Neutron channelling in a magnetic tube trap
Quantum spin liquid emerging in 2D correlated Dirac fermions

智能芯片到脑子里去,英语作文

智能芯片到脑子里去,英语作文The Next Frontier: Neurobionics and the Integration of Intelligent Chips in the Human Brain.The human brain, a marvel of biological complexity, has captivated the imaginations of scientists, philosophers, and dreamers throughout history. Its intricate network of neurons, billions upon billions in number, orchestrates the symphony of our thoughts, emotions, and behaviors. For centuries, we have sought to understand the secrets thatlie within its unfathomable depths.In recent decades, technological advancements have propelled us to the cusp of a remarkable era in neuroscience. The advent of neurobionics, a field that seamlessly blends neurology with cutting-edge engineering, has opened up unprecedented possibilities for enhancing human capabilities and alleviating neurological ailments. A particularly captivating prospect within this realm is the integration of intelligent chips directly into the humanbrain.Envision a scenario where a minuscule, yet potent, microchip is implanted into the brain. This chip, equipped with sophisticated algorithms and advanced connectivity, would possess the remarkable ability to monitor neural activity in real-time, analyze patterns, and respond with targeted interventions. Such a device could revolutionize our approaches to a wide spectrum of neurological conditions.One such condition, epilepsy, characterized by recurrent seizures, affects millions worldwide. Current treatment modalities, often involving anticonvulsant medications, can be challenging to manage and may come with undesirable side effects. The integration of intelligent chips could provide a more effective and personalized approach. By monitoring brain activity continuously, the chip could detect the onset of seizures and deliver precisely timed electrical impulses or pharmacological interventions to prevent or mitigate them.Similarly, neurodegenerative diseases such as Alzheimer's and Parkinson's could potentially benefit from this technology. These debilitating conditions arise from the progressive loss of neurons, leading to cognitive impairment, movement disorders, and a decline in overall quality of life. Intelligent chips could be employed to compensate for neuronal loss by stimulating specific brain areas or intervening to slow down disease progression.The potential applications of intelligent chips in the human brain extend far beyond the realm of clinical medicine. As our understanding of neural circuits continues to expand, the possibility of augmenting human cognition and sensory perception becomes tantalizingly close. By enhancing neural processing and providing real-time feedback, chips could facilitate accelerated learning, improved memory function, and heightened sensory acuity.For instance, individuals with visual impairments could benefit from chips that amplify neural signals in thevisual cortex, enhancing their ability to perceive objects and navigate their surroundings. Similarly, chips implantedin the auditory cortex could restore hearing in those with hearing loss.The integration of intelligent chips into the human brain also presents a path towards a deeper understanding of ourselves. By providing a window into the intricate workings of the mind, chips could facilitate real-time analysis of neural activity, shedding light on the neural underpinnings of consciousness, decision-making, and emotional experiences.However, it is crucial to acknowledge that the pursuit of neurobionics comes with a myriad of ethical, social, and safety considerations that must be carefully weighed. The implantation of foreign devices into the human body raises concerns about potential risks and long-term complications. Ethical guidelines must be established to ensure that neurobionics is employed for the benefit of humanity, not to the detriment of individuals or society.As we navigate the uncharted waters of neurobionics, international collaboration and interdisciplinary researchwill be paramount. Scientists, engineers, ethicists, and policymakers must work hand-in-hand to establish clear frameworks for the responsible development and clinical application of intelligent chips in the human brain.The integration of intelligent chips into the human brain holds the promise of transformative advancements in healthcare, human enhancement, and our understanding of the human condition. By embracing a thoughtful and inclusive approach, we can harness the power of neurobionics to elevate human potential and pave the way for a brighter, more fulfilling future for all.。
史上最全石油英语词汇

史上最全石油英语词汇(A~C)Aabandoned oil & gas 报废油气井abnormal formation pressure 异常地层压力above ground equipment 地面设备abscissa 横坐标absorbent formation 渗透地层absorption well 漏失井armoured cable 铠装电缆accessory , accessories, accessary附件,辅助的acceptance criteria 验收标准acceptance of risks 承担风险acceptance of the bid 中标accident analysis 事故分析accident free 无事故accident potential 事故隐患accident prevention 事故预防acid fracturing 酸化压裂acid job 酸化作业acid-frac process 酸化压裂工艺acid stimulation酸化增产actual data 实测资料actual data plot 实测曲线actuating system 传动系统assistant driller 副司钻adapter substitute 转换接头,大小头addendum 附录additional well 补充井adjacent well 邻井adjustment well 调整井adjust to zero 调零adjuster sub 调整短节adapter 适配器,接头automatic fine tuning 自动微调after-sale service 售后服务,后续服务after-treatment profile log 油井(增产)措施后生产剖面测井hole azimuth 井斜方向AL(acoustic logging)声波测井acoustic amplitude log,amplitude log声幅测井adjacent bed 围岩apparent resistivity视电阻率ACBL(acoustic cement bond log)声波水泥胶结测井activation logging活化测井ASC(after survey calibration)测后刻度amplitude type cement bond log声幅水泥胶结测井annular space log环空测井array sonic tool阵列声波测井仪acoustic wavetrain logging声波全波列测井alemite gun 黄油枪alligator wrench 活动管钳alternator 交流发电机A-mast A形井架amplifier 放大器amplitude 振幅,声波幅度annulus(油套管)环形空间analog cable signal 模拟电缆信号anchor packer 卡瓦封隔器annual survey 年检annular blowout preventer环形防喷器annular pressure 环空压力annular pressure operated test valve环空压力控制测试阀annular reversing valve环空加压反循环阀annular space 环形空间annular water detector环空找水仪annular water injection反注,环空注入annulus blow out 环空井喷annulus completion fluid 环空完井液annulus (flow)line 环空(出油)管annulus fluid环空液体annulus logging环空测试annulus pack off环空封隔装置annulus pressure firing system环空压力起爆器annulus pressure response tool APR工具,(哈里伯顿)环空加压式测试阀annulus sample catcher环空取样器anticline背斜antiknock agent 防爆剂antivibration防震,抗震API pup joint API标准油管短节apparent wellbore radius有效井筒半径appraisal well 评价井aqueous saturation 含水饱和度APR(annulus pressure respondent)环空压力控制式测试工具area operations superintendent 地区作业监督armoured (electric) cable 铠装电缆artificial bottom hole 人工井底artificial fracture 人造裂缝artificial lift 机械采油assessment of bids 评标assessment well评价井assistant driller 副司钻assistant engineer助理工程师associated gas 伴生气assurance factor安全系数atmospheric service常压作业autocartograph 自动绘图仪autoignition自动点火AVL(acoustic velocity log )声速测井azimuth 井斜方位Bbit 钻头,刀片box 母扣,母接头block区块,滑轮车,断快back flow反循环洗井backup arm 推靠臂backup copy 副本bad earth 接地不良bail 提环,提捞back off 倒扣,解卡bailer捞砂筒bailing 提捞作业bailing bucket 提捞筒bar drop投棒bar drop sub 投杆接头,撞击接头barefoot completion 裸眼完井barefoot interval 裸眼井段barefoot well(bare hole)裸眼井bar fishing 打捞点火棒bar hydrostatic firing head 投棒压力起爆器basement rock基岩bastard connection 不合格的丝扣(接头)bastard thread不合格的丝扣behind completion date没有按期完工bit diameter钻头直径breakdown pressure 临界压力bailed dry (把井)掏空beam pumping unit 游梁式抽油机beam well (深井泵)抽油井bean up 放喷bed of interest 目的层bellmouth喇叭口,锥形孔belly band 安全带bell nipple喇叭口短节bottom hole fluid sampler井底流体取样器bottom hole assembly 底部管柱结构BHC(borehole compensated sonic log )井眼补偿声波测井background radiation放射性本底植banana plug香蕉插头before calibration测前刻度BHTV(borehole televiewer)井下(声波)电视borehole fluid sampler井眼流体取样器bridle马笼头bradenhead flange 井口法兰bottom hole 井底,井下big hole perforator大孔眼射孔器borehole status井眼状况bottom-hole pressure ,closed井底关井压力bottom-hole pressure,flowing井底流动压力bottom-hole sample 井底取样,井下取样bottom hole sampler井底取样器bid bond投标保证金,投标保证书bidder 投标者bidding投标bidding documents投标文件,招标文件bidding procedure 投标程序bid opening开标big-entry-hole大射孔孔眼big-frac treatment(多层段)大型压裂big repair大修bill of materials材料清单bit hook打捞工具blank footage枪接头盲区blank off 油层封住,封堵blank tubing空油管,盲枪blasting cap 起爆雷管bleeding off pressure 放压block and tackle arrangement起下用滑车系统block diagram方框图,结构图block-squeeze分段挤水泥blowdown放压,衰竭式开采blowing out井喷blowing well自喷井blowout capping 控制井喷blowout hookup(井口)防喷装置blowout preventer 防喷器blank plug 丝堵,堵头blowout-prevention equipment防喷设备blowout-prevention procedure防喷措施bullets射孔弹blue sky exploratory well预探井bumper减震器back out(break out)卸开,松扣bobtail packer裸眼井测试封隔器bonding cable 接地电缆,地线booster传爆管bore diameter孔径,井眼直径bore frame井身结构borehole correction井眼校正borehole deviation井斜borehole effect井眼效应borehole face井壁borehole log 测井曲线,录井图borehole operation井下作业borehole pressure井筒压力borehole survey井下测量borehole wall井壁boring casing套管borings岩屑boring tower井架bottom hole turbine flowmeter井下涡轮流量计bottom nose (下井仪)尾端,(射孔)枪尾bottom-up firing枪尾起爆器box and pin公母接头box coupling接箍bridge plug桥塞by-pass旁通brake handle刹把breakdown 故障,事故break off pin type circulating sub断销式反循环阀breaking out pipe卸扣bridge plugging(打)桥塞封堵bridge the hole (在井中)打桥塞bring in a well完井投产bring out production投产,进行开采broken down 解堵brought in well投产井button switch按钮开关bushing 套筒basket 打捞篮,水泥伞bottomed 下到井底borehole televiewer井下电视buffer减震器build up压力恢复bubble 气泡,水泡bubble head泡泡头bubble point pressure饱和压力bucket rod抽油杆buck up紧扣build up of fluid液面恢复build the pressure打压build up of pressure压力恢复bull dog wrench管钳bullet gun射孔枪bullet hole射孔孔眼bumper spring 减震器弹簧burr毛刺,去毛刺by-pass pipe旁通管Ccontractor承包商C&F (cost and freight)成本加运费价,到岸价cement in place注水泥完毕cabin操作室cable armour电缆外皮cable bond(joint)电缆接头cable conductor缆芯cable configuration电缆规格cable continuity电缆通断情况cable core缆芯cable drum(reel)电缆滚筒cable duct 电缆槽cable fishing tool顿钻打捞工具cable formation test电缆地层测试cable head电缆头cable kinking电缆扭结cable-laid rope钢丝绳cable loop绳扣cable oil电缆油cable ringing电缆打结cable slack电缆松弛cable winch(work) 电缆绞车contract award date合同签定日期cake泥饼caliper井径仪calibration标定,调试,刻度calibrated标定过的calibrating jig刻度架caliper logging井径测量calling of bids招标callow表层camp equipment野外作业设备camp site施工现场cap rock盖层cap 雷管capping bed,cap formation盖层carbonate rock碳酸盐岩cased hole套管井cased hole completion 下套管完井cased hole formation tester套管井地层测试器case in 下套管cased well下套管井casing(case pipe)套管casing/cementation report套管固井报告casing cementing套管注水泥casing collar(coupling) 套管接箍CCL(casing collar locator)套管接箍测井casing grade套管钢级casing gun 电缆输送套管射孔枪casing head spool套管头四通casingless completion 无套管完井casing list 套管记录casing over pressure套管加压,环空加压casing packer套管封隔器casing perforation(套管)射孔casing perforation operator射孔作业工casing perforation service射孔作业casing perforation tool射孔器材casing perforation type射孔方式casing point下套管深度casing program套管程序casing setting depth套管下入深度casing shoe套管鞋casing top spacing套补距casing-tubing annulus油套环空casing wear套管损坏caution sign警告标志cave-in井壁坍塌core barrel取芯筒CBL(cement bond logging)水泥胶结测井carbon/oxygen logging碳氧比测井carbon/oxygen spectral logging 碳氧比能谱测井casing caliper log 套管内径测井casing inspection log套管探伤测井CBIL(circumferential borehole imaging logging system)环形井眼成象测井系统CET(cement evaluation tool)水泥评价测井channelling窜槽channelling detection找窜check shots检验地震测井completion date 完井日期cellar井口cellar connection(钻井)井口装置cemented to水泥返至cementing documentation固井设计cementing truck水泥车cement job quality固井质量cement sheath水泥环cement squeeze挤水泥cement top水泥返高centering device扶正器casing fluid level套管液面深度channel(射孔)孔道,管道,途径change over变扣接头change over sub大小头charge射孔弹,费用charge penetration射孔弹穿透深度charge strip(射孔)弹架charge type(射孔)弹型chief operator主操Chinese side中方christmas tree采油树christmas tree gauge井口压力表contract item合同条款casing inside diameter套管内径cement in place固井作业结束closed-in pressure关井压力circuit tester万用表clay 粘土caliper log井径测井claim 索赔claimer索赔人claim for breaking an agreement 违约赔偿claim for payment 要求付款claim indemnity索赔claim rejection拒赔claystone粘土岩,泥岩clean out (清砂、清蜡)修井clean-out of well 洗井clean-out operation(service)洗井作业clean-out report修井报告clear working place安全工作区clip绳卡closed-in关井closed-in well关闭井,停产井closed-in casing pressure关井套管压力closed-in tubing pressure关井油管压力cementer固井公司,固井队工人condensate凝析油coarse adjustment(control)粗调coarse -thread joint 粗扣接头change of contract合同变更casing outside diameter套管外径coiled rod 连续抽油杆coiled tubing连续油管,小油管coiled tubing service连续油管作业coiled tubing unit连续油管作业机coiled tubing operation小油管作业collar接箍,法兰盘,井口,钻铤collared hole下了表层套管的井combination collar(coupling)转换接箍combination tool组合下井仪commercial accumulation(deposit)有开采价值的油气藏commercial bed有开采价值的油气层commercial field有开采价值的油气田commingling production多层合采commissioning trial试用投产communication窜槽communication between zones窜层compensated density log补偿密度测井CDNT(compensated density-neutron tool)补偿地层密度中子测井仪compensated formation densilog补偿地层密度测井CNL(compensated neutron log)补偿中子测井compensated sonic log补偿声波测井conductivity log电导率测井conglomerate砾岩completion damage完井污染completion date完井日期completion evaluation完井评价completion fluid完井液completion operation 完井作业completion perforating完井射孔completion well test完井测试completion factor完井指数completion interval完井层段completion string完井管柱condensate field凝析气田condensate pool凝析油藏condensate well凝析油气井conductor line 导线conductor wire缆芯线connection end接头consent 插座console面板constant maintenance定期保养consumable material消耗材料consumable accessories耗损件contact probe探头contact sonde(井下仪器的)探头container horizon(rock)含油层,储集层contamination污染continental shelf大陆架contingency意外情况contingency plan(procedures)应急措施contract area合同区contract award date 合同签定日期contract duration合同期限contracted block合同区contracted construction承包施工contract life合同有效期限contract(or)employee施工人员contract item合同条款contributing zone生产层control fluid压井液controlled directional well定向井control of well kick and blowout井涌井喷控制control panel remote遥控面板conventional DST常规地层测试conventional gun普通射孔器conventional operation常规作业conventional overbalanced perforating 常规正压射孔conventional pumping unit普通抽油机conventional well常规井conventional workover rig常规修井作业core barrel岩心筒core bit取心钻头CST(core sample taker)井壁取心器cored well取心井coupled tubing油管立柱coupling tubing connection油管接箍连接cement plug水泥塞casing pressure-closed关井套压casing pressure-flowing开井套压combination production logging组合测井crystal quartz gauge石英晶体压力crab(winch,crane)吊车,起重机crown block天车crooked stem 弯曲的管柱cross over短节,变扣接头cross over circulation 反循环cross over sub(joint)变扣接头,转换接头crowbar 撬杠crown platform天车平台CST(chronological sample taker,chronological sidewall core tool)井壁取心器cartage运费complete trip in hole 完成(仪器)下井作业cable telemetry system电缆遥测系统cable transmission system电缆传输系统current maintenance 日常维修cushion 液垫,测试垫customs海关,关税cut-off date截止日期Ddrilling and production platform钻井采油平台drift angle(定向井)倾角data acquisition equipment数据采集装置daily capacity(output,production,rate)日产量daily servicing日常维护damaged formation受污染地层damaged well污染井damaged well productivity污染井产能damaged zone污染带damaged factor污染系数damage skin 损害表皮damper减震器damping spring减震弹簧data readback数据回放day to day operation日常业务drill collar钻铤dead time 停工时间dead well停产井dead work 准备工作,非生产性工作decenter 偏心decentralized casing 偏心套管decentralized gun偏心射孔器decentralized wellhead偏心井口decentralizing device偏心装置decline factor递减系数decline rate 递减速度decline exponent递减系数deep penetrating gun深穿透射孔枪deep penetration charge 深穿透射孔弹deep penetrator深井射孔弹ILD(deep induction log),deep investigation induction log深感应测井LLD(deep laterolog)深侧向测井depth mark of cable电缆深度记号Dewar flask,Dewar thermos bottle测井保温瓶default clause违约条款defective casing/liner cementation固井不合格defective insulation绝缘不良deficient well低效井deflected hole(well)斜井,定向井degree of damage污染程度degree of dip倾角degree of reserve recovery采出程度degree of saturation饱和度dehydrated crude脱水原油deliverability产能,产油delivery point供应点demodulator检波器demobilization复员,遣散demobilization cost遣散费demonstrated reserves探明储量demurrage charge(fee)延迟费density log密度测井deparaffin清蜡depleted field枯竭油田depleted oil sand枯竭油层depth in下入深度depreciation charge折旧费depth correction校深depth discrepancy深度误差depth of bottom hole measurement井底测量深度,测量仪器下入深度depth of plunger泵挂深度depth of setting下入深度depth out 起出深度depth sounding测液面深度derrick井架,钻塔derrick apples井架落物derrick floor钻台derrick guy(wire)井架绷绳derrick lowering放倒井架derrick raising立井架desanding device除砂装置description of reservoir油藏描述design pressure 设计压力desired flow rate 预期产量desired location 预定位置desired setting position预定坐封位置detector检波器,引爆器,雷管detail design施工设计detailed rules and regulations细则detail specifications详细说明书detecting head 探头,探针detention time 停留时间deterioration老化,磨损determining depth of fluid探测液面深度detonating cord导爆索detonation爆燃,爆炸detonator 雷管deviation井斜development program开发方案development well开发井deviated hole(well)斜井,定向井direct hydrocarbon indication直接油气显示down hole power supply井下供电DAL(digital acoustic log)数字阵列声波difference between reservoir pressure and injection pressure 注水压差differential pressure压差differential pressure firing head压差起爆器digital multimeter数字万用表digital integrated circuit数字集成电路DCBIL(digitally circumferential borehole imaging log)数字井周成像diminishing pressure递减压力diphase双相diphasic flow 双相流动dipper捞砂筒diplog地层倾角测井diplog tool-4 arm四臂地层倾角测井仪dipmeter地层倾角测井仪dip倾角DDL(direct digital logging)数控测井distance of “zone”mark零长dipping rod量油杆dipping tub量油管direct-current generator直流发电机direct flushing正循环洗井direct grounding直接接地directional drilling定向钻井directives for construction施工指令director general 总裁,总监disabling accident严重伤害事故displaced well生产井disruptive test击穿实验,耐压实验distance between wells井距distance between rotary table and wellhead联入distance between tubing and bushing油补距distance measurement遥测distance of zero mark零长distillate field凝析气田distinguishability分辨率division 刻度,分公司dividing range (油水,油气)分界面dog-leg狗腿depth logger测井深度dual lower casing 下部双层套管DDL(dual laterolog)双侧向测井dual induction focused log双感应聚焦测井dual induction-laterolog双感应—侧向测井dual induction-laterolog 8双感应—八侧向测井DIL(dual induction log)双感应测井dual laterolog-microspherically focused log双感应—微球形聚焦测井dual-spaced density log双源距密度测井DSN(dual-spaced neutron log)双源距中子测井dual-spacing thermal decay time log双源距中子寿命测井dual lower tubing下部双层油管drilling mud钻井液depth offset深度补偿drilled out钻出,钻碎(水泥塞)dolomite(dolostone)白云岩date of availability有效期限drilling-out cement(plug)钻水泥塞drilling-out depth钻水泥塞深度dog house井口值班房double O-ring seal双O形圈密封double drum drawworks(hoist),double drum rope winch双滚筒绞车dog shift夜班double-shift work两班倒downflow well注水井downhole blow-out preventer井下防喷器downhole calibration井下标定,现场调试downhole completion equipment井下完井装置down hole completion fluid 井下完井液down hole equipment井下工具downhole instrument,downhole probe,downhole tool下井仪器downhole operation井下作业downhole instrument cable井下电缆down hole sampling井底取样downhole string井下管柱downhole television井下电视downhole testing井下测试downhole test string井下测试管柱downhole water flow regulator井下配水器downhole test tool,downhole well test equipment井下测试工具downhole remedial operation井下大修作业,修井作业down hole tools installation井下工具连接down setting packer stroke封隔器坐封下滑距离downslide下滑down time(downtime)停工时间deepen加深draft agreement协议草案draft contract合同草本drawworks unit绞车drillable bridge plug可钻式桥塞drift diameter gauge,drift size gauge tool通井规drillable packer可钻式封隔器drill collar stand钻铤立柱drilled proved reserves钻井探明储量driller司钻driller's log 司钻记录,钻井记录drilling completion program钻井完井方案drilling crew 钻井队drilling foreman钻井队长drilling induced damage钻井引起的损害drilling returns钻井返出流体drilling rig,drill unit钻机drilling supervisor钻井监督drill pipe frozen卡钻DST(drill stem test)钻杆测试drowned well水淹井drum spool绞车滚筒dry well干井dry pipe空油管drillsite井场,钻井工地daily service report日报DST interval(地层)测试井段DST personnel测试人员DST/TCP(drillstem test/tubing conveyed perforating)油管传输射孔与地层测射联作DST string(地层)测试管串DSTT(drillstem test tool)中途测试工具,地层测试器duration of test测试周期duration of the contract合同期限duty cycle作业周期dynamic log动态测井,生产测井Eearly field life 油田开发初期earth bar接地棒earthing wire地线eccentric annulus偏心环空eccentric injection mandrel偏心配水器edge water flood边缘注水edge water incursion边水侵入edge well边缘井evacuation,escape and rescue 人员撤离,逃生和救护engineering flow diagram工艺流程图effluent pressure井口流体压力efflux射流,流出egress pressure出口压力external-internal upset内外加厚的(管子)electrical logging电测electrical detonator电雷管electrical line unit电缆试井装置electric line operation电缆作业electric line set packer电缆坐封封隔器electric monoconductor单芯电缆electric wireline unit operation电缆绞车操作EL(electric log)电法测井ES(electric survey)电法勘探electrode电极electrode pad电极极板electromagnetic flowmeter电磁流量计electronic cartridge电子线路短节elevator plug提升短节elevator吊卡emergency decree 安全技术规程emergency measures应急措施emergency escape应急出口emergency shutdown紧急关井,紧急停工employment contract雇用合同employment dismissal解雇endless tubing连续油管enhanced oil recovery强化采油,提高采收率enhanced recovery scheme强化采油方案enhanced water injection强化注水environmental pollution环境污染environmental conservation环境保护environmental regulations环保规定end of date截止日期equipment component list设备元件明细表equipment list设备清单equipment maintenance设备维修保养equipment malfunction设备故障equipment operating instructions设备操作说明equipment out设备发运equipment specification manual设备技术手册erected cost安装费用erection of derrick立井架erection schedule安装进程error band误差范围error correction误差校正estimated reserves控制储量external upset外加厚evaluation criterion评价标准evaluation of bid评标evaluation reservoir油藏评价evaluation well评价井exploration well探井examination and acception验收exceptional well特殊井excessive load超载excessive pressure超压executive cost施工费用exhibit 展示,附加条款expanded packer膨胀式封隔器expected reserves预计储量expendable gun一次性射孔器expendable plug一次性桥塞expiration of the contract合同期满expendable through-tubing perforator一次性过油管射孔器exploitable reserve可采储量exploitation plan开采方案exploitation velocity开采速度exploitation well开发井exploitation drilling 勘探钻井exploratory well探井exploitation of oil and gas field油气田勘探exploitation targets勘探目的层explored reserves探明储量explosive炸药explosive charge射孔弹,炸药explosive deterioration炸药失效extinguisher灭火器extension coupling加长短节extension mechanical firing head机械点火头extension well扩边井extent of formation damage地层损害程度external thread 公扣external upset tubing外加厚油管extra security额外保险extreme over balance超正压(射孔)eye diameter孔眼直径eyehole孔眼Ffirst aid 急救face of the wellbore井壁facsimile传真factor of porosity孔隙度factor of saturation 饱和度failure-free operation正常运行,安全操作fault block断块fault block hydrocarbon reservoir断块油藏faulty operation误操作flowing casing pressure 开井时套压FBS(full-bore spinner flowmeter)全径涡轮流量计fracture conductivity裂缝导流能力fire control equipment消防设备FDL(fluid density log)流体密度测井FDT(fluid density tool)流体密度测井仪flushed zone冲洗带FIL(fluid identification log)流体识别测井,含水率测井flow diagram 流程图field development plan油田开发方案feasibility study可行性研究felt油毛毡formation evaluation measurement-while-drilling随钻测试与地层评价formation evaluation while drilling随钻地层评价formation fluid sampler地层流体取样器formation fluid test地层流体测试field acquisition现场采集field adjustment现场调试field analysis现场解释field conduct现场实施field connection现场连接field environment野外条件field lighting工地照明field job design现场作业设计field maintenance现场维护field office值班室field operation现场作业field process现场施工field record(notes)现场记录field staff现场施工人员field situation油气田位置field type facility现场设施field well生产井field work野外作业FIL(fracture identification log)裂缝识别测井filling in well加密井final work收尾工作find bottom探井底fine adjustment,fine turning微调finish barefooted裸眼完井finishing drilling完钻fire escape,fire exit安全出口fire extinction灭火fire foam producing machine泡沫灭火器fire protection防火firing head点火装置firing pin点火撞针first aid急救first-hand information第一手资料first party甲方fish落鱼,井下落物fishing 打捞fishing basket打捞篮fishing job(operation)打捞作业fishing tool打捞工具fishing grab打捞爪fishing rod打捞棒fishing service打捞作业队fishing up打捞出fissure 裂缝fissured formation裂缝性地层fissured oil field裂缝性油田fissured reservoir裂缝性油气藏fissure fault裂缝断层fixed pulley定滑轮flame damper(snuffer)灭火器flame igniter点火装置flange法兰盘flank water drive边水驱动flank waterflooding边缘注水flank well油田边缘井flare opening喇叭口flexible connection揉性连接flood development注水开发flood effectiveness注水效果flooding network注采井网flooding well network注水井网floodout水淹floorman钻工flow capacity地层系数,产能系数flow head井口装置,测试井口flow column油管柱flowing bean(nipple)油嘴flowing tubing pressure开井油压flowing well自喷井flow rate log流量测井flow well开井测试,开井放喷fluid column cushion测试液垫,水垫fluid column pressure液柱压力fluid level液面深度flush collar平口接箍flushing fluid洗井液,钻井液flowmeter流量计field operation handbook,field operating manual现场操作手册force outage事故停机foreign side外方foreman工头,领班formation caving井壁坍塌formation contaminant地层污染formation evaluation地层评价formation fluid pressure地层流体压力formation fluid sampling地层流体取样formation fracturing 地层压裂formation of interest目的层formation sand flow地层出砂formation solid control防砂formation stimulation油层增产措施formation tester地层测试器FAL(formation - analysis log)地层分析测井FDC(formation density compensated)补偿地层密度测井仪formation density log地层密度测井FDT(formation density tool)地层密度测井仪formation to be tested测试层段,测试井段formation water resistivity地层水电阻率formation water salinity地层水矿化度fountain well自喷井four-arm caliper四臂井径仪four-way piece四通fire plug消防栓formation pressure gradient地层压力梯度fracture fluid 压裂液fracture job压裂作业fracture裂缝,压裂fracture acidizing压裂酸化fractured hydrocarbon reservoir裂缝油藏fractured distribution裂缝分布fractured well裂缝井,压裂井fracture fluid压裂液fracture permeability裂缝渗透率fracture porosity裂缝孔隙度FIL(fracture identification log)裂缝识别测井fracture log裂缝测井fracturing technology压裂工艺fracturing tool压裂工具fracturing truck(unit)压裂车freeze in卡钻,卡死full bore(flow,opening,port)全通径fullbore tool全通径工具GGeiger counter盖革计数管gas condensate凝析油,凝析气gamma ray spectrum log 自然伽马能谱测井gas condensate field 凝析气田gas condensate reservoir凝析油储量gas condensate well凝析气井gaseous well气井gas injection(input)well注气井gas lift气举gas lift equipment气举设备gas lift installation气举装置gas lift production气举采油gas lift string气举管柱gas lift well气举井gas mask防毒面具gas/oil horizon(interface,surface)油气界面gas-oil separation油气分离gas prospecting天然气勘探gauge cock压力表gauge reading仪表读数gauge ring通井规,通径规gauging nipple测量短节gun azimuth射孔枪方位ground equipment地面设备general purpose常用的,通用的general safety hazard一般事故general sketch(drawing)示意图geological base map井位图geological exploration地质勘探geological information地质资料geologic anomaly地质异常geologic condition地质条件geologic description地质描述geologic feature地质特征geologic framework(structure)地质构造geologic interpretation地质解释geologic profile(section)地质剖面geologic reserve地质储量geologic trap地质圈闭geophysical exploration地球物理勘探geopressured well高压井geophone检波器geophysical prospecting,geophysical survey地球物理勘探,物探general field engineer现场总工程师go in the hole下入井内go dead(油气井)停止自喷gun offset射孔枪偏位go fishing 进行打捞general operating specification一般操作规程gun perforation射孔gun perforator射孔枪gradient survey梯度测量gin滑车gradient sonde梯度电极系gradiomanometer压差密度仪grand slam大满贯测井解释方法gravity logging重力测井graph plotter绘图仪graveyard shift夜班grease gun黄油枪grease oil润滑油gamma ray log自然伽马测井gross record原始记录gross thickness总厚度ground protection接地保护ground support aquipment地面辅助设备good show of oil and gas油气显示良好guard electrode logging屏蔽电极测井,聚焦电阻率测井,侧向测井gun射孔枪gun carrier弹架,枪身gun perforated casing 射孔套管gun perforated completion射孔完井gun positioning射孔器定位gun stand-off枪身扶正gun system射孔设备gusher well自喷井,失控井Hhydraulic液压的,液压设备Halliburton turbine(flow)meter哈里伯顿涡轮流量计hard-boiled hat,hard hat,hardhat helmet安全帽hard disk硬盘handling sub提升短节hazard identification危险标志hazardous area(location)危险区域hazardous operation有害作业hazardous situation report事故报告hazardous substance有害物质hydrocarbon油气horizontal displacement水平位移headquaters总部headman组长,队长head space间距,安全距离head well puller修井队长heapstead井口房heavy crude oil,heavy oil重油,稠油heavy oil recovery稠油开采heavy weight tubing加厚油管heavy weight drilling pipe加厚钻杆HEGF(high energy gas fracturing)高能气体压裂helical shot pattern螺旋布孔格式helper副司钻heptcable七芯电缆hermetic seal,hermetization密封heterogeneous非均质的,多相的high-angle大斜度high definition,high resolution高分辨率high density pattern perforation高孔密射孔high-inclination well,high-deviated well,high angle deviated hole大斜度井high pressure gas well高压气井high productivity well,high rate producing well高产井HDT(high-resolution dipmeter tool)高分辨率地层倾角仪HDIL(high definition induction logging)高分辨率阵列感应high risk industry高危险行业high service高技术服务high-temperature service高温作业high water-cut layer高含水油层high-water-cut oil-producing well高含水产油井high-water-cut producer高含水油井high water-cut stage(油田)高含水期high water-cut well高含水井high wax content oil高含蜡原油historical well analysis老井分析hydraulically operated equipment液压驱动设备hoist提升,起钻hoistman绞车司机hole anomaly井眼不规则hole blow井喷hole caliper井径仪hole cleaning井眼清洗hole condition井眼条件hole deflection(deviation)井斜hole gauge通井规hole section井段hole pattern井网hole spacing井距hole structure井身结构hole toe 井底hole top井口hollow carrier射孔器枪身hollow carrier gun有枪身射孔器hook wrench钩头扳手hoot-owl shift(tour)大夜班horizontal deviation水平位移horizontal drainhole,horizontal well 水平井horizontal hole section水平井段horizontal well test水平井测试horsestone夹层horizontal drilling水平钻井hot work operational guideline火工作业操作规程hot work permitting procedure火工许可程序high pressure high temperature well test高温高压井测试hookwall packer卡瓦封隔器hydra-cushion shock tool液压减震工具hydraulically-powered winch液压绞车hydrocarbon release油气泄漏hydrocarbon resources油气资源hydrocarbon show油气显示hydrocarbon trap油气圈闭hydroseal液压密封Iinspection & acceptance record验收记录initial depth起始深度idle cost停工损失idle equipment(unit)闲置设备instrument engineer仪修工程师ignition voltage点火电压induction electrical log,induction electrical survey,induction log感应测井immediate vicinity of wellbore近井地带invitation for bid招标igneous rock火成岩igniter(ignitor)引爆装置igniter system,ignition system点火系统,点火装置impact damper减震器。
发现陈数笼目磁体TbMnsub6subSnsub6sub

发现陈数笼目磁体TbMn6Sn6作者:来源:《科学中国人·上半月》2020年第09期发现陈数笼目磁体TbMn6Sn6北京大学物理学院量子材料科学中心贾爽副教授、普林斯顿大学的M. Zahid Hasan教授以及合作者研究了一种新的笼目磁体TbMn6Sn6。
相关论文发表于Nature。
这种材料具有分立的纯净锰原子形成的笼目晶格,而且其同时具有平面外铁磁基态以及较大的磁矫顽力。
实验利用光谱成像方法直接观察到了具有平面外磁化的纯净锰基笼目晶格。
当外加磁场时,在笼目晶格上观测到了明显的朗道量子化,这在其他任何笼目材料中都没有发现。
这种特有的朗道扇结构揭示了自旋极化的狄拉克费米子具有很大的陈数能隙。
实验还发现了显著的本征反常霍尔效应标度,这与谱学研究结果完全一致,证明能隙的陈数为1。
量子点光催化剂活性中心的定点“锚定”研究进展中国科学院理化技术研究所吴骊珠、李旭兵等在量子点光催化剂活性中心的定点“锚定”及其优异产氢性能研究方面取得新进展。
相关论文发表于Matter。
通过人工光合成将太阳能转化为化学能并以氢气等形式储存起来,是太阳能转化和利用的一种有效途径。
在众多人工光合成制氢反应研究中,基于半导体量子点与廉价金属离子构筑的人工光合成体系展现出了高活性和稳定性,已成为光催化分解水制氢的一条高效、便捷且经济的途径。
研究团队发展的选择性阳离子交换的手段实现廉价金属离子在量子点表面的定点、定向负载,为构筑高效、稳定的光催化剂提供了新策略。
较低能量下化学反应中的量子几何相位效应中国科学院大连化学物理研究所孙志刚、杨学明等与中国科技大学教授王兴安合作,在H+HD→H2+D反应中的几何相位效应研究中取得新進展。
相关论文发表于Nature Communications。
研究发现,与之前2.77电子伏反应能量处的几何相位效应不同,在较低能量处,几何相位效应不仅体现在前向散射振荡上,而且较多地体现在后向散射振荡上。
里德堡原子微波电场测量

doi:10.11823/j.issn.1674-5795.2021.01.01里德堡原子微波电场测量白金海,胡栋,贡昊,王宇(航空工业北京长城计量测试技术研究所,北京100095)摘要:里德堡原子是处于高激发态的原子,其主量子数大、寿命高,具有极化率高、电偶极矩大等特点,对外电场十分敏感。
基于热蒸气室中里德堡原子的量子干涉原理(电磁感应透明和Autler-Towns分裂效应)的微波电场精密测量不仅具有远高于传统偶极天线的灵敏度,且具有自校准、对外电场干扰少、测量频率范围大等优点,是下一代电场测量标准。
本文综述了里德堡原子的微波电场测量研究,详细介绍了其基本原理和当前研究进展,并讨论了未来发展方向。
关键词:量子精密测量;里德堡原子;微波电场;电磁感应透明中图分类号:TB97文献标识码:A文章编号:1674-5795(2021)01-0001-09Rydberg Atoms Based Microwave Electric Field SensingBAIJinhai,HU Dong,GONG Hao$WANG Yu(Changcheng Institute of Metrology&Measurement,Beijing100095,China)Abstract:Rydberg atoms are the atoms in highly excited states with lar-e principaO quantum numbers n,and long lifetimes.The lar-e Ryd-ber-atom polarizabilitu and strong dipole transitions between enereetically nearby states are highly sensitive to electris fielOs.The new developed scheme for microwave electric field precision measurement is based on quantum interference effects(electromaaneticclly induced transparency and Autler-Townes splitting)in Rydbere atoms contained in a dielectric vapoe cell.The mininium measured strengths of microwave electric fieies of the new scheme are far below the standard values obtained by traditional antenna methods.And it has several advantages,such as self-calibration,non-perturbation to the measured field,a broadband measurement frequency range,etc,is the next-generation electric field standard.In this review,we describe work on the new method for measuring microwave electric field based on Rydberg atoms.We introducc the basic theory and experimental techniques of the new method,and discuss the future development direction.Key words:quantum precision measurement;Rydberg atoms;microwave electric fielO;electromagnetically induced transparency0引言原子是一种典型的量子体系,具有可复现、性能稳定、能级精确等优点。
磁共振成像技术中英文名词对照

美国国家标准协会
Smearingeffect
涂抹效应
Magnetophosphene
磁致光幻觉
Penetrationpanel
波导板
Rundowneffect
退化效应
Off-resonance
失振
Fullwidthathalf-maximum,FWHM
感兴趣区
Spinecho,SE
自旋回波
Spinecho-echoplanarimaging,SE-EPI
自旋-平面回波成像
SENSitivityencoding,SENSE
敏感度编码
siMultaneousacquisitionofspatialharmony,SMASH
空间协调同步采集
Signal-to-noiseratio,SNR
Centralprocessingunit,CPU
中央处理单元
Touchscreen
触摸屏
Systemsoftware
系统软件
Operatingsystem,OS
操作系统
Applicationsoftware
应用软件
Worklist
工作表
Filetransferprotocal,FTP
文件传输
Send/receive
刺激回波采集模式
ShortTIinversionrecovery,STIR
短反转时间的反转恢复序列
T1-weightedimaging,T1WI
T1加权成像
T2prepared-fastgradientrecalledecho,T2-FGRET2
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单分子综述-NATURE NANOTECHNOLOGY-Single-molecule junctions beyond electronic transport-2013

Stimulated by the initial proposal that molecules could be used as the functional building blocks in electronic devices 1, researchers around the world have been probing transport phenomena at the single-molecule level both experimentally and theoretically 2–11. Recent experimental advances include the demonstration of conductance switching 12–16, rectification 17–21, and illustrations on how quantum interference effects 22–26 play a critical role in the electronic properties of single metal–molecule–metal junctions. The focus of these experiments has been to both provide a fundamental understanding of transport phenomena in nanoscale devices as well as to demonstrate the engineering of functionality from rational chemical design in single-molecule junctions. Although so far there are no ‘molecular electronics’ devices manufactured commercially, basic research in this area has advanced significantly. Specifically, the drive to create functional molecular devices has pushed the frontiers of both measurement capabilities and our fundamental understanding of varied physi-cal phenomena at the single-molecule level, including mechan-ics, thermoelectrics, optoelectronics and spintronics in addition to electronic transport characterizations. Metal–molecule–metal junctions thus represent a powerful template for understanding and controlling these physical and chemical properties at the atomic- and molecular-length scales. I n this realm, molecular devices have atomically defined precision that is beyond what is achievable at present with quantum dots. Combined with the vast toolkit afforded by rational molecular design 27, these techniques hold a significant promise towards the development of actual devices that can transduce a variety of physical stimuli, beyond their proposed utility as electronic elements 28.n this Review we discuss recent measurements of physi-cal properties of single metal–molecule–metal junctions that go beyond electronic transport characterizations (Fig. 1). We present insights into experimental investigations of single-molecule junc-tions under different stimuli: mechanical force, optical illumina-tion and thermal gradients. We then review recent progress in spin- and quantum interference-based phenomena in molecular devices. I n what follows, we discuss the emerging experimentalSingle-molecule junctions beyond electronic transportSriharsha V. Aradhya and Latha Venkataraman*The id ea of using ind ivid ual molecules as active electronic components provid ed the impetus to d evelop a variety of experimental platforms to probe their electronic transport properties. Among these, single-molecule junctions in a metal–molecule–metal motif have contributed significantly to our fundamental understanding of the principles required to realize molecular-scale electronic components from resistive wires to reversible switches. The success of these techniques and the growing interest of other disciplines in single-molecule-level characterization are prompting new approaches to investigate metal–molecule–metal junctions with multiple probes. Going beyond electronic transport characterization, these new studies are highlighting both the fundamental and applied aspects of mechanical, optical and thermoelectric properties at the atomic and molecular scales. Furthermore, experimental demonstrations of quantum interference and manipulation of electronic and nuclear spins in single-molecule circuits are heralding new device concepts with no classical analogues. In this Review, we present the emerging methods being used to interrogate multiple properties in single molecule-based devices, detail how these measurements have advanced our understanding of the structure–function relationships in molecular junctions, and discuss the potential for future research and applications.methods, focusing on the scientific significance of investigations enabled by these methods, and their potential for future scientific and technological progress. The details and comparisons of the dif-ferent experimental platforms used for electronic transport char-acterization of single-molecule junctions can be found in ref. 29. Together, these varied investigations underscore the importance of single-molecule junctions in current and future research aimed at understanding and controlling a variety of physical interactions at the atomic- and molecular-length scale.Structure–function correlations using mechanicsMeasurements of electronic properties of nanoscale and molecu-lar junctions do not, in general, provide direct structural informa-tion about the junction. Direct imaging with atomic resolution as demonstrated by Ohnishi et al.30 for monoatomic Au wires can be used to correlate structure with electronic properties, however this has not proved feasible for investigating metal–molecule–metal junctions in which carbon-based organic molecules are used. Simultaneous mechanical and electronic measurements provide an alternate method to address questions relating to the struc-ture of atomic-size junctions 31. Specifically, the measurements of forces across single metal–molecule–metal junctions and of metal point contacts provide independent mechanical information, which can be used to: (1) relate junction structure to conduct-ance, (2) quantify bonding at the molecular scale, and (3) provide a mechanical ‘knob’ that can be used to control transport through nanoscale devices. The first simultaneous measurements of force and conductance in nanoscale junctions were carried out for Au point contacts by Rubio et al.32, where it was shown that the force data was unambiguously correlated to the quantized changes in conductance. Using a conducting atomic force microscope (AFM) set-up, Tao and coworkers 33 demonstrated simultaneous force and conductance measurements on Au metal–molecule–metal junc-tions; these experiments were performed at room temperature in a solution of molecules, analogous to the scanning tunnelling microscope (STM)-based break-junction scheme 8 that has now been widely adopted to perform conductance measurements.Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA. *e-mail: lv2117@DOI: 10.1038/NNANO.2013.91These initial experiments relied on the so-called static mode of AFM-based force spectroscopy, where the force on the canti-lever is monitored as a function of junction elongation. I n this method the deflection of the AFM cantilever is directly related to the force on the junction by Hooke’s law (force = cantilever stiff-ness × cantilever deflection). Concurrently, advances in dynamic force spectroscopy — particularly the introduction of the ‘q-Plus’ configuration 34 that utilizes a very stiff tuning fork as a force sen-sor — are enabling high-resolution measurements of atomic-size junctions. In this technique, the frequency shift of an AFM cantilever under forced near-resonance oscillation is measuredas a function of junction elongation. This frequency shift can be related to the gradient of the tip–sample force. The underlying advantage of this approach is that frequency-domain measure-ments of high-Q resonators is significantly easier to carry out with high precision. However, in contrast to the static mode, recover-ing the junction force from frequency shifts — especially in the presence of dissipation and dynamic structural changes during junction elongation experiments — is non-trivial and a detailed understanding remains to be developed 35.The most basic information that can be determined throughsimultaneous measurement of force and conductance in metalThermoelectricsSpintronics andMechanicsOptoelectronicsHotColdFigure 1 | Probing multiple properties of single-molecule junctions. phenomena in addition to demonstrations of quantum mechanical spin- and interference-dependent transport concepts for which there are no analogues in conventional electronics.contacts is the relation between the measured current and force. An experimental study by Ternes et al.36 attempted to resolve a long-standing theoretical prediction 37 that indicated that both the tunnelling current and force between two atomic-scale metal contacts scale similarly with distance (recently revisited by Jelinek et al.38). Using the dynamic force microscopy technique, Ternes et al. effectively probed the interplay between short-range forces and conductance under ultrahigh-vacuum conditions at liquid helium temperatures. As illustrated in Fig. 2a, the tunnel-ling current through the gap between the metallic AFM probe and the substrate, and the force on the cantilever were recorded, and both were found to decay exponentially with increasing distance with nearly the same decay constant. Although an exponential decay in current with distance is easily explained by considering an orbital overlap of the tip and sample wavefunctions through a tunnel barrier using Simmons’ model 39, the exponential decay in the short-range forces indicated that perhaps the same orbital controlled the interatomic short-range forces (Fig. 2b).Using such dynamic force microscopy techniques, research-ers have also studied, under ultrahigh-vacuum conditions, forces and conductance across junctions with diatomic adsorbates such as CO (refs 40,41) and more recently with fullerenes 42, address-ing the interplay between electronic transport, binding ener-getics and structural evolution. I n one such experiment, Tautz and coworkers 43 have demonstrated simultaneous conduct-ance and stiffness measurements during the lifting of a PTCDA (3,4,9,10-perylene-tetracarboxylicacid-dianhydride) molecule from a Ag(111) substrate using the dynamic mode method with an Ag-covered tungsten AFM tip. The authors were able to follow the lifting process (Fig. 2c,d) monitoring the junction stiffness as the molecule was peeled off the surface to yield a vertically bound molecule, which could also be characterized electronically to determine the conductance through the vertical metal–molecule–metal junction with an idealized geometry. These measurements were supported by force field-based model calculations (Fig. 2c and dashed black line in Fig. 2d), presenting a way to correlate local geometry to the electronic transport.Extending the work from metal point contacts, ambient meas-urements of force and conductance across single-molecule junc-tions have been carried out using the static AFM mode 33. These measurements allow correlation of the bond rupture forces with the chemistry of the linker group and molecular backbone. Single-molecule junctions are formed between a Au-metal sub-strate and a Au-coated cantilever in an environment of molecules. Measurements of current through the junction under an applied bias determine conductance, while simultaneous measurements of cantilever deflection relate to the force applied across the junction as shown in Fig. 2e. Although measurements of current throughzF zyxCantileverIVabConductance G (G 0)1 2 3Tip–sample distance d (Å)S h o r t -r a n g e f o r c e F z (n N )10−310−210−11110−110−210−3e10−410−210C o n d u c t a n c e (G 0)Displacement86420Force (nN)0.5 nm420−2F o r c e (n N )−0.4−0.200.20.4Displacement (nm)SSfIncreasing rupture forcegc(iv)(i)(iii)(ii)Low HighCounts d9630−3d F /d z (n N n m −1)(i)(iv)(iii)(ii)A p p r o a chL i ft i n g110−210−4G (2e 2/h )2051510z (Å)H 2NNH 2H 2NNH 2NNFigure 2 | Simultaneous measurements of electronic transport and mechanics. a , A conducting AFM set-up with a stiff probe (shown schematically) enabled the atomic-resolution imaging of a Pt adsorbate on a Pt(111) surface (tan colour topography), before the simultaneous measurement of interatomic forces and currents. F z , short-range force. b , Semilogarithmic plot of tunnelling conductance and F z measured over the Pt atom. A similar decay constant for current and force as a function of interatomic distance is seen. The blue dashed lines are exponential fits to the data. c , Structural snapshots showing a molecular mechanics simulation of a PTCDA molecule held between a Ag substrate and tip (read right to left). It shows the evolution of the Ag–PTCDA–Ag molecular junction as a function of tip–surface distance. d , Upper panel shows experimental stiffness (d F /d z ) measurements during the lifting process performed with a conducting AFM. The calculated values from the simulation are overlaid (dashed black line). Lower panel shows simultaneously measured conductance (G ). e , Simultaneously measured conductance (red) and force (blue) measurements showing evolution of a molecular junction as a function of junction elongation. A Au point contact is first formed, followed by the formation of a single-molecule junction, which then ruptures on further elongation. f , A two-dimensional histogram of thousands of single-molecule junctionrupture events (for 1,4-bis(methyl sulphide) butane; inset), constructed by redefining the rupture location as the zero displacement point. The most frequently measured rupture force is the drop in force (shown by the double-headed arrow) at the rupture location in the statistically averaged force trace (overlaid black curve). g , Beyond the expected dependence on the terminal group, the rupture force is also sensitive to the molecular backbone, highlighting the interplay between chemical structure and mechanics. In the case of nitrogen-terminated molecules, rupture force increases fromaromatic amines to aliphatic amines and the highest rupture force is for molecules with pyridyl moieties. Figure reproduced with permission from: a ,b , ref. 36, © 2011 APS; c ,d , ref. 43, © 2011 APS.DOI: 10.1038/NNANO.2013.91such junctions are easily accomplished using standard instru-mentation, measurements of forces with high resolution are not straightforward. This is because a rather stiff cantilever (with a typical spring constant of ~50 N m−1) is typically required to break the Au point contact that is first formed between the tip and sub-strate, before the molecular junctions are created. The force reso-lution is then limited by the smallest deflection of the cantilever that can be measured. With a custom-designed system24 our group has achieved a cantilever displacement resolution of ~2 pm (com-pare with Au atomic diameter of ~280 pm) using an optical detec-tion scheme, allowing the force noise floor of the AFM set-up to be as low as 0.1 nN even with these stiff cantilevers (Fig. 2e). With this system, and a novel analysis technique using two-dimensional force–displacement histograms as illustrated in Fig. 2f, we have been able to systematically probe the influence of the chemical linker group44,45 and the molecular backbone46 on single-molecule junction rupture force as illustrated in Fig. 2g.Significant future opportunities with force measurements exist for investigations that go beyond characterizations of the junc-tion rupture force. In two independent reports, one by our group47 and another by Wagner et al.48, force measurements were used to quantitatively measure the contribution of van der Waals interac-tions at the single-molecule level. Wagner et al. used the stiffness data from the lifting of PTCDA molecules on a Au(111) surface, and fitted it to the stiffness calculated from model potentials to estimate the contribution of the various interactions between the molecule and the surface48. By measuring force and conductance across single 4,4’-bipyridine molecules attached to Au electrodes, we were able to directly quantify the contribution of van der Waals interactions to single-molecule-junction stiffness and rupture force47. These experimental measurements can help benchmark the several theoretical frameworks currently under development aiming to reliably capture van der Waals interactions at metal/ organic interfaces due to their importance in diverse areas includ-ing catalysis, electronic devices and self-assembly.In most of the experiments mentioned thus far, the measured forces were typically used as a secondary probe of junction prop-erties, instead relying on the junction conductance as the primary signature for the formation of the junction. However, as is the case in large biological molecules49, forces measured across single-mol-ecule junctions can also provide the primary signature, thereby making it possible to characterize non-conducting molecules that nonetheless do form junctions. Furthermore, molecules pos-sess many internal degrees of motion (including vibrations and rotations) that can directly influence the electronic transport50, and the measurement of forces with such molecules can open up new avenues for mechanochemistry51. This potential of using force measurements to elucidate the fundamentals of electronic transport and binding interactions at the single-molecule level is prompting new activity in this area of research52–54. Optoelectronics and optical spectroscopyAddressing optical properties and understanding their influence on electronic transport in individual molecular-scale devices, col-lectively referred to as ‘molecular optoelectronics’, is an area with potentially important applications55. However, the fundamental mismatch between the optical (typically, approximately at the micrometre scale) and molecular-length scales has historically presented a barrier to experimental investigations. The motiva-tions for single-molecule optoelectronic studies are twofold: first, optical spectroscopies (especially Raman spectroscopy) could lead to a significantly better characterization of the local junction structure. The nanostructured metallic electrodes used to real-ize single-molecule junctions are coincidentally some of the best candidates for local field enhancement due to plasmons (coupled excitations of surface electrons and incident photons). This there-fore provides an excellent opportunity for understanding the interaction of plasmons with molecules at the nanoscale. Second, controlling the electronic transport properties using light as an external stimulus has long been sought as an attractive alternative to a molecular-scale field-effect transistor.Two independent groups have recently demonstrated simulta-neous optical and electrical measurements on molecular junctions with the aim of providing structural information using an optical probe. First, Ward et al.56 used Au nanogaps formed by electromi-gration57 to create molecular junctions with a few molecules. They then irradiated these junctions with a laser operating at a wavelength that is close to the plasmon resonance of these Au nanogaps to observe a Raman signal attributable to the molecules58 (Fig. 3a). As shown in Fig. 3b, they observed correlations between the intensity of the Raman features and magnitude of the junction conductance, providing direct evidence that Raman signatures could be used to identify junction structures. They later extended this experimental approach to estimate vibrational and electronic heating in molecu-lar junctions59. For this work, they measured the ratio of the Raman Stokes and anti-Stokes intensities, which were then related to the junction temperature as a function of the applied bias voltage. They found that the anti-Stokes intensity changed with bias voltage while the Stokes intensity remained constant, indicating that the effective temperature of the Raman-active mode was affected by passing cur-rent through the junction60. Interestingly, Ward et al. found that the vibrational mode temperatures exceeded several hundred kelvin, whereas earlier work by Tao and co-workers, who used models for junction rupture derived from biomolecule research, had indicated a much smaller value (~10 K) for electronic heating61. Whether this high temperature determined from the ratio of the anti-Stokes to Stokes intensities indicates that the electronic temperature is also similarly elevated is still being debated55, however, one can definitely conclude that such measurements under a high bias (few hundred millivolts) are clearly in a non-equilibrium transport regime, and much more research needs to be performed to understand the details of electronic heating.Concurrently, Liu et al.62 used the STM-based break-junction technique8 and combined this with Raman spectroscopy to per-form simultaneous conductance and Raman measurements on single-molecule junctions formed between a Au STM tip and a Au(111) substrate. They coupled a laser to a molecular junction as shown in Fig. 3c with a 4,4’-bipyridine molecule bridging the STM tip (top) and the substrate (bottom). Pyridines show clear surface-enhanced Raman signatures on metal58, and 4,4’-bipy-ridine is known to form single-molecule junctions in the STM break-junction set-up8,15. Similar to the study of Ward et al.56, Liu et al.62 found that conducting molecular junctions had a Raman signature that was distinct from the broken molecu-lar junctions. Furthermore, the authors studied the spectra of 4,4’-bipyridine at different bias voltages, ranging from 10 to 800 mV, and reported a reversible splitting of the 1,609 cm–1 peak (Fig. 3d). Because this Raman signature is due to a ring-stretching mode, they interpreted this splitting as arising from the break-ing of the degeneracy between the rings connected to the source and drain electrodes at high biases (Fig. 3c). Innovative experi-ments such as these have demonstrated that there is new physics to be learned through optical probing of molecular junctions, and are initiating further interest in understanding the effect of local structure and vibrational effects on electronic transport63. Experiments that probe electroluminescence — photon emis-sion induced by a tunnelling current — in these types of molec-ular junction can also offer insight into structure–conductance correlations. Ho and co-workers have demonstrated simultaneous measurement of differential conductance and photon emissionDOI: 10.1038/NNANO.2013.91from individual molecules at a submolecular-length scale using an STM 64,65. Instead of depositing molecules directly on a metal sur-face, they used an insulating layer to decouple the molecule from the metal 64,65 (Fig. 3e). This critical factor, combined with the vac-uum gap with the STM tip, ensures that the metal electrodes do not quench the radiated photons, and therefore the emitted photons carry molecular fingerprints. Indeed, the experimental observation of molecular electroluminescence of C 60 monolayers on Au(110) by Berndt et al.66 was later attributed to plasmon-mediated emission of the metallic electrodes, indirectly modulated by the molecule 67. The challenge of finding the correct insulator–molecule combination and performing the experiments at low temperature makes electro-luminescence relatively uncommon compared with the numerous Raman studies; however, progress is being made on both theoretical and experimental fronts to understand and exploit emission pro-cesses in single-molecule junctions 68.Beyond measurements of the Raman spectra of molecular junctions, light could be used to control transport in junctions formed with photochromic molecular backbones that occur in two (or more) stable and optically accessible states. Some common examples include azobenzene derivatives, which occur in a cis or trans form, as well as diarylene compounds that can be switched between a conducting conjugated form and a non-conducting cross-conjugated form 69. Experiments probing the conductance changes in molecular devices formed with such compounds have been reviewed in depth elsewhere 70,71. However, in the single-mol-ecule context, there are relatively few examples of optical modula-tion of conductance. To a large extent, this is due to the fact that although many molecular systems are known to switch reliably in solution, contact to metallic electrodes can dramatically alter switching properties, presenting a significant challenge to experi-ments at the single-molecule level.Two recent experiments have attempted to overcome this chal-lenge and have probed conductance changes in single-molecule junctions while simultaneously illuminating the junctions with visible light 72,73. Battacharyya et al.72 used a porphyrin-C 60 ‘dyad’ molecule deposited on an indium tin oxide (I TO) substrate to demonstrate the light-induced creation of an excited-state mol-ecule with a different conductance. The unconventional transpar-ent ITO electrode was chosen to provide optical access while also acting as a conducting electrode. The porphyrin segment of the molecule was the chromophore, whereas the C 60 segment served as the electron acceptor. The authors found, surprisingly, that the charge-separated molecule had a much longer lifetime on ITO than in solution. I n the break-junction experiments, the illuminated junctions showed a conductance feature that was absent without1 μm Raman shift (cm –1)1,609 cm –1(–)Source 1,609 cm–1Drain (+)Low voltage High voltageMgPNiAl(110)STM tip (Ag)VacuumThin alumina 1.4 1.5 1.6 1.701020 3040200400Photon energy (eV)3.00 V 2.90 V 2.80 V 2.70 V 2.60 V2.55 V 2.50 VP h o t o n c o u n t s (a .u .)888 829 777731Wavelength (nm)Oxideacebd f Raman intensity (CCD counts)1,5001,00050000.40.30.20.10.01,590 cm −11,498 cm −1d I /d V (μA V –1)1,609 cm –11,631 cm–11 μm1 μmTime (s)Figure 3 | Simultaneous studies of optical effects and transport. a , A scanning electron micrograph (left) of an electromigrated Au junction (light contrast) lithographically defined on a Si substrate (darker contrast). The nanoscale gap results in a ‘hot spot’ where Raman signals are enhanced, as seen in the optical image (right). b , Simultaneously measured differential conductance (black, bottom) and amplitudes of two molecular Raman features (blue traces, middle and top) as a function of time in a p-mercaptoaniline junction. c , Schematic representation of a bipyridine junction formed between a Au STM tip and a Au(111) substrate, where the tip enhancement from the atomically sharp STM tip results in a large enhancement of the Raman signal. d , The measured Raman spectra as a function of applied bias indicate breaking of symmetry in the bound molecule. e , Schematic representation of a Mg-porphyrin (MgP) molecule sandwiched between a Ag STM tip and a NiAl(110) substrate. A subnanometre alumina insulating layer is a key factor in measuring the molecular electroluminescence, which would otherwise be overshadowed by the metallic substrate. f , Emission spectra of a single Mg-porphyrin molecule as a function of bias voltage (data is vertically offset for clarity). At high biases, individual vibronic peaks become apparent. The spectra from a bare oxide layer (grey) is shown for reference. Figure reproduced with permission from: a ,b , ref. 56, © 2008 ACS; c ,d , ref. 62, © 2011 NPG; e ,f , ref. 65, © 2008 APS.DOI: 10.1038/NNANO.2013.91light, which the authors assigned to the charge-separated state. In another approach, Lara-Avila et al.73 have reported investigations of a dihydroazulene (DHA)/vinylheptafulvene (VHF) molecule switch, utilizing nanofabricated gaps to perform measurements of Au–DHA–Au single-molecule junctions. Based on the early work by Daub et al.74, DHA was known to switch to VHF under illumina-tion by 353-nm light and switch back to DHA thermally. In three of four devices, the authors observed a conductance increase after irradiating for a period of 10–20 min. In one of those three devices, they also reported reversible switching after a few hours. Although much more detailed studies are needed to establish the reliability of optical single-molecule switches, these experiments provide new platforms to perform in situ investigations of single-molecule con-ductance under illumination.We conclude this section by briefly pointing to the rapid pro-gress occurring in the development of optical probes at the single-molecule scale, which is also motivated by the tremendous interest in plasmonics and nano-optics. As mentioned previously, light can be coupled into nanoscale gaps, overcoming experimental chal-lenges such as local heating. Banerjee et al.75 have exploited these concepts to demonstrate plasmon-induced electrical conduction in a network of Au nanoparticles that form metal–molecule–metal junctions between them (Fig. 3f). Although not a single-molecule measurement, the control of molecular conductance through plas-monic coupling can benefit tremendously from the diverse set of new concepts under development in this area, such as nanofabri-cated transmission lines 76, adiabatic focusing of surface plasmons, electrical excitation of surface plasmons and nanoparticle optical antennas. The convergence of plasmonics and electronics at the fundamental atomic- and molecular-length scales can be expected to provide significant opportunities for new studies of light–mat-ter interaction 77–79.Thermoelectric characterization of single-molecule junctions Understanding the electronic response to heating in a single-mole-cule junction is not only of basic scientific interest; it can have a tech-nological impact by improving our ability to convert wasted heat into usable electricity through the thermoelectric effect, where a temper-ature difference between two sides of a device induces a voltage drop across it. The efficiency of such a device depends on its thermopower (S ; also known as the Seebeck coefficient), its electric and thermal conductivity 80. Strategies for increasing the efficiency of thermoelec-tric devices turned to nanoscale devices a decade ago 81, where one could, in principle, increase the electronic conductivity and ther-mopower while independently minimizing the thermal conductiv-ity 82. This has motivated the need for a fundamental understandingof thermoelectrics at the single-molecule level 83, and in particular, the measurement of the Seebeck coefficient in such junctions. The Seebeck coefficient, S = −(ΔV /ΔT )|I = 0, determines the magnitude of the voltage developed across the junction when a temperature dif-ference ΔT is applied, as illustrated in Fig. 4a; this definition holds both for bulk devices and for single-molecule junctions. If an addi-tional external voltage ΔV exists across the junction, then the cur-rent I through the junction is given by I = G ΔV + GS ΔT where G is the junction conductance 83. Transport through molecular junctions is typically in the coherent regime where conductance, which is pro-portional to the electronic transmission probability, is given by the Landauer formula 84. The Seebeck coefficient at zero applied voltage is then related to the derivative of the transmission probability at the metal Fermi energy (in the off-resonance limit), with, S = −∂E ∂ln( (E ))π2k 2B T E 3ewhere k B is the Boltzmann constant, e is the charge of the electron, T (E ) is the energy-dependent transmission function and E F is the Fermi energy. When the transmission function for the junction takes on a simple Lorentzian form 85, and transport is in the off-resonance limit, the sign of S can be used to deduce the nature of charge carriers in molecular junctions. In such cases, a positive S results from hole transport through the highest occupied molecu-lar orbital (HOMO) whereas a negative S indicates electron trans-port through the lowest unoccupied molecular orbital (LUMO). Much work has been performed on investigating the low-bias con-ductance of molecular junctions using a variety of chemical linker groups 86–89, which, in principle, can change the nature of charge carriers through the junction. Molecular junction thermopower measurements can thus be used to determine the nature of charge carriers, correlating the backbone and linker chemistry with elec-tronic aspects of conduction.Experimental measurements of S and conductance were first reported by Ludoph and Ruitenbeek 90 in Au point contacts at liquid helium temperatures. This work provided a method to carry out thermoelectric measurements on molecular junctions. Reddy et al.91 implemented a similar technique in the STM geome-try to measure S of molecular junctions, although due to electronic limitations, they could not simultaneously measure conductance. They used thiol-terminated oligophenyls with 1-3-benzene units and found a positive S that increased with increasing molecular length (Fig. 4b). These pioneering experiments allowed the iden-tification of hole transport through thiol-terminated molecular junctions, while also introducing a method to quantify S from statistically significant datasets. Following this work, our group measured the thermoelectric current through a molecular junction held under zero external bias voltage to determine S and the con-ductance through the same junction at a finite bias to determine G (ref. 92). Our measurements showed that amine-terminated mol-ecules conduct through the HOMO whereas pyridine-terminatedmolecules conduct through the LUMO (Fig. 4b) in good agree-ment with calculations.S has now been measured on a variety of molecular junctionsdemonstrating both hole and electron transport 91–95. Although the magnitude of S measured for molecular junctions is small, the fact that it can be tuned by changing the molecule makes these experiments interesting from a scientific perspective. Future work on the measurements of the thermal conductance at the molecu-lar level can be expected to establish a relation between chemical structure and the figure of merit, which defines the thermoelec-tric efficiencies of such devices and determines their viability for practical applications.SpintronicsWhereas most of the explorations of metal–molecule–metal junc-tions have been motivated by the quest for the ultimate minia-turization of electronic components, the quantum-mechanical aspects that are inherent to single-molecule junctions are inspir-ing entirely new device concepts with no classical analogues. In this section, we review recent experiments that demonstrate the capability of controlling spin (both electronic and nuclear) in single-molecule devices 96. The early experiments by the groups of McEuen and Ralph 97, and Park 98 in 2002 explored spin-depend-ent transport and the Kondo effect in single-molecule devices, and this topic has recently been reviewed in detail by Scott and Natelson 99. Here, we focus on new types of experiment that are attempting to control the spin state of a molecule or of the elec-trons flowing through the molecular junction. These studies aremotivated by the appeal of miniaturization and coherent trans-port afforded by molecular electronics, combined with the great potential of spintronics to create devices for data storage and quan-tum computation 100. The experimental platforms for conducting DOI: 10.1038/NNANO.2013.91。
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azimuth angle in the cylindrical coordinate frame. The equation (1) in the cylindrical coordinate frame looks like as follows:
1 ∂ ∂ ∂2 1 ∂2 − − µσ B ( ρ, ϕ ) Ψ = E Ψ(2) ρ ቤተ መጻሕፍቲ ባይዱ + 2M ρ ∂ρ ∂ρ ∂z 2 ρ2 ∂ϕ2 2
This equation is equivalent to the following expression
2
−
2M
∆r − E Ψ(r) +
ˆ (r)G0 (r, r′)V ˆ (r′ )Ψ(r′)d3r′ = 0(7) V
Motion of the neutron along z is quasiclassic, therefore the quasiclassic expression for the Green function can be used: G0 (r, r′) = −i M ′ ′ ik (z ′ −z ) δ ( ρ − ρ ) θ ( z − z ) e 2k (8)
1
Quantum effects were studied for neutron motion in a gravitational trap [3]. Neutron motion in such a trap is one-dimensional. But in contrast to [3], transversal motion of neutrons in the ”magnetic tube” trap with respect to it axes is two-dimensional. As noted below, neutron motion in such a trap is determined by spinindependent effective potential energy, which is proportional to the magnetic field strength square. Thus, let us consider motion of the ultracold neutrons in the tubeshaped magnetic trap. The Schr¨ odinger equation, which describes the ultracold neutron in such a trap, is as follows:
2
−
2M
∆r − µσ B (r) Ψ(r) = E Ψ(r)
(1)
where M is the neutron mass, µ is the neutron magnetic moment, r is the coordinate of the neutron, B is the magnetic induction in the point r, σ = (σx, σy , σz ) are the Pauli matrices. Suppose the axes z to be directed along the tube axes. Neutron motion along the tube axes is quasi-classic. Tube length (dimension in direction z ) significantly exceeds its radius. Therefore, B (r) inside the tube can be considered as independent on z , i.e B (r) = B (x, y ) = B (ρ, ϕ), where ρ and ϕ are the radius and
Particle motion along z is free and is described by the quantum number kz . Therefore, the wave function of a neutron in the tube can be expressed as: Ψ(r) = Φ(ρ)eikz z =
Quantum effects at motion of ultracold neutrons in a magnetic trap are actively studied now. In particular, ”magnetic tube” traps [1] are used for investigation of such effects. According to [1], the periodic set of magnetic traps can be developed. Traps in the form of ”magnetic tube” are used for focusing of atomic beams and described in details in [2] on the basis of the classic motion equations for a particle, possessing the magnetic moment, in a magnetic field. But quantum effects, which appear at neutron motion in the magnetic trap, can not be described by classic motion equations. The typical radius of the magnetic trap, which is being designed, is ρ ∼ 10−4 cm [1]. Thus, due to large wavelength (λ ∼ 10−5 ÷ 10−6 cm), motion of the ultracold neutron in the magnetic trap in the direction, transversal to the axis of the magnetic tube, appears quantized.
∞ M ˆ −ikz ikz ′ ˆ Ψ( r ) − i ∆ − E V ( ρ ) V ( ρ ) e e Ψ(ρ, z ′ )dz ′ = 0(9) − r 2M 2k z 2
ˆ (ρ)V ˆ (ρ) = µ2 (σB )(σB ) = µ2 B 2 (ρ). It should be mentioned that V With the help (3) the equation (9) can be expressed as κ2 − ∆ − Φ(ρ) + Vef f (ρ)Φ(ρ) = 0 2M ρ 2M
M e where G0 (r, r′ ) = − 2π 2 |r −r′ | is the Green function of the equa-
ik|r −r ′ |
ˆ = −µσ B (r). Substitution of tion (2) and the potential energy V the expression for Ψ(r) (5) to the right part of equation (5) gives: Ψ(r) = ˆ (r′ )G0(r′ , r′′)V ˆ (r′′)Ψ(r′′)d3r′ d3 r′′ G0 (r, r′ )V (6)
2 2
(10)
where Vef f (ρ) = Mµ2 B 2 (ρ) 2 k (k + k ) z (11)
is the effective potential energy. According to (11) neutron motion in the magnetic tube trap, which is formed by the alternating magnetic field, is determined by the squared magnetic field strength and does not depend on the neutron spin direction. The equation (10) allows to find the eigenfunctions and the spectrum of eigenvalues of neutron energy in the trap. In the cylindrical coordinate frame the equation (10) reads as
Neutron channelling in a magnetic tube trap
arXiv:0708.3042v1 [nucl-th] 22 Aug 2007
V.G. Baryshevsky
Research Institute for Nuclear Problems, 11 Bobryiskaya str., 220050, Minsk, Belarus
3
of the neutron energy levels in the tube trap appears in the second order of the perturbation theory. For further analysis it is convenient to transform differential equation (2) to the homogeneous integral equation: Ψ(r) = ˆ (r′ )Ψr′d3 r′ G0 (r, r′ )V (5)
∞ m=−∞
Φm(ρ)eimϕ eikz z