SPP03N60S5中文资料

Cool MOS™ Power TransistorV DS 600V R DS(on) 1.4ΩI D3.2AFeature• New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme d v /d t rated• Ultra low effective capacitances •Improved transconductanceType Package Ordering CodeSPP03N60S5P-TO220-3-1Q67040-S4184SPB03N60S5P-TO263-3-2Q67040-S4197Marking 03N60S503N60S5Maximum Ratings ParameterSymbol Value Unit Continuous drain current T C = 25 °C T C = 100 °CI D3.22APulsed drain current, t p limited by T jmax I D puls 5.7Avalanche energy, single pulse I D = 2.4 A, V DD = 50 VE AS100mJAvalanche energy, repetitive t AR limited by T jmax 1)I D = 3.2 A, V DD = 50 VE AR 0.2Avalanche current, repetitive t AR limited by T jmax I AR 3.2A Gate source voltage V GS ±20V Gate source voltage AC (f >1Hz)V GS ±30Power dissipation, T C = 25°CP tot 38W Operating and storage temperatureT j , T stg-55... +150°CMaximum RatingsParameter Symbol Value Unit Drain Source voltage slopeV DS = 480 V, I D = 3.2 A, T j = 125 °Cd v/d t20V/nsThermal CharacteristicsParameter Symbol Values Unitmin.typ.max. Thermal resistance, junction - case R thJC -- 3.3K/W Thermal resistance, junction - ambient, leaded R thJA--62SMD version, device on PCB: @ min. footprint@ 6 cm2 cooling area 2)R thJA---3562-Soldering temperature,1.6 mm (0.063 in.) from case for 10s3)T sold --260°CElectrical Characteristics, at T j=25°C unless otherwise specifiedParameter Symbol Conditions Values Unitmin.typ.max.Drain-source breakdown voltage V(BR)DSS V GS=0V, I D=0.25mA600--V Drain-Source avalanchebreakdown voltageV(BR)DS V GS=0V, I D=3.2A-700-Gate threshold voltage V GS(th)I D=135µΑ, V GS=V DS 3.5 4.5 5.5Zero gate voltage drain current I DSS V DS=600V, V GS=0V,T j=25°C, T j=150°C --0.5-170µAGate-source leakage current I GSS V GS=20V, V DS=0V--100nA Drain-source on-state resistance R DS(on)V GS=10V, I D=2A,T j=25°C T j=150°C --1.263.41.4-ΩElectrical Characteristics , at T j = 25 °C, unless otherwise specifiedParameter Symbol Conditions Values Unitmin.typ.max. CharacteristicsTransconductance g fs V DS≥2*I D*R DS(on)max,I D=2A- 1.8-SInput capacitance C iss V GS=0V, V DS=25V,f=1MHz -420-pFOutput capacitance C oss-150-Reverse transfer capacitance C rss- 3.6-Turn-on delay time t d(on)V DD=350V, V GS=0/10V,I D=3.2A, R G=20Ω-35nsRise time t r-25-Turn-off delay time t d(off)-40Fall time t f-1522.5Gate Charge CharacteristicsGate to source charge Q gs V DD=350V, I D=3.2A- 3.5-nC Gate to drain charge Q gd-7-Gate charge total Q g V DD=350V, I D=3.2A,V GS=0 to 10V-12.416Gate plateau voltage V(plateau)V DD=350V, I D=3.2A-8-V1Repetitve avalanche causes additional power losses that can be calculated as PAV=E AR*f.2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.3Soldering temperature for TO-263: 220°C, reflowElectrical Characteristics, at T j = 25 °C, unless otherwise specifiedParameter Symbol Conditions Values Unitmin.typ.max. Inverse diode continuousforward currentI S T C=25°C-- 3.2AInverse diode direct current,pulsedI SM-- 5.7 Inverse diode forward voltage V SD V GS=0V, I F=I S-1 1.2VReverse recovery time t rr V R=350V, I F=I S ,d i F/d t=100A/µs -10001700nsReverse recovery charge Q rr- 2.3-µCTypical Transient Thermal CharacteristicsSymbol Value Unit Symbol Value Unittyp.typ.Thermal resistanceR th10.054K/W R th20.103R th30.178R th40.757R th50.682R th60.202Thermal capacitanceC th10.00005232Ws/K C th20.0002034C th30.0002963C th40.0009103C th50.002084C th60.0241 Power dissipation P tot = f (T C)Ptot2 Safe operating areaI D = f ( V DS )parameter : D = 0 , T C=25°C3ID3 Transient thermal impedanceZthJC = f (t p)parameter: D = t p/T10101010K/WZthJC4 Typ. output characteristicI D = f (V DS); T j=25°Cparameter: t p = 10 µs, V GSID5 Drain-source on-state resistance R DS(on) = f (T j)parameter : I= 2 A, V = 10 VRDS(on)6 Typ. transfer characteristicsI D= f (V GS ); V DS≥ 2 x I D x R DS(on)maxparameter: t p = 10 µsID7 Typ. gate chargeV GS= f (Q Gate)parameter: I= 3.2 A pulsedVGS8 Forward characteristics of body diodeI F = f (V SD)parameter: T, t p = 10 µsIF9 Avalanche SOAI AR = f (t AR )par.: T j ≤ 150 °C4I A R10 Avalanche energyE AS = f (T j )par.: I D = 2.4 A, V DD = 50 VE 11 Drain-source breakdown voltage V (BR)DSS= f (T j )SPP03N60S5V (B R )D SS12 Typ. capacitancesC = f (V DS )parameter: V GS =0V,f =1 MHzCDefinition of diodes switching characteristicsP-TO-220-3-1All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3P-TO-263-3-2 (D2-PAK)Published byInfineon Technologies AG,Bereichs KommunikationSt.-Martin-Strasse 53,D-81541 München© Infineon Technologies AG 1999All Rights Reserved.Attention please!The information herein is given to describe certain components and shall not be considered as warranted characteristics.Terms of delivery and rights to technical change reserved.We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.Infineon Technologies is an approved CECC manufacturer.InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). WarningsDue to technical requirements components may contain dangerous substances.For information on the types in question please contact your nearest Infineon Technologies Office.Infineon Technologies Components may only be used in life-support devices or systems with the expresswritten approval of Infineon Technologies, if a failure of such components can reasonably be expected tocause the failure of that life-support device or system, or to affect the safety or effectiveness of that deviceor system Life support devices or systems are intended to be implanted in the human body, or to supportand/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the healthof the user or other persons may be endangered.。