二输入与非门、或非门版图设计教学内容
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二输入与非门、或非门版图设计
课程名称
Course 集成电路设计技术项目名称
Item
二输入与非门、或非门
版图设计
与非门电路的版图：
.spc文件（瞬时分析）：
* Circuit Extracted by Tanner Research's L-Edit V7.12 / Extract V4.00 ;
* TDB File: E:\cmos\yufeimen, Cell: Cell0
* Extract Definition File: C:\Program Files\Tanner EDA\L-Edit\spr\morbn20.ext * Extract Date and Time: 05/25/2011 - 10:03
.include H:\ml2_125.md
VPower VDD GND 5
va A GND PULSE (0 5 0 5n 5n 100n 200n)
vb B GND PULSE (0 5 0 5n 5n 50n 100n)
.tran 1n 400n
.print tran v(A) v(B) v(F)
* WARNING: Layers with Unassigned AREA Capacitance.
*
*
*
*
*
*
* WARNING: Layers with Unassigned FRINGE Capacitance.
*
*
*
*
*
*
*
*
* WARNING: Layers with Zero Resistance.
*
*
*
*
* NODE NAME ALIASES
* 1 = VDD (34,37)
* 2 = A (29.5,6.5)
* 3 = B (55.5,6.5)
* 4 = F (42.5,6.5)
* 6 = GND (25,-22)
M1 VDD B F VDD PMOS L=2u W=9u AD=99p PD=58u AS=54p PS=30u
* M1 DRAIN GATE SOURCE BULK (47.5 14.5 49.5 23.5)
M2 F A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS=99p PS=58u
* M2 DRAIN GATE SOURCE BULK (39.5 14.5 41.5 23.5)
M3 F B 5 GND NMOS L=2u W=9.5u AD=52.25p PD=30u AS=57p PS=31u * M3 DRAIN GATE SOURCE BULK (47.5 -18 49.5 -8.5)
M4 5 A GND GND NMOS L=2u W=9.5u AD=57p PD=31u AS=52.25p PS=30u * M4 DRAIN GATE SOURCE BULK (39.5 -18 41.5 -8.5)
* Total Nodes: 6
* Total Elements: 4
* Extract Elapsed Time: 0 seconds
.END
与非门电路仿真波形图（瞬时分析）：
.spc文件（直流分析）：
* Circuit Extracted by Tanner Research's L-Edit V7.12 / Extract V4.00 ;
* TDB File: E:\cmos\yufeimen, Cell: Cell0
* Extract Definition File: C:\Program Files\Tanner EDA\L-Edit\spr\morbn20.ext * Extract Date and Time: 05/25/2011 - 10:03
.include H:\ml2_125.md
VPower VDD GND 5
va A GND 5
vb B GND 5
.dc va 0 5 0.02 vb 0 5 0.02
.print dc v(F)
* WARNING: Layers with Unassigned AREA Capacitance.
*
*
*
*
*
*
* WARNING: Layers with Unassigned FRINGE Capacitance.
*
*
*
*
*
*
*
*
* WARNING: Layers with Zero Resistance.
*
*
*
*
* NODE NAME ALIASES
* 1 = VDD (34,37)
* 2 = A (29.5,6.5)
* 3 = B (55.5,6.5)
* 4 = F (42.5,6.5)
* 6 = GND (25,-22)
M1 VDD B F VDD PMOS L=2u W=9u AD=99p PD=58u AS=54p PS=30u
* M1 DRAIN GATE SOURCE BULK (47.5 14.5 49.5 23.5)
M2 F A VDD VDD PMOS L=2u W=9u AD=54p PD=30u AS=99p PS=58u
* M2 DRAIN GATE SOURCE BULK (39.5 14.5 41.5 23.5)
M3 F B 5 GND NMOS L=2u W=9.5u AD=52.25p PD=30u AS=57p PS=31u * M3 DRAIN GATE SOURCE BULK (47.5 -18 49.5 -8.5)
M4 5 A GND GND NMOS L=2u W=9.5u AD=57p PD=31u AS=52.25p PS=30u * M4 DRAIN GATE SOURCE BULK (39.5 -18 41.5 -8.5)
* Total Nodes: 6
* Total Elements: 4
* Extract Elapsed Time: 0 seconds
.END
与非门电路仿真波形图（直流分析）：