13 dB loss) to the point where the trace falls and stays within 0.5 dB of backscatter, using a 100 ns pulse width with high resolution.f. Over 8 hours.g. At calibration wavelengths and power levels of approximately -5 dBm for 1550 nm and -10 dBm for 1490 nm.h. At 1310/1550 nm wavelengths with CW power level of approximately -10 dBm.FLX380-30x FlexTester 3 OTDR6 or (800) 321-5298, (603) 528-7780© 2013, AFL, all rights reserved. FLX3-3X-2000 Revision 1C 2013-09-30Specifications are subject to change without notice.NOYES International Sales and Service Contact InformationAvailable at /NOYES/ContactsCalibration PlansAFL recommends annual calibrations on NOYES Test and Inspection products. Prepaid Cal plans offer two annual calibrations at a discounted price, a convenient calibration expiration email service, express calibration services and access to the NOYES product knowledge base. Cal Plus plans offer the same services as the Cal plans with the addition of a two year extended warranty (three years total coverage).FLX380 MODEL 2 YR CAL PLAN, 2 YR CAL PLUS PLAN AFL NO.AFL NO.FLX380-300CAL2-00-FLX3-300CAL2-01-FLX3-300FLX380-302CAL2-00-FLX3-302CAL2-01-FLX3-302FLX380-303CAL2-00-FLX3-303CAL2-01-FLX3-303FLX380-304CAL2-00-FLX3-304CAL2-01-FLX3-304Available AccessoriesDESCRIPTIONAFL NO.FC adapter for OTDR / OLS port 2900-50-0002MR SC adapter for OTDR / OLS port 2900-50-0003MR ST adapter for OTDR / OLS port 2900-50-0004MR LC adapter for OTDR / OLS port 2900-50-0006MR FC adapter for OPM port 2900-52-0001MR SC adapter for OPM port 2900-52-0002MR ST adapter for OPM port 2900-52-0003MR LC adapter for OPM port2900-52-0004MR 2.5 mm Universal adapter for OPM port 2900-52-0005MR 1.25 mm Universal adapter for OPM port 2900-52-0006MR 2.5 mm Universal adapter for VFL port 2900-53-0001MR 1.25 mm Universal adapter for VFL port 2900-53-0002MR Fiber Ring, Single-mode, 150 m (492 ft)FR1-SM-150-y1-y2Fiber Ring, Single-mode, 500 m (1640 ft)FR1-SM-500-y1-y2Fiber Ring, Single-mode, 1000 m (3280 ft)FR1-SM-1000-y1-y2y1, y2 – connectors for single-mode cables, specify type as follows:ST, SC, ASC (angled SC), FC, AFC (angled FC), LCOther connector types, fiber types, and fiber lengths quoted upon request.FLX380-30x FlexTester 3 OTDROrdering InformationFLX380 PRO kits include hard carry case, FOCIS PRO kit, and cleaning supplies. FlexTester 3 Complete kits add fiber ring and OFI-200D Optical Fiber Identifier. FLX380 with soft carry case option includes a 2.5 mm One-Click cleaner. All FLX380 FlexTester 3 models come with (1) SC adapter for the OTDR/OLS port, (1) 2.5 mm OPM port universal adapter, (1) 2.5 mm VFL port universal adapter, USB cable (connects with Type A USB port on your PC), TRM 2.0 Basic software, rechargeable, replaceable Li-Ion battery and AC adapter with power cord. Select options as follows: Optical Configuration (NNN), OTDR port type (F), Language Package (LLL), optional PRO kit configuration. Example: FLX380-303U-ENG-PRO indicates a three-wavelength (1310/1550/1625 nm) FLX380 FlexTester 3 with UPC OTDR port ferrule, English / Euro language package with English QRG, PRO Kit configuration with FOCIS PRO and cleaning supplies.OTDR Port Ferrule (F)A = APC U = UPCFlexTester 3 Kit Options (KIT):(Absent) = Standard kit PRO = F lexTester 3 PRO Kit CMP = F lexTester 3 Complete KitQuick Reference Guide Language (LLL)Optical Configuration (NNN)300 = 1310/1550 nm302 = 1310/1490/1550 nm303 = 1310/1550/1625 nm, Live PON OTDR, PON Meter 304 = 1310/1550/1650 nm, Live PON OTDR, PON Meter NNNFLLLKITFLX380ENG = EnglishCHS = Chinese, Simplified CHT = Chinese, Traditional DEU = GermanFRA = French ITA = Italian JPN = Japanese KOR = KoreanPOL = Polish POR = Portuguese SPA = Spanish TUR = Turkish。

Flexus Thin Film Stress Measurement说明书

Marvell NanoLab Member login Lab Manual Contents MercuryWeb Berkeley MicrolabChapter 8.52Flexus Thin Film Stress Measurement(flexus - 380)1.0 TitleFlexus Thin Film Stress Measurement2.0 PurposeFlexus (Tencor FLX-2320) is a thin-film stress measurement instrument. It accurately measures the changes in the radius of curvature of the substrate caused by the deposition of a stressed thin film on the substrate.Flexus can also measure the Elastic constant and thermal expansion coefficient of a thin film, if the thickness of the film and the substrate are known.3.0 ScopeThis document describes the procedures of measuring thin-film stress and how to set up a measuring program. For film elastic constant and thermal expansion coefficient measurements, and advanced 3-D stress plot, please refer to Section 4.0.4.0 Applicable DocumentsRevision HistoryTencor FLX-2320 Thin Film Stress Measurement User Manual (one copy in office, one clean room copy in the drawer under the Flexus).5.0 Definitions & Process Terminology5.1 Laser InterferometerFlexus uses a laser interferometer to measure the curvature of a wafer, which is used in thecalculation of the stress in the film deposited on the wafer.5.2 Intrinsic StressThe stress of a film at the deposition temperature. It is mainly caused by the atomic structuremismatch between the film and substrate.5.3 Thermal StressThe film stress changes between the deposition and the measurement temperatures. It is mainlycaused by the difference of the thermal expansion coefficients between the film and substrate. 6.0 Safety6.1 LaserThe Flexus contains two solid-state Class III lasers. Do not defeat the electrical or mechanicalinterlocks. When the interlocks are defeated, laser beams of medium power could be present. It ishazardous. Do not expose the laser beam directly which could damage to your eyes.6.2 High TemperatureThe hot plate and measurement platform are very hot (up to 500°C) when the heater is operatingfor film elastic constant and thermal expansion coefficient measurements. Do not open theinstrument door, touch the inside components, or the wafer, if the temperature displayed on theupper left corner of the instrument is above 40°C.7.0 Statistical/Process DataThe Flexus is tested using two calibrated mirrors (flat and 20-meter curvature) monthly. Please contact the process staff for the data.8.0 Available Processes, Gases, Process Notes8.1 Available Measurement Programs8.1.1 Program 100: Standard program for 4” wafers. 50 measure points with 10 mm edgeexclusion. Wafer thickness is set at 525 μm.8.1.2 Program 150: Standard program for 6” wafers. 50 measure points with 15 mm edgeexclusion. Wafer thickness is set at 690 μm.8.2 Process Notes8.2.1 Flexus stress measurement only works on blank wafers, not patterned wafers.8.2.2 Film stress measured is inversely proportional to square of wafer thickness. Please verifythat your wafer thickness matches the program setting, especially if you are using testgrade wafers.8.2.3 The surface of the wafer must be reflective for the laser to bounce back into the detectingdevice. Rough surfaces will scatter the laser and affect the measurement.8.2.4 The Flexus compares curvature of the wafer before and after film deposition to calculatefilm stress. Both pre- and post-deposition measurements are required. If wafer iscoated on both side, e.g. deposited in Tystar LPCVD furnaces, the backside film needs tobe removed before post-deposition measurements is done.8.2.5 If you forgot to do pre-deposition measurement before film deposition, you still canmeasure the film stress. First, strip the backside film on the wafer, and measure it as pre-deposition. Then, strip the front side film, and measure as post-deposition. The stress willreverse, e.g. tensile measured is actually compressive, and vice versa. Since there willbe no film left on the wafer, this method only works on a test wafer.8.2.6 Do not try to adjust any knobs on the Flexus. By doing so, you may cause the laser tomisaligned. The manufacture voids the warranty and service agreement for un-authorizedadjustment on the tool.8.2.7 For high temperature measurements, the hot plate cover (stored in the drawer under theFlexus) must be installed and secured with 4 thumbscrews. Make sure the chamber fanis ON. Failing to do so will overheat the electronic parts and the laser.9.0 Equipment Operation9.1 System DescriptionThe Flexus is controlled by a PC for measurements, data acquisition, and result calculation. ThePC is running WINDOWS 3.1. The measurement results are stored in the user’s subdirectory,which should be set up when the user is qualified for the tool.The front view of the FLX-2320 instrument is shown in Section 11.1. For normal stressmeasurement, the hot plate cover and thumbscrews are not used. The user needs to select aproper Wafer Locator Ring, which is shown in Section 11.2, for the size of the wafer to be measured. All the wafer locator rings are stored in the drawer under the Flexus.9.2 Making a Measurement9.2.1 Enable Flexus on the WAND.9.2.2 Check the temperature display on the upper left corner of the instrument. Make sure it isat room temperature.9.2.3 Double click the [WIN FLX] icon. The measurement program will start and prompt you toenter your own subdirectory name.9.2.4 If the computer has been rebooted, enter login Flexus and password FLX-2320 (case-sensitive). At the DOS prompt, enter win to start Windows. Then double click on the[WIN FLX] icon.Pre-deposition Measurement9.2.5 Open the instrument door. Place the wafer, face up, in the wafer locator ring on themeasurement platform. Change the locator ring if it is not the right size for your wafer.Close the instrument door securely.9.2.6 Choose [First (no Film)] from the Measure menu. The [First Measurement] dialog boxwill pop out. Enter the file name, for data to be stored, and all other fields. Change thesubstrate thickness to match your wafer. There is a micrometer on the shelf on top ofthe Flexus if you do not know the thickness of your wafer. Make sure the Processprogram is the one you want to use. Refer to Section 9.4 to edit the current program orload other program.9.2.7 Click the [Measure] button in the [First Measurement] dialog box. The firstmeasurement starts and you can hear some beeping sounds. When the measurementfinishes, the PC displays two more windows – substrate deflection and light intensity.If you plan to do more graphic operations, e.g. 3D contour graphs, you need to save thegraphs for future use by choosing [Save As] from the [File] menu. You do not have to doso if you only want to measure the stress in the film.9.2.8 Repeat the operation (Sections 9.2.4 to 9.2.6) for other wafers. You can store the data ofdifferent wafers in the same data file with different ID.9.2.9 When you finished measuring all your wafers, close all the window and exit the program.Disable Flexus on the WAND.Post-deposition Measurement9.2.10 Measure the thickness of the film deposited on your wafer. Make sure the backside film isstripped completely. Any residue left on the backside will affect your stress measurement9.2.11 Repeat Sections 9.2.1 to 9.2.4 to start the WINFLX program.9.2.12 Choose [Single] from the Measure menu. The [Single Stress] dialog box will pop out.Click the [File] button to select the data file, which contains the pre-depositionmeasurement. It is the one you entered in Section 9.2.5. Click the drop down button toselect the wafer ID, which must match the pre-deposition measurement ID for the wafer.Enter the thickness of the film deposited.If you have not measured the film thickness, you can enter an approximate one. You cancorrect the entry after you have measured it (Section 9.3).9.2.13 Click the [Measure] button in the [Single Measurement] dialog box. Similar to the firstmeasurement (Section 9.2.6), the measurement starts and you can hear some beepingsounds. When the measurement finishes, the PC displays two more windows – substratedeflection and light intensity.In addition, the measured wafer curvature and stress values are displayed on the graphs.Negative values indicate a convex surface and compressive stress. Positive valuesindicate a concave surface and tensile stress.If you plan to do more graphic operations, e.g. 3D graphs, you need to save the graphsfor future use by choosing [Save As] from the [File] menu. You do not have to do so ifyou only want to measure the stress in the film.9.2.14 Repeat the operation (Sections 9.2.9 to 9.2.12) for other wafers.9.2.15 When you finished measuring all your wafers, close all the windows and exit the program.Disable Flexus on the WAND.9.3 Editing, Printing, and Data Transfer of Measurement Results9.3.1 Perform Sections 9.2.1 to 9.2.4 to start the WINFLX program.9.3.2 From the Edit menu, choose [Data Files]. Select the data file from the dialog box.9.3.3 The selected data file will be displayed and you can change all its contents, e.g. filmthickness, and wafer thickness. elastic modulus, and etc. Do not change the Id field,since it may corrupt the link between the first and single measurements.9.3.4 The stress will be recalculated automatically after you make the change. If not, choose[Recalculate] from the Edit menu.9.3.5 To print the data file, choose [Print] from the File menu. Make sure the printer, which sitson top of the Flexus, is on and it has paper.9.3.6 To transfer data files through the network, first click on the [Program Manager] icon, andthen on the [File Manager] icon. Click on the C: drive, locate your personal directory andselect the files you want to transfer. The data files with extension .grp are text files withthe raw data and calculated stress measurement.9.3.7 Place a floppy disk in the 3.5” drive. Go to the [File] menu and click [Copy]. Enter A: inthe field for the destination drive and hit [OK]. Note: The M: drive is no longer availableas this computer is no longer connected to the network.9.4 Loading, Editing, And Saving Measuring Program9.4.1 Perform Sections 9.2.1 to 9.2.4 to start the WINFLX program9.4.2 From the Edit menu, choose [Process Programs]. The Process Program dialog box willpop-up, with the current program name displayed in the title bar.9.4.3 To load another program, choose the [Load] button. A list of available programs will bedisplayed. Select the desired program then click [OK].9.4.4 After loading the program, click [Cancel] in the Process Program dialog box to return tothe stress measurement window.9.4.5 You can customize a process program after you load it. The Process Program dialog boxhas the following fields that a user can modify. Use the default if you do not know what toenter.Field DescriptionMaximum Scan Points You can specify a maximum of 1250 points. But only 50points, which is the default, will be saved by the computer forfuture reference.Low Intensity Alarm Use default.Elastic Modulus The elastic modulus of the substrate. The drop-down list hasseveral for common substrates used in the semiconductorresearch.Substrate Thickness The thickness of the substrate.Wafer Diameter The diameter of the wafer in millimeters.Save Scan If set to NO, the scan data will not be saved.Auto Scan If set ON, the program scans from 10% to 90% of thesubstrate diameter. To define your own limits, set it to OFF.You will be prompted to enter the starting and ending scanpositions after the Wafer Type field is edited.Hole Diameter The diameter of the center region to be skipped (for hard orcompact disk applications)Units Select MPa or dynes/cm2.Wafer Type Select whether your wafer has Flat or Notch.Laser Selection There are two lasers in the system, 670nm and 750nm.Select Automatic allows the system to decide which laser touse.9.4.6 After you finish modifying a process program, click [Save]. Make sure you do notoverwrite other programs.10.0 Troubleshooting Guidelines10.1 Problem: The computer screen is blank.Cause: The Flexus is not enabled.Solution: Enable Flexus on the WAND.10.2 Problem: Cannot find the WIN FLX icon after enabling Flexus on the WAND.Cause: Previous user changed the WINDOWS displays.Solution: Select the [Windows] from the WINDOWS toolbar menu. Click the [Application].The WIN FLX icon is in the Application window.10.3 The computer displays a Low Laser Intensity alarm.Cause: The wafer to be measured is not reflective, i.e. dark film.Solution: No solution. The wafer cannot be measured.Cause: There are certain combinations of film thickness/refractive index that makes the reflected laser beams to be destructively interfered.Solution: Select laser of different wavelength in the process program.11.0 Figures & Schematics11.1 Tencor FLX-2320 (Front View)11.2 Locater Ring used with Three Hot Plate Pins12.0 AppendixTheory of OperationThe FLX-2320 measures the changes in the radius of curvature of a substrate caused by deposition ofa stress thin film. The stress in the thin film is calculated from the radius of curvature of the substrateusing the following equation:σ = [ E / ( 1 –ν ) ] [ h2 / 6 R t ]where:σ is the film stress (Pa)E/(1- ν) is the biaxial elastic modulus of the substrate (1.805E11Pa for 100 Si)h is the substrate thickness (m)t is the film thickness (m)R is the substrate radius of the curvature (m)January 2004 - J. Chang。

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