EPITHERMAL AU-AG DEPOSIT TYPES – IMPLICATIONS FOR exploration

合集下载

进出口专业英语词汇(P1)

进出口专业英语词汇(P1)

进出口专业英语词汇(P1)p-amine acetanilide 对氨基乙铣苯胺p-aminoazobenzene hydrochloride 对氨基偶氮苯盐酸盐p-aminophenol 对氨基苯酚p-anisidine 对氨基苯甲醚p-benzoquinone 对苯醌p-fluoro aniline 对氟苯胺p-hydroxy phenyl ethyl ketone 对羟基苯乙酮p-Leuconiline 副品红隐色基P-N diode laser PN结二极管激光器P-N junction electroluminescent diode PN结电致发光二极管P-N junction laser PN结激光器P-N junction photodiode PN结光电二极管P-N junction semiconductor laser PN结半导体激光器p-nitroaniline 对硝基苯胺P-type semiconductor P型半导体Paar calorimeter 帕尔量热器Paar turbidimeter 帕尔浊度计Paarlan 异乐灵pabnapar 帕布纳帕小花纹细布Pace 节奏牌手表pacemaker analyser 起搏器分析器pacemaker pulse monitor 起搏器脉冲监视器pacemaker 起搏器pachas 帕查斯马海毛呢pachimeter 弹性切力极限测定计pachometer 测厚计Pachras 帕克勒斯彩条粗布pachyma cocos 茯苓Pachyma Compound Digestive Tonic Pill 保和丸pachymeter 测厚计Pachyrhizua angulatus 粉葛pacific converter 丝束直接成条机Pacific lamprey 太平洋鳗鱼Pacific mackerel 太平洋鲐Pacific yellowfin tuna 黄鳍金枪鱼Pacific 太平洋牌手表pack cloth 打包布pack duck 打包帆布pack dyed yarn 筒子染色纱pack heating furnace 叠板加热炉pack mill 叠板轧机pack rope 打包绳pack sack 旅行背包pack take-off device 卸垛机pack thread 细绳pack tilting device 叠板翻转机pack twine 包扎麻绳pack-sack diamond drill 可背运的轻便金刚石钻机package counter 包装计数器package dryer 筒子烘燥机package linen 亚麻包装布package mill 打包用带钢轧机package tray 整装式塔盘package type air cooler 便携式空气冷却器package-drying machine 筒子纱干燥机packaged air conditioner 组合式空调器packaged boiler 移动式锅炉packaged gas turbine 快装式燃气轮机packaged reactor 装配式反应堆packaged rotary drum dryer 小型转筒式干燥机packaged tea 小包装茶packaged transistor 密封式晶体管packager 包装机packaging container of metal 金属包装容器packaging machine 包装机packaging paper 包装纸packaging production line 包装生产线packbasket 背篓packed column 填料塔packed-bed scrubber 填充床洗涤器packed-lantern-ring exchanger 填料-灯笼-环换热器packer 包装机packet adapter 分组适配器packet handler 分组处理器packet instamatic camera 袖珍型即拍即现照相机packet multiplexer 分组多路复用器packet repeater 分组中继器packet transmission controller 分组传输控制器packet voice and data multiplexer 分组话音与数据多路复用器packet voice multiplexer 分组话音多路复用器packing cloth 打包麻布packing machine 包装机packing machinery 包装机械packing maker 密封接合器packing material 包装材料packing needle 打包针packing paper 包装纸packing press 包装机packing ring 填料环packing rope 包装绳packing sheet 包装布packing tool 打包机packing washer 密封垫圈packless valve 无填料阀packplane 货舱可更换的飞机packsheet 高级打包麻布paco wool 羊驼毛pacputan wool 帕克普坦粗羊毛Pacteron 帕克特龙铁碳磷母合金pad and cover for metal ironing board 金属熨衣板垫和套pad bearing 衬垫轴承pad dyer 轧染机pad lubricator 垫式润滑器pad printing machine 自动移印机pad quilted in diamond stitching 菱形绗褥pad quilted in zigzag stitching 之字绗褥pad relay 衰减器继电器pad with tape bindings 狭带捆边褥pad 拍纸簿Padan 巴丹padauk furniture 红木家具padded back lining 黑背印花里子布padded jacket 夹袄padded shoulder 垫肩padder 垫整电容器padding capacitor 垫整电容器padding cloth 衬布padding condenser 垫整电容器padding machine 打底机padding mangle 轧染机padding 垫料paddings 西装麻衬布paddle agitator 桨式搅拌器paddle badminton 板羽球paddle blade stirrer 桨式搅拌器paddle blade type mixer 叶轮式混合机paddle board 蹼板paddle boat 明轮船paddle climb 攀架paddle drum bleacher 桨鼓漂白机paddle dryer 桨式干燥机paddle dyeing machine 桨叶式染色机paddle engine 明轮发动机paddle fan 离心式通风机paddle feeder 叶片式给料器paddle level switch 扳钮开关paddle loader 桨叶式装载机paddle mixer 叶片式搅拌机paddle passenger steamer 明轮客轮paddle steamer 明轮船paddle stirrer 桨式搅拌机paddle wheel agitator 叶轮式搅拌机paddle wheel elevator 叶轮式提升机paddle wheel water supplier 脚踏水车paddle wheel 桨轮paddle wool washing machine 桨叶式洗毛机paddle 乒乓球拍paddle-box 明轮壳paddle-type kneading machine 桨式混捏机paddle-wheel fan 叶轮式风扇paddock coat 男用紧腰骑马外衣paddy basket 谷箩paddy field cultivator 稻田中耕机paddy field harrow 水田耙paddy field plough 水田犁paddy field tractor 水田拖拉机paddy field weeder 稻田除草机paddy planter 水稻直播机paddy pounder 碾米机paddy transplanter 水稻插秧机paddy transplanting machine 水稻插秧机paddy 稻谷padimate 帕地马酯Padisway silk 帕迭斯威棱纹绸padlette 帕德勒特凸花刺绣padlock 挂锁Padmini 帕德米尼牌汽车padulasoy 棱纹花绸paejama 印度裤Paeonia lactiflora pallas 白芍Paeonia lactiflora 芍药Paeonia suffruticosa 牡丹paesano hemp 帕瑟诺大麻page address register 页面地址寄存器page cord 捆版绳page printer 页式印刷机page reader 页式阅读机page teleprinter 页式电传打字机page teletype 页式电传打字电报机pager 寻呼机paging drum 页鼓paging machine 页码机paging receiver 寻呼机paging set 寻呼机pahmi belly skin plate 猸肷褥子pahmi head plate 猸头皮褥子pahmi head skin plate 猸头褥子pahmi leg plate 猸腿皮褥子pahmi leg skin plate 猸腿褥子pahmi neck plate 猸脖褥子pahmi skin plate 猸子皮褥子pahmi skin 猸子皮pahmi tail hair 猸子尾毛pahom 披巾pahpoon 闪光棉布pail for used dressings 废物桶pail with cover 有盖桶pail 提桶pailette de soie 珠片绸pailette noir 有光细斜纹内衣绸pailette satin 闪光缎paima 派马硬质丝兰属叶纤维pain-alleviating adhesive plaster of musk 麝香镇痛膏pain-relieving plaster for arthritis 关节止痛膏pain-relieving plaster for injury and rheumatism 伤湿祛痛膏painkiller 镇痛剂paint and varnish thinner 油漆清漆稀释剂paint bottle 油漆瓶paint brush ring 画笔套圈paint brush 漆刷paint chipping chisel 铲漆凿paint coating robot 喷漆机器人paint color-changing unit 漆色转换器paint conveyer pump 油漆输送泵paint conveying unit 输漆器paint filler 油漆灌装机paint for automobiles & rolling stocks 汽车及铁道车辆用漆paint for building & construction works 建筑及建筑物用涂料paint for heat treatment of metal 热处理金属涂料paint for plastics 塑料用涂料paint for road marking 路标漆paint heater 热漆器paint material 颜料paint mixer 涂料混合器paint mixing unit 调漆器paint oil 调漆油paint remover 除漆剂paint roller brush 滚筒漆刷paint roller mill 研漆机paint roller 滚漆筒paint scraper 漆铲paint scrubber 洗漆剂paint spatula 拌漆角刀paint sprayer 喷漆器paint spraying gun 喷漆枪paint spraying machine 喷漆机paint stirrer 油漆搅拌器paint stripper 油漆剥离剂paint tester 油漆试验机paint thinner 油漆稀释剂paint yellow 涂料黄paint 油漆paint-plate power supply 涂镀电源paint-spray gun 喷漆枪paintbox 绘画箱painted china 彩色瓷器painted chrome tanned pig leather for lining 涂色铬鞣猪皮衬里革painted earthen & lacquer animal 彩陶漆动物painted earthen animal 彩陶动物painted egg 彩画蛋painted eggshell 彩蛋painted enamel 画珐琅painted fabric 手描花布painted glass 彩色玻璃painted goatskin handbag 羊皮描花手提包painted shell 彩蚌painted silk fan 彩绘绢扇painted wire-wound resistor 涂漆线绕电阻器painter's brush 画刷painter's canvas 油画帆布painter's knife 油漆工刀painter's respirator 油漆匠用呼吸罩painting box 调色盒painting brush 油画毛笔painting gun 喷漆枪painting machine 油漆机painting nozzle 喷漆嘴painting on bamboo curtain 竹帘画painting paper 图画纸painting reproduced by watercolour black printing 木板水印复制绘画painting screen 画屏风painting silk 画绢paintings in booklet 画册paintjet color printer 喷涂式彩色打印机pair cable 双股电缆pair spectrometer 电子偶分光计pair tube 对偶管paired brush 双电刷paired cable 双股电缆paired high and low frequency telecommunication cable 对称型高低频电信电缆paisley shawl 佩斯利细毛披巾paisley 佩斯利涡旋纹花呢paj 洋纺Pajam 帕贾姆棉布pajama checks 格子睡衣布pajamas stripes 条子睡衣布pajamas with 2-button adjustable waistband 两纽搭扣束腰睡衣pajamas with drawstring waistband 束腰抽带睡衣pajamas with waistband 束腰睡衣pajamas 睡衣Pajero 帕杰罗牌汽车pajunette 女睡衣Pakama 帕卡马色格莎笼绸pakamas 帕卡玛围巾布Pakfong 帕克方锌白铜Pakistan wool 巴基斯坦羊毛Paktong 帕克顿白铜palace brocade 花纺palace chair 太师椅palace crepe 派力斯绉palace lantern 宫灯palace plain 派力纺palace wine 宫酒palace 派力司织物palangposh 床罩palatine 女用皮围巾palatorrhaphy operating instrument set 腭裂修补手术刀包palchouli oil 藿香油Palconia 帕尔科尼亚纤维Pale Ale 淡爱尔啤酒pale blue topside paint 蓝灰船壳漆pale brown glaze 浅褐釉pale butterflybush flower 密蒙花pale drying oil 淡干油pale green glaze 浅绿釉pale green porcelain 缥瓷pale yellow galze 浅黄釉paletot sac 直统大衣paletot 男大衣palette cup 调色盅palette for painter 绘画用调色板palette knife 调色刀palette loader 抬板机palette 调色板pall 制动爪palladiazo 偶氮胂钯palladium alloy 钯合金palladium asbestos 钯石棉palladium barrier leak detector 钯隔层检漏仪palladium bearing metal 钯轴承合金palladium black 钯黑palladium chloride 氯化钯palladium diffuser 钯扩散器palladium iodide 碘化钯palladium nitrate 硝酸钯palladium oxide 氧化钯palladium sponge 钯海绵palladium sulfide 硫化钯palladium tube 钯管palladium 钯palladium-copper alloy 钯铜合金palladium-copper 钯铜合金palladium-gold 钯金合金palladium-silver 钯银合金pallas fur 帕拉斯毛皮绒pallas pit viper 蝮蛇pallas 金钯铂合金Pallas 帕拉斯牌手表pallet car 台车pallet carrier 集装箱运输车pallet conveyer mould machine 滑板输送式造型机pallet conveyer 板架式运输机pallet dryer 托板式干燥器pallet loading machine 货盘装运机pallet transporter 货盘运输车pallet truck 码垛车pallet universal loader 货盘通用装载机palletizer 码堆机palletizing machine 叠板机palliasse 草荐pallium 大披肩Pallium 帕利乌姆铝基重载轴承合金palm and cocoanut fibre mixed brush 棕葵混合洗衣刷palm and palm products 棕葵制品palm and palm-leaf products 棕葵制品palm basket 葵篮palm Beach cloth 胖哔叽palm beach 夏服呢palm box 棕丝盒palm broom 棕扫帚palm brush 棕刷palm butter 棕榈油palm civet skin 棕榈猫皮palm civet 棕榈猫palm coir mat 地棕垫palm coir products 棕制品palm cushion 棕靠背垫palm fan 棕扇palm fibre brush 棕丝刷帚palm fibre 棕丝palm hat 棕丝帽palm kernel cake 棕榈仁饼palm kernel meal 棕榈仁粉palm kernel oil 棕榈仁油palm kernel 棕榈仁palm leaf fan of {Xinhui} 新会葵扇palm leaf rib broom 棕骨扫帚palm leaf rib 棕骨palm oil separator 棕油分离机palm oil 棕榈油palm products 葵制品palm rope 棕绳palm sheet 棕片palm slippers 棕丝拖鞋palm sugar 棕榈糖palm wares 棕编织制品palm wax 棕榈蜡palm wine 棕榈酒palmitic acid 棕榈酸Palt 帕尔特牌汽车palungoa fibre 帕隆古纤维pamabrom 巴马溴pamaquine 巴马喹pamdani 帕姆达尼花细布Pamkon 五二四混剂pamna hazara 帕姆纳哈泽拉细布Pamosol 2 Forte 代森锌Pampa wool 潘帕有光长羊毛pampakopetra fibre 高级石棉纤维pamphlet paper 书刊用纸pamphlet track 书刊陈列架pan mill 盘碾机pan car 料斗车pan conveyer 盘式运输机pan cover 平锅盖pan feeder 盘式给料机pan filler 装模机pan grinder 盘式碾磨机pan head rivet with tapered neck 半埋头铆钉pan head rivet 盘头铆钉pan head screw 盘头螺钉pan mill 碾盘式碾磨机pan mixer 锅式拌和机pan nodulizer 盘式造粒机pan pelletizer 圆盘造球机pan scale 盘秤pan tile 波形瓦pan yarn 马毛纱pan 平底锅pan-and roll roofing tile 板瓦和筒瓦pan-holing drill 浅眼凿岩机pan-type pelletizer 盘式造粒机panacea 万灵药panadaptor 景象接收器panalyzor 调频发射机联合测试仪Panama canvas 巴拿马帆布panama hat 巴拿马软草帽Panama suiting 巴拿马西服呢Panama zephyr 巴拿马提花彩色条子布panama 巴拿马薄呢panangin 潘南金Panaplate 敌敌畏panaquilon 人参奎酮Panasonic 松下电器panax ginseng extractum capsule 人参精胶丸Panax ginseng extractum 人参精Panax ginseng 人参Panax japonicum 竹节参Panax major 大叶三七Panax notoginseng 田七Panax pseudo-ginseng wallich 三七pancake coil 扁平线圈pancake engine 水平对置式发动机pancake helix 扁平螺旋线圈pancake reactor 扁平型反应堆pancake synchro 扁平型同步机pancake turn 烙饼铲pancake winding 扁平形绕组pancake 薄煎饼panchpat 邦奇帕染色丝绸panchrest plaster 万应膏panchromatic film 全色胶片panchromatic monochrome television camera 黑白电视全色摄影机panchromatic safety film 全色安全胶卷panchromatic safety roll film 卷筒胶卷panchromatic safety sheet film 散页软片panchromatic vision filter 全色滤光镜pancratic telescope 变焦望远镜pancreatin。

David Cooke_浅成低温热液矿床-2:中硫、低硫型

David Cooke_浅成低温热液矿床-2:中硫、低硫型
金属矿物包括:银金矿,螺状银硫矿,银的硫盐矿物,闪锌矿,方铅矿,黝铜矿‐砷黝铜 矿,黄铜矿,毒砂,磁黄铁矿,硒化物,碲化物。
LS – IS gangue mineralogy
LS – IS 脉石矿物
• SiO2 polymorphs (quartz, chalcedony, amethyst)
SiO2的同质异形体(石英,玉髓,紫水晶)
• Adularia
冰长石
• Illite (sericite)
伊利石(绢云母)
• Chlorite
绿泥石
• Carbonates (calcite, rhodochrosite)
碳酸盐(方解石,菱锰矿)
• Barite and fluorite
重晶石&萤石
Bimurra, Australia
Golden Cross, New Zealand
quartz, chalcedony, adularia, pyrite, base metal sulfides, carbonates, Au‐Ag
Gangue zonation – from surface to depth
脉石矿物的垂直分带
Champagne pool, NZ
Hammond (2004)
Ohaki, NZ
Moonlight prospect, Pajingo
Surface deposits: sinter, hydrothermal eruption breccias
Ore 矿石 Au‐Ag Metals 金属 As, Sb, Zn, Pb, Hg, Se
Alteration
蚀变
adularia‐carbonate, illite (muscovite), smectite, chlorite, epidote

低硫化型与高硫化型浅成低温热液金矿蚀变特征与成矿关系的对比研究_杨永胜

低硫化型与高硫化型浅成低温热液金矿蚀变特征与成矿关系的对比研究_杨永胜

( Moncada and Bodnar,2010) 。
HCO-3 +H+ = CO2( g) +H2 O
( 1)
Ca2+ +2HCO-3 = CaCO3( Cal) +CO2( g) +H2O ( 2)
第4期
杨永胜等: 低硫化型与高硫化型浅成低温热液金矿蚀变特征与成矿关系的对比研究
图 1 低硫化型浅成低温热液金矿床中与成矿相关的典型岩相、矿物及流体包裹体特征 Fig. 1 Characteristics of typical lithofacies,minerals and fluid inclusions related to mineralization
第 51 卷 第 4 期 2015 年 7 月
地质与勘探
GEOLOGY AND EXPLORATION
Vol.51 No.4 July,2015
低硫化型与高硫化型浅成低温热液金矿蚀变 特征与成矿关系的对比研究
杨永胜1 ,吴春明1 ,吕新彪2,3 ,高荣臻2 ,李春诚2 ,邢伟伟4
( 1. 中国地质大学( 武汉) 地质调查研究院,湖北武汉 430074; 2. 中国地质大学( 武汉) 资源学院,湖北武汉 430074;
in low-sulfidation type epithermal gold deposits
a-中度斜层理构造富基质( MRB) 、基质支撑( MSB) 及热液胶结( HB) 复成分角砾岩,HB 中孔洞初为石英-冰长石胶结物充填,后被表生黄 钾铁矾交代( 伊朗 Chah Zard 金银床,Kouhestani et al. ,2012) ; b-银黑色硫化物条带( ginguro) 紧邻灰白色自形-半自形菱形冰长石( ad) 条 带,白色箭头指示矿物矿物生长方向,clay 粘土矿物、py 黄铁矿、qz 石英( 日本 Koryu 金银矿,Shimizu,2011) ; c-块状浅粉色粗粒冰长石与 石英及高品位硫化物交生( 阿根廷 Espejo 银金矿,Wallier,2009) ; d-块状方解石脉晚期的刃片状方解石( 新西兰 Golden Cross 金银矿,Simmons et al. ,2000) ; e-刃片状石英为交代刃片状方解石而呈其假象存在,平行排列或构成格子状构造,后者晶体表面可生长细粒梳状石英 和少量的冰长石( 日本 Hishikari 金矿,Etoh et al. ,2002) ; f-富气相和富液相包裹体共存,气液比多变,指示沸腾过程中捕获多相流体( 墨西 哥中部 Veta Madre 金银矿,Moncada et al. ,2012) a-moderately dipping bedding textures consisting of matrixrich ( MRB) ,matrix-supported ( MSB) and hydrothermal cement ( HB) polymictic breccia,vugs filled by quartz-adularia cement followed by supergene jarosite in HB ( Chah Zard Au-Ag deposit in Iran,Kouhestani et al.,2012) ; b-adularia band consisting of euhedral-subhedral rhombic shapes is followed by a gingruo band; Clay-clay minerals; py-pyrite; qz-quartz ( Koryu Au-Ag deposit in Japan; Shimizu,2011) ; c - coarse-grained massive adularia intergrown with quartz and sulfides ( Espejo Ag - Au deposit in Argentina; Wallier,2009) ; d-platy calcite in late massive calcite veins ( Golden Cross Au-Ag deposit in New Zealand; Simmons et al.,2000) ; e-parallel-type bladed quartz. Several sets of parallel blades occur in this sample,and each set consists of bladed quartz ( Hishikari Au deposit in Japan; Etoh et al., 2002) ; f-fluid inclusion assemblages ( FIAs) consisting of coexisting liquid-rich and vapor-rich

附着体义齿 英语 名词解释 修复学

附着体义齿 英语 名词解释 修复学

附着体义齿英语名词解释修复学Prosthetic Dental Attachments: A Comprehensive ExplorationProsthetic dental attachments, also known as dental prostheses or artificial teeth, are an essential component of modern dentistry. These devices are designed to replace missing teeth or restore the functionality and aesthetics of an individual's smile. Prosthetic dental attachments play a crucial role in maintaining oral health, improving chewing efficiency, and enhancing the overall quality of life for those who have experienced tooth loss or dental issues.The primary purpose of prosthetic dental attachments is to provide a stable and secure foundation for replacement teeth. These attachments can be used in a variety of dental procedures, including partial dentures, complete dentures, and dental implants. Each type of prosthetic dental attachment serves a specific purpose and is tailored to the individual's needs, dental history, and overall oral health.One of the most common types of prosthetic dental attachments is the partial denture. Partial dentures are designed to replace one or more missing teeth within the same dental arch. These attachmentsare typically made of a metal framework, often with a gum-colored acrylic base, and are held in place by clasps or other retentive mechanisms that attach to the remaining natural teeth. Partial dentures can be removable, allowing for easy cleaning and maintenance, or they can be fixed in place, providing a more permanent solution.Another type of prosthetic dental attachment is the complete denture. Complete dentures are used to replace all the teeth in either the upper or lower jaw, or both. These attachments are made of a gum-colored acrylic base with artificial teeth embedded within it. Complete dentures are designed to fit snugly over the gums, creating a secure and stable platform for chewing and speaking. Unlike partial dentures, complete dentures are typically removable, allowing for easy cleaning and maintenance.In addition to partial and complete dentures, prosthetic dental attachments can also be used in conjunction with dental implants. Dental implants are titanium posts that are surgically placed into the jawbone, providing a secure and stable foundation for replacement teeth. Prosthetic dental attachments, such as crowns, bridges, or even full-arch restorations, can then be attached to the implants, creating a natural-looking and functional dental restoration.The process of creating and fitting prosthetic dental attachmentsinvolves a series of steps, including initial consultation, impressions and measurements, design and fabrication, and final placement. The dentist or prosthodontist, a specialist in the restoration and replacement of teeth, works closely with the patient to ensure that the prosthetic dental attachment fits comfortably, functions properly, and meets the individual's aesthetic and functional requirements.One of the key benefits of prosthetic dental attachments is their ability to restore the functionality of the teeth. Missing teeth can lead to a variety of oral health issues, such as difficulty chewing, speech impediments, and even changes in facial structure. Prosthetic dental attachments help to alleviate these problems by providing a stable and secure platform for replacement teeth, allowing the individual to eat, speak, and smile with confidence.In addition to functional benefits, prosthetic dental attachments can also have a significant impact on an individual's self-esteem and overall quality of life. The loss of natural teeth can be a traumatic experience, affecting an individual's appearance, social interactions, and sense of well-being. Prosthetic dental attachments can help to restore the aesthetics of the smile, boosting self-confidence and improving the individual's overall quality of life.The field of prosthetic dental attachments is constantly evolving, with advancements in materials, design, and manufacturing techniques.New technologies, such as computer-aided design (CAD) and computer-aided manufacturing (CAM), have revolutionized the way prosthetic dental attachments are created, making the process more efficient, accurate, and personalized to the individual's needs.In conclusion, prosthetic dental attachments are an essential component of modern dentistry, providing a comprehensive solution for individuals who have experienced tooth loss or dental issues. These attachments serve to restore the functionality and aesthetics of the teeth, improving oral health, chewing efficiency, and overall quality of life. As the field continues to evolve, the importance of prosthetic dental attachments in maintaining and enhancing the health and well-being of individuals will only continue to grow.。

半导体制造技术

半导体制造技术

Semiconductor Manufacturing Technology半导体制造技术Instructor’s ManualMichael QuirkJulian SerdaCopyright Prentice HallTable of Contents目录OverviewI. Chapter1. Semiconductor industry overview2. Semiconductor materials3. Device technologies—IC families4. Silicon and wafer preparation5. Chemicals in the industry6. Contamination control7. Process metrology8. Process gas controls9. IC fabrication overview10. Oxidation11. Deposition12. Metallization13. Photoresist14. Exposure15. Develop16. Etch17. Ion implant18. Polish19. Test20. Assembly and packagingII. Answers to End-of-Chapter Review QuestionsIII. Test Bank (supplied on diskette)IV. Chapter illustrations, tables, bulleted lists and major topics (supplied on CD-ROM)Notes to Instructors:1)The chapter overview provides a concise summary of the main topics in each chapter.2)The correct answer for each test bank question is highlighted in bold. Test bankquestions are based on the end-of-chapter questions. If a student studies the end-of-chapter questions (which are linked to the italicized words in each chapter), then they will be successful on the test bank questions.2Chapter 1Introduction to the Semiconductor Industry Die:管芯 defective:有缺陷的Development of an Industry•The roots of the electronic industry are based on the vacuum tube and early use of silicon for signal transmission prior to World War II. The first electronic computer, the ENIAC, wasdeveloped at the University of Pennsylvania during World War II.•William Shockley, John Bardeen and Walter Brattain invented the solid-state transistor at Bell Telephone Laboratories on December 16, 1947. The semiconductor industry grew rapidly in the 1950s to commercialize the new transistor technology, with many early pioneers working inSilicon Valley in Northern California.Circuit Integration•The first integrated circuit, or IC, was independently co-invented by Jack Kilby at Texas Instruments and Robert Noyce at Fairchild Semiconductor in 1959. An IC integrates multiple electronic components on one substrate of silicon.•Circuit integration eras are: small scale integration (SSI) with 2 - 50 components, medium scale integration (MSI) with 50 – 5k components, large scale integration (LSI) with 5k to 100kcomponents, very large scale integration (VLSI) with 100k to 1M components, and ultra large scale integration (ULSI) with > 1M components.1IC Fabrication•Chips (or die) are fabricated on a thin slice of silicon, known as a wafer (or substrate). Wafers are fabricated in a facility known as a wafer fab, or simply fab.•The five stages of IC fabrication are:Wafer preparation: silicon is purified and prepared into wafers.Wafer fabrication: microchips are fabricated in a wafer fab by either a merchant chip supplier, captive chip producer, fabless company or foundry.Wafer test: Each individual die is probed and electrically tested to sort for good or bad chips.Assembly and packaging: Each individual die is assembled into its electronic package.Final test: Each packaged IC undergoes final electrical test.•Key semiconductor trends are:Increase in chip performance through reduced critical dimensions (CD), more components per chip (Moore’s law, which predicts the doubling of components every 18-24 months) andreduced power consumption.Increase in chip reliability during usage.Reduction in chip price, with an estimated price reduction of 100 million times for the 50 years prior to 1996.The Electronic Era•The 1950s saw the development of many different types of transistor technology, and lead to the development of the silicon age.•The 1960s were an era of process development to begin the integration of ICs, with many new chip-manufacturing companies.•The 1970s were the era of medium-scale integration and saw increased competition in the industry, the development of the microprocessor and the development of equipment technology. •The 1980s introduced automation into the wafer fab and improvements in manufacturing efficiency and product quality.•The 1990s were the ULSI integration era with the volume production of a wide range of ICs with sub-micron geometries.Career paths•There are a wide range of career paths in semiconductor manufacturing, including technician, engineer and management.2Chapter 2 Characteristics of Semiconductor MaterialsAtomic Structure•The atomic model has three types of particles: neutral neutrons(不带电的中子), positively charged protons(带正电的质子)in the nucleus and negatively charged electrons(带负电的核外电子) that orbit the nucleus. Outermost electrons are in the valence shell, and influence the chemical and physical properties of the atom. Ions form when an atom gains or loses one or more electrons.The Periodic Table•The periodic table lists all known elements. The group number of the periodic table represents the number of valence shell electrons of the element. We are primarily concerned with group numbers IA through VIIIA.•Ionic bonds are formed when valence shell electrons are transferred from the atoms of one element to another. Unstable atoms (e.g., group VIIIA atoms because they lack one electron) easily form ionic bonds.•Covalent bonds have atoms of different elements that share valence shell electrons.3Classifying Materials•There are three difference classes of materials:ConductorsInsulatorsSemiconductors•Conductor materials have low resistance to current flow, such as copper. Insulators have high resistance to current flow. Capacitance is the storage of electrical charge on two conductive plates separated by a dielectric material. The quality of the insulation material between the plates is the dielectric constant. Semiconductor materials can function as either a conductor or insulator.Silicon•Silicon is an elemental semiconductor material because of four valence shell electrons. It occurs in nature as silica and is refined and purified to make wafers.•Pure silicon is intrinsic silicon. The silicon atoms bond together in covalent bonds, which defines many of silicon’s properties. Silicon atoms bond together in set, repeatable patterns, referred to asa crystal.•Germanium was the first semiconductor material used to make chips, but it was soon replaced by silicon. The reasons for this change are:Abundance of siliconHigher melting temperature for wider processing rangeWide temperature range during semiconductor usageNatural growth of silicon dioxide•Silicon dioxide (SiO2) is a high quality, stable electrical insulator material that also serves as a good chemical barrier to protect silicon from external contaminants. The ability to grow stable, thin SiO2 is fundamental to the fabrication of Metal-Oxide-Semiconductor (MOS) devices. •Doping increases silicon conductivity by adding small amounts of other elements. Common dopant elements are from trivalent, p-type Group IIIA (boron) and pentavalent, n-type Group VA (phosphorus, arsenic and antimony).•It is the junction between the n-type and p-type doped regions (referred to as a pn junction) that permit silicon to function as a semiconductor.4Alternative Semiconductor Materials•The alternative semiconductor materials are primarily the compound semiconductors. They are formed from Group IIIA and Group VA (referred to as III-V compounds). An example is gallium arsenide (GaAs).•Some alternative semiconductors come from Group IIA and VIA, referred to as II-VI compounds. •GaAs is the most common III-V compound semiconductor material. GaAs ICs have greater electron mobility, and therefore are faster than ICs made with silicon. GaAs ICs also have higher radiation hardness than silicon, which is better for space and military applications. The primary disadvantage of GaAs is the lack of a natural oxide.5Chapter 3Device TechnologiesCircuit Types•There are two basic types of circuits: analog and digital. Analog circuits have electrical data that varies continuously over a range of voltage, current and power values. Digital circuits have operating signals that vary about two distinct voltage levels – a high and a low.Passive Component Structures•Passive components such as resistors and capacitors conduct electrical current regardless of how the component is connected. IC resistors are a passive component. They can have unwanted resistance known as parasitic resistance. IC capacitor structures can also have unintentional capacitanceActive Component Structures•Active components, such as diodes and transistors can be used to control the direction of current flow. PN junction diodes are formed when there is a region of n-type semiconductor adjacent to a region of p-type semiconductor. A difference in charge at the pn junction creates a depletion region that results in a barrier voltage that must be overcome before a diode can be operated. A bias voltage can be configured to have a reverse bias, with little or no conduction through the diode, or with a forward bias, which permits current flow.•The bipolar junction transistor (BJT) has three electrodes and two pn junctions. A BJT is configured as an npn or pnp transistor and biased for conduction mode. It is a current-amplifying device.6• A schottky diode is formed when metal is brought in contact with a lightly doped n-type semiconductor material. This diode is used in faster and more power efficient BJT circuits.•The field-effect transistor (FET), a voltage-amplifying device, is more compact and power efficient than BJT devices. A thin gate oxide located between the other two electrodes of the transistor insulates the gate on the MOSFET. There are two categories of MOSFETs, nMOS (n-channel) and pMOS (p-channel), each which is defined by its majority current carriers. There is a biasing scheme for operating each type of MOSFET in conduction mode.•For many years, nMOS transistors have been the choice of most IC manufacturers. CMOS, with both nMOS and pMOS transistors in the same IC, has been the most popular device technology since the early 1980s.•BiCMOS technology makes use of the best features of both CMOS and bipolar technology in the same IC device.•Another way to categorize FETs is in terms of enhancement mode and depletion mode. The major different is in the way the channels are doped: enhancement-mode channels are doped opposite in polarity to the source and drain regions, whereas depletion mode channels are doped the same as their respective source and drain regions.Latchup in CMOS Devices•Parasitic transistors can create a latchup condition(???????) in CMOS ICs that causes transistors to unintentionally(无心的) turn on. To control latchup, an epitaxial layer is grown on the wafer surface and an isolation barrier(隔离阻障)is placed between the transistors. An isolation layer can also be buried deep below the transistors.Integrated Circuit Productsz There are a wide range of semiconductor ICs found in electrical and electronic products. This includes the linear IC family, which operates primarily with anal3og circuit applications, and the digital IC family, which includes devices that operate with binary bits of data signals.7Chapter 4Silicon and Wafer Preparation8z Semiconductor-Grade Silicon•The highly refined silicon used for wafer fabrication is termed semiconductor-grade silicon (SGS), and sometimes referred to as electronic-grade silicon. The ultra-high purity of semiconductor-grade silicon is obtained from a multi-step process referred to as the Siemens process.Crystal Structure• A crystal is a solid material with an ordered, 3-dimensional pattern over a long range. This is different from an amorphous material that lacks a repetitive structure.•The unit cell is the most fundamental entity for the long-range order found in crystals. The silicon unit cell is a face-centered cubic diamond structure. Unit cells can be organized in a non-regular arrangement, known as a polycrystal. A monocrystal are neatly arranged unit cells.Crystal Orientation•The orientation of unit cells in a crystal is described by a set of numbers known as Miller indices.The most common crystal planes on a wafer are (100), (110), and (111). Wafers with a (100) crystal plane orientation are most common for MOS devices, whereas (111) is most common for bipolar devices.Monocrystal Silicon Growth•Silicon monocrystal ingots are grown with the Czochralski (CZ) method to achieve the correct crystal orientation and doping. A CZ crystal puller is used to grow the silicon ingots. Chunks of silicon are heated in a crucible in the furnace of the puller, while a perfect silicon crystal seed is used to start the new crystal structure.• A pull process serves to precisely replicate the seed structure. The main parameters during the ingot growth are pull rate and crystal rotation. More homogeneous crystals are achieved with a magnetic field around the silicon melt, known as magnetic CZ.•Dopant material is added to the melt to dope the silicon ingot to the desired electrical resistivity.Impurities are controlled during ingot growth. A float-zone crystal growth method is used toachieve high-purity silicon with lower oxygen content.•Large-diameter ingots are grown today, with a transition underway to produce 300-mm ingot diameters. There are cost benefits for larger diameter wafers, including more die produced on a single wafer.Crystal Defects in Silicon•Crystal defects are interruptions in the repetitive nature of the unit cell. Defect density is the number of defects per square centimeter of wafer surface.•Three general types of crystal defects are: 1) point defects, 2) dislocations, and 3) gross defects.Point defects are vacancies (or voids), interstitial (an atom located in a void) and Frenkel defects, where an atom leaves its lattice site and positions itself in a void. A form of dislocation is astacking fault, which is due to layer stacking errors. Oxygen-induced stacking faults are induced following thermal oxidation. Gross defects are related to the crystal structure (often occurring during crystal growth).Wafer Preparation•The cylindrical, single-crystal ingot undergoes a series of process steps to create wafers, including machining operations, chemical operations, surface polishing and quality checks.•The first wafer preparation steps are the shaping operations: end removal, diameter grinding, and wafer flat or notch. Once these are complete, the ingot undergoes wafer slicing, followed by wafer lapping to remove mechanical damage and an edge contour. Wafer etching is done to chemically remove damage and contamination, followed by polishing. The final steps are cleaning, wafer evaluation and packaging.Quality Measures•Wafer suppliers must produce wafers to stringent quality requirements, including: Physical dimensions: actual dimensions of the wafer (e.g., thickness, etc.).Flatness: linear thickness variation across the wafer.Microroughness: peaks and valleys found on the wafer surface.Oxygen content: excessive oxygen can affect mechanical and electrical properties.Crystal defects: must be minimized for optimum wafer quality.Particles: controlled to minimize yield loss during wafer fabrication.Bulk resistivity(电阻系数): uniform resistivity from doping during crystal growth is critical. Epitaxial Layer•An epitaxial layer (or epi layer) is grown on the wafer surface to achieve the same single crystal structure of the wafer with control over doping type of the epi layer. Epitaxy minimizes latch-up problems as device geometries continue to shrink.Chapter 5Chemicals in Semiconductor FabricationEquipment Service Chase Production BayChemical Supply Room Chemical Distribution Center Holding tank Chemical drumsProcess equipmentControl unit Pump Filter Raised and perforated floorElectronic control cablesSupply air ductDual-wall piping for leak confinement PumpFilterChemical control and leak detection Valve boxes for leak containment Exhaust air ductStates of Matter• Matter in the universe exists in 3 basic states (宇宙万物存在着三种基本形态): solid, liquid andgas. A fourth state is plasma.Properties of Materials• Material properties are the physical and chemical characteristics that describe its unique identity.• Different properties for chemicals in semiconductor manufacturing are: temperature, pressure andvacuum, condensation, vapor pressure, sublimation and deposition, density, surface tension, thermal expansion and stress.Temperature is a measure of how hot or cold a substance is relative to another substance. Pressure is the force exerted per unit area. Vacuum is the removal of gas molecules.Condensation is the process of changing a gas into a liquid. Vaporization is changing a liquidinto a gas.Vapor pressure is the pressure exerted by a vapor in a closed container at equilibrium.Sublimation is the process of changing a solid directly into a gas. Deposition is changing a gas into a solid.Density is the mass of a substance divided by its volume.Surface tension of a liquid is the energy required to increase the surface area of contact.Thermal expansion is the increase in an object’s dimension due to heating.Stress occurs when an object is exposed to a force.Process Chemicals•Semiconductor manufacturing requires extensive chemicals.• A chemical solution is a chemical mixture. The solvent is the component of the solution present in larger amount. The dissolved substances are the solutes.•Acids are solutions that contain hydrogen and dissociate in water to yield hydronium ions. A base is a substance that contains the OH chemical group and dissociates in water to yield the hydroxide ion, OH-.•The pH scale is used to assess the strength of a solution as an acid or base. The pH scale varies from 0 to 14, with 7 being the neutral point. Acids have pH below 7 and bases have pH values above 7.• A solvent is a substance capable of dissolving another substance to form a solution.• A bulk chemical distribution (BCD) system is often used to deliver liquid chemicals to the process tools. Some chemicals are not suitable for BCD and instead use point-of-use (POU) delivery, which means they are stored and used at the process station.•Gases are generally categorized as bulk gases or specialty gases. Bulk gases are the relatively simple gases to manufacture and are traditionally oxygen, nitrogen, hydrogen, helium and argon.The specialty gases, or process gases, are other important gases used in a wafer fab, and usually supplied in low volume.•Specialty gases are usually transported to the fab in metal cylinders.•The local gas distribution system requires a gas purge to flush out undesirable residual gas. Gas delivery systems have special piping and connections systems. A gas stick controls the incoming gas at the process tool.•Specialty gases may be classified as hydrides, fluorinated compounds or acid gases.Chapter 6Contamination Control in Wafer FabsIntroduction•Modern semiconductor manufacturing is performed in a cleanroom, isolated from the outside environment and contaminants.Types of contamination•Cleanroom contamination has five categories: particles, metallic impurities, organic contamination, native oxides and electrostatic discharge. Killer defects are those causes of failure where the chip fails during electrical test.Particles: objects that adhere to a wafer surface and cause yield loss. A particle is a killer defect if it is greater than one-half the minimum device feature size.Metallic impurities: the alkali metals found in common chemicals. Metallic ions are highly mobile and referred to as mobile ionic contaminants (MICs).Organic contamination: contains carbon, such as lubricants and bacteria.Native oxides: thin layer of oxide growth on the wafer surface due to exposure to air.Electrostatic discharge (ESD): uncontrolled transfer of static charge that can damage the microchip.Sources and Control of Contamination•The sources of contamination in a wafer fab are: air, humans, facility, water, process chemicals, process gases and production equipment.Air: class number designates the air quality inside a cleanroom by defining the particle size and density.Humans: a human is a particle generator. Humans wear a cleanroom garment and follow cleanroom protocol to minimize contamination.Facility: the layout is generally done as a ballroom (open space) or bay and chase design.Laminar airflow with air filtering is used to minimize particles. Electrostatic discharge iscontrolled by static-dissipative materials, grounding and air ionization.Ultrapure deiniozed (DI) water: Unacceptable contaminants are removed from DI water through filtration to maintain a resistivity of 18 megohm-cm. The zeta potential represents a charge on fine particles in water, which are trapped by a special filter. UV lamps are used for bacterial sterilization.Process chemicals: filtered to be free of contamination, either by particle filtration, microfiltration (membrane filter), ultrafiltration and reverse osmosis (or hyperfiltration).Process gases: filtered to achieve ultraclean gas.Production equipment: a significant source of particles in a fab.Workstation design: a common layout is bulkhead equipment, where the major equipment is located behind the production bay in the service chase. Wafer handling is done with robotic wafer handlers. A minienvironment is a localized environment where wafers are transferred on a pod and isolated from contamination.Wafer Wet Cleaning•The predominant wafer surface cleaning process is with wet chemistry. The industry standard wet-clean process is the RCA clean, consisting of standard clean 1 (SC-1) and standard clean 2 (SC-2).•SC-1 is a mixture of ammonium hydroxide, hydrogen peroxide and DI water and capable of removing particles and organic materials. For particles, removal is primarily through oxidation of the particle or electric repulsion.•SC-2 is a mixture of hydrochloric acid, hydrogen peroxide and DI water and used to remove metals from the wafer surface.•RCA clean has been modified with diluted cleaning chemistries. The piranha cleaning mixture combines sulfuric acid and hydrogen peroxide to remove organic and metallic impurities. Many cleaning steps include an HF last step to remove native oxide.•Megasonics(兆声清洗) is widely used for wet cleaning. It has ultrasonic energy with frequencies near 1 MHz. Spray cleaning will spray wet-cleaning chemicals onto the wafer. Scrubbing is an effective method for removing particles from the wafer surface.•Wafer rinse is done with overflow rinse, dump rinse and spray rinse. Wafer drying is done with spin dryer or IPA(异丙醇) vapor dry (isopropyl alcohol).•Some alternatives to RCA clean are dry cleaning, such as with plasma-based cleaning, ozone and cryogenic aerosol cleaning.Chapter 7Metrology and Defect InspectionIC Metrology•In a wafer fab, metrology refers to the techniques and procedures for determining physical and electrical properties of the wafer.•In-process data has traditionally been collected on monitor wafers. Measurement equipment is either stand-alone or integrated.•Yield is the percent of good parts produced out of the total group of parts started. It is an indicator of the health of the fabrication process.Quality Measures•Semiconductor quality measures define the requirements for specific aspects of wafer fabrication to ensure acceptable device performance.•Film thickness is generally divided into the measurement of opaque film or transparent film. Sheet resistance measured with a four-point probe is a common method of measuring opaque films (e.g., metal film). A contour map shows sheet resistance deviations across the wafer surface.•Ellipsometry is a nondestructive, noncontact measurement technique for transparent films. It works based on linearly polarized light that reflects off the sample and is elliptically polarized.•Reflectometry is used to measure a film thickness based on how light reflects off the top and bottom surface of the film layer. X-ray and photoacoustic technology are also used to measure film thickness.•Film stress is measured by analyzing changes in the radius of curvature of the wafer. Variations in the refractive index are used to highlight contamination in the film.•Dopant concentration is traditionally measured with a four-point probe. The latest technology is the thermal-wave system, which measures the lattice damage in the implanted wafer after ion implantation. Another method for measuring dopant concentration is spreading resistance probe. •Brightfield detection is the traditional light source for microscope equipment. An optical microscope uses light reflection to detect surface defects. Darkfield detection examines light scattered off defects on the wafer surface. Light scattering uses darkfield detection to detectsurface particles by illuminating the surface with laser light and then using optical imaging.•Critical dimensions (CDs) are measured to achieve precise control over feature size dimensions.The scanning electron microscope is often used to measure CDs.•Conformal step coverage is measured with a surface profiler that has a stylus tip.•Overlay registration measures the ability to accurately print photoresist patterns over a previously etched pattern.•Capacitance-voltage (C-V) test is used to verify acceptable charge conditions and cleanliness at the gate structure in a MOS device.Analytical Equipment•The secondary-ion mass spectrometry (SIMS) is a method of eroding a wafer surface with accelerated ions in a magnetic field to analyze the surface material composition.•The atomic force microscope (AFM) is a surface profiler that scans a small, counterbalanced tip probe over the wafer to create a 3-D surface map.•Auger electron spectroscopy (AES) measures composition on the wafer surface by measuring the energy of the auger electrons. It identifies elements to a depth of about 2 nm. Another instrument used to identify surface chemical species is X-ray photoelectron spectroscopy (XPS).•Transmission electron microscopy (TEM) uses a beam of electrons that is transmitted through a thin slice of the wafer. It is capable of quantifying very small features on a wafer, such as silicon crystal point defects.•Energy-dispersive spectrometer (EDX) is a widely used X-ray detection method for identifying elements. It is often used in conjunction with the SEM.• A focused ion beam (FIB) system is a destructive technique that focuses a beam of ions on the wafer to carve a thin cross section from any wafer area. This permits analysis of the wafermaterial.Chapter 8Gas Control in Process ChambersEtch process chambers••The process chamber is a controlled vacuum environment where intended chemical reactions take place under controlled conditions. Process chambers are often configured as a cluster tool. Vacuum•Vacuum ranges are low (rough) vacuum, medium vacuum, high vacuum and ultrahigh vacuum (UHV). When pressure is lowered in a vacuum, the mean free path(平均自由行程) increases, which is important for how gases flow through the system and for creating a plasma.Vacuum Pumps•Roughing pumps are used to achieve a low to medium vacuum and to exhaust a high vacuum pump. High vacuum pumps achieve a high to ultrahigh vacuum.•Roughing pumps are dry mechanical pumps or a blower pump (also referred to as a booster). Two common high vacuum pumps are a turbomolecular (turbo) pump and cryopump. The turbo pump is a reliable, clean pump that works on the principle of mechanical compression. The cryopump isa capture pump that removes gases from the process chamber by freezing them.。

不稳定斑块动物模型英语

不稳定斑块动物模型英语

不稳定斑块动物模型英语The animal model for unstable plaque refers to a research model used to study the development andprogression of unstable atherosclerotic plaques in animals. Atherosclerotic plaques are deposits of fats, cholesterol, and other substances that build up in the walls of arteries, leading to atherosclerosis. Unstable plaques areparticularly dangerous as they are more prone to rupture, leading to blood clot formation and potentially causing a heart attack or stroke.In the context of the animal model, researchers may use various animal species such as mice, rabbits, or pigs to mimic the conditions of unstable plaques seen in humans. These models allow scientists to investigate the underlying mechanisms of plaque instability, test potentialtherapeutic interventions, and evaluate the efficacy and safety of new treatments.From a biological perspective, the animal modelprovides insights into the cellular and molecular processes involved in the development of unstable plaques. It allows researchers to study factors such as inflammation, lipid accumulation, smooth muscle cell proliferation, and therole of immune cells in plaque destabilization.Furthermore, the use of animal models also enables the assessment of imaging techniques for detecting and characterizing unstable plaques, as well as the evaluation of biomarkers that may indicate plaque vulnerability.Ethically, the use of animal models raises important considerations regarding the welfare of the animals involved in research. Scientists and regulatory bodies must ensure that animal studies are conducted with the highest standards of care and ethical treatment, and that alternative methods, such as in vitro models or computer simulations, are considered whenever possible.In summary, the animal model for unstable plaques in atherosclerosis research plays a crucial role in advancing our understanding of plaque development and rupture, aswell as in the development and testing of potential therapeutic strategies. It provides valuable insights into the pathophysiology of unstable plaques, the assessment of diagnostic tools, and the ethical considerations of animal research in this field.。

浅成低温型热液矿床——怀特博士讲座课件1

浅成低温型热液矿床——怀特博士讲座课件1

Form of Deposits
矿床的形状
Typical shape like a tooth or an inverted cup
典型的形状象牙齿或倒转的酒杯
PLAN
平面
SECTION
截面
Bingham Canyon, Utah
Character of Ore
• • • • • • • Stockwork of barren quartz veins Stockwork of quartz-magnetite veins Stockwork of quartz-sulfide veins Stockwork of sulfidic fractures Breccias of many types Disseminated sulfides (minor) Supergene enrichment very important
有些产于非常大的侵入体中
• The intrusions can be equigranular, not always porphyritic!
侵入体可能是等粒的而不是常见的斑状
Intrusion Geometries 侵入体的几何形状
Arizona Cu-Mo PCDs
Subeconomic PCD
斑岩型矿床
地球上Cu,Mo,Au的丰富资源 Noel C. White
Asia Now Resources Thayer Lindsley Lecturer Society of Economic Geologists
Antapaccay porphyry Cu deposit, Peru
Porphyry Ore Deposits 斑岩型矿床

赣南印支期中硫化型浅成低温热液银矿床的发现和意义

赣南印支期中硫化型浅成低温热液银矿床的发现和意义

作为找矿标志(Sillitoe et al., 2003; Mao et al., 2011), 故受到广泛关注。浅成低温热液矿床的分类方案较
* 本文得到国家自然科学基金项目(编号:41430314)、中央级公益性科研院所科研业务费(编号:JYYWF20180601、K1617)和全国矿产 资源潜力动态评价项目(编号:DD20190193)联合资助
第 40 卷 第 3 期
吴胜华等:赣南印支期中硫化型浅成低温热液银矿床的发现和意义
639
热液(隐爆角砾岩筒)系统在垂向上的延伸长度。 作者获得年坑隐爆角砾岩筒底部的花岗斑岩
角 砾 的 LA - ICP - MS 锆 石 U - Pb 加 权 平 均 年 龄 为 (243.3±1.9)Ma(MSWD=2.0)(图 3a);切穿引爆角 砾 岩 筒 的 辉 绿 岩 脉 的 LA-ICP-MS 锆 石 U-Pb 加 权 平均年龄为(232.2±1.5)Ma(MSWD=1.6)(图 3b); 引 爆 角 砾 岩 筒 中 胶 结 物 中 白 云 母 的 Ar40-Ar39 同 位 素 坪 年 龄 为(234.6±2.2)Ma(MSWD=1.34)(未 发 表 资 料)。 这 些 数 据 表 明 年 坑 银 矿 床 形 成 于 三 叠 纪 。 结 合 已 有 资 料 表 明 ,该 矿 是 华 南 地 区 目 前 发 现的首例印支期的中硫化型浅成低温热液中矿 床 。 据 此 ,作 者 认 为 赣 南 会 昌 地 区 斑 岩 - 引 爆 角 砾 岩 筒 成 矿 系 统 包 括 2 期 :① 三 叠 纪 中 硫 化 型 浅 成 低温热液银矿 ;② 白垩纪斑岩-浅成低温热液(铜 锡 金 银)成 矿 系 统 。 年 坑 矿 床 的 发 现 暗 示 在 赣 南 地区具有寻找印支期斑岩-浅成低温热液钼银或 锡银成矿系统的潜力。
  1. 1、下载文档前请自行甄别文档内容的完整性,平台不提供额外的编辑、内容补充、找答案等附加服务。
  2. 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
  3. 3、如文档侵犯您的权益,请联系客服反馈,我们会尽快为您处理(人工客服工作时间:9:00-18:30)。

EPITHERMAL AU-AG DEPOSIT TYPES – IMPLICATIONS FOR EXPLORATIONGreg Corbett, Consultant Economic Geologist29 Carr St, North SydneyAustralia, 2060office@ABSTRACTExplorationists should be aware that differences between epithermal Au-Ag deposit types influence responses in exploration to geochemical and geophysical techniques, as well as the economic value of projects. An understanding of the characteristics of these styles can aid in the prioritisation of the more prospective projects and assist in dealing with pitfalls such as supergene enrichment and irregular Au distribution. Importantly, the exploration implications of deposit style facilitates targeting of higher Au-Ag grade ores. Traditional subdivisions between high and low sulphidation are further enhanced by analysis of different styles of low sulphidation epithermal Au-Ag. Intrusion-related low sulphidation Au-Ag mineralisation grades temporally and spatially from initial quartz sulphide Au + Cu mineralisation to that termed carbonate-base metal Au using SW Pacific examples, and polymetallic Ag-Ag in the Andes. Epithermal terminology is only used for deposits developed at highest crustal levels. The intrusion-related low sulphidation epithermal-quartz Au-Ag deposits, which display links the quartz sulphide Au deposits, are gangue-poor and may host bonanza Au. The low sulphidation epithermal banded chalcedony-ginguro Au-Ag deposits (formerly termed adularia-sericite epithermal Au-Ag) host local bonanza Au-Ag in the ginguro sulphidic layers and may display links to deeper level polymetallic veins, and are common in rift settings. Low sulphidation deposits display varying degrees of flooding by quartz deposited from circulating meteoric-dominated waters and hence the association with dilatant structural settings. High sulphidation Au-Ag deposits develop as a magmatic vapour rich fluid depressurises during the rapid rise to higher crustal levels without interaction with ground waters, and so forms an extremely acidic fluid. The progressive cooling and neutralisation of this acid fluid by wall rock reaction produces the characteristic zoned alteration which is overprinted by sulphides, typically pyrite-enargite and local covellite, with a gangue including alunite and barite.INTRODUCTIONIt is important for exploration geologists to recognise the different types of epithermal Au-Ag mineralisation and the links between them in ore systems. The economic value of a project is influenced by the style of epithermal mineralisation, as some styles display higher Au grades, different Au:Ag ratios and metallurgical characteristics. In the exploration environment there may be considerable variation in pathfinder geochemical signatures and geophysical chargeability and resistivity responses. All these features can be best categorised by geological models built up by analyses of many exploration field examples (Corbett, 2004).An understanding of epithermal deposit type may facilitate the more rapid identification of economic mineralisation and rejection of unsuitable projects, and also allow the explorationist to better envisage the subsurface anatomy of an exploration project in order to plan drill testing. However, explorationists must remain flexible in the use of geological models for epithermal deposit types and be ready to modify any existingexploration model as new data emerges. The science we use is constantly developing, and so we must always be ready to accommodate geological scenarios which do not fit existing frameworks. Careful preservation of the original factual data is essential in order to facilitate later variations in interpretation.Figure 1. Conceptual model illustrating styles of magmatic arc Au-Ag-Cu mineralisation. EPITHERMAL TERMINOLOGYSchemes for the classification of epithermal Au-Ag deposit styles began with the initial recognition of the development of epithermal mineralisation at shallower crustal levels than mesothermal and porphyry deposits (Lindgren 1922, 1933), and progressively incorporated different deposit styles using the acid sulphate and adularia-sericite terminology (Hayba et al., 1985; Heald et al., 1987), which later became the high and low sulphidation classifications (Hedenquist 1987; White and Hedenquist, 1990). This classification relied upon the sulphidation state of sulphur within characteristic mineral assemblages such as enargite for high sulphidation, and pyrite, galena, sphalerite for low sulphidation, and not the overall sulphide content, as well as recognition of associated alteration types. Using mainly Southwest Pacific rim deposit examples, low sulphidation Au + Ag + Cu deposits have for some years divided into an intrusion-related sulphide-rich group, grading from early to late and generally deeper to shallower crustal levels as: quartz-sulphide Au + Cu, carbonate-base metal Au, (including the Andean polymetallic Au-Ag veins), and epithermal quartz Au-Ag, the latter distinguished from the low sulphidation sulphide-poor banded epithermal quartz vein deposits (Leach and Corbett, 1993, 1994, 1995; Corbett and Leach 1998; Corbett, 2002a). More recently, Sillitoe and Hedenquist (2003) cite a similar sulphide distinction documented from Nevada by John (2001) in attributing part of the carbonate-base metal Au – polymetallic Au-Ag portion of the intrusion-related low sulphidation group of deposits to the intermediate sulphidation epithermal Au class, as categorised by Einaudi et al. (2003). The intermediate sulphidation terminology is applicable to the rare settings where hydrothermal fluids evolve from high to low sulphidation, commonly with tennantite-bearing mineralassemblages (Wafi, Papua New Guinea; Leach, 1999: Viento-Cuarzo, El Indio district). However, the existing terminology is preferred for the continuum of low sulphidation deposit types identified in numerous examples as passing through early low sulphidation quartz-sulphide Au, to carbonate-base metal Au – polymetallic Ag-Ag and later epithermal quartz Au-Ag mineralisation, generally with overprinting ore mineralogies (Corbett and Leach, 1998 and references therein). Although these workers (Sillitoe and Hedenquist, 2003; Einaudi, 2003) distinguish between deposits containing Zn-rich sphalerite as intermediate sulphidation and Zn-poor sphalerite as low sulphidation (cut off as 20 mole percent FeS), sphalerite composition varies progressively with temperature (described below; Corbett and Leach, 1998) favouring the existing simpler low sulphidation terminology for the carbonate-base metal Au – polymetallic Ag-Au deposits. Epithermal Au deposits extend from shallow crustal levels (<1 km) to near porphyry levels where the low sulphidation quartz-sulphide Au + Cu deposits are transitional to D veins described in the porphyry Cu literature (Gustafson and Hunt, 1975), and so approach mesothermal levels of formation in the original definition of the term (Lindgren, 1922). The term epithermal is therefore herein only included in the names of deposits formed at shallow crustal levels (epithermal quartz Au-Ag and epithermal banded chalcedony-ginguro Au-Ag), and not the quartz-sulphide Au + Cu and carbonate-base metal Au – polymetallic Ag-Ag styles. Low sulphidation epithermal Au-Ag deposits are classified as two end members. The epithermal quartz Au-Ag deposits were defined (Leach and Corbett, 1995; Corbett and Leach, 1998) as the epithermal end member of the intrusion-related series, using mainly southwest Pacific rim examples, and so commonly overprinting quartz-sulphide Au or carbonate-base metal Au mineralisation within magmatic arcs. The epithermal banded chalcedony-ginguro Au-Ag veins (formerly termed epithermal adularia-sericite Au-Ag veins; Corbett and Leach, 1998), predominate as fissure veins formed in dilational structural settings, often in rift environments without obvious associated intrusions, and locally pass downwards to Andean polymetallic Ag-Au veins. The new terminology is more accurately descriptive rather than historical.LOW SULPHIDATION EPITHERMAL AUAs ore fluids responsible for the development of the intrusion-related series of sulphide-rich low sulphidation Au-Ag deposits migrate from intrusion source rocks at depth to higher crustal levels, often entrained within circulating cells of meteoric-dominated waters, they progressively deposit mineralisation classed as: quartz-sulphide Au + Cu, overprinted by carbonate-base metal Au, (including the Andean polymetallic Au-Ag veins), and then later epithermal Au-Ag deposits. Numerous exploration examples display similar paragenetic sequences (Corbett and Leach, 1998).Quartz-sulphide Au + CuQuartz-sulphide Au + Cu deposits contain iron sulphides with a quartz-rich and local barite gangue. Sulphide contents vary from as little as 1% (Chatree, Thailand) to > 50% in lodes (Hamata, Papua New Guinea). They demonstrate pronounced mineral zonation with varying crustal levels of formation. At deepest crustal levels these deposits may contain pyrite, pyrrhotite and chalcopyrite, with lesser specular haematite and magnetite, in a comb or druzy quartz gangue. Slow cooling fluids deposit Au with coarse grained sulphides which generally display good metallurgy, especially where weathered. At elevated crustal settings the pyrite may pass to marcasite and arsenean pyrite, in combination with opal to chalcedony as the silica component. Many high level deposits are therefore characterised by an arsenean pyrite bearing Au-As-Ag anomalous grey silica, commonly termed ‘silica gris’ in Andean deposits, which may display poormetallurgy if Au is encapsulated in the sulphide lattice. Gold is of a high fineness (Corbett and Leach, 1998).Quartz-sulphide Au + Cu deposits at deeper crustal levels tend to exploit pre-existing structures and commonly display a close relationship to porphyry Cu-Au intrusions, locally representing the porphyry-epithermal transition, commonly described as D veins in the early porphyry Cu literature (Gustafson and Hunt, 1975). In dilational structural settings often evidenced by the presence of sheeted veins, ore fluids may migrate considerable distances from source porphyry Cu-Au intrusions to form wall rock porphyry Au deposits. The sheeted veins in some Maricunga Belt, Chile and Cadia, Australia porphyry Au deposits, are typical of quartz-sulphide Au + Cu mineralisation. Quartz-sulphide deposits are well documented in the Southwest Pacific as steep dipping lodes within pre-mineral structures (Mineral Hill and Adelong, Australia; Bilimoia [Irumafimpa], Papua New Guinea; Jaing Cha Ling, China; Rawas, Indonesia), or stockwork and sheeted veins (Nolans, Australia; deeper parts of Porgera, Papua New Guinea and Kelian, Indonesia). Flat dipping structures formed by collapse of volcanic edifices host ore at Emperor Gold Mine, Fiji, and the giant Ladolam deposit Lihir Is, Papua New Guinea. At both these deposits fine variably arsenean pyrite deposited as the ore fluid has rapidly cooled by contact with the wall rocks may display difficult metallurgy. The early low Au grade poor metallurgy sulphide breccias at Sleeper, Nevada are of this style.Much quartz-sulphide Au + Cu mineralisation occurs as small scale veins, reminiscent of D veins marginal to intrusions, commonly in association with magmatic hydrothermal breccias (San Cristobal, Chile; Kidston, Australia), and are frequently worked by small scale miners throughout Latin America. Many weathered bulk low grade ore are amenable to treatment as heap leach operations (Sleeper, San Cristobal). Quartz-sulphide mineralisation occurs as an early stage of polymetallic Ag-Au veins commonly rising to higher levels in quartz-filled structures as ‘silica gris’.Exploration ImplicationsGold is readily liberated from oxidised coarse grained quartz-sulphide Au + Cu ores and so very low metal grades may be worked as bulk low grade heap leach operations (San Cristobal, Sleeper). However, explorationists should be aware that quartz-sulphide Au deposits are notorious for surficial supergene Au enrichment, particularly in steeply dipping structures as sites of chemical and mechanical concentration and so surficial elevated assay results should be treated with caution. Supergene settings are evidenced by box works after pyrite, or Au anomalous jarosite at the surface, base of oxidation and collapsing down structures.Fine grained As-rich ores (Sleeper, Lihir), formed by fluid quenching display poor metallurgy, and high As contents in these ores may prove to be an environmental liability. However, this mineralisation which occurs as ‘silica gris’ may be used as a vector to buried polymetallic Ag-Au ores in Andean settings where extreme topographic variations allow access to much deeper levels in outcropping veins.Higher hypogene grade ores are recognised in settings of fluid quenching, either by wall rock reaction, or by mixing with varying ground waters as evidenced by kaolin (low pH waters), or more commonly manganese oxide (bicarbonate waters), as a reflection of the transition to higher crustal level carbonate-base metal Au mineralisation. Overprintingepithermal quartz Au-Ag mineralisation also provides higher Au-Ag grades (Sleeper, Emperor, Ladolam).Carbonate-base metal Au – Polymetallic Ag-AuWhile carbonate-base metal Au deposits are some of the most prolific epithermal Au producers in the southwest Pacific rim (Porgera; Kelian; Antamok, Phillipines), polymetallic Ag-Au vein systems have provided much of the world’s Ag since the Spanish colonial era, particularly in Peru and Mexico.Carbonate-base metal Au deposits are characterised by 1-10% sulphides, commonly as pyrite > sphalerite > galena with a gangue of carbonate and variable quartz and display pronounced zonation (Corbett and Leach, 1998), and commonly overprint lower Au grade quartz-sulphide mineralisation. At deeper levels the transition to quartz-sulphide style may be reflected by minor pyrrhotite (Porgera, Kelian). A zonation in sphalerite type is evident as a composition-controlled colour change related to temperature (depth), varying from black, Fe>Zn, high temperature at depth, through brown, red, yellow and locally clear, Zn>Fe, low temperature sphalerite, formed at highest crustal levels. Carbonates are zoned as the collapsing weakly acidic bicarbonate fluids undergo a progressive rise in pH with depth by wall rock reaction, and so vary with increasing depth from carbonates dominated by Fe (siderite) at higher crustal levels, to Mn (rhodochrosite), Mg (ankerite, dolomite) at intermediate levels, and Ca (calcite) at deepest crustal levels. Much of the mineral deposition results from the mixing of rising ore fluids with bicarbonate waters, often derived from high level felsic intrusions.Many carbonate-base metal Au deposits contain early quartz-sulphide mineralisation while others evolve to host bonanza Au grade epithermal mineralisation. Settings vary from fissure veins (Acupan & Antamok, Philippines; Cikotok and Pongkor, Indonesia), which may become quartz-rich (Misima, Papua New Guinea), to fracture/breccia networks adjacent to intrusions (Porgera), brecciated intrusion margins (Bulawan, Philippines) or controlled by structures (Hidden Valley, Papua New Guinea; Lake Cowal, Australia). At higher crustal levels fracture mineralisation occurs in competent host rocks adjacent to diatreme breccias (Kelian) varying to fracture (Cripple Creek, USA) and breccia matrix fill at deeper portions of diatreme breccia pipes (Montana Tunnels, USA; Mt Leyshon, Australia; Rosa Montana, Romania). In older more deeply eroded terranes such as the Ordovician Lachlan Fold Belt of eastern Australia, quartz-sulphide Au systems attain economic status due to the overprinting carbonate-base metal Au mineralisation (Kidston, Lake Cowal and London-Victoria in Australia). Carbonate-base metal deposits display more efficient mechanisms of Au deposition than the quartz sulphide and so commonly display higher precious metal grades.Polymetallic Ag-Au veins are distinguished from carbonate-base metal deposits by the generally fissure vein character with local high sulphide contents and elevated Ag contents in Andean magmatic arcs, with variable to abundant quartz. Host rock competency provides a strong influence upon vein character and it is common in volcanic sequences for some units such as lava flows to contain well mineralised veins, while interlayered incompetent lapilli tuffs will be unmineralised. Most deposits occur as fissure veins within extensional settings characterised by listric style faults. Ore shoots which host wider and higher precious metal grade vein portions occur in flexures formed as variations in the vein strike and steeper vein portions. These latter ore shoots and others developed by fluid mixing at intersections of hanging wall splays with normal faults, may be blind at the surface. As with carbonate-base metal Au deposits, polymetallic Ag veindeposits are commonly associated with felsic domes and locally extensive illite-chlorite-pyrite wall rock alteration.Polymetallic Ag veins contain early low precious metal grade quartz-sulphide mineralisation and display similar zonation to carbonate-base metal deposits, although rhodonite locally occurs in addition to the normal rhodochrosite. Deeper veins may contain pyrite, pyrrhotite, chalcopyrite and dark sphalerite, while higher level veins may contain early arsenean pyrite as ‘silica gris’, pale sphalerite, and chalcedonic to opaline silica, with minor stibnite. The mineralisation style and mechanism of metal deposition contribute towards elevated (local bonanza) Ag grades common in association with Ag- rich tetrahedrite (freigbergite), and argentite and other Ag minerals at elevated crustal settings. As some higher level polymetallic veins become flooded by banded silica in dilatant structural settings, this latter material may take on the appearance ginguro bands, and so provide a transition low sulphidation epithermal banded chalcedony-ginguro Au-Ag veins. Elevated Ag-Au grades may result from rapid cooling of ore fluids as an efficient mechanism of precious metal deposition, commonly at elevated crustal settings as evidenced by the presence of opal. The mixing of rising ore fluids with collapsing low pH condensate waters, which also account for development of surficial acid sulphate (cristobalite, kaolinite, alunite) caps, also represents an efficient mechanism of Au deposition, evidenced by hypogene kaolin within the bonanza Au-Ag ore mineral assemblage (Arcata, Peru; Palmarejo, Mexico).While in many instances carbonate-base metal Au deposits occur in the same terranes as high sulphidation deposits (Rio de Medio at El Indio, Chile; Victoria at Lepanto, Philippines), it is also possible, but only rarely noted, for the fluids responsible for the formation of high sulphidation Au-Ag deposits to undergo progressive cooling and neutralisation by rock reaction to evolve through intermediate to lower sulphidation mineralisation (below).Exploration ImplicationsThe size of fissure veins which host polymetallic Ag-Au mineralisation and precious metal grades are influenced by rock competency, the presence of dilational structures to focus fluid flow, the mechanism of mineral deposition, and style of epithermal mineralisation. Elevated epithermal portions of polymetallic Ag-Au veins display bonanza Ag-Au grades where they pass to an epithermal character characterised by argentite with opal, locally with a ginguro appearance, while deep level veins tend to be more poorly mineralised. In elevated vein portions mixing with collapsing low pH condensate waters may enhance precious metal values, as evidence by the presence of hypogene kaolin.Although carbonate-base metal Au deposits are important Au producers in the western Pacific rim, explorationists should be aware that these deposits may display considerable internal mineralogical variation resulting in highly irregular precious metal grades and variable metallurgical characteristics (Kelian, Porgera). While both carbonate base metal and polymetallic deposit styles are associated with felsic domes, phreatomagmatic (diatreme) breccias are a common component of carbonate base metal systems such that breccia pipes may be barren at surface but host Au mineralisation in the fractures adjacent country rocks at that level, or within the breccia matrix at depth.Explorationists may prefer to prospect carbonate base-metal and polymetallic Au-Ag veins formed at higher crustal levels, as evidenced by pale sphalerite or opal, whichprovide potential to evolve to epithermal Au-Ag mineralisation which may host bonanza Au-Ag grades. The mixing of collapsing low Ph waters from acid sulphate caps, as evidenced by kaolin in the ore assemblage, provides an efficient mechanism of Au-Ag deposition for bonanza ore formation. Ore shoots formed in dilatant structural settings (flexures, hanging wall splays) host higher Au-Ag grades and wider veins and so represent favourable exploration targets. The characteristic Mn wad formed by weathering of Mn carbonates provides a ready indication of this mineralisation style where it overprints lower Ag grade quartz-sulphide deposits.Low sulphidation epithermal quartz Au-AgEpithermal quartz Au-Ag deposits form at the highest crustal levels and late stage in the paragenetic sequence of intrusion-related low sulphidation Au deposits and so typically overprint quartz-sulphide Au + Cu (Ladolam, Emperor, Sleeper), or carbonate-base metal Au (Porgera Zone VII; Mt Kare, Papua New Guinea) deposits and may also occur marginal to porphyry Cu-Au deposits (Thames, New Zealand). Bonanza quartz veins at Selene, Peru are also of the epithermal quartz Au-Ag style. Although not common, it is possible for fluids responsible for the development of high sulphidation mineralisation to evolve to lower sulphidation as recognised recognised at the Wafi, Papua New Guinea (Leach, 1999) and Viento veins, El Indio district. Some workers have speculated that the bonanza Au at El Indio is of a lower sulphidation style which overprints the high sulphidation Cu-rich mineralisation. The strongest association appears to be overprinting quartz-sulphide style mineralisation where bonanza mineralisation was mined from overprinting quartz-Au veins (Sleeper, Emperor, Lihir, Bilimoia; Chatree, Thailand). Epithermal quartz Au-Ag mineralisation is characterised by the presence of free Au with minor gangue, typically quartz and minor clay. Sulphide contents are commonly <1% typically as minor pyrite/marcasite although tellurides are well developed in some projects. Gold is commonly of a high fineness and Ag minerals are rare. The vanadium mica, roscoelite, occurs at Porgera, Mt Kare and Emperor, tellurides at Emperor and tellurobismuthinite at Bilimoia. Most display a strong structural control as they form at great distances from the magma source, and bonanza Au deposition is considered (Corbett and Leach, 1998) to result from the rapid cooling of the ore fluid, locally by mixing with oxygenated or low pH ground waters. Consequently, some deposits (Sleeper) formed by the mixing of mineralised fluids with collapsing low pH acid waters feature abundant kaolin with the quartz-Au veins. The banded quartz at Sleeper supports a polyphasal activation of the dilatant structural setting so that multiple mineralising events contribute towards the spectacular bonanza Au grades. High grade ores may occur in ore shoots developed at sites of preferential fluid mixing, such as the blind Porgera, Zone VII mineralisation.Recent work (Corbett, 2004) at Porgera suggests that thrust erosion initiated renewed felsic magmatism and the epithermal quartz-roscoelite-Au event, which produced substantial bonanza Au from Zone VII, overprints much deeper quartz-sulphide and carbonate-base metal mineralisation in which the dark sphalerite and pyrrhotite are indicative of formation at elevated temperatures and hence deep crustal levels. Exploration ImplicationsThe free milling nature of bonanza Au has led to the ready identification of many epithermal quartz Au-Ag deposits by panning (Porgera; Edie Creek, Papua New Guinea), but may also promote the presence of artisan miners (Mt Kare, Kelian). The improved metallurgy and higher precious metal grades within epithermal quartz Au-Agmineralisation have enhanced the economics of otherwise lower Au grade or metallurgically difficult quartz-sulphide Au and carbonate-base metal Au deposits (Sleeper, Porgera, Emperor). As Au grades within narrow gangue-poor fracture/veins are extremely irregular, great care must be exercised in the drill testing of these deposits to ensure that vein ores are intersected at the best possible angles, and maintenance of good core recoveries is essential within mineralised fault zones. A geologist should mark where core should be sawn and sampled to ensure best possible assay returns. The bonanza Au grades, commonly with only minor gangue minerals, are difficult to recognise and so may provide challenges in ore reserve determinations. Explorationists must also be aware that most ore and higher precious metal grades commonly occur in ore shoots formed as dilatant structural sites (flexures or fault jogs) of enhanced fluid flow (Porgera Zone VII), and preferential metal deposition (at cross structures [Thames] & hanging wall splays [Porgera Zone VII], and many of these settings may be blind at the surface.Epithermal banded chalcedony-ginguro Au-Ag mineralisationThe low sulphidation epithermal banded chalcedony-ginguro Au-Ag deposits have formerly been termed adularia-sericite banded epithermal Au-Ag quartz veins (Corbett and Leach, 1998). The more descriptive term is now used in response to comments from explorationists that adularia is not always present and illite wall rock alteration is more common than sericite, which dominates at deeper crustal levels. These deposits are the most extensively documented low sulphidation Au-Ag deposits, particularly using the parallels with the New Zealand geothermal systems. While many occur in back arc environments (Drummond Basin, Australia; Taupo Volcanic Zone, New Zealand; Argentine Patagonia; Japan; western US), or some are noted within intra-arc rifts (Tolukuma, Papua New Guinea), other individual deposits occur within magmatic arcs (El Peñon, Chile; Ares, Peru), or other linear magmatic arcs are dominated by these deposits (Coromandel Peninsula, New Zealand; Kamchatka Peninsula, Eastern Russia). This style of mineralisation is also recognised in the mid oceanic ridge hotspot environment at Iceland (Thormodsdalur vein). All these environments display characteristic of bimodal volcanism, evident as the association of Au-Ag mineralisation with felsic magmatism, although hosted rock sequences which contain andesitic or basaltic volcanism.The low sulphidation epithermal banded chalcedony-ginguro Au-Ag veins typically comprise fine interlayers of chalcedony varying to opal, with lesser adularia, quartz pseudomorphing platy calcite, and black sulphidic ginguro bands which may contain electrum, Ag sulphosalts and Au and were named by the nineteenth century Japanese miners. Sulphide contents which are generally less than 1% electrum, silver sulphosalts pyrite/marcasite, minor chalcopyrite, and rare sphalerite, galena etc. Comparisons with geothermal systems aid existing interpretations that meteoric dominant waters rise rapidly up dilatant fracture systems hosted within competent rock packages and boil to deposit much of the vein mineralogy such as adularia, quartz pseudomorphing platy calcite and possibly chalcedony. However, these mineral assemblages tend not to contain Au-Ag mineralisation, which dominates in the ginguro bands and to a lesser extent chalcedony. Some workers (Corbett and Leach, 1998) therefore invoke rapid cooling, locally aided by mixing of the ore fluid with varying ground waters, as a mechanism for deposition of bonanza Au-Ag mineralisation. Fluid mixing is evidenced by the presence within the ore assemblage of kaolin for low pH acid sulphate waters, hypogene haematite and jarosite for oxygenated waters and Mn oxide for bicarbonate waters.。

相关文档
最新文档