STD30NF03L中文资料

STD30NF03LN -CHANNEL 30V -0.020Ω-30A DPAKSTripFET ™POWER MOSFETs TYPICAL R DS(on)=0.020Ωs LOW THRESHOLD DRIVEsADD SUFFIX ”T4”FOR ORDERING IN TAPE &REELDESCRIPTIONThis Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size ™”strip-based process.The resulting transistor shows extremely high packing density for low on-resistance,rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.APPLICATIONSs HIGH CURRENT,HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERSs MOTOR CONTROL,AUDIO AMPLIFIERS s DC-DC &DC-AC CONVERTERS®INTERNAL SCHEMATIC DIAGRAMOctober 199913DPAK TO-252(Suffix ”T4”)ABSOLUTE MAXIMUM RATINGSSymbol ParameterValue Unit V DS Drain-source Voltage (V GS =0)30V V DGR Drain-gate Voltage (R GS =20k Ω)30V V GS Gate-source Voltage±20V I D (•)Drain Current (continuous)at T c =25o C 30A I D Drain Current (continuous)at T c =100o C 19A I DM (••)Drain Current (pulsed)120A P tot Total Dissipation at T c =25oC 40W Derating Factor0.27W/o C E AS (1)Single Pulse Avalanche Energy 100m/JT st g Storage Temperature-65to 175o C T jMax.Operating Junction Temperature175oC(••)Pulse width limited by safe operating area (1) starting T j =25oC,I D =15A ,V DD =15V(•)Current limited by the packageTYPE V DSS R DS(o n)I D STD30NF03L30V<0.025Ω30A1/8THERMAL DATAR th j-pc b R thj-amb R t hj-s inkT l Thermal Resistance Junction-PC Board MaxThermal Resistance Junction-ambient MaxThermal Resistance Case-sink TypMaximum Lead Temperature For Soldering Purpose3.751001.5275o C/Wo C/Wo C/Wo CELECTRICAL CHARACTERISTICS(T case=25o C unless otherwise specified)OFFSymbol Parameter Test Conditions Min.Typ.Max.Unit V(BR)DSS Drain-sourceBreakdown VoltageI D=250µA V GS=030VI DSS Zero Gate VoltageDrain Current(V GS=0)V DS=Max RatingV DS=Max Rating T c=125o C110µAµAI GSS Gate-body LeakageCurrent(V DS=0)V GS=±20V±100nA ON(∗)Symbol Parameter Test Conditions Min.Typ.Max.Unit V GS(th)Gate Threshold Voltage V DS=V GS I D=250µA1 1.7 2.5VR DS(on)Static Drain-source OnResistance V GS=10V I D=15AV GS=4.5V I D=15A0.0200.0280.0250.035ΩΩI D(o n)On State Drain Current V DS>I D(o n)x R DS(on)ma xV GS=10V30A DYNAMICSymbol Parameter Test Conditions Min.Typ.Max.Unitg f s(∗)ForwardTransconductanceV DS>I D(o n)x R DS(on)ma x I D=15A13SC iss C os s C rss Input CapacitanceOutput CapacitanceReverse TransferCapacitanceV DS=25V f=1MHz V GS=0V83023092pFpFpFSTD30NF03L 2/8ELECTRICAL CHARACTERISTICS(continued)SWITCHING ONSymbol Parameter Test Conditions Min.Typ.Max.Unitt d(on) t r Turn-on Delay TimeRise TimeV DD=15V I D=20AR G=4.7 ΩV GS=4.5V(Resistive Load,see fig.3)35205nsnsQ g Q gs Q gd Total Gate ChargeGate-Source ChargeGate-Drain ChargeV DD=24V I D=30A V GS=5V1878nCnCnCSWITCHING OFFSymbol Parameter Test Conditions Min.Typ.Max.Unitt d(of f) t f Turn-off Delay TimeFall TimeV DD=15V I D=20AR G=4.7 ΩV GS=4.5V(Resistive Load,see fig.3)90240nsnsSOURCE DRAIN DIODESymbol Parameter Test Conditions Min.Typ.Max.UnitI SD I SDM(•)Source-drain CurrentSource-drain Current(pulsed)30120AAV SD(∗)Forward On Voltage I SD=30A V GS=0 1.5Vt rr Q rr I RRM Reverse RecoveryTimeReverse RecoveryChargeReverse RecoveryCurrentI SD=40A di/dt=100A/µsV DD=15V T j=150o C(see test circuit,fig.5)65722nsnCA(∗)Pulsed:Pulse duration=300µs,duty cycle1.5%(•)Pulse width limited by safe operating areaSafe Operating Area Thermal ImpedanceSTD30NF03L3/8Output Characteristics TransconductanceGate Charge vs Gate-source Voltage Transfer CharacteristicsStatic Drain-source On Resistance Capacitance VariationsSTD30NF03L 4/8Normalized Gate Threshold Voltage vs TemperatureSource-drain Diode Forward Characteristics Normalized On Resistance vs TemperatureSTD30NF03L5/8Fig.1:Unclamped Inductive Load Test Circuit Fig.3:Switching Times Test Circuits For Resistive Load Fig.2:Unclamped Inductive Waveform Fig.4:Gate Charge test CircuitFig.5:Test Circuit For Inductive Load Switching And Diode Recovery TimesSTD30NF03L6/8DIM.mminch MIN.TYP.MAX.MIN.TYP.MAX.A 2.2 2.40.0860.094A10.9 1.10.0350.043A20.030.230.0010.009B 0.640.90.0250.035B2 5.2 5.40.2040.212C 0.450.60.0170.023C20.480.60.0190.023D 6 6.20.2360.244E 6.4 6.60.2520.260G 4.4 4.60.1730.181H 9.3510.10.3680.397L20.80.031L40.610.0230.039==DL2L413==BE==B 2G2AC 2CHA 1DETAIL ”A”A 2DETAIL ”A”TO-252(DPAK)MECHANICAL DATA0068772-BSTD30NF03L7/8Information furnished is believed to be accurate and reliable.However,STMicroelect r onics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third part i es which may result from its use.No license is granted by implication or otherwise under any patent or patent rights of STMicroelectro nics.Specification mentioned in this publication are subject to change without notice.This publication supersedes and replaces all informat i on previously supplied.STMicroelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics©1999STMicroelectronics –Printed in Italy –All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia -Brazil -China -Finland -France -Germany -Hong Kong -India -Italy -Japa n -Malaysia -Malta -Morocco -Singapore -Spain -Sweden -Switzerland -United Kingdom -U.S.A..STD30NF03L8/8。