MBRM140T1G SOD-123肖特基二极管原厂DCY品牌推荐
SS515 SMC(DO-214AB)肖特基二极管原厂DCY品牌推荐
SS52 THRU SS520SCHOTTKY BARRIER RECTIFIERReverse Voltage - 20 to 200 Volts Forward Current - 5.0AmperesFEATURESMECHANICAL DATAMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSPlastic package has Underwriters Laboratory Flammability Classification 94V-0Metal silicon junction ,majority carrier conduction For surface mount applications Low power loss ,high efficiencyHigh current capability ,Low forward voltage drop Low profile packageBuilt-in strain relief ,ideal for automated placement For use in low voltage ,high frequency inverters,free wheeling ,and polarity protection applicationsHigh temperature soldering guaranteed:260 C/10 seconds at terminalsCase : JEDEC SMC(DO-214AB) molded plastic bodyT erminals : solder plated ,solderable per MIL-STD-750,method 2026Polarity : color band denotes cathode end Weight : 0.007ounce,0.21 gram(Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive load. For capacitive load,derate by 20%.)Dimensions in inches and (millimeters)SMC(DO-214AB)0.260(6.60)0.305(7.75)Notes : 1.Pulse test: 300 s pulse width,1% duty cycle2. P .C.B. mounted 0.55X0.55"(14X14mm) copper pad areas3.Measured at 1MHz and reverse voltage of4.0 volts10.010.0010.0110.110200.11030609012050101101000.20.40.60.81.01.61.41.2FIG.1-FORWARD CURRENT DERATING CURVEFIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENTFIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICSFIG.4-TYPICAL REVERSE CHARACTERISTICSI N S T A N T A N E O U S F O R W A R D C U R R E N T ( A M P E R E S )I N S T A N T A N E O U S R E V E R S E C U R R E N T (m A )P E A K F O R W A R D S U R G EC U R R E N T (A MP E R E S )INSTANTANEOUS FORWARD VOLTAGE (VOLTS)REVERSE VOLTAGE. VOLTS T , PULSE DURATION ,sec.PERCENT OF RATED PEAK REVERSE VOLTAGE%NUMBER OF CYCLES AT 60Hz101100.10.10.011101001001000100FIG.5-TYPICAL JUNCTION CAPACITANCEFIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCEJ U N C T I O N C A P A C I T A N C E (p F )T R A N S I E N T T H E R M A L I M P E D A N C E , C / W204060801001201502.03.04.05.01.0A V E R A G E F O R W A R D C U R R E N T A M P E R E SLEAD TEMPERATURE ( C)2SS52 THRU SS520SCHOTTKY BARRIER RECTIFIERReverse Voltage - 20 to 200 Volts Forward Current - 5.0Amperes。
PMEG6002EB肖特基二极管厂家DCY品牌推荐
time 1ms 300ms
1 0 5 10 15 20 25 30
10 0.001
0.01
0.1
1
10
100
1000
REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS
TIME : t (s) Rth-t CHARACTERISTICS
Non-repetitive forward current surge peak
Symbol VRM VR Io IFSM Tj Tstg
Conditions Duty≦0.5 Direct reverse voltage
Glass epoxy board mounted, 60Hz half sin wave,
2.40±0.05
8.0±0.1
0.6
1.25±0.06 0
0.35±0.03
0.90±0.03
4.0±0.1
2.0±0.05
Φ0.5±0.05
T2R
lAbsolute Maximum Ratings (Tc= 25°C) Parameter Repetitive peak reverse voltage Reverse voltage Average forward rectified current
1/4
DMEG 6002EB
lElectrical Characteristic Curves
Data Sheet
1000
100000 Tj = 125°C Tj = 125°C
FORWARD CURRENT : IF (mA)
REVERSE CURRENT : IR (mA)
DSK23 SOD-123肖特基二极管原厂DCY品牌推荐
VRRM
20
30
40 50 60
70
80 90 100 VOLTS
VRMS
14
21
28 35 42
49
56 63
70 VOLTS
VDC 20 30 40 50 60 70 80 90 100 VOLTS
I(AV)
2.0
Amp
Peak forward surge current
8.3ms single half sine-wave superimposed on
inductive Load
0.8
0.4
DSK22-DSK26
DSK27-DSK210
0
0
25
50
75
100 125 150
175
AMBIENT TEMPERATURE, C
FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
20
10
1
0.1
0.01
Catalog Number Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current
SYMBOLS DSK22 DSK23 DSK24 DSK25 DSK26 DSK27 DSK28 DSK29 DSK210 UNITS K22 K23 K24 K25 K26 K27 K28 K29 K210
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
MBR1040CT-MBR1040FCT ASEMI高压大功率肖特基二极管规格
MBR1040CT MBR1040FCT MBR1040DC肖特基二极管参数PDF规格书MBR1040FCT等肖特基均采用俄罗斯Mikron芯片，28条台湾健鼎测试线，确保MBR1040FCT的高可靠性肖特基二极管MBR1040FCT参数规格：肖特基二极管MBR1040FCT电流：10A；肖特基二极管MBR1040FCT电压：40V；肖特基二极管MBR1040FCT管装：50/管；盒装：1000PCS/盒。
肖特基二极管广泛应用于开关电源、变频器、驱动器等电路，作高频、低压、大电流整流二极管、续流二极管、保护二极管使用，或在微波通信等电路中作整流二极管、小信号检波二极管使用。
MBR1040CT ITO-220AB肖特基二极管PDF资料MBR1040CT肖特基类型：高结温芯片，品牌：ASEMI，应用市场：电源，小家电，LED电源，各式充电器，开关电源，LED显示屏等。
MBR1040CT肖特基相关参数如下：MBR1040CT电压Vrrm:40VMBR1040CT电流If平均：10AMBR1040CT正向电压Vf最大：0.54VMBR1040CT电流，Ifs最大：120AMBR1040CT工作温度范围：-40°C to+150°CMBR1040CT封装形式：TO-220/TO-220F/ITO-220MBR1040CT反向恢复电流，Irrm:20UA肖特基系列型号：MBR1040CT,MBR1045CT,MBR1060CT,MBR1060FCT,MBR10100CT,MBR10100FCT,MBR10150FCT,MBR10150CT,MBR10200FCT,MBR10200CT肖特基二极管封装：TO-251,TO-252,TO-263,TO-220,TO-247,TO-3P。
DC1234推荐LDO原厂DCY品牌
Output Voltage : 50mV increments A
e.g. ②=1,③=5,④=A 1.55V
Active 'High'
①
B
(no pull-down resistor built in)
Package Type
⑤
M
SOT-23-5L
C
Active 'Low' (pull-up resistor built in)
■ Features
Output Voltage Range: 0.85V to 1.8V (selectable in 50mV steps)
Highly Accurate : ±2%（less than 1.5V is ±30mV) Dropout Voltage : 300mV @ 100mA (1.5V type) High Ripple Rejection: 60dB (10kHz) Low Power Consumption: 50μA (TYP.) Maximum Output Current : 300mA（VIN≥2.5V） Standby Current : less than 0.1μA Internal protector: current limiter and short protector Small packages: SOT-23-5,SOT-353 and other
■ Applications
Mobile phones Cordless phones Modem Portable games
Portable AV equipment Reference voltage Battery powered equipment PCMCIA cards
常用肖特基二极管参数
常用肖特基二极管参数型号制造商封装 If/A Vrrm/V 最大Vf/V1SS294 TOS SC-59 0.140 0.60BAT15-099 INF SOT143 0.11 40.32BAT54A PS SOT23 0.20 30 0.5010MQ060N IR SMA 0.7790 0.6510MQ100N IR SMA 0.77 100 0.9610BQ015 IR SMB 1.0015 0.34SS12 GS DO214 1.0020 0.50MBRS130LT3 ON - 1.0030 0.3910BQ040 IR SMB 1.0040 0.53RB060L-40 ROHM PMDS 1.00 40 0RB160L-40 ROHM PMDS 1.00 400.55SS14 GS DO214 1.0040 0.5MBRS140T3 ON - 1.0040 0.10BQ060 IR SMB 1.0060 0.57SS16 GS DO214 1.0060 0.7510BQ100 IR SMB 1.00 100 0.78MBRS1100T3 ON - 1.00 100 0.7510MQ040N IR SMA 1.10 40 0.5115MQ040N IR SMA 1.7040 0.55PBYR245CT PS SOT223 2.00 450.4530BQ015 IR SMC 3.0015 0.3530BQ040 IR SMC 3.0040 0.5130BQ060 IR SMC 3.0060 0.5830BQ100 IR SMC 3.00100 0.79STPS340U STM SOD6 3.00 40 0.84MBRS340T3 ON - 3.0040 0.52RB051L-40 ROHM PMDS 3.00 400.45MBRS360T3 ON - 3.0060 0.7030WQ04FN IR DPAK 3.3040 0.6230WQ06FN IR DPAK 3.30 60 0.7030WQ10FN IR DPAK 3.30 100 0.9130WQ03FN IR DPAK 3.50 30 0.5250WQ03FN IR DPAK 5.50 30 0.5350WQ06FN IR DPAK 5.50 60 0.576CWQ06FN IR DPAK 6.60 60 0.586CWQ10FN IR DPAKpr 6.60 100 0.811N5817 ON 轴向 1.00 20 0.751N5818 ON 轴向 1.00 30 0.55SB130 GS 轴向 1.00 30 0.50 1N5819 ON 轴向 1.00 40 0.60 MBR150 ON 轴向 1.00 50 1.00 MBR160 ON 轴向 1.00 60 1.00 11DQ10 IR 轴向 1.10 100 0.8511DQ04 IR 轴向 1.10 40 0.5511DQ05 IR 轴向 1.10 50 0.5811DQ06 IR 轴向 1.10 60 0.58MBRS340TR IR SMC 3.0040 0.431N5820 ON 轴向 3.00 20 0.851N5821 ON 轴向 3.00 30 0.381N5822 ON 轴向 3.00 40 0.52MBR360 ON 轴向 3.00 60 1.00SS32 GS DO214 3.0020 3.00SS34 GS DO214 3.0040 0.5031DQ10 IR DO201 3.30 100 0.85SB530 GS 轴向 5.00 30 0.57SB540 GS DO201 5.0040 0.5750SQ080 IR 轴向 5.00 80 0.6650SQ100 IR 轴向 5.00 100 0.66MBR735 GS TO220 7.5035 0.84MBR745 GS TO220 7.5045 0.84MBR745 IR TO220 7.5045 0.8480SQ040 IR 轴向 8.00 40 0.53STQ080 IR TO220 8.0080 0.728TQ100 TO220 8.00 100 0.7280SQ040 IR 轴向 8.00 40 0.5380SQ035 IR DO204AR 8.00 3 5 0.53HFA16PA60C IR TO247CT 8.00 6001.7095SQ015 轴向 9.00 15 0.3190SQ040 轴向 9.00 40 0.4810TQ045 TO220 10.0045 0.57MBR1035 GS TO220 10.0035 0.84MBR1045 ON TO220 10.0045 0.84STPS1045F ON ISO220 10.00 450.64MBR2060CT ON TO220 10.00 600.85MBR1060 ON TO220 10.0060 0.95PBYR10100 PS TO220 10.00 10 0 0.7010TQ040 IR TO220 10.0040 0.57MBR1045 IR TO220 10.0045 0.8410CTQ150-1 IR D2pak 10.00 15 0 0.7340L15CTS IR D2pak 10.00150 0.4185CNQ015A IR D61 80.0015 0.32150K40A IR D08 150.00400 1.3312CTQ040 IR TO220 12.00 450.73MBR1545CT IR TO220pr 15.00 45 0.72MBR1660 GS TO220 16.00 60 0.7516CTQ080 IR TO220pr 16.00 80 0.7216CTQ100 IR TO220pr 16.00 100 0.7216CTQ100-1 IR D2Pak 16.00 1000.7218TQ045 ON TO220 18.0045 0.60HFA16PB120 IR TO247 16.00 12003.00MBR1645 IR TO220AC 16.00 450.6319CTQ015 IR TO220 19.00 150.3620CTQ045 IR TO220pr 20.00 45 0.6420TQ045 IR TO220 20.0045 0.57MBR2045CT IR TO220pr 20.00 45 0.84MBR2090CT IR TO220pr 20.00 90 0.80MBR20100CT IR TO220pr 20.00 100 0.80MBR20100CT-1IR TO262 20.00 1000.80MBR2080CT IR TO220AB 20.00 800.85MBR2545CT IR TO220AB 30.00 450.82MBR3045WT IR TO247 30.00 4532CTQ030 IR TO220pr 30.00 30 0.4932CTQ303-1 IR D2Pak 30.00 300.4930CPQ060 IR TO220pr 30.00 60 0.6230CPQ080 IR TO247AC 30.00 800.8630CPQ100 IR TO247pr 30.00 100 0.8630CPQ150 IR TO247pr 30.00 150 1.0040CPQ040 IR TO247pr 40.00 40 0.4940CPQ045 IR TO247pr 40.00 45 0.4940CPQ050 IR TO247AA 40.00 500.5340CPQ100 IR TO247pr 40.00 100 0.7740L15CT IR TO220AB 40.00 150.5347CTQ020 IR TO220 40.00 200.3448CTQ060 IR TO220 40.00 600.5840L15CW IR TO247 40.0015 0.5242CTQ030 IR TO220 40.00 300.3840CTQ045 IR TO220 40.00 450.6840L45CW IR TO247 40.0045 0.7040CPQ060 ON TO247 40.00 600.68MBR4045WT IR TO247 40.00 450.59MBR4060WT IR TO247 40.00 600.7743CTQ100 IR TO220 40.00 10 0 0.9852CPQ030 IR TO247 50.0030 0.38MBR6045WT IR TO247pr 60.00 450.73STPS6045CPI ON TOP3I 60.00 450.8465PQ015 IR TO247 65.0015 0.5072CPQ030 IR TO247AC 70.00 300.5185CNQ015 IR D61 80.0015 0.3283CNQ100 IR D61 80.00100 0.6780CPQ020 IR TO247 80.0020 0.3282CNQ030A IR D61 80.0030 0.3782CNQ045A IR D61 80.0045 0.4783CNQ100A IR D61 80.00100 0.67120NQ045 IR HALFPAK 120.00 450.52125NQ015 IR D67 120.0015 0.33122NQ030 IR D67 120.0030 0.41STPS16045TV ON ISOTOP 160.00 450.95182NQ030 IR D67 180.0030 0.41200CNQ040 IR TO244AB 200.00 400.54200CNQ045 IR TO244AB 200.00 450.54200CNQ030 IR TO244AB 200.00 300.48STPS24045TV ON ISOTOP 240.00 450.91203CMQ080 IR TO244 200.00 8 0 1.03240NQ045 IR HALFPAK 240.00 450.55301CNQ045 IR TO244 300.00 4 5 0.59403CNQ100 IR TO244AB 400.00 1000.83440CNQ030 IR TO244AB 440.00 300.41（注：素材和资料部分来自网络，供参考。
SS34 SMC(DO-214AB)肖特基二极管原厂DCY品牌推荐
SS32 THRU SS36SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERReverse Voltage -20 to 60 Volts Forward Current -3.0 AmperesFEATURES♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0♦ For surface mount applications ♦ Low profile package♦ Built-in strain relief, ideal for automated placement ♦ Easy pick and place ♦ Metal silicon junction, majority carrier conduction♦ Low power loss, high efficiency♦ High current capability, low forward voltage drop♦ For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications ♦ High temperature soldering:250°C/10 seconds at terminalsMECHANICAL DATACase:JEDEC DO-214AB molded plastic bodyTerminals:Solder plated, solderable per MIL-STD-750,Method 2026Polarity:Color band denotes cathode end Weight:0.007 ounce 0.25 gramMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSRatings at 25°C ambient temperature unless otherwise specified.SYMBOLS SS32SS33SS34SS35SS36UNITSDevice marking codeS2S3S4S5S6Maximum repetitive peak reverse voltage V RRM 2030405060Volts Maximum RMS voltage V RMS 1421283542Volts Maximum DC blocking voltageV DC 2030405060Volts Maximum average forward rectified current at T L (SEE FIG.1) (NOTE 2)I (AV) 3.0Amps Peak forward surge current8.3ms single half sine-wave superimposed on I FSM100.0Ampsrated load (JEDEC Method)Maximum instantaneous forward voltage at 3.0A(NOTE 1)V F 0.500.75Volts Maximum DC reverse current (NOTE 1)T A =25°C 0.5at rated DC blocking voltage T A =100°C I R 20.010.0mA Typical thermal resistance (NOTE 2)R ΘJA 55.0R ΘJL 17.0°C/WOperating junction temperature range T J -55 to +125-55 to +150°C Storage temperature rangeT STG-55 to +150°CNOTES:(1) Pulse test:300µs pulse width, 1% duty cycle(2) P .C.B.mounted 0.55 x 0.55”(14 x 14mm) copper pad areasDO-214ABDimensions in inches and (millimeters)。
肖特基二极管参数表
肖特基二极管参数表（原创版）目录1.肖特基二极管的概念与特点2.肖特基二极管的参数表及其含义3.肖特基二极管的应用领域4.肖特基二极管的发展前景正文一、肖特基二极管的概念与特点肖特基二极管，又称为肖特基势垒二极管，是一种金属与半导体接触的电子器件。
它具有很高的工作速度、较低的正向电压和较大的反向电流。
肖特基二极管的这些特性使其在电子设备中具有广泛的应用。
二、肖特基二极管的参数表及其含义肖特基二极管的参数表包括以下几个主要参数：1.最大重复峰值反向电压（VRRM）：表示肖特基二极管能够承受的最大重复峰值反向电压。
例如，MBR10200CT 肖特基二极管的 VRRM 为 200V。
2.最大直流闭锁电压（VDC）：表示肖特基二极管在最大直流电压下能够正常工作的电压值。
例如，MBR10200CT 肖特基二极管的 VDC 为 200V。
3.最大正向平均整流电流（I(AV)）：表示肖特基二极管在最大正向电压下能够通过的平均整流电流。
例如，MBR10200CT 肖特基二极管的 I(AV) 为 10.0A。
4.最大瞬时正向电压（VF）：表示肖特基二极管在最大正向电流下能够承受的瞬时正向电压。
例如，MBR10200CT 肖特基二极管的 VF 为 0.92V。
5.额定直流阻断电压下的最大直流反向电流（IR）：表示肖特基二极管在最大直流阻断电压下能够承受的最大直流反向电流。
例如，MBR10200CT 肖特基二极管的 IR 在最大直流阻断电压 TA25 下为0.1mA，在最大直流阻断电压 TA125 下为 20.0mA。
6.工作温度和存储温度范围（TJ,TSTG）：表示肖特基二极管能够正常工作的温度范围。
例如，MBR10200CT 肖特基二极管的工作温度和存储温度范围为 -65to 175。
三、肖特基二极管的应用领域肖特基二极管广泛应用于各种电子设备中，如电源开关、稳压器、充电器、电视机、收音机等。
其高速开关特性使得肖特基二极管在高频应用领域具有优势。
MBR20100FCT-ASEMI肖特基二极管怎么选用？
MBR20100FCT-ASEMI肖特基二极管怎么选用？编辑-zASEMI肖特基二极管MBR2O1OOFCT是电子产品生产中不可缺少的重要保护器件,MBR2O1OOFCT尤其广泛应用于便携式电子产品和开关电源，深受电子行业的喜爱。
然而, 在肖特基二极管市场，如何选择合适产品的肖特基二极管呢？MBR20100FCT参数描述型号：MBR2O1OOFCT封装：TO-220特性：大功率肖特基二极管电性参数:20A 100V芯片材质：Mikron正向电流(⑹:20A芯片个数：2正向电压(VF)： 0.8V芯片尺寸：102mil浪涌电流Ifsm： 200A漏电流(lr)： 0.05mA工作温度：∙65~+175"C恢复时间(Trr)： 5nS引线数量：3MSEMII肖特基二极管MBR20100FCT选型的关键参数：1：VR连续反向电压。
如果肖特基MBR20100FCT两端的反向电压超过这个电压，肖特基就会被击穿并导通。
2： VF正向导通压降。
这是导通时肖特基MBR20100FCT两端的电压降。
3： IF连续正向电流。
如果肖特基MBR20100FCT的正向电流超过这个值，肖特基将被烧断。
4： IR反向漏电流。
根据肖特基MBR20100FCT的特性，该参数会随着温度的升高而增大。
因此，设计人员在设计PCB或考虑使用环境时，应在设计中考虑反向泄漏。
5： TRR反向恢复时间。
这个参数决定了肖特基MBR20100FCT可以在多高频的电路中使用。
6： IFSM最大浪涌电流。
肖特基MBR20100FCT允许过大的电流流动，但电流必须是瞬时的。
肖特基二极管在电源中的优缺点：肖特基二极管MBR20100FCT优点：1：低压降，低损耗电压。
2：开关速度快，损耗低，适用于高频电路。
肖特基二极管MBR20100FCT的缺点：1：反向偏压较低，不能承受过大的反向电压。
2：反向漏电具有正温度系数，当温度升高时，IR反向泄漏会增加（这是设计人员容易忽略的参数）。
SS38肖特基二极管原厂DCY品牌推荐
SS32 ...... SS310表面安装肖特基二极管反向电压 20 ---100 V正向电流 3.0 A极限值和温度特性 TA = 25℃ 除非另有规定。
Maximum Ratings & Thermal CharacteristicsRatings at 25℃ ambient temperature unless otherwise specified.Surface Mount Schottky Barrier RectifierReverse Voltage 20 to 100 VForward Current 3.0 A·正向压降低。
Low Forward Voltage Drop·大电流承受能力。
High Current Capability ·高温焊接保证 High temperature soldering guaranteed:250℃/10 秒, 0.375" (9.5mm)引线长度。
250℃/10 seconds, 0.375" (9.5mm) lead length,·引线可承受5 磅 (2.3kg) 拉力。
5 lbs. (2.3kg) tension机械数据 Mechanical Data·端子: 镀锡轴向引线 Terminals: Plated axial leads·极性: 色环端为负极 Polarity: Color band denotes cathode end ·安装位置: 任意 Mounting Position: Any特征 FeaturesSS32 3.01000.57520140.550.8560V V ℃AV A mA ℃//W pF 单位UnitV V R(RMS)最大正向平均整流电流最大峰值反向电压最大反向有效值电压-50 --- +150V RRM I FM 最大正向电压降 @IF =3.0AV F 正向峰值浪涌电流 8.3mS单一正弦半波I FSM 最大反向漏电流IR 典型热阻工作温度和存储温度R θJA Tj, T STG典型结电容 VR = 4.0V f = 1.0MHzCj @TA = 25℃Maximum repetitive peak reverse voltageMaximum RMS voltage最大直流阻断电压Maximum DC blocking voltageMaximum average forward rectified currentMaximum forward voltagePeak forward surge current 8.3 ms single half sine-waveMaximum reverse currentTypical thermal resistanceOperating junction and storage temperature rangeType junction capacitance符号SymbolsV DC 20SS33SS34SS35SS36SS38SS310302130402840503550604260805680100701000.7正向电流 I F (A )正向特性曲线（典型值）正向电压 V F (V)环境温度 Ta(°C )通过电流的周期峰值正向浪涌电流 I F S M (A )平均正向电流 I F (A V ) (A )浪涌特性曲线（最大值）TYPICAL FORWARD CHARACTERISTICFORWARD CURRENT DERATING CURVEI F I n s t a n t a n e o u s F o r w a r d C u r r e n t (A )V F Instantaneous Forward Voltage (V)Tamb, ambient temperature (°C)I F (A ) A v e r a g e F o r w a r d R e c t i f i e d C u r r e n t (A )MAXIMUM NON REPETITIVE PEAK FORWARD SURGE CURRENTNumber of Cycles at 60 Hz.I F S M P e a k F o r w a r d S u r g e C u r r e n t (A )正向电流降额曲线0.010.1110500.6 1.2 1.602550751001251501753.02.52.01.51.00.501246102040100806040200100峰值反向电压百分比(%)TYPICAL REVERSE CHARACTERISTICSPercent Of Peak Reverse Voltage,%I R I n s t a n t a n e o u s R e v e r s e C u r r e n t (µA )反向特性曲线(典型值)反向电流 I R (μA )0.0010.010.11080140T J =125°CT J =25°C2040601001201.00.20.8 1.40.4SS32 ...... SS310特性曲线 Characteristic CurvesT J =75°C120SS32-SS34SS35-SS36SS38-SS310。
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 10 5 AVE:7.30kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ
ESD DISPERSION MAP
Rev.O 3/4
MBRM140T1G
PACKAGE DIMENSIONS SOD–123
A
C H
K
ÂÂÂ ÂÂÂ
1 2
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E H J K INCHES MIN MAX 0.055 0.071 0.100 0.112 0.037 0.053 0.020 0.028 0.004 ––– 0.000 0.004 ––– 0.006 0.140 0.152 MILLIMETERS MIN MAX 1.40 1.80 2.55 2.85 0.95 1.35 0.50 0.70 0.25 ––– 0.00 0.10 ––– 0.15 3.55 3.85
1000 100 10 1 0.1 0.01 0 5
Ta=75℃ Ta=25℃ Ta=-25℃
100
10
1 0 100 200 300 400 500 600 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS
1
10 15 20 25 30 35 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS
Symbol VRM VR Io IFSM Tj Tstg
Limits 40 40 1 5.5 150 -40 to +150
Unit V V A A ℃ ℃
(*1)Mounted on epoxy board. 180°Half sine wave
Electrical characteristics (Ta=25°C) Parameter Symbol
Forward voltage Reverse current
VF IR
Min. -
Typ. 0.54 4.0
Max. 0.56 30
UniБайду номын сангаас V µA
Conditions IF=1.0A VR=40V
Rev.O 1/4
MBRM140T1G
Electrical characteristic curves (Ta=25°C)
100 80 60 40 Ifsm 20 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 8.3ms 8.3ms 1cyc
150
100
50
AVE:83.0A
0
200
PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm
Construction Features
MBRM140T1G
•
Silicon epitaxial planar
SOD–123
Mechanical Characteristics
• • • • • •
Device Marking: S7 Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
1 Cathode
2 Anode
ORDERING INFORMATION
Device MBRM140T1G Package SOD−123 Shipping 3000/Tape & Reel
Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak (60Hz・1cyc) Junction temperature Storage temperature
1000 Ta=75℃ FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) Ta=125℃ 100 Ta=150℃ Ta=25℃ 10 Ta=-25℃
10000
Ta=150℃
1000 Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz
mm inches
SOD–123
Rev.O 4/4
25 20 15 10 5 0
IR DISPERSION MAP AVE:4.08uA
Ct DISPERSION MAP
200
PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc 8.3ms RESERVE RECOVERY TIME:trr(ns)
30 25 20 15 10 5 0 IFSM DISRESION MAP trr DISPERSION MAP AVE:10.4ns PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs
150
t
100
1ms
time
300us
Rth(j-c) 10
100
50
1
0 0.1 1 10 100
TIME:t(ms) IFSM-t CHARACTERISTICS
0.1
0.001 0.01
TIME:t(s) Rth-t CHARACTERISTICS
0.1
1
10
100
1000
0
0.5 1 1.5 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS
40
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
480 FORWARD VOLTAGE:VF(mV) 470 460 450 AVE:454.3mV 440 430 VF DISPERSION MAP Ta=25℃ VF=1A n=30pcs
3
3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 0V DC D=1/2 Io t T VR D=t/T VR=20V Tj=150℃ 2.5 2 1.5 D=1/2 1 0.5 0
0 25 50 75 100 125 150
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
2
Rev.O 2/4
MBRM140T1G
0.05 0.04 REVERSE POWER DISSIPATION:PR (W) 0.03 DC 0.02 0.01 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 40 D=1/2 Sin(θ＝180)
B
E J
STYLE 1: PIN 1. CATHODE 2. ANODE
D
RECOMMENDED FOOTPRINT FOR SOD–123
ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ
2.36 0.093 4.19 0.165
ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ
0.91 0.036
1.22 0.048
2.5
0A 0V DC
Io t T VR D=t/T VR=20V Tj=150℃
2
1.5
1
0.5
Sin(θ＝180)
Sin(θ＝180) 0 25 50 75 100 125 150
0
AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta)
CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc)
Surface Mount Schottky Power Rectifier
Plastic SOD–123 Package
• Small power mold type. • Low I R. • High reliability. • We declare that the material of product compliance with RoHS requirements.
1000
Mounted on epoxy board
1
IM=10mA IF=0.5A
TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W)
Rth(j-a)
0.9 0.8 FORWARD POWER DISSIPATION:Pf(W) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Sin(θ＝180) DC D=1/2
30
REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF)