泰科V23990-P540全系列

flow PIM 01200V / 15AƔ Tyco clip-in housingƔ Trench Fieldstop IGBT's for low saturation losses Ɣ Optional w/o BRCƔ Industrial DrivesƔ Embedded GenerationƔ V23990-P540-A-PM Ɣ V23990-P540-C-PMParameterSymbolValueUnitInput Rectifier BridgeRepetitive peak reverse voltage V RRM 1600V Th =80°C 30T c =80°C 40T j =25°C 200T j =25°C 200Th =80°C 37T c =80°C54Maximum junction temperatureT j max150°CTransistor InverterV CE 1200V T h =80°C 16T c =80°C20Repetitive peak collector current I cpuls tp limited by T j max 32A T h =80°C 39T c =80°C 58,6Gate-emitter peak voltageV GE ±20V Tj 150°C VCC=900V VGE=15V Maximum junction temperature T j max150°C* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuits10TypesConditionDC currentI FSMI FAV T j =T j maxFeaturesflow 0 housingTarget ApplicationsSchematicW I 2t-valuePower dissipation per Diode Collector-emitter break down voltage I C T j =T j max T j =T j maxt p =10msP tot I 2t A A A2s W Maximum RatingsForward current per diode Surge forward current P s t SC DC collector currentPower dissipation per IGBT SC withstand time*P tot AParameterSymbolValueUnitConditionMaximum RatingsDiode InverterT h =80°C 16T c =80°C20Repetitive peak forward current I FRM tp limited by T j max 31A T h =80°C 27T c =80°C 40,3Maximum junction temperatureT j max150°CTransistor BRCCollector-emitter break down voltage V CE 1200V T h=80°C 11T c =80°C 14Repetitive peak collector current I cpuls tp limited by T j max T h =80°C 22A T h =80°C 27T c =80°C41Gate-emitter peak voltageV GE ±20VTj 150°C VCE=900V VGE=15V Maximum junction temperature T j max 150°C* It is recommended to not exceed 1000 short circuit situations in the lifetime of the module and to allow at least 1s between short circuitsDiode BRCT h =80°C 12T c =80°C 16Repetitive peak forward current I FRM tp limited by T j max T h =80°C 24A T h =80°C 23T c =80°C35Maximum junction temperatureT j max150°CThermal propertiesStorage temperature T stg -40…+125°C Operation temperatureT op-40…+125°CInsulation propertiesInsulation voltage V ist=1min4000Vdc Creepage distance min 12,7mm min 12,7mmT j =T j max I F DC forward currentClearanceP tot T j =T j maxT j =T j max DC forward currentI F Power dissipation per Diode SC withstand time*t SCW W A A 10P sPower dissipation per IGBT DC collector currentI C T j =T j max T j =T j maxP tot W A T j =T j maxPower dissipation per Diode P totParameterSymbolUnitV GE (V) or V GS (V)V r (V) or V CE (V) or V DS (V)I C (A) or I F (A) or I D (A)T(C°)MinTypMaxInput Rectifier BridgeTj=25°C 1,221,45Tj=125°C 1,21Tj=25°C 0,91Tj=125°C 0,81Tj=25°C 0,01Tj=125°C 0,013Tj=25°C 0,01Tj=150°C4Thermal resistance chip to heatsink per chip R thJH 1,95K/W Thermal resistance chip to case per chipR thJC1,287K/WTransistor InverterTj=25°C 55,86,5Tj=125°C 15Tj=25°C 1,892,35Tj=125°C 2,19Tj=25°C 0,1Tj=125°C 2Tj=25°C 200Tj=125°CIntegrated Gate resistor R gint -Ohm Tj=25°C Tj=125°C 32Tj=25°C Tj=125°C 20Tj=25°C Tj=125°C 451Tj=25°C Tj=125°C 276Tj=25°C Tj=125°C 1,61Tj=25°C Tj=125°C 2,19Tj=25°C 1,1Tj=125°C Tj=25°C 0,058Tj=125°C Tj=25°C 0,048Tj=125°C 96015Tj=25°C 85Tj=125°CThermal resistance chip to heatsink per chip R thJH1,67K/W Thermal resistance chip to case per chipR thJC K/WDiode InverterTj=25°C 2,323Tj=125°C 1,78Tj=25°C Tj=125°C 31Tj=25°C Tj=125°C 355Tj=25°C Tj=125°C 3,5Tj=25°C Tj=125°C1,32Thermal resistance chip to heatsink per chip R thJH 2,64K/W Thermal resistance chip to case per chipR thJC1,7424K/WThermal greasethickness 50um Ȝ = 0,61 W/mKThermal grease thickness 50um Ȝ= 0,61 W/mKV A ns OhmmA 1500Reverse recovery energyV F I RM mWs P C Thermal grease thickness 50um Ȝ = 0,61 W/mKReverse leakage currentForward voltageThreshold voltage (for power loss calc. only)Slope resistance (for power loss calc. only)V F V to r t ValueConditionsV V Reverse recovery charge C rss Q Gate Turn-on energy loss per pulse Turn-off energy loss per pulse Q rr Diode forward voltage Peak reverse recovery current Reverse recovery time t rr Rgoff=20Ohmt d(on)000nF nF f=1MHzErec nC 2525251515V mA nA ns ns ns ns mWs nF V GE(th)V CE(sat)I CES VCE=VGE03030301200Gate emitter threshold voltage Collector-emitter saturation voltage Collector-emitter cut-off Gate-emitter leakage current I GES C ies C oss t r E off t d(off)E on 0I r 20t f Gate chargeTurn-on delay time Rise timeTurn-off delay time V mWs 150,0006Reverse transfer capacitance Rgon=40Ohm Input capacitance Output capacitanceFall timeParameterSymbolUnitV GE (V) or V GS (V)V r (V) or V CE (V) or V DS (V)I C (A) or I F (A) or I D (A)T(C°)MinTypMaxValueConditionsTransistor BRCTj=25°C 55,86,5Tj=125°C Tj=25°C 1,872,7Tj=125°C 2,19Tj=25°C 0,05Tj=125°C 2Tj=25°C 200Tj=125°CTj=25°C Tj=125°C 34Tj=25°C Tj=125°C 20Tj=25°C Tj=125°C 442Tj=25°C Tj=125°C 284Tj=25°C Tj=125°C 0,917Tj=25°C Tj=125°C 1,47#BEZUG!Tj=25°C #BEZUG!Tj=125°C #BEZUG!Tj=25°C 0,037Tj=125°C Tj=25°C 0,029Tj=125°C f=1MHzTj=25°C 53Tj=125°CThermal resistance chip to heatsink per chip R thJH 2,56K/W Thermal resistance chip to case per chipR thJC1,6896K/WDiode BRCTj=25°C 1,82,5Tj=125°C 1,79Tj=25°C 250Tj=125°C 700Tj=25°C Tj=125°C 423Tj=25°C Tj=125°C 2,1Tj=25°C Tj=125°C0,88Thermal resistance chip to heatsink per chip R thJH 3,05K/W Thermal resistance chip to case per chipR thJC2,013K/WNTC ThermistorRated resistance R 25Tj=25°C 17,52229kOhm Deviation of R100D R/R R100=1503ȍTc=100°C 2,9%/K Power dissipation given Epcos-Type P Tj=25°C 210mW B-valueB (25/100)Tol. ±3%Tj=25°C4000KRgon=80Ohm 15600Rgon=80Ohm 15600Thermal grease thickness 50um Ȝ = 0,61 W/mKRgon=80Ohm 15600Thermal grease thickness 50um Ȝ = 0,61 W/mK15Rgoff=40Ohm 0,0003#BEZUG!Rgon=80OhmP Ws P C V P A ns Gate emitter threshold voltage VCE=VGECollector-emitter saturation voltage V GE(th)V CE(sat)15Collector-emitter cut-off Gate-emitter leakage current Turn-on delay time Integrated Gate resistor Turn-off energy loss per pulse Input capacitance Output capacitanceRise timeTurn-off delay time Fall timeTurn-on energy loss per pulse I CES I GES C ies E on E off R gint t d(on)t r t d(off)t f Reverse transfer capacitance Gate chargeC oss C rss Q Gate #BEZUG!1200060002010ns ns 10Ohm V V mA nA nF nF nF ns ns P Ws P Ws nC Diode forward voltage Reverse leakage current 10251200Reverse recovered charge Reverse recovery energyV F I r t rr Q rr E rec Reverse recovery timePackage Outline and PinoutOutlinePinoutPRODUCT STATUS DEFINITIONS Formative or In DesignFirst ProductionFull ProductionDISCLAIMERLIFE SUPPORT POLICYAs used herein:Preliminary This datasheet contains preliminary data, andsupplementary data may be published at a later date. Tyco Electronics reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for teFinal This datasheet contains final specifications. TycoElectronics reserves the right to make changes at any time without notice in order to improve design. The data contained is exclusively intended for technically trained staff.Target Product StatusDatasheet StatusDefinitionThis datasheet contains the design specifications for product development. Specifications may change in any manner without notice. The data contained is exclusively intended for technically trained staff. Tyco Electronics reserves the right to make changes without further notice to any products herein to improve reliability, function or design. Tyco Electronics does not assume any liability arising out of the application or use of any product or circuit deTyco Electronics products are not authorised for use as critical components in life support devices or systems without the express written approval of Tyco Electronics.1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in la2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.V23990-P540-A-PMfinal datasheetOutput inverterFigure 1.Typical output characteristicsFigure 2.Typical output characteristicsOutput inverter IGBTOutput inverter IGBTIc= f(V CE )parameter: tp = 250 ms Tj = 25 °Cparameter: tp = 250 ms Tj = 125 °CV GE parameter:from:7V to 17VV GE parameter:from:7V to 17Vin 1V steps in 1V stepsFigure 3.Typical transfer characteristicsFigure 4.Typical diode forward current asOutput inverter IGBTa function of forward voltageF F parameter: tp = 250 ms V CE = 10Vparameter: tp = 250 msFigure 5.Typical switching energy losses Figure 6.Typical switching energy losses as a function of collector current as a function of gate resistor Output inverter IGBTOutput inverter IGBTinductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =40W Ic =15AFigure 7.Typical switching times as aFigure 8.Typical switching times as a function of collector current function of gate resistor Output inverter IGBTOutput inverter IGBTt = f (Ic)t = f (R G )inductive load, Tj = 125 °Cinductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V RG on = 2*R Goff =40W Ic =15AFigure 9.Typical reverse recovery time as a Figure 10.Typical reverse recovery current as afunction of IGBT turn on gate resistor function of IGBT turn on gate resistor Output inverter FRED diodeOutput inverter FRED diodet rr = f (Rgon)I RRM = f (Rgon)Tj =125°C Tj =125°C V R =600V V R =600V I F =15A I F =15AFigure 11.Typical reverse recovery charge as aFigure 12.Typical rate of fall of forwardfunction of IGBT turn on gate resistor and reverse recovery current as a Output inverter FRED diodefunction of IGBT turn on gate resistor Q rr = f (Rgon)Output inverter FRED diode dI0/dt,dIrec/dt = f (Rgon)Tj =125°C Tj =125°C V R =600V V R =600V I F =15A I F =15AV23990-P540-A-PMfinal datasheetOutput inverterFigure 13.IGBT transient thermal impedanceFigure 14.FRED transient thermal impedanceas a function of pulse widthas a function of pulse widthZ th JH = f(tp)Z th JH = f(tp)Parameter: D = tp / T RthJH=2,64K/WIGBT thermal model values FRED thermal model values R (C/W)Tau (s)R (C/W)Tau (s)0,035,5E+010,045,2E+010,092,7E+000,161,8E+000,324,6E-010,742,4E-010,821,4E-011,176,3E-020,342,8E-020,415,8E-030,125,5E-030,147,8E-040,106,2E-04V23990-P540-A-PMfinal datasheetOutput inverterFigure 15.Power dissipation as aFigure 16.Collector current as afunction of heatsink temperature function of heatsink temperature Output inverter IGBTOutput inverter IGBTP tot = f (Th)I c = f (Th)V GE =15VFigure 17.Power dissipation as aFigure 18.Forward current as afunction of heatsink temperaturefunction of heatsink temperature Output inverter FREDOutput inverter FREDP tot = f (Th)I F = f (Th)parameter: Tj = 150°C parameter: Tj = 150°CV23990-P540-A-PMfinal datasheetBrakeFigure 19.Typical output characteristicsFigure 20.Typical output characteristicsBrake IGBTBrake IGBTIc= f(V CE )Ic= f(V CE )parameter: tp = 250 ms Tj = 25 °Cparameter: tp = 250 msTj = 125 °CV GE parameter:from:7V to 17VV GE parameter:from:7V to 17Vin 1V stepsin 1V stepsFigure 21.Typical transfer characteristicsFigure 22.Typical diode forward current asBrake IGBTa function of forward voltageIc= f(V GE )Brake FREDI F =f(V F )parameter: tp = 250 ms V CE = 10 Vparameter: tp = 250 msV23990-P540-A-PMfinal datasheetBrakeFigure 23.Typical switching energy lossesFigure 24.Typical switching energy lossesas a function of collector current as a function of gate resistor Brake IGBTBrake IGBTE = f (Ic)E = f (R G )inductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =80W Ic =10AFigure 25.Typical switching times as aFigure 26.Typical switching times as afunction of collector currentfunction of gate resistor Brake IGBTBrake IGBTt = f (Ic)t = f (R G)inductive load, Tj = 125 °Cinductive load, Tj = 125 °CV CE =600V V CE =600V V GE =15VV GE =15V R G on = 2*R Goff =80W Ic =10AFigure 27.IGBT transient thermal impedanceFigure 28.FRED transient thermal impedanceas a function of pulse widthas a function of pulse widthZ th JH = f(tp)Z th JH = f(tp)Parameter: D = tp / T RthJH=3,05K/WFigure 29.Power dissipation as aFigure 30.Collector current as afunction of heatsink temperature function of heatsink temperature Brake IGBTBrake IGBTP tot = f (Th)I c = f (Th)parameter: Tj = 150°Cparameter: Tj = 150°CV GE =15VFigure 32.Forward current as afunction of heatsink temperature Brake FREDI F = f (Th)parameter: Tj = 150°C parameter: Tj = 150°CV23990-P540-A-PMfinal datasheetInput rectifier bridgeFigure 33.Typical diode forward current asFigure 34.Diode transient thermal impedancea function of forward voltageas a function of pulse widthRectifier diodeI F =f(V F )Z th JH = f(tp)parameter: tp = 250 ms Parameter: D = tp / T RthJH=1,95K/WFigure 35.Power dissipation as aFigure 36.Forward current as afunction of heatsink temperature function of heatsink temperature Rectifier diodeRectifier diodeP tot = f (Th)I F = f (Th)parameter: Tj = 150°C parameter: Tj = 150°CV23990-P540-A-PMfinal datasheetThermistorFigure 37.Typical NTC characteristicas afunction of temperatureR T= f (T)General conditions:3 phase SPWM,Vgeon=15V Vgeoff=0V Rgon=40ohms Rgoff=20ohms Figure 1.Typical avarage static loss Figure 2.Typical avarage static loss as a function of output current as a function of output currentModulation index * cosfi Modulation index * cosfiparameter Mi*cosfi from-1,00to1,00parameter Mi*cosfi from-1,00to1,00in0,20steps in0,20stepsFigure 3.Typical avarage switching loss Figure 4.Typical avarage switching loss as a function of output current as a function of output currentFRED Ploss=f(Iout)DC link=600V DC link=600VSwitching freq.fsw from2kHz to16kHz Switching freq.fsw from2kHz to16kHz parameter in* 2steps parameter in* 2stepsGeneral conditions:3 phase SPWM,Vgeon=15V Vgeoff=0V Rgon=40ohms Rgoff=20ohms Figure 5.Typical available 50Hz output current Figure 6.Typical available 50Hz output current as a function of Mi*cosfi as a function of switching frequencyPhase Iout=f(Mi*cosfi)Phase Iout=f(fsw)DC link=600V DC link=600Vfsw=4kHz Mi*cosfi=0,8Heatsink temp.Th from60°C to100°C Heatsink temp.Th from60°C to100°C parameter in5°C steps parameter in5°C stepsFigure 7.Typical available 50Hz output current Figure 8.Typical available 0Hz output current as a function of Mi*cosfi and fsw as a function of switching frequencyPhase Iout=f(fsw,Mi*cosfi)Phase Ioutpeak=f(fsw)DC link=600V DC link=600VTh=80°C Heatsink temp.Th from60°C to100°Cparameter in5°C stepsGeneral conditions:3 phase SPWM,Vgeon=15VVgeoff=0VRgon=40ohmsRgoff=20ohmsFigure 9.Typical available electric Figure 10.Typical efficiencypeak output power as aas a function of output powerThfunction of heatsink temperatureInverterPout=f(Th)Inverterefficiency=f(Pout)Conditions:Tj=125C Conditions:Tj=125C DC link=600VDC link=600VModulation index Mi=1Modulation index Mi=1cosfi=0,80cosfi=0,80Switching freq.fsw from 2kHz to 16kHzSwitching freq.fsw from 2kHz to 16kHzparameter in* 2stepsparameter in* 2stepsmConditions:Tj=125C DC link=600V Modulation index Mi=1cosfi=0,8Switching freq.fsw from 1kHz to 16kHzparameter in* 2steps Heatsink temperature=80°C Motor efficiency=0,85。