Circuits and systems
CMOS 模拟集成电路课件完整

VTHN VTHN0
2qsi Na Cox
VGS 1 0 1.0 VDS 2 0 5
.op .dc vds 0 5 .2 Vgs 1 3 0.5 .plot dc -I(vds) .probe
*model .MODEL MNMOS NMOS VTO=0.7 KP=110U +LAMBDA=0.04 GAMMA=0.4 PHI=0.7
.end
Systems
Ch13 开关电容电路
Ch14 DAC/ADC
complex Ch10 运算放大器 Ch7 频率响应
Ch11 稳定性和频 率补偿
Ch8 噪声
Ch12 比较器 Ch9 反馈
Ch3 电流源电流镜 simple Ch4 基准源 Circuits
Devices
Ch5 单级放大器 ch2 MOS器件
*Output Characteristics for NMOS M1 2 1 0 0 MNMOS w=5u l=1.0u
VGS 1 0 1.0 VDS 2 0 5
设计
属性/规范
系统/电路1
系统/电路2 系统/电路3
……
一般产品描述、想法 系统规范要求的定义
系统设计 电路模块规范定义
电路实现 电路仿真
否
是否满足系统规范
是 物理(版图)设计
物理(版图)验证
寄生参数提取及后仿真
否
是否满足系统规范
HSPICE使用_tsinghua

• 元件名:以关键字母起始、不超过16个字符的元 件标识; • 节点映射表:依次排列的接口节点; • 参数表:元件参数赋值,不写明则取默认值。
2008-3-17
池保勇 张凌炜 清华大学微电子所
18
Laboratory of Integrated Circuits and Systems, Tsinghua University
2008-3-17
池保勇 张凌炜 清华大学微电子所
4
Laboratory of Integrated Circuits and Systems, Tsinghua University
Hspice 简介
• 工业界最广泛使用的 IC 设计工具 • 支持 Bsim3v3、Bsim4 等深亚微米级纳米级 MOSFET模型 • 电路仿真能得到精确有结果
• 混合源 ▫ V1 1 0 0.5V AC=10V,90
直流电压 0.5 V,交流电压幅度 10 V,相位 90 度
2008-3-17 池保勇 张凌炜 清华大学微电子所
21
Laboratory of Integrated Circuits and Systems, Tsinghua University
独立源——瞬态源
• 用不同的关键字标识不同的瞬态波形
▫ ▫ ▫ ▫ ▫ ▫ ▫ Trapezoidal pulse (PULSE function) Sinusoidal (SIN function) Exponential (EXP function) Piecewise linear (PWL function) Single-frequency FM (SFFM function) Single-frequency AM (AM function) Pattern (PAT function)
ieee 超页费用

After Page: Short
After Page: Brief or Communication
After Page: Tutorial
After Page: Invited
After Page: Letters
After Page: Review
Electron Devices Electronic Materials Embedded Systems Letters Emerging and Selected Topics in Circuits & Systems Energy Conversion Engineering in Medicine and Biology Magazine Engineering Management Engineering Management Review Evolutionary Computation Fuzzy Systems Geoscience & Remote Sensing Geoscience & Remote Sensing Letters Haptics Human-Machine Systems Image Processing Industrial Electronics Industrial Informatics Industry Applications Industry Applications Magazine Information Forensics & Security
After Page: Invited
After Page: Letters
After Page: Review
Microelectromechanical Systems Microwave & Wireless Components Letters Microwave Magazine Microwave Theory & Techniques Mobile Computing Multimedia Multimedia Magazine Nanobiosciences Nanotechnology Nanotechnology Letters Network & Service Management Network: The Magazine of Global Internetworking Networking Neural Networks and Learning Systems Neural Systems & Rehabilitation Engineering Nuclear Science Oceanic Engineering Optical Communications and Networking Journal Parallel & Distributed Systems
信息存储技术课堂报告-忆阻器交叉点阵列的非理想特性与解决方案

互联电阻压降会导致交叉
and
互联电阻压降会损害读裕
阵列中每个单元上的有效
度并使感应电路的设计变
电压分布不均匀、写入延
得复杂。
迟不均匀、潜电流不均匀。
1.C. Wang, D. Feng, J. Liu, W. Tong, B. Wu, and Y. Zhang. 2017. DAWS: Exploiting crossbar characteristics for improving write performance of high density resistive memory. In Proceedings of the IEEE International Conference on Computer Design (ICCD’17). 281–288. 2. M. A. Zidan, A. M. Eltawil, F. Kurdahi, H. A. H. Fahmy, and K. N. Salama. 2014. Memristor multiport readout: A closed-form solution for sneak paths. IEEE Trans. Nanotechnol. 13, 2 (2014), 274–282.
Flip-N-Write的伪代码 Flip-N-Write实例
1.W. Wen, L. Zhao, Y. Zhang and J. Yang, "Speeding up crossbar resistive memory by exploiting in-memory data patterns," 2017 IEEE/ACM International Conferenceon Computer-Aided Design (ICCAD), Irvine, CA, 261-267. 2.Y. Zhang, D. Feng, W. Tong, Y. Hua, J. Liu, Z. Tan, C. Wang, B. Wu, Z. Li, and G. Xu. 2018. CACF: A novel circuit architecture co-optimization framework for improving performance, reliability and energy of ReR main memory system. ACM Trans. Archit. Code Optim. 15, 2 (2018). 3.W. Wen, L. Zhao, Y. Zhang and J. Yang, "Exploiting In-memory Data Patterns for Performance Improvement on Crossbar Resistive Memory," in IEEE Transactions on Computer-Aided Design of Integrated Circuits a Systems.
电路与电子技术课件(英文版)-第一章 电路的基本概念

Topics Covered
Week 1
Week 2
Monday Nov. 25, 2019
Tuesday Nov. 26, 2019
Friday Nov. 29, 2019
Monday Dec. 2, 2019
Tuesday Dec. 3, 2019
Friday Dec. 6, 2019
Fundamentals of Electric Circuits: Elements of electric circuits; Kirchhoff’s law; Voltage/Current divider laws; Series and parallel circuits
10
Alessandra Volta (1745 – 1827)
Kirchhoff’s Voltage Law(KVL)
▪ The voltage, or potential difference, btw two points in a circuit indicates the energy required to move charge from one point to the other.
13
Kirchhoff’s Voltage Law(KVL)
▪ The principle underlying KVL is that no energy is lost or created in an electric circuit; in circuit terms, the sum of all voltages associated with source must equal the sum of the load voltages, so that the net voltage around a closed circuit is _________?.
英语作文-集成电路设计行业:从初学者到专家的必备技能

英语作文-集成电路设计行业:从初学者到专家的必备技能Integrated Circuit Design Industry: Essential Skills from Beginner to Expert。
Introduction:The integrated circuit (IC) design industry plays a crucial role in the development of modern technology. From smartphones to self-driving cars, ICs are the backbone of electronic devices. To excel in this industry, individuals need to acquire a set of essential skills that will take them from being a beginner to an expert. This article aims to provide an overview of these skills and their importance in the IC design industry.1. Solid Foundation in Electronics:A strong understanding of electronics is the foundation of IC design. Beginners should start by learning basic concepts such as Ohm's Law, Kirchhoff's Laws, and semiconductor physics. This knowledge will help them comprehend the behavior of electronic components and their interactions within an IC.2. Proficiency in Programming:Programming skills are becoming increasingly important in IC design. Beginners should focus on learning languages such as Verilog or VHDL, which are widely used in designing digital circuits. These languages allow designers to describe the behavior of their circuits and simulate their functionality before fabrication.3. Knowledge of IC Design Tools:Proficiency in using IC design tools is essential for both beginners and experts. Tools like Cadence or Synopsys provide a platform to design, simulate, and verify ICs. Beginners should familiarize themselves with these tools and learn how to navigate through their various features.4. Understanding of Digital and Analog Design:IC design encompasses both digital and analog circuits. Beginners should acquire a solid understanding of both domains. Digital design involves logic gates, flip-flops, and sequential circuits, while analog design deals with continuous signals and amplifiers. A comprehensive understanding of these concepts is crucial for successful IC design.5. Familiarity with Design Verification:Design verification is the process of ensuring that an IC design meets its specifications. Beginners should learn techniques such as functional simulation, timing analysis, and formal verification. These methods help identify and rectify design flaws, ensuring the reliability and functionality of the final product.6. Knowledge of Low Power Design:In today's world, power efficiency is a critical consideration in IC design. Beginners should be aware of low power design techniques such as clock gating, power gating, and voltage scaling. These techniques help reduce power consumption without compromising the performance of the IC.7. Awareness of Design for Testability:Design for Testability (DFT) is an essential aspect of IC design. It involves incorporating features that facilitate testing and fault diagnosis. Beginners should familiarize themselves with DFT techniques like scan chains, built-in self-test (BIST), and boundary scan. These techniques simplify the testing process, ensuring the quality and reliability of the manufactured IC.8. Continuous Learning and Adaptability:The field of IC design is ever-evolving, with new technologies and methodologies emerging regularly. To stay ahead, individuals must have a thirst for continuous learning and adaptability. Beginners should actively engage in professional development, attend conferences, and keep up with industry trends to enhance their skills and expertise.Conclusion:Becoming an expert in the IC design industry requires a combination of foundational knowledge, technical skills, and adaptability. By acquiring a solid understanding of electronics, programming, IC design tools, digital, and analog design, as well as verification and low power techniques, individuals can progress from being beginners to experts. Furthermore, a commitment to continuous learning and staying updated with industry advancements is crucial for long-term success in this dynamic field. With the right skills and dedication, one can thrive in the exciting world of integrated circuit design.。
HSPICE使用简介

• 详细使用方法参见 Hspice 各版本手册相关章节
2008-3-17 池保勇 张凌炜 清华大学微电子所
22
Laboratory of Integrated Circuits and Systems, Tsinghua University
受控源
• 受控源是输出电信号受输入电信号控制的行为级 电路元件模型。 • 受控源可实现多种形式的输出-输入关系:
各版本的使用手册主体 内容差别不大,主要是 在内部组织和目录编排 上不太相同。
2008-3-17 池保勇 张凌炜 清华大学微电子所
8
Laboratory of Integrated Circuits and Systems, Tsinghua University
Synopsys, HSPICE®Simulation and Analysis User Guide (2007); Synopsys, HSPICE®and RF Command Reference (2007)
2008-3-17
池保勇 张凌炜 清华大学微电子所
9
Laboratory of Integrated Circuits and Systems, Tsinghua University
一个输入文件的例子
文件标题
注释
引用网单文件与库文件
分析及输出配臵
元件描述
激励源
2008-3-17
池保勇 张凌炜 清华大学微电子所
子电路调用
.param prn=2 .global VDD GND
X1 node0 node1 inv w=0.6u
子电路定义时共使用了三个参加:l、w、prn 其中 l、w 在定义时给出了默认值 子电路调用时只对 w 进行了调用赋值,l 为定义的默认值,prn 为全局参数值
Journal of Circuits, Systems, and Computers fc World Scienti c Publishing Company USING PER

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1 In the circuit as shown in Fig Q.1, the Zener diode has a reverse-biased voltage V Z = 2.5 V. Calculate the values of the load voltage V L and its load current I L if R L = 1 k ΩR5RLVL -+Fig. Q.1The load voltage V L is calculated to be(a) 1.62V (b) 2.22V (c) 2.50V (d) 0 V2 In the circuit as shown in Fig Q.1, find the load current I L for the condition as described in Q.1.(a) 0 A(b) 1.62 mA (c) 2.22 mA (d) 6.0 mA3. In the circuit as shown in Fig Q.1, find the zener diode current I Z for the condition as described in Q.1. (a) 0 A (b) 1.62 mA (c) 2.22 mA (d) cannot be determined, required non-linear diode characteristics4. For the circuit in Fig Q.4, the BJT (Q2) has current gain β = 150 , output resistance r o = 20 k Ω , and emitter resistance r e = 15Ω (using T-model representation, operating at the operating temperature).VoutVinFig Q.4When the circuit in Fig Q.4 is used to amplify small a.c. signals, determine the value for the resistance r π for the equivalent a.c. small signal equivalent circuit(a) 20 k Ω (b) 2.25 k Ω (c) 2.265 k Ω (d) 22.5 k Ω5.For the circuit in Fig. Q.4, which one of the following model is NOT a correct representation of the small signal equivalent circuit for the bipolar transistor Q2:Fig 5(a) Fig 5(b)(a) Fig 5 (a) (b) Fig 5 (b) (c) Fig 5 (c) (d) Fig 5 (d)β iFig 5(c) Fig 5(d)6.For the circuit in Fig Q.4, which of the following is the equivalent a.c. small signal circuit representation of the whole circuit:RC 3.9kbeta iRC 3.9kFig 6(a) Fig 6(b)VoutRC 3.9kVinbeta ibeta iRC 3.9kFig 6(c) Fig 6(d)(a) Fig 6 (a) (b) Fig 6 (b) (c) Fig 6 (c) (d) Fig 6 (d)Small signal a.c. equivalent circuit:7. For the circuit in Fig Q.4 and for the conditions as described in Q.4, determine the inputimpedance as seen by the signal source, Z i(a) 2.265 k Ω (b) 2.254 k Ω (c) 470 k Ω (d)1.99 k Ω8. For the circuit in Fig Q.4 and for the conditions as described in Q.4, determine the outputimpedance Z o seen by the load when connected to the terminal V out(a) 3.9 k Ω (b) 20 k Ω(c) 1.322 k Ω (d) 3.264 k Ω9. For the circuit in Fig. Q.4 and for the conditions as described in Q4, determine the voltage gainA v of the amplifier circuit.(a) 217.6 (b) -217.6 (c) 258.3 (d) -258.310. Find an expression for the output voltage V o of the circuit as shown in Fig. Q.10 , relating to theinput voltages V i .R2Fig Q.10(a)42311o i R R V V R R ⎛⎫=+ ⎪⎝⎭(b)32141o i R R V V R R ⎛⎫=+ ⎪⎝⎭(c)423141o i R R V V R R R ⎛⎫=+ ⎪+⎝⎭(d) 214311o iR V V R R ⎛⎫+⎪⎝⎭=⎛⎫+ ⎪⎝⎭11. Using the circuit as shown in Fig. Q.10, calculate the voltage gain (Vout/Vin) using the numericalvalues for the resistors. Given R 1 = 10 k Ω, R 2 = 20 k Ω, R 3 = 15 k Ω, R 4 = 5 k Ω(a) 1 (b) 9(c) 0.75 since 5201025307551510v k k A ..k k k ⎛⎫⎛⎫=+=⨯= ⎪⎪+⎝⎭⎝⎭(d) 2.2512. Find the relationship Vo/V_in for the circuit as shown in Fig. Q.12. Express the relationship interms of the resistance R 1 and R 2 and hence evaluate the numerical value.R2Fig Q.12(a) 2_1oin R V V R =, hence, Vo = 10 V _in (b) 2_1o in RV V R =-, hence, Vo = -10 V _in(c) 2_11o in R V V R ⎛⎫=+ ⎪⎝⎭ , hence Vo = 11 V _in(d) 2_11o in R V V R ⎛⎫=-+ ⎪⎝⎭ , hence Vo = -11 V _in13. Find the relationship V_out/V_in for the circuit as shown in Fig. Q.12. Express the relationship interms of the resistance R 1, R 2, R 3 and R 4 and then evaluate the numerical value.(a) 42__31outin R R V V R R ⎛⎫-=⎪⎝⎭ , hence V _out = -25 V _in (b)42__31out in R R V V R R ⎛⎫⎛⎫= ⎪⎪⎝⎭⎝⎭ , hence V _out = 25 V _in(c) 42__311outin R R V V R R ⎛⎫-=+ ⎪⎝⎭ , hence V _out = -27.5 V _in (d) 2242__3111outin R R V V R R ⎛⎫⎛⎫=++ ⎪⎪⎝⎭⎝⎭ , hence V _out = 38.5 V _in14. Find the relationship Vo/Vs for the circuit as shown in Fig. Q.14. Express the relationship interms of the resistance value R 1 and R 2.R2Fig Q.14(a)21o S R V V R =-(b)121o S R V V R ⎛⎫=+⎪⎝⎭(c) 211o S R V V R ⎛⎫=+ ⎪⎝⎭(d) 12o S RV V R =-15. Suggest numerical values for R2 if the voltage gain Vo/Vs is the same as the voltage gain(V_out/V_in) obtained in Q.13. Given R1 = 5 k Ω(a) 125 k Ω (b) 120 k Ω (c) 132.5 k Ω (d) 187.5 k ΩThe op amp is connected in the non-inverting mode, henceVoltage gain is : 211V RA R =+Given Av = 25, R 1 = 5 k Ω, then R 2 = 24 R 1 = 120 k Ω16. For the circuit as shown in Fig Q.16, express the output voltage Vo as a function of the threeinput voltages V1, V2 and V3.R2Fig Q.16(a) Vo = -10 V1 + 5 V2 – 4 V3 (b) Vo = 10 V1 – 5 V2 + 4 V3 (c) Vo = 11 V1 – 5 V2 + 5 V3 (d) Vo = -11 V1 + 5 V2 – 5 V3Consider the first stage of the inverting amplifier,Consider the second stage of the inverter amplifier,17. For the circuit as shown in Fig Q.16, suggest what value of resistance you would change if theoutput voltage is to be expressed as the following : Vo = 5 V1 – 5V2 + 2 V3(a) Change R5 from 100k to 50 k(b) Change R2 from 100k to 50 k(c) Change R6 from 25k to 50 k(d) Change R3 from 100k to 200k - to replaced by : Change R1 from 10k to 20kThis question has two possible answers as it stands. It should have only one correct answer, and if (d) is replaced by Change R1 from 10k to 20k, then the correct answer will be (b)only18. Consider the emitter-follower amplifier as shown in Fig Q.18.Fig Q.18Calculate the d.c. bias current for the collector, I CQ(a) 2.383 mA(b) 6.415 mA(c) 11.33 mA(d) 13.50 mA19. For the circuit as shown in Q.18 (Fig Q.18), calculate the d.c. bias collector to emitter voltage,V CEQ for the transistor(a) 1.37 V(b) 8.52 V(c) 13.87 V(d) 14.7 V()()()212126310157510101010575076415151011641511510164151010852B CCBB BEQBQB EBQCQBQCCCEQ ER kV V.VR R k kR R R k k kV V..I.AR R k kI I.mAV V I R..V-==⨯=++===Ω--===μ+β++⨯=β==-β+=-⨯⨯⨯=20. For the circuit as shown in Q.18 (Fig Q.18), draw the small signal a.c. equivalent circuit for mid-band operation. Assuming that the circuit is operating in the mid-band region for which the coupling and bypass capacitors are short circuitsr_piRLr_piRLFig Q20aFig Q20bRLRLFig Q20cFig Q20d(a) Fig Q20 a (b) Fig Q20 b (c) Fig Q20 c (d) Fig Q20 d21. For the circuit as shown in Q. 18 (Fig Q.18), find the value of r π (small signal a.c. base to emitterresistance). Given VT = 26 mV.(a) 1.09 k Ω(b) 405.3 Ω (c) 229.5 Ω (d) 192.6 Ω22. For the circuit as shown in Q.18 (Fig Q.18), calculate the voltage gain, A V .(a) 123.4 (b) 82.2 (c) 3.01 (d) 0.98Using the equivalent circuit to determine Vo/Vi :23. For the circuit as shown in Q.18 (Fig Q.18), find the input impedance Z i .(a) 5 k Ω (b) 4.36 k Ω (c) 1 k Ω (d) 34.07 k ΩTo find the input impedance, ()()()()11111140531013333340753407436in B it''L b b in it L b b in Z R Z i r i R V Z r R ...k i i Z k .k .k ππ=+β+===+β+=+⨯=Ω==Ω24.For the circuit as shown in Q.18 (Fig Q.18), find the output impedance Zo .(a) 12.1 Ω (b) 333.3 Ω (c) 500 Ω (d) 1 k ΩTo find the output impedance,()()()()()()()()1158333111111114053833311211101x out x''xx S S B x S b b E'x x S x x b b b 'E E ES x 'out x E S 'S out E V Z i V i i ;R R R k k .;V i r R R V i i i r R i i V R R R r R i Z V R r R r R ..Z R k .πππππ=β++====Ω=-+⎛⎫β+∴β++=-+⇒=-β+=+ ⎪+⎝⎭⎛⎫β+∴==+ ⎪+⎝⎭⎛⎫++⎛⎫∴=== ⎪ ⎪β+⎝⎭⎝⎭Ω25. For the circuit as shown in Q.18 (Fig Q.18), find the current gain, A i .(a) -41.4 (b) 41.4 (c) 8.61 (d) 22To find current gain, and power gain :()43609888615000988861851out L o in i V i in in L V i V Z iZ .k A A ..i Z G A A ...====⨯===⨯=。