晟矽微MC5833D&BP2833D
微晟微电子 SG2800 系列高电压中等电流驱动器数组说明书
High Voltage Medium Current Driver ArraysSchematics (each Darlington pair)+VFigure 1 · Schematics (showing each Darlington pair)Features∙Eight NPN Darlington Pairs ∙Collector Currents to 600mA∙Output Voltages from 50V to 95V∙Internal Clamping Diodes for Inductive loads∙DTL, TTL, PMOS, or CMOS Compatible inputsHigh Reliability Features▪Available To MIL-STD-883 – 883, ¶ 1.2.1 ▪Available to DSCC– Standard Microcircuit Drawing (SMD) ▪MIL-M38510/14106BVA - SG2801J-JAN ▪MIL-M38510/14107BVA - SG2802J-JAN ▪MIL-M38510/14108BVA - SG2803J-JAN ▪MIL-M38510/14109BVA - SG2804J-JAN ▪MSC-AMS Level "S" Processing AvailableDescription The SG2800 seriesintegrates eight NPNDarlington pairs with internal suppression diodes to drive lamps, relays, and solenoids in many military,aerospace, and industrial applications that requiresevere environments. All units feature open collector outputs with greaterthan 50V breakdown voltages combined with 500mA current carrying capabilities. Five different input configurations provide optimized designs for interfacing with DTL, TTL, PMOS, orCMOS drive signals.These Darlington array are designed to operate from -55°C to 125°C ambient temperature in a 18-pin dual in-line ceramic (J) package and 20-pinleadless chip carrier (LCC). In addition a plastic version is available in 18 lead SOWB (DW) package with a reduced temperaturerange of 0°C to 70°C.SG2800 SeriesHigh Voltage Medium Current Mode PWM Controllerent Driver ArrayConnection Diagrams and Ordering InformationAbsolute Maximum Ratings1 Absolute Maximum Ratings1Thermal DataHigh Voltage Medium Current Mode PWM Controllerent Driver ArrayRecommended Operating Conditions1Selection GuideElectrical CharacteristicsElectrical Characteristics(Unless otherwise specified, these specifications apply over the operating ambient temperatures of -55°C ≤T A≤ 125°C, for the J & L devices and 0°C ≤ T A≤ 70°C, for the DW device. Low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal to the ambient temperature.) Table 1 · SG2801 thru SG2804High Voltage Medium Current Mode PWM Controllerent Driver ArrayTable 2 · SG2811 thru SG2815Electrical CharacteristicsTable 3 · SG2821 thru SG2824High Voltage Medium Current Mode PWM Controllerent Driver ArrayParameter Test FiguresParameter Test Figures(See figure numbers in Electrical Characteristics Tables 1 to 3)Figure 2a I CEX Test Circuit Figure 2b I CEX Test Circuit Figure 3h FE, V CE(sat) Test CircuitFigure 4I IN (ON) Test Circuit Figure 5I IN (OFF) Test CircuitFigure 6V IN(ON) Test CircuitFigure 7I R Test Circuit Figure 8V F Test CircuitHigh Voltage Medium Current Mode PWM Controllerent Driver ArrayCharacteristic Curves6005004003002001000 1.4 1.6 1.81.2.6 1.0.8.4.2Saturation Voltage - (V)C o l l e c t i o n C u r r e n t - (m A )Figure 8 · Output CharacteristicsInput Voltage - (V)O u t p u t C u r r e n t - (mA )4000100200300Figure 9 ·Output Current Vs. Input Voltage40030020010000100350Input Current - (µA)O u t p u t C u r r e n t - (m A )20025040030015050Figure 10 ·Output Current Vs. Input Current2.52.01.51.00.5001424Input Voltage - (V)I n p u t C u r r e n t - (m A )182026221612Figure 11 ·Input Characteristics - SG28022.52.01.51.00.500 2.07.0Input Voltage - (V)I n p u t C u r r e n t - (m A )4.05.08.06.03.010Figure 12 ·Input Characteristics - SG2803 2.52.01.51.00.50 6.011Input Voltage - (V)I n p u t C u r r e n t - (m A )8.09.012107.05.0Figure 13 · Input Characteristics - SG2804Characteristic Curves - ContinuedCharacteristic Curves - Continuedo0Percent Duty Cycle - (%)P e a k C o l l e c t o r C u r r e n t i n m A a t +70 C60040020040100806020Figure 14 · Peak Collector Current Vs. Duty CycleHigh Voltage Medium Current Mode PWM Controllerent Driver ArrayPackage Outline DimensionsControlling dimensions are in inches, metric equivalents are shown for general information.*Lead coplanarityNote:Dimensions do not include protrusions; these shall notexceed 0.155mm (.006”) on any side. Lead dimensionshall not include solder coverage.Figure 15 · DW Package DimensionsPackage Outline DimensionsPackage Outline DimensionsControlling dimensions are in inches, metric equivalents are shown for general information.Note:Dimensions do not include protrusions; these shall not exceed 0.155mm (.006”) on any side. Lead dimension shall not include solder coverage.Figure 16 · J 18-Pin Ceramic Dual Inline Package DimensionsNote:1. All exposed metalized area shall be gold plated 60 micro-inch minimum thickness over nickel plated unless otherwise specified in purchase order.Figure 17 · L 20-Pin Ceramic Leadless Chip Carrier (LCC) Package Outline DimensionsMicrosemi Corporate Headquarters One Enterprise, Aliso Viejo,CA 92656 USAWithin the USA: +1 (800) 713-4113 Outside the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136Fax: +1 (949) 215-4996E-mail: ***************************© 2014 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductorMicrosemi makes no warranty, representation, or guarantee regarding the information contained herein or the suitability of its products and services for any particular purpose, nor does Microsemi assume any liability whatsoever arising out of the application or use of any product or circuit. The products sold hereunder and any other products sold by Microsemi have been subject to limited testing and should not be used in conjunction with mission-critical equipment or applications. Any performance specifications are believed to be reliable but are not verified, and Buyer must conduct and complete all performance and other testing of the products, alone and together with, or installed in, any end-products. Buyer shall not rely on any data and performance specifications or parameters provided by Microsemi. It is the Buyer’s responsibility to independently determine suitability of any products and to test and verify the same. The information provided by Microsemi hereunder is provided “as is, where is” and with all faults, and the entire risk associated with such information is entirely with the Buyer. Microsemi does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other IP rights, whether with regard to such information itself or anything described by such information. Information provided in this document is proprietary to Microsemi, and Microsemi reserves the right to make any changes to the information in thisSG2800–1.7/11.14。
柿饼 M3 模块硬件手册说明书
柿饼M3模块硬件手册1.概要信息1.1产品简介柿饼M3是上海睿赛德电子科技有限公司基于柿饼UI开发的一款显示屏板卡，用于提供IoT、智能家居、消费电子等领域的屏幕开发解决方案。
作为柿饼派的升级版本，柿饼M3尺寸小巧，功能强悍，支持丰富的外设通讯接口，可外接传感器或其他主控单元，支持丰富的网络协议和音视频播放，此外，柿饼M3支持FOTA功能，便于远程维护升级。
1.2基本参数●主控：RT1806高性能32位处理器●内置SDRAM：32MB●板载Flash：16MB●支持RGB666接口，支持常见的480*272，800*480，1024*600分辨率●支持UART、SPI、SDIO、IIC通信接口●支持USB-HOST功能可接移动4G模块或U盘●支持音视频播放●支持硬件JPEG解码●支持丰富的网络协议（MQTT、HTTP、HTTPS、WebSocket、TCP）●搭配柿饼UI，界面开发便捷，控件丰富（支持多种常用控件、可支持自定义控件）支持小程序多APP应用●支持FOTA安全升级机制2.模块典型应用框图图示为模块典型应用框图，详细参考电路见参考原理图资料。
3.规格参数模块相关规格参数如下：主要参数最小值典型值最大值单位工作温度-202570℃储存温度-302580℃工作湿度10%60%90%RH供电电压 4.5 5.0 5.5V供电电流90100120mAI/O支持电压 3.0 3.3 3.6VCodec支持电压 2.5 3.8 3.1VUSB支持电压 3.0 3.3 3.6V通信电平 3.3V 静电防护(默认)2（接触）24（空气）KV推荐回流温度：4.尺寸与引脚定义4.1尺寸大小项目参数外形尺寸27mm(长)*27mm（宽）*3.5mm（高）焊盘中心间距 1.27mm焊盘距板边距离 2.7mm注：详细参数见封装资料。
4.2引脚定义图4.3默认引脚定义PIN引脚Symbol符号说明Remark备注1,2,49-64LCD_D22,LCD_D23,LCD_D2-LCD_D21RGB数据接口默认RGB666，详情见示意图3LCD_CLK LCD屏时钟线4LCD_DE LCD屏片选脚5LCD_HSYNC RGB帧同步信号6LCD_VSYNC RGB场同步信号7,8VCC_5V电源供电4.5V-5.5V9,10GND电源地11SDA IIC数据线12SCL IIC时钟线13SD_DETC SD卡使能接口14SPK_SHDN音频使能接口（低有效）15，16U2_RX,U2_TX UART2串口信号输出、输入该串口为控制台,默认参数为1152008N117PWM1LCD背光调节接口18PE5WiFi初始化引脚不使用WiFi功能时，可做通用IO使用19PE4WiFi复位引脚同上20TP_INT/PE3触摸IC初始化引脚不使用触摸功能时，可做通用IO使用21TP_RST/PE2触摸IC复位引脚同上22,23LCD_D0/U0_RX,LCD_D1/U0_TX LCD的D0,D1引脚该串口为预留串口，默认参数为1152008N124，25SDIO_D2,SDIO_D3SD卡的SDIO数据D2,D3引脚26SDIO_CMD SDIO的命令引脚27SDIO_CLK SDIO的时钟引脚28,29SDIO_D0,SDIO_D1SD卡的SDIO数据D0,D1引脚30SPI_MISO/PA3默认为WiFi的SPI引脚不使用WiFi功能时，可做通用IO或SPI使用31SPI_CLK/PA2同上32SPI_MOSI/PA1同上33SPI_CS0/PA0同上34,35USB_DM,USB_DP USB数据线36RESET CPU复位引脚37TV_OUT38,39TV_IN1,TV_IN040LRADC ADC-Key带ADC功能的按键，6位分辨率41FMINL42FMINR43LINEIN44MICIN45,46HPR,HPL音频右/左声道输出47,48HPCOM_FB,HPCOM免责声明上海睿赛德电子科技有限公司随附提供的文档资料旨在提供给您（本公司的客户）使用，仅限于且只能在本公司销售或提供服务的产品上使用。
IR公司_大功率MOS管选型
I DContinuous Drain Current(A)70°Micro3Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPartNumberPD Max.PowerDissipation (W)N-ChannelLogic LevelIRLML2402*912570.54200.25 1.20.95230H1IRLML2803912580.54300.251.20.93230P-ChannelLogic LevelIRLML6302*912590.54-200.6-0.62-4.8230H1IRLML5103912600.54-300.6-0.61-4.8230* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°Micro6Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPartNumberPD Max.PowerDissipation (W)N-ChannelLogic LevelIRLMS1902915401.7200.10 3.2 2.675H2IRLMS1503915081.7300.103.22.675P-ChannelLogic LevelIRLMS6702*914141.7-200.20-2.3-1.975H2IRLMS5703914131.7-300.20-2.3-1.975* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°Micro8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRF7601* 912611.820 0.035 5.7 4.6 70 H3IRF7603 912621.830 0.035 5.6 4.5 70Dual N-Channel Logic LevelIRF7501* 912651.220 0.135 2.4 1.9 100 H3IRF7503 912661.2530 0.135 2.4 1.9 100P-Channel Logic LevelIRF7604* 912631.8-20 0.09 -3.6 -2.9 70 H3IRF7606 912641.8-30 0.09 -3.6 -2.9 70Dual P-Channel Logic LevelIRF7504* 912671.25-20 0.27 -1.7 -1.4 100 H3IRF7506 912681.25-30 0.27 -1.7 -1.4 100Dual N- and P-Channel Logic LevelIRF7507* 912691.2520 0.1352.4 1.9 100 H3-20 0.27 -1.7 -1.4IRF7509 912701.2530 0.135 2.4 1.9 100-30 0.27 -1.7 -1.4* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRF7413913302.5300.011139.250H4IRF7413A 916132.5300.0135128.450IRF9410915622.5300.0375.850Dual N-ChannelIRF7311914352.0200.029 6.6 5.362.5H4IRF7313914802.0300.029 6.5 5.262.5IRF7333917002.0300.10 3.5 2.862.5917002.0300.050 4.9 3.962.5IRF9956915592.0300.103.52.862.5Dual P-ChannelIRF7314914352.0-200.058-5.3-4.362.5H4IRF7316915052.0-300.058-4.9-3.962.5IRF9953915602.0-300.25-2.3-1.862.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)RΘMax.ThermalResistance(°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)Dual N- and P-ChannelIRF7317 915682.020 0.029 6.6 5.3 62.5 H42.0-20 0.058 -5.3 -4.3 62.5IRF9952 915622.030 0.103.5 2.8 62.5915622.0-30 0.25 -2.3 -1.8 62.5IRF7319 916062.030 0.029 6.5 5.2 62.52.0-30 0.058 -4.9 -3.9 62.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRF7401912442.5200.0228.77.050H4IRF7201911002.5300.0307.0 5.650IRF7403912452.5300.0228.55.450Dual N-ChannelLogic LevelIRF7101908712.0200.10 3.5 2.362.5H4IRF7301912382.0200.050 5.2 4.162.5IRF7303912392.0300.050 4.9 3.962.5IRF7103910952.0500.1303.02.362.5P-ChannelLogic LevelIRF7204911032.5-200.060-5.3-4.250H4IRF7404912462.5-200.040-6.7-5.450IRF7205911042.5-300.070-4.6-3.750IRF7406912472.5-300.045-5.8-3.750IRF7416913562.5-300.02-10-7.150* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SO-8Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)Dual P-ChannelLogic LevelIRF7104910962.0-200.250-2.3-1.862.5H4IRF7304912402.0-200.090-4.3-3.462.5IRF7306912412.0-300.10-3.6-2.962.5Dual N- and P-Channe Logic LevelIRF7307912421.4200.050 4.3 3.490H4-200.090-3.6-2.9IRF7105910972.0250.1093.5 2.862.52-250.25-2.3-1.862IRF7309912432.0300.050 4.9 3.962.5-300.10-3.6-2.9* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)70°SOT-223Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFL4105913812.1550.045 3.7 3.060H6IRFL110908612.01000.54 1.50.9660IRFL4310913682.11000.20 1.6 1.360IRFL21090868 2.02001.50.960.660IRFL214908622.02502.00.790.560P-ChannelIRFL9110908642.0-1001.2-1.1-0.6960H6N-ChannelLogic LevelIRLL3303913792.1300.031 4.6 3.760H6IRLL014N 914992.1550.14 2.0 1.660IRLL2705913802.1550.043.83.060* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFR33039164257300.0313321 2.2H7IRFR024N9133638550.0751610 3.3IRFR41059130248550.0452516 2.7IRFR12059131869550.0273723 1.8IRFR11090524251000.54 4.3 2.75IRFR120N 91365391000.219.1 5.8 3.2IRFR391091364521000.11159.5 2.4IRFR2109052625200 1.5 2.6 1.75IRFR22090525422000.8 4.833IRFR21490703252502 2.2 1.45IRFR2249060042250 1.1 3.8 2.43IRFR3109059725400 3.6 1.7 1.15IRFR3209059842400 1.8 3.123IRFR42090599425003 2.4 1.53IRFRC2090637426004.421.33* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)P-ChannelIRFR55059161057-550.11-18-11 2.2H7IRFR53059140289-550.065-28-18 1.4IRFR90149065425-600.5-5.1-3.25IRFR90249065542-600.28-8.8-5.63IRFR91109051925-100 1.2-3.1-25IRFR91209052042-1000.6-5.6-3.63IRFR9120N 9150739-1000.48-6.5-4.1 3.2IRFR92109052125-2003-1.9-1.25IRFR92209052242-200 1.5-3.6-2.33IRFR92149165850-250 3.0-2.7-1.7 2.5IRFR93109166350-4007.0-1.8-1.12.5* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D-PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRLR27039133538300.0452214 3.3H7IRLR33039131657300.0313321 2.2IRLR31039133369300.0194629 1.8IRLR024N 9136338550.0651711 3.3IRLR27059131746550.042415 2.7IRLR29059133469550.0273623 1.8IRLR120N 91541391000.18511 6.9 3.2IRLR341091607521000.10159.52.4* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-ChannelIRFZ24NS 913554555 0.07 17 12 3.3 H10IRFZ34NS 913116855 0.04 29 20 2.2IRFZ44NS 9131511055 0.022 49 35 1.4IRFZ46NS 9130512055 0.020 53 37 1.3IRFZ48NS 9140814055 0.016 64 45 1.1IRF1010NS 913723.855 0.011 84 60 40IRF3205S 9130420055 0.008 110 80 0.75IRFZ44ES 9171411060 0.023 48 34 1.4IRF1010ES 9172017060 0.012 83 59 0.90IRF2807S 9151815075 0.013 71 50 1.0IRF520NS 9134047100 0.2 9.5 6.7 3.2IRF530NS 9135263100 0.11 15 11 2.4IRF540NS 91342110100 0.052 27 19 1.6IRF1310NS 91514120100 0.036 36 25 1.3IRF3710S 91310150100 0.028 46 33 1.0IRF3315S 9161794150 0.082 21 15 1.6IRF3415S 91509150150 0.042 37 26 1.0IRFBC20S 9.101450600 4.4 2.2 1.4 2.5IRFBC30S 9101574600 2.2 3.6 2.3 1.7IRFBC40S 91016130600 1.2 6.2 3.9 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemandNumberCase Outline KeyPart NumberP D Max.PowerDissipation (W)IRFBF20S 9166554900 8.0 1.7 1.1 2.3 H10P-ChannelIRF5305S 91386110-55 0.06 -31 -22 1.4 H10IRF4905S 914783.8-55 0.02 -74 -52 40IRF9520NS 9152247-100 0.48 -6.7 -4.8 3.2IRF9530NS 9152375-100 0.20 -14 -9.9 2.0IRF9540NS 9148394-100 0.117 -19 -13 1.6IRF5210S 91405150-100 0.06 -35 -25 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°D 2PakSurface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRL3302S 916925720 0.020 39 25 2.2 H10IRL3202S916756920 0.016 48 30 1.8IRL3102S 916918920 0.013 61 39 1.4IRL3402S 9169311020 0.01 85 54 1.1IRL3502S 9167614020 0.007 110 67 0.89IRL2703S 913604530 0.04 24 17 3.3IRL3303S 913236830 0.026 38 27 2.2IRL3103S 9133811030 0.014 64 45 1.4IRL2203NS 9136717030 0.007 116 82 0.90IRL3803S 9131920030 0.006 140 98 0.75IRLZ24NS 913584555 0.06 18 13 3.3IRLZ34NS 913086855 0.035 30 21 2.2IRLZ44NS 9134711055 0.022 47 33 1.4IRL3705NS 9150217055 0.01 89 63 0.90IRL2505S 9132620055 0.008 104 74 0.75IRLZ44S 9090615060 0.028 50 36 1.0IRL530NS 9134963100 0.1 15 11 2.4IRL2910S 91376150100 0.026 48 34 1.0* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-Pak D -PakSOT-227Micro6SOT-223Micro8 2 Illustrations not to scaleI DContinuous Drain Current(A)100°SOT-227Surface Mount PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous DrainCurrent 25°C(A)RΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelFully Isolated Low ChargeFA38SA50LC 916155005000.1338240.25H21FA57SA50LC916506255000.0857360.20* Indicates low VGS(th), which can operate at VGS = 2.7VMeasured at ambient for Micro3, Micro6, Micro8, SO-8, and SOT-223 package styles. All others measured at case.1Micro3SO-8D-PakD -PakSOT-227Micro6SOT-223Micro82 Illustrations not to scaleI DContinuous Drain Current(A)100°I-PakThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFU33039164257300.0313321 2.2H8IRFU024N 9133638550.0751610 3.3IRFU41059130248550.0452519 2.7IRFU12059131869550.0273723 1.8IRFU11090524251000.54 4.3 2.7 5.0IRFU120N 91365391000.219.1 5.8 3.2IRFU391091364521000.11159.5 2.4IRFU2109052625200 1.5 2.6 1.7 5.0IRFU22090525422000.80 4.8 3.0 3.0IRFU2149070325250 2.0 2.2 1.4 5.0IRFU2249060042250 1.1 3.8 2.4 3.0IRFU3109059725400 3.6 1.7 1.1 5.0IRFU3209059842400 1.8 3.1 2.0 3.0IRFU4209059942500 3.0 2.4 1.5 3.0IRFUC2090637426004.42.01.33.0I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°I-PakThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)P-ChannelIRFU55059161057-550.11-18-11 2.2H8IRFU53059140289-550.065-28-18 1.4IRFU90149065425-600.50-5.1-3.2 5.0IRFU90249065542-600.28-8.8-5.6 3.0IRFU91109051925-100 1.2-3.1-2.0 5.0IRFU91209052042-1000.60-5.6-3.6 3.0IRFU9120N 9150739-1000.48-6.5-4.1 3.2IRFU92109052125-200 3.0-1.9-1.2 5.0IRFU92209052242-200 1.5-3.6-2.3 3.0IRFU92149165850-2503.0-2.7-1.7 2.5IRFU93109166350-4007.0-1.8-1.12.5N-ChannelLogic LevelIRLU27039133538300.0452214 3.3H8IRLU33039131657300.0313321 2.2IRLU31039133369300.0194629 1.8IRLU024N 9136338550.0651711 3.3IRLU27059131746550.04241715IRLU29059133469550.0273623 1.8IRLU120N 91541391000.18511 6.9 3.2IRLU341091607521000.10159.52.4I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°HEXDIPThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFD014907001.3600.2 1.7 1.2120H9IRFD024906991.3600.1 2.5 1.8120IRFD110903281.31000.54 1.00.71120IRFD120903851.31000.27 1.30.94120IRFD210903861.3200 1.50.60.38120IRFD220904171.32000.80.80.50120IRFD214912711.3250 2.00.570.32120IRFD224912721.3250 1.10.760.43120IRFD310912251.3400 3.60.420.23120IRFD320912261.3400 1.80.600.33120IRFD420912271.3500 3.00.460.26120IRFDC20912281.36004.40.320.21120I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-220Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C (A)R ΘMax.Thermal Resistance(°C/W)1Faxon Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)N-ChannelLow ChargeIRF737LC91314743000.75 6.1** 1.7 3.9H11IRF740LC 910681254000.5510** 1.039IRF840LC 910691255000.858.0** 1.039IRFBC40LC910701256001.26.2**1.039I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFZ24N 9135445550.071712 3.3H12IRFZ34N9127656550.042618 2.7IRFZ44N 9130383550.0244129 1.8IRFZ46N 9127788550.024633 1.7IRFZ48N 9140694550.0165337 1.6IRF1010N 91278130550.0127251 1.2IRF320591279150550.0089869 1.0IRFZ34E 9167268600.0422820 2.2IRFZ44E 91671110600.0234834 1.4IRF1010E 91670170600.01281570.90IRF280791517150750.0137150 1.0IRF520N 91339471000.209.5 6.79.5IRF530N 91351601000.111511 2.4IRF540N 91341941000.0522719 1.6IRF1310N 916111201000.0363625 1.3IRF3710913091501000.0284633 1.0IRF331591623941500.0822115 1.6IRF3415914771501500.0423726 1.0IRFBC209062350600 4.4 2.2 1.4 2.5IRFBC309048274600 2.2 3.6 2.3 1.7IRFBC4090506125600 1.2 6.2 3.9 1.0IRFBE2090610548006.51.81.22.3I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)IRFBE3090613125800 3.0 4.1 2.6 2.0H12IRFBF3090616125900 3.7 3.6 2.3 1.0IRFBG209060454100011 1.40.86 2.3IRFBG309062012510005.03.12.01.0P-ChannelIRF9Z24N 9148445-550.175-12-8.53.3H12IRF9Z34N 9148556-550.10-17-12 2.7IRF530591385110-550.06-31-22 1.4IRF490591280150-550.02-64-45 1.0IRF9530N 9148275-1000.20-13-9.2 2.0IRF9540N 9143794-1000.117-19-13 1.6IRF521091434150-1000.06-35-25 1.0IRF62159147983-1500.29-11-7.81.8I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220ABThrough-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart NumberP D Max.PowerDissipation (W)N-Channel Logic LevelIRL3302 916965720 0.020 39 25 2.2 H12IRL3202 916956920 0.016 48 30 1.8IRL3102 916948920 0.013 61 39 1.4IRL3402 9169711020 0.01 85 54 1.1IRL3502 9169814020 0.007 110 67 0.89IRL2703 913594530 0.04 24 17 3.3IRL3303 913225630 0.026 34 24 2.7IRL3103 913378330 0.014 56 40 1.8IRL2203N 9136613030 0.007 100 71 1.230 0.007 61 43 3.2IRL3803 9130115030 0.006 120 83 1.0IRLZ24N 913574555 0.06 18 13 3.3IRLZ34N 913075655 0.035 27 19 2.7IRLZ44N 913468355 0.022 41 29 1.8IRL3705N 9137013055 0.01 77 54 1.2IRL2505 9132520055 0.008 104 74 0.75IRL520N 9149447100 0.18 10 7.1 3.2IRL530N 9134863100 0.10 15 11 2.4IRL540N 9149594100 0.044 30 21 1.6IRL2910 91375150100 0.026 48 34 1.0I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-220 FullPak (Fully Isolated)Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous DrainCurrent 25°C(A)R ΘMax.Thermal Resistance (°C/W)1Fax on Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)N-ChannelLow ChargeIRFI740GLC91209404000.55 6.0** 3.139H13IRFI840GLC 91208405000.85 4.8** 3.139IRFIBC40GLC91211406001.24.0**3.139I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelIRFIZ24N 9150126550.07139.2 5.8H14IRFIZ34N9148931550.041913 4.8IRFIZ44N 9140338550.02428200.024IRFIZ46N 9130640550.023122 3.8IRFIZ48N 9140742550.0163625 3.6IRFI1010N 9137347550.0124431 3.2IRFI32059137448550.0085640 3.1IRFIZ24E 9167329600.071149.6 5.2IRFIZ34E 9167437600.0422115 4.1IRFI510G 90829271000.54 4.5 3.2 5.5IRFI520N 91362271000.207.2 5.1 5.5IRFI530N 91353331000.11117.8 4.5IRFI540N 91361421000.0521813 3.6IRFI1310N 91611451000.0362216 3.3IRFI371091387481000.0252820 3.1IRFI620G 90832302000.8 4.1 2.6 4.1IRFI630G 90652322000.4 5.9 3.7 3.6IRFI640G 90649402000.189.8 6.2 3.1IRFI614G 9083123250 2.0 2.1 1.3 5.5IRFI624G 9083330250 1.1 3.4 2.2 4.1IRFI634G 90738322500.45 5.6 3.5 3.6IRFI644G 90739402500.287.953.1I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)IRFI720G 9083430400 1.8 2.6 1.7 4.1H14IRFI730G 9065032400 1.0 3.7 2.3 3.6IRFI740G 90651404000.55 5.4 3.4 3.1IRFI734G 9100135450 1.2 3.4 2.1 3.6IRFI744G 91002404500.63 4.9 3.1 3.1IRFI820G 9064130500 3.0 2.1 1.3 4.1IRFI830G 9064632500 1.5 3.12 3.6IRFI840G 90642405000.85 4.6 2.9 3.1IRFIBC20G 90850306004.41.71.1 4.1IRFIBC30G 90851356002.2 2.5 1.63.6IRFIBC40G 9085240600 1.2 3.5 2.2 3.1IRFIBE20G 9085330800 6.5 1.4.86 4.1IRFIBE30G 9085435800 3.0 2.1 1.4 3.6IRFIBF20G 90855309008.0 1.2.79 4.1IRFIBF30G90856359003.71.91.23.6P-ChannelIRFI9Z24N 9152929-550.175-9.5-6.7 5.2H14IRFI9Z34N 9153037-550.10-14-10 4.1IRFI49059152663-550.02-41-29 2.4IRFI9540G 9083742-1000.117-13-9.2 3.6IRFI9540N 9148742-1000.117-13-9.2 3.6IRFI52109140448-1000.06-20-14 3.1IRFI9634G 9148835-2501.0-4.1-2.63.6I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI DContinuous Drain Current(A)100°TO-220 FullPak (Fully Isolated)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C(A)R ΘMax.Thermal Resistance (°C/W)1FaxonDemand Number Case Outline KeyPart Number P D Max.PowerDissipation (W)N-ChannelLogic LevelIRLI2203N 9137847300.0076143 3.2H14IRLI38039132048300.0066747 3.1IRLIZ24N 9134426550.06149.9 5.8IRLIZ34N 9132931550.0352014 4.8IRLIZ44N 9149838550.0222820 4.0IRLI3705N 9136947550.014733 3.2IRLI25059132763550.00858412.4IRLI520N 91496271000.187.7 5.4 5.5IRLI530N 91350331000.10117.8 4.5IRLI540N 91497421000.04420143.6IRLI291091384481000.02627193.1P-ChannelLogic LevelIRFI9520G 9083537-1000.6-5.2-3.6 4.1H14IRFI9530G 9083638-1000.03-7.7-5.4 3.6IRFI9620G 9087430-200 1.5-3.0-1.9 4.1IRFI9630G 9083840-2000.8-4.3-2.7 3.6IRFI9640G9083940-2000.5-6.1-3.93.1I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not ratedI D Continuous Drain Current (A)100°TO-247Qg TotalGate Charge(nC)Through-Hole PackagesV (BR)DSSDrain-to-Source Breakdown Voltage (V)R DS(on)On-State Resistance ()ΩI D Continuous Drain Current 25°C (A)R ΘMax.Thermal Resistance (°C/W)1Fax on Demand Number Case OutlineKeyPart Number P D Max.Power Dissipation (W)1N-ChannelLow ChargeIRFP350LC912291904000.3018**0.6570H16IRFP360LC 912302804000.2023**0.4598IRFP450LC 912311905000.4016**0.6570IRFP460LC 912322805000.2720**0.4598IRFPC50LC 912331906000.6013**0.6570IRFPC60LC912342806000.4016**0.4598I-PakTO-220 FullPakTO-262TO-247HEXDIPTO-220AB Illustrations not to scale** Not rated。
MC5832D_CN_DS_REV 0.1
MC5832D 用户手册V0.1非隔离降压型LED驱动芯片2014/3/20上海晟矽微电子股份有限公司Shanghai SinoMCU Microelectronics Co., Ltd.概述MC5832D是一款高精度的非隔离降压型LED控制器，适用于85V～265V全电压范围的小功率非隔离降压型LED照明应用MC5832D内置了高精度的采样、补偿电路，使得电路能够达到±3%以内的恒流精度，并且能够实现输出电流对电感与输出电压的自适应，输出电流不会应为电感量变化而变化，从而取得优异的线性调整率和负载调整率MC5832D内部集成了500V功率MOSFET，无需次级反馈电路，也无需补偿电路，加之精准稳定的自适应技术，使得系统外围结构十分简单，可在外围器件数量少，参数范围宽松的条件下实现高精度恒流控制，极大地节约了系统成本和体积，并且能够确保在批量生产时LED灯具参数的一致性MC5832D具有丰富的保护功能：输出开路保护、输出短路保护，电流采样电阻开短路保护、输入欠压保护、输出过压保护、芯片过温自适应调节等MC5832D 采用DIP-8封装典型应用特性·内部集成500V功率管·±5%以内的系统恒流精度·芯片超低工作电流·无需辅助供电电路·电感电流临界连续模式·宽输入电压·输出短路保护·采样电阻开短路保护·输出过压保护·欠压保护·过温自适应调节功能图1 MC5832D典型应用图引脚图极限参数电气特性内部框图启动对V DD 400mV 边峰值电流进行比较计算，通过采样电阻的调节来实现LED 驱动电流的大小：mA R I ISENLED 2400=；其中：I LED 是LED 的驱动电流，R ISEN 是采样电阻 。
由上可知，电感可计算为：FI V V V V L P IN LED IN LED ⨯⨯-⨯=)(；其中F 为系统工作频率，在设计系统时，首先确定ILED ，ILED 确定后RISEN 、IP 等也就相应确定了，此时由上式可知，系统频率与输入电压成正比、与选择之电感L 成反比：当输入电压最低（或）电感取值较大时，系统频率较低，当输入电压最高（或）电感取值较小时，系统频率较高，因此，在系统输入电压范围确定时，电感的取值直接影响到系统频可得出其中，R ISEN ISEN功耗很低，同时不断监测系统，若负载恢复正常， 则电路也将恢复正常工作。
部分电视机CPU型号及简单代换
部分电视机CPU型号及简单代换部分电视机CPU型号及简单代换8879CPBNG6V38 海信CPU8873CPBNG6U73 创维CPUTOSHIBA-HAY-22、8873CSCNG6PR6 通用CPUTDA9373PS/N2/AI1115 SVA CPU13-TB73-TM1V001、LC863332A-5T25、LC863332A-5S97 夏华CPU88CS38N-3P48、TMP88PS38 夏华K2918、K2926，解码TB1251TDA9381PS/N3/2/1741 索尼CPUTDA9381PS/N2/3I0837 LG CPUTDA9381PS/N2/3I0975 三星CPUTDA9373PS/N2/AI0939（Haier9373-V2.0）Haier9373-V1.0 海尔CPU V1.0的可以换空白存储器，按遥控器数字8、V+ 进总线LC863324B-54M2、LC863324A-5W21、LC863324C-55M5 海信CPUOM8370-A-3NC、NOM8370-A-1NC 海信、西湖、夏华、彩星CP-2156TCL-M18V3PNICAN、TCL-M11V1P 王牌CPUH13V02-T0、8829CSNG5CJ2、H13V01-T0 TCL CPUTDA9370PS/N2/AI1429（4706-D93705-64）3P36、4P36 创维CPU 4706-D83702-64CH05T1501 长虹CHD2590M37210M3-551SP日立25M8C CPUTDA9373PS/N2/AI0911（A01V01-PH）TDA9373PS/N2/AI0996 TCL 2990UHD0401、S3F880AXZZ 创维（3S30/5S30/5S31）MN152811TJS 松下CPU 85元LC863524C-55L7、53P4、52Y7、TH-50J2 杂牌CPULC863524C-55L6、55Y5、55K8 杂牌CPU87CK38N-3647（TMP87CK38N-3675、1C48）澳柯玛、松王M37221M6-309S 厦华R2920 CPUTDA9380PS/N1/IS0380（TCL-UOC-V01）王牌CPU，用TDA9383PS代替要把60脚接地13-T00S23-03M01、8879CSBNG6K02 乐华25G6BCH08T2602（8873CSANG6JH8）长虹CPUOM8373PS/N3/2/1870（4706-D83732-64）创维短管机专用CPULC863328A-51J8 嘉华CPU8803CPAN-3PE8（8823CPNG4JR6）换存储器、39脚，C205换1UF，ST6378B1/FKF 4S02-3008 创维数码3008TMP47C434N-3526 通用王牌TCL M14VBC 王牌CPUST6367BB1/BFX 不详LC863324A-5N09 海信CPULC864512V-5C77 海信CPUM34300N4-565SPKY88C94 夏华CPUM34300N4-555SP 日立CPULC863328A-5S15 高路华、海信CPUMC8902A-5Y83 熊猫、高路华CPUMC8904A-5Z25 熊猫、高路华、海信、西湖CPUM37210M3-807SP 康力CPUT-P-16 8823CPNG5RH6 熊猫CPU SAA5647HL/M1 飞利蒲CPUOM8373PS/N3/A/1914（OM8373PS/N3/A/1854）康佳短管CPUTMP47C634AN RC18 厦华CPUHAIER1132S、HAIER1532S 海尔21T8D-S、21F9G-Shisense 8803-1（8803CPBNG3VG6）8823CPNG3PE8 海信TC2111A 换存储器、39脚，C205换1UF，OM8370PS/N3/1（HZ10V01）（TOUL 12-02M00）TCL CPUHAIER8829-V2.0（8829CPNG4PG3）海尔CPUCH0504、CH0503 长虹CPUM34302M8-612SP SONY CPUCH04T1306 长虹CPUNOM8370-A-11B 西湖CPUTCL-T00Y12-02M01（LA76931）、TOOY12-01M01 TCL CPUCKP1302S1（8829CPNG6FP6）CKP1302S 康佳CPUP88P8432N、S3C8849X13-AQB7 嘉华CPU OM8373-B-3NC 海信TF2507FLC863328C-55N6、5T45 康佳CPUTDA9373PS/N2/AI0889、4706-D93731-64 5P30 创维CPULC863328B-53P5、LC863328C-56M9、LC863328B-52E4、50J1 SVA CPUR2J10160G8-A12FP、R2J1016008-A06FP 数源S21A07 等13-TOOS13-08M01、8873CSBNG6N15 TCL CPU8873CPANG6HV9 数源TJ21A23 CPU87CM38N-1K45、87CM38N-1U87 夏华XT-259ATAVC139 三洋CPULC863320A-5N94、LC863320A-5N17（3Y01）创维CPUCH05T1604（TDA9370PS/N2/AI0848）长虹超级芯片CH05T1607（TDA9370PS/N2/AI1092）TDA9370PS 长虹超级芯片CH05T1606（TDA9373PS/N2/AI1087）TDA9373PS 长虹超级芯片CH05T1630、OM8373PS/N3/A/1842（CH05T1621）长虹，按键功能错乱，伴音失控。
松下微波炉维修手册(K583_K573_S563_S553)概要
O O O O中英文表示
O
O
O
O
3原理图(NN-K583JF/MF,NN-K573JF/MF
4原理图(NN-S563JF,NN-S553MF
5操作顺序说明
5.1.
可变功率烹调控制
变频器(U由数据程序电路发出的信号控制输出功率,继电器1(RY1停留于开,但却由变频器发出的信号控制其输出功率。
1.零部件检修或更换之后,应确认炉子各部位的螺丝不松动或没有丢失,如果螺丝没有拧紧,有可能发生微波泄漏情况。
2.把电源插头插入插座之前,应确认所有的电子部件连接牢固。
注意
接近磁控管和对此进行更换时,维修人员应取下手表。
变频器的高压及高温(热力/电力引致的危险。
变频器电路上提供极高压和高电流量给磁控管。尽管,在常规使用中并无危害,但进行维修时务请加倍小心。虽然看似电视的变压器,但电流量极大,其高电流量及高电压亦存在危险。铝制散热器亦存在高压(高热。故当电源插头接上电源时,切勿触摸,因为其中一个IGBT电源装置是与铝制散热器直接连接上,铝制散热器会因热能引致高温;因此,在维修及更换零件时必须加倍注意。
5.将门E轻轻往上提,使门E从腔体铰链上脱出。
更换不良的炉门组成零件以后,在重新进行组装时,请按下列要求正确安装和调整,以防止微波的过度泄漏。
注:无需用力压,门A上部也应紧紧靠住腔体前板。7.6.转盘电机
1.用钳子在下图箭头所示的部位切出8个小孔。
2.从转盘电机上拆除2根导线。
3.旋除固定转盘电机的1颗螺丝。
2.当显示窗上的烹调时间一到,数据程序电路即发出一个控制信号,使微波炉自动关机。
注:当自动再加热结束后,风扇仍将工作1分钟以便冷却炉体和电子元件。
MC32F7343用户手册_V1.0
SinoMCU 8位单片机MC32F7343用户手册V1.0上海晟矽微电子股份有限公司Shanghai SinoMCU Microelectronics Co., Ltd.目录1 产品概要 (4)1.1 产品特性 (4)1.2 订购信息 (5)1.3 引脚排列 (6)1.4 端口说明 (7)2 电气特性 (8)2.1 极限参数 (8)2.2 直流电气特性 (8)2.3 ADC特性参数 (9)2.4 EEPROM特性参数 (9)2.5 交流电气特性 (10)3 CPU及存储器 (11)3.1 指令集 (11)3.2 程序存储器 (13)3.3 数据存储器 (14)3.4 堆栈 (15)3.5 控制寄存器 (15)3.6 用户配置字 (19)4 系统时钟 (20)4.1 内置高频RC振荡器 (20)4.2 内置低频RC振荡器 (20)4.3 工作模式 (21)4.4 低功耗模式 (22)5 复位 (23)5.1 复位条件 (23)5.2 上电复位 (23)5.3 外部复位 (24)5.4 低电压复位 (24)5.5 看门狗复位 (24)6 I/O端口 (25)6.1 I/O工作模式 (25)6.2 上/下拉电阻控制 (26)6.3 端口模式控制 (27)7 定时器TIMER (29)7.1 看门狗定时器WDT (29)7.2 定时器T0 (29)7.3 定时器T1 (31)7.4 定时器T2 (34)7.5 定时器T3 (36)8 模数转换器ADC (39)8.1 ADC概述 (39)8.2 ADC操作步骤 (39)8.3 ADC相关寄存器 (40)8.4 ADC零点偏移修调流程 (43)9 IIC通讯接口 (44)9.1 数据传输 (44)9.2 IIC相关寄存器 (45)9.3 应用流程说明 (47)10 增强型异步通讯EUART (49)10.1 概述 (49)10.2 工作方式 (49)10.3 波特率 (54)10.4 多机通讯 (54)10.5 帧出错检测 (56)10.6 EUART相关寄存器 (56)11 EEPROM (59)11.1 EEPROM概述 (59)11.2 EEPROM相关寄存器 (59)11.3 EEPROM操作示例 (60)12 中断 (61)12.1 外部中断 (61)12.2 定时器中断 (61)12.3 ADC中断 (61)12.4 键盘中断 (61)12.5 IIC通讯中断 (62)12.6 UART通讯中断 (62)12.7 中断相关寄存器 (62)13 特性曲线 (66)13.1 I/O特性 (66)13.2 功耗特性 (69)13.3 模拟电路特性 (71)14 封装尺寸 (74)14.1 SOP24 (74)14.2 SOP20 (74)14.3 SOP16 (75)14.4 TSSOP20 (75)15 修订记录 (76)1产品概要1.1产品特性⏹8位CPU内核✧精简指令集，8级深度硬件堆栈✧CPU双时钟，可在系统高/低频时钟之间切换✧高频时钟下F CPU可配置为2T/4T/8T/16T/32T/64T/128T/256T，低频时钟下F CPU固定为2T⏹程序存储器✧8K×16位FLASH型程序存储器✧可通过间接寻址读取程序存储器内容✧支持在线烧录，烧录次数至少1000次⏹数据存储器✧384字节SRAM通用数据存储器，支持直接寻址、间接寻址等多种寻址方式✧64字节EEPROM型数据存储器，擦写次数至少10000次⏹3组共22个I/O✧P0（P00~P07），P1（P10~P17），P2（P20~P25）✧P01/P02复用成SDA/SCL时为开漏输出✧P1、P2为大电流端口；P1可复用为键盘中断输入✧所有端口均内置上/下拉电阻，均可单独使能/禁用⏹时钟系统✧内置高频RC振荡器（16MHz），可用作系统高频时钟源✧内置低频RC振荡器（32KHz），可用作系统低频时钟源⏹多种系统工作模式✧高速运行模式：CPU在高频时钟下运行✧低速运行模式：CPU在低频时钟下运行✧HOLD模式1：CPU停止运行，高频时钟源工作✧HOLD模式2：CPU停止运行，高频时钟源停止工作，低频时钟源工作✧休眠模式：CPU停止运行，所有时钟源停止工作⏹内部自振式看门狗计数器（WDT）✧溢出时间可配置：64ms/2048ms✧工作模式可配置：始终开启、始终关闭、低功耗模式下关闭⏹4个定时器✧8位定时器T0，可实现外部计数、BUZ功能、PWM功能✧16位定时器T1，可实现外部计数、16位PWM功能✧16位定时器T2，可作为UART的波特率发生器✧8位定时器T3⏹1个12位高精度ADC✧14路外部通道：AN0~AN13；2路内部通道：GND、VDD/4✧参考电压可选：VDD、内部参考电压VIR（2V）✧ADC时钟：F HIRC的8/16/32/64分频✧支持零点校准⏹内置IIC通讯模块✧支持单主机模式✧支持7位地址编码✧通讯速率可选100Kbps、400Kbps、800Kbps、1Mbps（实际速率受芯片及外围电路影响）⏹增强型UART✧波特率可选择为系统时钟分频或者定时器溢出✧增强功能包括帧出错检测及自动地址识别✧支持8位同步半双工、8位/9位异步全双工等4种工作方式⏹中断✧外部中断（INT0~INT3）：INT0~INT1可选三种触发方式，INT2~INT3为下降沿触发✧定时器中断（T0~T3）：溢出产生中断✧ADC中断✧键盘中断：8路端口共用1个中断源，并可分别使能或屏蔽✧IIC通讯中断✧UART通讯中断⏹上电复位POR：1.6V⏹低电压复位LVR：2.0V/2.4V/2.8V/3.6V⏹工作电压✧V LVR28 ~ 5.5V @ Fcpu = 8MHz（F HIRC/2）✧V LVR24 ~ 5.5V @ Fcpu = 4MHz（F HIRC/4）✧V LVR24 ~ 5.5V @ Fcpu = 2MHz（F HIRC/8）✧V LVR20 ~ 5.5V @ Fcpu = 1MHz（F HIRC/16）⏹封装形式✧SOP24/SOP20/TSSOP20/SOP161.2订购信息产品名称 封装形式 备注MC32F7343A0N SOP24MC32F7343A0M SOP20MC32F7343A0K SOP16MC32F7343A0Y TSSOP201.3引脚排列MC32F7343A0N131415166543232291087211718192012112124[PDO]/AN13/INT3/P03RST/P05[PCK]/P25P07P06BUZ0/PWM0/P04[PDT]/P24GND SCL/AN12/P02SDA/AN11/P01AN10/INT0/P00P23P11/K1/AN3/TXD P10/K0/AN2/RXD P20/INT1/AN1P14/K4/AN6/PWM1P13/K3/AN5/TC0P12/K2/AN4P17/K7/AN9/TC1P16/K6/AN8P15/K5/AN7P21/INT2/AN0P22VDDMC32F7343A0M/A0Y1314151665431211910872117181920[PDO]/AN13/INT3/P03RST/P05[PCK]/P25TC1/AN9/K7/P17BUZ0/PWM0/P04[PDT]/P24GNDSCL/AN12/P02SDA/AN11/P01AN10/INT0/P00P11/K1/AN3/TXD P10/K0/AN2/RXD P20/INT1/AN1P14/K4/AN6/PWM1P13/K3/AN5/TC0P12/K2/AN4P16/K6/AN8P15/K5/AN7P21/INT2/AN0VDDMC32F7343A0K1.4端口说明端口名称 类型 功能说明VDD P 电源GND P 地P0，P1，P2 D GPIO，内部上/下拉INT0~INT3 DI 外部中断输入K0~K7 DI 键盘中断输入TC0~TC1 DI 定时器T0~T1的外部计数输入PWM0/BUZ0 DO 定时器T0的PWM/BUZ输出PWM1 DO 定时器T1的PWM输出AN0~AN13 AI ADC输入通道SCL，SDA D IIC通讯时钟/数据端口，开漏输出RXD，TXD D UART通讯接收/发送端口RST DI 外部复位输入PCK，PDT，PDO D 编程时钟/数据端口，开漏输出注：P-电源，D-数字输入输出，DI-数字输入，DO-数字输出，A-模拟输入输出，AI-模拟输入，AO-模拟输出。
高速低压差LDO
V
4
0
0.35
V
4
10
V
50
70
mA
第 2 页 共 12 页
MD53RXX 系列（MD53R18，输出电压+1.8V）
项目
记号
条件
输出电压 输出电流*1 输入输出电压差
输入稳定度
负载稳定度
抗纹波率
输出电压温度系数
电流消耗
静态电流
CE 上拉电流 CE 输入高电平 CE 输入低电平
输入电压 输出短路电流
输入电压 输出短路电流
VOUT IOUT Vdrop
△VOUT1 △VIN·VOUT
△VOUT2
PSRR
△VOUT △Ta·VOUT
ISS
ISS1
ICEH VCEH
VIN= 4.3V，IOUT=50mA VIN= 4.3V
IOUT=10 mA IOUT=200 mA 4.3V≤VIN≤10V
IOUT=1mA VIN=4.3V 1.0mA≤IOUT≤200mA VIN=VOUT(S)+1V+1Vp_p f = 1KC Iout=50mA VIN=4.3V，IOUT=10mA -40℃≤Ta≤85℃ VIN= VOUT(S)+2V
无负载
VIN=10V CE=GND 无负载
VIN=VCE=Vout+1V
VIN
--
Ilim
Vout=0V
（除特殊注明以外：Ta=25℃）
最小 典型 最大 单位 测定
值
值
值
电路
2.744 2.8 2.856
V
1
450
mA
3
12
18
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非隔离降压型 LED 驱动芯片 2014/3/20
上海晟矽微电子股份有限公司
Shanghai SinoMCU Microelectronics Co., Ltd.
概述
深圳市惠新晨电子有限公司
MC5833D
非隔离降压型 LED 恒流驱动芯片
MC5833D 是一款高精度的非隔离降压型 LED 控制器， 适用于 85V～265V 全电压范围的小功率非隔离降压 型 LED 照明应用 MC5833D 内置了高精度的采样、补偿电路，使得电 路能够达到±3%以内的恒流精度，并且能够实现输 出电流对电感与输出电压的自适应，输出电流不会 应为电感量变化而变化，从而取得优异的线性调整 率和负载调整率 MC5833D 内部集成了 500V 功率 MOSFET， 无需次级反 馈电路，也无需补偿电路，加之精准稳定的自适应 技术，使得系统外围结构十分简单，可在外围器件 数量少，参数范围宽松的条件下实现高精度恒流控 制，极大地节约了系统成本和体积，并且能够确保 在批量生产时 LED 灯具参数的一致性 MC5833D 具有丰富的保护功能：输出开路保护、输 出短路保护，电流采样电阻开短路保护、输入欠压 保护、输出过压保护、芯片过温自适应调节等 MC5833D 采用 DIP-8 封装
PCB 设计
在设计 MC5833D PCB 时，需要遵循以下指南：
开路过压保护电阻设置
在系统中，当LED开路时，由于无负载连接，输出电 压会逐渐上升，进而导致退磁时间也会逐渐变短， 因此通过RADJ外接电阻来控制相应的退磁时间，就 能得到需要的开路保护电压。根据内部电路计算， 可得出RADJ与VOVP的关系公式：
特性
· · · · · · · · · · · 内部集成 500V 功率管 ±5%以内的系统恒流精度 芯片超低工作电流 无需辅助供电电路 电感电流临界连续模式 宽输入电压 输出短路保护 采样电阻开短路保护 输出过压保护 欠压保护 过温自适应调节功能
典型应用
图1
MC5833D 典型应用图
上海晟矽微电子股份有限公司
最大退磁时间 最小退磁时间 过热温度调节点
TOFF_MAX TOFF_MIN TREG
255 5 155
us us ℃
注 4：典型参数值为 25.C 下测得的参数标准。 注 5：规格书的最小、最大规范范围由测试保证，典型值由设计、测试或统计分析保证。
内部框图
上海晟矽微电子股份有限公司
page 5 of 8
深圳市惠新晨电子有限公司
MC5833D
非隔离降压型 LED 恒流驱动芯片
图 3 芯片内部框图
功能说明
MC5833D 是一款专用于 LED 照明的恒流驱动芯片， 芯片内部集成 500V 高压 MOSFET，工作在 CRM 模式， 适合全电压范围工作，具有良好的线性调整率、负 载调整率以及优异的恒流特性，只需很少的外围元 器件就能实现，低成本高效率的 LED 恒流控制器。
定购信息
定购型号 封装 温度范围 包装形式 管脚 50 颗/管 打印 MC5833D XXXXY WXYY
MC5833D
DIP-8
-40 ℃到 105 ℃
上海晟矽微电子股份有限公司
page 3 of 8
深圳市惠新晨电子有限公司
MC5833D
非隔离降压型 LED 恒流驱动芯片
极限参数
项目 电源电压 漏极电压 电流采样端电压 最大工作电流 开路保护电压调节端 功耗 结热阻 工作结温范围 存储温度范围 ESD 符号 VDD VDRN VISEN IDDMAX VRADJ PMAX θJA TJ TSTG 参数范围 -0.3～20 -0.3～500 -0.3～6 5 -0.3～6 450 145 -40～155 -55～160 2000 单位 V V V mA V mW ℃/W ℃ ℃ V
其中，VISEN 是 ISEN 关断阈值（400mV） ；L 是电感量； RISEN 是采样电阻；VOVP 是需要设定的过压保护点 ；
保护功能
MC5833D 设定了多种保护功能，如 LED 开短路保护、 ISEN 电阻开短路保护、VDD 过压/欠压、电路过温自 适应调节等。 MC5833D 在工作时，自动监测着各种工作状态，如 果负载开路时，则电路将立刻进入过压保护状态， 关断内部 MOS 管，同时进入间隔检测状态，当故障 恢复后，电路也将自动回复到正常工作状态。 若负载短路，系统将工作在 5KHz 左右的低频状态， 功耗很低，同时不断监测系统，若负载恢复正常， 则电路也将恢复正常工作。 若当 ISEN 电阻短路，或者电感饱和等其他故障发 生，电路内部快速保护机制也将立即停止 MOS 的开
注 1：最大极限值是指超出该工作范围，芯片有可能损坏。推荐工作范围是指在该范围内，器件功能正常，但并不完全保证 满足个别性能指标。电气参数定义了器件在工作范围内并且在保证特定性能指标的测试条件下的直流和交流电参数规范。对 于未给定上下限值的参数，该规范不予保证其精度，但其典型值合理反映了器件性能。 注 2： 温度升高最大功耗一定会减小， 这也是由 TJMAX, θJA,和环境温度 TA 所决定的。 最大允许功耗为 PDMAX = (TJMAX - TA)/ θJA 或是极限范围给出的数字中比较低的那个值。 注 3：人体模型，100pF 电容通过 1.5KΩ电阻放电。
page 2 of 8
深圳市惠新晨电子有限公司
MC5833D
非隔离降压型 LED 恒流驱动芯片
引脚图
图2
芯片引脚图
引脚说明
Table 1：引脚说明
引脚号 1 2 3 4 5 6 7 8 GND RADJ NC VDD DRN DRN ISEN ISEN
符号 芯片地
功能 设置开路保护电压，外接电阻到地 空脚，建议接到地上 芯片供电脚 内部高压 MOSFET 的漏级 内部高压 MOSFET 的漏级 电流采样，外接电阻到地 电流采样，外接电阻到地
电感设计计算
MC5833D 工作在 CRM 模式，当电路上电后输出控制 脉冲，内部 MOSFET 将不断工作在导通/关闭状态， 内部 MOS 管打开时，电感也将导通，开始蓄能，直 到达到电流峰值时内部 MOS 管关闭，此间的电感的 导通时间为：
启动
MC5833D 启动电流很低，当系统上电后，启动电阻 对 VDD 电容进行充电，当 VDD 达到开启阈值时，电路 即开始工作。MC5833D 正常工作时，内部电路的工 作电流可以低至 135μA 以下， 并且内部具有独特的 供电机制，因此无需辅助绕组供电。
上海晟矽微电子股份有限公司
page 6 of 8
深圳市惠新晨电子有限公司
MC5833D
非隔离降压型 LED 恒流驱动芯片
此时由上式可知，系统频率与输入电压成正比、与 选择之电感 L 成反比：当输入电压最低（或）电感 取值较大时，系统频率较低，当输入电压最高（或） 电感取值较小时，系统频率较高，因此，在系统输 入电压范围确定时，电感的取值直接影响到系统频 率的范围以及恒流特性。考虑到系统频率不可过低 （例如进入音频范围） ，也不宜过高（导致功率管损 耗过大以及 EMI 影响） ，同时 MC5833D 设定了最小/ 大退磁时间以及最小/大励磁时间，因此在设计时， 建议系统频率设定在 50KHZ～120KHz。 关动作，停止运行，此时，电路工作电源也将下降， 当触发 UVLO 电路时，系统将会重启，如此，可以实 现保护功能的触发、重启工作机制。 若工作过程中，MC5833D 监测到电路结温度超过过 温调节阈值（155℃）时，电路将进入过温调节控制 状态，减小输出电流，以控制输出功率和温升，使 得系统能够保持一个稳定的工作温度范围。
功率环路的面积
减小功率环路的面积，如功率电感、功率管、母 线电容的环路面积，以及功率电感、续流二极管、 输出电容的环路面积，以减小 EMI 辐射。
NC 引脚
NC 引脚内部无连接，建议将其接到芯片地(Pin1), 加强 RADJ Pin 抗干扰能力。
DRAIN 引脚
增加 DRAIN 引脚的铺铜面积以提高芯片散热。
旁路电容
VCC 的旁路电容需要紧靠芯片 VCC 和 GND 引脚。
RADJ 电阻
开路保护电压设置电阻需要尽量靠近芯片 RADJ 引 脚。
R ADJ
V ISEN L 15 RISEN VOVP
10 6 ( Kohm)
地线
电流采样电阻的功率地线尽可能短，且要和芯片 的地线及其它小信号的地线分头接到母线电容的 地端。
IP
L IP 400 ； mA ； TON VIN VLED R ISEN
采样电阻与恒流控制
MC5833D 是工 作在 CRM 模式 中， 其内部 具有 一 个 400mV 的基准电压，这个基准电压与系统中电感原 边峰值电流进行比较计算，通过采样电阻的调节来 实现 LED 驱动电流的大小：
封装形式
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page 7 of 8降压型 LED 恒流驱动芯片
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page 8 of 8
其中：IP 为电感电流峰值；L 为电感值；VIN 为交流 输入整流后的直流值；VLED 为 LED 负载的正向压降 当内部 MOS 管关闭后， 电感电流将从峰值逐渐降低， 直到降低为 0 时，内部 MOS 管将再次开启，此间的 电感关闭时间为：
TOFF
L IP ； VLED
由上可知，电感可计算为：
上海晟矽微电子股份有限公司
page 4 of 8
深圳市惠新晨电子有限公司
MC5833D
非隔离降压型 LED 恒流驱动芯片
电气特性
注 4， 注 5 无特别说明情况下（VDD=15V， TTYP = 25℃） 项目 VDD 钳位电压 工作电流 启动电压 启动电流 欠压保护阈值 采样基准电压 短路时电流检测阈值 动作消隐时间 内部 MOS 关断延迟 DRN 端 MOS 漏源极穿电压 内部 MOS 内阻 内部 MOS 漏电流 RADJ 引脚电压 最大导通时间 符号 VDD_CLP IDD VST IST VUVLO VISEN VISEN_SHT TLEB TDELAY VDSS（BV） RSW IDSS VRADJ TON_MAX VGS=0V/ IDS=250uA VGS=15V/ IDS=0.5A VGS=0V/ VDS=5000V 500 7.5 0.5 1.5 45 1 输出短路 测试条件 0.8mA FSYS=65KHz VDD 上升 VDD=VST - 1V VDD 下降 392 最小 典型 16.9 100 14 120 9 400 198 500 150 最大 17.2 135 14.2 195 9.1 408 单位 V μA V μA V mV mV ns ns V Ω uA V us