AO5800中文资料

Symbol
Typ Max 275330360450R θJL 300350Maximum Junction-to-Lead C
Steady-State
°C/W
Thermal Characteristics Parameter
Units Maximum Junction-to-Ambient A t ≤ 10s R θJA °C/W Maximum Junction-to-Ambient A Steady-State °C/W Absolute Maximum Ratings T =25°C unless otherwise noted AO5800
G1
G2D1
S2
D2
Symbol
Min Typ
Max
Units BV DSS 60
V 1T J =55°C
5±1µA ±100nA V GS(th)1 1.6
2.5
V I D(ON)
1.6
A 1.3 1.6T J =125°C
2.4531.5 1.9
Ωg FS 0.5S V SD 0.8
1V I S
0.4
A C iss 41
50pF C oss 9pF C rss
6pF t D(on)39.2
ns t r 35.7ns t D(off)261ns t f 79ns t rr 11.314ns Q rr
7.5
nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate-Body leakage current On state drain current
V GS =10V, V DS =5V Maximum Body-Diode Continuous Current
V DS =5V, I D =0.4A
I S =0.1A,V GS =0V Turn-Off DelayTime V GS =10V, V DS =30V, R L =75Ω, R GEN =3Ω
Turn-Off Fall Time
Output Capacitance Turn-On DelayTime SWITCHING PARAMETERS R DS(ON)Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage Input Capacitance DYNAMIC PARAMETERS ΩV GS =4.5V, I D =0.3A
I DSS µA Gate Threshold Voltage V DS =V GS I D =250µA V DS =48V, V GS =0V
V DS =0V, V GS =±10V Zero Gate Voltage Drain Current I GSS V DS =0V, V GS =±4.5V Electrical Characteristics (T J =25°C unless otherwise noted)STATIC PARAMETERS Parameter
Conditions Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I F =0.4A, dI/dt=100A/µs, V GS =-9V
Drain-Source Breakdown Voltage I D =250µA, V GS =0V V GS =10V, I D =0.4A
Reverse Transfer Capacitance
I F =0.4A, dI/dt=100A/µs, V GS =-9V
V GS =0V, V DS =30V, f=1MHz
Turn-On Rise Time A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev 1: January 2007。