射频器件及应用介绍

射频器件及应用理察森电子 2008.11.27Slide 1Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004射频器件及应用内容提要1、直放站系统组成； 2、射频器件分类及著名品牌介绍； 3、Freescale 大功率射频器件LDMOS封装、命名及特 性介绍； 4、器件规格书的阅读理解； 5、应用LDMOS管的功率放大器设计概述； 6、LDMOS功放管使用、安装及调试注意事项； 7、讨论与提问。

Slide 2Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004一、直放站系统信号流图Slide 3Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004TD 直放站结构框图DSA:/VVA LNA MAAL-007306 Load C10A50Z4 RF3861 LNA MAALSS0045 RF3865 BPF CER0331A Amp MMG3012N MAAMSS0048 Amp MAAMSS0049 DSA: PE4306 VVA:MA4P274-1225 PIN:MA4P7455-287T PA: MW7IC18100N MRF6S20010N –MRF6S21060N PTMA180101M – PTFA191001ESwitch 10W: MASWSS0181 High isolation MASWSS0178DetectorCirculator MAFRIN0411 ControllerCirculator MAFRIN0411Switch Detector 10W: MASWSS0181 High isolation MASWSS0178 Load C10A50Z4PA: MW7IC18100N MRF6S20010N –MRF6S21060N PTMA180101M – PTFA191001EDSA:/VVA DSA: PE4306 VVA:MA4P274-1225 PIN:MA4P7455-287T Amp MAAMSS0049 Amp MMG3012N MAAMSS0048 BPF CER0331A LNA MAALSS0045 RF3865LNA MAAL-007306 RF3861TD-SCDMA RepeaterSlide 4Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004二、射频器件分类有源器件: 有源器件 放大器、衰减器、频率控制器件-混频器MIXER，锁 相环PLL，压控振荡器VCO，频率合成器 Synthesizer… 无源器件： 无源器件： 天线、滤波器、双工器、隔离/环行器、藕合器、功 率电阻、微波电容…Slide 5Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004射频器件的著名品牌大功率LDMOS系列: 大功率LDMOS系列: Freescale, Infineon, NXP LDMOS系列 小信号放大器: M/AAnadigics, 小信号放大器: WJ, M/A-COM, Freescale, Anadigics, Hittite, RFMD 低噪声放大器: M/AFiltronic, Avargo, 低噪声放大器: M/A-COM, Filtronic, Avargo, 衰减器: 衰减器: M/APeregrine, M/A-COM, Hittite混频器/振荡器: WJ,M/A-COM,Z混频器/振荡器: WJ,M/A-COM,Z-COM, RF Gain, RFMD 耦合器/电桥: 耦合器/电桥: Anaren隔离器/环形器: M/AAnaren, 隔离器/环形器: M/A-COM, Anaren, SDP 大功率电阻: 大功率电阻: 微波电容: 微波电容: Anaren, Anaren, ATC ATC, Johanson Mfg. AVX,Slide 6Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004理察森分销的主要品牌Slide 7Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004封装----Plastic Package Evolution 三、LDMOS封装 封装’70’s – Plastic packages begin replacing Metal Can and Ceramic packages in commercial applications• Chip level passivation – near hermetic • Over-molded plastic technology developments’80’s – Automotive and Industrial applications• • • • •Cost reduction Factory Automation Some Military and aero space applications Higher performance plastic materials Plastic becomes primary semiconductor package‘90’s Freescale introduces first RF power plastic devices• LDMOS dual passivation technology • Reuse of power package technologySlide 8Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004RF Division RF Packaging PlatformsRF PA Packaging SolutionsPlastic PackagingCeramic PackagingHybrid ModulesTransistor PkgI/C PkgHigher Performance Materials High ZNew Structure / Manufacturing Low Stress Low Rth50 Ohm SolutionsSlide 9Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004RF Package ConstructionConventional Ceramic Package Power Plastic PackageGATEDRAINGATEDRAIN• CuW heat sink • AuSi eutectic die attach (hard solder) • Cavity style package • Epoxy lid seal • Air surrounding the wire bonds• Cu heat sink • Pb based (soft solder) die attach • Over-molded package • Epoxy mold compound • Mold compound surrounding the wire bondsSlide 10Freescale™ and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004Metal Ceramic Package Power Plastic Package Dimensional Tolerances In Package Assembly•Seating Plane Height (±100um)•Lead Tip Position (±150um) min •Mold Cavity Dimension (±50um)•Mold Cavity to LF Alignment (±25um)•Die to LF Placement (±50um)•Epoxy Flow-Out (±0um)•Seating Plane Height (±25um)•Lead Tip Position (±75um) typicalComparison between plastic and ceramicCeramic PackagesCuW Low RthPure CuW material High conductivityCuWHeat dissipation coneLow RthLarger Heat dissipation coneImprovement in Rth by 17% -30%RF Power Plastic Packaging FamilyPLD-1.5PFP-16 TO-272-6TO-270-2 Gull Wing TO-272-8TO-272-2TO-270-2TO-272WB-16 Straight Lead TO-272WB-16Gull WingTO-270WB-4TO-272WB-4Plastic packagesFreescale LDMOS 命名• A decoder ring to define just what all thenumbers and letters mean in the device’snames.•Example on ceramic as well as plasticparts•Device date code info is also explainedCeramic parts (high power)P: PrototypeRF : Radio Frequency (all ceramic)6: 6th generation LDMOS (current generation)P : Push Pull9 220: 900MHz 220W Power at 1 dB compression H : High Thermal ConductivityP RF 6P 9220HM RF 6S 19100HSM: Full productionRF : Radio Frequency (all ceramic)6: 6th generation LDMOS (current generation)S : Single Ended19 100: 1900MHz 100W Power at 1 dB compression H : High Thermal Conductivity S : Earless versionS: earless versionM W6S010N R1 plastic part M : Full productionW: Wideband6: 6th generation LDMOS (current generation) S: Single ended010: 10W Power at 1 dB compressionN: plastic (200 degree C plastic)R1: Reel information (500 per reel)M W 4IC 2030MB R1 plastic partM : Full productionW : Wideband4:4th generation LDMOSIC : Multistage IC (ie at least two stage of amplification)20: 2.0 GHz operation30: power at 1 dB compression (P1dB)MB: M molded (plastic), B boltdown (can be screwed down)R1:Reel information (500 per reel)MB (molded Boltdown)G (gullwing)Inside•Device Manufacturer,M otorola• A One or Two Letter Indicator for Design Characteristics •R adio F requency Device•H igh P ower A mplifier Device•W ideband Device•H igh V oltage Device•H igh L inearity Device•M onolithic G aAs Device•1000and 2000Series for 1 and 2 GHz CATV•2400Series for 2.4 GHz 802.11g•3000Series for 3 GHz General Purpose Amplifier •5000Series for 5 GHz 802.11aM RF 5S 21100HS R3, M W 4IC 2030MB R1M RF5S21100HS R3, M W4IC2030GMB R1•Generation of LDMOS Technology•4th, 5th, 6th or 7th Generation•1500 Series for Land Mobile•300 and 3000 Series for TV Broadcast•S ingle Ended, P ush Pull, I ntegrated C ircuit or G aAs •One or Two Digits to Indicate the Frequency of Operation •9for 900 MHz, 1.8, 1.9, 2.0, 2.7, 3.5for GHz•A for 1800 and B for 1900 MHz•Two or Three Digits to Indicate P1dB Output Power Capability in Watts•30W,60W,85W,180W,240W, etc.M RF5S21100HS R3, M W4IC2030GMB R1•Package Details•L for Low Gold•H for Low Gold and High Thermal Conductivity•S for Earless Package•M for Molded Plastic•N for Lead Free and 200C Plastic•B for Bolt Down Plastic•G or Z for Gull Wing Surface Mount•Tape and Reel Information (with Reel Quantities)•T1(1500),R1(500),R2(1000),R3(250),R4(100),R5(50) or R6(150)Date Code with Lot DesignatorQQ0436FR•One or Two letter Assembly Site Indicator•QQ for KLM Assembly Site•CT for BAT3 Assembly Site•Y for Tempe Final Manufacturing Prototypes• A Two Digit Number for Year•04for 2004, 03for 2003• A Two Digit Number for Work Week•36for WW36, Aug 24 thru 30 in 2003• A Two Letter Code for Lot Number Tracking, Traceable to Assembly Lot and Specific Wafer, Ceramics Only.•FR, YP, other Random ParingsRF Product Strategy Overview对设计工程师来讲对设计工程师来讲，，需要关注手册上的下列性能•Maximum Ratings 最大等级类参数VDSS, VGS, PD, TJ •Thermal Characteristics 温度特性•DC Parameters 电压及电流参数VDS, VGS(Q), IDQ •RF Parameters 射频参数PEP, P1dB,Power Gain,IMD 三阶互调,Efficiency 效率, Input Return Loss 输入回波损耗, Out Miss-match Stress, In/Out Impedance 输入/输出阻抗等Typical Characteristic Performance 主要射频特性•Package 封装四、怎样阅读LDMOS 放大管规格书五、LDMOS放大器的设计怎样开始设计呢？？•拿到一个LDMOS管，怎样开始设计呢# 查看输入/输出阻抗值# 正确选择PCB印制板板材-通信用射频功放板材的选用与低频或数字电路板材不同，对板材厚度(放大器的放大功率), 介电常数Er(放大器电路尺寸)等有特殊要求# 用线性仿真进行阻抗匹配Z IN Z S* , Z OL* Z L*# 用MET模型进行非线性仿真以预测放大器射频性能-增益,回波损耗,P1dB,IMD,效率,Idq漂移,Spectral Re-growth# 设计偏置电路# 大功率放大器偏置电路里要考虑到加入温度补偿电路# 印制板制图# 设计功率放大器结构件LDMOS放大管的选用原则•怎样选择射频功率LDMOS FET# 工作频率# 工作时放大器的应用级别# 工作时的供电电压# 有足够的输出功率余量# 有足够的增益以及效率余量# 与功放结构件相匹配的封装# 在需要的现场环境下工作时的可靠性以及稳定性# 成本及货期LDMOS放大器的设计•Bias Circuit 偏置电路# 偏置电路负责给栅极和漏极加电以保障放大器的射频性能# 电感, ¼波长微带线, 电阻# 要用网络分析仪验证偏置电路带宽以及隔离度# 要用高Q值的去耦电容来decouple射频信号# 用较高值的去耦电容来去除低频信号影响# 尽量回避使用ferrite# 有时偏置电路里的串联电阻有助于减少放大器的不稳定性# 栅极供电电路里要有电压控制部分LDMOS放大器的设计•温度补偿# Idq随着温度变化会有轻微漂移，这是由于Hot Carrier Injection热载流子注入随温度变化的缘故# 需要在工作温度范围内尽量保持Idq不变# 有各种温度补偿电路，分别用到OP Amp, 二极管, BJT以及电热调节器# 用通用BJT的温度系数来进行补偿-测量LDMOS FET的温度系数-计算R1,R2 值来模拟同样的温度系数# 请参考Motorola应用手册AN1643 LDMOS PA for GSM Optimum Biasing CircuitVbiasVgate4 : ground 8 : inputNote : refer to application note AN1643 for principle of operationR1R2Vbiasjunction multiplier schematicVce = (1 + R2/R1).VbeLDMOS 放大器的设计–温度补偿电路LDMOS放大器的设计---PCB制作•PCB印制板# 要考虑微带线的精确度极限值以及当地印制板工艺的局限性# 地# 过孔# 射频用信号接头的安装# Plating电镀层# Accuracy of Location# 可参考Motorola AN1670 80W GSM900MHz Two-Stage Amp设计举例--GSM 900MHz 60W SCPA# GMSK is constant envelope modulation scheme. (P/A=1)# Not affected by Non-Linearity of HPA# Need Max P1dB and Efficiency.# Calculate the loss of output Isolator, Coupler and other circuit.# 60W(+48dBm) + output loss = output power of TR# Final Stage : MRFE6S9130H(130W)/MRFE6S9125N（125W）or MWE6IC9100N(100W)# +48dBm -20dB(Gain) = +28dBm# +28dBm + Linearity Margin + output loss = Driver output power# +30 ~ +33dBm output will be suitable.# Driver Stage : MW6S004NLine up : MW6S004N+ MRFE6S9130H设计举例--CDMA 800MHz 10W SCPA# CDMA Signal has 8~12dB Peak to Average Ratio# Need back off operation to get Linearity (8dB typical)# Calculate the loss of output Isolator, Coupler and other circuit.# 10W(+40dBm) + 8dB back off + output loss(1dB) = output power of TR = 90W PEP (+49dBm)# Final Stage : MRF5S9100NB (100W, +50dBm)# +49dBm –19dB(Gain) = +30dBm# +30dBm + Linearity Margin(1~5dB) = Driver output power# Driver Stage : MW6S004NLine up : MW6S004N + MRF5S9100MB•LDMOS 使用时注意事项# 要在抗静电环境下操作要在抗静电环境下操作，，因为人身上的静电值很高, 有时甚至会超过10000伏.LDMOS 简单失效检测方法一、# 测S-G 和D-G 极间正向电阻, 正常值为Mk Ω级, 否则为低于低于几几k Ω二、# Source-Gate connection is the same as Si PN Junction (+0.7V)# (+) Lead of Multi Meter connect to Source and (-) Lead to Gate # Source-Drain connection has about 0.55V barrier 偏置电路给电顺序# 开电: 先Vds 然后Vgs 最后给射频信号# 断电: 先关断射频信号然后依次关断Vgs 和Vds六、LDMOS 使用使用、、安装安装、、调试时的注意事项LDMOS安装•散热片# 散热性能# Shield# Internal Radiation# Tolerance•安装时的注意事项# PCB 印制板安装到散热片上# 再装上LDMOS# 安装射频接头# 要反复确认LDMOS是否正确安装，否则会影响放大器的热性能以及接地性能# 要用尽可能多的地孔以保障良好的接地性能，在印制板及散热片之间用尽可能多的螺丝或直接焊接以保障二者良好的接触# PCB 印制板先安装到散热底片上；# 检查LDMOS 的外表面电阻是否正常阻是否正常；；#必要时在LDMOS 的散热底面底面涂涂上适当的散热膏；#装上LDMOS ，管子尽量靠近输出端出端，，位置正位置正确确一致一致，，并保证接触良好良好。