2307三极管A7SHB芯片规格书PW2307
2SA1627长电三极管规格书
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -600 -600 -7 -1 1.25 100 150 -55~+150 Unit V V V A W ℃/W ℃ ℃
Dimensions In Millimeters Min. Max. 3.000 3.400 1.800 2.200 0.660 0.860 1.170 1.370 0.450 0.600 7.800 8.200 10.800 11.200 2.280 TYP. 4.460 4.660 15.300 15.700 1.300 1.500 4.040 4.240 2.700 2.900 3.100 3.300
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Transition frequency *Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%. Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1)*
小功率恒流源之三分立三极管电流取样反馈型
小功率恒流源之三分立三极管电流取样反馈型 摘要：本人原创分立三极管电流取样反馈型恒流源，特别适用于电流大且平均直流电平不稳定的负载，温漂、差异、和电源电压均对精度影响极小，精度（包括温漂）在9%以内； 1个点位连接调整，精度（包括温漂）可提高到3.3%以内。
输出电压下限≥1.0V（对管原型≥0.5V）。
电路由3个三极管约10个电阻1个电容组成。
一、电流取样反馈驱动型恒流源在买不到合适对管的情况下，为了适应电流较大的恒流源电流、且平均直流电平不稳定的情况，可以采用电流取样反馈驱动型恒流源，如图6所示。
电压Vs从电流取样电阻R06上取出，升压后Vf与参考电压Vr比较，如果恒流值偏小则Vf偏低，V02导通增大，给V03的B极增加注入电流使恒流值增大。
电流驱动原则上不受Vbe温漂影响、但受放大倍数影响；C01既抑制输出电压波动引起的恒流值波动，又在反馈环路上起延迟作用，抑制纳秒级的反馈延时引起的自激振荡。
二、精度计算和调整2.1、先看4个分压电阻的误差对恒流值精度的影响：根据对称性设定R04＝R01；设电阻精度全部是1%，分压比为a＝R01 / R02，分压比为b＝R04 / R05，设取样电压最大变化量为△Vs，很明显R02、R04最大、R01、R05最小时出现最大（Vr－Vf）或反之， 需要△Vs去弥补：Vc* R02 /（R01＋R02）＝Vs＋【Vc－Vs】*R05 /（R04＋R05），ÎVc /（1＋a）＝Vs＋【Vc－Vs】/（1＋b），ÎVs*【1－1 /（1＋b）】＝Vc*【1 /（1＋a）－1 /（1＋b）】，ÎVs＝Vc*（b－a）/（1＋a）/ b ，Vc* 1.01 /（1.01＋0.99* a）＝Vs＋△Vs＋【Vc－（Vs＋△Vs）】* 0.99 /（0.99＋1.01*b），Vc*【1.01*（0.99＋1.01*b）－0.99*（1.01＋0.99* a） 】＝（Vs＋△Vs）（1.01＋0.99* a）【（0.99＋1.01*b）－0.99】， Vc*【1.02*b－0.98a】＝（Vs＋△Vs）（1.01＋0.99* a）【1.01*b】＝（Vs＋△Vs）（1.02＋a）*b ，Vs＋△Vs＝Vc*（1.02*b－0.98*a）/（a＋1.02）/ b ，误差比例＝（Vs＋△Vs）/ Vs－1＝（1.02*b－0.98*a）*（1＋a）/【（a＋1.02）*（b－a）】－1＝0.02*a*（a＋b＋2）/【（a＋1.02）*（b－a）】＝0.02*【（Vc－Vr）/ Vr】*（a＋b＋2）/【（a＋1.02）*{（Vc－Vr）/（Vr－Vs）－（Vc－Vr）/ Vr } 】 ＝0.02*【（Vr－Vs）/ Vs 】*（a＋b＋2）/（a＋1.02）。
AOSHB,A0SHB三极管规格书
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01 10 -4
Single Pulse
10 -3
10 -2
10 -1
PDM
t1 t2
1. RthJA (t)=r (t) * RthJA 2. RthJA=See Datasheet 3. TJM - TA = PDM * RthJA (t) 4. Duty Cycle, D = t1/t2
VDSS
ID
RDS(on) (m-ohm) Max
5.4
30 @ VGS= 4.5V
20V
4.3
46 @ VGS= 2.5V
FEATURES
●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package.
2
1.75
VGS= 4.5V ID= 5.4A
1.5
1.25
1
0.75
0.5
0.25 -50 -25 0 25 50 75 100 125 Tj , Junction Temperature (°C)
Figure 4. On-Resistance Variation with Temperature
Drain-Source Diode Forward Current a
Maximum Power Dissipationa
TA=25°C TA=75°C
Operating Junction and Storage Temperature Range
大功率三极管2N3773参数资料规格
SPTECH SiliconNPN Power Transistor2N3773DESCRIPTION·Excellent Safe Operating Area·High DC Current Gain-h FE =15(Min)@I C =8A ·Low Saturation Voltage-:V CE(sat )=1.4V(Max)@I C =8A ·Complement to Type 2N6609APPLICATIONS·Designed for high power audio ,disk head positioners and other linear applications,which can also be used in power switching circuits such as relay or solenoid drivers,DC-DC converters or inverters.ABSOLUTE MAXIMUM RATINGS(T a =25℃)THERMAL CHARACTERISTICSSYMBOL PARAMETERMAX UNIT R th j-cThermal Resistance,Junction to Case1.17℃/WSYMBOL PARAMETERVALUE UNIT V CBO Collector-Base Voltage 160V V CEX Collector-Emitter Voltage 160V V CEO Collector-Emitter Voltage 140V V EBO Emitter-Base Voltage 7V I C Collector Current-Continuous 16A I CP Collector Current-Peak 30A I B Base Current-Continuous 4A I BP Base Current-Peak15A P C Collector Power Dissipation @T C =25℃150W T J Junction Temperature 150℃T stgStorage Temperature-65~150℃SPTECH Silicon NPN Power Transistor2N3773ELECTRICAL CHARACTERISTICST C=25℃unless otherwise specifiedSYMBOL PARAMETER CONDITIONS MIN MAX UNIT V CEO(SUS)Collector-Emitter Sustaining Voltage I C=50mA;I B=0140V V CEX(SUS)Collector-Emitter Sustaining Voltage I C=100mA;V BE(off)=1.5V;R BE=100Ω160V V CER(SUS)Collector-Emitter Sustaining Voltage I C=200mA;R BE=100Ω150V V CE(sat)-1Collector-Emitter Saturation Voltage I C=8A;I B=0.8A 1.4V V CE(sat)-2Collector-Emitter Saturation Voltage I C=16A;I B=3.2A 4.0V V BE(on)Base-Emitter On Voltage I C=8A;V CE=4V 2.2VI CEO Collector Cutoff Current V CE=120V;I B=010mAI EBO Emitter Cutoff Current V EB=7.0V;I C=05mAh FE-1DC Current Gain I C=8A;V CE=4V1560h FE-3DC Current Gain I C=16A;V CE=4V5I s/b Second Breakdown CollectorCurrent with Base Forward Biased V CE=100V,t=1.0s,Nonrepetitive 1.5A。
IRFR2307Z资料
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 42
MOSFET symbol
Fig 4. Typical Forward Transconductance vs. Drain Current
3
元器件交易网
IRFR/U2307Z
C, Capacitance(pF)
4000 3000 2000
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd
Fig 2. Typical Output Characteristics
1000
ID, Drain-to-Source Current(Α)
100 TJ = 175°C
10
TJ = 25°C 1
VDS = 20V
≤60µs PULSE WIDTH 0.1
2
4
6
8
10
VGS, Gate-to-Source Voltage (V)
IRFU2307Z
HEXFET® Power MOSFET
D
VDSS = 75V
RDS(on) = 16mΩ
ID = 42A
S
D-Pak IRFR2307Z
I-Pak IRFU2307Z
Max. 53 38 42 210 110 0.70 ± 20 100 140
B772三极管
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDTO-126C Plastic-Encapsulate TransistorsB772 TRANSIS TOR ( PNP ) FEA TURES·Low speed switchingMAXIMUM RATINGS(T a =25 unless otherwise noted )℃Symbol Para m eter Value UnitV CBO Collector-Base Voltage -40 VV CEO Collector-Emitter Voltage -30 V V EBO Emitter-Base Voltage -6 V I C Collector Current -Continuous -3 A P C Collector Dissipation1.25WT J , T stgJunction and Storage Temperature-55~+150 ℃ELECTRICAL CHARA C TERISTICS (Ta=25℃ unless other w ise specifie d )ParameterSymbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V (BR)CBO Ic=-100μA ,I E =0 -40V Collector-emitter breakdown voltage V (BR)CEOI C =-10 mA ,I B =0 -30VEmitter-base breakdown voltage V (BR)EBO I E = -100μA ,I C =0 -6V Collector cut-off current I CBO V CB = -40V ,I E =0 -1 μA Collector cut-off current I CEO V CE =-30V ,I B =0 -10 μA Emitter cut-off current I EBO V EB =-6V ,I C =0 -1 μA h FE (1)V CE = -2V, I C = -1A 60 400 DC current gainh FE (2)V CE =-2V, I C = -100mA32 Collector-emitter saturation voltage V CE (sat) I C =-2A,I B = -0.2A-0.5V Base-emitter saturation voltage V BE (sat) I C =-2A,I B = -0.2A-1.5V Transition frequencyf TV CE =-5V, I C =-0.1Af=10MHz50MHzCLASSIFICATION OF h FE (1)Rank R O Y GR Range60-120 100-200160-320200-400C,Aug,2012【南京南山半导体有限公司 — 长电三极管选型资料】2550751001251500.000.250.500.751.001.251.50101001000-10-100-1000101001000C O L L E C T O R P O W E RD I S S I P A T I O N P c (W )AMBIENT TEMPERATURE T a()℃P c —— T aCOLLECTOR CURRENT I C(mA)I Cf T ——3000D C C U R RE N T G A I N hF ECOLLECTOR CURRENT I C (mA)I h ——C O L L E C T O R C U R R E N T I C (A )COLLECTOR-EMITTER VOLTAGE V CE (V)V —— I COLLECTOR CURRENT I C (mA)C O L L E C T O R -E M I T T E R S A T U R A T I O N V O L T A G E V C E s a t (m V )-COLLECTOR CURRENT I C (mA)B A S E -E M I T T E R S A T U R A T I O N V O L T A G E V B E s a t (m V )IV BEsat ——V CB / V EBC / C ——REVERSE VOLTAGE V (V) C A P A C I T A N C E C (p F )B772Typical CharacteristicsC O L L E C T O R C U R R E N T I C (m A )BASE-EMITTER VOLTAGE V BE(mV)V BE —— I CC,Aug,2012Inner Box: 240 mm ×165mm ×９５mmLabel on the Inner BoxOuter Box: 525 mm × 360mm × 262mmLabel on the Outer BoxQA LabelSeal the box with the tapeStamp “EMPTY” on the empty box。
三极管的型号命名及简易测试
三极管的型号命名及简易测试2011-04-29 19:28:18| 分类：电子器件类| 标签：三极管基极集电极管子|字号大中小订阅ali8840整理晶体三极管是无线电爱好者使用频率最高的器件之一，每个爱好者都应十分熟悉晶体管的符号、型号、命名方法，并且能十分熟练地掌握测试方法。
三报管按内部特性可分为PNP型和NPN 型两种，按材料不同可分为硅管和锗管，按封装材料不同可分为金属管、塑封管等。
在电路图中有两种符号分别表示，PNP管(不论锗管还是硅管)均用图一符号表示，NPN型管(不论锗管还是硅管)均用图二符号表示。
注意图中箭头所指的方向。
在电路图中三极管符号旁边一般都会标出管子的型号，如3AX38，3AG12等。
通过这些型号可查阅到三极管的具体参数。
晶体管按最大集电极允许耗散功率(Pcm)的大小，可分为小功率晶体管(Pcm在300毫瓦下)；中功率晶体管(Pcm大干300毫瓦但小于1瓦)及丈功率晶体管(大于1瓦) 小功率晶体管外形目前常见的如图三所示，其金属壳封装的管脚排列位置如图四所示，硅酮塑封小功率三报管的管脚排列位置，以标记面(平面或倒有平面)对着自已看，如图五所示，其中按(a)所示位置排列有3DG6、3DG201、202、204、205，3CG35，3DX203、202，3CX201、202等，进口管子2SC1473NC、2SC1573A、2SA683NC、2SC536NP、2SA6359等按(b)所示排列，2SA628A等按(c)所示排列。
按国家标准，国产普通晶体三极管型号由五个部分组成，如表一所示。
如3AG1C为PNP型高频小功率三报管，3DG6为NPN型硅高频小功率三板管。
而日本生产的普通晶体管的命名方法与我国不同，它也有五个部分组成，如表二所示。
如，2SA561为PNP高频管，可用国产3CG23C代用，2SC383为NPN高频管，可用国产3DG4C代用。
目前，市场上进有日电公司产JE9000系列中、小功率三极管，其中9011、9013、9014、9016、9018为硅NPN 三极管，9012、8015为硅PNP三极管，而9012与9013(Icm0.5A、BVceo20V、Pcm0.6W)及9014与9015(Icm0.1A、BVceo46V、Pcm≥O.45W)可配对组成互补放大管。
A733
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTDFEATURE ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)ParameterSymbol Test conditions M in T ypM ax U nitCollector-base breakdown voltage V (BR)CBO I C = -50uA,I E =0 -60 V Collector-emitter breakdown voltage V (BR)CEO I C = -1mA , I B =0 -50 V Emitter-base breakdown voltage V (BR)EBO I E = -50uA, I C =0-5VCollector cut-off current I CBO V CB = -60V, I E 0 -0.1 uAEmitter cut-off current I EBO V EB = -5 V, I C 0 -0.1 uA DC current gainh FEV CE = -6V, I C = -1mA90 200 600 Collector-emitter saturation voltage V CE (sat) I C = -100mA, I B =- 10mA -0.18 -0.3 V Base-emitter voltage V BEV CE =-6V,I C =-1.0mA -0.58-0.62-0.68VTransition frequencyf T V CE =-6V,I C =-10mA100 MHzCollector output capacitance C ob V CB =-10V,I E =0,f=1MH Z 6 pF Noise figureNFV CE =-6V,I C =-0.3mA, Rg=10k Ω,f=100H Z20 dBCLASSIFICATION OF h FERank R Q P K Range90-180 135-270 200-400 300-6003. BASEA,May,2011【南京南山半导体有限公司 — 长电三极管选型资料】 【南京南山半导体有限公司 — 长电三极管选型资料】 【南京南山半导体有限公司 — 长电三极管选型资料】Sponge strip2000 pcsSponge strip The top gasketLabel on the Inner BoxPlastic bagLabel on the Outer BoxInner Box: 333 mm ×162mm ×43mmOuter Box: 350 mm × 340mm × 250mmQA LabelSeal the box with the tapeStamp “EMPTY” on the empty boxInner Box: 240 mm ×165mm ×９５mmLabel on the Inner BoxOuter Box: 525 mm × 360mm × 262mmLabel on the Outer BoxQA LabelSeal the box with the tapeStamp “EMPTY” on the empty box。
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
PW2307
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
PW2307_1.1
无锡平芯微
4
Wuxi PWChip Semi Technology CO., LTD
Fig.4 Gate-Charge Characteristics
1.8 1.4 1.0 0.6
0
50
100
150
TJ , Junction Temperature (℃ ) Fig.6 Normalized RDSON vs. TJ
PW2307_1.1
无锡平芯微
3
Wuxi PWChip Semi Technology CO., LTD
0.104
0.116
0.037(BSC)
0.071
0.079
0.012
0.024
0°
8°
PW2307_1.1
无锡平芯微
5
1.500
1.700
2.650
2.950
0.950(BSC)
1.800
2.000
0.300
0.600
0°
8°
Dimensions In Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
0.059
0.067
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ RθJA RθJAC
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Case 1 (t ≤10s)
PW2307
40 ID=-4 A
30
20
10
1
2
3
4
5
-VGS (V)
0.2 0.F2ig.2 On-Resistance vs. Gate-Source
-
0
50
100
150
-50
TJ ,Junction Temperature ( ℃ ) Fig.5 Normalized VGS(th) vs. TJ
PACKAGE DESCRIPTION
PW2307
Symbol
A A1 A2 b c D E1 E e e1 L θ
Dimensions In Millimeters
Min.
Max.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
Rating -20 ±12 -7.1 -4.8 -23.8
1 -55 to 150 -55 to 150
125 80
Units V V A A A W ℃ ℃ ℃/W ℃/W
PW2307_1.1
无锡平芯微
1Hale Waihona Puke 无锡平芯微Wuxi PWChip Semi Technology CO., LTD
Typical Characteristics
Wuxi PWChip Semi Technology CO., LTD
PW2307
代理 深圳夸克微科技
P-Channel Enhancement Mode MOSFET
GENERAL DESCRIPTION
The PW2307 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
FEATURES
VDS = -20V ID =-7A RDS(ON) < 20mΩ @ VGS=-4.5V Available in a 3-Pin SOT23-3 Package
SOT-23-3L (TOP VIEW)
D
S
G
D
G
S
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)