XB5352G 贴片SOT23-5 单节锂电池充电保护芯片 电源管理IC

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IP5353规格书

IP5353规格书

IP5353规格书
IP5353 是一款集成QC2.0 / QC3.0/SCP输出快充协
议、 FCP/AFC输入输出快充协议、TYPE-C/PD2.0/PD3.0
输入输出协议、PPS输出协议、BC1.2/Apple/三星的DCP协议,同时集成同步升/降压转换器、电池充电管理、电池电量指示
等多功能的电源管理SOC,为快充移动电源提供完整的电源
解决方案。

可同时支持多个USB口输出。

IP5353 最多支持4路USB口快充,单独使用任何一个USB口,均可以支持快充。

多口输出及边充边放时,只支持
5V电压档位。

IP5353 的高集成度与丰富功能,在应用时仅需极少的外
围器件,只需一个电感即可实现降压与升压功能。

有效减小整体方案的尺寸,降低BOM成本。

IP5353 的同步开关升压系统可提供最大22.5W
(*********)输出能力。

IP5353输出轻载时,芯片可自动
进入休眠状态。

IP5353 的同步开关充电系统,可支持18W充电,电池端
充电电流高达5.0A。

内置芯片温度、电池温度和输入电压控
制环路,智能调节充电电流。

IP5353 内置TYPE-C&PD2.0/PD3.0协议。

IP5353 支持4颗LED电量显示、照明功能、按键功能。

IP5353 支持I2C控制接口。

非隔离降压型恒压芯片

非隔离降压型恒压芯片

非隔离降压型恒压芯片是一种常见的电源管理芯片,主要用于实现AC-DC转换功能。

这种芯片通常采用BUCK拓扑结构,常见于小家电控制板电源以及工业控制电源供电。

以DK5320为例,该芯片是一款超低功耗非隔离降压型AC-DC恒压转化芯片,内置650V 高压功率MOSFET,适用于85VAC~265VAC全电压范围。

通过采用多种控制模式相结合的电压电流控制技术,DK5320可以实现优异的恒压特性的同时省略外部多余电容,极大的节约了系统成本和体积。

此外,其轻载环境下的BURST模式可以有效减小开关损耗,提高整机工作效率,同时优化系统轻载噪声。

另一款芯片MT8803R3也是一款非隔离降压型恒压驱动芯片,适用于85Vac~264Vac全电压输入的非隔离电源。

MT8803R3内部集成高压功率开关管和电流采样电阻,无需外部环路补偿电容即可实现优异的恒压特性。

ip5356芯片 照明led 原理

ip5356芯片 照明led 原理

ip5356芯片照明led 原理
照明LED是一种广泛应用于现代照明领域的新型光源。

它具有高亮度、高效率、低能耗等优点,成为了取代传统照明方式的重要选择。

而IP5356芯片作为照明LED的驱动芯片,起到了至关重要的作用。

我们来了解一下IP5356芯片的工作原理。

IP5356芯片是一种专门用于LED照明的集成电路芯片,它能够接受来自外部控制器的指令,并将电能转化为适合LED工作的电流和电压输出。

其内部集成了多个电路模块,包括电源管理模块、PWM调光模块、温度保护模块等。

在LED照明中,IP5356芯片的主要作用是对LED进行电源管理和控制。

它能够根据外部控制器发送的指令,提供恰当的电流和电压给LED,以实现不同亮度和颜色的调节。

通过PWM调光模块,IP5356芯片可以精确地控制LED的亮度,从而满足不同场景下的照明需求。

IP5356芯片还具备温度保护功能。

LED在工作过程中会产生一定的热量,如果温度过高,会影响LED的寿命和性能。

IP5356芯片能够监测LED的温度,并在温度超过设定值时自动降低电流输出,以保护LED不受损坏。

总的来说,IP5356芯片作为照明LED的驱动芯片,起到了关键的作用。

它通过接收外部指令,提供恰当的电流和电压给LED,实现LED的亮度和颜色调节。

同时,它还具备温度保护功能,能够保护
LED的寿命和性能。

IP5356芯片的应用使得LED照明更加智能化和可靠,为人们提供了更好的照明体验。

富满电子 FM6211系列500mA LDO稳压器说明书

富满电子 FM6211系列500mA LDO稳压器说明书

FM6211系列(文件编号:S&CIC1194)500mA LDO稳压器概述FM6211系列是以CMOS工艺制造的高精度,高纹波抑制比,低噪音,超快响应低压差线性稳压器。

FM6211系列稳压器内置固定的参考电压源,误差修正电路,限流电路,相位补偿电路以及低内阻的MOSFET,达到高纹波抑制,低输出噪音,超快响应低压差的性能。

FM6211系列兼容体积比钽电容更小的陶瓷电容,而且不需使用0.1μF的By-pass电容,更能节省空间。

FM6211系列的高速响应特性能应付负载电流的波动,所以特别适合使用于手持及射频产品上。

通过控制芯片上的CE脚可将输出关断,在关断后的功耗只有1μA以下。

特点最大输出电流:500mA(V IN=5V,V OUT=3.3V)低压差:100mV@I OUT=100mA工作电压范围:2V~6.0V输出电压范围:1.2V~5.0V高输出精度:±2%低静态电流:50uA(TYP.)关断电流:0.1uA(TPY.)高纹波抑制比:70dB@1KHz低输出噪声:50uVrms输入稳定性好:0.05%(TYP.)封装形式:SOT23-5产品应用手机无绳电话设备照相机FM6211系列(文件编号:S&CIC1194)500mA LDO稳压器主要参数及工作特性FM6211系列(文件编号:S&CIC1194)500mA LDO稳压器FM6211系列(文件编号:S&CIC1194)500mA LDO稳压器FM6211系列(文件编号:S&CIC1194)500mA LDO稳压器注:1.V OUT(T):规定的输出电压2.V OUT(E):有效输出电压(即当I OUT保持一定数值,V IN=(V OUT(T)+1.0V)时的输出电压。

3.Vdif:V IN1–V OUT(E)’V IN1:逐渐减小输入电压,当输出电压降为V OUT(E)的98%时的输入电压。

无线路由器用户手册说明书

无线路由器用户手册说明书

目錄I.產品資訊 (1)I-1. 包裝內容物 (1)I-2. LED狀態 (2)I-3. 背面面板 (3)I-4. 安全資訊 (4)II.安裝 (5)II-1. 無線分享器模式 (8)II-2. 無線基地台模式 (13)II-3. 無線訊號延伸器模式 (18)II-4. 無線橋接器模式 (25)II-5. 無線公共熱點模式 (31)II-6. WPS設定 (39)II-7. 恢復出廠預設值 (39)III.網頁式設定介面 (40)III-1. 登入 (40)III-2. 儲存設定值 (42)III-3. 主功能表 (43)III-3-1. 狀態 (44)III-3-2. 安裝精靈 (45)III-3-3. 網際網路/WISP (47)III-3-3-1. WAN 設定 (48)III-3-3-1-1. 動態IP (48)III-3-3-1-2. 靜態IP (49)III-3-3-1-3. PPPoE (50)III-3-3-1-4. PPTP (52)III-3-3-1-5. L2TP (54)III-3-3-2. DDNS (56)III-3-4. 區域網路 (57)III-3-5. 2.4GHz 無線及5GHz 無線 (60)III-3-5-1. 基本 (60)III-3-5-1-2. WEP (64)III-3-5-1-3. WPA / WPA2 加密技術 (65)III-3-5-1-4. WPA RADIUS (66)III-3-5-2. 訪客/多重無線網路 (67)III-3-5-3. WPS (70)III-3-5-4. 存取控制 (71)III-3-5-5. 無線排程 (73)III-3-6. 防火牆 (74)III-3-6-1. URL Blocking (74)III-3-6-2. 存取控制 (75)III-3-6-3. DMZ (79)III-3-6-4. DoS (80)III-3-7. QoS (82)III-3-7-1. QoS (82)III-3-7-2. iQoS (85)III-3-8. 進階 (87)III-3-8-1. 靜態路由 (87)III-3-8-2. Port Forwarding (88)III-3-8-3. Virtual Server (89)III-3-8-4. 2.4GHz 無線 (91)III-3-8-5. 5GHz 無線 (92)III-3-8-6. IGMP (92)III-3-8-7. UPnP (93)III-3-9. 管理平台 (94)III-3-9-1. 時區 (94)III-3-9-2. 密碼 (95)III-3-9-3. 遠端存取 (95)III-3-9-4. 備份/還原 (96)III-3-9-5. 升級 (96)III-3-9-6. 重新開機 (97)III-3-9-8. 已啟用的DHCP 終端 (98)III-3-9-9. 統計 (98)IV.附錄 (99)IV-1. 設定您的IP 位址 (99)IV-1-1. 如何檢查您的電腦是否使用動態IP 位址 (100)IV-1-1-1. Windows XP (100)IV-1-1-2. Windows 7 (101)IV-1-1-3. Windows 8 (104)IV-1-1-4. Mac OS (108)IV-1-2. 如何修改您電腦的IP 位址 (110)IV-1-2-1. Windows XP (110)IV-1-2-2. Windows 7 (111)IV-1-2-3. Windows 8 (114)IV-1-2-4. Mac (118)IV-1-3. 如何尋找您的網路安全性金鑰 (121)IV-1-3-1. Windows 7 (121)IV-1-3-2. Mac (123)IV-1-4. 如何尋找您分享器的IP 位址 (126)IV-1-4-1. Windows XP / 7 (126)IV-1-4-2. Windows 8 (128)IV-1-4-3. Mac (130)IV-2. 連接至Wi-Fi 網路 (132)IV-3. 疑難排解 (134)I.產品資訊I-1. 包裝內容物在您開始使用本產品之前,請檢查包裝中是否有任何物品短缺,並請洽原購買經銷商或店家協助:網路線快速安裝指南電源變壓器CD-ROMBR-6208ACI-2. LED狀態I-3. 背面面板天線 重設/WPS 按鈕天線I-4. 安全資訊為確保本產品及其使用者的安全,請閱讀並依下列安全性指示說明操作。

xb7602锂电池保护芯片参数

xb7602锂电池保护芯片参数

xb7602锂电池保护芯片参数简介x b7602锂电池保护芯片是一款常用于锂电池管理系统中的保护芯片,能够有效保护锂电池的安全和寿命。

本文将详细介绍x b7602锂电池保护芯片的参数及其作用。

1.功能特点-适用于锂离子电池(L i-io n)、聚合物锂离子电池(L i-p o ly)及锂铁磷酸电池(L iFe P O4)等各种类型的锂电池。

-支持单体锂电池电压范围广,可适应不同容量和电压的锂电池。

-具备过电压保护功能,当锂电池电压超过设定范围时,及时切断充电或放电路径,避免过充或过放,从而保护锂电池的稳定运行。

-具备过流保护功能,当电流超过设定阈值时,及时切断充电或放电路径,防止过大电流对锂电池造成损害。

-具备温度保护功能,可以监测电池温度,并在温度过高或过低时采取相应措施,保持锂电池在正常温度范围内工作。

-支持放电过流短路保护功能,当发生短路时,及时切断电池与负载之间的连接,避免过大电流通过短路处,造成电池或周边电路损坏。

-具备平衡充电功能,可以对锂电池内单体进行均衡充电,确保每个单体电压一致,提高整个电池组的使用寿命。

2.技术参数-工作电压范围:3.0V-4.5V-充电电压范围:4.2V-5.0V-过压保护电压:4.25V±0.05V-放电过流保护电流:25A±3A-温度保护范围:-20°C-+85°C-短路保护延时:250μs3.锂电池保护流程1.检测锂电池电压,如果电压低于过压保护电压,则跳至步骤5。

2.检测锂电池电压,如果电压高于过压保护电压,则切断充电路径。

3.检测锂电池电压,如果电压高于过压保护电压,则切断放电路径。

4.均衡充电,对锂电池内各单体进行充电均衡。

5.检测锂电池电压,如果电压低于欠压保护电压,则切断放电路径。

6.检测电池温度,如果温度过高或过低,则切断充放电路径。

4.应用领域-电动汽车及混合动力汽车-电动工具和便携设备-家用电器和消费电子产品-太阳能和风能存储系统-医疗设备和无线通信设备总结x b7602锂电池保护芯片是一款功能强大的锂电池保护芯片,具备过压保护、过流保护、温度保护、短路保护和均衡充电功能。

xb6042电路原理

xb6042电路原理

XB6042电路原理主要是基于单节锂电池保护芯片的工作原理。

它包含高级功率MOSFET、高精度电压检测电路和延迟电路。

该芯片采用DFN1X1x0.37-4封装,使其在有限的电池组空间中成为理想的解决方案。

XB6042系列具有电池应用中所需的所有保护功能,包括过充、过放电、过电流和负载短路保护等。

其工作原理有以下几个方面:
1. 过充保护:当电池组过充时,XB6042会关闭功率MOSFET,以防止电池过度充电而受到损害。

2. 过放电保护:当电池组电压过低时,XB6042会自动关闭功率MOSFET,以防止电池过度放电而受到损害。

3. 过电流保护:当电池组出现过电流时,XB6042会自动关闭功率MOSFET,以防止电池过度电流而受到损害。

4. 负载短路保护:当电池组负载短路时,XB6042会自动关闭功率MOSFET,以防止电池受到损害。

5. 高精度电压检测:XB6042具有高精度电压检测功能,能够准确地检测电池组的电压,从而确保电池的安全使用。

6. 延迟电路:XB6042还包含延迟电路,它可以在一定时间内自动恢复电池组的正常使用,以提高电池的使用寿命。

XB6042是一种高度集成的锂电池保护芯片,能够有效地保护电
池组免受各种不利因素的影响,确保电池组的安全和稳定使用。

XB5358A

XB5358A

XB5358A—锂电池保护
XB5358系列产品是高集成度的锂电池保护解决方案。

XB5358集成了先进的功率管,高精度电压检测和延迟电路。

XB5358为SOT23-5L的封装形式,并且只需要一个外围器件,厚度小于0.8mm,非常适合用于空间有限的电池保护板应用,特别是一些超薄应用。

XB5358具有过充保护,过放保护,过流保护、短路保护和支持反接等完整的锂电池保护功能,并且具有非常小的工作电流,可以延长电池的寿命。

主要技术参数● 反接保护功能● 集成先进的45m?R DS(ON)功率管● 电压检测精度50mV●只需要一个外置电容● 过温保护功能● 过充电流保护功能● 两段电流保护功能:过流保护短路保护● 充电检测功能● 0V电池充电功能● 内部设定延迟时间● 3.0uA的工作电流● 0.1uA的关机耗电流● SOT23-5L的封装产品应用● 手机● MP3 ● MP4 ● GPS●蓝牙耳机●电动玩具■封装引脚说
明■应用电

产品方案特点:单芯片SOT23-5 封装;集成保护IC,对管MOS,周边器件;仅需一个外围器件,支持反接;负极保护,用户无需更换产品测试设备。

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XB5352G ____________________________________________________________________________________________________________________________ One Cell Lithium-ion/Polymer Battery Protection ICGENERAL DESCRIPTIONThe XB5352G product is a high integration solution for lithium-ion/polymer battery protection.XB5352G contains advanced power MOSFET, high-accuracy voltage detection circuits and delay circuits.XB5352G is put into an ultra-smallSOT23-5 package and only oneexternal component makes it an ideal solution in limited space of battery pack. XB5352G has all the protection functions required in the battery application including overcharging, overdischarging, overcurrent and load short circuiting protection etc. The accurate overcharging detection voltage ensures safe and full utilization charging. The low standby current drains little current from the cell while in storage.The device is not only targeted for digital cellular phones, but also for any otherLi-Ion and Li-Poly battery-powered information appliances requiring long-term battery life. FEATURES·Protection of Charger Reverse Connection·Protection of Battery Cell Reverse Connection·Integrate Advanced Power MOSFET with Equivalent of 45mΩ R SS(ON)·Ultra-small SOT23-5 Package ·Only One External Capacitor Required·Over-temperature Protection ·Overcharge Current Protection ·Two-step Overcurrent Detection: -Overdischarge Current-Load Short Circuiting·Charger Detection Function·0V Battery Charging Function- Delay Times are generated inside ·High-accuracy Voltage Detection ·Low Current Consumption- Operation Mode: 2.8μA typ.- Power-down Mode: 1.5μA typ. ·RoHS Compliant and Lead (Pb) FreeAPPLICATIONSOne-Cell Lithium-ion Battery PackLithium-Polymer Battery PackFigure 1. Typical Application CircuitORDERING INFORMATIONNote: “YW” is manufacture date code, “Y” means the year, “W” means the weekPIN CONFIGURATIONFigure 2. PIN ConfigurationPIN DESCRIPTIONABSOLUTE MAXIMUM RATINGS(Note: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may affect device reliability.)ELECTRICAL CHARACTERISTICSTypicals and limits appearing in normal type apply for T A= 25o C, unless otherwise specifiedFigure 3. Functional Block Diagram FUNCTIONAL DESCRIPTIONThe XB5352G monitors the voltage and current of a battery and protects it from being damaged due to overcharge voltage, overdischarge voltage, overdischarge current, and short circuit conditions by disconnecting the battery from the load or charger. These functions are required in order to operate the battery cell within specified limits.The device requires only one external capacitor. The MOSFET is integrated andits R SS(ON) is as low as45mΩtypical. Normal operating modeIf no exception condition is detected, charging and discharging can be carried out freely. This condition is called the normal operating mode.Overcharge ConditionWhen the battery voltage becomes higher than the overcharge detection voltage (V CU) during charging under normal conditionand the state continues for the overcharge detection delay time (t CU) or longer, theXB5352G turns the charging control FEToff to stop charging. This condition is called the overcharge condition. The overcharge condition is released in the following two cases:1, When the battery voltage drops below the overcharge release voltage (V CL), the XB5352G turns the charging control FET on and returns to the normal condition.2, When a load is connected and discharging starts, the XB5352G turns the charging control FET on and returns to the normal condition. The release mechanism is as follows: the discharging current flows through an internal parasitic diode of the charging FET immediately after a load is connected and discharging starts, and the VM pin voltage increases about 0.7 V (forward voltage of the diode) from the GND pin voltage momentarily. TheXB5352G detects this voltage and releases the overcharge condition. Consequently, in the case that the battery voltage is equal to or lower than the overcharge detection voltage (V CU), the XB5352G returns to the normal condition immediately, but in the case the battery voltage is higher than the overcharge detection voltage (V CU),the chip does not return to the normal condition until the battery voltage drops below the overcharge detection voltage (V CU) even if the load is connected. In addition, if the VM pin voltage is equal to or lower than the overcurrent 1 detection voltage when a load is connected and discharging starts, the chip does not return to the normal condition.Remark If the battery is charged to a voltage higher than the overcharge detection voltage (V CU) and the battery voltage does not drops below the overcharge detection voltage (V CU) even when a heavy load, which causes an overcurrent, is connected, the overcurrent 1 and overcurrent 2 do not work until the battery voltage drops below the overcharge detection voltage (V CU). Since an actual battery has, however, an internal impedance of several dozens of mΩ, and the battery voltage drops immediately after a heavy load which causes an overcurrent is connected, the overcurrent 1 and overcurrent 2 work. Detection of load short-circuiting works regardless of the battery voltage.Overdischarge ConditionWhen the battery voltage drops below the overdischarge detection voltage (V DL) during discharging under normal condition and it continues for the overdischarge detection delay time (t DL) or longer, theXB5352G turns the discharging control FET off and stops discharging. This condition is called overdischarge condition. After the discharging control FET is turned off, the VM pin is pulled up by the R VMD resistorbetween VM and VDD in XB5352G. Meanwhile when VM is bigger than 1.5V (typ.) (the load short-circuiting detection voltage), the current of the chip is reduced to the power-down current (I PDN). This condition is called power-down condition. The VM and VDD pins are shorted by theR VMD resistor in the IC under the overdischarge and power-down conditions. The power-down condition is released when a charger is connected and the potential difference between VM and VDD becomes 1.3 V (typ.) or higher (load short-circuiting detection voltage). At this time, the FET is still off. When the battery voltage becomes the overdischarge detection voltage (V DL) or higher (see note), the XB5352G turns the FET on and changes to the normal condition from the overdischarge condition.Remark If the VM pin voltage is no less than the charger detection voltage (V CHA), when the battery under overdischarge condition is connected to a charger, the overdischarge condition is released (the discharging control FET is turned on) as usual, provided that the battery voltage reaches the overdischarge release voltage (V DU) or higher. Overcurrent ConditionWhen the discharging current becomes equal to or higher than a specified value (the VM pin voltage is equal to or higher than the overcurrent detection voltage)during discharging under normal condition and the state continues for the overcurrent detection delay time or longer, theXB5352G turns off the discharging control FET to stop discharging. This condition is called overcurrent condition. (The overcurrentincludes overcurrent, or load short-circuiting.)The VM and GND pins are shorted internally by the R VMS resistor under the overcurrent condition. When a load is connected, the VM pin voltage equals the VDD voltage due to the load.The overcurrent condition returns to the normal condition when the load is released and the impedance between the B+ and B- pins becomes higher than the automatic recoverable impedance. When the load is removed, the VM pin goes back to the GND potential since the VM pin is shorted the GND pin with the R VMS resistor. Detecting that the VM pin potential is lower than the overcurrent detection voltage(V IOV), the IC returns to the normal condition.Abnormal Charge Current DetectionIf the VM pin voltage drops below the charger detection voltage (V CHA) during charging under the normal condition and it continues for the overcharge detection delay time (t CU) or longer, the XB5352G turns the charging control FET off and stops charging. This action is called abnormal charge current detection. Abnormal charge current detection works when the discharging control FET is on and the VM pin voltage drops below the charger detection voltage (V CHA). When an abnormal charge current flows into a battery in the overdischarge condition, the XB5352G consequently turns the charging control FET off and stops charging after the battery voltage becomes the overdischarge detection voltage and the overcharge detection delay time (t CU) elapses.Abnormal charge current detection is released when the voltage difference between VM pin and GND pin becomes lower than the charger detection voltage (V CHA) by separating the charger. Since the 0 V battery charging function has higher priority than the abnormal charge current detection function, abnormal charge current may not be detected by the product with the 0 V battery charging function while the battery voltage is low.Load Short-circuiting conditionIf voltage of VM pin is equal or below short circuiting protection voltage (V SHORT), the XB5352G will stop discharging and battery is disconnected from load. The maximum delay time to switch current off is t SHORT. This status is released when voltage of VM pin is higher than short protection voltage (V SHORT), such as when disconnecting the load.Delay CircuitsThe detection delay time for overdischarge current 2 and load short-circuiting starts when overdischarge current 1 is detected. As soon as overdischarge current 2 or load short-circuiting is detected over detection delay time for overdischarge current 2 or load short- circuiting, the XB5352G stops discharging. When battery voltage falls below overdischarge detection voltage due to overdischarge current, the XB5352G stop discharging by overdischarge current detection. In this case the recovery of battery voltage is so slow that if battery voltage after overdischarge voltage detection delay time is still lower than overdischarge detection voltage, the XB5352G shifts to power-down.Figure 4. Overcurrent delay time0V Battery Charging Function (1) (2) (3) This function enables the charging of a connected battery whose voltage is 0 V by self-discharge. When a charger having 0 V battery start charging charger voltage(V0CHA) or higher is connected between B+ and B- pins, the charging control FET gate is fixed to VDD potential. When the voltage between the gate and the source of the charging control FET becomes equal to or higher than the turn-on voltage by the charger voltage, the charging control FET is turned on to start charging. At this time, the discharging control FET is off and the charging current flows through the internal parasitic diode in the discharging control FET. If the battery voltage becomes equal to or higher than the overdischarge release voltage (V DU), the normal condition returns. Note(1) Some battery providers do not recommend charging of completely discharged batteries. Please refer to battery providers before the selection of 0 V battery charging function.(2) The 0V battery charging function has higher priority than the abnormal charge current detection function. Consequently, a product with the 0 V battery charging function charges a battery and abnormal charge current cannot be detected during the battery voltage is low (at most 1.8 V or lower).(3) When a battery is connected to the IC for the first time, the IC may not enter the normal condition in which discharging is possible. In this case, set the VM pin voltage equal to the GND voltage (short the VM and GND pins or connect a charger) to enter the normal condition.TIMING CHART1.Overcharge and overdischarge detectionV V CU -V V DL +V V DL ONONCHARGEV DDV ov1V SS V VMFigure5-1 Overcharge and Overdischarge Voltage Detection2.Overdischarge current detectionV CU V CU -V HC V DL +V DH V DLONDISCHARGEOFFV DDV V ov2V ov1V SS(1)(4)(1)(1)(1)(4)(4)Figure5-2 Overdischarge Current DetectionRemark: (1) Normal condition (2) Overcharge voltage condition (3) Overdischarge voltage condition (4)Overcurrent condition3.Charger DetectionVV CU-VV DL+VV DLONV DDVMV SSVFigure5-3 Charger Detection4.Abnormal Charger DetectionVV CU-VV DL+VV DLONONCHARGEV DDVMV SSVFigure5-4 Abnormal Charger DetectionRemark: (1) Normal condition (2) Overcharge voltage condition (3) Overdischarge voltage condition (4)Overcurrent conditionTYPICAL CHARACTERISTICS(Test based on XB5352G version, V BAT = 3.6V, T A= 25 C unless otherwise specified)Internal FET On-Resistance vs. Junction TemperatureTYPICAL APPLICATIONAs shown in Figure 6, the bold line is the high density current path which must be kept as short as possible. For thermal management, ensure that these trace widths are adequate. C1 is a decoupling capacitor which should be placed as close as possible to XB5352G.Fig 6 XB5352G in a Typical Battery Protection CircuitPrecautions• Pay attention to the operating conditions for input/output voltage and load current so that the power loss in XB5352G does not exceed the power dissipation of the package.• Do not apply an el ectrostatic discharge to this XB5352G that exceeds the performance ratings of the built-in electrostatic protection circuit.XB5352G______________________________________ ____________________________________________________ ________ _________ ____________ - 11 -PACKAGE OUTLINESOT23-5 PACKAGE OUTLINE AND DIMENSIONS。

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