利用晶体生长软件FEMAG对蓝宝石晶体生长的仿真计算方法
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晶体生长模拟软件FEMAG之晶体生长各种方法

4) Lower LID effect, low feedstock requirements and higher yield.
FEMAGSoft © 2010
VB Growth Method
VB is widely used to grow Si/Ge and compound crystals: (待续)………………
t 1800 1740 1680 1620 1560 1500 1440 1380 1320 1260 1200 1140 1080 1020 960 900 840 780 720 660 600 540 480 420 360 300
2) Part of Germanium crystal grown by CZ method 3) Sappher and lots Compound crystal grown by CZ or its variants, such as Kyropoulos, LEC etc. 4) Market share of CZ wafer in solar market slightly lower than DSS mc wafer
It is assumed that for a certain region of the thermal stresses the crystal is in a metastable state, and a certain perturbation energy is necessary to leave this metastable state. By this model, it can be understood that the crystal can bear higher stresses than the critical values determined by a tensile test. Conforming to the classical idea of dislocation generation it starts somewhere near the growth interface, where the highest stresses are located and then grows deeper into the crystal. At these points of high stress level, the dislocation process may be started due to a perturbation energy resulting from:
FEMAGSoft © 2010
VB Growth Method
VB is widely used to grow Si/Ge and compound crystals: (待续)………………
t 1800 1740 1680 1620 1560 1500 1440 1380 1320 1260 1200 1140 1080 1020 960 900 840 780 720 660 600 540 480 420 360 300
2) Part of Germanium crystal grown by CZ method 3) Sappher and lots Compound crystal grown by CZ or its variants, such as Kyropoulos, LEC etc. 4) Market share of CZ wafer in solar market slightly lower than DSS mc wafer
It is assumed that for a certain region of the thermal stresses the crystal is in a metastable state, and a certain perturbation energy is necessary to leave this metastable state. By this model, it can be understood that the crystal can bear higher stresses than the critical values determined by a tensile test. Conforming to the classical idea of dislocation generation it starts somewhere near the growth interface, where the highest stresses are located and then grows deeper into the crystal. At these points of high stress level, the dislocation process may be started due to a perturbation energy resulting from:
晶体生长建模软件FEMAG-模拟策略

Direct dynamic
– calculated crystal shape – precribed heater power history – effect of pull rate and solid-liquid interface deformation on the solidification heat
• To resort to appropriate and up-to-date numerical simulation techniques to couple and solve these models
→ quasi-steady and dynamic models
FEMAGSoft © 2013
Inverse dynamic simulation (imposed crystal shape, calculated heater power): power oscillations resulting from inverse modeling, and smoothed power
FEMAGSoft © 2013
Stream function
psi 7.4E-05 7.1E-05 6.8E-05 6.5E-05 6.2E-05 5.8E-05 5.5E-05 5.2E-05 4.9E-05 4.6E-05 4.3E-05 4.0E-05 3.6E-05 3.3E-05 3.0E-05 2.7E-05 2.4E-05 2.1E-05 1.7E-05 1.4E-05 1.1E-05 8.0E-06 4.8E-06 1.7E-06 -1.5E-06 -4.7E-06
Quasi-steady
– thermal equilibrium – adapted heater power Inverse dynamic to get the prescribed – adapted heater power Quasi-dynamic crystal diameter to grow the prescribed frozen geometry – –heat source on the (except the crystal shape solid-liquid interface) solidification front in – effect of pull rate and to thepower pull to getsolid-liquid interface –proportion adapted heater rate the prescribed crystal diameter deformation on the – effect of pull rate and solid-solidification heat liquid interface deformation on the solidification heat
晶体生长计算软件FEMAG系列之晶体生长方法介绍

可扩展性
软件具有开放性和可扩展性, 用户可以根据需要添加新的材 料属性和边界条件。
图形界面
提供友好的图形界面,方便用 户进行模型建立、参数设置和 结果分析。
软件应用领域
半导体晶体生长
用于研究半导体晶体生长过程中的物理和化学行 为,优化晶体质量和性能。
光学晶体生长
用于研究光学晶体的生长过程,优化晶体光学性 能和加工工艺。
增强可视化功能
为了更好地帮助用户理解和分析计算结果,FEMag软件将 增加更强大的可视化功能,如3D图形界面、实时渲染等, 使用户能够更直观地查看和操作计算结果。
拓展应用领域和范围
扩大应用领域
随着晶体生长研究的不断发展,FEMag软件的应用领域将不 断扩大。未来,FEMag软件将不仅应用于传统的晶体生长研 究,还将拓展到其他相关领域,如材料科学、化学、生物学 等。
该软件通过建立数学模型,模拟晶体生长过程中各 种因素对晶体形态、结构和性能的影响。
FEMag软件提供了丰富的材料属性和边界条件设置 ,支持多种晶体结构和生长条件。
软件特点
01
02
03
04
高效计算
采用有限元方法进行数值计算 ,能够快速求解大规模的晶体 生长问题。
精确模拟
能够模拟晶体生长过程中的温 度场、浓度场、应力场等物理 场,以及化学反应过程。
专业和深入。
与实验结果的比较
FEMag与实验的一致性
FEMag软件在模拟晶体生长方面取得了与实验结果高度一致的结果。通过对比实验和模拟数据,可以验证 FEMag软件的准确性和可靠性,进一步推动其在晶体生长研究中的应用。
实验验证的局限性
尽管FEMag软件与实验结果具有较好的一致性,但实验验证仍然存在局限性。实验条件和参数的微小变化可能 会对结果产生显著影响,而模拟结果可能无法完全反映这些细微差异。因此,将实验和模拟结果相结合,进行综 合分析是更为可靠的方法。
FEMAG晶体生长专业模拟软件-模拟策略

FEMAG晶体生长专业模拟软件
-建模策略
Franç ois Dupret1,2, Roman Rolinsky2, Brieuc Delsaute2, Rajesh Ramaya2, Nathalie Van den Bogaert2
1
Universitécatholique de Louvain, Louvain-la-Neuve, Belgium FEMAGSoft S.A. company, Louvain-la-Neuve, Belgium
• d) Geometrical modeling: to accurately handle strongly deforming bodies and interface and well-capture all the boundary layers
• e) Solution technique: coupled Newton-Raphson iterations by use of a highly effective linear solver
FEMAGSoft © 2013
1. Numerical strategy (cont’d)
Inverse QS and TD simulation of the Global temperature growth of a 300 field mm silicon crystal
t 1800 1740 1680 1620 1560 1500 1440 1380 1320 1260 1200 1140 1080 1020 960 900 840 780 720 660 600 540 480 420 360 300
Quasi-steady
– thermal equilibrium – adapted heater power Inverse dynamic to get the prescribed – adapted heater power Quasi-dynamic crystal diameter to grow the prescribed frozen geometry – –heat source on the (except the crystal shape solid-liquid interface) solidification front in – effect of pull rate and to thepower pull to getsolid-liquid interface –proportion adapted heater rate the prescribed crystal diameter deformation on the – effect of pull rate and solid-solidification heat liquid interface deformation on the solidification heat
-建模策略
Franç ois Dupret1,2, Roman Rolinsky2, Brieuc Delsaute2, Rajesh Ramaya2, Nathalie Van den Bogaert2
1
Universitécatholique de Louvain, Louvain-la-Neuve, Belgium FEMAGSoft S.A. company, Louvain-la-Neuve, Belgium
• d) Geometrical modeling: to accurately handle strongly deforming bodies and interface and well-capture all the boundary layers
• e) Solution technique: coupled Newton-Raphson iterations by use of a highly effective linear solver
FEMAGSoft © 2013
1. Numerical strategy (cont’d)
Inverse QS and TD simulation of the Global temperature growth of a 300 field mm silicon crystal
t 1800 1740 1680 1620 1560 1500 1440 1380 1320 1260 1200 1140 1080 1020 960 900 840 780 720 660 600 540 480 420 360 300
Quasi-steady
– thermal equilibrium – adapted heater power Inverse dynamic to get the prescribed – adapted heater power Quasi-dynamic crystal diameter to grow the prescribed frozen geometry – –heat source on the (except the crystal shape solid-liquid interface) solidification front in – effect of pull rate and to thepower pull to getsolid-liquid interface –proportion adapted heater rate the prescribed crystal diameter deformation on the – effect of pull rate and solid-solidification heat liquid interface deformation on the solidification heat
利用晶体生长计算软件FEMAG进行晶体生长计算仿真的结果图 ppt课件

利用晶体生长计算软件FEMAG进 行晶体生长计算仿真的结果图
利用晶体生长计算软件FEMAG进行晶 体生长计算仿真的结果图
• FEMAG软件是世界上第一款商业的材料晶体生长数值模拟软件,由比利时 新鲁汶大学教授Dr. François Dupret于20世纪80年代中期领导开发。
• Dr. François Dupret是第二届晶体生长模型国际研讨会主席、EUROTHERM相 变热力学研讨会联合主席、机械工程学位委员会主席,曾担任国际晶体生 长(Journal of Crystal Growth)期刊主编。
• FEMAG软件拥有国际上最先进、最高效、最全面的晶体生长工艺模拟技术 和多物理场耦合仿真功能,可模拟的晶体生长工艺包括提拉法(柴氏法,Cz 法)、泡生法(Ky法)、区熔法(FZ法)、坩埚下降法(垂直布里兹曼法, VB法)、物理气相传输法(PVT法)等,广泛应用于集成电路、太阳能光伏 、半导体、蓝宝石等领域。ON Semiconductor(安森美半导体)、美国 Kayex、Siltronic(世创电子材料)、AXT(美国晶体技术集团)、韩国 Nexolon、LG、韩国汉阳大学、Norut(挪威北方研究所)、日本SUMCO集团 、Gritek(有研新材料)、天津环欧半导体材料、中环股份、北京有色金属 研究总院、清华大学等企业和科研机构,均是FEMAG软件的用户。
FEMAG定向凝固模拟软件用于设计新的热场,并研发新的 方法以满足新的商业需求点,比如: ✓晶体微结构 ✓优化 ✓扩大生产规模
利用晶体生长计算软件FEMAG进行晶 体生长计算仿真的结果图
利用晶体生长计算软件FEMAG进行晶体生长计 算仿真的结果图
利用晶体生长计算软件FEMAG进行晶 体生长计算仿真的结果图
利用晶体生长计算软件FEMAG进行 晶体生长计算仿真的结果图
利用晶体生长计算软件FEMAG进行晶 体生长计算仿真的结果图
• FEMAG软件是世界上第一款商业的材料晶体生长数值模拟软件,由比利时 新鲁汶大学教授Dr. François Dupret于20世纪80年代中期领导开发。
• Dr. François Dupret是第二届晶体生长模型国际研讨会主席、EUROTHERM相 变热力学研讨会联合主席、机械工程学位委员会主席,曾担任国际晶体生 长(Journal of Crystal Growth)期刊主编。
• FEMAG软件拥有国际上最先进、最高效、最全面的晶体生长工艺模拟技术 和多物理场耦合仿真功能,可模拟的晶体生长工艺包括提拉法(柴氏法,Cz 法)、泡生法(Ky法)、区熔法(FZ法)、坩埚下降法(垂直布里兹曼法, VB法)、物理气相传输法(PVT法)等,广泛应用于集成电路、太阳能光伏 、半导体、蓝宝石等领域。ON Semiconductor(安森美半导体)、美国 Kayex、Siltronic(世创电子材料)、AXT(美国晶体技术集团)、韩国 Nexolon、LG、韩国汉阳大学、Norut(挪威北方研究所)、日本SUMCO集团 、Gritek(有研新材料)、天津环欧半导体材料、中环股份、北京有色金属 研究总院、清华大学等企业和科研机构,均是FEMAG软件的用户。
FEMAG定向凝固模拟软件用于设计新的热场,并研发新的 方法以满足新的商业需求点,比如: ✓晶体微结构 ✓优化 ✓扩大生产规模
利用晶体生长计算软件FEMAG进行晶 体生长计算仿真的结果图
利用晶体生长计算软件FEMAG进行晶体生长计 算仿真的结果图
利用晶体生长计算软件FEMAG进行晶 体生长计算仿真的结果图
利用晶体生长计算软件FEMAG进行 晶体生长计算仿真的结果图
利用晶体生长软件FEMAG对蓝宝石晶体生长的仿真计算方法

Content
➢ General introduction ➢ Sapphire Growth
Page ▪ 2
CONFIDENTIAL
Introduction
For more than 25 years, FEMAGSoft develops simulation software dedicated to the research and development of optimal crystal growth processes. 1984 First research on Germanium growth in University of Louvain.
Specifications: - Temperature in the sapphire and in all furnace components by solving the
global heat transfer in the furnace (radiation, conduction , convection). - Flow velocity in the sapphire liquid phase. - Crystallization front shape - Ohmic and Induction Heating - Advanced radiation heat transfer in the sapphire - Gas convection - Anisotropic thermal stresses in the crystal
Page ▪ 11
CONFIDENTIAL
Global simulations
No simplification of the process conditions
晶体生长计算软件FEMAG系列之晶体生长方法介绍 ppt课件

16
FEMAGSoft © 2010
定向凝固法(DSS)
在过去几年半导体晶体生长制造商都因采用直拉
法/垂直梯度凝晶体固生长法计(算软件CFZE/MVAGG系F列)之 而获益
晶体生长方法介绍
17
FEMAGSoft © 2010
定向凝固法(DSS)
定向凝固法工艺的主要问题:
增加产出 晶粒尺寸的控制和增大 掺杂/杂质( C/N )分布 位错
晶体生长计算软件FEMAG系列之 晶体生长方法介绍
22
FEMAGSoft © 2010
晶体生长计算软件FEMAG系列之晶 体生长方法介绍
1
晶体生长计算软件FEMAG 之
晶体生长方法介绍
晶体生长计算软件FEMAG系列之
2
晶体生长方法介绍
精品资料
• 你怎么称呼老师? • 如果老师最后没有总结一节课的重点的难点,你
是否会认为老师的教学方法需要改进? • 你所经历的课堂,是讲座式还是讨论式? • 教师的教鞭 • “不怕太阳晒,也不怕那风雨狂,只怕先生骂我
6
FEMAGSoft © 2010
ห้องสมุดไป่ตู้
String Ribbon法 (Evergreen Solar Inc.专利设计)
硅晶体生长方法
导模法(EFG)
晶体生长计算软件FEMAG系列之 晶体生长方法介绍
7
FEMAGSoft © 2010
热场设计的重要性
晶体生长的首要问题是设计适合的热场和 相应的操作条件,这不仅决定了晶体的主 要特性,对于每个集成电路晶片制造商而 言,也是最主要的核心技术所在。
FEMAGSoft © 2010
定向凝固法的热点问题
晶体生长计算软件FEMAG系列之 晶体生长方法介绍
利用晶体生长软件FEMAG对蓝宝石晶体生长的仿真计算方法ppt课件

RADIATION
CONVECTION CONDUCTION
MESH
GEOMETRY
…
FEMAG3 NEW 2011 •Very accurate : Finite Element and Spectral methods •Very efficient : 3D simulations in less 1 day •Very flexible : Very fast development of new demand
Specifications: - Temperature in the sapphire and in all furnace components by solving the
global heat transfer in the furnace (radiation, conduction , convection). - Flow velocity in the sapphire liquid phase. - Crystallization front shape - Ohmic and Induction Heating - Advanced radiation heat transfer in the sapphire - Gas convection - Anisotropic thermal stresses in the crystal
Page 11
CONFIDENTIAL
Global simulations
No simplification of the process conditions
Page 12
HEM Furnace for Sapphire
Czochralski Furnace for Silicon
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Prof. François Dupret 1989 First research on Silicon growth in University of Louvain. 1992 First collaborations with major IC companies.
Development of defect-free silicon wafer production. Today, more than 35 patents are referencing FEMAG Software 2003 FEMAGSoft S.A., spin-off from University of Louvain. 2006 Collaboratrion with major Solar companies. Development of low-cost and low-oxygen content processes. 2009 Large investment for a new software framework 2010 Release of Software application for Sapphire ingot production.
Result using coarse mesh
Result using BLM mesh
Page ▪ 25
Velocity field
FEMAGSoft © 2012
FEMAG-HEM
FEMAG-HEM Software to simulate Sapphire Growth by Heat Exchange Method
Stream function
Page ▪ 22
FEMAGSoft © 2012
Melt meshes
BLM mesh is very important to simulate the interface
Coarse mesh
Page ▪ 23
BLM (boundary layer mesh)
FEMAGSoft © 2012
Sapphire Growth by CZ and kyropoulos
Page ▪ 7
CONFIDENTIAL
Sapphire growth by HEM
Page ▪ 8
CONFIDENTIAL
What are FEMAG software?
▪ Process-dedicated simulation tools, adapted to your own processes and able to solve your problems.
利用晶体生长软件FEMAG 对蓝宝石晶体生长仿真模拟方法
Page ▪ 1
FEMAGSoft S.A., Belgium
A SPIN-OFF company from
Universite catholique de Louvain Belgium
Professor F. Dupret
CONFIDENTIAL
Specifications: - Temperature in the sapphire and in all furnace components by solving the
global heat transfer in the furnace (radiation, conduction , convection). - Flow velocity in the sapphire liquid phase. - Crystallization front shape - Ohmic and Induction Heating - Advanced radiation heat transfer in the sapphire - Gas convection - Anisotropic thermal stresses in the crystal
Content
➢ General introduction ➢ Sapphire Growth
Page ▪ 2
CONFIDENTIAL
Introduction
For more than 25 years, FEMAGSoft develops simulation software dedicated to the research and development of optimal crystal growth processes. 1984 First research on Germanium growth in University of Louvain.
CZ process with Induction Heating system
Page ▪ 20
Temperature in the crystal and in the melt
CONFIDENTIAL
FEMAG-CZ/OX
The interface shape and position is a result of the simulation
▪ Time Dependent
Page ▪ 9
CONFIDENTIAL
Process-dedicated tools
▪ FEMAG-CZ : Czochralski ▪ FEMAG-FZ : Floating Zone ▪ FEMAG-VB : Vertical Bridgman ▪ FEMAG-CZ/OX : Czochralski for Sapphire ▪ FEMAG-KY : Kyropoulos ▪ FEMAG-DS : Directional Solidification ▪ FEMAG-HEM : Heat Exchange Method
CZ process with Induction Heating system
Page ▪ 21
Melt velocity amplitude
CONFIDENTIAL
FEMAG-CZ/OX / CZ and KYROPOULOS process
Temperature field in the melt
▪ Global ▪ All the furnace components are considered. ▪ All the heat transfer mode are considered (radiation transfer, heat conduction, melt and gas convection) ▪ Induction and ohmic heating
Local temperature field
BLM mesh enables a better prediction of the crystalisation interface
Page ▪R24esult using coarse mesh
Result using BLM mesh FEMAGSoft © 2012
Specifications: - Temperature in the sapphire and in all furnace components by solving the
global heat transfer in the furnace (radiation, conduction , convection). - Flow velocity in the sapphire liquid phase. - Crystallization front shape - Advanced radiation heat transfer in the sapphire - Gas convection - Anisotropic thermal stresses in the crystal
the resulting crystal quality.
Page ▪ 16
CONFIDENTIAL
Sapphire Simulation Objective
CZOCHRALSKI
KYROPULOS
Page ▪ 17
CONFIDENTIAL
HEM
FEMAG-CZ/OX
FEMAG-CZ/OX Software to simulate Sapphire Growth by CZ and Kyropoulos
Page ▪ 18
CONFIDENTIAL
FEMAG-CZ/OX
Induction Heating system
CZ process with Induction Heating system
Page ▪ 19
Temperature in the Hot Zone
CONFIDENTIAL
FEMAG-CZ/OX
Page ▪ 15
CONFIDENTIAL
Sapphire Simulation Objective
Our goal is to provide accurate simulation tool, able to take all the process features into account and to optimize the growth process in terms of
Page ▪ 13
CONFIDENTIAL
Sapphire Crystal Growth Simulation
Page ▪ 14
CONFIDENTIAL
Sapphire Simulation Objective
➢ The market of Sapphire is experiencing a very fast growth rate and become very competitive ➢Many companies invest in simulation software in order to reinforce their positions ➢ HEM, Czochralski and Kyropoulos process require optimization and a good understanding ➢ Strong need for efficient numerical tools. ➢ Radiation effects in the participating crystal and melt is a complex problem.
Development of defect-free silicon wafer production. Today, more than 35 patents are referencing FEMAG Software 2003 FEMAGSoft S.A., spin-off from University of Louvain. 2006 Collaboratrion with major Solar companies. Development of low-cost and low-oxygen content processes. 2009 Large investment for a new software framework 2010 Release of Software application for Sapphire ingot production.
Result using coarse mesh
Result using BLM mesh
Page ▪ 25
Velocity field
FEMAGSoft © 2012
FEMAG-HEM
FEMAG-HEM Software to simulate Sapphire Growth by Heat Exchange Method
Stream function
Page ▪ 22
FEMAGSoft © 2012
Melt meshes
BLM mesh is very important to simulate the interface
Coarse mesh
Page ▪ 23
BLM (boundary layer mesh)
FEMAGSoft © 2012
Sapphire Growth by CZ and kyropoulos
Page ▪ 7
CONFIDENTIAL
Sapphire growth by HEM
Page ▪ 8
CONFIDENTIAL
What are FEMAG software?
▪ Process-dedicated simulation tools, adapted to your own processes and able to solve your problems.
利用晶体生长软件FEMAG 对蓝宝石晶体生长仿真模拟方法
Page ▪ 1
FEMAGSoft S.A., Belgium
A SPIN-OFF company from
Universite catholique de Louvain Belgium
Professor F. Dupret
CONFIDENTIAL
Specifications: - Temperature in the sapphire and in all furnace components by solving the
global heat transfer in the furnace (radiation, conduction , convection). - Flow velocity in the sapphire liquid phase. - Crystallization front shape - Ohmic and Induction Heating - Advanced radiation heat transfer in the sapphire - Gas convection - Anisotropic thermal stresses in the crystal
Content
➢ General introduction ➢ Sapphire Growth
Page ▪ 2
CONFIDENTIAL
Introduction
For more than 25 years, FEMAGSoft develops simulation software dedicated to the research and development of optimal crystal growth processes. 1984 First research on Germanium growth in University of Louvain.
CZ process with Induction Heating system
Page ▪ 20
Temperature in the crystal and in the melt
CONFIDENTIAL
FEMAG-CZ/OX
The interface shape and position is a result of the simulation
▪ Time Dependent
Page ▪ 9
CONFIDENTIAL
Process-dedicated tools
▪ FEMAG-CZ : Czochralski ▪ FEMAG-FZ : Floating Zone ▪ FEMAG-VB : Vertical Bridgman ▪ FEMAG-CZ/OX : Czochralski for Sapphire ▪ FEMAG-KY : Kyropoulos ▪ FEMAG-DS : Directional Solidification ▪ FEMAG-HEM : Heat Exchange Method
CZ process with Induction Heating system
Page ▪ 21
Melt velocity amplitude
CONFIDENTIAL
FEMAG-CZ/OX / CZ and KYROPOULOS process
Temperature field in the melt
▪ Global ▪ All the furnace components are considered. ▪ All the heat transfer mode are considered (radiation transfer, heat conduction, melt and gas convection) ▪ Induction and ohmic heating
Local temperature field
BLM mesh enables a better prediction of the crystalisation interface
Page ▪R24esult using coarse mesh
Result using BLM mesh FEMAGSoft © 2012
Specifications: - Temperature in the sapphire and in all furnace components by solving the
global heat transfer in the furnace (radiation, conduction , convection). - Flow velocity in the sapphire liquid phase. - Crystallization front shape - Advanced radiation heat transfer in the sapphire - Gas convection - Anisotropic thermal stresses in the crystal
the resulting crystal quality.
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Sapphire Simulation Objective
CZOCHRALSKI
KYROPULOS
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HEM
FEMAG-CZ/OX
FEMAG-CZ/OX Software to simulate Sapphire Growth by CZ and Kyropoulos
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FEMAG-CZ/OX
Induction Heating system
CZ process with Induction Heating system
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Temperature in the Hot Zone
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FEMAG-CZ/OX
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Sapphire Simulation Objective
Our goal is to provide accurate simulation tool, able to take all the process features into account and to optimize the growth process in terms of
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Sapphire Crystal Growth Simulation
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Sapphire Simulation Objective
➢ The market of Sapphire is experiencing a very fast growth rate and become very competitive ➢Many companies invest in simulation software in order to reinforce their positions ➢ HEM, Czochralski and Kyropoulos process require optimization and a good understanding ➢ Strong need for efficient numerical tools. ➢ Radiation effects in the participating crystal and melt is a complex problem.