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基于MEMS技术的微型力传感器设计与制备

基于MEMS技术的微型力传感器设计与制备

基于MEMS技术的微型力传感器设计与制备引言:近年来,随着科技的迅猛发展,MEMS(Micro-Electro-Mechanical Systems,微电子机械系统)技术在各个领域都得到了广泛的应用。

其中,微型力传感器是MEMS技术的重要应用之一。

本文将着重探讨基于MEMS技术的微型力传感器的设计与制备的关键技术及应用前景。

1. 微型力传感器的发展历程1.1 传感器的定义和分类传感器是一种将感知的物理量转化为可测量电信号的设备。

根据测量的物理量不同,传感器可分为温度、压力、湿度、力量等不同分类。

1.2 微型力传感器的发展传统力传感器体积庞大,不利于微型化系统的集成。

而基于MEMS技术的微型力传感器由于具有体积小、重量轻、响应速度快等优势,逐渐成为研究的热点。

2. 微型力传感器的原理与设计2.1 弹性元件的选择弹性元件是微型力传感器的核心组件,常见的有梁型、薄膜型、基于微弯曲磁致伸缩等类型。

2.2 传感电路的设计传感电路用于将微型力传感器感知到的力量转化为电信号,并进行放大、滤波等处理。

3. 基于MEMS技术的微型力传感器的制备3.1 微加工工艺微加工工艺是基于MEMS技术制备微型力传感器的关键步骤,主要包括沉积、光刻、腐蚀、薄膜制备等技术。

3.2 材料的选择微型力传感器所使用的材料需具备良好的弹性特性、低应力漂移以及与加工工艺的兼容性等特点。

4. 微型力传感器的应用案例4.1 工业领域微型力传感器可用于测量机械设备的受力状态,辅助排除故障,提高生产效率。

4.2 医疗领域微型力传感器可用于测量人体肌肉力量的变化,帮助康复和运动训练。

5. 微型力传感器的未来发展方向5.1 小型化随着科技的进步,人们对传感器的需求越来越高。

未来的微型力传感器将会更小巧精致,便于集成和使用。

5.2 多功能化传统的微型力传感器往往只能单一测量力量,而未来的微型力传感器有望实现多功能化,例如结合温度、湿度等传感功能。

5.3 智能化未来的微型力传感器将更加智能化,能够通过无线传输数据,实时监测和分析力量的变化。

mems传感器芯片开发流程

mems传感器芯片开发流程

mems传感器芯片开发流程mems传感器芯片是一种基于微机电系统(Micro-Electro-Mechanical Systems,MEMS)技术的传感器芯片,其具有体积小、功耗低、响应速度快等优点,被广泛应用于移动设备、智能家居、汽车电子等领域。

本文将介绍mems传感器芯片的开发流程。

一、需求分析在开发mems传感器芯片之前,首先需要进行需求分析。

开发者需要明确传感器芯片的功能和性能要求,包括测量范围、精度、响应时间、耐受环境等。

通过与客户、市场调研等渠道获取需求信息,为后续开发工作提供指导。

二、设计阶段设计阶段是mems传感器芯片开发的关键阶段。

首先,需要进行传感器的物理设计,包括结构设计、材料选择、工艺流程等。

其次,进行电路设计,包括信号放大、滤波、AD转换等电路设计。

最后,进行软件设计,包括传感器芯片的驱动程序编写、数据处理算法设计等。

三、制造流程制造mems传感器芯片的制造流程复杂且精细。

首先,需要进行晶圆制备,即将mems结构图案转移到硅晶圆上。

然后,进行工艺加工,包括刻蚀、光刻、沉积等工艺步骤,以形成mems结构。

接着,进行封装和测试,将mems芯片封装到封装盒中,并进行功能测试和可靠性测试。

四、验证和调试mems传感器芯片制造完成后,需要进行验证和调试。

验证主要包括功能验证和性能验证,通过实验和测试验证传感器芯片的测量精度、响应速度等性能指标是否符合设计要求。

调试主要是对传感器芯片的驱动程序进行优化和修正,以确保其稳定可靠地工作。

五、批量生产经过验证和调试,mems传感器芯片可以进行批量生产。

在批量生产过程中,需要建立完善的生产工艺和质量控制体系,确保产品的一致性和稳定性。

同时,进行产品的测试和筛选,将不合格品剔除,以保证产品质量。

六、应用和维护mems传感器芯片开发完成后,可以应用于各个领域。

在应用过程中,需要根据具体场景进行传感器的布置和安装,同时进行数据采集和处理。

此外,还需要对传感器进行维护和保养,定期进行校准和检测,以确保其正常工作。

BSIL-RO-MEMS型MEMS传感器读数仪安装使用手册说明书

BSIL-RO-MEMS型MEMS传感器读数仪安装使用手册说明书

BSIL-RO-MEMS型MEMS传感器读数仪安装使用手册(REV A)北京SOIL仪器有限公司______________________________________________________________________________________________________________________________________________________________________ 地址:北京市丰台区丰台科技园航丰路9号302室电话:************邮编:100071 传真:************网址:电子邮箱:*************.cn目录1.简介 (1)2.设备组成与面板布局 (1)3.传感器读数 (2)4.数据换算 (4)5.维护保养 (5)5.1常规保养 (5)5.2率定 (6)5.3电池充电 (6)6.故障排除 (6)7.主要技术参数 (7)附录-半导体温度计温度推导计算 (8)1.简介BSIL-RO-MEMS 型MEMS(微电子机械系统)传感器便携式读数仪是用来读取MEMS 型固定式测斜仪(或倾角计)传感器的电压输出量的读数装置,设备内置锂离子可充电电池,可重复充电使用。

为达到准确测量的目的,在使用前请务必仔细阅读本使用手册。

由于BSIL-RO-MEMS 型MEMS 传感器读数仪采用了先进的测量技术,因此电缆的长度不会对仪器读数产生影响。

2.设备组成与面板布局读数仪由12V/1.2Ahr的铅酸电池、4.5位超大屏幕液晶(LCD) 数码显示屏、电源开关、功能选择器、输入连接电缆(接线夹)、充电器组成。

功能选择旋钮传感器连接插座电源开关面板的功能按键及说明:传感器连接插座:为10针插座,用于连接配套的传感器接线夹,使用时将接线夹插头上的定位槽与插座上的定位凹槽对准后插入,然后将插头顺时针拧紧(会听到“咔嗒”声)即可。

充电插座:用于连接配套的充电器为内置的锂离子电池充电,电池完全放空后将电池充满约需要12小时。

MEMS加速度传感器的研究报告

MEMS加速度传感器的研究报告

MEMS加速度传感器的研究报告MEMS(Micro-Electro-Mechanical Systems)加速度传感器是一种基于微纳技术制造的传感器,用于测量物体加速度的工具。

它具有小尺寸、低成本、高精度等优点,被广泛应用于汽车安全系统、移动设备、航空航天等领域。

本文主要对MEMS加速度传感器的原理、制造工艺、应用以及发展趋势进行研究和分析。

首先,MEMS加速度传感器的原理是基于微机械系统的振动原理。

当传感器受到加速度作用时,会引起传感器内部的微结构振动。

通过测量这种振动信号的变化,即可获得物体的加速度信息。

通常,MEMS加速度传感器采用谐振质量块和弹性支撑等微结构来实现。

其次,MEMS加速度传感器的制造工艺主要包括光刻、离子刻蚀、薄膜沉积等步骤。

首先,利用光刻技术在硅片上形成所需的结构图案。

然后,通过离子刻蚀方法将不需要的部分去除,形成谐振质量块和弹性支撑等微结构。

最后,通过薄膜沉积技术在微结构上形成感应电极,完成传感器的制造。

MEMS加速度传感器在众多领域有着广泛的应用。

在汽车安全系统中,它可以检测到车辆的碰撞或急刹车等情况,从而触发安全气囊的部署。

在移动设备中,它可以用于屏幕自动旋转、运动跟踪等功能。

在航空航天领域,它可以用于飞机的姿态稳定和导航系统的精确定位等。

随着技术不断发展,MEMS加速度传感器也呈现出一些新的趋势。

首先,尽管MEMS加速度传感器已取得很大进展,但其精度仍有提高的空间。

未来的研究将集中于提高传感器的精度和稳定性,以满足更高精度的应用需求。

其次,为了应对多种复杂环境下的应用需求,MEMS加速度传感器还需要增强其抗干扰能力和适应性。

此外,随着物联网技术的快速发展,MEMS加速度传感器将与其他传感器相结合,为更广泛的应用提供数据和支持。

综上所述,MEMS加速度传感器是一种重要的微纳技术应用,具有广泛的应用前景。

通过对其原理、制造工艺、应用和发展趋势的研究,可以更好地理解和推动该技术的发展,为相关领域的应用提供更好的解决方案。

基于MEMS技术的微电子感应器设计与制备

基于MEMS技术的微电子感应器设计与制备

基于MEMS技术的微电子感应器设计与制备随着科技的不断进步,微电子感应器在各个领域的应用越来越广泛。

基于MEMS(Micro-Electro-Mechanical Systems)技术的微电子感应器不仅具有小型化、高灵敏度和低功耗等优势,还能够实现集成化和多功能化。

本文将探讨基于MEMS技术的微电子感应器的设计与制备过程,并介绍其在生物医学、环境监测和智能物联网等领域的应用。

一、微电子感应器的设计微电子感应器的设计是整个制备过程中的关键环节。

首先,需要确定感应器的类型和工作原理。

常见的微电子感应器包括压力传感器、加速度传感器、温度传感器等。

根据不同的应用需求,选择合适的感应器类型。

其次,需要进行感应器的结构设计。

在设计过程中,需要考虑到感应器的灵敏度、响应时间和稳定性等因素。

通过优化结构参数,可以提高感应器的性能。

例如,在压力传感器的设计中,可以通过调整薄膜的材料和厚度来提高其灵敏度和稳定性。

最后,需要进行电路设计。

微电子感应器通常需要与电路进行配合工作,将感应信号转化为电信号输出。

电路设计需要考虑到信号放大、滤波和模数转换等功能。

通过合理的电路设计,可以提高感应器的信噪比和动态范围。

二、微电子感应器的制备微电子感应器的制备是一个复杂的过程,包括材料选择、工艺流程和封装等环节。

首先,需要选择合适的材料。

常见的微电子感应器材料包括硅、玻璃和聚合物等。

根据不同的应用需求,选择具有合适性能的材料。

其次,需要进行工艺流程的设计。

工艺流程包括光刻、薄膜沉积、离子注入和金属薄膜制备等步骤。

通过合理的工艺流程设计,可以实现感应器结构的精确控制和制备。

最后,需要进行感应器的封装。

封装是保护感应器的重要环节,可以防止外界环境对感应器的影响。

常见的封装方式包括芯片封装和模块封装。

根据不同的应用需求,选择合适的封装方式。

三、基于MEMS技术的微电子感应器的应用基于MEMS技术的微电子感应器在各个领域的应用越来越广泛。

OMRON MEMS流量传感器D6F-V03A1说明书

OMRON MEMS流量传感器D6F-V03A1说明书

The unique dust separating structure, developed by OMRON is a compact and highly efficient FLOW-SENSOR.•A dust-resistant design has been taken into consideration, by the original dust segregation structure, of OMRON.•+/-10% Full-Scale repeatable accuracy achieves consistent air velocity measurement.•Applications include clogged-filter detection and air velocity.Sensor specificationAbsolute maximum ratingOutput characteristicMeasurement condition: Power-supply voltage 3.3VDC, ambient temperature 25°C and dry air.Note:1.Air velocity is the value converted from the mass-flow in OMRON regulation wind tunnel phi48mm.2.The air velocity, set to the Measurement Law, is not shown. Please confirm in a real use environment in use.3.T emperature characteristics:Over ambient temperature range -10 to +60°C: within ±20% F .S. of detected characteristics Of at +25°C.Type D6F-V03A1Flow Range 0 – 3 m/s @ 25°C, 1 atmosphere Case Material Thermoplastic resin GasAirAmbient Temperature -10 to +60°C (with no condensation)Using Humidity Max. 85% RH (with no condensation)Storage Temperature -40 to +80°C (with no condensation)Preservation Humidity Max. 85% RH (with no condensation)Power Supply Voltage 3.15 to 3.45 VDCOutput Signal Analog output 0.5 to 2 VDC (non-linear output)Load resistance min. 10k ΩCurrent Consumption Max. 15mA (No-load, V CC = 3.3 VDC, 25°C)Insulation Resistance20Mohm min. (500VDC, between lead terminal and the case)Dielectric Withstanding Voltage Leakage current is 1mA max. (at 500 VAC, 50/60Hz for one minute).500VAC, 50/60Hz judged at 1mA max. (between the lead terminals and the case)ItemSymbol Rating Unit Power supply voltage V CC 12.0VDC Output voltageV OUT3.0VDCFlow Velocity (m/sec)00.75 1.50 2.25 3.00Output Voltage (VDC)0.50±0.150.70±0.151.11±0.151.58±0.152.00±0.15DimensionsOmron Electronic Components, LLCTerms and Conditions of Sales1.Definitions: The words used herein are defined as follows.(a) Terms:These terms and conditions(b) Seller:Omron Electronic Components LLC and its subsidiaries(c) Buyer:The buyer of Products, including any end user in section III through VI(d) Products:Products and/or services of Seller(e) Including:Including without limitation2.Offer; Acceptance: These Terms are deemed part of all quotations, acknowledgments,invoices, purchase orders and other documents, whether electronic or in writing, relating to the sale of Products by Seller. 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Return of any Products by Buyer must beapproved in writing by Seller before shipment.3.Limitation on Liability: SELLER AND ITS AFFILIATES SHALL NOT BE LIABLE FORSPECIAL, INDIRECT, INCIDENTAL OR CONSEQUENTIAL DAMAGES, LOSS OF PROFITS OR PRODUCTION OR COMMERCIAL LOSS IN ANY WAY CONNECTED WITH THE PRODUCTS, WHETHER SUCH CLAIM IS BASED IN CONTRACT,WARRANTY, NEGLIGENCE OR STRICT LIABILITY. 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MICHELIN MEMS EVOLUTION 4 流体防护传感器用户手册说明书

MICHELIN MEMS EVOLUTION 4 流体防护传感器用户手册说明书

Manuals+— User Manuals Simplified.MICHELIN Mems Evolution 4 Liquid Proof Sensor Owner’s ManualHome » MICHELIN » MICHELIN Mems Evolution 4 Liquid Proof Sensor Owner’s Manual PRODUCT NOTICEContents1 PRODUCT NAME MEMS2 PRODUCT DESCRIPTION3 FCC / IC CERTIFICATION4 PRODUCT SPECIFICATION5 DISPOSAL6 CONTACT DETAILS — TechnicalSupport7 Documents / ResourcesPRODUCT NAME MEMSEVOLUTION-4 LIQUID PROOF SENSOR — Part Number CA1564947PRODUCT DESCRIPTIONThe MEMS EVOLUTION-4 LIQUID PROOF SENSOR is a battery powered air pressure and air temperature sensor designed to operate inside tubeless earthmover tires.This information is sent, via a radio transmitter, to a MEMS EVOLUTION-4 TRANSCEIVER unit, which is usually mounted in the cab of the vehicle.FCC / IC CERTIFICATIONModel: RV1-30 FCC ID: F15-RV1-30G HVIN: RV1-30 IC: 5056A-RV130GPMN: MEMS EVOLUTION 4 LIQUID PROOF SENSORFederal Communications Commission (FCC) Statement 15.19 This device complies with Part 15 of the FCC Rules. Operation is subject to the following two conditions: 1) this device may not cause harmful interference and 2) this device must accept any interference received, including interference that may cause undesired. 15.195(a) This equipment has been tested and found to comply with the limits for a Class A digital device, pursuant to part 15 of the FCC Rules. These limits are designed to provide reasonable protection against harmful interference when the equipment is operated in a commercial environment. This equipment generates, uses, and can radiate radio frequency energy and, if not in stalled and used in accordance with the instruction manual, may cause harmful interference to radio communications. Operation of this equipment in a residential area is likely to cause harmful interference in which case the user will be required to correct the interference at his own expense.’‘15.21 You are cautioned that changes or modifications not expressly approved by the part responsible for compliance could void the user’s authority to operate the equipment.”‘FCC RF Radiation Exposure Statement:1. This Transmitter must not be co-located or operating in conjunction with any other antenna or transmitter.”2. This equipment complies with FCC RF radiation exposure limits set forth for an uncontrolled environment. Thisequipment should be installed and operated with a minimum distance of 29 centimeters between th e radiator and your body.Devices shall not be used for control of or communic ations with unmanned aircraft systems.Caution: Exposure to Radio Frequency Radiation1. To comply with the Canadian RF exposure compliance requirements, this device and its antenna must notbe co-located or operating in conjunction with any other antenna or transmitter.”2. To comply with RSS 192 RF exposure compliance requirements, a separation distance of at least 20 cm mustbe maintained between the antenna of this device and all persons.****************************MFP MICHELIN 23 Place des Carmes-Dechaux 63000 Clermont-Ferrand France The product must not be disposed of with unsorted waste, but must be sent to separate collection facilities for recovery and recycling Features, specifications are subject to change without notification. Document version 17.0 MFP MICHELIN © 2012 All rights reserved. Exclusive property of Manufacture Francaise des Pneumatiques Michelin. Any reproduction or utilization prohibited without the consent of Michelin.Documents / ResourcesMICHELIN Mems Evolution 4 Liquid Proof Sensor [pdf] Owner's ManualRV1-30G, FI5-RV1-30G, FI5RV130G, Mems Evolution 4, Liquid Proof Sensor, Mems Evolution4 Liquid Proof Sensor, SensorManuals+,。

MEMS CO 气体传感器使用说明书

MEMS CO 气体传感器使用说明书

MEMS CO气体传感器(型号:GM-702B)使用说明书版本号:2.2实施日期:2020.08.25郑州炜盛电子科技有限公司Zhengzhou Winsen Electronic Technol ogy Co.,Ltd声明本说明书版权属郑州炜盛电子科技有限公司(以下称本公司)所有,未经书面许可,本说明书任何部分不得复制、翻译、存储于数据库或检索系统内,也不可以电子、翻拍、录音等任何手段进行传播。

感谢您使用炜盛科技的系列产品。

为使您更好地使用本公司产品,减少因使用不当造成的产品故障,使用前请务必仔细阅读本说明书并按照所建议的使用方法进行使用。

如果您不依照本说明书使用或擅自去除、拆解、更换传感器内部组件,本公司不承担由此造成的任何损失。

您所购买产品的颜色、款式及尺寸以实物为准。

本公司秉承科技进步的理念,不断致力于产品改进和技术创新。

因此,本公司保留任何产品改进而不预先通知的权力。

使用本说明书时,请确认其属于有效版本。

同时,本公司鼓励使用者根据其使用情况,探讨本产品更优化的使用方法。

请妥善保管本说明书,以便在您日后需要时能及时查阅并获得帮助。

郑州炜盛电子科技有限公司GM-702B CO气体传感器产品描述MEMS一氧化碳气体传感器利用MEMS工艺在Si基衬底上制作微热板,所使用的气敏材料是在清洁空气中电导率较低的金属氧化物半导体材料。

当环境空气中有被检测气体存在时传感器电导率发生变化,该气体的浓度越高,传感器的电导率就越高。

使用简单的电路即可将电导率的变化转换为与该气体浓度相对应的输出信号。

传感器特点本品采用MEMS工艺,结构坚固,对一氧化碳灵敏度高;具有尺寸小、功耗低、灵敏度高、响应恢复快、驱动电路简单、稳定性好、寿命长等优点。

主要应用家庭用一氧化碳气体泄漏报警器、工业用一氧化碳气体报警器以及便携式一氧化碳气体检测器等。

技术指标表1产品型号GM-702B产品类型MEMS一氧化碳气体传感器标准封装陶瓷封装检测气体一氧化碳检测浓度5ppm~5000ppm CO标准电路条件回路电压V C≤24V DC加热电压V H2.5V±0.1V AC or DC(高温)0.5V±0.1V AC or DC(低温)加热时间T L60s±1s(高温),90s±1s(低温)负载电阻R L可调标准测试条件下气敏元件特性加热电阻R H80Ω±20Ω(室温)加热功耗P H≤50mW敏感体电阻R S1KΩ~30KΩ(in150ppmCO)灵敏度S R0(in air)/Rs(in150ppmCO)≥3标准测试条件温度、湿度20℃±2℃;55%RH±5%RH 标准测试电路V H:2.5V±0.1V(高温)0.5V±0.1V(低温)V C:5.0V±0.1V传感器结构示意图引脚连接①R H1②③R H2④⑤R S1⑥⑦R S2⑧底视尺寸图(单位:mm )外形图底视引脚布置图①②③④⑧⑦⑥⑤基本电路图2GM-702B 测试电路VcV H+2.5V/0.5V图1传感器结构示意图说明:上图为GM-702B传感器的基本测试电路。

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MEMS传感器一般是把敏感单元和信号处理电路集成在一个芯片上。

这样,传感器不仅能够感知被测参数,将其转换成方便度量的信号,而且能对所得到的信号进行分析、处理和识别、判断,因此被称为智能传感器。

MEMs传感器的主要优点有以下几点。

a.可提高信噪比。

在同一个芯片上进行信号传输前可放大信号以提高信号水平,减小干扰和传输的噪声,特别是同一芯片上进行A/D转换时,更能改善信噪比。

b.可改善传感器悸性能。

因这种传感器集成了敏感元件、放大电路和补偿电路(如微型压力传感器)在同一芯片上在实现传感探测的同时具有信号处理的功能(在同一芯片上的反馈电路可改善输出钽电容的线性度和频响特性):因为集成了补偿电路,可降低由温度或由应变等因素引起的误差;在同一芯片上的电压式电流源可提供自动的或周期性的自校准和自诊断。

c.输出信号的调节功能。

集成在芯片上的电路可以在信号传输前预先完成A/D转换、阻抗匹配、输出信号格式化以及信号平均等信号调节和处理工作。

d.MEMS传感器还可以把多个相同的敏感元件集成在同一芯片上形成传感器阵列(如微型触觉传感器);或把不同的敏感元件集成在同一芯片上实现多功能传感(如微型气敏传感器)c%ddz
e.由于MEMS传感器体积微小,重量极轻,因此其附贴片钽电容加质量等因素对被测系统的影响可以忽略不计,可提高测量
精度。

MEMS传感器种类繁多,可用来测量的参量很多,主要可分为以下几类。

a.压力传感器:通常有测量绝对压力的传感器和计量压力的传感器。

b:热学传感器:温度、热量和热流传感器。

c.力学传感器:力、压强、速度、加速度和位置传感器。

d.化学传感器:化学浓度、化学成分和AVX反应率传感器。

e.磁学传感器:磁场强度、磁通密度和磁化强度传感器。

f.辐射传感器:电磁波强度、磁通密度和磁化强度传感器。

g.电学传感器:电压、电流和电荷传感器。

就应用领域来讲:包括军事、生物医学、汽车业等
MEMS压力传感器的原理与应用
作者:颜重光上海市传感技术学会
MEMS(Micro Electromechanical System,即微电子机械系统)是指集微型传感器、执行器以及信号处理和控制电路、接口电路、通信和电源于一体的微型机电系统。

MEMS压力传感器可以用类似集成电路的设计技术和制造工艺,进行高精度、低成本的大批量生产,从而为消费电子和工业过程控制产品用低廉的成本大量使用MEMS传感器打开方便
之门,使压力控制变得简单、易用和智能化。

传统的机械量压力传感器是基于金属弹性体受力变形,由机械量弹性变形到电量转换输出,因此它不可能如MEMS压力传感器那样,像集成电路那么微小,而且成本也远远高于MEMS压力传感器。

相对于传统的机械量传感器,MEMS压力传感器的尺寸更小,最大的不超过一个厘米,相对于传统“机械”制造技术,其性价比大幅度提高。

图1 惠斯顿电桥电原理
图2 应变片电桥的光刻版本
图3 硅压阻式压力传感器结构
MEMS压力传感器原理
目前的MEMS压力传感器有硅压阻式压力传感器和硅电容式压力传感器,两者都是在硅片上生成的微机械电子传感器。

硅压阻式压力传感器是采用高精密半导体电阻应变片组成惠斯顿电桥作为力电变换测量电路的,具有较高的测量精度、较低的功耗和极低的成本。

惠斯顿电桥的压阻式传感器,如无压力变化,其输出为零,几乎不耗电。

其电原理如图1所示。

硅压阻式压力传感器其应变片电桥的光刻版本如图2。

MEMS硅压阻式压力传感器采用周边固定的圆形应力杯硅薄膜内壁,采用MEMS技术直接将四个高精密半导体应变片刻制在其表面应力最大处,组成惠斯顿测量电桥,作为力电变换测量电路,将压力这个物理量直接变换成电量,其测量精度能达0.01-0.03%FS。

硅压阻式压力传感器结构如图3所示,上下二
层是玻璃体,中间是硅片,硅片中部做成一应力杯,其应力硅薄膜上部有一真空腔,使之成为一个典型的绝压压力传感器。

应力硅薄膜与真空腔接触这一面经光刻生成如图2的电阻应变片电桥电路。

当外面的压力经引压腔进入传感器应力杯中,应力硅薄膜会因受外力作用而微微向上鼓起,发生弹性变形,四个电阻应变片因此而发生电阻变化,破坏原先的惠斯顿电桥电路平衡,电桥输出与压力成正比的电压信号。

图4是封装如集成电路的硅压阻式压力传感器实物照片。

图4 硅压阻式压力传感器实物
图6 电容式压力传感器实物
图5 电容式压力传感器结构
电容式压力传感器利用MEMS技术在硅片上制造出横隔栅状,上下二根横隔栅成为一组电容式压力传感器,上横隔栅受压力作用向下位移,改变了上下二根横隔栅的间距,也就改变了板间电容量的大小,即△压力=△电容量(图5)。

电容式压力传感器实物如图6。

MEMS压力传感器的应用
MEMS压力传感器广泛应用于汽车电子如TPMS、发动机机油压力传感器、汽车刹车系统空气压力传感器、汽车发动机进气歧管压力传感器(TMAP)、柴油机轨压力传感器。

消费电子如胎压计、血压计、橱用秤、健康秤,洗衣机、洗碗机、电冰箱、微波炉、烤箱、吸尘器用压力传感器,空调压力传感器,洗衣机、
饮水机、洗碗机、太阳能热水器用液位控制压力传感器。

工业电子如数字压力表、数字流量表、工业配料称重等。

典型的MEMS压力传感器管芯(die)结构和电原理如图7所示,左是电原理图,即由电阻应变片组成的惠斯顿电桥,右为管芯内部结构图。

典型的MEMS压力传感器管芯可以用来生产各种压力传感器产品,如图8所示。

MEMS压力传感器管芯可以与仪表放大器和ADC管芯封装在一个封装内(MCM),使产品设计师很容易使用这个高度集成的产品设计最终产品。

MEMS压力传感器Die的设计、生产、销售链
MEMS压力传感器Die的设计、生产、销售链如图9所示。

目前集成电路的4寸圆晶片生产线的大多数工艺可为MEMS生产所用。

但是需要增加双面光刻机、湿法腐蚀台和键合机三项MEMS 特有的工艺设备。

压力传感器产品生产厂商需要增加价格不菲的标准压力检测设备。

对于MEMS压力传感器生产厂家来说,开拓汽车电子以及消费电子领域的销售经验和渠道是十分重要和急需的。

特别是汽车电子对MEMS压力传感器的需要量在近几年激增,如捷伸电子的年需求量约为200-300万个。

MEMS芯片在设计、工艺、生产方面与IC的异同与传统IC行业注重二维静止的电路设计不同,MEMS以理论力学为基础,结合电路知识设计三维动态产品。

对于在微米尺度进行机械设计会更多地依靠经验,设计开发工具(Ansys)也与
传统IC(如EDA)不同。

MEMS加工除了使用大量传统的IC工艺,还需要一些特殊工艺,如双面刻蚀,双面光刻等。

MEMS比较传统IC,工艺简单,光刻步骤少,MEMS生产的一些非标准的特殊工艺,工艺参数需要按照产品的要求来进行调整。

由于需要产品设计、工艺设计和生产三方面的密切配合,IDM的模式要优于Fabless+Foundry的模式。

MEMS对封装技术的要求很高。

传统半导体厂商的4〃生产线正面临淘汰,即使用来生产LDO,其利润也非常低,但是,如果生产MEMS,则可获得较高的利润。

4〃线上的每一个圆晶片可生产合格的MEMS压力传感器Die5-6K个,每个出售后,可获成本7-10倍的毛利(如图10)。

转产MEMS对厂家的工艺要求改动不大,新增辅助设备有限,投资少、效益高。

MEMS芯片与IC芯片整合封装是集成电路技术发展的新趋势,也是传统IC厂商的新机遇。

图11是MEMS在4〃圆晶片生产线上。

4〃生产MEMS压力传感器Die成本估计
4”圆晶片生产线生产MEMS压力传感器Die成本估计如表所示,新增固定成本是指为该项目投入的人员成本和新设备的折旧(人员:专家1名+MEMS设计师2名+工程师4名+工艺师5名+技工12名,年成本147万元,新增设备投入650万元,按90%四年折旧计算);现有4”线成本是指在5次光刻条件下使用4”线的成本(包括人工、化剂、水电、备件等的均摊成本);硅片材料成本是指双抛4寸硅片的价格。

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