8050三极管规格书
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO I C = 100μA, I E =0 40 V Collector-emitter breakdown voltage
V(BR)CEO *I C =1mA , I B =0 25 V Emitter-base breakdown voltage V(BR)EBO I E = 100μA, I C =0
6
V
Collector cut-off current I CBO V CB = 35V, I E 0 0.1 μA Collector cut-off current I CEO
V CE = 20V, I B 0 0.1 μA
h FE(1) V CE =1V, I C =5mA 45 h FE(2) V CE =1V, I C =100mA 80 300 DC current gain
h FE （3）
V CE =1V, I C =800mA 40 Collector-emitter saturation voltage V CE(sat) I C = 800mA, I B =80mA 0.5 V Base-emitter saturation voltage V BE(sat)
I C =800mA, I B = 80mA
1.2
V
Transition frequency
f T V CE =6V, I C = 20mA , f=30MHz
150 MHz
* Pulse Test : pulse width ≤ 300µs , duty cycle ≤2%.
CLASSIFICATION OF h FE(2)
Rank L H
Range
80-200 200-300