呼吸机专用mos管 AP13P10D -13A -100V TO-252

1DescriptionThe AP13P10D uses advanced trench technology and design to provide excellent R DS(ON) with low gat e charge. It can be used in a wide variety of applications. It is ESD protested.General FeaturesV DS =-100V,I D =-13AR DS(ON) <170m @ V GS =-10V (Typ:145m ) Super high dense cell design Advanced trench process technology Reliable and ruggedHigh density celldesign for ultra low on-resistanceApplicationPower switch DC/DC convertersParameterSymbol LimitUnitDrain-Source Voltage V DS -100 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D-13 A Drain Current-Continuous(T C =100℃) I D (100℃)-9.2 A Pulsed Drain Current I DM -30 A Maximum Power Dissipation P D 40 W Derating factor0.32 W/℃ Single pulse avalanche energy (Note 5)E AS110 mJ Operating Junction and Storage Temperature RangeT J ,T STG-55 To 150℃1Product ID Pack MarkingQty(PCS) AP13P10DTO-252AP13P10D YYWW2500Thermal Resistance,Junction-to-Case (Note 2)RθJc 3.13℃/WParameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS V GS=0V I D=-250μA -100 - - V Zero Gate Voltage Drain Current I DSS V DS=-100V,V GS=0V - - 1 μA Gate-Body Leakage Current I GSS V GS=±20V,V DS=0V - - ±10 μA Gate Threshold Voltage V GS(th)V DS=V GS,I D=-250μA -1 -3 VDrain-Source On-State Resistance R DS(ON)V GS=-10V, I D=-16A - 145175 mΩForward Transconductance g FS V DS=-15V,I D=-5A 12 - - SInput Capacitance C lssV DS=-25V,V GS=0V,F=1.0MHz - 760 - PFOutput Capacitance C oss- 260 - PF Reverse Transfer Capacitance C rss- 170 - PFTurn-on Delay Time t d(on)V DD=-50V,I D=-10AV GS=-10V,R GEN=9.1 - 14 - nSTurn-on Rise Time t r- 18 - nS Turn-Off Delay Time t d(off)- 50 - nS Turn-Off Fall Time t f- 18 - nSTotal Gate Charge Q gV DS=-50V,I D=-10A,V GS=-10V - 25 - nCGate-Source Charge Q gs- 5 - nC Gate-Drain Charge Q gd- 7 - nC Diode Forward Voltage (Note 3)V SD V GS=0V,I S=-10A - - -1.2 V Diode Forward Current (Note 2)I S- - - -13 AReverse Recovery Time t rr TJ = 25°C, IF =-10Adi/dt = 100A/μs(Note3)- 35 - nSReverse Recovery Charge Qrr - 46 - nCForward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated byLS+LD)1. Repetitive Rating: Pulse width limited by maximum junction temperature.2. Surface Mounted on FR4 Board, t ≤ 10 sec.3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.4. Guaranteed by design, not subject to production5. E AS condition：Tj=25℃,V DD=-50V,V G=-10V,L=0.5mH,Rg=25223Typical Electrical and Thermal Characteristics (Curves)Vds Drain-Source Voltage (V)Figure 1 Output CharacteristicsVgs Gate-Source Voltage (V)Figure 2 Transfer CharacteristicsI D Drain Current (A)-Figure 3 Rdson- Drain CurrentT J-J unction Temperature(℃)Figure 4 Rdson-JunctionTemperatureQg Gate Charge (nC)Figure 5 Gate ChargeVsd Source-Drain Voltage (V)Figure 6 Source- Drain Diode Forward4Vds Drain-Source Voltage (V)T C Case Temperature(℃)Figure 7 Capacitance vs Vds Figure 9 Drain Current vs Case TemperatureVds Drain-Source Voltage (V)T J -Junction Temperature(℃)Figure 8 Safe Operation AreaFigure 10 Power De-ratingSquare Wave Pluse Duration(sec)Figure 11 Normalized Maximum Transient ThermalTO-252 Package Information5Attention1,Any and all APM Microelectronics products described or contained herein do not have specificationsthat can handle applications that require extremely high levels of reliability, such as life supportsystems, aircraft's control systems, or other applications whose failure can be reasonably expected toresult in serious physical and/or material damage. Consult with your APM Microelectronicsrepresentative nearest you before using any APM Microelectronics products described or containedherein in such applications.2,APM Microelectronics assumes no responsibility for equipment failures that result from usingproducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.3, Specifications of any and all APM Microelectronics products described or contained here instipulatethe performance, characteristics, and functions of the described products in the independent state, andare not guarantees of the performance, characteristics, and functions of the described products asmounted in the customer’s products or equipment. To verify symptoms and states that cannot beevaluated in an independent device, the customer should always evaluate and test devices mounted inthe customer’s products or equipment.4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliabilityproducts. However, any and all semiconductor products fail with some probability. It is possible thatthese probabilistic failures could give rise to accidents or events that could endanger human lives thatcould give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Suchmeasures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.5,In the event that any or all APM Microelectronics products(including technical data, services)described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from theauthorities concerned in accordance with the above law.6, No part of this publication may be reproduced or transmitted in any form or by any means,electronicor mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.8, Any and all information described or contained herein are subject to change without notice due toproduct/technology improvement,etc. When designing equipment, refer to the "Delivery Specification"for the APM Microelectronics product that you Intend to use.9, this catalog provides information as of Sep.2014. Specifications and information herein are subject to change without notice6。