MSN0650K台湾摩矽MOS管

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MOS管工作原理及芯片汇总

MOS管工作原理及芯片汇总一：MOS管参数解释MOS管介绍在使用MOS管设计开关电源或者马达驱动电路的时候，一般都要考虑MOS的导通电阻，最大电压等，最大电流等因素。

MOSFET管是FET的一种,可以被制造成增强型或耗尽型,P沟道或N沟道共4种类型，一般主要应用的为增强型的NMOS管和增强型的PMOS管，所以通常提到的就是这两种。

这两种增强型MOS管，比较常用的是NMOS.原因是导通电阻小且容易制造.所以开关电源和马达驱动的应用中，一般都用NMOS。

在MOS管内部，漏极和源极之间会寄生一个二极管。

这个叫体二极管，在驱动感性负载（如马达），这个二极管很重要，并且只在单个的MOS管中存在此二极管，在集成电路芯片内部通常是没有的。

MOS管的三个管脚之间有寄生电容存在,这不是我们需要的,而是由于制造工艺限制产生的。

寄生电容的存在使得在设计或选择驱动电路的时候要麻烦一些，但没有办法避免。

MOS管导通特性导通的意思是作为开关,相当于开关闭合.NMOS的特性，Vgs大于一定的值就会导通,适合用于源极接地时的情况(低端驱动),只要栅极电压达到一定电压（如4V或10V, 其他电压，看手册）就可以了。

PMOS的特性，Vgs小于一定的值就会导通，适合用于源极接VCC时的情况（高端驱动）。

但是，虽然PMOS可以很方便地用作高端驱动,但由于导通电阻大，价格贵，替换种类少等原因，在高端驱动中,通常还是使用NMOS.MOS开关管损失不管是NMOS还是PMOS，导通后都有导通电阻存在，因而在DS间流过电流的同时，两端还会有电压，这样电流就会在这个电阻上消耗能量，这部分消耗的能量叫做导通损耗。

选择导通电阻小的MOS管会减小导通损耗.现在的小功率MO S管导通电阻一般在几毫欧,几十毫欧左右MOS在导通和截止的时候，一定不是在瞬间完成的。

MOS两端的电压有一个下降的过程，流过的电流有一个上升的过程，在这段时间内，MOS管的损失是电压和电流的乘积,叫做开关损失。

MSN2018K台湾摩矽MOS管

General Features● V DS =200V,I D =18AR DS(ON) < 80m Ω @ V GS =10V (Typ:64m Ω)● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high E AS ● Excellent package for good heat dissipation ● Special process technology for high ESD capabilityApplication● Power switching application● Hard switched and high frequency circuits ● Uninterruptible power supplySchematic diagramMarking and pin assignmentTO-220-3L top viewPackage Marking and Ordering InformationDevice MarkingDeviceDevice PackageReel SizeTape widthQuantityTO-220-3L-- -Absolute Maximum Ratings (T C =25℃unless otherwise noted)Parameter Symbol LimitUnitDrain-Source Voltage V DS 200 V Gate-Source VoltageV GS ±20 V Drain Current-ContinuousI D 18 ADrain Current-Continuous(T C =100℃) I D (100℃) 13 A Pulsed Drain Current I DM 72 A Maximum Power Dissipation P D150 WSingle pulse avalanche energy(Note 5)E AS 250 mJOperating Junction and Storage Temperature RangeT J ,T STG -55 To 175 ℃MSN2018K200V(D-S) N-Channel Enhancement Mode Power MOS FETMSN2018K MSN2018K Lead FreePIN ConfigurationThermal CharacteristicThermal Resistance,Junction-to-Case (Note 2)R θJC1 /W ℃Electrical Characteristics (T C =25℃unless otherwise noted)ParameterSymbolCondition Min Typ Max UnitOff CharacteristicsDrain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 200 220 - V Zero Gate Voltage Drain Current I DSS V DS =200V,V GS=0V - - 1 μAGate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold VoltageV GS(th) V DS =V GS ,I D =250μA 2 3 4 V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =15A - 64 80 m Ω Forward Transconductance g FSV DS =50V,I D =11A 25 - - SDynamic Characteristics (Note4) Input Capacitance C lss 4200 PFOutput CapacitanceC oss 163 PFReverse Transfer Capacitance C rssV DS =25V,V GS =0V,F=1.0MHz75 PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 10 - nSTurn-on Rise Time t r - 18 - nS Turn-Off Delay Time t d(off) - 22 - nSTurn-Off Fall Time t fV DD =100V,I D =15A V GS =10V,R GEN =2.5Ω - 5 - nSTotal Gate Charge Q g 60 nCGate-Source Charge Q gs 19 nCGate-Drain ChargeQ gd V DS =100V,I D =15A,V GS =10V17 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SDV GS =0V,I S =11A - - 1.2 VDiode Forward Current (Note 2)I S - - - 18 A Reverse Recovery Time t rr - 90 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF = 15Adi/dt = 100A/μs (Note3)- 300 -nCForward Turn-On Timet onIntrinsic turn-on time is negligible (turn-on is dominated by LS+LD)Notes:1. Repetitive Rating: Pulse width limited by maximum junction temperature.2. Surface Mounted on FR4 Board, t ≤ 10 sec.3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.4. Guaranteed by design, not subject to production5. EAS condition ：Tj=25℃,V DD =50V,V G =10V,L=0.5mH,Rg=25ΩMSN2018KTest Circuit1）E AS test Circuit2）Gate charge test Circuit3）Switch Time Test CircuitTypical Electrical and Thermal Characteristics (Curves)Vds Drain-Source Voltage (V)Figure 1 Output CharacteristicsVgs Gate-Source Voltage (V)Figure 2 Transfer CharacteristicsI D - Drain Current (A)Figure 3 Rdson- Drain CurrentT J -Junction Temperature(℃)Figure 4 Rdson-JunctionTemperatureQg Gate Charge (nC)Figure 5 Gate ChargeVsd Source-Drain Voltage (V)Figure 6 Source- Drain Diode ForwardR d s o n O n -R e s i s t a n c e (m Ω)I D - D r a i n C u r r e n t (A )I D - D r a i n C u r r e n t (A )N o r m a l i z e d O n -R e s i s t a n c eV g s G a t e -S o u r c e V o l t a g e (V )I s - R e v e r s e D r a i n C u r r e n t (A )NormalizedBVdssCCapacitance(pF)Vds Drain-Source Voltage (V)Figure 7 Capacitance vs VdsVds Drain-Source Voltage (V)Figure 8 Safe Operation AreaT J-Junction Temperature(℃)Figure 9 BV DSS vs Junction TemperatureID-DrainCurrent(A)T J-Junction Temperature(℃)Figure 10 V GS(th)vs Junction Temperature r(t),NormalizedEffectiveTransientThermalImpedanceSquare Wave Pluse Duration(sec)Figure 11 Normalized Maximum Transient Thermal ImpedanceTO-220-3L Package InformationDimensions In Millimeters Dimensions In Inches SymbolMin.Max.Min.Max.A 4.400 4.600 0.173 0.181A1 2.250 2.550 0.089 0.100b 0.710 0.910 0.028 0.036b1 1.170 1.370 0.046 0.054c 0.330 0.650 0.013 0.026c1 1.200 1.400 0.047 0.0550.390 0.40410.250D 9.910E 8.9500 9.750 0.352 0.384E1 12.650 12.950 0.498 0.510e 2.540 TYP. 0.100 TYP.e1 4.980 5.180 0.196 0.204F 2.650 2.950 0.104 0.116H 7.900 8.100 0.311 0.319h 0.000 0.300 0.000 0.01213.400 0.508 0.528L 12.900L1 2.850 3.250 0.112 0.128 V 7.500 REF. 0.295 REF.Φ 3.400 3.800 0.134 0.150。

MSN04C0K台湾摩矽MOS管

General Features● V DS = 40V,I D =200AR DS(ON) < 4m Ω @ V GS =10V (Typ:3.3m Ω)● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high E AS ● Excellent package for good heat dissipationApplication● Power switching application● Hard switched and high frequency circuits ● Uninterruptible power supplySchematic diagramPackage Marking and Ordering InformationDevice MarkingDeviceDevice PackageReel SizeTape widthQuantityTO-220-3L---Absolute Maximum Ratings (T C =25℃unless otherwise noted)Parameter Symbol Limit UnitDrain-Source Voltage V DS 40 V Gate-Source Voltage V GS±20 V Drain Current-ContinuousI D 200 ADrain Current-Continuous(T C =100℃) I D (100℃) 140 A Pulsed Drain Current I DM 790 A Maximum Power Dissipation P D 260 WMarking and pin assignmentTO-220-3L top viewMSN04C0KMSN04C0K40V(D-S) N-Channel Enhancement Mode Power MOS FETDerating factor1.73 W/℃Single pulse avalanche energy (Note 5)E AS 1500 mJOperating Junction and Storage Temperature RangeT J ,T STG-55 To 175℃MSN04C0K Lead FreePIN ConfigurationMSP9435WThermal CharacteristicThermal Resistance,Junction-to-Case (Note 2)R θJc0.58/W ℃Electrical Characteristics (T C =25℃unless otherwise noted)Parameter Symbol ConditionMin Typ Max UnitOff CharacteristicsDrain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 40 - - V Zero Gate Voltage Drain Current I DSS V DS =40V,V GS =0V - - 1 μAGate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold VoltageV GS(th) V DS =V GS ,I D =250μA 2 3 4 V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =40A - 3.3 4.0 m Ω Forward Transconductance g FSV DS =5V,I D =40A 60 - - SDynamic Characteristics (Note4)Input Capacitance C lss - 9600 - PFOutput CapacitanceC oss - 890 - PFReverse Transfer Capacitance C rssV DS =30V,V GS =0V,F=1.0MHz- 530 - PF Switching Characteristics (Note 4)Turn-on Delay Timet d(on) - 21 - nSTurn-on Rise Time t r - 37 - nS Turn-Off Delay Time t d(off) - 75 - nSTurn-Off Fall Time t fV DD =30V,I D =1A V GS =10V,R GEN =2.5Ω - 40 - nSTotal Gate Charge Q g - 170 - nCGate-Source Charge Q gs - 36 - nCGate-Drain ChargeQ gd V DS =30V,I D =30A,V GS =10V- 56 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SDV GS =0V,I S =20A - - 1.2 VDiode Forward Current (Note 2)I S - - - 200 A Reverse Recovery Time t rr - 47.5 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF = 40Adi/dt = 100A/μs(Note3)- 66.3 -nCForward Turn-On Timet onIntrinsic turn-on time is negligible (turn-on is dominated by LS+LD)Notes:1. Repetitive Rating: Pulse width limited by maximum junction temperature.2. Surface Mounted on FR4 Board, t ≤ 10 sec.3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.4. Guaranteed by design, not subject to production5. EAS condition ：Tj=25℃,V DD =20V,V G =10V,L=0.5mH,Rg=25ΩTest circuit1）E AS test Circuits2）Gate charge test Circuit:3）Switch Time Test Circuit：Typical Electrical and Thermal Characteristics (Curves)Vds Drain-Source Voltage (V)Figure 1 Output CharacteristicsVgs Gate-Source Voltage (V)Figure 2 Transfer CharacteristicsI D - Drain Current (A)Figure 3 Rdson- Drain CurrentT J -Junction Temperature(℃)Figure 4 Rdson-JunctionTemperatureQg Gate Charge (nC)Figure 5 Gate ChargeVsd Source-Drain Voltage (V)Figure 6 Source- Drain Diode ForwardR d s o n O n -R e s i s t a n c e (m Ω)I D - D r a i n C u r r e n t (A )I D - D r a i n C u r r e n t (A )N o r m a l i z e d O n -R e s i s t a n c eV g s G a t e -S o u r c e V o l t a g e (V )I s - R e v e r s e D r a i n C u r r e n t (A )Vds Drain-Source Voltage (V)Figure 7 Capacitance vs VdsVds Drain-Source Voltage (V)Figure 8 Safe Operation AreaT J -Junction Temperature(℃)Figure 9 BV DSS vs Junction TemperatureT J -Junction Temperature(℃)Figure 10 Power De-ratingP o w e r D i s s i p a t i o n (w )C C a p a c i t a n c e (n F )Square Wave Pluse Duration(sec)Figure 11 Normalized Maximum Transient Thermal Impedancer (t ),N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c eI D - D r a i n C u r r e n t (A )TO-220-3L Package InformationDimensions In Millimeters Dimensions In Inches SymbolMin.Max.Min.Max.A 4.400 4.600 0.173 0.181A1 2.250 2.550 0.089 0.100b 0.710 0.910 0.028 0.036b1 1.170 1.370 0.046 0.054c 0.330 0.650 0.013 0.026c1 1.200 1.400 0.047 0.055D 9.910 10.250 0.390 0.404E 8.9500 9.750 0.352 0.384E1 12.650 12.950 0.498 0.510e 2.540 TYP. 0.100 TYP.e1 4.980 5.180 0.196 0.204F 2.650 2.950 0.104 0.116H 7.900 8.100 0.311 0.319h 0.000 0.300 0.000 0.01213.400 0.508 0.528L 12.900L1 2.850 3.250 0.112 0.128 V 7.500 REF. 0.295 REF.Φ 3.400 3.800 0.134 0.150。

MSN0620D台湾摩矽MOS管

MSN0620DGENERAL FEATURES● V DS =60V,I D =20AR DS(ON) <45m Ω @ V GS =10V● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high E AS ● Excellent package for good heat dissipation ● Special process technology for high ESD capabilityApplication● Power switching application● Hard Switched and High Frequency Circuits ● Uninterruptible Power SupplySchematic diagramMarking and pin AssignmentTO-252-2L top viewPackage Marking And Ordering InformationDevice MarkingDeviceDevice PackageReel SizeTape widthQuantity MSN0620D MSN0620D TO-252-2L--2500PCSAbsolute Maximum Ratings (TA=25℃unless otherwise noted)Parameter Symbol Limit UnitDrain-Source Voltage V DS 60 V Gate-Source Voltage V GS±20 V Drain Current-ContinuousI D 20 ADrain Current-Continuous(T C =100℃) I D (100℃) 14 A Pulsed Drain Current I DM60 A Maximum Power Dissipation P D40 W Derating factor0.27 W/℃Single pulse avalanche energy (Note 5)E AS 72 mJOperating Junction and Storage Temperature RangeT J ,T STG-55 To 175℃PIN ConfigurationLead Free60V(D-S) N-Channel Enhancement Mode Power MOS FETThermal Resistance,Junction-to-Case(Note 2)R θJC3.7/W ℃Electrical Characteristics (TA=25℃unless otherwise noted)Parameter Symbol ConditionMin Typ Max UnitOff CharacteristicsDrain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 60 - - V Zero Gate Voltage Drain Current I DSS V DS =60V,V GS =0V - - 1 μAGate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold VoltageV GS(th) VDS =V GS ,I D =250μA 1.0 - 3.0 V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =20A - 37 45 m Ω Forward Transconductance g FSV DS =5V,I D =4.5A 11 - - SDynamic Characteristics (Note4) Input Capacitance C lss - 500 - PFOutput CapacitanceC oss - 60 - PFReverse Transfer Capacitance C rssV DS =30V,V GS =0V,F=1.0MHz- 25 - PF Switching Characteristics (Note 4) Turn-on Delay Time t d(on) - 5 - nSTurn-on Rise Time t r - 2.6 - nS Turn-Off Delay Time t d(off) - 16.1 - nSTurn-Off Fall Time t fV DD =30V,I D =2A,R L =6.7Ω V GS =10V,R G =3Ω - 2.3 -nSTotal Gate Charge Q g - 12 nCGate-Source Charge Q gs - 4.1 nCGate-Drain ChargeQ gd V DS =48V,I D =15A,V GS =10V- 4.5 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SDV GS =0V,I S =20A - 1.2 VDiode Forward Current (Note 2)I S - - 20 A Reverse Recovery Time t rr - 35 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF =20Adi/dt = 100A/μs(Note3)- 53 - nCForward Turn-On Timet onIntrinsic turn-on time is negligible (turn-on is dominated by LS+LD)Notes:1. Repetitive Rating: Pulse width limited by maximum junction temperature.2. Surface Mounted on FR4 Board, t ≤ 10 sec.3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.4. Guaranteed by design, not subject to production5. EAS condition ：Tj=25℃,V DD =30V,V G =10V,L=0.5mH,Rg=25ΩThermal CharacteristicTest circuit1）E AS test Circuits2）Gate charge test Circuit:3）Switch Time Test Circuit：TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)Vds Drain-Source Voltage (V)Figure 1 Output CharacteristicsVgs Gate-Source Voltage (V)Figure 2 Transfer CharacteristicsI D - Drain Current (A)Figure 3 Rdson- Drain CurrentT J -Junction Temperature(℃)Figure 4 Rdson-JunctionTemperatureQg Gate Charge (nC)Figure 5 Gate ChargeVsd Source-Drain Voltage (V)Figure 6 Source- Drain Diode ForwardR d s o n O n -R e s i s t a n c e (m Ω)I D - D r a i n C u r r e n t (A )I D - D r a i n C u r r e n t (A )N o r m a l i z e d O n -R e s i s t a n c eV g s G a t e -S o u r c e V o l t a g e (V )I s - R e v e r s e D r a i n C u r r e n t (A )Vds Drain-Source Voltage (V)Figure 7 Capacitance vs VdsVds Drain-Source Voltage (V)Figure 8 Safe Operation AreaT J -Junction Temperature(℃)Figure 9 BV DSS vs Junction TemperatureT J -Junction Temperature(℃)Figure 10 V GS(th) vs Junction TemperatureI D - D r a i n C u r r e n t (A )C C a p a c i t a n c e (p F )Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedancer (t ),N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c eTO-252-2L Package Information。

MOS管主要参数及使用注意事项

MOS管主要参数及使用注意事项MOS管是一种常用的电力器件，广泛应用于电子电路和电源装置中。

本文将介绍MOS管的主要参数及使用注意事项。

1.MOS管的主要参数(1) 导通电阻（Rds(on)）：即MOS管导通时的电阻，也称为开态电阻。

导通电阻越小，MOS管导通时的功耗越小。

(2) 饱和电压（Vgs(sat)）：指MOS管在饱和区时，栅极与源极间的电压差。

饱和电压越小，MOS管的导通能力越好。

(3) 压降（Vds）：即栅极与源极间的电压差。

对于负载电路，要保证MOS管的压降在一定范围内，以避免过压损坏MOS管。

(4) 最大耐压（Vds(max)）：指MOS管能够承受的最大电压。

在设计电源装置时，要确保MOS管的最大耐压能够满足应用需求。

(5) 最大电流（Id(max)）：指MOS管能够承受的最大电流。

在设计电源装置时，要确保MOS管的最大电流能够满足应用需求。

(6) 开关速度（tf/td）：指MOS管从关态到开态或从开态到关态的时间。

开关速度越快，MOS管的响应时间越短，适用于高频应用。

(1)静电防护：MOS管对静电敏感，由于静电的高压可能导致器件损坏。

在操作MOS管时，应采取防静电措施，如穿戴静电消除器或接地腕带，以保护MOS管的正常工作。

(2)温度控制：MOS管的工作温度范围一般在-55℃至150℃之间。

当环境温度超过此范围时，应采取散热措施，如加散热片或风扇，以防止MOS管过热损坏。

(3)电流限制：在设计电路时，应根据MOS管的最大电流参数选择合适的负载电阻，以确保MOS管工作在安全电流范围内。

同时，在开关MOS 管时，要注意控制电流斜率，以减小MOS管的开关损耗。

(4) 输入电压（Vgs）控制：应根据具体的MOS管型号和应用需求，选择合适的输入电压（Vgs）范围，以保证MOS管正常开关。

(5)输出负载：要在MOS管的输出端加入合适的负载电路，以防止过压、过流等情况对MOS管造成损坏。

(6) 压降控制：在设计电源装置时，要合理选择MOS管的导通电阻，并确保输入电压（Vin）和输出电压（Vout）之间的压降在规定范围内，以保证电路的稳定工作。

mos管电压650v

mos管电压650vMos管电压650V摘要：本文将重点介绍Mos管电压650V的相关知识，包括其基本概念、应用领域以及特点等方面的内容。

引言Mos管是一种常见的功率器件，广泛应用于各个领域的电子设备中。

其中，Mos管电压650V是一种常见的规格，具有较高的电压承受能力，使其在高压环境下能够正常工作。

本文将对Mos管电压650V进行详细介绍。

一、Mos管电压650V的基本概念Mos管电压650V指的是该型号Mos管能够承受的最大工作电压为650V。

在电子设备中，工作电压是指器件能够正常工作的电压范围，超过该范围则会导致器件损坏或无法正常工作。

因此，Mos管电压650V的特点就是能够在650V的高压环境下稳定工作。

二、Mos管电压650V的应用领域由于Mos管电压650V具有较高的电压承受能力，因此在一些高压应用领域得到了广泛应用。

1. 电源领域：在电源变换器中，Mos管电压650V可以用于输出端的开关控制，实现电源的高效转换和稳定输出。

2. 电机控制领域：在各种电机控制系统中，Mos管电压650V可以用于电机的驱动和控制，提供稳定可靠的电源输出。

3. 照明领域：在高压LED照明系统中，Mos管电压650V可以用于LED的驱动和控制，实现高亮度、高效能的照明效果。

4. 电动汽车领域：在电动汽车的电池管理系统中，Mos管电压650V 可以用于电池充放电控制，保证电池系统的高效运行。

三、Mos管电压650V的特点Mos管电压650V具有以下特点：1. 高电压承受能力：Mos管电压650V能够承受高达650V的工作电压，适用于各种高压电子设备。

2. 低开启电压：Mos管电压650V的开启电压较低，可以减少能量损耗，提高系统效率。

3. 低导通电阻：Mos管电压650V的导通电阻较低，能够降低功耗，提高系统的稳定性和可靠性。

4. 快速开关速度：Mos管电压650V具有较快的开关速度，能够提高系统的响应速度和工作效率。

台湾摩矽半导体MOS FET型号

Vg_10v Vg_4.5v Vg_2.5v MSP0205A Single-P -4.1-128-0.7303750SOT-23MSP0205*Single-P -4.1-2012-0.7404560SOT-23MSP0220R Single-P -16-128-0.7171721DFN2X2 6L MSP2305*Single-P -4.1-2012-0.7323958SOT-23MSP2305A Single-P -4.1-1212-0.7252940SOT-23MSP2301*Single-P -3-2012-0.7506489SOT-23MSP0203Single-P -3-2012-0.7506489SOT-23MSP2301B *Single-P -2.4-2012-0.7100120175SOT-23MSP2321*Single-P -3.9-2010-0.75284570SOT-23MSP0304Single-P -3.9-2010-0.75314570SOT-23MSP4963W Single-P -6.5-2012-0.8142129SOP-8MSP0207W Single-P -6.5-2012-0.8122129SOP-8MSP3415E *Single-P -4-2010-0.55283444SOT-23MSP0204E Single-P -4-2010-0.65263749SOT-23MSP2303Single-P -3.9-3020-1.5708391SOT-23MSP3401*Single-P -4.2-3012-16072100SOT-23MSP3401L *Single-P -4.2-3012-1506495SOT-23-3L MSP3407*Single-P -4.1-3020-1.5557590SOT-23MSP0304Single-P -4.1-3020-1.5557590SOT-23MSP9435W *Single-P -5.1-3020-1.6487387SOP-8MSP0305W Single-P -5.2-3020-1.6477185SOP-8MSC4953W *Dual-P -5.1-3020-1.6487387SOP-8MSC0305W Dual-P -5.2-3020-1.6487387SOP-8MSP0307W *Single-P -6.5-3020-1.9335369SOP-8MSP4403W *Single-P -6.1-3012-1384976SOP-8MSP0306W Single-P -6.1-3012-1364772SOP-8MSP4435W *Single-P -9.1-3020-1.5152127SOP-8MSP0309W Single-P -9.5-3020-1.5142034SOP-8MSP0309WB Single-P -9.1-3020-1.5152127SOP-8MSP0312W Single-P -12-3020-1.5121835SOP-8MSP0315D Single-P -15-3020-1.58.51522TO-252MSP0325D Single-P -25-3020-1.561319TO-252MSP0405W Single-P -5.3-4020-1.867100120SOP-8MSP0405L Single-P -5.3-4020-1.867100135SOT-23-3L MSP0406W Single-P -6.2-4020-1.7162127SOP-8MSP0413W Single-P -13-4020-1.991517SOP-8MSP0430D Single-P -30-4020-1.9142130TO-252MSP0450D Single-P -50-4020-1.991623TO-252MSP0470D Single-P -70-4020-1.97.51319TO-252MSP0625K Single-P -25-6020-2.9546571TO-220MSP0630K Single-P -30-6020-2.9324355TO-220MSP0650K Single-P -55-6020-2.9233137TO-220MSP1013K Single-P -13-10020-1.9170190214TO-220MSP1013DSingle-P-13-10020-1.9170190214TO-252台湾摩矽半导体 MOS FET 型号参数列表VDS(V)VGS(V)Vth(V)RDS(ON)( Typ) mΩ at VGS Part Number Channel Package ID(A)MSP1018K Single-P-18-10020-1.98599106TO-220 MSP1018D Single-P-18-10020-1.98599106TO-252 MSP1030K Single-P-30-10020-2.8506573TO-220 MSN2302*Single-N 2.920100.75517892SOT-23 MSN2302A*Single-N 3.620100.75476080SOT-23 MSN2300*Single-N 3.320100.65364560SOT-23 MSN2300A*Single-N 5.820100.65162227SOT-23 MSN2312Single-N520100.65212733SOT-23 MSN0205Single-N 5.120100.65192632SOT-23 MSC9926W*Dual-N620120.7202736SOP-8 MSC8205S*Dual-N 5.820100.7172127SOT-23-6 MSC8205G*Dual-N619.5100.7172127TSSOP-8 MSN0212W Single-N1220100.8368SOP-8 MSN3420Single-N520120.7192235SOT-23 MSN0205Single-N520120.7192235SOT-23 MSN0211GE Single-N1120100.83 5.57TSSOP-8 MSN0214WE Single-N1420120.745 6.2SOP-8 MSN0207E Single-N 6.520100.7172126SOT-23 MSC0207GE*Dual-N720100.7111520TSSOP-8 MSN0207SE Single-N720100.7111520SOT-23-6 MSC0206GE Dual-N620100.7121722TSSOP-8 MSN0306Single-N 5.830120.9313441SOT-23 MSN3400*Single-N 5.830120.9313441SOT-23 MSN3400L*Single-N 5.830120.9253038SOT-23-3L MSN2304Single-N 3.63020 1.5476173SOT-23 MSN0304Single-N 3.63020 1.5476173SOT-23 MSN0310W*Single-N103020 1.67.51118SOP-8 MSN0311W Dual-N113020 1.6 6.51016SOP-8 MSN0330D*Single-N303020 1.9183647TO-252 MSN0350K Single-N503020 1.681015TO-220 MSN0350D*Single-N503020 1.681015TO-252 MSN0325R Single-N253020 1.681217DFN3X3 8L MSN0335RE Single-N353020 1.6 4.88.213.5DFN5X6 8L MSN03B0RE Single-N1003020 1.6 1.9 2.5 4.8DFN5X6 8L MSN0318W Single-N183020 1.6 5.57.511SOP-8 MSN0380D Single-N803020 1.6 5.57.511TO-252 MSN0310W*Single-N103020 1.67.51116.2SOP-8 MSN0311WE Single-N113010 1.571014SOP-8 MSN0460D Single-N604020 1.6111519TO-252 MSN0480D Single-N804020 1.8 5.4911TO-252 MSN04C0K Single-N20040203 3.369.8TO-220 MSN138Single-N0.225020 1.21Ω 1.2Ω* 1.4Ω*SOT-23 MSN7002*Single-N0.1156020 1.7 1.1Ω 1.3Ω* 1.5Ω*SOT-23 MSN06M2Single-N0.1156020 1.7 1.1Ω 1.3Ω* 1.5Ω*SOT-23 MSN7002E Single-N0.36020 1.71Ω 1.3Ω* 1.5Ω*SOT-23 MSN06M3E Single-N0.36020 1.71Ω 1.3Ω* 1.5Ω*SOT-23 MSN0603L Single-N36020 1.18595102SOT-23-3L MSN0603*Single-N36020 1.18595102SOT-23 MSN0603Y Single-N36020 1.58595102SOT-89 MSN0605W Single-N 4.56020 1.8385069SOP-8MSN0620D *Single-N 206020 1.8374660TO-252MSN0620Z Single-N 206020 1.8374663TO-251MSN0650Z Single-N 506020 1.8173051TO-251MSN0650K *Single-N 506020 1.8173051TO-220MSN0650D *Single-N 506020 1.8173051TO-252MSN0675D Single-N 75602039.11626TO-252MSN0675K Single-N 75602039.11626TO-220MSN06B0K *Single-N 10060203 5.71721TO-220MSN06B2K Single-N 12060253 6.51923TO-220MSN06B5K Single-N 15060203 3.61321TO-220MSN0860D *Single-N 6075203 6.82030TO-252MSN0860K *Single-N 8060253 6.51829TO-220MSN0880K *Single-N 807525 2.85 6.51829TO-220MSN0880M *Single-N 807525 2.85 6.51829TO-263MSN0880H Single-N 807525 2.85 6.51829TO-247MSN0898K Single-N 9880203 6.51829TO-220MSN08B2K Single-N 12080203 4.91117TO-2206.93020 1.922.54055-5-3020 1.84665786.93020 1.92834.543-7-30202334457MSN1001Single-N 110020 1.5190210240SOT-23MSN1002Single-N 210020 1.5380410480SOT-23MSN1006T Single-N 610020 1.8110150190TO-92MSN1010D Single-N 9.610020 1.8108130170TO-252MSN1017D Single-N 1710020 1.8567091TO-252MSN1060R Single-N 6010020 3.712.62136DFN5x6MSN1028K Single-N 2810020 3.2101726TO-220MSN1059K Single-N 59100203111824TO-220MSN10B0K Single-N 1001002039.91522TO-220MSN10B4K Single-N 14010020 3.25916TO-220MSN2004W Single-N 3.9200203567083SOP-8MSN2013K Single-N 13200203123154163TO-220MSN2018K Single-N 18200203647284TO-220MSN2024M Single-N 24200203647284TO-263MSN2024MA Single-N 2420020 1.5647284TO-263MSN2024D Single-N 24200203647284TO-252MSN2024DA Single-N 2420020 1.5627081TO-252MSN2024F Single-N 24200203647284TO-220F MSN2040F Single-N 4020020 3.236.44758TO-220F MSN2040K Single-N 4020020 3.236.44758TO-220MSN2060K Single-N 6020020 3.2243747TO-220MSN6001T Single-N 1600303900093009700TO-92MSN6001D Single-N 1600303900093009700TO-252MSN6002F Single-N 2600303350041004400TO-220F MSN6002Z Single-N 2600303350041004400TO-251MSN6002D Single-N 2600303350041004400TO-252MSN6004K Single-N 4600303100020002500TO-220MSN6004F Single-N 4600303100020002500TO-220F MSN6004Z Single-N 4600303100020002500TO-251MSN6004DSingle-N4600303100020002500TO-252N+P SOP-8MSC0305W N+P SOP-8MSC4606W *MSN6007K Single-N7600303640720840TO-220 MSN6007F Single-N7600303640720840TO-220F MSN6010K Single-N10600303390450580TO-220 MSN6010F Single-N10600303390450580TO-220F MSN6502F Single-N2650303350041004400TO-220F MSN6502Z Single-N2650303350041004400TO-251 MSN6502D Single-N2650303350041004400TO-252 MSN6504K Single-N4650303100020002500TO-220 MSN6504F Single-N4650303100020002500TO-220F MSN6504Z Single-N4650303100020002500TO-251 MSN6504D Single-N4650303100020002500TO-252 MSN6507F Single-N7650303500600650TO-220F MSN6508F Single-N8650303480550520TO-220F MSN6510K Single-N10650303390450580TO-220 MSN6510F Single-N10650303390450580TO-220F MSN6510M Single-N10650303390450580TO-263MORE Semiconductor Company Limited摩矽半导体有限公司。

MSN2300A摩矽MOS管规格书

MSN2300A摩矽MOS管规格书General Features● V DS = 20V,I D = 5.8AR DS(ON) < 35m ? @ V GS =2.5V R DS(ON) < 28m ? @ V GS =4.5V● High Power and current handing capability ● Lead free product is acquired ● Surface Mount PackageApplication●Uni-directional Load switch ●Bi-directional Load switchSchematic diagramMarking and pin AssignmentSOT-23 top viewPackage Marking and Ordering InformationDevice MarkingDevice Device PackageReel Size Tape width Quantity MSN2300ASOT-23180mm8 mm3000 unitsAbsolute Maximum Ratings (T A =25℃unless otherwise noted)Parameter Symbol Limit UnitDrain-Source Voltage V DS 20 V Gate-Source Voltage V GS±10 VDrain Current-Continuous I D 5.8 ADrain Current-Pulsed (Note 1) I DM 30 A Maximum Power DissipationP D 1.25 W Operating Junction and Storage Temperature RangeT J ,T STG-55 To 150℃Thermal CharacteristicThermal Resistance,Junction-to-Ambient (Note 2)R θJA100/W ℃MSN2300A20V(D-S) N-Channel Enhancement Mode Power MOS FETLead FreePIN ConfigurationGate-Body Leakage Current I GSS V GS =±10V,V DS =0V-- ±100 nAOn Characteristics(Note 3)Gate Threshold VoltageV GS(th) V DS =V GS ,I D =250μA 0.5 0.7 1.0 V V GS =2.5V, I D =4.0 A-2735m ?Drain-Source On-State Resistance R DS(ON) V GS =4.5V, I D =5.0A -20 28 m ? Forward Transconductance g FSV DS =5V,I D =6A - 25 - SDynamic Characteristics (Note4) Input Capacitance C lss - 515 - PFOutput CapacitanceC oss - 90 - PFReverse Transfer Capacitance C rss V DS =10V,V GS =0V,F=1.0MHz- 72 - PFSwitching Characteristics (Note 4) Turn-on Delay Time t d(on)- 3 - nSTurn-on Rise Time t r - 7.5 - nS Turn-Off Delay Time t d(off) - 20 - nSTurn-Off Fall Time t fV DD =10V, R L =1.7? V GS =10V,R GEN =3? - 6 - nSTotal Gate Charge Q g - 12 - nC Gate-Source Charge Q gs - 1 - nCGate-Drain ChargeQ gd V DS =10V,I D =6A,V GS =10V - 2 - nCDrain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SDV GS =0V,I S =1A - - 1.2 VDiode Forward Current(Note 2)I S- - 6 ANotes:1. Repetitive Rating: Pulse width limited by maximum junction temperature.2. Surface Mounted on FR4 Board, t ≤ 10 sec.3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2. %4. Guaranteed by design, not subject to productionElectrical Characteristics (T A =25℃unless otherwise noted) ParameterSymbolCondition Min Typ Max UnitOff CharacteristicsDrain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 20 22 - V Zero Gate Voltage Drain Current I DSS V DS =20V,V GS =0V - - 1 μATypical Electrical and Thermal CharacteristicsVoutFigure 1:Switching Test CircuitVds Drain-Source Voltage (V) Figure 3 Output CharacteristicsI D - Drain Current (A)Figure 5 Drain-Source On-Resistance V INV tFigure 2:Switching WaveformsVgs Gate-Source Voltage (V) Figure 4 Transfer CharacteristicsT J -Junction Temperature(℃) Figure 6 Drain-Source On-ResistanceR d s o n O n -R es i s t a n c e (m Ω)N o r m a l i z e d O n -R e s i s t a n c e I D - D r a i n C u r r e n t (A )I D - D r a i n C u r r e n t (A )Vgs Gate-Source Voltage (V)Figure7 Rdson vs VgsQg Gate Charge (nC)Figure 9 Gate ChargeVds Drain-Source Voltage (V)Figure 11 Capacitance vs VdsT J -Junction Temperature(℃)Figure 8 Power DissipationVds Drain-Source Voltage (V)Figure 10 Source- Drain Diode ForwardVds Drain-Source Voltage (V)Figure 12 Safe Operation AreaI D - D r a i n C u r r e n t (A )I s - R e v e r s e D r a i n C u r r e n t (A )V g s G a t e -S o u r c e V o l t a g e (V )C C a p a c i t a n c e (p F )R d s o n O n -R e s i s t a n c e (m Ω)P D P o w e r (W )Square Wave Pluse Duration(sec)Figure 13 Normalized Maximum Transient Thermal Impedancer (t ),N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c eSOT-23 Package InformationNotes1. All dimensions are in millimeters.2. Tolerance ±0.10mm (4 mil) unless otherwise specified3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.4. Dimension L is measured in gauge plane.5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.Dimensions in Millimeters SymbolMIN. MAX. A 0.900 1.150A1 0.0000.100A2 0.900 1.050b 0.300 0.500c 0.080 0.150D 2.800 3.000E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000L 0.550REF L1 0.300 0.500 θ 0°8°。

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General Features● V DS =60V,I D =50AR DS(ON) <20m Ω @ V GS =10V● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high E AS● Excellent package for good heat dissipation ● Special process technology for high ESD capabilityApplication● Power switching application● Hard switched and high frequency circuits ● Uninterruptible power supplySchematic diagramMarking and pin assignmentTO-220-3L top viewPackage Marking and Ordering InformationDevice MarkingDeviceDevice PackageReel SizeTape widthQuantityTO-220-3L-- -Absolute Maximum Ratings (T A =25℃unless otherwise noted)Parameter Symbol Limit UnitDrain-Source Voltage V DS 60 V Gate-Source Voltage V GS±20 V Drain Current-ContinuousI D 50 ADrain Current-Continuous(T C =100℃) I D (100℃) 35 A Pulsed Drain Current I DM 220 A Maximum Power Dissipation P D80 W Derating factor0.53 W/℃Single pulse avalanche energy (Note 5)E AS 115 mJMSN0650KMSN0650K MSN0650K60V(D-S) N-Channel Enhancement Mode Power MOS FETPIN ConfigurationLead FreeOperating Junction and Storage Temperature Range T J ,T STG-55 To 175 ℃Thermal CharacteristicThermal Resistance,Junction-to-Case(Note 2)R θJC1.88/W ℃Electrical Characteristics (TA=25℃unless otherwise noted)Parameter Symbol ConditionMin Typ Max UnitOff CharacteristicsDrain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 60 71 - V Zero Gate Voltage Drain Current I DSS V DS =60V,V GS =0V - - 1 μAGate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 nA On Characteristics (Note 3) Gate Threshold VoltageV GS(th) V DS =V GS ,I D =250μA 1.2 2.02.5 V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =20A - 17 20 m Ω Forward Transconductance g FSV DS =25V,I D =20A 24 - - SDynamic Characteristics (Note4)Input Capacitance C lss - 900 - PFOutput CapacitanceC oss - 104 - PFReverse Transfer Capacitance C rssV DS =25V,V GS =0V,F=1.0MHz- 33 - PF Switching Characteristics (Note 4)Turn-on Delay Time t d(on) - 25 - nSTurn-on Rise Time t r - 5 - nS Turn-Off Delay Time t d(off) - 50 - nSTurn-Off Fall Time t fV DD =30V,I D =2A,R L =15Ω V GS =10V,R G =2.5Ω - 6 - nSTotal Gate Charge Q g - 30 nCGate-Source Charge Q gs - 10 nCGate-Drain ChargeQ gd V DS =30V,I D =50A,V GS =10V- 5 nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) V SDV GS =0V,I S =40A - 1.2 VDiode Forward Current (Note 2)I S - - 50 A Reverse Recovery Time t rr - 50 - nS Reverse Recovery Charge Qrr TJ = 25°C, IF = 40Adi/dt = 100A/μs (Note3)- 100 -nCForward Turn-On Timet onIntrinsic turn-on time is negligible (turn-on is dominated by LS+LD)Notes:1. Repetitive Rating: Pulse width limited by maximum junction temperature.2. Surface Mounted on FR4 Board, t ≤ 10 sec.3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.4. Guaranteed by design, not subject to production5. EAS condition ：Tj=25℃,V DD =30V,V G =10V,L=0.5mH,Rg=25ΩMSN0650KTest circuit1）E AS test Circuits2）Gate charge test Circuit:3）Switch Time Test Circuit：MSN0650KTypical Electrical and Thermal Characteristics (Curves)Vds Drain-Source Voltage (V)Figure 1 Output CharacteristicsVgs Gate-Source Voltage (V)Figure 2 Transfer CharacteristicsI D - Drain Current (A)Figure 3 Rdson- Drain CurrentT J -Junction Temperature(℃)Figure 4 Rdson-JunctionTemperatureQg Gate Charge (nC)Figure 5 Gate ChargeVsd Source-Drain Voltage (V)Figure 6 Source- Drain Diode ForwardR d s o n O n -R e s i s t a n c e (m Ω)I D - D r a i n C u r r e n t (A )I D - D r a i n C u r r e n t (A )N o r m a l i z e d O n -R e s i s t a n c eV g s G a t e -S o u r c e V o l t a g e (V )I s - R e v e r s e D r a i n C u r r e n t (A )MSN0650KVds Drain-Source Voltage (V)Figure 7 Capacitance vs VdsVds Drain-Source Voltage (V)Figure 8 Safe Operation AreaT J -Junction Temperature(℃)Figure 9 BV DSS vs Junction TemperatureT J -Junction Temperature(℃)Figure 10 V GS(th) vs Junction TemperatureI D - D r a i n C u r r e n t (A )C C a p a c i t a n c e (p F )Square Wave Pluse Duration(sec)Figure 11 Normalized Maximum Transient Thermal Impedancer (t ),N o r m a l i z e d E f f e c t i v e T r a n s i e n t T h e r m a l I m p e d a n c eMSN0650KTO-220-3L Package InformationDimensions In Millimeters Dimensions In Inches SymbolMin.Max.Min.Max.A 4.400 4.600 0.173 0.181A1 2.250 2.550 0.089 0.100b 0.710 0.910 0.028 0.036b1 1.170 1.370 0.046 0.054c 0.330 0.650 0.013 0.026c1 1.200 1.400 0.047 0.055D 9.910 10.250 0.3900.404E 8.9500 9.750 0.352 0.384E1 12.650 12.950 0.498 0.510 e2.540 TYP.0.100 TYP.e1 4.980 5.180 0.196 0.204F 2.650 2.950 0.104 0.116H 7.900 8.100 0.311 0.319h 0.000 0.300 0.000 0.012L 12.900 13.400 0.508 0.528L1 2.850 3.250 0.112 0.128 V 7.500 REF.0.295 REF.Φ3.400 3.800 0.134 0.150MSN0650K。