AO9T芯片,A09T三极管MOS规格书
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PW3400A
GENERAL DESCRIPTION
The PW3400A uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application..
FEATURES
VDS = 30V ID =5.8A
RDS(ON) < 28mΩ @ VGS=10V
Available in a 3-Pin SOT23-3 Package
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol Rating
Unit
Drain-Source Voltage V DS
30
V Gate-Source Voltage V GS
±12 V
Continuous Drain Current ID @TA=25℃ 5.8 A Continuous Drain Current ID @TA=70℃
4.9 A Pulsed Drain Current 2
I DM
20 A Total Power Dissipation
3 P D @TA=25℃ 1
W Storage Temperature Range T STG
-55 To 150 ℃ Operating Junction Temperature Range T J -55 To 150 ℃ Thermal Resistance Junction-ambient 1 R θJA 125 ℃/W Thermal Resistance Junction-Ambient 1 (t ≤10s)
R θJC
80
G
S
SOT-23-3L (TOP VIEW)
D
G
S
深圳夸克微科技
Fig.5 Normalized VGS (th) vs. TJ Fig.6 Normalized R DSON vs. TJ
-50
0 50 100 150 -50 0 50 100
150
T J ,Junction Temperature (℃ )
T J
, Junction Temperature (℃)
Notes
1. All dimensions are in millimeters.
2. Tolerance ±0.10mm (4 mil) unless otherwise specified
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.