DSR1M二极管规格书(常州星海)
超快恢复二极管 ES2B SMB(DO-214AA)系列规格书推荐
MAX 2.95 2.25 .20 .51 1.40 2.32 5.69 4.57 3.94
NOTE
MECHANICAL DATA
Case: JEDEC DO-214AA molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight :0.005 ounce, 0.138 grams
CJ
25.0
Typical thermal resistance (NOTE 3)
RθJA
Operating junction and storage temperature range TJ T, STG
20.0 -50 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.Pulse test: Pulse width 200 sec, Duty cycle 2%
50Ω
10Ω
25Vdc
1Ω
Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive
S8贴片二极管规格书(常州星海)
3.86(0.152) 3.56(0.145)
2.84(0.112) 2.54(0.100)
3.9(0.154) 3.7(0.146)
2.7(0.106) 2.6(0.102)
MECHANICAL DATA
.71(0.028) .50(0.020) .15(.006) MAX 1.35(.053) .94(.037) .135(.005) .127(.004) 0.6(.023) 0.5(.020) 1.15(.045) 1.05(.041)
【 领先的片式无源器件整合供应商 — 南京南山半导体有限公司 】
BAT42W-BAT43W
SCHOTTKY DIODES
SOD-123
1.80(.071) 1.40(.055) 1.65(.065) 1.55(.061)
FEATURES
Low forward voltage drop Fast switching time Surface mount package ideally suited for automatic insertion
100
TA=125 C
10 TA=75 C
CT, TOTAL CAPACITANCE (pF)
10
1.0
TA=25 C 0.1
TA=125 C f=1MHz
0.01 0 10 20 30 40
1.0 0 10 20 30 40
VR, INSTANTANEOUS REVERSE VOLTAGE.(V)
VR, REVERSE VOLTAGE.(V)
R
LING
JIE
STAR SEA ELECTRONICS CO.,LTD.
【领先的片式无源器件整合供应商—南京南山半导体有限公司】
DSS26二极管规格书(常州星海)
DSS22 THRU DSS210SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERReverse Voltage - 20 to 100 Volts Forward Current - 2.0 AmpereCase : JEDEC SOD-123FL molded plastic body Terminals : S olderable per MIL-STD-750,Method 2026Polarity : Color band denotes cathode end Mounting Position : AnyWeight :0.0007 ounce, 0.02 gramsFEATURESMECHANICAL DATAMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSRatings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.The plastic package carries Underwriters Laboratory Flammability Classification 94V-0Metal silicon junction,majority carrier conduction Low power loss,high efficiencyHigh forward surge current capability High temperature soldering guaranteed:250 C/10 seconds,0.375”(9.5mm) lead length,5 lbs. (2.3kg) tensionDSS22D22SYMBOLS UNITS DSS210D210Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.201420V RRM V RMS V DC I (AV)I FSM V F 2.040.00.70Operating junction temperature range Maximum repetitive peak reverse voltage Maximum RMS voltageMaximum DC blocking voltageMaximum average forward rectified current Peak forward surge current8.3ms single half sine-wave superimposed on rated load (JEDEC Method)Maximum instantaneous forward voltage at 2.0A Maximum DC reverse current T A =25 C at rated DC blocking voltage T A =100 C Typical junction capacitance (NOTE 1)I R 0.5C J T J T STG80Storage temperature rangeDSS23D23DSS25D25DSS24D24DSS26D26DSS28D28DSS27D27DSS29D2930213040284050355060426080568010070100704970906390VOLTS VOLTS VOLTS Amp AmpsVolts pF C mA C-65 to +150-65 to +125-65 to +15010.05.00.550.85220SOD-123FLDimensions in millimetersRATINGS AND CHARACTERISTIC CURVES DSS22 THRU DSS2100.2 0.4 0.6 0.8 1.0 1.1FIG. 3-TYPICAL INSTANTANEOUS FORWARDCHARACTERISTICSNUMBER OF CYCLES AT 60 HzFIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARDSURGE CURRENTFIG. 1- FORWARD CURRENT DERATING CURVEA V E R A G E F O R W A R D R E C T I F I E D C U R R E N T ,A M P E R E SI N S T A N T A N E O U S F O R W A R D C U R R E N T ,A M P E R E SP E A K F O R W AR D S U R G E C U R R E N T ,A M P E R E SINSTANTANEOUS FORWARD VOLTAGE,VOLTS1001010.10.010.001PERCENT OF PEAK REVERSE VOLTAGE,%FIG. 4-TYPICAL REVERSE CHARACTERISTICSI N S T A N T A N E O U S R E V E R S E C U R R E N T ,M I L L A M P E R E SAMBIENT TEMPERATURE, C REVERSE VOLTAGE,VOLTSFIG. 5-TYPICAL JUNCTION CAPACITANCEJ U N C T I O N C A P A C I T A N C E , p F1010010002000【领先的片式无源器件整合供应商—南京南山半导体有限公司】 |样品申请单模板。
SJ贴片二极管规格书
B5817W THRU B5819WSCHOTTKY DIODECase : Molded plastic bodyTerminals : Plated leads solderable per MIL-STD-750, Method 2026Polarity : Polarity symbols marked on caseMarking : B5817W:SJ, B5818W:SK, B5819W:SLFEATURESMECHANICAL DATAFor use in low voltage, high frequency inverters Free wheeling, and polanty protection applicationsElectrical ratings @T A =25C SYMBOLSTest conditions V (BR)Reverse breakdown voltageReverse voltage leakage currentForward voltageDiode capacitance PARAMETERMin.Max.Unit V V VI R =1mA 0.450.750.550.8750.60.9120191.5250500-65 to +15030Maximum ratings and electrical characteristics, Single diode @T A =25C SYMBOLSUNITS V RRM V RWM V R Peak repetitive peak reverse voltage Working peak reverse voltage DC Blocking voltage RMS Reverse voltageAverage rectified output currentPeak forward surge current @=8.3ms Repetitive peak forward current Power dissipationThermal resistance junction to ambient Storage temperatureNon-Repetitive peak reverse voltage T STG V RMV V A A A mW K/W C VB5818W3021V R(RMS)I O Pd PARAMETERI FSM R ΘJA I R203040pFI FRM B5817WB5819W 204014282040C D V F1mAV V VV R =4V,f=1.0MHzB5817W B5818W B5819W V R =20V V R =30V V R =40VB5817W B5818W B5819W I F =1A I F =3AB5817WB5818W B5819WSOD-123Dimensions in millimeters and (inches)RATINGS AND CHARACTERISTIC CURVES B5817W THRU B5819W0 10 100NUMBER OF CYCLES AT 60HzFIG. 2-MAXIMUM NON-REPETITIVE PEAKFORWARD SURGE CURRENTFIG. 1- FORWARD CURRENT DERATING CURVEA V E R A G E F O R W A R D C U R R E N T (A )10.89.07.25.43.61.8CASE TEMPERATURE( C )P E A K F O R W A R D S U R G E C U R R E N T (A )0 20 40 60 80 100 120 140FIG. 3- TYPICAL INSTANTANEOUSI NS T A N T A N E OU S F O R W A R D C U R R E N T (A )0 0.4 0.8 1.2 1.6INSTANTANEOUS FORWARD VOLTAGE(V)FIG. 4- TYPICAL REVERSE CHARACTERISTICSI N S T A N T A N E O U S R E V E R S E C U R R E N T (m A )0 20 40 60 80 100100101.00.10.010.001PERCENT OF RATED PEAK PEVERSE VOLTAGE (%)FIG. 5- TYPICAL JUNCTION CAPACITANCEJ U N C T I O N C A P A C I T A N C E (p F )REVERSE VOLTAGE (V)400100100.1 1 10 1000.01 1 10 1001001010.1T R A N S I E N T T H E R M A L I M P E D A N C E ( C /W )FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCEt--PULSE DURATION (sec.)【领先的片式无源器件整合供应商—南京南山半导体有限公司】 |样品申请单模板。
MM1Z2V0-MM1Z75规格书及承认书
日期（Date）2013.1.15检查项目Item 测试条件Condition 测试规格Specificati on 抽样数量允收标准AQL 判定合格卷数判定不合格卷数坏品总数RejVF IF＝10mA <0.9V 1000收1退100VZ IZT＝5mA 4-4.6V 1000收1退100IRVR=1V<5uA1000收1退1000收1退1000收1退100整盘数量0收1退100排 向0收1退100注塑管壳0收1退100刻 字0收1退100成型引脚0收1退100贴 带0收1退100空 位0收1退100其它外观0收1退100包装标贴内容（含RoHS标签）0收1退100标签与实物不符0收1退1审核：日期：2013.1.15返工 □批准：日期：RoHS检查：检测报告显示有害物质是否超标 是 □ 否 报告编号： CANEC1302011904备注（Remarks）返工情况： 生产确认：判别 合格 □ 不合格 □ 检查员：张秋燕已检合格数量：同意出厂杨奇林100100100已检不合格数量：特许出厂 □以卷为单位判断合格与否包装11100PCS外观性能100100订单号码（OrderNo.）电器性能测试参数（parameter）检收标准（Acceptance Criterion）备注RemarksSOD-123稳压二极管MM1Z4V3100100100SOD-123 品质保证报告SOD-123 QUALITY ASSURANCE REPORT文件编号：J-WI-Q-011（01）产品名称（part Name）规格（Type）批号（Lot No.）数量（Qty）100 PCS √√√四川蓝彩电子科技有限公司Sichuan Blue Colour Electronics Technology Co.,Ltd。
1n5819二极管的规格书
1n5819二极管的规格书1N5819二极管是一种高效能的二极管，常用于电源和开关电路中。
它具有以下规格：1. 最大正向电流：1A2. 最大反向电压：40V3. 正向压降：0.45V（在1A电流下）4. 反向泄漏电流：5μA（在25°C下）5. 反向恢复时间：15ns（在1A电流下）6. 封装类型：DO-411N5819二极管是一种快速恢复二极管，它能够迅速恢复到正常工作状态，从而提供更高的效率和更低的功耗。
这使得它非常适合于需要频繁开关的电路，比如开关电源和逆变器。
最大正向电流为1A，这意味着该二极管可以承受最大1A的电流，超过这个电流可能会损坏二极管。
因此，在设计电路时，需要确保电流不会超过1A，以保护二极管的正常工作。
最大反向电压为40V，这意味着该二极管可以承受最大40V的反向电压，超过这个电压可能会损坏二极管。
因此，在设计电路时，需要确保反向电压不会超过40V，以保护二极管的正常工作。
正向压降为0.45V，在1A电流下。
这意味着当1A的电流通过二极管时，会有0.45V的电压降。
这个电压降会导致功耗，因此在设计电路时需要考虑这个因素。
反向泄漏电流为5μA，在25°C下。
这意味着即使在反向电压下，二极管也会有少量的电流泄漏。
在设计电路时，需要将这个泄漏电流考虑在内，以确保电路的稳定性。
反向恢复时间为15ns，在1A电流下。
这意味着当二极管从正向导通状态切换到反向截止状态时，需要15ns的时间。
在设计高频电路时，需要考虑这个恢复时间，以确保电路的稳定性。
1N5819二极管采用DO-41封装，这是一种常见的二极管封装。
它具有简单的引脚结构，易于焊接和安装。
因此，在设计电路时，可以方便地使用1N5819二极管。
总结起来，1N5819二极管是一种高效能、快速恢复的二极管，常用于电源和开关电路中。
它具有最大正向电流1A、最大反向电压40V、正向压降0.45V（在1A电流下）、反向泄漏电流5μA（在25°C下）和反向恢复时间15ns（在1A电流下）的规格。
S7贴片二极管规格书(常州星海)
150
TA,AMBIENT TEMPERATURE( C)
VF INSTANTANEOUS FORWARD VOLTAGE (mV)
IR,INSTANTANEOUS REVERSE CURRENT(uA)
FIG. 3- TYPICAL REVERSE CHARACTERISTICS
1000 100
FIG. 4- TOTAL CAPACITANCE VS REVERSE VOLTAGE
.25(.010) MIN
Case: Molded plastic body Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: Polarity symbols marked on case Marking: BAT42W:S7, BAT43W:S8
100
TA=125 C
10 TA=75 C
CT, TOTAL CAPACITANCE (pF)
10
1.0
TA=25 C 0.1
TA=125 C f=1MHz
0.01 0 10 20 30 40
1.0 0 10 20 30 40
VR, INSTANTANEOUS REVERSE VOLTAGE.(V)
FIG. 2-TYPICAL FORWARD CHARACTERISTIC
100 TA=125 C
IFM.FORWARD CURRENT(mA)
80
TA=75 C 10
TA=25 C
60
40 TJ=125 C 20
TA=-25 C
1
0 0
0.1 0 200 400 600 800
FOSAN富信电子 二极管 MB1S-MB10S-产品规格书
安徽富信半导体科技有限公司ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MB1S-MB10SBridge Rectifier Diode 整流桥■Features 特点Glass passivated chip junction 玻璃钝化结High surge current capability 高浪涌电流能力Reflow Solder Temperature 220℃回流焊温度220度Package 封装:MBS■Maximum Rating 最大额定值(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号MB1S MB2S MB4S MB6S MB8S MB10S Unit 单位Peak Reverse Voltage 反向峰值电压V RRM 1002004006008001000V DC Reverse Voltage 直流反向电压V R(DC)1002004006008001000V RMS Reverse Voltage 反向电压均方根值V R(RMS)70140280420560700V Forward Rectified Current 正向整流电流I F 0.8A Peak Surge Current 峰值浪涌电流I FSM 30A Thermal Resistance J-A 结到环境热阻R θJA 90℃/WJunction and Storage Temperature 结温和储藏温度T J ,T stg150℃,-55to+150℃■Electrical Characteristics 电特性(T A =25℃unless otherwise noted 如无特殊说明，温度为25℃)Characteristic 特性参数Symbol 符号Min 最小值Typ 典型值Max 最大值Unit 单位Condition 条件Forward Voltage 正向电压降V F 1.01.1V I F =0.4A 0.8A Reverse Current (T A =25℃)反向漏电流(T A =125℃)I R 540uA V R =V RRM Diode Capacitance 二极管电容C D13pFV R =4V,f=1MHzANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MB1S-MB10S ■Typical Characteristic Curve典型特性曲线Figure1:Forward Current Derating Curve Figure2:Peak Forward Surge CurrentFigure3:Instantaneous Forward Characteristics Figure4:Reverse Leakage CharacteristicsFigure5:Junction Capacitance CharacteristicsANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO.,LTD.MB1S-MB10S ■Dimension外形封装尺寸。
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SUFACE MOUNT GENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
Case : JEDEC SOD-123FL molded plastic body over passivated chip Terminals : S olderable per MIL-STD-750,Method 2026
Polarity : Color band denotes cathode end Mounting Position : Any
Weight :0.006 ounce, 0.02 grams
Glass passivated device
Ideal for surface mouted applications FEATURES
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Metallurgically bonded construction
High temperature soldering guaranteed:
250 C/10 seconds,0.375”(9.5mm) lead length,5 lbs. (2.3kg) tension
Low reverse leakage
Note: 3.Thermal resistance from junction to ambient at 0.375” (9.5mm)lead length,P.C.B. mounted
ELECTRONICS CO.,LTD.
LING JIE
STAR SEA
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
DSR1A THRU DSR1M
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
1.Averaged over any 20ms period.
DSR1B SYMBOLS
10070100400280400200140200
600420600800560800
V RRM V RMS V DC I (AV)
I FSM V F 1.0
25.01.1Operating junction and storage temperature range
Maximum repetitive peak reverse voltage Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T A =65 C (NOTE 1)
Peak forward surge current
8.3ms single half sine-wave superimposed on rated load (JEDEC Method)Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current T A =25 C at rated DC blocking voltage T A =125 C Typical junction capacitance (NOTE 2)I R 10.050.0R θJA C J T J ,T STG
1804-55 to +150
Typical thermal resistance (NOTE 3)
UNITS
VOLTS VOLTS VOLTS Amp
Amps Volts pF C
A µK/W DSR1D DSR1G DSR1J
DSR1K S1B
S1D
S1G
S1J
S1K
T L =25 C
503550S1A
DSR1A 10007001000
DSR1M S1M
SOD-123FL
Dimensions in millimeters
RATINGS AND CHARACTERISTIC CURVES DSR1A THRU DSR1M
ELECTRONICS CO.,LTD.
LING JIE
STAR SEA
m A M P E R E S
C A P A C I T A N C E , p F
FIG.1 --TY PIC A L FOR WA R D C H A R A C TE R ISTIC FIG.2 -- TY PIC A L JU N C TION C APA C ITA N C E
IN ST AN T AN EO U S FOR WAR D VOLT AG E,mV R EVER SE VOLT AGE,VOLT S
I N S T A N T A N E O U S F O R W A R D C U R R E N T
100
1000
600
70080090010001100
5
10
15
20
25
30
35
40
10
9876543210 µA M P E R E S
A V E R A G E F O R W A R D C U R R E N T ,A M P E R E S
I N S T A N T A N E O U S R E V E R S E C U R R E N T
FIG.3 -- TYPICAL INSTANTANEOUS FIG.4 -- FOR WA R D D E R A TIN G C U R VE
AMBIEN T T EMPER AT U R E,
INSTANTANEOUS REVERSE VOLTAGE,V
10
100
REVERSE CHARACTERISTICS
1.0
0.8
0.6
0.4
0.2
0 25 50 75 100 125 150 175
【领先的片式无源器件整合供应商—南京南山半导体有限公司】 |样品申请单模板
第2页共2页。