8050三极管规格书
- 1、下载文档前请自行甄别文档内容的完整性，平台不提供额外的编辑、内容补充、找答案等附加服务。
- 2、"仅部分预览"的文档,不可在线预览部分如存在完整性等问题,可反馈申请退款(可完整预览的文档不适用该条件!)。
- 3、如文档侵犯您的权益，请联系客服反馈,我们会尽快为您处理(人工客服工作时间：9:00-18:30)。
= 50mA 250 400
SHEN Z HEN LONG JING MICRO-ELECTRONICS CO.,LTD TO-9
2 Plastic-Encapsulate Transistors
S8050 TRANSI
STOR (NPN)
FEATURES z Complimentary to S8550 z Collector Current: I C =0.5A
ELECTRICAL CHARACTERISTICS (T a =25℃ unless otherwise specified)
Parameter
Symbol Test conditions M in T yp
M ax
U nit Collector-base breakdown voltage V (BR)CBO I C = 100μA, I E =0
40
V Collector-emitter breakdown voltage V (BR)CEO I C =1mA, I B =
0 25
V
Emitter-base breakdown voltage V (BR)EBO I E =100μA, I C =0 5
V Collector cut-off current I CBO V CB =40 V ,I E =0
0.1 μA Collector cut-off current I CEO V CB =20V , I E =0 0.1 μA Emitter cut-off current
I EBO V EB = 5V , I C =0
0.1
μA
H FE(1)
V CE =1V, I C DC current gain
H FE(2)
V CE =1V, I C = 500mA
50
Collector-emitter saturation voltage V CE (sat) I=500 mA, I B = 50mA
0.6 V Base-emitter saturation voltage V BE (sat) I C =500 mA, I B = 50mA
1.2 V Transition frequency
f T
V CE =6V, I C = 20mA
f=30MHz
150
MHz
TO-92
1.EMITTER
2.BASE
3.COLLECTOR
10100
1000
10
25
50
75
100
125
150
100
200
300
400
0.0
0.4
0.8
1.2
f ——I h ——
D C C U R R
E N T G A I N h
F E
COLLECTOR CURRENT I C
(mA)I 30
300
C O L L E C T O R -E M I T T E R S A T U R A T I O N
V O L T A G E V C E s a t (m V )
COLLECTOR CURRENT I C (mA)
I V —— 500
30
10
3
REVERSE VOLTAGE V (V)
V / V C / C ——
C A P A C I T A N C E C (p F )
T R A N S I T I O N F R E Q U E N C Y f T (M H z )
COLLECTOR CURRENT I C (mA)
S8050
Typical Characterisitics
C O L L E C T O R P O W E R
D I S S I P A T I O N
P C (m W )
AMBIENT TEMPERATURE T a ()
℃P C —— T a
500V I ——
3
C O L L E C T O R C U R R E N T I C (m A )
BASE-EMMITER VOLTAGE V BE (V)
B A S E -E M I T T E R S A T U R A T I O N V O L T A G E V B E s a t (V )
COLLECTOR CURRENT I C (mA)
I V ——
C O L L E C T O R C U R R E N T I C (m A )
COLLECTOR-EMITTER VOLTAGE V CE (V)
3.COLLECTOR
2.BASE MARKING:
1. EMITTER