bond angle effect on energy barrier height
PZT的半导体特性

Band structures and band offsets of high K dielectrics on SiJ.Robertson *Engineering Department,Cambridge University,Trumpington Street,Cambridge CB21PZ,UKAbstractVarious high dielectric constant oxides will be used as insulator in ferroelectric memories,dynamic random access memories,and as the gate dielectric material in future complementary metal oxide semiconductor (CMOS)technology.These oxides which have moderately wide bandgaps provide a good test of our understanding of Schottky barrier heights and band offsets at semiconductor interfaces.Metal induced gap states (MIGS)are found to give a good description of these interfaces.The electronic structure and band offsets of these oxides are calculated.It is found that Ta 2O 5and SrTiO 3have small or vanishing conduction band offsets on 2O 3,Y 2O 3,ZrO 2,HfO 2,Al 2O 3and silicates like ZrSiO 4have offsets over 1.4eV for both electrons and holes,making them better gate dielectrics.#2002Elsevier Science B.V .All rights reserved.Keywords:Band structures;Band offsets;Dielectric constant oxides1.IntroductionThe closed shell transition metal (TM)oxides like SrTiO 3have been extensively studied for their ferro-electric properties,phase transitions and soft modes [1].They are now of great technological importance for electronic devices such as dynamic random access memories (DRAMs),ferroelectric non-volatile mem-ories (FeRAMs),and as alternative gate oxides in future complementary metal oxide semiconductor (CMOS)transistors [2±4].This requires them to be considered in terms of their electronic properties,by treating them as wide bandgap semiconductors [5].This paper reviews the band structures of these oxides,and then considers important electronic prop-erties such as their band offsets and Schottky barrier heights (SBHs).It turns out that the oxides have intermediate bandgaps and so they provide a goodtest of our present models of Schottky barriers and band offsets.2.Band structuresThe simplest band structures are those of the cubic ABO 3perovskites such as SrTiO 3or BaTiO 3.The bandgap is direct at G (Fig.1)[6].The valence band consists mainly of the 2p states of the O 2Àions,and the conduction band of the Ti 4 3d (t 2g )states [7].The Sr s and p states lie higher in the conduction band.However,the bonding is 60±70%ionic,and so there is signi®cant mixing of Ti d states in the valence band.The bands of the Pb perovskites differ in that Pb is divalent and it retains its 6s electrons [8].The ®lled Pb s states form an additional valence band at about À7eV as in PbTiO 3(Fig.2)[6,9].There is also some Pb s admixture in the upper valence band.The empty Pb 6p states now lie near the lowest conduction band.When Zr replaces Ti in SrTiO 3(or BaTiO 3),the bandgap increases strongly by 2eV,because itisApplied Surface Science 190(2002)2±10*Tel.: 44-1223-33-2689;fax: 44-1223-33-2662.E-mail address:jr@ (J.Robertson).0169-4332/02/$±see front matter #2002Elsevier Science B.V .All rights reserved.PII:S 0169-4332(01)00832-7controlled by the energy of the Zr d states.In contrast,in PZT,the Pb 6p states form the conduction band minimum,so the gap barely increases from 3.3to 3.7eV [10].It is recognised that the resonant covalence of Ti-d/O-p states is the origin of ferroelectricity in SrTiO 3type perovskites [11].In Pb perovskites,there is additional resonant covalence between Pb s and O p states which increases the ferroelectric polarity.SrBi 2Ta 2O 9is a layered crystal built from perovs-kite blocks separated by Bi 2O 2layers.It turns out that the Bi s and p states form the highest valence band and lowest conduction bands,respectively,while the ferro-electric response originates mainly from the TaO 3perovskite blocks [12].There is therefore an interest-ing separation of the functionality onto the Ta and Bi sub-lattices.Cubic ZrO 2has the ¯uorite structure.It has a simple band structure,as shown in Fig.3.The O p states form the valence band with a maximum at X [13].The conduction band minimum is at G ,and consists of Zr d states.The Zr d x 2Ày 2and d z 2states lie below the d xy states.The Zr s state lies midway between these at G ,but it disperses rapidly upwards.2.1.Models of Schottky barriers and semiconductor heterojunctionsThe band line-up of two semiconductors is deter-mined,like the SBH of a semiconductor on a metal,by charge transfer across the interface and the presence of any dipole layer at the interface.The charge transfer is that between the metal and the interface states of the semiconductor (Fig.4)[14].The charge transfertendsFig.1.Band structure of BaTiO 3calculated by pseudo-potential method [6].J.Robertson /Applied Surface Science 190(2002)2±103to align the Fermi level E F of the metal to the energy level of the interface states.The SBH for electrons f n between a semiconductor S and a metal M is f n S F M ÀF S F S Àw S(1)Here,F M is the work function of the metal,F S the energy of the semiconductor interface states,w S the semiconductor's electron af®nity (EA)and S the Schottky pinning parameter.S is given by [15]S11 e 2N d =ee 0(2)where e is the electronic charge,e 0the permittivity of free space,N the areal density of the interface states and d their decay length in the semiconductor.The dimensionless pinning factor S describes if the barrieris `pinned'or not.S varies between the limits S 1for unpinned Schottky barriers,and S 0for `Bardeen'barriers pinned by a high density of interface states in which the SBH is f n F S Àw S .There are numerous models of the origins of inter-face states,both intrinsic and extrinsic.In the intrinsic model originating from Bardeen and Heine,a semi-in®nite semiconductor in contact with a metal pos-sesses intrinsic states which are now called metal-induced gap states (MIGS)by Tersoff [14].F S is then the charge neutrality level (CNL)of the interface states,de®ned as the energy above which the states are empty for a neutral surface [16±18].On the other hand,the extrinsic models stress that the metal can react with the semiconductor [19].Brillson correlated the heat of reaction with S .This reaction maycreateFig.2.Band structure of PbTiO 3calculated by pseudo-potential method [6].4J.Robertson /Applied Surface Science 190(2002)2±10interface defects such as vacancies,whose gap states can pin the metal Fermi level,as noted by Spicer [20]and Dow [21].These models were supported by theobservation that pinning occurs even for monolayer coverage of metal,before the MIGS could be estab-lished.It is now believed that,overall,the intrinsic model gives a better description of Schottky barriers,because intrinsic states have a larger pinning dipole,N d ,than surface defects.The pinning parameter S has been in¯uential in our empirical understanding of Schottky barriers.Some years ago,Kurtin et al.[22]noted that S seemed to vary sharply with the ionicity of semi-conductor (Fig.5),from near 0for low ionicity semiconductors like Si and GaAs to 1for higher ionicity solids like SiO 2,SrTiO 3and KTaO 3.S is a dimensionless slope of barrier height to metal work function,S@f n @F M(3)Fig.3.Band structure of ZrO 2calculated by pseudo-potential method[6].Fig.4.Schematic diagram of SBHs.J.Robertson /Applied Surface Science 190(2002)2±105However,Louie [23]and Schluter [24]noted that Kurtin [22]had actually correlated the barrier heights to S H :S H@f n @X(4)which is the slope of barrier height to the Pauling electronegativity of the metal,and not the dimension-less S in (4).The work function and electronegativity vary roughly as [25,26]:F M 2:27X M 0:34(5)Thus,S H 2:27S ,and the Schottky limit should be S H 2:27.The data rarely reach this limit and Schluter [24]observed that S had a better correlation with the dielectric constant of the semiconductor e 0.Empiri-cally,Mo Ènch [14,27]found that S varied with e I as S11 0:1 e I À1 2(6)Certain materials are key tests of Schottky barriermodels.Diamond and xenon [14,28]have zero ioni-city but small e I ,and so their large S values show that S depends on e not on ionicity.This is tested by plotting log 1= S À1 against log e I À1 as in Fig.6.The wide gap oxides provide another key test,because they have intermediate e I values.SrTiO 3and KTaO 3were taken as high ionicity solids in the original Kurtin plot,with S H $1.However,this wasbefore data was actually known.When data [29]became available for SrTiO 3,showing S lying between 0.25and 0.4(Fig.6),it was clear that S is much lower.SrTiO 3falls well on the trend in Fig.3.The reason for this is that the SBHs depend on e I .e I is controlled by the states closest to the bandgap [5].In SrTiO 3,these are the moderately ionic Ti±O states of Ti±O bonds,not the highly ionic Sr±O states which lie well away from the gap and provide a much smaller contribution to e I .This can be seen in the partial density of states (DOS)of SrTiO 3in Fig.6.Thus,SrTiO 3and KTaO 3were misplaced in Fig.5as highly ionic solids.A lesser point is that the moderate value of S of SrTiO 3clearly correlates with e I ,and not with the low frequency dielectric constant e 0,which has a very large value for ferroelectrics and would give S %0from (6).SrTiO 3also serves as an evidence against the defect model,in that the barrier lies some way into the gap,not at the conduction band edge where the O vacancy states lie and would cause pinning.In sum-mary,the MIGS model of Schottky barriers holds for a wide range of solids of various ionicity and dielectric constants [5].The band alignment between two semiconductors is controlled by charge transfer and interface dipoles,just as Schottky barriers [30].For no dipoles,the Schottky limit,the conduction band offset isgivenFig.5.Schottky barrier pinning factor S H in the (incorrect)model of Kurtin etal.Fig. 6.Log±log plot of 1= S À1 vs.e I À1for various semiconductors and insulators to verify the MIGS model of Schottky barrier pinning factor S .6J.Robertson /Applied Surface Science 190(2002)2±10by the difference in their electron af®nities,the `elec-tron af®nity rule'.A similar idea was that for no charge transfer,the band line-ups are derived by placing each semiconductor's band on an absolute energy scale such as those of the free atom energy levels [31].Tersoff [16]showed that the band offset between two semiconductors a and b is controlled by interface dipoles as in the Schottky barrier,and so the conduc-tion band offset is given by f n w a ÀF CNL ;a À w b ÀF CNL ;bS F CNL ;a ÀF CNL ;b(7)The offsets are now described by aligning the CNLs of each semiconductor,modi®ed by the S factor.For simple semiconductors like Si,e I is large,and so S is small and the third term was negligible in the original formulation,but it is retained here for wide gap oxides.For strong pinning,the alignment is just given by the alignment of the two CNLs.The CNL energy below the vacuum level is a measure of the mean electronegativity of the semiconductor,in the same way that the work function of a metal is propor-tional to the metal's electronegativity.Thus,Eq.(7)says that the band alignment is the difference in electronegativity screened by the S factor.A wide ranging quantitative comparison found that the CNL models gives a good description of the band offsets [30].The CNL is the branch point of the semiconductor interface states.It is the integral of the Green's func-tion of the band structure,taken over the Brillouin zone [17],G E ZBZ N E H d H EE ÀE H0(8)Cardona and Christensen later provided a quicker method using a sum over special points of the Bril-louin zone [5,32].G E X i 1E ÀE i (9)2.2.Application to oxidesThe band alignments for the various wide gapoxides in contact with metal or silicon are found by calculating their CNLs and S parameters.The S factors are found from (6)using the experimental values of e Iand are shown in Table 1.The CNLs were found by calculating the oxide band structures by the tight-binding method [5,6,8,33].The tight-binding para-meters are found by ®tting to existing band structures [9,10,34],photoemission spectra and optical data [2,35±37].The CNLs for the various oxides are given in Table 1,together with the experimental values of their bandgaps and electron af®nities [2,38].SrTiO 3is an important oxide for future DRAM capacitor dielectrics.SrTiO 3is also the most studied system and the best test of our calculations.Fig.7compares the predicted SBHs of SrTiO 3on various metals with the experimental values [30,39±43].The experimental data are quite scattered but are quite consistent with S !1and our calculated value of 0.28.This shows that SrTiO 3is a key oxide in the tests of Schottky barrier models.The calculated barrier height for SrTiO 3on Pt is 0.9eV ,which is close to the 0.8eV found by photoemission by Copel et al.[43].However we cannot account for the much larger S value found by Shimizu et al.[42].BaTiO 3has similar band offsets to SrTiO 3.PbTi x Zr 1Àx O 3or PZT is an important ferroelectric for non-volatile memories,optical memories and other applications.The predicted barrier height for Pt onTable 1Calculated values for various oxides of their CNL and conduction band (CB)offset with Si aGap (eV)EA (eV)CNL (eV)e I S CB offset (eV)SiO 290.9 2.250.86 3.5b Si 3N 4 5.3 2.1 4.10.51 2.4b Ta 2O 5 4.4 3.3 3.3 4.840.40.3BaTiO 3 3.3 3.9 2.6 6.10.28À0.1BaZrO 3 5.3 2.6 3.740.530.8TiO 2 3.05 3.9 2.27.80.180.05ZrO 2 5.8 2.5 3.6 4.80.41 1.4HfO 26 2.5 3.740.53 1.5Al 2O 38.81c 5.5 3.40.63 2.8Y 2O 362c 2.4 4.40.46 2.3La 2O 36c 2c 2.440.53 2.3ZrSiO 46.5 2.4 3.6 3.80.56 1.5SrBi 2Ta 2O 94.13.53.35.30.4aExperimental values [36,37]of the bandgap,EA [2,38],dielectric constant e I [37]are also given.In Eqs.(2)and (5),F S is the energy of the CNL below the vacuum level,in this table,it is its energy above the valence band.bExperimental values.cEstimated values.J.Robertson /Applied Surface Science 190(2002)2±107PZT (Pb 0.55Zr 0.45O 3)is 1.45eV ,which is close to the 1.5eV measured by Dey et al.[44].The electron barrier of Pt on PZT is larger than that on BST because its CNL lies lower in the gap.This is because of the different band structure of PZT,in which the Pb 6s and 6p states form the band edges and this tends to lower the CNL.The larger value of the hole barrier than the electron barrier means that PZT thin ®lms can have predominantly electron injection,even though bulk PZT tends to be p-type.SrBi 2Ta 2O 9(SBT)is an important ferroelectric for non-volatile memories [2,45].It does not suffer from the loss of switchable polarisation (fatigue)when used with Pt electrodes,which is a problem for PZT.Note that more recent optical data ®nd that the bandgap of SBT is 4.1eV [2].The Schottky barrier of Pt is predicted to be 1.2eV ,which is essentially the same as that found by photoemission [46].There is an important need for high dielectric constant oxides to act as gate oxides instead of silicon dioxide [3,4].This is because the SiO 2layer is now so thin (2nm),that it no longer acts as a good insulator because of direct tunnelling across it.The solution is to replace SiO 2with a thicker layer of a medium k oxide,with the same equivalent capacitance or `equivalence oxide thickness't ox .The oxides must also satisfy certain other conditions,including chemi-cal stability in contact with Si [47].This rules out Ti and Ta which both react with Si to form SiO 2.The other key requirement is that they act as barriers toboth electrons and holes [5,32].This requires that both their valence and conduction band offsets be over 1eV .There is presently considerable effort to identify the most effective oxide,from a choice of ZrO 2,HfO 2,La 2O 3,Y 2O 3,Al 2O 3and the silicates ZrSiO 4and HfSiO 4.The calculated CB band offsets with Si are given in Table 1and summarised in Fig.8.They are compared in Table 2with recent experimental values [48±53],which is seen to be in good agreement.The important feature of Ta 2O 5and SrTiO 3is that both of them have CB offsets on Si under 1eV ,in fact 0in the case of SrTiO 3.This prediction was recently con®rmed by photoemission data of Chambers et al.[48].This means that SrTiO 3or BST cannot be a good gate oxide.The calculated CB offset for Ta 2O 5is only 0.36eV for Ta 2O 5on Si.This is consistent with recent photoemission data of Miyazaki and Hirose [49].Data for Ta 2O 5gate FETS also showed only a small elec-tron barrier [50].The CB offsets for BST and Ta 2O 5and BST are small or negligible because the bandgap is quite small and the band offsets are so asymmetric.To increasetheparison of calculated and observed SBHs of SrTiO 3on variousmetals.Fig.8.Predicted band offsets of various oxides on Si.Table 2Comparison of calculated and experimental values [48±53]of conduction band offsets on SiCalculatedExperiment References Ta 2O 50.350Miyazaki SrTiO 3À0.1<0.1Chambers ZrO 2 1.4 1.4Miyazaki 2.0Houssa Al 2O 32.82.8Ludeke8J.Robertson /Applied Surface Science 190(2002)2±10CB offset,we must either increase the bandgap or lower the CNL.The gap can be increased by raising the TM d levels,by using4d or5d metals instead of3d metals or using group IIIB metals instead of group IV. We should use zirconates,not titanates.The gap of BaZrO3is2eV wider than BaTiO3.Its offset is0.8eV.A better strategy is to lower the CNL.The CNL is lowered if the metal valence is lowered from4to3. Indeed,in Y2O3and La2O3,the CNL is much lower in the bandgap.Y2O3and La2O3are the oxides with largest CB offsets for reasonable dielectric constants. ZrO2has a bandgap of5.8eV,which is slightly wider than BaZrO3,and it also has a lower metal/ oxygen stoichiometry.This gives a larger CB offset for ZrO2(1.4eV)than BaZrO3,and indeed one which is just high enough.HfO2is similar.The calculated CB offset of1.4eV for ZrO2compares with an experi-mental value of1.4eV from photoemission[51]and a value of2eV by internal photoemission[52].This CB offset is large enough for devices.Zirconium silicate ZrSiO4and hafnium silicate HfSiO4are glassy oxides with bandgaps of $6.5eV.ZrSiO4consists of chains of alternate edge-sharing ZrO4and SiO2tetrahedra,with addi-tional Zr±O bonds between the chains,leading to an overall six-fold Zr coordination.We estimate the bandgap of ZrSiO4to be6.5eV.The calculated CB offsets are1.5eV,slightly more than ZrO2.Al2O3has a bandgap of8eV close to SiO2but with a higher k($9).Its calculated CB offset is2.8eV, which compares exactly with that measured by Ludeke et al.[53].Overall,the agreement between the calculated and subsequent experimental values for CB offsets in Table2is surprisingly good.References[1]M.E.Lines,X.Glass,Ferroelectrics,Oxford UniversityPress,Oxford,1990.[2]J.F.Scott,Ferroelectrics Rev.1(1998)1.[3]G.D.Wilk,R.M.Wallace,J.M.Anthony,J.Appl.Phys.89(2001)5243.[4]A.I.Kingon,J.P.Maria,S.K.Streiffer,Nature406(2000)1032.[5]J.Robertson,J.Vac.Sci.Technol.B18(2000)1785.[6]P.W.Peacock,J.Robertson,Unpublished work.[7]L.F.Mattheis,Phys.Rev.B6(1972)4718.[8]J.Robertson,W.L.Warren,B.A.Tuttle,D.Dimos,D.M.Smyth,Appl.Phys.Lett.63(1993)1519.[9]R.D.King-Smith,D.Vanderbilt,Phys.Rev.B49(1994)5828.[10]J.Robertson,W.L.Warren,B.A.Tuttle,J.Appl.Phys.77(1995)3975.[11]R.E.Cohen,Nature358(1992)136.[12]J.Robertson,C.W.Chen,W.L.Warren,C.D.Gutleben,Appl.Phys.Lett.69(1996)1704.[13]R.H.French,S.J.Glass,F.S.Ohuchi,Y.N.Xu,W.Y.Ching,Phys.Rev.B49(1994)5133.[14]W.MoÈnch,Phys.Rev.Lett.58(1987)1260.[15]W.MoÈnch,Surf.Sci.300(1994)928.[16]A.W.Cowley,S.M.Sze,J.Appl.Phys.36(1965)3212.[17]C.Tejedor,F.Flores,E.Louis,J.Phys.C10(1977)2163.[18]J.Tersoff,Phys.Rev.Lett.52(1984)465.[19]J.Tersoff,Phys.Rev.B30(1984)4874;J.Tersoff,Phys.Rev.B32(1985)6989.[20]L.J.Brillson,Surf.Sci.300(1994)909.[21]W.E.Spicer,T.Kendelewicz,N.Newman,K.K.Chin,I.Lindau,Surf.Sci.168(1986)240.[22]R.E.Allen,O.F.Sankey,J.D.Dow,Surf.Sci.168(1986)376.[23]S.Kurtin,T.C.McGill,C.A.Mead,Phys.Rev.Lett.30(1969)1433.[24]S.G.Louie,J.R.Chelikowsky,M.L.Cohen,Phys.Rev.B15(1977)2154.[25]M.Schluter,Phys.Rev.B17(1978)5044;M.Schluter,Thin Solid Films93(1982)3.[26]W.Gordy,W.J.O.Thomas,Phys.Rev.24(1956)439.[27]H.B.Michaelson,J.Appl.Phys.48(1977)4729.[28]W.MoÈnch,Phys.Rev.Lett.58(1986)1260.[29]W.MoÈnch,Europhys.Lett.27(1994)479.[30]R.C.Neville,C.A.Mead,J.Appl.Phys.43(1972)4657.[31]W.A.Harrison,J.Vac.Sci.Technol.14(1977)1016.[32]M.Cardona,N.E.Christensen,Phys.Rev.B35(1987)6182.[33]E.T.Yu,J.O.McCaldin,T.C.McGill,Solid State Phys.46(1992)1.[34]J.Robertson,C.W.Chen,Appl.Phys.Lett.74(1999)1168.[35]G.M.Rignanese,X.Gonze,A.Pasquarello,Phys.Rev.B63(2001)104305.[36]R.H.French,J.Am.Ceram.Soc.73(1990)477.[37]E.D.Palik,Handbook of Optical Properties of Solids,V ol.1±3,Academic Press,New York,1985.[38]W.Schmickler,J.W.Schultze,in:J.M.O'Bockris(Ed.),Modern Aspects of Electrochemistry,V ol.17,Plenum Press, London,1986.[39]G.W.Dietz,W.Antpohler,M.Klee,R.Waser,J.Appl.Phys.78(1995)6113.[40]H.Hasegawa,T.Nishino,J.Appl.Phys.69(1991)1501.[41]K.Abe,S.Komatsu,Jpn.J.Appl.Phys.31(1992)2985.[42]T.Shimizu,N.Gotoh,N.Shinozaki,H.Okushi,App.Surf.Sci.117(1997)400;()T.Shimizu,N.Gotoh,N.Shinozaki,H.Okushi,Mat.Res.Soc.Symp.Proc.(2000).[43]M.Copel,P.R.Duncombe,D.A.Neumayer,T.M.Shaw,R.M.Tromp,Appl.Phys.Lett.70(1997)3227.[44]S.K.Dey,J.J.Lee,P.Alluri,Jpn.J.Appl.Phys.34(1995)3134.[45]C.A.Paz de Araujo,J.D.Cuchiaro,L.D.McMillan,M.C.Scott,J.F.Scott,Nature374(1995)627.[46]C.D.Gutleben,Appl.Phys.Lett.71(1997)3444.[47]H.J.Hubbard,D.G.Schlom,J.Mater.Res.11(1996)2757.J.Robertson/Applied Surface Science190(2002)2±109[48]S.A.Chambers,Y.Liang,Z.Yu,R.Dropad,J.Ramdani,K.Eisenbeiser,Appl.Phys.Lett.77(2000)1662.[49]S.Miyazaki,Appl.Surface Science(2002)``these proceed-ings''.[50]S.Miyazaki,M.Narasaki,M.Ogasawara,M.Hirose,Microelec.Eng.59(2001)373.[51]A.Chatterjee,et al.,IEDM Tech Digest,1998,p.777.[52]M.Houssa,M.Tuominen,M.Nailli,V.Afansev, A.Stesmans,J.Appl.Phys.87(2000)8615.[53]R.Ludeke,M.T.Cuberes,E.Cartier,Appl.Phys.Lett.76(2000)2886;D.J.Maria,J.Appl.Phys.45(1974)5454.10J.Robertson/Applied Surface Science190(2002)2±10。
分子力学与分子动力学

Molecular Mechanics and Molecular Dynamics
甄云梅 20111210
内容
简介 力场
1.分子力场的势函数形式
2.分子力场分类 3.力场的参数化
能量最小化 热力学性质
分子力学----简介
分子力学----简介
分子力学,又叫力场方法(
ki ki Vn 2 2 V (r ) (li li , 0 ) ( i i , 0 ) (1 cos( n )) bonds 2 angles 2 torsions 2
N
(4 ij [(
i 1 j i 1
N
N
ij
rij
) (
分子力学----分子力场的势函数形式
范德华相互作用能
范德华相互作用能——Lennard-Jones势函数
r0 m m r0 n ELJ (r ) [( ) ( ) ] r n r
• r为原子对间的距离; ε 为势阱深度,ε 为势能参数,因原子的种类各异。 • 正的部分为排斥势,负的部分为吸引势 • n取6,m取12时,叫做LJ 6-12势函数, 用于AMBER, CVFF, CHARMm,
( R, r ) E ( R, r )
e 体系的哈密顿算符
(r与原子核(R)和电子(r)位置相关的波函数 ; R) E (r ; R)
分子力学----简介
基本假设
基于Born-Oppenheimer近似,其物理模型可描述为:原子核的 质量是电子质量的103~105倍,电子速度远远大于原子核的运动 速度,每当核的分布形式发生微小变更,电子立刻调整其运动 状态以适应新的核场。
ppt02章化学键与分子结构

NaCl
CsCl
上页 下页 目录 返回
xA-xB 离子性百分率(%) 离子键中键的极性 0.2 01 0.4 04 元素电负性的关系 0.6 09 0.8 15 1.0 22 1.2 30 1.4 39 1.6 47 1.8 55 2.0 63 2.2 70 2.4 76 也可用 Hannay & Smyth 公式 2.6 82 2.8 86 来计算键的离子性。 3.0 89 离子性=[16(△x)+3.5 (△x)2]×100% 3.2 92
上页 下页 目录 返回
2.2.2 离子的特征
离子化合 物的性质
取决于
离子键 的强度
取 决 于
正、负离 子的性质 1. 离子电荷 (charge) ▴ 正离子通常只由金属原子形成,其电荷等于中性原 子失去电子数目。出现在离子晶体中的负离子
还可以是多原子离子(NH4+) ▴ 负离子通常只由非金属原子组成,其电荷等于中性
与
上页 下页 目录 返回
(3 )晶格能 (lattice energy) ▴ 定义自由气态离子时聚集形成1mol 的固体离子化合 物所放出的能量,以符号U 表示。
+ -
q q M (g) + X (g) MX (S ) f k 2 R ▴ 作用 度量离子键的强度。晶格类型相同时,U与正、
负离子电荷数成正比,与离子间距离r0成反比。 化合物
+2,-2 +2,-2 +2,-2 +2,-2
210 240 257 256
上页 下页 目录 返回
晶格能可以通过各种 方法计算得到(本课程不 要求),最常用的有以下 几种方法:
● 波恩-哈勃循环 ● 玻恩-兰达公式 ● 水合能循环法
氢键

1、Direct Evidence for Methyl Group Coordination by Carbon-Oxygen Hydrogen Bonds in theLysine Methyltransferase SET7/9SET domain lysine methyltransferases (KMTs) are S-adenosylmethionine (AdoMet)-dependent enzymes that catalyze the site-specific methylation of lysyl residues in histone and nonhistone proteins. Based on crystallographic and cofactor binding studies, carbon-oxygen (CH center dot center dot center dot O) hydrogen bonds have been proposed to coordinate the methyl groups of AdoMet and methyllysine within the SET domain active site. However, the presence of these hydrogen bonds has only been inferred due to the uncertainty of hydrogen atom positions in x-ray crystal structures. To experimentally resolve the positions of the methyl hydrogen atoms, we used NMR (1)H chemical shift coupled with quantum mechanics calculations to examine the interactions of the AdoMet methyl group in the active site of the human KMT SET7/9. Our results indicated that at least two of the three hydrogens in the AdoMet methyl group engage in CH center dot center dot center dot O hydrogen bonding. These findings represent direct, quantitative evidence of CH center dot center dot center dot O hydrogen bond formation in the SET domain active site and suggest a role for these interactions in catalysis. Furthermore, thermodynamic analysis of AdoMet binding indicated that these interactions are important for cofactor binding across SET domain enzymes.2、The role of the methyl group in stabilising the weak N-H ... pi hydrogen bond in the4-fluorotoluene-ammonia complexThe 4-fluorotoluene-ammonia van der Waals complex has been studied using a combination of resonant two-photon ionisation (R2PI) spectroscopy, ab initio molecular orbital calculations and multidimensional Franck-Condon analysis. The R2PI spectrum shows two sets of features assignable to two distinct conformers: one in which the ammonia binds between the hydrogen meta to the methyl group and the fluorine atom in a planar configuration and the other a pi-bound structure involving one bond between an ammonia hydrogen and the pi-system and another between the ammonia lone pair and the slightly acidic hydrogens on the methyl group. Ground state estimated CCSD(T) interaction energies were computed at the basis-set limit: these calculations yielded very similar interaction energies for the two conformers, whilst zero point energy correction yielded a zero point binding energy for the pi-complex about 10% larger than that of the in-plane, sigma-complex. The results of multidimensional Franck-Condon simulations based on ab initio ground and excited state geometry optimisations and vibrational frequency calculations showed good agreement with experiment, with further improvements achieved using a fitting procedure. The observation of a pi-complex in addition to a pi-complex supports the intuitive expectation that electron-donating groups should help to increase pi-density and hence stabilise pi-proton acceptor complex formation. In this case, this occurs in spite of the presence ofa strongly electron-withdrawing fluorine atom.3、Hydrogen-Bonded Complexes of Phenylacetylene with Water, Methanol, Ammonia, andMethylamine. The Origin of Methyl Group-Induced Hydrogen Bond SwitchingThe infrared spectra in the acetylenic C-H stretching region for the complexes of phenylacetylene with water, methanol, ammonia, and methylamine are indicative of change in the intermolecular structure upon substitution with a methyl group. High-level ab initio calculations at CCSD(T)/aug-cc-pVDZ level indicate that the observed complexes of water and ammonia are energetically the most favored structures, and electrostatics play a dominant role in stabilizing these structures. The ability of the pi electron density of the benzene ring to offer a largercross-section for the interaction and the increased polarizability of the O-H and N-H groups in methanol and methylamine favor the formation of pi hydrogen-bonded complexes, in which dispersion is the dominant force. Further, the observed phenylacetylene-methylamine complex can be tentatively assigned to a kinetically trapped higher energy structure. The observed methyl group-induced hydrogen bond switching in the phenylacetylene complexes can be attributed to the switching of the dominant interaction from electrostatic to dispersion.4、Non-additivity of Methyl Group in the Single-electron Lithium Bond of H(3)C center dotcenter dot center dot Li-H ComplexThe non-additivity of the methyl groups in the single-electron lithium bond was investigated using ab initio calculations at the B3L YP/6-311++G** and UMP2/6-311++G** levels. The strength of the interaction in the H(3)C center dot center dot center dot LiH, H(3)CH(2)C center dot center dot center dot LiH, (H(3)C)(2)HC center dot center dot center dot LiH,and (H(3)C)(3)C center dot center dot center dot LiH complexes was analyzed in term of the geometries, energies, frequency shifts, stabilization energies, charges, and topological parameters. It is shown that (H(3)C)(3)C radical with LiH forms the strongest single-electron lithium bond, followed by (H(3)C)(2)HC radical, then H(3)CH(2)C radical, and H(3)C radical forms the weakest single-electron lithium bond. A positive non-additivity is present among methyl groups. Natural bond orbital and atoms in molecules analyses were used to estimate such conclusions. Furthermore, there are few linear/nonlinear relationships in the system and the interaction mode of single-electron Li-bond is different from the single-electron H-bond and single-electron halogen bond.5、Hydrogen-bonding ability of a methyl groupHydrogen bonds involving the methyl group have been studied by topological analysis of the electron density derived from quantum mechanical geometry-optimized structures of selected molecules/ions. The results indicate that hydrogen-bond formation not only depends on the distance from the methyl group to the proton acceptor, X, but also on the angle CH...X. The species investigated suggest the angle should be bigger than about 100degrees for hydrogen-bond formation.6、Intramolecular hydrogen bonds in ortho-substituted hydroxybenzenes and in 8-susbtituted 1-hydroxynaphthalenes: Can a methyl group be an acceptor of hydrogen bonds? Considering the findings of Fujii et al. showing that the cis isomer of the o-cresol radical cation shows a low-frequency shift of the OH stretching attributed to an intramolecular hydrogen bond with the CH3 group and considering the studies of Knak Jensen et al. concluding that such an O-(HC)-C-... interaction was not possible, the work presented in this article tries to understand if this is a consequence of the nature of the hydrogen bond acceptor (a CH3 group) or of the five-member ring that would be formed as a result of the intramolecular interaction. Thus, we have studied o-cresol, 8-methyl-1-hydroxynaphthalene, 1-hydroxy-1-propene, 1-hydroxy-3-methyl-1,3-butadiene, and their derivatives in which the -CH3 group has been substituted by a -F atom or by an -OH group. Taking into account interaction distances and angles, interaction energies (from isodesmic reactions), and electron density characteristics, we can conclude that, in general, a methyl group cannot behave as a hydrogen bond acceptor. In addition, we found that the formation of intramolecular hydrogen bonds driving to the formation of five-member rings is not favored even in the presence of a good acceptor. Moreover, different methods of evaluating intramolecular interaction energies have been analyzed.6、Hydrogen-bonding interaction of methyl-substituted pyridines with thioacetamide: sterichindrance of methyl groupThe hydrogen-bonding interaction between a series of methyl-substituted pyridines as proton acceptors and thioacetamide as a proton donor in CCl4 has been investigated using near-infrared absorption spectroscopy. The stability of the 1:1 hydrogen-bonded complex increases with the number of methyl groups and depends on the position of methyl groups. The steric hindrance of ortho-methyl groups particularly reduces the stability of complex. The relative stability agrees with the ease of miscibility of pyridines with water for methyl and dimethyl homologs. The calculated proton affinities and the DFT association energies using 6-31+G(d, p) and 6-311 ++G(2d, 2p) basis sets reveal the steric hindrance of ortho-methyl groups. (C) 2001 Elsevier Science B.V. All rights reserved.7、Hydrogen atoms in acetylsalicylic acid (Aspirin): the librating methyl group and probing thepotential well in the hydrogen-bonded dimerThe structure of acetylsalicylic acid (2-(acetoyloxy)benzoic acid; Aspirin) has been studied by variable temperature single crystal neutron diffraction. The usual large torsional librational motion of the terminal methyl group is observed and its temperature dependence analysed using a simple model for the potential. yielding the force constant and barrier height for this motion. In addition, asymmetry of the scattering density of the proton involved in the hydrogen bond forming the carboxylic acid dimer motif is observed at temperatures above 200 K. This asymmetry is discussed in terms of its possible implications for the shape of the hydrogen bonding potential well. (C) 2001 Elsevier Science B.V. All rights reserved. 8、。
常用物理词汇中英文对照

常用物理词汇中英文对照Aa.c. generator 交流发电机aberration 光行差,像差absolute index of refraction 绝对折射率absolute refractive index 绝对折射率absolute temperature scale 绝对温标absolute zero 绝对零度absorber 吸收体absorbing power 吸收能力,吸收本领absorptance 吸收比absorption 吸收absorption coefficient 吸收系数absorption line 吸收谱线absorption spectrum 吸收光谱,吸收谱accelerate 加速acceleration 加速度acceleration due to gravity 重力加速度acceleration-time graph 加速度—时间关系线图accelerator 加速器acceptor 接受体acceptor doping 受体掺杂acceptor impurity 受体杂质accommodation 调节,视觉调节accumulator 蓄电池accuracy 准确度acetate strip 醋酸酯条片achromatic 消色差的achromatic aberration 消色差achromatic condenser 消色差聚光透镜achromatic light 消色差光,白光acoustic blur 声响模糊acoustic board 吸音板,吸声板acoustic navigation 声响导航acoustic pressure 声压acoustics 声学act on 施于action 作用量,作用,作用力action of point 尖端作用activation 激活,活化activation energy 激活能,活化能active nucleus 活性核,放射性核activity 放射强度,放射性adapter 接合器adder 加法器adhesion 附着力,附着,黏附adhesive force 附着力adiabatic 绝热的adiabatic expansion 绝热膨胀adiabatic process 绝热过程aerial 天线??aerial induction 天线调谐电感aerial network 天线网络aerodynamic force 气动力,空气动力aerodynamics 气体动力学,空气动力学aerofoil 机翼agent 剂air blower 吹风器air column 空气柱,气柱air cushion 气垫air damping 空气阻尼air film 气膜air track 气垫导航air wedge 气楔alignment 对准,校整alpha decay α衰变alpha particle α粒子alpha particle scattering analogue α粒子放射模拟alternating current 交流电alternating voltage 交变电压,交流电压alternator 交流发电机altimeter 高度计,测高仪americium ?宝?ammeter 安培计amorphous 非结晶的,无定形的ampere 安培,安ampere-hour 安培小时,安时amplification 放大,放大率amplifier 放大器amplify 放大amplitude 振幅amplitude modulation 调幅,振幅调剂amyl acetate 醋酸戊酯anaemia 贫血analogue 模拟analogue experiment 模拟实验analogue signal 仿真讯号,非数字讯号analogue-to-digital conversion 模拟转换analyser 检偏振器AND gate 「与」门anemometer 风速计aneroid barometer 无液气压计,空盒气压计angle of contact 接触角angle of deviation 偏向角angle of diffraction 衍射角,绕射角angle of dip 倾角angle of elevation 仰角angle of emergence 出射角angle of incidence 入射角angle of inclination 倾角angle of minimum deviation 最小偏向角angle of projection 投射角angle of reflection 反射角angle of refraction 折射角angle of twist 扭转角angstrom 埃angular acceleration 角加速度angular aperture 孔径张角angular displacement 角位移angular frequency 角频率angular impulse 角冲量angular magnification 角度放大,角放大率angular momentum 角动量,动量矩angular motion 角向运动,角运动angular seed 角速率angular velocity 角速度angular width 角宽度annealing 退火,韧化anode 阳极,正极anomalous expansion 反常膨胀antenna 天线??anticlockwise moment 逆时针力矩antifreeze 防冻剂antinodal line 腹线??antinode 波腹antiparticle 反粒子antiphase 反相,逆相aperture 孔径,口径,孔apparent depth 视深apparent expansion 表观膨胀,视膨胀apparent frequency 表观频率,视频率apparent loss in weight 表观失重apparent weight 表观重量Appleton layer 阿普顿层,F电离层aqueous layer 水层Archimedes' principle 阿基米得原理area 面积argon 氩armature 电枢artificial disintegration 人工蜕变artificial radioactivity 人工放射astable 非稳态的astable circuit 非稳态电路astable multivibrator 非态多谐振荡器astigmatism 像散,散光astronomical telescope 天文望远镜at infinity 在无穷远处at rest 静止atmosphere 大气,大气层,大气压atmospheric pressure 大气压强atom 原子atomic bomb 原子弹atomic bond 原子键atomic density 原子密度atomic diameter 原子直径atomic energy 原子能atomic mass 原子质量atomic mass unit 原子质量单位atomic model 原子模型atomic nucleus 原子核atomic number 原子序数atomic radius 原子半径atomic separation 原子间距atomic spacing 原子间距atomic structure 原子结构atomic theory 原子论atomizer 喷雾器attenuation 衰减attraction 吸引attractive force 吸力audible frequency range 听频范围audible signal 可听讯号audio frequency 声频autofocus 自动聚焦,自动对焦avalanche 电子雪崩average acceleration 平均加速度average power 平均功率average speed 平均速率average velocity 平均速度Avogadro constant 阿佛加德罗常数,阿佛加德罗常量Avogadro number 阿佛加德罗数Avogadro's law 阿佛加德罗定律axial 轴向的,沿轴的axial field 轴向场axial search coil 轴向探察线图axis 轴axis of rotation 转轴Bback e.m.f. 反电动势background radiation 本底辐射Bainbridge mass spectrometer 班布里奇质谱仪balance 天平,秤,平衡balance arm 秤杆,平衡臂balance point 平衡点balance bridge 平衡电桥balanced force 平衡力ball bearing 球轴承,滚珠轴承ballistic galvanometer 冲击电流计,冲击检流计ballistic pendulum 冲击摆Balmer series 巴耳末系,巴耳末光谱band spectrum 带状光谱,带状谱bandwidth 带宽bar code 条形码bar magnet 磁棒bare wire 裸线??barium 钡barometer 气压计barrier 障碍物barrier layer 阻档层,耗尽层barrier potential difference 阻档层电势差,阻档层电位差Barton's pendulums 巴尔通摆base 基极base current 基极电流battery 电池组battery charger 电池充电器battery holder 电池座beaker 烧杯beam splitter 分束器,射束分离器beat 拍beat frequency 拍频becquerel 贝克勒耳,贝克bel 贝尔,贝bell jar 钟形罩bench mat 实验台垫Bernoulli's theorem 伯努利定律beryllium 铍beta decay β衰变beta particle β粒子biasing circuit 偏压电路biasing voltage 偏压biconcave lens 双凹透镜biconvex lens 双凸透镜bicycle dynamo 自行车发电机,脚踏车发电机bifilar pendulum 双线摆bifocal lens 双焦距透镜big bang model 大爆炸模型bimetallic strip 双层金属片,双金属片binary adder 二进加法器binary system 二进制binding 结合binding energy 结合能binoculars 双筒望远镜Biot-Savart law 毕奥—萨伐尔定律bipolar 双极的birefraction 双折射bistable 双稳态的,双稳器bistable circuit 双稳电路bistable multivibrator 双稳态多谐振荡器bit 二进制制,位black body radiation 黑体辐射block and tackle 滑轮组block diagram 方框图blocking capacitor 隔直流电器容blooming 敷霜,表面加膜Bohr atom 玻尔原子Bohr radius 玻尔半径Bohr theory 玻尔理论boil 沸腾,煮沸boiler 锅炉boiling point 沸点bolometer 辐射热计Boltzmann constant 玻耳兹曼常数,玻耳兹曼常量bombardment 轰击bond energy 键能bonding 键合Bourdon gauge 布尔登气压计bow wave 弓形波,舷波Boyle's law 博伊尔定律Brackett series 布喇开系,布喇开光谱Bragg angle 布喇格角Bragg diffraction 布喇格衍射,布喇格绕射Bragg plane 布喇格平面Bragg's law 布喇格定律brake 制动器breakdown potential 击穿电势,击穿电位breaking point 断点breaking strength 抗断强度breaking stress 致断应力breeder reactor 增殖反应堆bremsstrahlung 轫致辐射Brewster's law 布鲁斯特定律bridge circuit 桥式电路bridge rectifier 桥式整流器bright fringe 亮纹brightness 亮度brittle 脆的,易碎的bromine 溴Brownian movement 布朗运动brush 电刷bubble chamber 气泡室bubble raft model 泡筏模型buffer 缓冲器buffer circuit 缓冲电路bulk modulus 体积弹性模量Bunsen burner 本生灯buoyancy 浮力burette 滴定管burette stand 滴定管架burglar alarm 防盗警报器,防盗警钟buzzer 蜂鸣器by-pass 旁路byte 二进制组,字节Ccable 电缆cadmium sulphide 硫化镉caesium 铯calcite 方解石calibrate 校准,标上刻度calipers 测径器,卡钳calorie 卡路里,卡calorimeter 量热器camera 照相机cancer cell 癌细胞candela 坎德拉cantilever 悬臂capacitance 电容capacitance substitution box 换值电容箱capacitive circuit 电容电路capacitive component 电容性分量capacitive coupling 电容耦合capacitive discharge 电容性放电capacitive reactance 容抗capacitor 电容器capacitor-input filter 电容输入滤波器capacity 容量,载量capillarity 毛细现象,毛细作用capillary depression 毛细下降capillary rise 毛细上升capillary tube 毛细管capsule 囊capture 俘获carbon 碳carbon granule 碳颗粒carbon paper disc 圆形碳纸carbon-14 dating 碳14年代测定法carburettor 化油器,汽化器carrier wave 载波carry 进位castor oil 蓖麻油cataract 白内障cathode 阴极,负极cathode ray 阴极射线??cathode ray deflection tube 阴极射线偏转管cathode-ray oscilloscope 阴极射线示波器,示波器cathode-ray tube 阴极射线管cavity resonator 空腔共振器celestial telescope 天体望远镜cell 电池,细胞Celsius temperature scale 摄氏温标centimetre 厘米centralized low voltage power supply unit 中央控制低压电源箱centre of curvature 曲率中心centre of gravity 重心centre of mass 质心centre of oscillation 振荡中心centre-tapped transformer 中心抽头变压器centrifugal force 离心力centrifuge 离心机centripetal acceleration 向心加速度centripetal force 向心力Chadwick 查德威克chain reaction 连锁反应change of state 物态变化change-over switch 换向开关characteristic 特性,特征characteristic curve 特性曲线??characteristic line 特征线,特征谱??characteristic spectrum 特征光谱,特征谱charge 电荷,充电,起电charge carrier 载荷子charge conservation 电荷守恒charge density 电荷密度charge distribution 电荷分布charge to mass ratio 荷质比charged particle 带电粒子charging by contact 接触起电charging by friction 摩擦生电charging by induction 感应起电charging by sharing 授受起电charging time constant 充电时间常数,充电时间常量Charles's law 查理定律choke 扼流,抗流,扼流圈,抗流圈choke circuit 扼流电路,抗流电路chromatic aberration 色差chromatic dispersion 色散cinefilm soundtrack 电影胶片声迹circle of least confusion 最少模糊圈,明晰圈circuit 电路circuit board 电路板circuit breaker 断路器circuit symbol 电路符号circular coil 环形线圈circular motion 圆周运动circular orbit 圆周轨道circular pulse 圆形脉冲circular wave 圆形波circular wavefront 圆形波阵面,圆形波前clamp 夹钳,夹紧clap-echo method 「拍掌—回声」法cleave 裂开clinical thermometer 体温计clip 夹子clockwise moment 顺时针力矩closed circuit 闭合电路closed pipe 闭管closed tube 闭管closed-loop control system 死循环控制系统closed-loop gain 死循环增益closed-loop voltage gain 死循环电压增益closely packed 密堆积的cloud chamber 云室cloud chamber track 云室径迹coaxial 共轴,同轴coaxial cable 同轴电缆,同轴??cobalt 钴code 编码coder 编码器coefficient of dynamic friction 动摩擦系数coefficient of friction 摩擦系数coefficient of restitution 恢复系数coefficient of static friction 静摩擦系数coefficient of viscosity 黏滞系数coherent 相干的cohesion 内聚力,内聚cohesive force 内聚力coil 线圈collector 集电极,集极collector current 集电极电流,集极电流collimator 准直管,准直仪collision 碰撞colour 颜色colour code 色码,色标combinational logic 组合逻辑common emitter 共发射极common-mode voltage 共模电压commutator 换向器compass 指南针,罗盘complete circuit 完整电路component 组件,分量,组分component of force 分力compound microscope 复式显微镜compound pendulum 复摆compressed gas 压缩气体compressibility 可压缩性,压缩系数,压缩率compressible fluid 可压缩性流体compression 密部,压缩compression spring balance 压缩弹簧天平concave 凹concave lens 凹透镜concave mirror 凹镜,凹面镜concentric capacitor 同心电容器condensation 凝结,凝聚condensation nucleus 凝结核,凝聚核condensation point 凝点,凝结点condenser 聚光器,电容器,冷凝器conductance 电导conductivity 传导性,传导率conductor 导体conical pendulum 锥摆conjugate foci 共轭焦点conservation of angular momentum 角动量守恒conversation of charge 电荷守恒conservation of energy 能量守恒conservation of mechanical energy 机械能守恒conservation of momentum 动量守恒conservative force 守恒力,保守力conserved 守恒constant acceleration 恒加速度constant angular acceleration 恒角加速度constant angular velocity 恒角速度constant force 恒力constant motion 恒速运动constant pressure 定压constant speed 恒速率constant temperature 定温constant velocity 恒速度constant volume 定容constant volume gas thermometer 定容气体温度计constantan 康铜constriction 颈缩constructive interference 相长干涉contact angle 接触角contact area 接触面积contact force 接触力continuity equation 连续性方程continuous spectrum 连续光谱,连续谱continuous wave 连续波contract 收缩control experiment 对照实验,比对实验control grid 控制栅极control rod 控制棒control system 控制系统convection 对流converge 会聚converging lens 会聚透镜converging mirror 会聚镜convex 凸convex lens 凸透镜convex mirror 凸镜,凸面镜coolant 冷却剂cooling by evaporation 蒸发致冷cooling correction 冷却修正cooling curve 冷却曲线??cooling effect 冷却效应cooling system 冷却系统,散热系统coplanar forces 共面力core 心,核心Coriolis force 科里奥利力corkscrew rule 螺旋法则cornea 角膜corona discharge 电晕放电corpuscular theory of light 光的微粒学说correction 矫正,修正cosmic radiation 宇宙辐射coulomb 库伦Coulomb's law 库伦定律count rate 计数率counter 计数器counter weight 平衡锤,配重couple 力偶coupled oscillation 耦合振荡coupling 耦合covalent bond 共价键crane magnet 起重磁铁creep 蠕变crest 波峰critical angle 临界角critical damping 临界阻尼critical mass 临界质量critical point 临界点critical temperature 临界温度critical velocity 临界速度crocodile clip 鳄鱼夹cross hairs 十字丝,叉丝cross-sectional area 截面积Crova's disc 克罗瓦盘crystal 晶体crystal diffraction 晶体衍射,晶体绕射crystal lattice 晶体点阵,晶体格子,晶格crystal planes 晶面crystalline 结晶的crystallization 结晶crystallography 晶体学cubical expansivity 体积膨胀系数,体积膨胀率curie 居里current 电流current amplification 电流放大current amplification factor 电流放大因素current amplifier 电流放大器current balance 电流天平current density 电流密度current gain 电流增益current intensity 电流强度current pulse 电流脉冲current sensitivity 电流灵敏度current stabilizer 稳流器current transfer characteristic 电流转移特性current-carrying conductor 载电流导体current-voltage characteristic curve 电流—电压特性曲线?? curved mirror 曲面镜cyclotron 回旋加速器cylindrical concave lens 柱面凹透镜cylindrical concave mirror 柱面凹镜cylindrical convex lens 柱面凸透镜cylindrical convex mirror 柱面凸镜cylindrical lens 柱面透镜cylindrical mirror 柱面镜Ff-number f数,光圈数f-stop f制光圈far point 远点farad 法拉Faraday constant 法拉第常数,法拉第常量Faraday's law of electromagnetic induction 法拉第电磁感应定律fast breeder reactor 快中子增殖反应堆feedback 反馈feedback amplifier 反馈放大器feedback resistance 反馈电阻ferromagnetic substance 铁磁性物质ferromagnetism 铁磁性fictitious force 假力,伪力fidelity 保真性,保真度field coil 场线圈field effect transistor 场效应晶体管field intensity 场强field lines 场力线??field magnet 场磁铁,场磁体field of view 视场,视野field strength 场强figure of merit 优值,灵敏值filament 灯丝,丝极filter capacitor 滤波电容器filter circuit 滤波电路filter pump 滤泵final state 终态,末态final velocity 末速度fine-adjustment 微调,细调fire alarm 火警警报器,火警钟first law of thermodynamics 热力学第一定律first order spectrum 第一级光谱,第一级谱fission 裂变fission reactor 裂变反应堆fixed point 定点fixed pulley 定滑轮fixed resistor 定值电阻器flat coil 扁平线圈flat solenoid 扁平螺线管flat-bottomed flask 平底烧瓶Fleming's left hand rule 弗林明左手定则Fleming's right hand rule 弗林明右手定则floating body 浮体fluid 流体fluid dynamics 流体动力学fluorescence 荧光fluorescent screen 荧光屏,荧光幕flux 通量flux density 通量密度fly-back 回扫flywheel 飞轮focal length 焦距focal plane 焦平面focus 焦点,聚焦,对焦focus control 聚焦控制follower circuit 跟随电路foot pump 脚踏泵force 力force constant 力常数,力常量force polygon 力多边形force resolution 力的分解force triangle 力三角形force-extension curve 施力—伸长关系曲线?? forced oscillation 受迫振荡former 框forward biased 正向偏压forward current 正向电流fossil fuel 化石燃料Foucault's rotating mirror method 傅科旋转镜法frame of reference 参考坐标系,参考系Franck-Hertz experiment 弗兰克—赫兹实验Fraunhofer diffraction 夫琅和费衍射,夫琅和费绕射Fraunhofer lines 夫琅和费谱线??free electron 自由电子free fall 自由下坠,自由下落free falling body 自由落体free oscillation 自由振荡free path 自由程free space 自由空间freeze 凝固freezing point 凝固点freon 氟利昂,二氯二氟甲烷frequency 频率frequency modulation 调频,频率调制frequency response 频率响应Fresnel diffraction 菲涅耳衍射,菲涅耳绕射Fresnel's biprism 菲涅耳双棱镜friction 摩擦,摩擦力friction compensated 补偿摩擦作用frictionless motion 无摩擦运动fringe 条纹fringe pattern 条纹图形fuel rod 燃料棒fulcrum 支点full adder 全加法器full-scale deflection 满标偏转full-wave rectification 全波整流full-wave rectifier 全波整流器fundamental frequency 基频fundamental mode of vibration 基谐振动模式fundamental note 基音fundamental quantity 基本量fundamental unit 基本单位fuse 保险丝fuse rating 保险丝额定值fusion 熔解,聚变fusion point 熔点fusion reactor 聚变反应堆GG - clamp G-形钳gain 增益gain control 增益控制galaxy 星系Galilean telescope 伽利略望远镜Galileo's thought experiment 伽利略假想实验galvanometer 电流计,检流计gamma radiation 伽玛辐射gamma ray 伽玛射线??gap 隙gas 气,气体gas pressure 气体强压,气压gaseous phase 气相gaseous state 气态gauge 规,计Gauss theorem 高斯定理Geiger counter 盖革计数器Geiger-Marsden scattering experiment 盖革—马斯登散射实验Geiger-Muller counter 盖革—弥勒计数器Geiger-Muller tube 盖革—弥勒管general gas equation 普适气体方程general gas law 普适气体定律generator 发电机genetic effect 遗传效应geometrical optics 几何光学germanium 锗ghost effect 迭影效应glancing angle 掠射角glass fibre 玻璃纤维glycerine 甘油gold foil 金箔fold leaf electroscope 金箔验电器gradient 斜率,梯度graduated cylinder 量筒Graham's law of diffusion 格拉哈姆散定律grain 粒,晶粒gramophone record 唱片,唱碟graph 图,线图,图表graphical method 图解法grating 光栅grating spectrometer 光栅光谱仪,光栅分光计gravitational acceleration 重力加速度gravitational attraction 引力,重力gravitational constant 引力常数,引力常量gravitational field 引力场,重力场gravitational force 引力,重力gravitational mass 引力质量gravitational potential 引力势,重力势gravitational potential difference 引力势差,重力势差gravitational potential energy 引力势能,重力势能gravity 重力grazing incidence 掠入射,切入射greenhouse effect 温室效应grid 栅极grid control 栅极控制grid system 电力网groove 纹道,针槽,开槽ground 接地ground state 基态guinea and feather experiment 「硬币与羽毛」实验Hhair spring 游丝half adder 半加法器half-life 半衰期half-silvered mirror 半镀银镜half-wave rectification 半波整流half-wave rectifier 半波整流器Hall effect 霍耳效应Hall probe 霍耳探测器Hall voltage 霍耳电压hand stroboscope 手动式频闪观测器harmonic 谐音harmonic motion 谐运动harmonic oscillation 谐振荡head-on collision 对正碰撞,正碰heat 热,热量,加热,热学heat absorbent 吸热剂heat absorber 吸热器heat absorption 吸热,热吸收heat capacity 热容量heat conduction 热传导heat exchange 热交换heat flow 热流heat gain 热增益,得热heat insulation 热绝缘,隔热heat loss 热损耗,失热heat proof 耐热的,隔热的heat pump 热泵heat radiation 热辐射heat reservoir 热库,储热器heat sink 热壑heat transfer 热传递,热转移heater 发热器,加热器heating effect 热效应heating element 发热组件Helmholtz coils 亥姆霍兹线圈henry 亨利,亨hertz 赫兹,赫high dispersion prism 高色散棱镜high tension 高电压hole 空穴,空子hollow plastic lens 空心塑料透镜hollow plastic prism 空心塑料棱镜hologram 全息图holography 全息术,全息学Hooke's law 虎克定律horizontal 水平horizontal component 水平分量horizontal deflection 水平偏转horseshoe magnet 蹄形磁铁hot cathode 热阴极hour 小时Huygens' principle 惠更斯原理hydraulic press 水压机hydroelectric power 水力发电hydrogen bomb 氢弹hygrometer 湿度计hyperbolic orbit 双曲线轨道hypodermic needle 皮下注射针头hypodermic syringe 皮下注射针筒hypothesis 假说,假设hysteresis 滞后现象Iideal gas 理想气体ideal gas equation 理想气体方程ideal gas temperature scale 理想气体温标ideal machine 理想机械illuminate 照明,照亮image 像image distance 像距immerse 浸没immersion heater 浸没式电热器impact 碰撞impedance 阻抗impulse 冲量impurity 杂质in focus 焦点对准in parallel 并联in phase 同相in series 串联incident ray 入射线??incident wavefront 入射波阵面,入射波前inclined plane 斜面incoherent 不相干的incompressible fluid 非压缩性流体indicator 指示器indirectly heated cathode 旁热式阴极induced charge 感生电荷induced current 感生电流induced e.m.f. 感生电动势induced voltage 感生电压??inducing charge 施感电荷inducing current 施感电流inductance 电感inductance capacitance coupled circuit 感容耦合电路inductance coil 电感线圈induction 感应induction heating 感应生热inductive circuit 电感电路inductive component 电感性分量inductive reactance 感抗inductor 电感器,感应器inelastic collision 非弹性碰撞inert gas 惰性气体inertia 惯性,惯量inertia balance 惯性秤inertial frame 惯性坐标系,惯性系inertial mass 惯性质量infra-red detector 红外线探测器infra-red radiation 红外辐射infra-red ray 红外线??initial state 初态initial velocity 初速度input 输入input bias current 输入偏压电流input characteristic 输入特性input current 输入电流input offset current 输入补偿电流input power 输入功率input resistance 输入电阻input voltage 输入电压input-output voltage characteristic 输入—输出电压特性instantaneous acceleration 瞬时加速度instantaneous angular velocity 瞬时角速度instantaneous current 瞬时电流instantaneous power 瞬时功率instantaneous speed 瞬时速率instantaneous velocity 瞬时速度instantaneous voltage 瞬时电压insulation 绝缘insulator 绝缘体integrated circuit 集成电路intensity 强度intensity control 强度控制intensity of current 电流强度interaction 相互作用interatomic force 原子间力interatomic potential 原子间势,原子间位interatomic separation 原子间距intercept 截距,截段interconversion 互换interference 干涉interference pattern 干涉图形internal energy 内能internal force 内力internal resistance 内电阻internal work 内功international system of units 国际单位制,公制,十进制interval 间隔intrinsic semiconductor 纯半导体,本征半导体inverse-square law 平方反比定律inverted 倒立的inverter 反相器,倒换器inverting input 反相输入ion 离子ion-pair 离子偶,离子对ionic bond 离子键ionic structure 离子结构ionization 电离作用ionization chamber 电离室ionization current 电离电流ionization energy 电离能ionization potential 电离电势,电离电位ionization voltage 电离电压ionize 电离ionized atom 离子ionized layer 电离层ionizing power 致电离能力,致电离本领ionizing radiation 致电离辐射ionosphere 电离层iris 虹膜,可变光阑iron core 铁心iron filings 铁粉irreversible process 不可逆过程isobar 等压线,同质异序素isobaric expansion 等压膨胀isobaric process 等压过程isochronous oscillation 等时振荡isotherm 等温线??isothermal process 等温过程isotope 同位素isovolumetric process 等容过程JJaegers method 耶格法jet propulsion 喷气推进jockey 滑动触头joule 焦耳joulemeter 焦耳计junction 连接,接头junction diode 面结型二极管junction transistor 面结型晶体管KKaleidoscope 万花筒Kelvin 开尔文,开Kelvin temperature scale 开氏温标Kepler's law 开普勒定律key 电键kilogram 千克kilowatt 千瓦特,千瓦kilowatt-hour 千瓦小时,千瓦时kilowatt-hour meter 电表,千瓦时计kinematics 运动学kinetic energy 动能kinetic friction 动摩擦kinetic theory 分子运动论kinetic theory model 分子运动模型kinetic theory of gases 气体分子运动论Kirchhoff's law 基尔霍夫定律kit 套件knife-edge 刃形支承,刀刃,刀边kryton 氪Kundt's tube 孔脱管Llagging 保温套laminar flow 层流laminated 分层的,迭片的laser 激光,激光器laser beam 激光束laser material 激光材料latch 闩锁latent heat 潜热lateral 横向,侧向,旁向lateral inversion 横向倒置lateral magnification 横向放大,横向放大率lateral search coil 横向探察线圈lattice 点阵,晶格lattice spacing 点阵间隔,点阵间距law 定律law of conservation of momentum 动量守恒定律law of reflection 反射定律law of refraction 折射定律lead 导线,铅lead-acid accumulator 铅酸蓄电池leakage current 漏泄电流least distance of distinct vision 最小明视距离Leclanche cell 勒克朗谢电池length 长度lens 透镜,晶体,晶状体lens formula 透镜公式lens holder 透镜座lens marker's formula 透镜制造者公式Lenz's law 楞次定律leukaemia 白血病lever 杠杆light 光,光学light beam 光束,光柱light dependent resistor 光敏电阻器light emitting diode 发光二极管light guide 光导light pipe 光导管light ray 光线??light sensitive resistor 光敏电阻器light source 光源lightning 闪电lightning conductor 避雷针limiting angle 极限角limiting friction 极限摩擦line of action 作用线??line of force 力线??line spectrum 线状光谱,线状谱linear air track 线性气垫导航linear electronics 线性电子学linear expansivity 线性膨胀系数,线性胀率linear flow 线流linear momentum 线动量linear voltage amplification 线性电压放大率linearly polarized wave 线偏振波liquefaction 液化liquid 液体liquid crystal 液晶体liquid phase 液相liquid pressure 液体压强liquid-in-glass thermometer 玻管液体温度计Lissajous figure 利萨如图形live 载电,活线,火线Lloyd's mirror 洛埃镜load 负荷lodestone 磁石logic gate 逻辑门logic level 逻辑电平,逻辑级logic level indicator 逻辑电平指示器,逻辑级指示器logic value 逻辑值long sight 远视long wave 长波longitudinal magnification 纵向放大,纵向放大率longitudinal wave 纵波loop 回路,圈Lorentz force 洛兰兹力Lorentz rotating disc 洛兰兹旋转盘loudness 响度loudspeaker 扬声器low frequency a.c. generator 低频交流发电机low voltage 低电压low voltage immersion heater 低压浸没式电热器lower limit 下限lycopodium powder 石松粉Lyman series 赖曼系,赖曼光谱MMach number 马赫数machine 机械macroscopic 宏观的magnadur magnet 玛格纳多尔磁铁magnet 磁铁,磁体magnet keeper 永久磁铁衔铁magnetic domain 磁畴,磁域magnetic effect 磁效应magnetic field 磁场magnetic field board 磁场板magnetic field intensity 磁场强度magnetic field strength 磁场强度magnetic flux 磁通量magnetic flux density 磁通量密度magnetic flux linkage 磁链,磁键,磁通匝数magnetic force 磁力magnetic hysteresis 磁滞magnetic induction 磁感应强度,磁感应magnetic line of force 磁力线?? magnetic material 磁性材料magnetic meridian 磁子午线??magnetic moment 磁矩magnetic north pole 磁北极magnetic permeability 磁导率magnetic pole 磁极magnetic screen 磁屏magnetic shield 磁屏magnetic south pole 磁南极magnetic susceptibility 磁化率magnetic tape 磁带magnetic tape recorder 磁带录音机magnetic torque 磁矩magnetic track 磁迹magnetism 磁学,磁性magnetization 起磁,磁化作用magnetize 磁化magnetizing current 磁化电流magnification 放大,放大率magnified 放大的magnifying glass 放大镜magnifying power 放大率magnitude 量,量值mains frequency 市电频率mains immersion heater 市电浸没式热器mains supply 市电电源majority carriers 多数载流子malleable 展性的,韧性的Maltese cross tube 马尔塔十字管manometer 流体压强计mass 质量mass defect 质量亏损mass number 质量数mass spectrometer 质谱仪mass-energy relation 质能关系matter wave 物质波maximum error 最大误差mean free path 平均自由程measurement 测量mechanical advantage 机械利益mechanical efficiency 机械效率mechanical energy 机械能mechanical oscillation 机械振荡mechanical wave 机械波mechanism 机制,机理medium 介质medium wave 中波Melde's experiment 迈尔德实验melt 熔化melting point 熔点meniscus 弯液面,弯月面meniscus lens 凹凸透镜,弯月形透镜mercury 汞,水银metal fatigue 金属疲劳fetal grid 金属珊metallic bond 金属键metastable 亚稳态的,介稳态的method of dimensions 维量法,因次法method of no-parallax 无视差法metre 米metre bridge 滑线电桥,米尺电桥metre rule 米尺mica 云母mica capacitor 云母电容器microammeter 微安培计,微安计microelectronics 微电子学micrometer 测微计micrometer screw gauge 螺旋测微计microphone 微音器,传声器microscope 显微镜microscopic 微观的microwave 微波microwave apparatus 微波仪器microwave receiver 微波接收器microwave transmitter 微波发送器milliammeter 毫安计,毫安计Millikan experiment 密立根实验millimetre 毫米minimum deviation 最小偏向minority carrier 少数载流子minute 分,分钟mirage 海市蜃楼,蜃景mirror 镜mirror formula 球面镜公式mobility 动性,迁移率mode 模式model eye 眼球模型model power line 输电线模型moderator 减速剂,缓和剂modulation 调制,调节module 组件modulus of elasticity 弹性模量modulus of rigidity 刚性模量molar gas constant 摩尔气体常数,摩尔气体常量molar heat capacity 摩尔热容量molar volume 摩尔体积mole 摩尔molecular bombardment 分子撞击molecular force 分子力molecular motion 分子运动molecular polarization 分子极化molecular separation 分子间距molecular structure 分子结构molecule 分子moment 矩moment arm 矩臂,力臂moment of couple 力偶矩moment of dipole 偶极矩moment of force 力矩moment of inertia 转动惯量moment of momentum 动量矩momentum 动量monatomic molecule 单原子分子monochromatic light 单色光motion 运动motor 电动机motor rule 电动机法则movable pulley 动滑轮moving-coil galvanometer 动圈式电流计,动圈式检流计moving-coil loudspeaker 动圈式扬声器moving-coil meter 动圈式电表multiflash photography 多闪照相法multimeter 万用电表,多用电表multiple image 复像multiple reflection 多次反射multiplication process 倍增过程multiplier 倍加器multivibrator 多谐振荡器musical instrument 乐器mutation 突变multiple-slit interference 多缝干涉mutual inductance 互感mutual induction 互感应mutually perpendicular 互相垂直的Nn-type semiconductor n型半导体NAND gate 「与非」门,「非与」门naphthalene ???natural frequency 固有频率,自然频率nature 本质near point 近点necking 颈缩negater 反相器,倒换器negative charge 负电荷negative feedback 负反馈negative ion 负离子negative supply rail 负供电轨negative terminal 负端钮,负接线柱net force 净力network 网络,网络neutral 中性,中线??neutral equilibrium 中性平衡,随遇平衡neutral point 中和点neutrino 中微子neutron 中子neutron number 中子数newton 牛顿Newton's first law of motion 牛顿运动第一定律Newton's law of gravitation 牛顿万有引力定律Newton's ring 牛顿环Newton's second law of motion 牛顿运动第二定律Newton's third law of motion 牛顿运动第三定律Newtonian fluid 牛顿流体Newtonian mechanics 牛顿力学nichrome wire 镍铬线,镍铬合金线??Nicol prism 尼科尔棱镜nitrogen 氮no-parallax 无视差nodal line 节线??node 节点,波节noise 噪音noise level 噪音级noise pollution 噪音污染non-conservative force 非守恒力,非保守力non-inertial frame 非惯性坐标系,非惯性系non-inverting input 非反相输入non-Newtonian fluid 非牛顿流体non-ohmic conductor 非奥姆导体non-ohmic resistor 非奥姆电阻器NOR gate 「或非」门,「非或」门normal 法线??normal incidence 正入射normal reaction 法向反作用力normal stress 法向应力north pole 北极NOT gate 「非」门note 音,乐音,律音nozzle 喷嘴nuclear 原子核的nuclear energy 核能nuclear energy level 核能级nuclear fission 核裂变nuclear force 核力nuclear fusion 核聚变nuclear pile 核反应堆nuclear radiation 核辐射nuclear reaction 核反应nuclear rector 核反应堆nuclear waste 核废料nuclear weapon 核武器nucleon 核子nucleon number 核子数,质量数nucleus 原子核nuclide 核素Oobject 物,物体object distance 物距objective 接物镜,物镜。
麦克多高中英语3500词汇

confidential confirm conflict confuse congratulate congratulation
connect
connection
consequence
consider
content continent continue contrary contribute control
bamboo ban banana
bag
baggage bake bakery balance ballet balloon
band
bandage bank bar barbecue
barber
barbershop bare bargain
ballpoint
barrier base baseball
cross crossing
crossroads
crowd
cruel
cube
cubic
credit
crime
culture
cupboard cure
criminal
curious currency curtain custom customer customs cut cycle cyclist daily dam
attain
attempt attend attention attitude
astronomer
astronomy athlete athletic
attract
attraction attractive audience
aunt
Australia author
award aware away
authority
carrot
cartoon carve case cash cast
TriTech DS860系列微波 PIR门激光报警器说明书
Installation Instructionsfor the DS860 SeriesTriTech Microwave/PIR Intrusion Detectors 1.0Specifications•Dimensions (HxWxD): 5 in. x 2.8 in. x 2.2 in.(12.7 cm x 7.1 cm x 5.6 cm)•Input Power:9 to 15 VDC, 16 mA DC nominal(up to 48 mA DC during walk testing ortrouble conditions). Useonly anApproved Limited Power Source.•Standby Power:No internal standby battery.Standby power must be provided byan Approved Limited Power Source.Sixteen mAh required for each hour ofstandby time needed. For UL Listedrequirements, four hours (64 mAh)minimum are required.•Alarm Relay:Silent operating Normally Closedreed relay. Contacts rated 3 watts,125 mA, 28 VDC maximum for DCresistive loads; and protected by a4.7 ohm, 0.5 watt resistor in thecommon "C" leg of the relay. To beconnected to a SELV (Safety Extra-LowVoltage) circuit only. Do not use withcapacitive or inductive loads.•Temperature Range:-40°F to +120°F (-40°C to +49°C).For UL Listed requirements, thetemperature range is +32°F to +120°F(0°C to +49°C), indoor use.•Microwave Frequency:DS860:10.525 GHz (UL Listed)DS860A:10.687 GHz (Export only, not ULListed)DS860B:9.9 GHz (Export only, not UL Listed))•Coverage:Broad (standard):60 ft. by 60 ft. (18 m by 18 m)Long Range (optional):100 ft. by 10 ft. (30 m by 3 m)•Internal Pointability:+2° to –10° Vertical, ±10° Horizontal.•Tamper:Normally Closed (with cover on).Contacts rated at 28 VDC, 125 mAmax. To be connected to a SELV(Safety Extra-Low Voltage) circuitonly. Connect tamper circuit to 24-hourprotection circuit.•Options:B328 Gimbal Mount Bracket, B335Low Profile Swivel Mount Bracket,B338 Ceiling Mount Bracket, OLR92Long Range Barrier LensNOTE:Use of a bracket may reduce range and increase dead zone areas.• Reading Bosch Security Systems, Inc. Product Date Codes For Product Date Code information, refer to the BoschSecurity Systems, Inc. Web site at:/datecodes/•Compliance: This device complies with Part 15 of the FCC Rules and with RSS-210 of Industry and Science Canada.Operation is subject to the following two conditions:(1)this device may not cause harmful interference, and(2)this device must accept any interference received,including interference that may cause undesirableoperation.Changes or modifications not expressly approved by BoschSecurity Systems can void the user’s authority to operate theequipment.2.0Installation ConsiderationsNOTE:The DS860 is not recommended for installationscontaining pets or small animals. Use the DS820 orDS835 for such installations.•Never install the detector in an environment that causes an alarm condition in one technology. Good installations start with the LED OFF when there is no target motion. It should never be left to operate with the tri-color LED in a constant or intermittent green, yellow, or red condition.•Point the unit away from outside traffic (roads/alleys).NOTE:Microwave energy will pass through glass and most common non-metallic construction walls.•Avoid installations where rotating machines (e.g. ceiling fans) are normally in operation within the coverage pattern. Point the unit away from glass exposed to the outdoors and objects that may change temperature rapidly.NOTE:The PIR detector will react to objects rapidly changing temperature within its field-of-view.•Eliminate interference from nearby outside sources.3.0Mounting•Select a location likely to intercept an intruder moving across the coverage pattern. The surface should be solid andvibration-free. Mounting height range is 6 to 8 ft. (1.8 to2.4 m). Recommended mounting height is 7.5 ft. (2.3 m).•Remove the cover. Insert a flathead screwdriver into the locking tab hole at the bottom front of the detector. Pull thecover up and forward.VerticalAdjustScrewTri-colorLEDT erminalStripLEDOn/OffPinsMW0°- 4°- 8°OnOffMicrowaveRange AdjustPIRSensitivitySelection PinsVertical AdjustScaleLook Down LensMIN MAXFace of Lens(masking area) Corner MountKnockout (4)Surface MountKnockout (2)WireEntrancesBracket MountKnockoutVertical AdjustScrew MountCover T ab andLocking Screw HoleWireEntrances•Remove the circuit board from the base. Loosen the Vertical Adjust Screw and slide the circuit board down, then out.•Break away the appropriate thin-wall wire entrance and mounting hole coverings in the base.•Using the base as a template and aligning it so that the detector will be mounted with the terminal block at the top and the PIR lens at the bottom, mark the location of the mounting holes on the mounting surface. Pre-start the mounting screws.Page 2© 2011 Bosch Security Systems, Inc.DS860 Series Installation InstructionsOnOffINTSTD•Route wiring as necessary. Route to the rear of the base and through the wire entrance. Make sure all wiring is unpowered before routing.•Securely attach the base to the mounting surface.•Return the circuit board to the base and tighten the Vertical Adjust Screw.4.0WiringCAUTIONOnly apply power after all connections have been made and inspected. Do not coil excess wiring inside detector.NOTE:Input power must use only an Approved Limited Power Source. Alarm and Tamper Contacts to be connected to a SELV (Safety Extra-Low Voltage) circuit only.9-15 VDCInput–+C NC Alarm RelaySP TSPT Tamper1234Alarm5678Tamper •Terminals 1 (–) & 2 (+): Voltage limits are 9 to 15 VDC. Use no smaller than #22 AWG (0.8 mm) wire pair between the detector and the power source.•Terminals 3 & 4: Alarm relay (reed) contacts rated 3 watts,125 mA, 28 VDC maximum for DC resistive loads and protected by a 4.7 ohm, 0.5 watt resistor.NOTE:Do not use with capacitive or inductive loads.•Terminals 5 and 8: Spare.•Terminals 6 & 7: Tamper contacts rated at 28 VDC, 125 mA.NOTE:Plug the wire entrance hole with the foam plug provided after all wiring connections have been made.5.0LED OperationThe detector uses a tri-color LED to indicate the various alarm and supervision trouble conditions that may exist. See chart below.LEDCauseSteady red Unit alarmSteady yellow Microwave activation (walk test)Steady green PIR activation (walk test)Flashing redWarm-up period after power-up Flashing red (4 pulse sequence)Replace UnitIf the detector experiences a Microwave or PIR self-test failure, it is in need of replacement.NOTE:During walk testing, the LED will light for the first technology (microwave or PIR) and then light red to indicate a detector alarm. The LED will not indicate activation of the second technology by lighting its color.6.0Feature Selection6.1LED On/Off PinsThe ON position allows operation of the tri-color LED. If LEDindication is not desired after setup and walk tests are completed,place in the OFF position. The OFF position does not prevent the LED from indicating supervision trouble conditions. 6.2PIR Sensitivity Selection PinsFor selection, place the plug across the pins marked STD for Standard or INT for Intermediate mode.•Standard Sensitivity: The recommended setting for maximum false alarm immunity. Tolerates environmental extremes on this setting.•Intermediate Sensitivity: The recommended setting for any location where an intruder is expected to cover only a small portion of the protected area. Tolerates normal environments on this setting. This setting will improve your intruder catch performance.7.0Set-up and Walk TestsSelect the vertical starting angle from this chart:To adjust the vertical startingangle for the desired mounting heightand range,loosen thevertical adjustscrew and slidethe board up, topoint the angle down. Note the settings on the vertical adjust scale.•Place the LED plug in the ON position and replace the cover.7.1Establishing PIR Pattern Coverage•Turn the Microwave range adjust to minimum.•Replace the cover and snap it into place. This will close the tamper switch.•Wait two minutes minimum after applying power to start walk tests.NOTE :During the warm-up period, the tri-color LED will flash red until the unit has stabilized (approximately 1 to 2 minutes)and has seen no movement for two seconds. When the tri-color LED stops flashing, the detector is ready to be tested. With no motion in the protection area, the tri-color LED should be OFF. If the LED is on, re-check theprotection area for disturbances affecting the microwave or PIR technologies.•Walk test across the pattern at its farthest edge, then several times closer to the detector. Start walking from outside of the intended protection area, and observe the tri-color LED. The edge of the pattern is determined by the first green, PIR activation of the LED (or the first red activation if the yellow microwave LED activates first).•Walk test from the opposite direction to determine both boundaries. The center of the pattern should be pointed toward the center of the intended protection area.NOTE :The pattern may be moved ±10° horizontally by rotating the lens window left or right.•Slowly bring your arm up and into the pattern to mark the lower boundary on PIR alarm. Perform this task at 10 to 20 ft. (3 to 6m) from the unit. Repeat from above for the upper boundary.The center of the pattern should not be tilted upward .DS860Broad Long Range MountingHeight60 ft.(18 m)100 ft.(30 m)6.5 ft. (2 m)-4°-2°7.5 ft. (2.3 m)-5°-3°8.0 ft. (2.4 m)-6°-3°NOTE:If desired coverage cannot be achieved, try angling the coverage pattern up or down to assure the pattern is notaimed too high or low. The angle of the PIR pattern may bevertically positioned between -10° and +2° by looseningthe Vertical Adjust screw and sliding the circuit board up ordown. Moving the board up will angle the patterndownward.•Tighten the screw snug when positioning is completed.7.2Establishing Microwave CoverageNOTE:It is important to wait one minute after removing/replacing the cover so the microwave portion of the detector cansettle, and to wait at least ten seconds between thefollowing walk testing procedures.•The tri-color LED should be OFF before walk testing.•Walk test across the pattern at the intended coverage’s farthest end. Start walking from outside the intendedprotection area and observe the tri-color LED. The edge of the microwave pattern is determined by the first yellow, microwave activation of the LED (or the first red activation if the green PIR LED activates first).•If adequate range can not be reached, increase the Microwave Range Adjust slightly. Continue walk testing (waiting oneminute after removing/replacing the cover) and adjusting therange until the farthest edge of desired coverage has beenaccurately placed.NOTE:Do not adjust the microwave range higher than required.Doing so will enable the detector to catch movementoutside of the intended coverage pattern.•Walk test the unit from all directions to determine all the Microwave pattern boundaries. Wait at least ten secondsbetween walk tests.7.3Establishing Detector Coverage•The tri-color LED should be OFF before walk testing.•Walk test the unit from all directions to determine the detection boundaries. A detector alarm is signaled by the first redactivation of the tri-color LED after an initial green or yellowactivation.8.0Supervision FeaturesThe supervision features function as follows:•PIR/Microwave: The complete circuit operation of these subsystems is checked approximately every 24 hours. If thePIR or MW subsystem fails, the tri-color LED will flash red 4times per cycle and the unit should be replaced.•Default: If the microwave subsystem fails, the detector will default to PIR technology protection. The PIR signal sensitivity will automatically change from INT to STD.9.0MaintenanceAt least once a year, the range and coverage should be verified. To ensure continual daily operation, the end user should be instructed to walk through the far end of the coverage pattern. This ensures an alarm output prior to arming the system.10.0Coverage PatternsThe DS860 has a standard broad coverage pattern or an optional long-range coverage pattern. The protected coverage area is where the microwave and PIR patterns overlap.An optional Look Down lens is located under the detector. This lens must be unmasked before it is operational. Use caution to remove the black mask only. Do not attempt to remove the white lens assembly. The Look Down lens is not recommended for installations containing pets or small animals. The Look Down zone is shown in black on the Coverage Pattern drawings.Standard Broad Coverage0102030405060Feet0369121518Meters10 ft.0 ft.-5°SIDE VIEWA-IJ-MN-PQ, R3Meters7.5 ft. 2.3 m0369121518Meters0102030405060Feet0 Feet102030102030369369TOP VIEW BACDGHIJKLMNOPEFRQ0Meters Look-DownDS860 Series Installation Instructions© 2011 Bosch Security Systems, Inc.Page 32/11DS860 Series Installation InstructionsP/N: F01U068628-12 Page 4© 2011 Bosch Security Systems, Inc.130 Perinton Parkway, Fairport, New York Long Range Barrier CoverageMeters300Feet 100055TOP VIEW102030405060708090369121518212427001.51.5ABCD Meters300Feet10010SIDE VIEW1020304050607080903691215182124270-3°3Meters ABCD 7.52.3Look-Down 10.1Pattern MaskingThe PIR coverage pattern may be masked using masking tape or electrical tape on the inside (grooved side) of the lens to cover the appropriate pattern areas as shown in the following illustrations.Always walk test for the desired coverage after masking.A B C D E F G H I N J Q K O L R M PDS860 Standard LensA B C DOptional Long RangeBarrier LensNOTE:Masking only eliminates the PIR portion of the coverage and has no effect on the microwave pattern.。
机械工程学专业词汇英语翻译(B)
back flow 回流逆流 back mixing 反混 back pressure 背压⼒ back reaction 逆反应 back substitution 回代 backpressure 反向压⼒;反压⼒ backscattering technique 逆散射法 backstreaming 逆流 backward difference 后向差分 backward motion 逆向运动 backward precession 逆旋进 backward thrust 逆推⼒ backward wave 逆向⾏波 backwash 后涡流 backwater 回⽔ backwater curve 回⽔曲线 backwater distance 回⽔距离 backwater function 回⽔函数 backwater surface 回⽔⾯ backwater surge 回⽔浪 baer law 巴尔定律 baeyer strain theory 贝耶尔应变理论 balance 平衡 balance condition 平衡条件 balance equation 平衡⽅程 balance force 平衡⼒ balance weight 平衡锤 balanced load 平衡负载 balanced system of force 平衡⼒系 balancing 平衡 balancing force 补偿⼒ balancing in situ 本机平衡 balancing machine 平衡试验机 balancing method 平衡法 balancing speed 平衡速率 ball support 球⾯⽀座 ballast 压载物 ballistic 弹道的 ballistic coefficient 弹道系数 ballistic constant 弹道常数 ballistic curve 弹道曲线 ballistic deflection 弹道偏差 ballistic error 冲惑差 ballistic pendulum 冲悔 ballistic rocket 弹道⽕箭 ballistic trajectory 弹道轨迹 ballistic wave 弹道波 ballistics 弹道学 balloon ⽓球 balloon borne rocket ⽓球发射⽕箭 banded structure 带状结构 bandwidth 带宽 bank 侧向倾斜 bar 巴 bar construction 棒构造 baric topography ⽓压形势 baric wave ⽓压波 barocline 斜压 baroclinic fluid 斜压铃 baroclinity 斜压性 barodynamics 重结构⼒学 barograph ⽓压计 barometer ⽓压计 barometric altitude ⽓压⾼度 barometric column ⽓压柱 barometric gradient ⽓压梯度 barometric height ⽓压⾼度 barosphere ⽓压层 barotropic equation 正压⽅程 barotropic equilibrium 正压平衡 barotropic flow 正压流 barotropic fluid 正压铃 barotropic instability 正压不稳定 barotropy 正压性 barrel vault 圆柱壳 barrier 障碍 barycenter 重⼼ barycentric 重⼼的 barycentric coordinates 重⼼坐标 barycentric system 重⼼系 barycentric velocity 重⼼速度 base flow 底流 base pressure 底⾯压⼒ basic equation 基本⽅程 basic load 基本载荷 basin 硫 basset force 巴塞特⼒ bathyal region 半深海区 bauschinger effect 包⾟格效应 beach 海岸 beam 梁 beam axle 梁式轴 beam balance 杠杆秤 beam column 梁杆 beam structure 梁结构 beam supported of both ends 简⽀梁 beam truss 桁架梁 beam with varying section 变截⾯梁 bearing ⽅位;轴承 bearing capacity 承载⼒ bearing friction ⽀承摩擦 bearing friction loss 轴承摩擦损失 bearing line ⽅位线 bearing load 轴承荷载 bearing power 承重能⼒ bearing pressure ⽀承压⼒ bearing strain 承载应变 bearing strength 承载强度 bearing stress 承载应⼒ bearing surface ⽀承⾯ beat 差拍 beat frequency 拍频 beat period 拍频周期 bed load 推移质 beginning of curve 曲线起点 behavior ⾏为 bell pressure gage 钟型压⼒计 bell type manometer 钟型压⼒计 bellows 波纹管 belt tension ⽪带张⼒ bend test 弯曲试验 bending 弯曲 bending center 弯曲中⼼ bending fatigue limit 弯曲疲劳极限 bending line 弯曲线 bending load 弯曲载荷 bending moment 弯矩 bending moment density 弯矩密度 bending moment diagram 弯矩图 bending radius 弯曲半径 bending rigidity 抗弯刚度 bending strain 弯曲应变 bending strength 抗弯强度 bending stress 弯曲应⼒ bending test 弯曲试验 bending vibration 弯曲振动 bending wave 弯曲波 beneding stress 挠应⼒ bernoulli constant 伯努利常数 bernoulli equation 伯努利⽅程 bessel function 贝塞⽿函数 beta ratio ⽐压 biaxial stress 双轴向应⼒ bifurcated shock 分岔激波 bifurcation 分⽀ bifurcation point 分⽀点 biharmonic function 双谐函数 bilateral 双向的 bilateral constraint 双边约束 billow ⼤浪 bimoment 双⼒矩 bimotor 双发动机飞机 binary collision 双碰撞 binary diffusion coefficient ⼆元扩散系数 binder 结合剂 binding agent 结合剂 binding energy 结合能 binding force 结合⼒ bingham body 宾汉物体 bingham flow 宾汉怜 bingham fluid 宾汉铃 bingham model 宾汉模型 binodal seiche 双节点驻波振荡 biological similarity ⽣物学相似性 biomechanics ⽣物⼒学 biomechanics of bone ⾻⼒学 biomechanics of sports 运动⽣物⼒学 biorheology ⽣物龄学 biot savart law 毕奥萨伐尔定律 biplane 双翼飞机 bipolar coordinates 双极坐标 birefringence 双折射 bivector 双⽮ black body 绝对⿊体;⿊体 black body radiation ⿊体辐射 blade 叶⽚ blade efficiency 叶⽚效率 blade exit angle 叶⽚出⼝⾓ blade grid 叶栅 blade inlet angle 叶⽚⼊⼝⾓ blade loss 叶⽚损失 blade outlet angle 叶⽚出⼝⾓ blade pitch 叶⽚距 blading 叶⽚装置 blast 送风 blast nozzle 喷⽓嘴 blast of wind 阵风 blast pressure 风压 blast tuyere 风⼝ blast volume 风量 blasting 爆破 blasting chamber 起爆室 blasting efficiency 爆破效率 blimp 软式飞艇 blocking phenomenon 堵塞现象 blood flow ⾎流 blood visco elasticity ⾎液粘弹性 blood viscosity ⾎液粘度 blower 吹风器 blown flap 吹⽓襟翼 bluff body 钝体 blunt body 钝头体 body centroide 本体极迹 body fixed system 物体固定坐标系 body force 体⼒ body of revolution 旋转体 boger fluid 保格铃 boiling 沸腾 boiling point 沸点 boiling temperature 沸点温度 boltzmann constant 玻⽿兹曼常数 boltzmann distribution 玻⽿兹曼分布 boltzmann factor 玻⽿兹曼因⼦ boltzmann h theorem 玻⽿兹曼 h 定理 boltzmann law 玻⽿兹曼定律 boltzmann transport equation 玻⽿兹曼输运⽅程 bolus flow 团流 bond energy 结合能 bond strength 附着强度 bonding force 耦合⼒ boost 升压 booster 加速器 bootstrap dynamics 靴袢动⼒学 border 边缘 borderline 边线 bore 内径 borehole 钻孔 born green equation 玻陡窳址匠眺 born von kormon boundary condition 玻⽃肟 呓缣跫 bottom chord 底弦 bottom current 底流 bottom standing wave 底层驻波 bottom velocity 底层速度 bouguer wave number 布格波数 bounce 回跳 bound energy 束缚能 bound state 束缚态 bound vector 束缚⽮量 bound vortex 约束涡 boundary 边界 boundary collocation 边界配置 boundary condition 边界条件 boundary effect 边界效应 boundary element method 边界元法 boundary friction 边界摩擦 boundary layer 边界层 boundary layer control 边界层控制 boundary layer equation 边界层⽅程 boundary layer flow 边界层怜 boundary layer method 边界层法 boundary layer region 边界层区域 boundary layer separation 边界层分离 boundary layer thickness 边界层厚度 boundary layer transition 边界层转捩 boundary method 边界解法 boundary of the air mass ⽓团的边界 boundary part 边界部分 boundary point 边界点 boundary surface 边界⾯ boundary value 边界值 boundary value problem 边界值问题 boundary wave 界⾯波 bourdon gage 布尔登压⼒计 boussinesq approximation 布⾟涅斯克近似 boussinesq equation of motion 布⾟涅斯克运动⽅程 bow 船⾸ bow shock wave 头波 bow wave 头波 brachistochrone 最速降线 bracket 悬臂梁 brake 制动器 brake horsepower 制动马⼒ brake parachute 制动伞 brake power 制动功率 brake pressure 闸压⼒ brake test 闸试验 braking 制动 braking distance 制动距离 braking force 制动功率 braking moment 制动⼒矩 braking rocket 制动⽕箭 break through 穿透 breakaway 分离 breakdown test 断裂试验 breaker 破浪 breaking angle 断裂⾓ breaking elongation 断裂伸长 breaking load 断裂负截 breaking of wave 海浪断裂 breaking point 断点 breaking strain 断裂应变 breaking strength 裂断强度 breaking stress 破坏应⼒ breaking test 致断试验 breaking waves 碎波 breaking weight 断裂负截 bridge truss 桥桁架 brinell hardness 布⽒硬度 brinell hardness test 布⾥涅⽿硬度试验 brittle 脆的 brittle behavior 脆性⾏为 brittle coating 脆性涂层 brittle creep 脆性蠕变 brittle fracture 脆裂 brittle material 脆性材料 brittle strength 抗脆裂强度 brittleness 脆性 broken line 折线 brownian motion 布朗运动 brunt vaisala frequency 布伦特韦伊塞拉频率 bubble ⽓泡 bubble center ⽓泡中⼼ bubble cloud ⽓泡云 bubble density ⽓泡密度 bubble domain 泡畴 bubble flow 泡状流 bubble formation ⽓泡形成 bubble of turbulence 湍联 bubble pressure 泡压 bubbling ⽓泡形成 bubbling fluidized bed ⿎泡怜床 bucket 叶⽚ buckingham potential 伯⾦汉姆势 buckling 屈曲 buckling behavior 翘曲⾏为 buckling coefficient 屈曲系数 buckling load 屈曲负载 buckling of plate 板的翘曲 buckling of shell 壳的皱损 buckling strength 抗屈曲强度 buckling stress 屈曲应⼒ buckling test 纵弯试验 buffer 缓冲器减震器 buffer action 缓冲酌 buffer beam 缓冲梁 buffer solution 缓冲溶液 buffer spring 缓冲弹簧 buffeting 扰炼震 built in arch 固定拱 bulge 隆起 bulk acceleration 牵连加速度 bulk forces 体积⼒ bulk modulus 体积弹性横量 bulk modulus of elasticity 体积弹性横量 bulk motion 牵连运动 bulk potential 体积势 bulk resonance 体积共振 bulk scattering 体积散射 bulk strain 体积应变 bulk temperature 总体温度 bulk velocity 牵连速度 bulk viscosity 体积粘度 buoyancy 浮⼒ buoyant frequency 浮⼒频率 burgers material 伯格斯材料 burning 燃烧 burning load 燃烧负荷 burning point 燃点 burning temperature 燃点 burning velocity 燃烧速度 bursting 爆裂 bursting pressure 爆炸压⼒ bursting strength 破裂强度 bursting stress 破裂应⼒ bursting test 爆破试验 busemann relation 布泽曼关系式。
高级太阳能天线和信号技术手册说明书
IndexAAccess control points(ACPs),216,218 Advanced concept solar,32 Annealing,123,128,133Antenna arrayscosts,201Fresnel diffraction zone,203narrowband,203Antennas and signalsDDs,209,211decoupling,213phase center,208pulse repetition rate,209radio wave scanning image,212snail type,209,210stroboscopic oscilloscope,207,208USB-to-COM converter,210UWB antenna,207UWB pulses,211UWB signal,212UWB tomography,210,213VSWR,209Atomic force microscopy(AFM),129 Atomic layer epitaxy(ALE),96Auger processes,5Axial junction devices,23BBack-end-of-line(BEOL)metallization,58 Backward wave oscillators(BWO),194 Bandgaps/energy levels,11Bessel function,175Bipolar operational biasing schemes,83 Blended heterostructures,6Bovine serum albumin(BSA),152 Broadband solar spectrum,11BSIM-CMG SPICE Model,63–64 BULKMOD parameter,63Bulk-phase metal(MNP),159Bulk tri-gatefinFET device,45CC-AFM tip-sample system,76Channel-length modulation(CLM),39,54 Charge components,43Circular polarization of electroluminescence, 136Classical light-trapping limit,20CMOS logic gate,48Commercial MOSFET,38Common multiple-gate model,63 Conductive atomic force microscopy(C-AFM),76Conductivefilament(CF),73,81 Conductivity,147Core-shell junction,23Corner effects,52Curie temperature,120,126,127,137 channel thickness,124experimental data,124GaMnAsfilms,121GaMnAs samples,123hole concentration,122manganese concentration,122Mn impurity,125power law,124Czochralskiflux method,127©Springer International Publishing AG,part of Springer Nature2018S.M.Goodnick et al.(eds.),Semiconductor Nanotechnology,Nanostructure Scienceand Technology,https:///10.1007/978-3-319-91896-9229DDecay rate vs.plasmon excitationwavelength,156Decay rate vs.wavelength resonance,158 Delayed dissipation,162Detailed balance,9material bandgap,9quasi-Fermi energies,10semiconductor absorber,10 Dielectric barrier limiting,87Dielectric constantfree space,44,67silicon dioxide,44Diffraction-limited optics,21Diffraction tomography,200Diluted magnetic semiconductor(DMS),118,128Directivity diagrams(DDs),209Double-barrier heterostructures,30Dye-sensitized solar cell architecture,8 Dye-sensitized solar cells(DSSC),14,159 architecture,18evolution,19liquid electrolyte approach,18 Dynamic random access memories(DRAM),71EEigenvalue,63Electric and magnetic polarizabilities,182 Electricfield vector,184 Electromagnetic radiation,199,203,219 Electron-hole pair(EHP),3,11Electron kinetic energy,28Electron-phonon scattering,27Electron-phonon system,30 Ellipsometry light,101Employing monostatic radiometrymethods,210Epitaxy,96,127External quantum efficiency(EQE),110FFabrication,95–96,100extra metal layer(METAL0),57local interconnect layer,58–59middle-of-line(MOL),58mobility engineering,60Fabry–Perot resonances,170Faraday configuration,125Faraday rotation angle,126,135Ferromagnetic NiFe nanowires,125 Ferromagnetic semiconductors,118,134–137 Ferromagnetism,123,136,137Fiber-optic communication,135Field effectcapacitance Cox,51,62high-κmetal-gate(HKMG),55Field-effect transistors(FETs),95Field transistors(spin-FED),135Filament-based mechanism,72Filament-based metal-oxide RRAMschemes,72Fill factor(FF),5FinFET characteristics,45FinFET devicesI OFF current,64I ON drive,64mobility,64quantized width,65scalability,64SOC technology,65FinFET geometry,45FinFET NAND2gate,59FinFET transistor,39,54accumulation mode,41bulk substrate,45depletion mode,41double-gate transistor,53drive current I ON,54inversion mode,42I-V characteristics,45localized overheating,pinch-off,39,54resistive capacitor plate,49siliconfin,45,46SOI substrate,45,63threshold voltage,39triple-gate transistor,45Finite-difference time-domain(FDTD)simulation,22Focusingaperture synthesis,206Green’s function,205group focusing approach,207location sounding,207method,206monochromatic radiation,205normal projection,206plane-wave decomposition,205procedure,206radio image,206radio wave tomosynthesis,206spatial frequency spectrum,205 Forming process,78230IndexFourier transform,148Free space technique,190Fresnel zone,203,221,224Front-end-of-line(FEOL),58FTIR spectroscopy,106GGaFeAs layers,129Gallium arsenide,ironantiferromagnetic properties,127beryllium,134diffusion,131ferromagneticfilms,133ferromagnetic ordering,134ferromagnetic properties,127,128,136 heterostructure,132hole concentration,129implantation and diffusion,129magnetoelectric interaction,134microclusters,127monocrystals,127,132ohmic layers,128structures,133vapor-phase epitaxy,127GaMnAs epitaxial layers,121GaMnAsfilmscurie temperature,123DMS properties,119doping conditions,120ferromagnetic properties,119ferromagnetism,120magnetic anisotropy,125magnetic domain walls,125magnetic homogeneity,126magnetotransport properties,125MBE technique,120Mn-based magnetic inclusions,119p–d exchange,125production,120–121temperature of the structures,126 Geometric characteristics,55Gigahertz frequencies,171Glass-coated microwire,174Gold nanoparticles(AuNP),152mechanismelectrostatic interactions,152non-covalent binding,152non-spontaneous binding,152 nanoparticle-molecule conjugation,152–156,158Ted Pella tool,153Google and the British pharmaceuticalcompany,95Gradual-channel approximation(GCA),43,45,52Gradual-channel conditions,49–53 Grain boundariesbarriers,80conductivity,78electrical transport,77filament growth,81MIM devices,79oxygen vacancy,77polycrystallinefilms,81RRAM switching,81TAT,77Green functionHelmholtz equation,151HHafnia,77–80Hall method,123Hamiltonian algorithm,161 Harmonic oscillator,159Hf-O bond breakage,89HfO2-based RRAM system,72HfO2dielectricfilm,76HfO2dielectric leading,79HfOx-based RRAM device,81HfOx-based system,86HfOxfilm,84Hole concentration,120,122–126Hot-carrier solar cells,29Hybrid GaAs/Fe structures,129 Hybrid organic-inorganic perovskitematerials,8Hybrid perovskite structures,114 Hybrid solar cell technology,114 Hydride vapor-phase epitaxy,128IImmunosensors,ELISA,154 Inhomogeneities,180Inorganic precursor materials,98 Instantaneous dissipation,162IntelIvy Bridge processor,38,39,454004microprocessor,38Xeon processor,38Interlayer exchange coupling(IEC),132,133Intermediate-band(IB)solar cell,12 Isotropic dielectric functions,153I-V characteristics,52Index231KKerr effect,125Kinetic energy,25Korean Research Institute of ChemicalTechnology(KRICT),8LLattice temperature,32Layoutcritical dimension(CD),55fin pitch,56litho-friendly,55,57NAND2standard cell,60optical proximity correction(OPC),57parasitic capacitance,resistance,65self-aligned double patterning(SADP),56Synopsys Custom Designer,60Light-emitting diodes(spin-LED),135,136 Light scattering,153Light trapping,22Liouville equation,molecular density matrix,161 Litho-friendly layout,57Localized plasmon resonance,146 Localized surface plasmons(LSP),146 Lorentz gauge condition,151Low-temperature vapor-phase epitaxy,128LT-MBE technique,120MMagnetic anisotropy,126Magnetic domain walls(MDW),125 Magnetic impurities,118,136Magneto-optical materials,135,137 Magnetoresistance effect(GMR),118 Markov approximation,time-correlationfunctions,163Material conductivity,182Mathematical OR model,188 Mathematical simulation,174Maxwell’s equations,22,147METAL0line,59METAL0segment,59Metal-insulator-metal(MIM)structure,73 Metal-oxide-basedfilament-type RRAM,72 Microactuator,135,137Microferroics,134Microwire application,174Microwire material,173Microwire production technology,179 Microwires,181Microwires possessing magnetic properties,179Mie theory,149,153MLEfield-effect transistors(MLE-FETs),106–107MLE organic light-emitting diodes(MLE-OLEDs),108Modern telecommunication systems,135 Molecular beam epitaxy(MBE),15 Molecular layer epitaxy(MLE),97charge transfer(CT)band,104chemical approach,100component,109device application scope,111direct manual operation,98feature,106,112generation,98hybrid materials,113hybrid perovskites solar cell device,114laser media,109measurement setup,110method,97MLE monolayer-by-monolayer growth,103 NTCDA and DAH precursors,102NTCDA molecules,110NTCDI,101,104,106NTCDI-based structures,100NTCDI-HM system,103OD sensitivity,103organic superlattices,103,105,107,113photovoltaic properties,109precursor materials,112principles,97pyramidal growth,105reactor setup,97setup,98size-dependent effects,106structure,103,109superlattices,103surface chemistry,98,99template layer,99Molecular nanoelectronicsdevice application,96epitaxy,96FET system,95HOMO-LUMO,94mechanisms,95modern times,95OLEDs,94progress,94situation,94transport models,94wet and vacuum methods,95 Monocrystalline material,121Monte Carlo simulation,27,30,31232IndexMoore,Gordonchemical engineering,37Moore’s Law,39,48Moore’s law,48Multiexciton generation,24–29 Multiple exciton generation(MEG),25 Multiple-patterning photolithographymethods,57NNAND2standard cell,60 Nanocomposite,17Nanomaterialsfeature,14nanowire,15QWs,15Nanoparticles(NP)analyte molecules,146bulk semiconductors,146typesmetallic,153plasmonic,147 Nanosensors,146antibody-antigen binding,152molecule-nanoparticle charge,152photonic materials,152 Nanostructured materials,21,146 Nanosystems,159Nanowire(NW)solar cellsCMOS technology,23geometry and composition,22performance,23photonic bandgap materials,23property,22Nanowires,15–17Nanowire transistor,46effective width,52fully depleted,43,47nanoscale sensor,44SNWFET,40,42–44thickness t nw,40wrap-around gate,42 Naphthalenetetracarboxylic-dianhydride(NTCDA)precursor,100 National Renewal Energy Laboratory(NREL),6Natural Screening Length,61–63Non-destructive testing,199,219,225 Nonequilibrium distribution,28 Nonequilibrium hot-phonon effects,30 Nonplanar devicedevice length L,39,48,63device width W eff,64finFET,52nanowire transistor,44Non-plasmonic materials,146n-type gradual-channelfinFET,51OObjects and radio imagesACPs,216back view,217cross sections,215detecting and visualizing,2183D tomogram,214luggage inspection,213millimeter frequency range,217radiopaque,214reinforcing elements,215sounded area,218tomosynthesis,213transceiver antenna module,213UWB antennas,217UWB scanner,214UWB tomogram,213wooden latches,214Ohm’s Lawdrift velocity,48microscopic form,48mobilityμn,54transit time,48Onsager-Lax quantum regression theorem,161 Opaque media,204Open radio wave resonator,171Open resonator,170,184,188,191application,171characteristics,181glass-coated microwire,174magnetic microwire,179measurements,190microwires,179,181quality,171spherical objects,183superthin wire,173–180Optical density(OD),103Optical performance,19–22Optical proximity correction(OPC),57 Organic-inorganic superlattices,113Organic light-emitting diodes(OLEDs),94 Organic multiple quantum well(OMQW)energy levels,106Organic superlattices,103–105size-dependent effects,105spectroscopic and polarization response,105Index233Organic thin-film solar cells,6 Oxygen exchange layers(OEL),79,82 Oxygen vacancy asymmetry,84 Oxygen vacancy concentration,88PParktronic systems,219Photo-enhanced magnetization,135 Photolithography,57Photonic bandgap materials,21 Photovoltaicsadvantages,14AFM techniques,13Auger processes,5bandgap material,9device,2diode,5disadvantages,14energy conversion,2excitonic effects,8excitons,6FF,5hybrid perovskite materials,8nanotechnology,13open-circuit voltage,5organic thin-film solar cells,6performance,6photocurrent,4principal,2Si cell design,4solar cell efficiency records,7solar cells,3–5solar spectrum,3,4technologies,6Pinched-off channel conditions,53–55 Plasmonic materials,LSP,146 Plasmonic sensors,164Plasmon resonance(PR)sensorsauxiliaryfields,147,148Green function,151Helmholtz equation,151Lorentz gauge condition,151macroscopicfields,147,148macroscopic polarization,149Mie theory,149,150Plot absorbance spectroscopy,154 Poisson-Laplace equation,150 Poisson’s equation,41,43–45,49,62 cylindrical coordinates,43French mathematician,45rectangular coordinates,61transformed usingλ,62Power transmission and reflectioncoefficients,191Process-specific parameters,62Pseudo-epitaxy,96Pyrolysis,17QQ-factor,189QualitativefinFET behavior,52Quantum dots,16,17Quantum efficiency,25Quantum-mechanical effects(QMEs),41 Schrödinger’s equation,63volume inversion,41Quantum theory of relaxation,162 Quantum well(QW),15,118Quasi-optical open resonator,171–173 concave mirrors,172Q-factor,173quality factor,172Quasi-optical resonator methods,195RRadio electronics,169Radio image,206,207,213–217Radio wave parameters,169Radio wave tomography,201,205,207,213, 219,223antenna arrays(see Antenna arrays)antennas and signals(see Antennas andsignals)diffraction tomography,200electromagnetic radiation,199embedded inhomogeneities,199focusing(see Focusing)ionizing X-rays,200layer-by-layer structure,199microwave passenger inspectionsystems,200model of RADIOVISION,201,202model of Raptor-1600Scanner,202model of Smiths Heimann,201multiple integral projections,199non-destructive testing,199objects and radio images(see Objects and radio images)radiolocation,199SafeScout100scanner,200security system,200semitransparent media,199tomographic imaging,201234Indextomosynthesis of radio waves,225ultrasonic(see Ultrasonic)ultrasonic radiation(see Ultrasonicradiation)UWB,201Radiolocation,199Radiopaque,204,214,219Raman transition,159Rayleigh scattering,4,160Reduced density matrix(RDM),162 Refractive index–density diagram,224 Resistance change behavior,73Resistive alloy,181Resistive random access memory(RRAM),71 bipolar metal-oxide,87CF formation,73characteristic,72device,84element,74HfO2,72HfO2-based RRAM,72HfO2GB properties,76HRS and LRS,90LRS and HRS states,73metal-oxidefilament-based type,72OEL,83operation,84oxygen vacancy profile,86Resonant frequency shift,183Resonator Q-factor,173Robust switching,82Rule of thumbchannel length L,48channel length L>3λ,62drive current I ON,54fin crossing ACTIVE,58METAL0crossingfins,60multiple-patterning lithography,57nonplanar effective width W eff,52output of static CMOS cell,61process refinements,55quantized effective width W eff,65shorten screening lengthλ,62speed dependence on length L,643Âwidth in same area,59SSaturation,53Schrödinger equation,146Schrödinger’s wave-mechanical equation,41 Secondary-ion mass spectrometry(SIMS),127 Second harmonic generation(SHG),105Self-aligned double patterning(SADP),56 Semiconductor matrix,137 Semiconductors,118Semiconductor spintronics,133 Sensitivity,192Shockley-Queisser efficiency,10Shockley-Queisser(SQ)limit,10,11,23,29 Short-channel effects(SCEs),38,62channel-length modulation,39drain-induced barrier lowering(DIBL),66 subthreshold conduction and swing,39threshold voltage roll-off,39Short-channel FinFETs,61–65Short-channel transistor,38Short-circuit current,5Silicon nanowire(SNW),40Silicon solar cell technology,6Si solar cell,4Small spherical objectselectric diameter,182SNWFET,42Solar cells,3Source-drain depletion regions,40Space charge region,3Spherical aerogels,171,183,184SPICE modelsBSIM-CMG Level72model,49BSIM-IMG model,45,53,64BULKMOD parameter,63classic Level1model,49EPSRSUB parameter,45GCA core model,52GEOMOD parameter,63NFIN parameter,64predictive technology model(PTM),67TMASK parameter,53U0parameter,54Spin-dependent phenomena,134Spin electronics,118Spin light-emitting diodes,136Spin-polarized charge carriers,134 Spintronics,118Spline interpolation,156s-polarized light,102Standard-cell layout,59Steep permittivity gradients,204Storage class memory(SCM),71Stransky-Krastinov growth process,17 Superthin wire,174,177,178Bessel function,175microwire,173OR,180resistive alloy,181Index235Superthin wire(cont.)segments,180superthin wire,174Surface-enhanced Raman resonance(SERS) MNP,159nanosystems,159photovoltaic devices,159plasmonic sensors,146Surface plasmon polariton modes,22 Surface plasmon resonance(SPR),152 Surface potentialΦs,43,44Surface prefunctionalization,102Synopsys Custom Designer,60Synopsys Sentaurus Device,52TTandem solar cells,8,11Teflon,223Terahertz frequency,171,194 Thermalization,11Thermodynamically nonequilibriummethod,120Thinfilm technologies,6 Tomosynthesis,206,213,215,225 Traditional planar MOSFET,39 Transistor,40–45Transmission electron microscopy(TEM),129 Tri-gatefinFET,53Tungsten(W),58Tunnel magnetoresistance(TMR),118UUlitovsky–Tailor method,173Ultrahigh vacuum(UHV),96Ultrasonicacousticfield,222acoustic radiation,219blurred of course,221density contrasts,219gun in air,221immersion liquids,219measurements,222non-destructive testing,219object scanning,220single-frequency sounding,220sonar demo setup,223sonar for contactless,222sounding systems,222sounding techniques,219ultrasound in location,221wave equations,219Ultrasonic radiationaverage operating wavelength,224dielectric objects,223electrophysical properties,223false-color combined image,224fluoroplastic,223hidden object,224metallized grid,225ultrasound frequency,223Ultraviolet(UV)lithography,13Ultra-wideband(UWB),201,203,204,206–214,217,223,225 Uniaxial magnetic anisotropy(UMA),133 Uniform channel,46–48UV-Vis absorbance spectroscopy,153,154VVacuum methods,96Vapor-liquid-solid(VLS),15,16Vector network analyzers(VNA),194 Voltage standing wave ratio(VSWR),209WWave projectionsanalysis of scattered radiation,204aperture synthesis,203dominant mechanisms,204electromagnetic radiation,203immersion liquids,203inverse problem,204multi-angle,204opaque media,204radio-frequency holography,203steep permittivity gradients,204ultrasonic sounding system,203 Wave tomography,226Wave vision,see Radio wave tomography Wet and vacuum methods,96XX-ray magnetic circular dichroism,125X-ray photoelectron spectroscopy,136ZZener theory,124236Index。
物理学单词表(PDF)
Aa.c. generator 交流发电机aberration 光行差,像差absolute index of refraction绝对折射率absolute refractive index 绝对折射率absolute temperature scale 绝对温标absolute zero 绝对零度absorber 吸收体absorbing power 吸收能力,吸收本领absorptance 吸收比absorption 吸收absorption coefficient 吸收系数absorption line 吸收谱线absorption spectrum 吸收光谱,吸收谱accelerate 加速acceleration 加速度acceleration due to gravity 重力加速度acceleration-time graph 加速度—时间关系线图accelerator 加速器acceptor 接受体acceptor doping 受体掺杂acceptor impurity 受体杂质accommodation 调节,视觉调节accumulator 蓄电池accuracy 准确度acetate strip 醋酸酯条片achromatic 消色差的achromatic aberration 消色差achromatic condenser 消色差聚光透镜achromatic light 消色差光,白光acoustic blur 声响模糊acoustic board 吸音板,吸声板acoustic navigation 声响导航acoustic pressure 声压acoustics 声学act on 施于action 作用量,作用,作用力action of point 尖端作用activation 激活,活化activation energy 激活能,活化能active nucleus 活性核,放射性核activity 放射强度,放射性adapter 接合器满分网()更多学习资料请访问:/thread-14350-1-1.htmladder 加法器adhesion 附着力,附着,黏附adhesive force 附着力adiabatic 绝热的adiabatic expansion 绝热膨胀adiabatic process 绝热过程aerial 天线aerial induction 天线调谐电感aerial network 天线网络aerodynamic force 气动力,空气动力aerodynamics 气体动力学,空气动力学aerofoil 机翼agent 剂air blower 吹风器air column 空气柱,气柱air cushion 气垫air damping 空气阻尼air film 气膜air track 气垫导航air wedge 气楔alignment 对准,校整alpha decay α衰变alpha particle α粒子alpha particle scatteringanalogue α粒子放射模拟alternating current 交流电alternating voltage 交变电压,交流电压alternator 交流发电机altimeter 高度计,测高仪americiumammeter 安培计amorphous 非结晶的,无定形的ampere 安培,安ampere-hour 安培小时,安时amplification 放大,放大率amplifier 放大器amplify 放大amplitude 振幅amplitude modulation 调幅,振幅调剂amyl acetate 醋酸戊酯anaemia 贫血analogue 模拟analogue experiment 模拟实验analogue signal 仿真讯号,非数字讯号analogue-to-digital conversion 模拟转换满分网()更多学习资料请访问:/thread-14350-1-1.htmlanalyser 检偏振器AND gate 「与」门anemometer 风速计aneroid barometer 无液气压计,空盒气压计angle of contact 接触角angle of deviation 偏向角angle of diffraction 衍射角,绕射角angle of dip 倾角angle of elevation 仰角angle of emergence 出射角angle of incidence 入射角angle of inclination 倾角angle of minimum deviation最小偏向角angle of projection 投射角angle of reflection 反射角angle of refraction 折射角angle of twist 扭转角angstrom 埃angular acceleration 角加速度angular aperture 孔径张角angular displacement 角位移angular frequency 角频率angular impulse 角冲量angular magnification 角度放大,角放大率angular momentum 角动量,动量矩angular motion 角向运动,角运动angular seed 角速率angular velocity 角速度angular width 角宽度annealing 退火,韧化anode 阳极,正极anomalous expansion 反常膨胀antenna 天线anticlockwise moment 逆时针力矩antifreeze 防冻剂antinodal line 腹线antinode 波腹antiparticle 反粒子antiphase 反相,逆相aperture 孔径,口径,孔apparent depth 视深apparent expansion 表观膨胀,视膨胀apparent frequency 表观频率,视频率apparent loss in weight 表观失重满分网()更多学习资料请访问:/thread-14350-1-1.htmlapparent weight 表观重量Appleton layer 阿普顿层,F 电离层aqueous layer 水层Archimedes' principle 阿基米得原理area 面积argon 氩armature 电枢artificial disintegration 人工蜕变artificial radioactivity 人工放射astable 非稳态的astable circuit 非稳态电路astable multivibrator 非态多谐振荡器astigmatism 像散,散光astronomical telescope 天文望远镜at infinity 在无穷远处at rest 静止atmosphere 大气,大气层,大气压atmospheric pressure 大气压强atom 原子atomic bomb 原子弹atomic bond 原子键atomic density 原子密度atomic diameter 原子直径atomic energy 原子能atomic mass 原子质量atomic mass unit 原子质量单位atomic model 原子模型atomic nucleus 原子核atomic number 原子序数atomic radius 原子半径atomic separation 原子间距atomic spacing 原子间距atomic structure 原子结构atomic theory 原子论atomizer 喷雾器attenuation 衰减attraction 吸引attractive force 吸力audible frequency range 听频范围audible signal 可听讯号audio frequency 声频autofocus 自动聚焦,自动对焦avalanche 电子雪崩average acceleration 平均加速度满分网()更多学习资料请访问:/threa d-14350-1-1.htmlaverage power 平均功率average speed 平均速率average velocity 平均速度Avogadro constant 阿佛加德罗常数,阿佛加德罗常量Avogadro number 阿佛加德罗数Avogadro's law 阿佛加德罗定律axial 轴向的,沿轴的axial field 轴向场axial search coil 轴向探察线图axis 轴axis of rotation 转轴Bback e.m.f. 反电动势background radiation 本底辐射Bainbridge massspectrometer 班布里奇质谱仪balance 天平,秤,平衡balance arm 秤杆,平衡臂balance point 平衡点balance bridge 平衡电桥balanced force 平衡力ball bearing 球轴承,滚珠轴承ballistic galvanometer 冲击电流计,冲击检流计ballistic pendulum 冲击摆Balmer series 巴耳末系,巴耳末光谱band spectrum 带状光谱,带状谱bandwidth 带宽bar code 条形码bar magnet 磁棒bare wire 裸线barium 钡barometer 气压计barrier 障碍物barrier layer 阻档层,耗尽层barrier potential difference 阻档层电势差,阻档层电位差Barton's pendulums 巴尔通摆base 基极base current 基极电流battery 电池组battery charger 电池充电器battery holder 电池座beaker 烧杯beam splitter 分束器,射束分离器满分网()更多学习资料请访问:/thread-14350-1-1.htmlbeat 拍beat frequency 拍频becquerel 贝克勒耳,贝克bel 贝尔,贝bell jar 钟形罩bench mat 实验台垫Bernoulli's theorem 伯努利定律beryllium 铍beta decay β衰变beta particle β粒子biasing circuit 偏压电路biasing voltage 偏压biconcave lens 双凹透镜biconvex lens 双凸透镜bicycle dynamo 自行车发电机,脚踏车发电机bifilar pendulum 双线摆bifocal lens 双焦距透镜big bang model 大爆炸模型bimetallic strip 双层金属片,双金属片binary adder 二进加法器binary system 二进制binding 结合binding energy 结合能binoculars 双筒望远镜Biot-Savart law 毕奥—萨伐尔定律bipolar 双极的birefraction 双折射bistable 双稳态的,双稳器bistable circuit 双稳电路bistable multivibrator 双稳态多谐振荡器bit 二进制制,位black body radiation 黑体辐射block and tackle 滑轮组block diagram 方框图blocking capacitor 隔直流电器容blooming 敷霜,表面加膜Bohr atom 玻尔原子Bohr radius 玻尔半径Bohr theory 玻尔理论boil 沸腾,煮沸boiler 锅炉boiling point 沸点bolometer 辐射热计Boltzmann constant 玻耳兹曼常数,玻耳兹曼常量满分网()更多学习资料请访问:/threa d-14350-1-1.html bombardment 轰击bond energy 键能bonding 键合Bourdon gauge 布尔登气压计bow wave 弓形波,舷波Boyle's law 博伊尔定律Brackett series 布喇开系,布喇开光谱Bragg angle 布喇格角Bragg diffraction 布喇格衍射,布喇格绕射Bragg plane 布喇格平面Bragg's law 布喇格定律brake 制动器breakdown potential 击穿电势,击穿电位breaking point 断点breaking strength 抗断强度breaking stress 致断应力breeder reactor 增殖反应堆bremsstrahlung 轫致辐射Brewster's law 布鲁斯特定律bridge circuit 桥式电路bridge rectifier 桥式整流器bright fringe 亮纹brightness 亮度brittle 脆的,易碎的bromine 溴Brownian movement 布朗运动brush 电刷bubble chamber 气泡室bubble raft model 泡筏模型buffer 缓冲器buffer circuit 缓冲电路bulk modulus 体积弹性模量Bunsen burner 本生灯buoyancy 浮力burette 滴定管burette stand 滴定管架burglar alarm 防盗警报器,防盗警钟buzzer 蜂鸣器by-pass 旁路byte 二进制组,字节Ccable 电缆cadmium sulphide 硫化镉满分网()更多学习资料请访问:/thread-14350-1-1.htmlcaesium 铯calcite 方解石calibrate 校准,标上刻度calipers 测径器,卡钳calorie 卡路里,卡calorimeter 量热器camera 照相机cancer cell 癌细胞candela 坎德拉cantilever 悬臂capacitance 电容capacitance substitution box换值电容箱capacitive circuit 电容电路capacitive component 电容性分量capacitive coupling 电容耦合capacitive discharge 电容性放电capacitive reactance 容抗capacitor 电容器capacitor-input filter 电容输入滤波器capacity 容量,载量capillarity 毛细现象,毛细作用capillary depression 毛细下降capillary rise 毛细上升capillary tube 毛细管capsule 囊capture 俘获carbon 碳carbon granule 碳颗粒carbon paper disc 圆形碳纸carbon-14 dating 碳14 年代测定法carburettor 化油器,汽化器carrier wave 载波carry 进位castor oil 蓖麻油cataract 白内障cathode 阴极,负极cathode ray 阴极射线cathode ray deflection tube 阴极射线偏转管cathode-ray oscilloscope 阴极射线示波器,示波器cathode-ray tube 阴极射线管cavity resonator 空腔共振器celestial telescope 天体望远镜cell 电池,细胞Celsius temperature scale 摄氏温标满分网()更多学习资料请访问:/threa d-14350-1-1.html centimetre 厘米centralized low voltage power supply unit 中央控制低压电源箱centre of curvature 曲率中心centre of gravity 重心centre of mass 质心centre of oscillation 振荡中心centre-tapped transformer 中心抽头变压器centrifugal force 离心力centrifuge 离心机centripetal acceleration 向心加速度centripetal force 向心力Chadwick 查德威克chain reaction 连锁反应change of state 物态变化change-over switch 换向开关characteristic 特性,特征characteristic curve 特性曲线characteristic line 特征线,特征谱characteristic spectrum 特征光谱,特征谱charge 电荷,充电,起电charge carrier 载荷子charge conservation 电荷守恒charge density 电荷密度charge distribution 电荷分布charge to mass ratio 荷质比charged particle 带电粒子charging by contact 接触起电charging by friction 摩擦生电charging by induction 感应起电charging by sharing 授受起电charging time constant 充电时间常数,充电时间常量Charles's law 查理定律choke 扼流,抗流,扼流圈,抗流圈choke circuit 扼流电路,抗流电路chromatic aberration 色差chromatic dispersion 色散cinefilm soundtrack 电影胶片声迹circle of least confusion 最少模糊圈,明晰圈circuit 电路circuit board 电路板circuit breaker 断路器circuit symbol 电路符号circular coil 环形线圈circular motion 圆周运动满分网()更多学习资料请访问:/thread-14350-1-1.htmlcircular orbit 圆周轨道circular pulse 圆形脉冲circular wave 圆形波circular wavefront 圆形波阵面,圆形波前clamp 夹钳,夹紧clap-echo method 「拍掌—回声」法cleave 裂开clinical thermometer 体温计clip 夹子clockwise moment 顺时针力矩closed circuit 闭合电路closed pipe 闭管closed tube 闭管closed-loop control system 死循环控制系统closed-loop gain 死循环增益closed-loop voltage gain 死循环电压增益closely packed 密堆积的cloud chamber 云室cloud chamber track 云室径迹coaxial 共轴,同轴coaxial cable 同轴电缆,同轴cobalt 钴code 编码coder 编码器coefficient of dynamic friction 动摩擦系数coefficient of friction 摩擦系数coefficient of restitution 恢复系数coefficient of static friction 静摩擦系数coefficient of viscosity 黏滞系数coherent 相干的cohesion 内聚力,内聚cohesive force 内聚力coil 线圈collector 集电极,集极collector current 集电极电流,集极电流collimator 准直管,准直仪collision 碰撞colour 颜色colour code 色码,色标combinational logic 组合逻辑common emitter 共发射极common-mode voltage 共模电压commutator 换向器compass 指南针,罗盘满分网()更多学习资料请访问:/threa d-14350-1-1.html complete circuit 完整电路component 组件,分量,组分component of force 分力compound microscope 复式显微镜compound pendulum 复摆compressed gas 压缩气体compressibility 可压缩性,压缩系数,压缩率compressible fluid 可压缩性流体compression 密部,压缩compression spring balance压缩弹簧天平concave 凹concave lens 凹透镜concave mirror 凹镜,凹面镜concentric capacitor 同心电容器condensation 凝结,凝聚condensation nucleus 凝结核,凝聚核condensation point 凝点,凝结点condenser 聚光器,电容器,冷凝器conductance 电导conductivity 传导性,传导率conductor 导体conical pendulum 锥摆conjugate foci 共轭焦点conservation of angularmomentum 角动量守恒conversation of charge 电荷守恒conservation of energy 能量守恒conservation of mechanicalenergy 机械能守恒conservation of momentum动量守恒conservative force 守恒力,保守力conserved 守恒constant acceleration 恒加速度constant angular acceleration恒角加速度constant angular velocity 恒角速度constant force 恒力constant motion 恒速运动constant pressure 定压constant speed 恒速率constant temperature 定温constant velocity 恒速度constant volume 定容constant volume gasthermometer 定容气体温度计constantan 康铜constriction 颈缩constructive interference 相长干涉满分网()更多学习资料请访问:/thread-14350-1-1.htmlcontact angle 接触角contact area 接触面积contact force 接触力continuity equation 连续性方程continuous spectrum 连续光谱,连续谱continuous wave 连续波contract 收缩control experiment 对照实验,比对实验control grid 控制栅极control rod 控制棒control system 控制系统convection 对流converge 会聚converging lens 会聚透镜converging mirror 会聚镜convex 凸convex lens 凸透镜convex mirror 凸镜,凸面镜coolant 冷却剂cooling by evaporation 蒸发致冷cooling correction 冷却修正cooling curve 冷却曲线cooling effect 冷却效应cooling system 冷却系统,散热系统coplanar forces 共面力core 心,核心Coriolis force 科里奥利力corkscrew rule 螺旋法则cornea 角膜corona discharge 电晕放电corpuscular theory of light 光的微粒学说correction 矫正,修正cosmic radiation 宇宙辐射coulomb 库伦Coulomb's law 库伦定律count rate 计数率counter 计数器counter weight 平衡锤,配重couple 力偶coupled oscillation 耦合振荡coupling 耦合covalent bond 共价键crane magnet 起重磁铁creep 蠕变满分网()更多学习资料请访问:/thread-14350-1-1.htmlcrest 波峰critical angle 临界角critical damping 临界阻尼critical mass 临界质量critical point 临界点critical temperature 临界温度critical velocity 临界速度crocodile clip 鳄鱼夹cross hairs 十字丝,叉丝cross-sectional area 截面积Crova's disc 克罗瓦盘crystal 晶体crystal diffraction 晶体衍射,晶体绕射crystal lattice 晶体点阵,晶体格子,晶格crystal planes 晶面crystalline 结晶的crystallization 结晶crystallography 晶体学cubical expansivity 体积膨胀系数,体积膨胀率curie 居里current 电流current amplification 电流放大current amplification factor 电流放大因素current amplifier 电流放大器current balance 电流天平current density 电流密度current gain 电流增益current intensity 电流强度current pulse 电流脉冲current sensitivity 电流灵敏度current stabilizer 稳流器current transfer characteristic电流转移特性current-carrying conductor 载电流导体current-voltage characteristiccurve 电流—电压特性曲线curved mirror 曲面镜cyclotron 回旋加速器cylindrical concave lens 柱面凹透镜cylindrical concave mirror 柱面凹镜cylindrical convex lens 柱面凸透镜cylindrical convex mirror 柱面凸镜cylindrical lens 柱面透镜cylindrical mirror 柱面镜满分网()更多学习资料请访问:/thread-14350-1-1.htmlDd.c. generator 直流发电机d.c. motor 直流电动机Dalton's law of partial pressures 道尔顿分压定律damped harmonic motion 阻尼谐动damped harmonic oscillation 阻尼谐振damped oscillation 阻尼振荡damping 阻尼damping force 阻尼力dark fringe 暗纹data 数据dating 年代测定daughter nucleus 子核daughter nuclide 子核素de Broglie relation 德布罗意关系式de Broglie wave 德布罗意波dead time 失效时间decade capacitance box 十进电容箱decade resistance box 十进电阻箱decay 衰变decay analogue 衰变模拟decay constant 衰变常数,衰变常量decay curve 衰变曲线decay law 衰变定律decay product 衰变产物decelerate 减速deceleration 减速度decibel 分贝decode 译码,解碼decoder 译码器,译码器deflection 偏转deflection plate 偏转板deflection system 偏转系统deflection tube 偏转管deformation 形变degradation of energy 能量退降,能量递降degree 度degree Celsius 摄氏度degree of freedom 自由度demagnetization 去磁,退磁demonstration diode 演示用二极管demonstration meter 演示用电表density 密度满分网()更多学习资料请访问:/thread-14350-1-1.htmldepletion layer 耗尽层,阻挡层depth of field 景深derived quantity 导出量derived unit 导出单位destructive interference 相消干涉detection 探测detector 探测器detector of radiation 辐射探测器deuterium 氘,重氢deuteron 氘核,重氢核deviation 偏向,偏差device 装置,设计,器件diamagnetism 抗磁性diaphragm 光阑,膜片diatomic molecule 双原子分子dielectric 电介质,介电的dielectric constant 介电常数,介电常量,电容率dielectric polarization 电介质极化dielectric strength 电介质强度differential equation 微分方程differential input voltage 差动输入电压diffracted ray 衍射线,绕射线diffraction 衍射,绕射diffraction grating 衍射光栅,绕射光栅diffuse reflection 漫反射diffusion 扩散,漫射diffusion cloud chamber 扩散云室digital 数字的digital display 数字显示digital signal 数字讯号digital-to-analogueconversion 数模转换dimension 量纲,因次,维,大小dimensional analysis 量纲分析,因次分析diminished 缩小diode 二极管diode probe 二极管微波探测器dioptre 屈光度,焦度dipole 偶极子direct current 直流电direction 方向,方位direction of propagation 传播方向directly heated cathode 直热式阴极discharge 放电disintegration 蜕变满分网()更多学习资料请访问:/threa d-14350-1-1.html dislocation 位错dispersion 色散dispersive power 色散能力,色散本领,色散率displacement 位移,排量displacement can 排水罐displacement-time graph 位移—时间关系线图dissipative force 耗散力distance 距离distance-time graph 距离—时间关系线图distortion 失真,扭曲,畸变disturbance 干扰diverge 发散diverging lens 发散透镜diverging mirror 发散镜division of amplitude 振幅分割division of wavefront 波阵面分割,波前分割domain 畴,域domestic circuit 家居电路donor 给予体doped semiconductor 掺杂半导体doping 掺杂Doppler broadening 多普勒谱线增宽Doppler effect 多普勒效应Doppler shift 多普勒频移dosage 剂量dose 剂量dose rate 剂量率double pulley 双滑轮double refraction 双折射double slit 双缝double-pole-double-throwswitch 双刀双掷开关doublet 双重线drag force 阻力,曳力drift velocity 漂移速度driver circuit 驱动电路driver frequency 驱动频率driving cell 驱动电池driving force 驱动力driving mirror 行车后视镜dry battery 干电池组dry cell 干电池dual trace oscilloscope 双迹示波器ductile 延性的Dulong-Petit law 杜隆—珀替定律满分网()更多学习资料请访问:/thread-14350-1-1.htmldynamic equilibrium 动态平衡dynamic friction 动摩擦dynamic resistance 动态电阻dynamics 动力学dynamo 发电机Eearth 接地,地线earthquake waves 地震波ebonite 硬橡胶,硬质胶ebonite rod 硬橡胶棒,硬质胶棒echo 回声,回波eddy current 涡电流,涡流eddy current damping 涡流阻尼eddy current loss 涡流损耗effective mass 有效质量efficiency 效率effort 施力Einstein's mass-energyrelation 爱因斯坦质能关系式elastic collision 弹性碰撞elastic constant 弹性常数,弹性常量elastic deformation 弹性形变elastic hysteresis 弹性滞后elastic limit 弹性极限elastic strain energy 弹性应变能elasticity 弹性electric bell 电铃electric charge 电荷electric current 电流electric field 电场electric field intensity 电场强度electric field pattern 电场图形electric fire 电暖炉electric line of force 电力线electric motor 电动机electric potential 电势,电位electric power 电功率electric shock 电震electrical appliance 电器electrical conductivity 导电率electrical energy 电能electrical oscillation 电振荡electrical potential energy 电势能,电位能满分网()更多学习资料请访问:/threa d-14350-1-1.html electrical resonance 电共振electricity 电,电学electrode 电极electrolysis 电解electrolyte 电解质electrolytic 电解质的,电解的electrolytic capacitor 电解质电容器electromagnet 电磁铁,电磁体electromagnetic coil 电磁感应圈electromagnetic contact 电磁触点electromagnetic force 电磁力electromagnetic induction 电磁感应electromagnetic moment 电磁矩electromagnetic oscillation 电磁振荡electromagnetic radiation 电磁辐射electromagnetic spectrum 电磁波谱electromagnetic wave 电磁波electromagnetism 电磁学electrometer 静电计electromotive force 电动势electron 电子electron beam 电子束electron cloud 电子云electron diffraction 电子衍射,电子绕射electron drift 电子漂移electron energy level 电子能级electron gun 电子枪electron transition 电子跃迁electron tube 电子管electron-volt 电子伏特,电子伏electronics 电子学electrophorus 起电盘electroscope 验电器electrostatic bond 静电键electrostatic field apparatus静电场仪器electrostatic precipitation 静电沉淀法electrostatics 静电学element 元素,组件elliptic orbit 椭圆轨道elongation 伸长度emergent ray 出射线emission 发射emission line 发射谱线emission spectrum 发射光谱,发射谱满分网()更多学习资料请访问:/thread-14350-1-1.htmlemissivity 发射率,比辐射率emit 发射emitter 发射极,射极emitter current 发射极电流,射极电流enamelled wire 漆包线encode 编码encoder 编码器end-correction 端部修正,管口校正量end-on collision 同向碰撞,尾追碰撞energetic particle 高能粒子energy 能量,能energy band 能带energy conversion 能量转换energy conversion efficiency能量转换效率energy input 能量输入energy level 能级energy output 能量输出energy transfer 能量转移enriched uranium 浓缩铀equation of continuity 连续性方程equation of state 物态方程equation of uniformlyaccelerated motion 匀加速运动方程equatorial orbit 赤道轨道equilibrium 平衡equilibrium condition 平衡条件equilibrium spacing 平衡间距equipartition of energy 能量均分equipotential 等势的,等位的equipotential line 等势线,等位线equipotential surface 等势面,等位面equivalent capacitance 等效电容equivalent inductance 等效电感equivalent resistance 等效电阻erect 正立escape velocity 逃逸速度ether 以太,醚evacuation 抽成真空evaporation 蒸发excess pressure 超压,逾电压excitation 激发excitation energy 激发能excitation potential 激发电势,激发电位excitation voltage 激发电压excited 受激满分网()更多学习资料请访问:/thread-14350-1-1.htmlexcited energy level 受激能级excited state 受激态expansion 膨胀expansivity 膨胀系数,膨胀率exponential change 指数式改变exponential decay 指数式衰变exposure 曝光量,照射extension 伸长external force 外力external work 外功extra high tension 超高电压extra-nuclear structure 核外结构extraordinary ray 非常光线extrapolation 外推,外推法extrinsic semiconductor 含杂质半导体eyepiece 接目镜,目镜Ff-number f 数,光圈数f-stop f 制光圈far point 远点farad 法拉Faraday constant 法拉第常数,法拉第常量Faraday's law ofelectromagnetic induction 法拉第电磁感应定律fast breeder reactor 快中子增殖反应堆feedback 反馈feedback amplifier 反馈放大器feedback resistance 反馈电阻ferromagnetic substance 铁磁性物质ferromagnetism 铁磁性fictitious force 假力,伪力fidelity 保真性,保真度field coil 场线圈field effect transistor 场效应晶体管field intensity 场强field lines 场力线field magnet 场磁铁,场磁体field of view 视场,视野field strength 场强figure of merit 优值,灵敏值filament 灯丝,丝极filter capacitor 滤波电容器filter circuit 滤波电路满分网()更多学习资料请访问:/thread-14350-1-1.htmlfilter pump 滤泵final state 终态,末态final velocity 末速度fine-adjustment 微调,细调fire alarm 火警警报器,火警钟first law of thermodynamics热力学第一定律first order spectrum 第一级光谱,第一级谱fission 裂变fission reactor 裂变反应堆fixed point 定点fixed pulley 定滑轮fixed resistor 定值电阻器flat coil 扁平线圈flat solenoid 扁平螺线管flat-bottomed flask 平底烧瓶Fleming's left hand rule 弗林明左手定则Fleming's right hand rule 弗林明右手定则floating body 浮体fluid 流体fluid dynamics 流体动力学fluorescence 荧光fluorescent screen 荧光屏,荧光幕flux 通量flux density 通量密度fly-back 回扫flywheel 飞轮focal length 焦距focal plane 焦平面focus 焦点,聚焦,对焦focus control 聚焦控制follower circuit 跟随电路foot pump 脚踏泵force 力force constant 力常数,力常量force polygon 力多边形force resolution 力的分解force triangle 力三角形force-extension curve 施力—伸长关系曲线forced oscillation 受迫振荡former 框forward biased 正向偏压forward current 正向电流fossil fuel 化石燃料Foucault's rotating mirror method 傅科旋转镜法满分网()更多学习资料请访问:/thread-14350-1-1.htmlframe of reference 参考坐标系,参考系Franck-Hertz experiment 弗兰克—赫兹实验Fraunhofer diffraction 夫琅和费衍射,夫琅和费绕射Fraunhofer lines 夫琅和费谱线free electron 自由电子free fall 自由下坠,自由下落free falling body 自由落体free oscillation 自由振荡free path 自由程free space 自由空间freeze 凝固freezing point 凝固点freon 氟利昂,二氯二氟甲烷frequency 频率frequency modulation 调频,频率调制frequency response 频率响应Fresnel diffraction 菲涅耳衍射,菲涅耳绕射Fresnel's biprism 菲涅耳双棱镜friction 摩擦,摩擦力friction compensated 补偿摩擦作用frictionless motion 无摩擦运动fringe 条纹fringe pattern 条纹图形fuel rod 燃料棒fulcrum 支点full adder 全加法器full-scale deflection 满标偏转full-wave rectification 全波整流full-wave rectifier 全波整流器fundamental frequency 基频fundamental mode ofvibration 基谐振动模式fundamental note 基音fundamental quantity 基本量fundamental unit 基本单位fuse 保险丝fuse rating 保险丝额定值fusion 熔解,聚变fusion point 熔点fusion reactor 聚变反应堆GG - clamp G-形钳gain 增益满分网()更多学习资料请访问:/thread-14350-1-1.htmlgain control 增益控制galaxy 星系Galilean telescope 伽利略望远镜Galileo's thought experiment伽利略假想实验galvanometer 电流计,检流计gamma radiation 伽玛辐射gamma ray 伽玛射线gap 隙gas 气,气体gas pressure 气体强压,气压gaseous phase 气相gaseous state 气态gauge 规,计Gauss theorem 高斯定理Geiger counter 盖革计数器Geiger-Marsden scatteringexperiment 盖革—马斯登散射实验Geiger-Muller counter 盖革—弥勒计数器Geiger-Muller tube 盖革—弥勒管general gas equation 普适气体方程general gas law 普适气体定律generator 发电机genetic effect 遗传效应geometrical optics 几何光学germanium 锗ghost effect 迭影效应glancing angle 掠射角glass fibre 玻璃纤维glycerine 甘油gold foil 金箔fold leaf electroscope 金箔验电器gradient 斜率,梯度graduated cylinder 量筒Graham's law of diffusion 格拉哈姆散定律grain 粒,晶粒gramophone record 唱片,唱碟graph 图,线图,图表graphical method 图解法grating 光栅grating spectrometer 光栅光谱仪,光栅分光计gravitational acceleration 重力加速度gravitational attraction 引力,重力gravitational constant 引力常数,引力常量gravitational field 引力场,重力场gravitational force 引力,重力满分网()更多学习资料请访问:/threa d-14350-1-1.html gravitational mass 引力质量gravitational potential 引力势,重力势gravitational potentialdifference 引力势差,重力势差gravitational potential energy引力势能,重力势能gravity 重力grazing incidence 掠入射,切入射greenhouse effect 温室效应grid 栅极grid control 栅极控制grid system 电力网groove 纹道,针槽,开槽ground 接地ground state 基态guinea and featherexperiment 「硬币与羽毛」实验Hhair spring 游丝half adder 半加法器half-life 半衰期half-silvered mirror 半镀银镜half-wave rectification 半波整流half-wave rectifier 半波整流器Hall effect 霍耳效应Hall probe 霍耳探测器Hall voltage 霍耳电压hand stroboscope 手动式频闪观测器harmonic 谐音harmonic motion 谐运动harmonic oscillation 谐振荡head-on collision 对正碰撞,正碰heat 热,热量,加热,热学heat absorbent 吸热剂heat absorber 吸热器heat absorption 吸热,热吸收heat capacity 热容量heat conduction 热传导heat exchange 热交换heat flow 热流heat gain 热增益,得热heat insulation 热绝缘,隔热heat loss 热损耗,失热heat proof 耐热的,隔热的heat pump 热泵满分网()更多学习资料请访问:/thread-14350-1-1.htmlheat radiation 热辐射heat reservoir 热库,储热器heat sink 热壑heat transfer 热传递,热转移heater 发热器,加热器heating effect 热效应heating element 发热组件Helmholtz coils 亥姆霍兹线圈henry 亨利,亨hertz 赫兹,赫high dispersion prism 高色散棱镜high tension 高电压hole 空穴,空子hollow plastic lens 空心塑料透镜hollow plastic prism 空心塑料棱镜hologram 全息图holography 全息术,全息学Hooke's law 虎克定律horizontal 水平horizontal component 水平分量horizontal deflection 水平偏转horseshoe magnet 蹄形磁铁hot cathode 热阴极hour 小时Huygens' principle 惠更斯原理hydraulic press 水压机hydroelectric power 水力发电hydrogen bomb 氢弹hygrometer 湿度计hyperbolic orbit 双曲线轨道hypodermic needle 皮下注射针头hypodermic syringe 皮下注射针筒hypothesis 假说,假设hysteresis 滞后现象Iideal gas 理想气体ideal gas equation 理想气体方程ideal gas temperature scale 理想气体温标ideal machine 理想机械illuminate 照明,照亮image 像image distance 像距满分网()更多学习资料请访问:/threa d-14350-1-1.html immerse 浸没immersion heater 浸没式电热器impact 碰撞impedance 阻抗impulse 冲量impurity 杂质in focus 焦点对准in parallel 并联in phase 同相in series 串联incident ray 入射线incident wavefront 入射波阵面,入射波前inclined plane 斜面incoherent 不相干的incompressible fluid 非压缩性流体indicator 指示器indirectly heated cathode 旁热式阴极induced charge 感生电荷induced current 感生电流induced e.m.f. 感生电动势induced voltage 感生电压inducing charge 施感电荷inducing current 施感电流inductance 电感inductance capacitancecoupled circuit 感容耦合电路inductance coil 电感线圈induction 感应induction heating 感应生热inductive circuit 电感电路inductive component 电感性分量inductive reactance 感抗inductor 电感器,感应器inelastic collision 非弹性碰撞inert gas 惰性气体inertia 惯性,惯量inertia balance 惯性秤inertial frame 惯性坐标系,惯性系inertial mass 惯性质量infra-red detector 红外线探测器infra-red radiation 红外辐射infra-red ray 红外线initial state 初态initial velocity 初速度input 输入满分网()更多学习资料请访问:/thread-14350-1-1.htmlinput bias current 输入偏压电流input characteristic 输入特性input current 输入电流input offset current 输入补偿电流input power 输入功率input resistance 输入电阻input voltage 输入电压input-output voltagecharacteristic 输入—输出电压特性instantaneous acceleration 瞬时加速度。
- 1、下载文档前请自行甄别文档内容的完整性,平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益,请联系客服反馈,我们会尽快为您处理(人工客服工作时间:9:00-18:30)。
Acc. Chem. Res. 1983, 16, 363-370
363
A Qualitative Valence-Bond Approach to Organic Reactivity
ADDY PROSS* and SASON S. SHAIK* Department of Chemistry, Ben Gurion University of the Negev, Beer-Sheva, Israel Received November 12, 1982 (Revised Manuscript Received June 2, 1983)
Sophisticated molecular orbital programs that can calculate both molecular structure and reaction profiles efficiently are now readily available. As a result, the literature of the last decade abounds with such appli- cations. However, these quantitative methods do not, on their own, satisfy the chemist’s need to understand.
In order to understand a particular chemical phenom- enon, the chemist needs a simple qualitative model that may be utilized to rationalize, as well as predict, ex- perimental and computational data. For problems of molecular structure, the qualitative model is frontier molecular orbital (FMO) the0ry.l As a result, con- formational problems and questions concerning sub- stituent effects on structure, for example, are now relatively well-understood. Application of FMO theory to problems of reactivity, however, is less straightforward-this, despite the con- siderable success in explaining reactivity trends in many systems. The main problem here appears to be that within the physical organic chemistry framework, FMO theory does not clarify the mechanism of barrier for- mation nor does it lead to a qualitative description of the reaction profile. This is because the FMO approach
by its very design is not strictly suited to studying problems of reactivity. Certainly one can look at the key orbital interactions that take place as two molecules approach. But as the molecules react, old bonds are broken and new bonds are formed. As a consequence, the original orbitals undergo tremendous modification. One therefore should not expect to extrapolate too much information about the transition state of a reac- tion by a study of the frontier orbitals of reactants- both structural and electronic changes that have taken place may be too drastic. The purpose of this Account is to describe a method that attempts to overcome this difficulty by examining
the entire reaction profile of a given reaction. The
model, which we term the valence-bond configuration mixing (VBCM) m0de1,~B shows how a reaction profile can be qualitatively built up from its constituent con- figuration building blocks in precisely the same way as
atomic orbitals, or group molecular orbitals, may be utilized to build up the molecular orbitals of a mole- cule.lfg In this sense we would suggest that the VBCM model constitutes a dynamic analogue of FMO. Thus,
Addy bras received his B.Sc. and Ph.D. degrees from Sydney University. After postdoctoral positions at Klngs College, London, and the Hebrew Unlv- ersity. Jerusalem. he was appointed to the Department of Chemistry, Ben
Gurion University where he holds the posftion of Associate Professor. His current research interests Include applications of qualltative VB and MO the-
ory to mechanistic organic chemktry and the elucidation of transttiin-state structure and its eppllcation to general problems of organic reactivity. Sason S. Shak. Born Bagdad 1948. Ph.D.
1978.
University of Washing-
ton. A Fulbright Scholar In the U.S. (1974-1979). Sason Shaik is an applied theoretical chemist interested in the construction of unifying concepts for problems of structure and reactivity. His current research involves reactivity of organic molecules, organic conductors, inorganic polymers, and solid-state chemistry. Shak has been
at Ben Gurion University since 1979180 where
he
is a Senior Lecturer of Chemistry.
0001-4842/83/0116-0363$01.50/0
whereas FMO applications are most readily applied to static situations where the interacting groups are sta-
tionary with respect to one another, CM theory may be applied to dynamic situations where molecules are re- acting and, therefore, both intermolecular and intra- molecular processes are constantly changing along the reaction ~oordinate.~~~ We believe, therefore, that the VBCM approach may be usefully applied to problems of chemical reactivity and, in terms of our main interest,
organic reactivity, so that application of the theory can provide the organic chemist with a conceptual frame- work on which much of his empirical and intuitive un- derstanding may be attached. No doubt, the reader may recognize many of the principles underlying our approach. It constitutes a natural evolution of the continuing interest in the makeup of potential energy surfaces. Of particular importance is the pioneering work of Bell4” and Evans and P~lanyi~~ that defines the mechanism of barrier formation. Other contributions