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共轭聚合物 有机半导体 英文

共轭聚合物 有机半导体 英文

共轭聚合物有机半导体英文英文回答:Conjugated polymers are a class of organic semiconductors that have alternating single and double bonds along their backbone. This unique structure gives conjugated polymers interesting electrical and optical properties, making them promising candidates for use in various electronic applications.Conjugated polymers are typically synthesized via chemical polymerization techniques, such as oxidative coupling or Heck reaction. The resulting polymers are typically soluble in organic solvents and can be processed into thin films using techniques such as spin coating or drop casting.The electrical properties of conjugated polymers are highly dependent on the degree of conjugation, which is the length of the alternating single and double bond sequence.Longer conjugation lengths lead to higher charge carrier mobility and lower bandgap, making the polymer more conductive and semiconducting, respectively.The optical properties of conjugated polymers are also affected by the degree of conjugation. Longer conjugation lengths lead to absorption and emission of light at longer wavelengths, resulting in a red shift in the polymer's absorption and emission spectra.Conjugated polymers have been used in a variety of electronic applications, including organic solar cells, organic light-emitting diodes (OLEDs), and transistors. In organic solar cells, conjugated polymers act as the active layer, absorbing light and generating charge carriers that are then collected by the electrodes. In OLEDs, conjugated polymers are used as the emitting layer, emitting light when an electric current is applied. In transistors, conjugated polymers are used as the semiconductor channel, controlling the flow of current between the source and drain electrodes.Conjugated polymers are a promising class of materials for use in electronic applications due to their unique electrical and optical properties. Further research is needed to improve the performance and stability of conjugated polymers, but they have the potential to revolutionize the field of electronics.中文回答:共轭聚合物是有机半导体的一种,其主链上交替排列着单键和双键。

光电技术专业英语词汇

光电技术专业英语词汇

《光电技术》专业英语词汇1.Absorption coefficient 吸收系数2.Acceptance angle 接收角3.fibers 光纤4.Acceptors in semiconductors 半导体接收器5.Acousto-optic modulator 声光调制6.Bragg diffraction 布拉格衍射7.Air disk 艾里斑8.angular radius 角半径9.Airy rings 艾里环10.anisotropy 各向异性11.optical 光学的12.refractive index 各向异性13.Antireflection coating 抗反膜14.Argon-ion laser 氩离子激光器15.Attenuation coefficient 衰减系数16.Avalanche 雪崩17.breakdown voltage 击穿电压18.multiplication factor 倍增因子19.noise 燥声20.Avalanche photodiode(APD) 雪崩二极管21.absorption region in APD APD 吸收区域22.characteristics-table 特性表格23.guard ring 保护环24.internal gain 内增益25.noise 噪声26.photogeneration 光子再生27.primary photocurrent 起始光电流28.principle 原理29.responsivity of InGaAs InGaAs 响应度30.separate absorption and multiplication(SAM) 分离吸收和倍增31.separate absorption grading and multiplication(SAGM) 分离吸收等级和倍增32.silicon 硅33.Average irradiance 平均照度34.Bandgap 带隙35.energy gap 能级带隙36.bandgap diagram 带隙图37.Bandwidth 带宽38.Beam 光束39.Beam splitter cube 立方分束器40.Biaxial crystal双s 轴晶体41.Birefringent 双折射42.Bit rate 位率43.Black body radiation law 黑体辐射法则44.Bloch wave in a crystal 晶体中布洛赫波45.Boundary conditions 边界条件46.Bragg angle 布拉格角度47.Bragg diffraction condition 布拉格衍射条件48.Bragg wavelength 布拉格波长49.Brewster angle 布鲁斯特角50.Brewster window 布鲁斯特窗51.Calcite 霰石52.Carrier confinement 载流子限制53.Centrosymmetric crystals 中心对称晶体54.Chirping 啁啾55.Cladding 覆层56.Coefficient of index grating 指数光栅系数57.Coherence连贯性pensation doping 掺杂补偿59.Conduction band 导带60.Conductivity 导电性61.Confining layers 限制层62.Conjugate image 共轭像63.Cut-off wavelength 截止波长64.Degenerate semiconductor 简并半导体65.Density of states 态密度66.Depletion layer 耗尽层67.Detectivity 探测率68.Dielectric mirrors 介电质镜像69.Diffraction 衍射70.Diffraction g rating 衍射光栅71.Diffraction grating equation 衍射光栅等式72.Diffusion current 扩散电流73.Diffusion flux 扩散流量74.Diffusion Length 扩散长度75.Diode equation 二极管公式76.Diode ideality factor 二极管理想因子77.Direct recombinatio直n接复合78.Dispersion散射79.Dispersive medium 散射介质80.Distributed Bragg reflector 分布布拉格反射器81.Donors in semiconductors 施主离子82.Doppler broadened linewidth 多普勒扩展线宽83.Doppler effect 多普勒效应84.Doppler shift 多普勒位移85.Doppler-heterostructure 多普勒同质结构86.Drift mobility 漂移迁移率87.Drift Velocity 漂移速度88.Effective d ensity o f s tates 有效态密度89.Effective mass 有效质量90.Efficiency 效率91.Einstein coefficients 爱因斯坦系数92.Electrical bandwidth of fibers 光纤电子带宽93.Electromagnetic wave 电磁波94.Electron affinity 电子亲和势95.Electron potential energy in a crystal 晶体电子阱能量96.Electro-optic effects 光电子效应97.Energy band 能量带宽98.Energy band diagram 能量带宽图99.Energy level 能级100.E pitaxial growth 外延生长101.E rbium doped fiber amplifier 掺饵光纤放大器102.Excess carrier distribution 过剩载流子扩散103.External photocurrent 外部光电流104.Extrinsic semiconductors 本征半导体105.Fabry-Perot laser amplifier 法布里-珀罗激光放大器106.Fabry-Perot optical resonator 法布里-珀罗光谐振器107.Faraday effect 法拉第效应108.Fermi-Dirac function 费米狄拉克结109.Fermi energy 费米能级110.Fill factor 填充因子111.Free spectral range 自由谱范围112.Fresnel’s equations 菲涅耳方程113.Fresnel’s optical indicatrix 菲涅耳椭圆球114.Full width at half maximum 半峰宽115.Full width at half power 半功率带宽116.Gaussian beam 高斯光束117.Gaussian dispersion 高斯散射118.Gaussian pulse 高斯脉冲119.Glass perform 玻璃预制棒120.Goos Haenchen phase shift Goos Haenchen 相位移121.Graded index rod lens 梯度折射率棒透镜122.Group delay 群延迟123.Group velocity 群参数124.Half-wave plate retarder 半波延迟器125.Helium-Neon laser 氦氖激光器126.Heterojunction 异质结127.Heterostructure 异质结构128.Hole 空穴129.Hologram 全息图130.Holography 全息照相131.Homojunction 同质结132.Huygens-Fresnel principle 惠更斯-菲涅耳原理133.Impact-ionization 碰撞电离134.Index matching 指数匹配135.Injection 注射136.Instantaneous irradiance 自发辐射137.Integrated optics 集成光路138.Intensity of light 光强139.Intersymbol interference 符号间干扰140.Intrinsic concentration 本征浓度141.Intrinsic semiconductors 本征半导体142.Irradiance 辐射SER 激光144.active medium 活动介质145.active region 活动区域146.amplifiers 放大器147.cleaved-coupled-cavity 解理耦合腔148.distributed Bragg reflection 分布布拉格反射149.distributed feedback 分布反馈150.efficiency of the He-Ne 氦氖效率151.multiple quantum well 多量子阱152.oscillation condition 振荡条件ser diode 激光二极管sing emission 激光发射155.LED 发光二极管156.Lineshape function 线形结157.Linewidth 线宽158.Lithium niobate 铌酸锂159.Load line 负载线160.Loss c oefficient 损耗系数161.Mazh-Zehnder modulator Mazh-Zehnder 型调制器162.Macrobending loss 宏弯损耗163.Magneto-optic effects 磁光效应164.Magneto-optic isolator 磁光隔离165.Magneto-optic modulator 磁光调制166.Majority carriers 多数载流子167.Matrix emitter 矩阵发射168.Maximum acceptance angle 最优接收角169.Maxwell’s wave equation 麦克斯维方程170.Microbending loss 微弯损耗171.Microlaser 微型激光172.Minority carriers 少数载流子173.Modulated directional coupler 调制定向偶合器174.Modulation of light 光调制175.Monochromatic wave 单色光176.Multiplication region 倍增区177.Negative absolute temperature 负温度系数 round-trip optical gain 环路净光增益179.Noise 噪声180.Noncentrosymmetric crystals 非中心对称晶体181.Nondegenerate semiconductors 非简并半异体182.Non-linear optic 非线性光学183.Non-thermal equilibrium 非热平衡184.Normalized frequency 归一化频率185.Normalized index difference 归一化指数差异186.Normalized propagation constant 归一化传播常数187.Normalized thickness 归一化厚度188.Numerical aperture 孔径189.Optic axis 光轴190.Optical activity 光活性191.Optical anisotropy 光各向异性192.Optical bandwidth 光带宽193.Optical cavity 光腔194.Optical divergence 光发散195.Optic fibers 光纤196.Optical fiber amplifier 光纤放大器197.Optical field 光场198.Optical gain 光增益199.Optical indicatrix 光随圆球200.Optical isolater 光隔离器201.Optical Laser amplifiers 激光放大器202.Optical modulators 光调制器203.Optical pumping 光泵浦204.Opticalresonator 光谐振器205.Optical tunneling光学通道206.Optical isotropic 光学各向同性的207.Outside vapor deposition 管外气相淀积208.Penetration depth 渗透深度209.Phase change 相位改变210.Phase condition in lasers 激光相条件211.Phase matching 相位匹配212.Phase matching angle 相位匹配角213.Phase mismatch 相位失配214.Phase modulation 相位调制215.Phase modulator 相位调制器216.Phase of a wave 波相217.Phase velocity 相速218.Phonon 光子219.Photoconductive detector 光导探测器220.Photoconductive gain 光导增益221.Photoconductivity 光导性222.Photocurrent 光电流223.Photodetector 光探测器224.Photodiode 光电二极管225.Photoelastic effect 光弹效应226.Photogeneration 光子再生227.Photon amplification 光子放大228.Photon confinement 光子限制229.Photortansistor 光电三极管230.Photovoltaic devices 光伏器件231.Piezoelectric effect 压电效应232.Planck’s radiation distribution law 普朗克辐射法则233.Pockels cell modulator 普克尔斯调制器234.Pockel coefficients 普克尔斯系数235.Pockels phase modulator 普克尔斯相位调制器236.Polarization 极化237.Polarization transmission matrix 极化传输矩阵238.Population inversion 粒子数反转239.Poynting vector 能流密度向量240.Preform 预制棒241.Propagation constant 传播常数242.Pumping 泵浦243.Pyroelectric detectors 热释电探测器244.Quantum e fficiency 量子效应245.Quantum noise 量子噪声246.Quantum well 量子阱247.Quarter-wave plate retarder 四分之一波长延迟248.Radiant sensitivity 辐射敏感性249.Ramo’s theorem 拉莫定理250.Rate equations 速率方程251.Rayleigh criterion 瑞利条件252.Rayleigh scattering limit 瑞利散射极限253.Real image 实像254.Recombination 复合255.Recombination lifetime 复合寿命256.Reflectance 反射257.Reflection 反射258.Refracted light 折射光259.Refractive index 折射系数260.Resolving power 分辩力261.Response time 响应时间262.Return-to-zero data rate 归零码263.Rise time 上升时间264.Saturation drift velocity 饱和漂移速度265.Scattering 散射266.Second harmonic generation 二阶谐波267.Self-phase modulation 自相位调制268.Sellmeier dispersion equation 色列米尔波散方程式269.Shockley equation 肖克利公式270.Shot noise 肖特基噪声271.Signal to noise ratio 信噪比272.Single frequency lasers 单波长噪声273.Single quantum well 单量子阱274.Snell’s law 斯涅尔定律275.Solar cell 光电池276.Solid state photomultiplier 固态光复用器277.Spectral intensity 谱强度278.Spectral responsivity 光谱响应279.Spontaneous emission 自发辐射280.stimulated emission 受激辐射281.Terrestrial light 陆地光282.Theraml equilibrium 热平衡283.Thermal generation 热再生284.Thermal velocity 热速度285.Thershold concentration 光强阈值286.Threshold current 阈值电流287.Threshold wavelength 阈值波长288.Total acceptance angle 全接受角289.Totla internal reflection 全反射290.Transfer distance 转移距离291.Transit time 渡越时间292.Transmission coefficient 传输系数293.Tramsmittance 传输294.Transverse electric field 电横波场295.Tranverse magnetic field 磁横波场296.Traveling vave lase 行波激光器297.Uniaxial crystals 单轴晶体298.UnPolarized light 非极化光299.Wave 波300.W ave equation 波公式301.Wavefront 波前302.Waveguide 波导303.Wave n umber 波数304.Wave p acket 波包络305.Wavevector 波矢量306.Dark current 暗电流307.Saturation signal 饱和信号量308.Fringing field drift 边缘电场漂移plementary color 补色310.Image lag 残像311.Charge handling capability 操作电荷量312.Luminous quantity 测光量313.Pixel signal interpolating 插值处理314.Field integration 场读出方式315.Vertical CCD 垂直CCD316.Vertical overflow drain 垂直溢出漏极317.Conduction band 导带318.Charge coupled device 电荷耦合组件319.Electronic shutter 电子快门320.Dynamic range 动态范围321.Temporal resolution 动态分辨率322.Majority carrier 多数载流子323.Amorphous silicon photoconversion layer 非晶硅存储型324.Floating diffusion amplifier 浮置扩散放大器325.Floating gate amplifier 浮置栅极放大器326.Radiant quantity 辐射剂量327.Blooming 高光溢出328.High frame rate readout mode 高速读出模式329.Interlace scan 隔行扫描330.Fixed pattern noise 固定图形噪声331.Photodiode 光电二极管332.Iconoscope 光电摄像管333.Photolelctric effect 光电效应334.Spectral response 光谱响应335.Interline transfer CCD 行间转移型CCD336.Depletion layer 耗尽层plementary metal oxide semi-conductor 互补金属氧化物半导体338.Fundamental absorption edge 基本吸收带339.Valence band 价带340.Transistor 晶体管341.Visible light 可见光342.Spatial filter 空间滤波器343.Block access 块存取344.Pupil compensation 快门校正345.Diffusion current 扩散电流346.Discrete cosine transform 离散余弦变换347.Luminance signal 高度信号348.Quantum efficiency 量子效率349.Smear 漏光350.Edge enhancement 轮廓校正351.Nyquist frequency 奈奎斯特频率352.Energy band 能带353.Bias 偏压354.Drift current 漂移电流355.Clamp 钳位356.Global exposure 全面曝光357.Progressive scan 全像素读出方式358.Full frame CCD 全帧CCD359.Defect correction 缺陷补偿360.Thermal noise 热噪声361.Weak inversion 弱反转362.Shot noise 散粒噪声363.Chrominance difference signal 色差信号364.Colotremperature 色温365.Minority carrier 少数载流子366.Image stabilizer 手振校正367.Horizontal CCD 水平CCD368.Random noise 随机噪声369.Tunneling effect 隧道效应370.Image sensor 图像传感器371.Aliasing 伪信号372.Passive 无源373.Passive pixel sensor 无源像素传感器374.Line transfer 线转移375.Correlated double sampling 相关双采样376.Pinned photodiode 掩埋型光电二极管377.Overflow 溢出378.Effective pixel 有效像素379.Active pixel sensor 有源像素传感器380.Threshold voltage 阈值电压381.Source follower 源极跟随器382.Illuminance 照度383.Refraction index 折射率384.Frame integration 帧读出方式385.Frame interline t ransfer CCD 帧行间转移CCD 386.Frame transfer 帧转移387.Frame transfer CCD 帧转移CCD388.Non interlace 逐行扫描389.Conversion efficiency 转换效率390.Automatic gain control 自动增益控制391.Self-induced drift 自激漂移392.Minimum illumination 最低照度393.CMOS image sensor COMS 图像传感器394.MOS diode MOS 二极管395.MOS image sensor MOS 型图像传感器396.ISO sensitivity ISO 感光度。

硅基OLED器件结构及其制备方法与流程

硅基OLED器件结构及其制备方法与流程

硅基OLED器件结构及其制备方法与流程硅基OLED(Organic Light Emitting Diode)器件是指利用硅基底材料制作有机发光二极管,具有高效率、低成本、可柔性化等特点,是近年来研究的热点之一、本文将介绍硅基OLED器件的结构、制备方法和流程。

一、硅基OLED的结构硅基OLED器件的结构由五个部分组成,分别是底部透明导电层、有机发光层、电子传输层、空穴传输层和顶部金属电极层。

其中,底部透明导电层和顶部金属电极层是电极,有机发光层是发光源,电子传输层和空穴传输层用于在有机发光层中注入电子和空穴,激发发光。

二、硅基OLED的制备方法和流程硅基OLED的制备过程一般分为以下步骤:1. 制备导电层选择ITO(Indium Tin Oxide)、SnO2 or ZnO作为透明导电层。

将导电层材料涂在硅基底片(silicon wafer)上,再使用光刻技术对导电层进行局部腐蚀或热压(pattern transfer)制造出需要的电极形状。

2. 生长有机发光层将有机材料通过真空蒸镀或溶液法涂覆在导电层之上,形成厚度约为10 nm ~ 1000 nm的有机薄层。

同时,在有机发光层中加入荧光染料或其他功能性有机材料,增强发光效果。

3. 制备电子传输层和空穴传输层电子传输层(ETL)和空穴传输层(HTL)是用来将电子和空穴注入有机发光层的层,它们的制备需要高度精确的条件和技术。

具体方法包括:真空蒸镀、有机物溶液法和有机小分子真空淬火(organic molecular beam deposition,OMBD)等。

4. 生长顶部金属电极层将金属材料通过真空蒸镀或其他化学方法涂覆在电子传输层之上,形成厚度约为100 nm的顶部电极。

有时还需要在顶部电极上加上透明保护层,以防止金属电极受到环境的影响。

5. 封装在硅基OLED器件制备完毕后,需要进行封装保护以防止OLED 材料受到空气中的氧气、水蒸气等影响而失去发光效果。

利用NALM结构的被动锁模掺铒光纤激光器的研究

利用NALM结构的被动锁模掺铒光纤激光器的研究

利用NALM结构的被动锁模掺铒光纤激光器的研究况庆强;桑明煌;聂义友;张祖兴;付贵阳【摘要】为了研究光纤中的非线性效应对锁模脉冲的影响,采用非线性放大环镜来实现被动锁模,在分析非线性放大环镜传输特性理论的基础上,对被动锁模掺铒光纤激光器进行了相关的实验研究.实验中观察到了重复频率为280.2MHz、中心波长是1556.235nm、线宽是0.4nm的稳定的锁模脉冲现象.研究结果对更深入地了解被动锁模产生现象、进一步开展后续研究具有极其重要的意义.【期刊名称】《激光技术》【年(卷),期】2008(032)006【总页数】4页(P631-634)【关键词】激光技术;被动锁模;非线性放大环镜;锁模脉冲【作者】况庆强;桑明煌;聂义友;张祖兴;付贵阳【作者单位】江西师范大学,物理与通信电子学院,南昌,330022;江西师范大学,物理与通信电子学院,南昌,330022;江西师范大学,物理与通信电子学院,南昌,330022;江西师范大学,物理与通信电子学院,南昌,330022;江西师范大学,物理与通信电子学院,南昌,330022【正文语种】中文【中图分类】TN242引言在光纤通信系统中,超短光脉冲光源性能的优劣直接影响着系统传输质量的好坏与容量的大小。

掺铒光纤激光器具有工作阈值低、输出脉宽窄、峰值功率高、脉冲质量好、与传输光纤可高效耦合实现全光通信等优点,在众多有潜力的光源中倍受研究人员的重视,迄今为止已经有了许多的研究方案。

主动的谐波锁模技术是光纤激光器里产生高重复频率短脉冲的一个非常有效的方法[1-4],主动锁模光纤激光器因具有输出脉冲啁啾小、可调谐范围大、重复频率高等优点,被认为是一种极其重要的超短脉冲光源[5-6]。

这种短脉冲产生机制对未来的超高速光通信有很重要的意义。

主动锁模光纤激光器输出谐波脉冲的重复频率等于调制器的调制频率,因而在实际上会受到调制器的最大调制频率的影响,不能达到一个很大的脉冲重复频率。

激光等离子体加速机制研究综述

激光等离子体加速机制研究综述

激光等离子体加速机制研究综述1 研究现状随着激光技术的发展,激光强度不断增强,脉宽不断缩短,对激光等离子体相互作用的研究开辟出了许多新的领域。

激光与等离子体相互作用与激光的强度、波长、脉宽,等离子体状态参数(最主要是密度)密切相关。

随着激光强度变大,开始是线性响应,然后随着激光不断增强,非线性效应和相对论效应开始占主导。

当强度超过1018W/cm2电子的相对论效应必须考虑,加剧了理论研究难度但也催生了更多的物理现象产生。

比如非线性波跛、超高能粒子产生、相对论孤子和涡旋。

而根据等离子体的密度不同,激光与等离子体作用可以分为稀薄等离子体(同气体靶作用)和稠密等离子体(同液、固体作用)。

对于1微米的激光,能在等离子体中传播的临界密度是1.1×1021cm-3,介于气体密度与固液密度之间。

激光脉宽的减小使得激光等离子体相互作用出现新的物理现象。

fs级别的脉宽,对稀薄等离子体可以通过直接的LWFA来加速电子。

超短超强激光驱动电子等离子体加速电子,可获得能量高达1GeV、电荷接近1 n c、方向性优良、能散度小的高性能电子束,从而在高能加速器、聚变物理、短脉冲高亮度X光源产生、实现小型化自由电子激光等领域都有重大的应用价值。

研究激光同等离子体如何作用及粒子加速的机制具有非常重要的意义与价值。

图1、激光强度在CPA技术突破后大幅增强首先,激光同等离子体作用的第一步是材料对激光的吸收,除了普通的逆轫致吸收和共振吸收,在高强度相对论激光还有很多吸收机制,比如真空加热,J×B加热,有质动力直接加速离子,鞘场加速等等,下面根据加速粒子不同逐一介绍各种加速机制1979年,Tajima和Dawson提出用强激光脉冲激发等离子体波来加速电子的机制,这就是直接激光尾场加速(LWFA)[1],原理是超强超短激光脉冲在稀薄等离子体中传播时,纵向的非线性力——有质动力(F p=-q2▽a02/4mw2)将电子推开,共振激发出等离子体波(尾波场)。

[计算机软件及应用]吉林大学MaterialsStudio60培训资料

[计算机软件及应用]吉林大学MaterialsStudio60培训资料
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Thermo Scientific Helios 5 FX DualBeam说明书

Helios 5 FX DualBeamEnabling breakthrough failure analysis for advanced technology nodesThe Helios 5 Dual Beam platform continues to serve the imaging, analysis, and S/TEM sample preparation applications in the most advanced semiconductor failure analysis, process development and process control laboratories.The Thermo Scientific ™ Helios 5 FX ™ DualBeam continues the Helios legacy to the fifth generation combining the innovative Elstar ™ with UC+ technology electron column for high-resolution and high materials contrast imaging, in-lens S/TEM 4 for 3Å in-situ low kV S/TEM imaging and the superior low kV performing Phoenix ™ ion column for fast, precise and sub-nm damagesample preparation. In addition to the industry leading SEM and FIB columns, the Helios 5 FX incorporates a suite of state-of-the-art technologies which enable simple and consistent sample preparation (for high resolution S/TEM imaging and/or Atom Probe microscopy) on even the most challenging samples.High quality imaging at all landing energiesThe ultra-high brightness electron source on the Helios 5 FX System is equipped with 2nd generation UC technology (UC+) to reduce the beam energy spread below 0.2 eV for beam currents up to 100 pA. This enables sub-nanometer resolution and high surface sensitivity at low landing energies. The highly efficient Mirror Detector and In-Column Detector in the Helios 5 FX System come with the ability to simultaneously acquire and mix TLD-SE, MD-BSE and ICD-BSE signals to produce the best overall ultra-high resolution images. Low-loss MD-BSE provides excellent materials contrast with an improvement of up to 1.5x in Contrast-to-Noise ratio, while No-loss ICD-BSE provides materials contrast with maximum surface sensitivity.Shorten time to useable dataThe Helios 5 FX System is the world’s first DualBeam toincorporate a TEM-like CompuStage for TEM lamella sample preparation and combine it with an all new In-lens STEM 4 detector to drastically reduce the time to high quality useable data. The integrated CompuStage is independent of the bulk stage and comes with separate X, Y, Z, eucentric 180° alpha tilt and 200° beta tilt axes enabling SEM endpointing on both sides of S/TEM lamella. The accompanying S/TEM rod is compatible with standard 3 mm TEM grids and enables fast grid exchange without breaking vacuum. In addition, the system is equippedDATASHEETHigh-performance Elstar electron column with UC+monochromator technology for sub-nanometer SEM and S/TEM image resolutionExceptional low kV Phoenix ion beam performance enables sub-nm TEM sample preparation damageSharp, refined, and charge-free contrast obtained from up to 5 integrated in-column and below-the-lens detectors MultiChem Gas Delivery System provides the most advanced capabilities for electron and ion beam induced deposition and etching on DualBeamsEasyLift EX Nanomanipulator enables precise, site-specific preparation of ultra-thin TEM lamellae all while promoting high user confidence and yieldSTEM 4 detector provides outstanding resolution and contrast on thin TEM samplesBacked by the Thermo Fisher Scientfic world class knowledge and expertise in advanced failure analysis forDualBeam applicationsFigure 1. TEM sample preparation using the Thermo Scientific iFAST automation software package and extracted using the EasyLift Nanomanipulator.Figure 2. HRSTEM Bright Field image of a 14 nm SRAM Inverter thinned to 15 nm showing both nFET and pFET structures connected with a metal gate.For current certifications, visit /certifications. © 2020 FEI Company. All rights reserved.All trademarks are the property of Thermo Fisher Scientific and its subsidiaries unless otherwise specified. DS0283-EN-07-2020Find out more at /EM-Saleswith a retractable, annular STEM 4 detector which can be used either in standard mode for real-time STEM endpointing (6Å resolution) or in the new In-lens mode for ultimate imaging performance (3Å resolution). Both modes support improved materials contrast through the use of Bright Field, Dark Field annular and HAADF segments collecting transmitted electrons simultaneously. A new STEM detector enables diffraction imaging and zone axis alignment (automated or manual), enabling highest resolution and contrast on STEM samples. Extreme high resolution, high contrast imaging of ultra-thin lamella is now possible using 30 kV electrons. Having the ability to complete failure analysis work in the DualBeam without exposing the finished sample to ambient air shortens the time to data and reduces the need for standalone S/TEM systems.High quality ultra-thin TEM sample preparationPreparing high quality, ultra-thin TEM samples requires polishing the sample with very low kV ions to minimize damage to the sample. The Thermo Scientific most advanced Phoenix Focused Ion Beam (FIB) column not only delivers high resolution imaging and milling at 30 kV but now expands unmatched FIB performance down to accelerating voltages as low as 500 V enabling the creation of 7 nm TEM lamella with sub-nm damage layers.Enabling flexibilitySmart Alignments actively maintain the system for optimum performance, ready to deliver the highest performance for all users. Patterning improvements ensure the highest quality depositions at any condition, and an extensive automation suite make the Helios 5 the most advanced DualBeam ever assembled—all backed by the Thermo Fisher expert application and service support. Specifications • Electron source–Schottky thermal field emitter, over 1 year lifetime • Ion source–Gallium liquid metal, 1000 hours • Landing Voltage –20 V – 30 kV SEM –500 V – 30 kV FIB • STEM resolution –6Å Standard mode –3Å In-len mode • SEM resolution–Optimal WD0.6 nm @ 2–15 kV 0.7 nm @ 1 kV1.0 nm @ 500 V with beam deceleration –Coincident WD 0.8 nm @ 15 kV 1.2 nm @ 1 kV• Ion beam resolution at coincident point –4.0 nm @ 30 kV using preferred statistical method –2.5 nm @ 30 kV using selective edge method–500 nm @ 500 V using preferred statistical method • EDS resolution–< 30 nm on thinned samples • Gas Delivery–Integrated MultiChem Gas Delivery System –Up to 6 chemistries can be installed –Up to 2 external gasses can be installed • In situ TEM sample liftout –EasyLift EX Nanomanipulator • Stage–5 axis CompuStage with S/TEM holder, equipped with automated insert/retract mechanism and air lock for fast TEM grid exchange without breaking system vacuum –5 axis all piezo motorized bulk stage with automated Loadlock • Sample types–Wafer pieces, packaged parts, grids • Maximum sample size–70 mm diameter with full travel• Application software–iFAST Developers Kit Professional automation software • User interface–Windows ® 10 GUI with integrated SEM, FIB, GIS, simultaneous patterning and imaging mode –Local language support: Check with your local Thermo Fisher sales representatives for available language packs –Two 24-inch widescreen LCD monitors Key options• MultiChem gas chemistries –Range of deposition and etch chemistries • Software–Auto Slice & View ™ software, Magma CAD Navigation • Hardware –EDS and WDS。

VLMU35CL2.-275-120 低功耗紫外视光LED说明书

UVC Emitting Diode in SMD PackageDESCRIPTIONVLMU35CL2.-275-120 is a ceramic based low power UVC LED with silicone lens for long life time. The package size is 3.45 mm x 3.45 mm x 1.38 mm and the radiant power typically 2.5 mW at 20 mA in a wavelength range of 265 nm to 285 nm.PRODUCT GROUP AND PACKAGE DATA •Product group: LED•Package: SMD ceramic•Product series: standard power UV LED•Angle of half intensity: ± 60°•Lead-finishing:Au FEATURES•Ceramic SMT package with silicone lens•Dimension (L x W x H) in mm: 3.45 x 3.45 x 1.38•DC forward current: up to 30 mA•Radiant power (typ.): 2.5 mW at 20 mA and3.5 mW at 30 mA•Leads / terminations finish: gold plated (Au)•Reflow soldering method•MSL 3 according to J-STD-020•Material categorization: for definitions of compliance please see /doc?99912 APPLICATIONS•Sterilization•Medical application•Sensing of gases, germs, DNA, ...SAFETY ADVICESThese LEDs emit very strong UV radiation during operation. Do not look directly into the LED light when in operation as UV radiation can harm your eyes. To prevent inadequate exposure, wear protective eyewear. If LEDs are embedded in devices, please indicate warning labels. Avoid exposure to skin or other tissue during operation. Keep out of the reach of children. Take appropriate precautions around pets and other living organisms to avoid UV exposure.PARTS TABLEPART COLOR RADIANT POWER(mW)atI F(mA)WAVELENGTH(nm)atI F(mA)FORWARD VOLTAGE(V)atI F(mA)TECHNOLOGY MIN.TYP.MAX.MIN.TYP.MAX.MIN.TYP.MAX.VLMU35CL20-275-120Ultraviolet 1.6 2.5-2026527728520 5.0 6.88.020AlGaN ABSOLUTE MAXIMUM RATINGS (T amb = 25 °C, unless otherwise specified)VLMU35CL2.-275-120PARAMETER TEST CONDITION SYMBOL VALUE UNIT DC forward current I F30mA Power dissipation P V0.24W Reverse voltage Not designed for reverse operation Electrostatic discharge HBM: MIL-STD-883 C 3B ESD2000V Junction temperature T j+90°C Operating temperature range T amb-40 to +80°C Storage temperature range T stg-40 to +100°C Solder temperature T sol260°CNote•Tolerances: ± 11 % for φe , ± 0.1 V for V F , ± 3 nm for λpNote•In order to ensure availability, single groups for radiant intensity, wavelength, and forward voltage will not be orderable. Only one group for radiant intensity, wavelength, and forward voltage will be shipped in any one reelOPTICAL AND ELECTRICAL CHARACTERISTICS (T amb = 25 °C, unless otherwise specified) VLMU35CL2.-275-120, ULTRAVIOLETPARAMETER TEST CONDITIONSYMBOLMIN.TYP.MAX.UNIT Forward voltage I F = 20 mA V F 5.0 6.88.0V Radiant powerI F = 20 mA φe 1.6 2.5-mW I F = 30 mA - 3.5-Ratio of radiant intensity/radiant power I F = 20 mA I e /φe -0.25-sr -1Peak wavelength I F = 20 mA λp 265277285nm Angle of half intensityI F = 20 mAϕ-± 60-°Thermal resistance junction to solder-pointSoldered on 20 x 20 x 1.7 (in mm)Al MCPCBR thJS-38-K/WRADIANT POWER CLASSIFICATION (I F = 20 mA)GROUP MIN.MAX.UNIT X11.6-mWPEAK WAVELENGTH CLASSIFICATION (I F = 20 mA)GROUP MIN.MAX.UNIT W1265285nmFORWARD VOLTAGE CLASSIFICATION (I F = 20 mA)GROUP MIN.MAX.UNITV1 5.0 6.0V V2 6.07.0V37.08.0TYPICAL CHARACTERISTICS (T amb = 25 °C, unless otherwise specified)Fig. 1 - Maximum Forward Current vs. Solder Point Temperature Fig. 2 - Relative Radiant Power vs. Forward CurrentFig. 3 - Forward Current vs. Forward VoltageFig. 4 - Relative Radiant Power vs. Wavelength Fig. 5 - Relative Radiant Intensity vs. Angular Displacement Fig. 6 - Relative Radiant Power vs. Junction TemperatureFig. 7 - Relative Radiant Power vs. Junction TemperatureTAPE AND REEL DIMENSIONS in millimeters HANDLING RECOMMENDATIONSIn order to achieve excellent lifetime, the package of these UV-LEDs consists of a ceramic substrate in combination with a UV stable silicone as lens material. Compared to standard materials silicone is generally softer and it tends more to attract dust:•Minimize the level of dirt and dust particles in contact with the LED•Small amounts of particles on the LEDs, although noticeable from a cosmetic point of view, do not affect the performance in terms of brightness, reliability and quality •If cleaning is required, a short rinsing with isopropy alcohol, not longer than 15 seconds, is recommended. Do not use ultrasonic cleaning, it may damage the LED •Do not apply mechanical stress on the silicone lens •Avoid any piercing of the silicone lens by sharp objects •It is recommended to use a suitable pick and place tool for the removal of the LED from blister tape without applying stress to the lens. The recess of the pick-up needle has to be larger than the silicone lens•For manual handling using tweezers make sure that the LED will be touched carefully at the sidewall of the ceramic substrate, but not at the silicone lensSOLDERING PROFILEFig. 8 - Vishay Lead (Pb)-free Reflow Soldering Profile(according to J-STD-020C)BAR CODE PRODUCT LABEL (example only)A.2D barcodeB.Part No: Vishay part numberC.QTY: quantityD.SelCode: selection bin codeE.Country of originF.PTC: production plant codeG.Termination finishH.Region codeI.Serial#: serial numberK.Batch number: year, week, country code, plant code L.SL: sales locationM.Environmental symbols:RoHS, lead (Pb)-free, halogen-free N.Lot numbersDRY PACKINGThe reel is packed in an anti-humidity bag to protect the devices from absorbing moisture during transportation and storage.FINAL PACKINGThe sealed reel is packed into a cardboard box. A secondary cardboard box is used for shipping purposes.RECOMMENDED METHOD OF STORAGEDry box storage is recommended as soon as the aluminum bag has been opened to prevent moisture absorption. The following conditions should be observed, if dry boxes are not available:•Storage temperature 10 °C to 30 °C •Storage humidity ≤ 60 % RH max.After more than 168 h under these conditions moisture content will be too high for reflow soldering.In case of moisture absorption, the devices will recover to the former condition by drying under the following condition:192 h at 40 °C + 5 °C / - 0 °C and < 5 % RH (dry air / nitrogen) or24 h at 60 °C + 5 °C and < 5 % RH for all device containers or24 h at 100 °C + 5 °C not suitable for reel or tubes.An EIA JEDEC ® standard JESD22-A112 level 3 label is included on all dry bags.Example of JESD22-A112 level 3 labelPart No:VLMU35CL20-275-120Q TY: 500S elCode: X1-W1-V2Origin CHINA Machine:01PTC:25Lot1: XXXXXXXXXXLot2:Batch: YYYYWWOOPP Region: 2170 S L: 0010S erial#: XXXXXXXXXXXX Operator: ChkD:VI S HAY H/F AB C D EFGHKMLNIe43168 hESD PRECAUTIONProper storage and handling procedures should be followed to prevent ESD damage to the devices especially when they are removed from the antistatic shielding bag. Electrostatic sensitive devices warning labels are on the packaging.VISHAY SEMICONDUCTORS STANDARDBAR CODE LABELSThe Vishay Semiconductors standard bar code labels are printed at final packing areas. The labels are on each packing unit and contain Vishay Semiconductors specific data.Legal Disclaimer Notice VishayDisclaimerALL PRODU CT, PRODU CT SPECIFICATIONS AND DATA ARE SU BJECT TO CHANGE WITHOU T NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product.Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED。

微电子专业英语词汇

微电子专业英语词汇 IMB standardization office【IMB 5AB- IMBK 08- IMB 2C】Abrupt junction 突变结['brpt] 突然的;Accelerated testing 加速实验[k'selreitid]Acceptor 受主 Acceptor atom 受主原子['tm] n. 原子Accumulation [,kju:mju'lein]积累,堆积Accumulating contact(n. 接触,联系)积累接触Accumulation region['ri:dn]地区积累区 Accumulation layer['lei] 层积累层Active region 有源区['ktiv]积极的,有源的 Active component [km'punnt]元件有源元Active device 有源器件 Activation 激活Activation energy 激活能 Active region 有源(放大)区Admittance [d'mitns]导纳 Allowed band [b?nd]带允带Alloy-junction device ['l]合金结器件 Aluminum(Aluminium) ['lju:minm]铝Aluminum – oxide ['ksaid]铝氧化物 Aluminum passivation [psi'vein]钝化铝钝化Ambipolar [,mbi'pul]双极的 Ambient temperature ['mbint]环境温度Amorphous ['m:fs]无定形的,非晶体的 Amplifier ['mplifai]功放扩音器放大器Analogue(Analog) ['nlɡ] comparator ['kmpreit]模拟比较器 Angstrom ['strm]埃Anneal ['ni:l]退火 Anisotropic [n,aisu'trpik]各向异性的Anode ['nud]阳极 Arsenic ['ɑ:s?nik (AS) 砷Auger [':ɡ]俄歇 Auger process 俄歇过程Avalanche ['vlɑ:nt]雪崩 Avalanche breakdown(击穿) 雪崩击穿Avalanche excitation [,eksi'tei?n](激发)雪崩激发Background(背景,本底,基底) carrier 本底载流子 Background doping 本底掺杂Backward ['bkwd]反向 Backward bias ['bai?s](偏置,)偏爱反向偏置Ballasting ['blst] resistor 整流电阻 Ball bond [b?nd](结合)球形键合Band 能带 Band gap [ɡ?p](间隙)能带间隙Barrier 势垒 Barrier layer 势垒层Barrier ['bri] width 势垒宽度 Base 基极Base contact 基区接触 Base stretching 基区扩展效应Base transit(运输)time基区渡越时间 Base transport efficiency [i'fi?nsi](效率)基区输运系数Base-width modulation [,mdju'lein(调制)基区宽度调制 Basis vector ['vekt]矢量基矢Bias 偏置 Bilateral [,bai'ltrl] switch 双向开关Binary ['bain?ri]code(代码)二进制代码Binary compound semiconductor二元化合物半导体Bipolar [bai'pul]双极性的 Bipolar Junction Transistor (晶体管)(BJT)双极晶体管Bloch [bl?k]布洛赫 Blocking ['blki](截止,阻塞) band 阻挡能带Blocking contact 阻挡接触 Body(身体,主题) - centered(居中的)体心立方Body-centred cubic ['kju:bik]立方体structure ['strkt]结构体立心结构 Boltzmann 波尔兹曼Bond 键、键合 Bonding electron 价电子Bonding pad 键合点 Bootstrap circuit ['s:kit]电路自举电路Bootstrapped emitter [i'mit]发射器 follower(追随者)自举射极跟随器 Boron ['b:rn]硼Borosilicate [,b:ru'silikit]硼硅酸盐 glass 硼硅玻璃 Boundary condition 边界条件Bound electron 束缚电子 Breadboard 模拟板、实验板Break down 击穿 Break over 转折Brillouin 布里渊 Brillouin zone 布里渊区Built-in 内建的 Build-in electric field 内建电场Bulk [b?lk]体/体内 Bulk absorption 体吸收Bulk generation 体产生 Bulk recombination [,ri:kmbi'nein]体复合Burn - in 老化 Burn out 烧毁Buried ['berid]埋葬的 channel埋沟 Buried diffusion扩散 region 隐埋扩散区Can 外壳 Capacitance[k'p?st()ns]电容Capture俘获 cross section 俘获截面 Capture carrier 俘获载流子Carrier 载流子、载波 Carry bit 进位位Carry-in bit 进位输入 Carry-out bit 进位输出Cascade [k?s'keid]级联,串联级联 Case 管壳Cathode['kθud]阴极 Center 中心Ceramic [si'r?mik]陶瓷(的) Channel['tnl] (频道)沟道Channel breakdown 沟道击穿 Channel current 沟道电流Channel doping 沟道掺杂 Channel shortening 沟道缩短Channel width 沟道宽度 Characteristic impedance[im'pi:d?ns]特征阻抗Charge (控告)电荷,充电 Charge-compensation[,kmpen'sein](补偿) effects 电荷补偿效应Charge conservation(保存,保持) 电荷守恒Charge neutrality[nju'trlt](中性) condition电中性条件Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemmical etching[nju'trlt]化学腐蚀法 Chemically-Polish['pl](磨光)化学抛光Chemmically-Mechanically [m'knkl](机械地)Polish (CMP) 化学机械抛光 Chip 芯片Chip yield(产量)芯片成品率 Clamped 箝位Clamping diode 箝位二极管 Cleavage['klivd] plane(平面)解理面Clock rate(比率)时钟频率 Clock generator 时钟发生器Clock flip-flop(触发器)时钟触发器 Close-packed structure(构造)密堆积结构Close-loop(环) gain(获利,增加)闭环增益 Collector 集电极Collision[k'l()n](冲突)碰撞 Compensated(补偿) OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common-gate/drain/source connection 共栅/漏/源连接Common-mode gain 共模增益 Common-mode input 共模输入Common-mode rejection(抑制,拒绝)ratio (CMRR) 共模抑制比Compatibility[km,pt'blt]兼容性 Compensation 补偿Compensated impurities(杂质)补偿杂质 Compensated semiconductor 补偿半导体Complementary(补足的) Darlington circuit(电路,回路)互补达林顿电路Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor(晶体管)(CMOS) 互补金属氧化物半导体场效应晶体管Complementary error function(功能,函数)余误差函数Computer-aided【辅助的】design (CAD)/test(CAT)/manufacture(CAM)Compound['kmpand] Semiconductor 化合物半导体 Conductance[kn'dkt()ns]电导Conduction(传导band (edge) 导带(底) Conduction level/state 导带态Conductor 导体 Conductivity 电导率Configuration(配置)组态 Conlomb['kulm]库仑Conpled Configuration Devices 结构组态 Constants(常量,常数)物理常数Constant energy surface 等能面 Constant-source diffusion(扩散,传播)恒定源扩散Contact(联系,接触)接触 Contamination[kn,tm'nen]玷污Continuity[,knt'njut](连续性)equation(方程式,等式)连续性方程Contact hole孔接触孔Contact potential(潜能,潜在的)接触电势 Continuity condition 连续性条件Contra['kntr]相反 doping 反掺杂 Controlled 受控的Converter[kn'vt](converter转变,转换)转换器 Conveyer[kn've]传输器Copper(铜) interconnection[,ntk'nkn](互联) system 铜互连系统 Couping 耦合Covalent[k'vel()nt](共价的)共阶的 Crossover 跨交Critical (批评的)临界的 Crossunder 穿交Crucible['krusb()l]坩埚Crystal defect缺陷/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Current density(密度)电流密度 Curvature'kvt曲率Cut off 截止Current drift(漂移)/dirve/sharing电流漂移/驱动/共享Current Sense(感觉,检测)电流取样 Curvature 弯曲Custom(风俗,习惯,定制的integrated circuit 定制集成电路 Cylindrical 柱面的Czochralshicrystal 直立单晶crystal(晶体,单晶)Czochralski technique 切克劳斯基技术(Cz 法直拉晶体 J)Dangling ['d?g()l;bonds 悬挂键 Dark current 暗电流Dead time 空载时间 Debye length 德拜长度德布洛意 Decderate 减速Decibel ['des?bel] (dB) 分贝 Decode 译码Deep acceptor level 深受主能级 Deep donor['dn(捐赠者level 深施主能级Deep impurity(杂质,不存,不洁)level 深度杂质能级 Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体 Degeneracy 简并度Degradation[,degr'de()n]退化 Degree Celsius(centigrade) /Kelvin 摄氏/开氏温度Delay 延迟 Density 密度Density of states 态密度 Depletion 耗尽Depletion approximation 耗尽近似 Depletion contact 耗尽接触Depletion depth 耗尽深度 Depletion effect 耗尽效应Depletion layer 耗尽层 Depletion MOS 耗尽 MOSDepletion region 耗尽区 Deposited film(电影,薄膜) 淀积薄膜Deposition process 淀积工艺 Design rules 设计规则Die 芯片(复数 dice) Diode 二极管Dielectric 介电的 Dielectric isolation(隔离。

表面等离子体激元纳米激光器技术及应用研究进展

表面等离子体激元纳米激光器技术及应用研究进展陈泳屹;佟存柱;秦莉;王立军;张金龙【摘要】Conventional semiconductor lasers suffer from the scale of the diffraction limit due to the light to be confined by the optical feedback systems. Therefore, the scales of the lasers cannot be miniaturized because their cavities cannot be less than the half of the lasing wavelength. However, lasers based on the Surface Plas- mon Polaritons(SPPs) can operate at a deep sub-wavelength, even nanometer scale. Moreover, the develop- ment of modern nanofabrication techniques provides the fabrication conditions for micro - or even nanometer scale lasers. This paper reviews the progress in nano-lasers based on SPPs that have been demonstrated re-cently. It describes the basic principles of the SPPs and gives structures and characteristics for several kinds of nanometer scale lasers. Then, it points out that the major defects of the nanometer scale lasers currently are focused on higher polariton losses and the difficultiesin fabrication and electronic pumping technologies men- tioned above. Finally, the paper considers the research and application prospects of the nanometer scale lasers based on the SPPs.%传统半导体激光器由于采用光学系统反馈而存在衍射极限,其腔长至少是其发射波长的一半,因此难以实现微小化。

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(1)Biblioteka where Es would be the electric field in the direction of the bunch's motion if the motion was straight, x is the transverse displacement from the line (in the bend plane) and R is the bend radius. Integrating over a uniform transverse bunch density, this field leads to an rms normalized emittance growth of ∆ε n ≈ 1 2 I b a2 α ln IA a δ 2 (2)
We have designed and are building a subpicosecond electron injector. The injector is based on an 8 MeV photoinjector, used previously at Los Alamos in the APEX experiment. The nominal design includes magnetically compressing a 20 ps long, 3 nC bunch to a FWHM bunch length of 2/3 ps (peak current in excess of 3 kA) using a four dipole chicane buncher. The geometrical averaged transverse normalized transverse emittance after compression is about 15 π mm mrad. and in particular the four-dipole chicane compressor. Next we will provide simulation results describing the linac's predicted performance. In the final section we will discuss the status of the machine and future plans.
_____________________________ * Work supported by the Los Alamos Laboratory Directed Research and Development program and by a Los Alamos CRADA with Grumman, CRADA number LA93C10102, under the auspices of the US Department of Energy. ** EG&G, Los Alamos, NM 87544
I. INTRODUCTION
The prospect of advanced accelerator applications such as linear colliders [1,2] and short-wavelength free-electron lasers [3,4] has motivated research into developing shorter and shorter electron bunches with high brightness. The current state-of-the art bunch compression is from 10 ps to 0.6 ps at 37 MeV with 0.15 nC, with a transverse normalized emittance of about 25 π mm mrad [5]. Also of note is the compression reported using an alpha-magnet and rf gun [6], which has reported bunch lengths as low as 0.1 ps, but with charges on the order of 0.05 nC. These combinations of charge, bunch length, and emittance are not sufficient to meet the requirements for the advanced accelerator applications. In order to further extend compression technology, we have designed and are currently commissioning an 8-MeV linac which has a predicted compression capability down to 0.7 ps for charges up to 3 nC, with a final transverse normalized emittance of about 15 π mm mrad. This machine, the Subpicosecond, High-brightness Accelerator Facility, is the first linac designed specifically for performing compression experiments, and includes diagnostic features required for picosecond-type bunches. This linac will be used for measuring noninertial emittance-growth mechanisms, which may exist in magnetic compression systems [7]. This will require development of a new emittance measurement technique using beam-position monitors [8]. In addition, this linac will be used to drive an extreme ultraviolet (EUV) source, using the anomalous energy loss of a short electron bunch in a plasma due to the induced wakefield [9,10]. This type of source is considered as an option for next-generation lithography. In this paper we will first discuss the physics motivation for this experiment, including the noninertial emittance growth mechanisms and the EUV radiation mechanism. In the following section we will describe the design of the linac,
II. PHYSICS MOTIVATION
If an electron beam is not accelerating, it is easy to show that both the transverse and longitudinal space-charge forces scale inversely with the square of the relativistic mass factor. Because of this fact, designs for advanced accelerators which include bunch compression have the bunch compression occurring when the beam is at a relatively high energy (often greater than a GeV). However, it has been recently shown that this scaling for the space-charge forces does not hold for beams being bent in a dipole field [7]. Direct calculation of the longitudinal field from a moderate length line of charge that is bending yields Eθ = Es 1 / γ 2 − β 2 x / R
where α is the bend angle, I is the peak bunch current, I A is about 17 kA, a is the beam radius, b is the beampipe radius, and δ is the bunch length. This expression can be in turn integrated through a bunch compressor, resulting in this prediction for the emittance growth: ∆ε n ≈ 1 2 Io b a 2 Io I p α ln ln + − 1 I A a δ I p Io 2 , (3)
SUBPICOSECOND, ULTRA-BRIGHT ELECTRON INJECTOR*
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