Boundary element modeling for defect characterization potential in a wave guide

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Defect Inspection in Low-Contrast LCD Images

136IEEE TRANSACTIONS ON INDUSTRIAL INFORMATICS, VOL. 7, NO. 1, FEBRUARY 2011Defect Inspection in Low-Contrast LCD Images Using Hough Transform-Based Nonstationary Line DetectionWei-Chen Li and Du-Ming Tsai, Member, IEEEAbstract—In this paper, we propose a Hough transform-based method to identify low-contrast defects in unevenly illuminated images, and especially focus on the inspection of mura defects in liquid crystal display (LCD) panels. The proposed method works on 1-D gray-level proﬁles in the horizontal and vertical directions of the surface image. A point distinctly deviated from the ideal line of a proﬁle can be identiﬁed as a defect one. A 1-D gray-level proﬁle in the unevenly illuminated image results in a nonstationary line signal. The most commonly used technique for straight line detection in a noisy image is Hough transform (HT). The standard HT requires a sufﬁcient number of points lie exactly on the same straight line at a given parameter resolution so that the accumulator will show a distinct peak in the parameter space. It fails to detect a line in a nonstationary signal. In the proposed HT scheme, the points that contribute to the vote do not have to lie on a line. Instead, a distance tolerance to the line sought is ﬁrst given. Any point with the distance to the line falls within the tolerance will be accumulated by taking the distance as the voting weight. A fast search procedure to tighten the possible ranges of line parameters is also proposed for mura detection in LCD images. Experimental results have shown that the proposed method can effectively detect various mura defects including spot-, line-, and region-mura. It performs well for the test images containing nontextured and structurally textured patterns in the unevenly illuminated surfaces. Index Terms—Defect detection, Hough transform (HT), liquid crystal display, mura, surface inspection.Fig. 1. Low-contrast surface images in macroview and microview of LCD panels: (a1), (a2) faultless LCD surface images under macroview (lower resolution) and microview (higher-resolution), respectively; (b1), (b2) respective enhanced images of (a1), (a2); (a3), (a4) defective LCD surface images under macro and microview, respectively; (b3), (b4) respective enhanced images of (a3), (a4).I. INTRODUCTIONIN AUTOMATED surface inspection, defects in uniform or nontextured surfaces can be easily identiﬁed if the local anomalies have distinct contrasts from their regular surrounding neighborhood. However, a defect in the low-contrast image is extremely difﬁcult to detect when the defect shows no clear edges from its surroundings and the background presents uneven illumination. In this paper, we consider the task of automated visual inspection of low-contrast defects and, especially, aim at the mura defects in liquid crystal display (LCD) panels, where the material surfaces require uneven lighting to intensify the hardly visible defects.“Mura” is one large category of defects found in LCD manufacturing. It is derived from the Japanese word for blemish. Mura is a local brightness nonuniformity that causes an unpleasant sensation to human vision [1]. According to the size and shape, the types of mura can be roughly classiﬁed as line-mura, spot-mura, and region-mura. A line-mura is a narrow straight of brightness different from its surrounding neighborhood. A spot-mura is a small circular-shaped area defect. Region-mura is one of the most difﬁcult defects to detect in terms of the automated surface inspection algorithms since the region-mura possesses a large area of a LCD image and shows smooth changes of brightness from its uneven-lighting, low-contrast neighborhood. Fig. 1(a1) and (a2) demonstrate two surface images of a defect-free LCD panel, in which Fig. 1(a1) and (a2) are, respectively, the macroview (lower image resolution) and microview (higher image resolution) of the panel. Fig. 1(b1) and (b2) illustrate the respective enhanced images of Fig. 1(a1) and (a2) by linearly stretching the original gray levels between 0 and 255 for 8-bit displays. The enhancement equation is given byManuscript received March 21, 2009; revised August 18, 2009; accepted October 12, 2009. First published November 24, 2009; current version published February 04, 2011. Paper no. TII-09-03-0041. The authors are with the Department of Industrial Engineering and Management, Yuan-Ze University, Chung-Li 32003, Taiwan, China (e-mail: s958909@.tw; iedmtsai@.tw). Color versions of one or more of the ﬁgures in this paper are available online at . Digital Object Identiﬁer 10.1109/TII.2009.2034844where is the gray level at image coordinates and and are respectively the minimum and maximum gray levels in the image. It can be seen from Fig. 1(a2) that the microview of LCD panel presents a textured background. It comprises horizontal gate lines and vertical data lines in the1551-3203/$26.00 © 2010 IEEELI AND TSAI: DEFECT INSPECTION IN LOW-CONTRAST LCD IMAGES USING HT-BASED NONSTATIONARY LINE DETECTION137surface, and makes the sensed image a class of structural texture. Fig. 1(a3) and (a4) present two defective LCD images that contain, respectively, a line-mura and a spot-mura on the surfaces. Fig. 1(b3) and (b4) are the corresponding enhanced defect images of Fig. 1(a3) and (a4). The enhanced images of both defect-free and defective surfaces show that the surface images are unevenly illuminated and the defects present only smooth edge transition and low intensity contrast from the surrounding background. All these surface properties in images make the automated defect inspection task extremely difﬁcult. This section ﬁrst reviews the previous work on surface defect detection. It then describes the properties of the low-contrast mura in LCD images and the core of the proposed method to tackle the defect detection problem. A. Review of Related Work The requirement of defect detection in uniform surfaces has arisen in glass plates [2], [3], sheet steel [4], aluminum strips [5], and web materials [6]. Defects in these uniform images can be effectively identiﬁed with simple statistical measures such as the mean and variance of gray levels. They can also be easily detected using simple thresholding or edge-detection techniques. The main target surfaces in the present paper involves low-contrast anomalies in an uneven lighting background, which invalidates the use of ﬁrst-order statistics and thresholding and gradient methods to segment the defects. The currently available surface inspection techniques for defect detection in low-contrast images are either only applicable for speciﬁc types of small mura defects such as line-mura and spot-mura, or very computationally intensive for large regionmura. Saitoh [7] presented a machine vision scheme for the inspection of brightness unevenness in LCD panel surfaces. An edge detection algorithm was used to identify discontinuous points ﬁrst. Then, a genetic algorithm was applied to extract the boundary of anomalous brightness region. Kim et al. [8] studied the detection of spot-type defects in LCD panel surfaces. An adaptive multiple-level thresholding method based on the statistical characteristics of the local block is applied to segment the macroview defect from the background surface. Oh et al. [9] studied the detection of line-type defects in TFT-LCD panels. In a low-resolution image, a directional ﬁlter bank (DFB) that ﬁnds directional information is used to identify horizontal or vertical line-shaped abnormal regions. In a high resolution image, an adaptive multilevel thresholding technique is employed to detect abnormal line defects that are brighter or darker than the surrounding pixels. Zhang and Zhang [10] presented a fuzzy expert system to detect point defects, line defects and region defects in TFT-LCD panels. The defects are measured by the features of intensity contrast, area, location, direction and shape. The choice of proper defect features and design of fuzzy rules are time consuming, and highly rely on the types and characteristics of defects in question. Lee and Yoo [11] proposed a surface ﬁtting approach to identify low-contrast region-mura in LCD panels. For each data pixel, they ﬁrst used the modiﬁed regression diagnostics to roughly estimate the background region. The background region was further approximated by a low-order polynomial to generate a background surface. The estimated background surface was then subtracted from the original image to remove the inﬂuence of nonuniform backgroundand transform the segmentation problem into a simple thresholding one. This approach showed good detection results in the experiment. However, it is rather computationally intensive for background surface estimation. By observing the horizontal or vertical scan lines of an unevenly illuminated LCD image, the gray-level proﬁle of a scan line shows the trend of a straight line. Due to the effect of uneven illumination in the surface image, the proﬁle will not present a well-structured line. Rather, the gray-level proﬁle can be considered as a nonstationary signal that shows an upward, downward or ﬂat variation in direction. In this paper, we propose a Hough transform (HT)-based one-dimensional surface inspection scheme that can detect both small- and large-sized mura defects of varying shapes in LCD panel surfaces. Finding a line segment in a noisy nonstationary signal is a nontrivial problem. The most commonly used technique for straight line detection in a noisy image is the HT [12]. The HT for line detection in an image is based on a voting procedure which accumulates the number of points that lie on the same line of speciﬁc parameter values. For straight-line detection, the best straight line is estimated by the maximum counts of accumulator which corresponds to a pair of speciﬁc line parameters. The merit of HT that converts the difﬁcult shape detection in the Cartesian space into simple peak detection in the parameter space will not be beneﬁcial for nonstationary signals. The points deviated from a speciﬁc line, even with a minor distance to the line, will not be accumulated and the resulting peak is low and scattering. In this study, the standard HT is not suitable to detect the linear trend of nonstationary gray-level proﬁles in low-contrast images. The standard HT has been popularly applied to straight line detection since Duda and Hart [13] proposed the parameterspace transform method. It converts the Cartesian coordinate to parameter space for a line equation system with in the range of and . The transform creates the corresponding line equations, which intersect in . The accumulators count the number the parameter space of intersection points and ﬁnd a peak to decide a pair of speciﬁc parameter with respect to the line equation. The HT is a very costly algorithm in terms of computation time. The space complexity of the standard algorithm is determined by the number of accumulators in the parameter space, and the time complexity is determined by the total number of increments of parameter values. A number of speed-up algorithms for straight-line detection were developed to overcome the high computation load of the standard HT. Bergen and Shvaytser [14] described an efﬁcient probabilistic algorithm with Monte Carlo approximation to the HT. The complexity of the proposed algorithm is independent of the input size. The proposed probabilistic steps involve randomly choosing small subsets of points, and have shown that the complexity can be further reduced by sampling small subsets of points that jointly vote for likely patterns. Rau and Chen [15] used the principal axis analysis method to accelerate the extraction of straight lines and increase the accuracy of the detected lines. Duquenoy and TalebAhmed [16] proposed two HT acceleration techniques, spatial under-sampling and anticipated maxima detection. The undersampling technique was presented to ﬁnd the best criterion derived from the observed stability of the peak position in the138IEEE TRANSACTIONS ON INDUSTRIAL INFORMATICS, VOL. 7, NO. 1, FEBRUARY 2011parameter space to stop the transform calculation. The anticipated maxima detection adaptively detects the maximum peak of accumulation in the parameter space to improve the estimated accuracy of peak detection. Furthermore, many a modiﬁed HT methods were also proposed to improve the accuracy of line parameter estimation based on the coarse-to-ﬁne technique [17]–[20]. Niblack and Petkovic [21] alternatively used ﬁltering techniques in the Hough space to improve the estimation accuracy of line parameter values. Costa and Sandler [22] presented a normalized parameter space to reduce the effect of noise points so that the accuracy of peak detection can be improved. B. Surface Properties of LCD Images and Overview of the Method In physics, the energy from a light source that reaches a given part of a surface falls off as the inverse square of the distance that the light travels from the source to the surface [23]. Given the distance from the light source to one end of the image plane and the adding distance to the opposite end of the image plane. Generally, the light source distance is signiﬁcantly larger than ). If the the width of the sensed surface (roughly equal to can be distance is normalized as one unit, then if the term is approximately given by close to zero. Therefore, the intensity is linearly decreased from one end to the opposite end in the image plane if the light source distance is distinctly larger than the sensed surface width. By scanning the sensed 2-D surface image horizontally or vertically, the 1-D gray-level proﬁles crossing over faultless and defective surface regions will all have a global representation of straight line. Given a nonstationary gray-level proﬁle with the trend of a straight line, the defect points on the gray-level proﬁle can be detected by calculating the distance of each point to the best ﬁtting line of the proﬁle. If the distance of a point on the proﬁle is distinctly far away from the ﬁtting line, the point can then be declared as a defect one. The currently available HT methods focused on either improving accuracy of parameter values or accelerating computation time. The standard HT may perform poorly for nonstationary gray-level proﬁles in a low-contrast, unevenly illuminated image. Fig. 2(a) demonstrates a textured LCD image, in which the dark mura defect is in the central bottom area. Fig. 2(b) shows the gray-level proﬁles of two horizontal scan lines across defect-free (scan line 1) and mura (scan line 2) regions. Fig. 2(c) shows the detection results of the standard HT for the defective gray-level proﬁle (scan line 2), in which the detected straight-line with the largest accumulation peak is depicted in the ﬁgure. Fig. 2(d) presents an ideal straight line which makes the mura defect segment far away from the ﬁtting line. The demonstration sample reveals that the standard voting procedure of the HT is invalidated to ﬁnd the line segment in a nonstationary gray-level proﬁle. In this study, a revised version of the HT is proposed for line detection in nonstationary gray-level proﬁles. The standard HT requires a sufﬁcient number of points lie exactly on the same straight line at a given parameter resolution so that the accumulator will show a distinct peak in the parameter space to indicate the presence of a straight line. It fails to detect a line that has numerous points distributed around the vicinity of the lineFig. 2. Two-dimensional and one-dimensional LCD images: (a) original LCD image containing a mura defect in the central bottom area; (b) gray-level proﬁles crossing over defect-free and mura regions; (c) straight line detected by the HT for the scan line 2 in (b); and (d) expected straight line for the scan line 2 in (b).in a nonstationary signal. In the proposed HT-based scheme, the distance tolerance of a point to the line sought is ﬁrst given. Any point with the distance to the line falls within the tolerance will be accumulated as a function of the distance to the line sought. This approach allows the nonstationary points contribute to the accumulator in the voting processing. The proposed HT with adaptive voting weight under a given distance tolerance can well detect the most possible line equation in a nonstationary gray-level proﬁle. Any points on the gray-level proﬁle that are distinctly far away from the ﬁtting line can then be identiﬁed as defective ones. A fast search procedure that can tighten the possible ranges of the line parameters is also proposed by ﬁnding the global dominant line segment of all gray-level proﬁles in each scan direction. By recursively applying the proposed HT method to all individual row and column gray-level proﬁles, the actual region of a mura defect can be presented in the 2-D inspection image. II. NONSTATIONARY LINE SEARCH This section presents the proposed HT scheme for line detection in nonstationary gray-level proﬁles. The standard HT is ﬁrst introduced in Section II-A. The proposed HT-based scheme is then described in Sections II-B and II-C. A. Overview of Hough Transform (HT) In the standard HT algorithm for straight-line detection, the equation used to describe a line in two-dimensional (2-D) space is given by the parameters and in the normal form (1) where is the perpendicular distance of the line to the origin, and is the angle between the normal to the line and the posi-LI AND TSAI: DEFECT INSPECTION IN LOW-CONTRAST LCD IMAGES USING HT-BASED NONSTATIONARY LINE DETECTION139tive axis. To apply the HT with this form, each point is parameter mapped to all possible parameter values in the despace. A two-dimensional (2-D) voting accumulator notes the number of points falling on the line with parameter values and . The largest peak of the accumulator determines and , i.e., the speciﬁc pair ofwhere and denote the most possible parameter values of the straight line sought in the Cartesian space. The standard HT algorithm can well detect a strict line segment in a complicated, noisy image. For a given parameter values and , it basically accumulates for only those points line with a given parameter that lie exactly on the resolution. The points in a nonstationary proﬁle will be treated as the noisy ones, even they are in a distant neighborhood of line. The detection of local peaks in the vicinity the of maximum accumulator value, or an iterative coarse-to-ﬁne search [17]–[20], cannot take into account those points. Therefore, the standard HT may perform poorly for a nonstationary gray-level proﬁle, where only a small segment shows the trend of a straight line. B. Proposed HT Scheme In the proposed HT scheme, the points that contribute to the vote do not have to lie exactly on a line. Instead, the distance tolerance of a point to the line sought is ﬁrst given. Any point with the distance to the line falls within the tolerance will be accumulated as a function of the distance. Conversely, any point with the distance beyond the tolerance is discarded in the voting process. Highly nonstationary gray-level proﬁles require a larger distance tolerance , while more stable gray-level proﬁles use a smaller distance tolerance for detecting the line equation. be of size . For Let the inspection image , the a given horizontal scan line Y, , row gray-level proﬁle is denoted by . The coordinates of a point on the gray-level is then given by , for proﬁle Y of length . To simplify the notation, the gray-level is represented by , i.e., the point on a gray-level proﬁle is denoted by . To calculate the distance between a point and a straight line, we can rewrite (1) from the normal . That is form to the slop-intercept form (2) is the slop , and where . Therefore, the distance from a point proﬁle to the line with parameter values is the intercept in the gray-level is calculated by (3) The distance of a point is used to derive the voting weight in the accumulator, which is given by (4)where is the exponent and is used to adjust the signiﬁcance of a small change in distance . It is set at 3 in this study. Note is in the range between 0 and 1. A that the weight line has a maximum weight of point lying exactly on the 1, whereas the weight is dramatically reduced to 0 as the point is far away from the line. In order to accommodate the nonstationary nature of the graywith distance less level proﬁle, a point than a predetermined distance tolerance is considered as a point on the line with the voting weight deﬁned in (4). HenceThe accumulator then adds the voting weight as (5) At the end of the voting process, the ﬁnal line equation of the gray-level proﬁle is, therefore, given by the maximum value of , i.e.,To demonstrate the effectiveness of the proposed HT and the effect of changes in tolerance , four synthetic 1-D linear signals , , 2, 3, 4, with varying degrees of random noise are are given by created to verify the performance. The signals the following linear equation, which arewhere is a Gaussian noise with zero mean and standard , , , and . is a straight deviation to are the same straight lines line containing no noise, and and direction with added Gaussian noise. The distance of the ideal straight line are . Fig. 3(a)–(d) show the results of line detection for signals , , and from the proposed method. The distance tolerance is given by 2, 5, and 10 to test the ﬁtting results. Table I lists all the estimated and values with varying values. It can be observed that the proposed method can well detect nonfor line stationary lines even under the severe noise signal . The detected parameter values are very close to the true parameter values (159, 84). The peaks of the accumulator are directly proportional to the value of and the detection results are not sensitive to the changes in value. A synthetic gray-level proﬁle is also generated to demonstrate the effectiveness of the proposed HT that uses the distance as the adaptive weight to ﬁnd a straight line within a given distance tolerance. Fig. 4(a) shows the line detection result from the standard HT for the synthetic nonstationary proﬁle. The result indicates the linear trend of the proﬁle cannot be precisely detected. In contrast, Fig. 4(b) shows the line detection result from the proposed method. It well performs the detection of linear trend, regardless of the variation along the line. In defect detection, the proposed HT scheme is used to identify best ﬁtting lines of the oscillated, nonstationary gray-level proﬁles in a low-contrast image. During the scanning procedure140IEEE TRANSACTIONS ON INDUSTRIAL INFORMATICS, VOL. 7, NO. 1, FEBRUARY 2011Fig. 3. Four nonstationary line signals and their detected lines from the proposed method: (a) a synthetic line signal L without noise; (b)–(d) three synthetic line signals L L with different Gaussian noises of , , respectively. (a) L ; (b) L and ; (c) L ; and . (d) L ( = 10)=6=8= 10( = 0)( = 6)( = 8)TABLE I FITTING RESULTS OF THE PROPOSED METHOD FOR THE LINE SIGNALS IN Fig. 3The expected distance and direction of the line signal: = 159, = 84.Fig. 4. (a) Detected straight line from the standard HT for a nonstationary proﬁle. (b) Detected straight line from the proposed HT method. (a) ; ; . ; . (b) ; (68 83)() = (63 88)()=of an inspection image, each column (vertical) and row (horizontal) gray-level proﬁles are individually evaluated. Any point deviated distinctly from the ﬁtting line is marked as a defect one. , we have to estimate gray-level For an image of size proﬁles of horizontal rows and gray-level proﬁles of vertical columns in the image. The voting procedure of the proposed HT scheme for the points on the gray-level proﬁle is based on thedistance tolerance , i.e., the points need not lie exactly on the line sought. The standard HT needs only to evaluate all possible values of in a small ﬁnite range, and then can be calculated by using (1). For the proposed HT method, the line (1) cannot be and used to calculate the value for given coordinates values. Therefore, the proposed HT method must evaluate all possible combinations of both and . This should result in a huge computational burden if all possible combinations of must be evaluated for every point on the gray-level proﬁle. In order to make the proposed HT applicable to defect detection in a manufacturing process, we present a fast selection process that ﬁnds the most possible ranges of and in the line equation. For a given inspection image, all row gray-level proﬁles in the image should have the similar trend of a straight-line shape with or without defects on the surface. It is also true for all column gray-level proﬁles in the image. The core idea for the constraints of and values is to evaluate the ranges from a proﬁle map. The proﬁle map is constructed by overlapping all row gray-level plane (or the proﬁles (or column proﬁles) in the plane). The most possible ranges of and will be extracted from this proﬁle map. The detailed process for searching the ranges of line parameters and in the proﬁle map is discussed in the following section. C. Constraints on the Line Parameters andThe gray-level proﬁles of the same scan direction in a lowcontrast image have approximately the same trend of a line slop. We can therefore plot all gray-level proﬁles of the same scan direction on a map which has the gray-level (from 0 to 255 forLI AND TSAI: DEFECT INSPECTION IN LOW-CONTRAST LCD IMAGES USING HT-BASED NONSTATIONARY LINE DETECTION141Fig. 5. Construction procedure for the row and column proﬁle maps. Fig. 6. High-pass Haar wavelet decomposition: (a) horizontal proﬁle map ^ (x) of (a); and (c) wavelet detail signal R(x; f (x)); (b) upper contour R ^ (x) of (b). The dash-line in (c) represents the control limit 2 d .an 8-bit display) in the vertical axis and the proﬁle point number in the row and in the column) in ( the horizontal axis. Each row (or column) scan image will be (or ) plane to form a proﬁle map. overlapped in the Fig. 5 illustrates an image of size . It therefore involves row proﬁles and column proﬁles. The row proﬁle plane is given by map in theLikewise, the column proﬁle map in the structed asplane is recon-row gray proﬁles has similar trend of a line slop, the upper contour and lower contour in the ﬁltered proﬁle map are basically identical in shape. In a given inspection image, the defect-free region is generally distinctly larger than the defective region. Therefore, the defect-free line segwill be longer than any of the ment in the upper contour defective segments. We need only to identify the defect-free line and the possible range can be easily desegment from termined from such a segment. In this study, we use the fast Haar wavelet decomposition to of detect the longest line segment in the upper contour the ﬁltered proﬁle map. The range search procedure is proin the ﬁltered proceeded as follows. The upper contour ﬁle map is given byRange of : In the proﬁle map, a point of gray-level proﬁles is marked by 0 (black intensity), and the remaining empty space is marked by 1 (white intensity). Once the maps of row and column gray-level proﬁles are separately constructed, we can easily ﬁnd the ranges of and from the maps. The transform representation in the map shows a principal direction of the gray-level proﬁles. Thus, we can easily restrict the search range of within a once the principal direction in the proﬁle map small interval is determined. In the proposed search scheme of parameter ranges, the ranges of will be separately estimated from the row and , column proﬁle maps. For the row proﬁle map the morphological closing operation is ﬁrst implemented to eliminate the noisy points ﬁrst, i.e.,The upper contour is then decomposed into its detailed part using the Haar wavelet frame. Thuswhere and denote, respectively, the dilation and erosion 3 structuring element. The binary operation, and B is a 3 closing operation smoothes the contour and removes isolated (extreme) points in the proﬁle map. Since the majority of thewhere are the high-pass coefﬁcients of the Haar basis [24], and are given by and . is the decomposed detail version of , which entails only the ﬁne detail of the upper contour. Note that has the because same full length of the original upper contour the ﬁltered 1-D signal is not subsampled. Fig. 6(a) illustrates the ﬁltered horizontal proﬁle map of an image, and Fig. 6(b) presents its upper contour. Fig. 6(c) shows the detailed version in the wavelet decomposition. In order to extract the of dominant line segment that shows signiﬁcantly linear trend in , a simple statistical process control limit is used to set up the threshold. This threshold can effectively detect the transition。

半导体微电子专业词汇中英文对照

半导体微电子专业词汇中英文对照Accelerated testing 加速实验Acceptor 受主Acceptor atom 受主原子Accumulation 积累、堆积Accumulating contact 积累接触Accumulation region 积累区Accumulation layer 积累层Acoustic Surface Wave 声表面波Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源(放大）区A/D conversion 模拟—数字转换Adhesives 粘接剂Admittance 导纳Aging 老化Airborne 空载Allowed band 允带allowance 容限，公差Alloy-junction device合金结器件Aluminum(Aluminum）铝Aluminum – oxide 铝氧化物Aluminum Nitride 氮化铝Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度A M light 振幅调制光，调幅光amplitude limiter 限幅器Amorphous 无定形的，非晶体的Amplifier 功放放大器Analogue(Analog) comparator 模拟比较器Angstrom 埃Anneal 退火Anisotropic 各向异性的Anode 阳极Antenna 天线Aperture 孔径Arsenide （As) 砷Array 阵列Atomic 原子的Atom Clock 原子钟Attenuation 衰减Audio 声频Auger 俄歇Automatic 自动的Automotive 汽车的Availability 实用性Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation雪崩激发Background carrier 本底载流子Background doping 本底掺杂Backward 反向Backward bias 反向偏置Ball bond 球形键合Band 能带Band gap 能带间隙Bandwidth 带宽Bar 巴条发光条Barrier 势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact 基区接触Base stretching 基区扩展效应Base transit time 基区渡越时间Base transport efficiency基区输运系数Base—width modulation基区宽度调制Batch 批次Battery 电池Beam 束光束电子束Bench 工作台Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor （BJT)双极晶体管Bit 位比特Blocking band 阻带Body — centered 体心立方Body—centred cubic structure 体立心结构Boltzmann 波尔兹曼Bond 键、键合Bonding electron 价电子Bonding pad 键合点Boron 硼Borosilicate glass 硼硅玻璃Bottom-up 由下而上的Boundary condition 边界条件Bound electron 束缚电子Bragg effect 布拉格效应Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊FBrillouin zone 布里渊区Buffer 缓冲器Built-in 内建的Build—in electric field 内建电场Bulk 体/体内Bulk absorption 体吸收Bulk generation 体产生Bulk recombination 体复合Burn-in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Bus 总线Calibration 校准，检定，定标、刻度，分度Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carbon dioxide （CO2) 二氧化碳Carrier 载流子、载波Carry bit 进位位Cascade 级联Case 管壳Cathode 阴极Cavity 腔体Center 中心Ceramic 陶瓷（的)Channel 沟道Channel breakdown 沟道击穿Channel current 沟道电流Channel doping 沟道掺杂Channel shortening 沟道缩短Channel width 沟道宽度Characteristic impedance 特征阻抗Charge 电荷、充电Charge-compensation effects 电荷补偿效应Charge conservation 电荷守恒Charge drive/exchange/sharing/transfer/storage 电荷驱动/交换/共享/转移/存储Chemical etching 化学腐蚀法Chemically—Polish 化学抛光Chemically—Mechanically Polish （CMP）化学机械抛光Chemical vapor deposition (cvd)化学汽相淀积Chip 芯片Chip yield 芯片成品率Circuit 电路Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clean 清洗Clock rate 时钟频率Clock generator 时钟发生器Clock flip—flop 时钟触发器Close—loop gain 闭环增益Coating 涂覆涂层Coefficient of thermal expansion 热膨胀系数Coherency 相干性Collector 集电极Collision 碰撞Compensated OP-AMP 补偿运放Common-base/collector/emitter connection 共基极/集电极/发射极连接Common—gate/drain/source connection 共栅/漏/源连接Common—mode gain 共模增益Common-mode input 共模输入Common—mode rejection ratio (CMRR) 共模抑制比Communication 通信Compact 致密的Compatibility 兼容性Compensation 补偿Compensated impurities 补偿杂质Compensated semiconductor 补偿半导体Complementary Darlington circuit 互补达林顿电路Complementary Metal-Oxide-SemiconductorField-Effect-Transistor(CMOS）互补金属氧化物半导体场效应晶体管Computer-aided design (CAD)/test（CAT)/manufacture（CAM）计算机辅助设计/ 测试/制造Component 元件Compound Semiconductor 化合物半导体Conductance 电导Conduction band （edge）导带(底)Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 结构Conlomb 库仑Constants 物理常数Constant energy surface 等能面Constant-source diffusion恒定源扩散Contact 接触Continuous wave 连续波Continuity equation 连续性方程Contact hole 接触孔Contact potential 接触电势Controlled 受控的Converter 转换器Conveyer 传输器Cooling 冷却Copper interconnection system 铜互连系统Corrosion 腐蚀Coupling 耦合Covalent 共阶的Crossover 交叉Critical 临界的Cross—section 横断面Crucible坩埚Cryogenic cooling system 冷却系统Crystal defect/face/orientation/lattice 晶体缺陷/晶面/晶向/晶格Cubic crystal system 立方晶系Current density 电流密度Curvature 曲率Current drift/drive/sharing 电流漂移/驱动/共享Current Sense 电流取样Curve 曲线Custom integrated circuit 定制集成电路Cut off 截止Cylindrical 柱面的Czochralshicrystal 直立单晶Czochralski technique 切克劳斯基技术(Cz法直拉晶体J））Dangling bonds 悬挂键Dark current 暗电流Dead time 空载时间Decade 十进制Decibel （dB）分贝Decode 解码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep energy level 深能级Deep impurity level 深度杂质能级Deep trap 深陷阱Defeat 缺陷Degenerate semiconductor 简并半导体Degeneracy 简并度Degradation 退化Degree Celsius（centigrade）/Kelvin 摄氏/开氏温度Delay 延迟Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽MOS Depletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Detector 探测器Developer 显影剂Diamond 金刚石Die 芯片（复数dice）Diode 二极管Dielectric Constant 介电常数Dielectric isolation 介质隔离Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant 扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dimension (1）尺寸(2)量钢（3）维，度Diode 二极管Dipole domain 偶极畴Dipole layer 偶极层Direct—coupling 直接耦合Direct—gap semiconductor 直接带隙半导体Direct transition 直接跃迁Directional antenna 定向天线Discharge 放电Discrete component 分立元件Disorder 无序的Display 显示器Dissipation 耗散Dissolution 溶解Distributed capacitance 分布电容Distributed model 分布模型Displacement 位移Dislocation 位错Domain 畴Donor 施主Donor exhaustion 施主耗尽Dopant 掺杂剂Doped semiconductor 掺杂半导体Doping concentration 掺杂浓度Dose 剂量Double—diffusive MOS(DMOS)双扩散MOS Drift 漂移Drift field 漂移电场Drift mobility 迁移率Dry etching 干法腐蚀Dry/wet oxidation 干/湿法氧化Dose 剂量Dual—polarization 双偏振，双极化Duty cycle 工作周期Dual-in-line package （DIP) 双列直插式封装Dynamics 动态Dynamic characteristics 动态属性Dynamic impedance 动态阻抗Early effect 厄利效应Early failure 早期失效Effect 效应Effective mass 有效质量Electric Erase Programmable Read Only Memory（E2PROM) 电可擦除只读存储器Electrode 电极Electromigration 电迁移Electron affinity 电子亲和势Electron-beam 电子束Electroluminescence 电致发光Electron gas 电子气Electron trapping center 电子俘获中心Electron Volt (eV) 电子伏Electro—optical 光电的Electrostatic 静电的Element 元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Emitter 发射极Emitter—coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥挤）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量-动量（E—K)图Enhancement mode 增强型模式Enhancement MOS 增强性MOSEnteric (低)共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer 外延层Epitaxial slice 外延片Epoxy 环氧的Equivalent circuit 等效电路Equilibrium majority /minority carriers 平衡多数/少数载流子Equipment 设备Erasable Programmable ROM （EPROM)可搽取(编程)存储器Erbium laser 掺铒激光器Error function complement 余误差函数Etch 刻蚀Etchant 刻蚀剂Etching mask 抗蚀剂掩模Excess carrier 过剩载流子Excitation energy 激发能Excited state 激发态Exciton 激子Exponential 指数的Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Fabry—Perot amplifier 法布里-珀罗放大器Face — centered 面心立方Fall time 下降时间Fan-in 扇入Fan—out 扇出Fast recovery 快恢复Fast surface states 快表面态Feedback 反馈Fermi level 费米能级Femi potential 费米势Fiber optic 光纤Field effect transistor 场效应晶体管Field oxide 场氧化层Figure of merit 品质因数Filter 滤波器Filled band 满带Film 薄膜Fine pitch 细节距Flash memory 闪存存储器Flat band 平带Flat pack 扁平封装Flatness 平整度Flexible 柔性的Flicker noise 闪烁（变）噪声Flip-chip 倒装芯片Flip— flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Focal plane 焦平面Forbidden band 禁带Formulation 列式，表达Forward bias 正向偏置Forward blocking /conducting 正向阻断/导通Free electron 自由电子Frequency deviation noise 频率漂移噪声Frequency response 频率响应Function 函数Gain 增益Gallium—Arsenide(GaAs) 砷化镓Gallium Nitride 氮化镓Gate 门、栅、控制极Gate oxide 栅氧化层Gate width 栅宽Gauss（ian）高斯Gaussian distribution profile 高斯掺杂分布Generation-recombination 产生-复合Geometries 几何尺寸Germanium(Ge) 锗Gold 金Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Graphene 石墨烯Grating 光栅Green laser 绿光激光器Ground 接地Grown junction 生长结Guard ring 保护环Guide wave 导波波导Gunn — effect 狄氏效应Gyroscope 陀螺仪Hardened device 辐射加固器件Harmonics 谐波Heat diffusion 热扩散Heat sink 散热器、热沉Heavy/light hole band 重/轻空穴带Hell — effect 霍尔效应Hertz 赫兹Heterojunction 异质结Heterojunction structure 异质结结构Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property 高场特性High—performance MOS（H—MOS)高性能MOS器件High power 大功率Hole 空穴Homojunction 同质结Horizontal epitaxial reactor 卧式外延反应器Hot carrier 热载流子Hybrid integration 混合集成Illumination （1)照明（2）照明学Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完整结构Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Inch 英寸Incremental resistance 电阻增量(微分电阻）In—contact mask 接触式掩模Index of refraction 折射率Indium 铟Indium tin oxide （ITO）铟锡氧化物Inductance 电感Induced channel 感应沟道Infrared 红外的Injection 注入Input power 输入功率Insertion loss 插入损耗Insulator 绝缘体Insulated Gate FET(IGFET) 绝缘栅FET Integrated injection logic 集成注入逻辑Integration 集成、积分Integrated Circuit 集成电路Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式结构Interface 界面Interference 干涉International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land 隔离岛Isotropic 各向同性Junction FET(JFET) 结型场效应管Junction isolation 结隔离Junction spacing 结间距Junction side—wall 结侧壁Laser 激光器Laser diode 激光二极管Latch up 闭锁Lateral 横向的Lattice 晶格Layout 版图Lattice binding/cell/constant/defect/distortion 晶格结合力/晶胞/晶格/晶格常熟/晶格缺陷/晶格畸变Lead 铅Leakage current （泄）漏电流Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid－phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Linearity 线性化Liquid 液体Lock in 锁定Longitudinal 纵向的Long life 长寿命Lumped model 集总模型Magnetic 磁的Majority carrier 多数载流子Mask 掩膜板，光刻板Mask level 掩模序号Mask set 掩模组Mass — action law 质量守恒定律Master-slave D flip-flop 主从D 触发器Matching 匹配Material 材料Maxwell 麦克斯韦Mean free path 平均自由程Mean time before failure （MTBF）平均工作时间Mechanical 机械的Membrane （1）薄腊，膜片（2）隔膜Megeto — resistance 磁阻Mesa 台面MESFET-Metal Semiconductor 金属半导体FET Metalorganic Chemical Vapor Deposition MOCVD 金属氧化物化学汽相淀积Metallization 金属化Metal oxide semiconductor (MOS）金属氧化物半导体MeV 兆电子伏Microelectronic technique 微电子技术Microelectronics 微电子学Microelectromechanical System (MEMS）微电子机械系统Microwave 微波Millimeterwave 毫米波Minority carrier 少数载流子Misfit 失配Mismatching 失配Mobility 迁移率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片MOSFET 金属氧化物半导体场效应晶体管Mount 安装Multiplication 倍增Modulator 调制Multi—chip IC 多芯片ICMulti—chip module(MCM) 多芯片模块Multilayer 多层Multiplication coefficient 倍增因子Multiplexer 复用器Multiplier 倍增器Naked chip 未封装的芯片（裸片) Nanometer 纳米Nanotechnology 纳米技术Negative feedback 负反馈Negative resistance 负阻Negative—temperature-coefficient负温度系数Nesting 套刻Noise figure 噪声系数Nonequilibrium 非平衡Nonvolatile 非挥发(易失）性Normally off/on 常闭/开Nuclear 核Numerical analysis 数值分析Occupied band 满带Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier （OPAMP）运算放大器Optical photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical—coupled isolator 光耦合隔离器Organic semiconductor 有机半导体Orientation 晶向、定向Oscillator 振荡器Outline 外形Out—of—contact mask 非接触式掩模Output characteristic 输出特性Output power 输出功率Output voltage swing 输出电压摆幅Overcompensation 过补偿Over-current protection 过流保护Over shoot 过冲Over—voltage protection 过压保护Overlap 交迭Overload 过载Oscillator 振荡器Oxide 氧化物Oxidation 氧化Oxide passivation 氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄生效应Parasitic oscillation 寄生振荡Pass band 通带Passivation 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Pattern 图形Payload 有效载荷Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent—storage circuit 永久存储电路Period 周期Permeable — base 可渗透基区Phase—lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photonic devices 光子器件Photolithographic process 光刻工艺Photoluminescence 光致发光Photo resist （光敏）抗腐蚀剂Photo mask 光掩模Piezoelectric effect 压电效应Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plane 平面的Plasma 等离子体Plate 板电路板P-N junction pn结Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor 聚合物半导体Poly—silicon 多晶硅Positive 正的Potential （电)势Potential barrier 势垒Potential well 势阱Power electronic devices电力电子器件Power dissipation 功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Print-circuit board(PCB）印制电路板Probability 几率Probe 探针Procedure 工艺Process 工艺Projector 投影仪Propagation delay 传输延时Proton 质子Proximity effect 邻近效应Pseudopotential method 赝势法Pump 泵浦Punch through 穿通Pulse triggering/modulating 脉冲触发/调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punchthrough 穿通Push—pull stage 推挽级Q Q值Quality factor 品质因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi－level 准费米能级Quartz 石英Radar 雷达Radiation conductivity 辐射电导率Radiation damage 辐射损伤Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative — recombination 辐照复合Radio 无线电射电射频Radio-frequency RF 射频Raman 拉曼Random 随机Range 测距Radio 比率系数Ray 射线Reactive sputtering source 反应溅射源Real time 实时Receiver 接收机Recombination 复合Recovery diode 恢复二极管Record 记录Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Red light 红光Reference 基准点基准参考点Refractive index 折射率Register 寄存器Regulate 控制调整Relative 相对的Relaxation 驰豫Relaxation lifetime 驰豫时间Relay 中继Reliability 可靠性Remote 远程Repeatability 可重复性Reproduction 重复制造Residual current 剩余电流Resonance 谐振Resin 树脂Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器) Resolution 分辨率Response time 响应时间Return signal 回波信号Reverse 反向的Reverse bias 反向偏置Ribbon 光纤带Ridge waveguide 脊形波导Ring laser 环形激光器Rotary wave 旋转波Run 运行Sampling circuit 取样电路Sapphire 蓝宝石(Al2O3）Satellite valley 卫星谷Saturated current range 电流饱和区Scan 扫描Scaled down 按比例缩小Schematic layout 示意图，简图Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Screen 筛选Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自对准的Self diffusion 自扩散Semiconductor 半导体Semiconductor laser半导体激光器Semiconductor—controlled rectifier 半导体可控硅Sensitivity 灵敏度Sensor 传感器Serial 串行/串联Series inductance 串联电感Settle time 建立时间Sheet resistance 薄层电阻Shield 屏蔽Shifter 移相器Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2）二氧化硅Silicon Nitride（Si3N4) 氮化硅Silicon On Insulator 绝缘体上硅Silver whiskers 银须Simple cubic 简立方Simulation 模拟Single crystal 单晶Sink 热沉Sinter 烧结Skin effect 趋肤效应Slot 槽隙Slow wave 慢波Smooth 光滑的Subthreshold 亚阈值的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Solution 溶液Sonband 子带Source 源极Source follower 源随器Space charge 空间电荷Space Craft 宇宙飞行器Spacing 间距Specific heat（PT) 比热Spectral 光谱Spectrum 光谱（复数)Speed-power product 速度功耗乘积Spherical 球面的Spin 自旋Split 分裂Spontaneous emission 自发发射Spot 斑点Spray 喷涂Spreading resistance 扩展电阻Sputter 溅射Square root 平方根Stability 稳定性Stacking fault 层错Standard 标准的Standing wave 驻波State-of-the-art 最新技术Static characteristic 静态特性Statistical analysis 统计分析Steady state 稳态Step motor 步进式电动机Stimulated emission 受激发射Stimulated recombination 受激复合Stopband 阻带Storage time 存储时间Stress 应力Stripline 带状线Subband 次能带Sublimation 升华Submillimeter 亚毫米波Substrate 衬底Substitutional 替位式的Superconductor 超导（电）体Superlattice 超晶格Supply 电源Surface mound表面安装Surge capacity 浪涌能力Switching time 开关时间Switch 开关Synchronizer 同步器，同步装置Synthetic-aperture 合成孔径System 系统Technical 技术的,工艺的Telecommunication 远距通信,电信Telescope 望远镜Terahertz 太赫兹Terminal 终端Template 模板Temperature 温度Tensor 张量Test 测试试验Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热平衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thick— film technique 厚膜技术Thin- film hybrid IC 薄膜混合集成电路Thin-Film Transistor（TFT) 薄膜晶体Three dimension 三维Threshold 阈值Through Silicon Via 硅通孔Thyistor 晶闸管Time resolution 时间分辨率Tolerance 公差T/R module 发射/接收模块Transconductance 跨导Transfer characteristic 转移特性Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging（stress) 晶体管老化Transit time 渡越时间Transition 跃迁Transition—metal silica 过度金属硅化物Transition probability 跃迁几率Transition region 过渡区Transmissivity 透射率Transmitter 发射机Transceiver 收发机Transport 输运Transverse 横向的Trap 陷阱Trapping 俘获Trapped charge 陷阱电荷Travelling wave 行波Trigger 触发Trim 调配调整Triple diffusion 三重扩散Tolerance 容差Tube 管子电子管Tuner 调节器Tunnel(ing) 隧道（穿）Tunnel current 隧道电流Turn - off time 关断时间Ultraviolet 紫外的Ultrabright 超亮的Ultrasonic 超声的Underfilling 下填充Undoped 无掺杂Unijunction 单结的Unipolar 单极的Unit cell 原(元)胞Unity— gain frequency 单位增益频率Unilateral-switch 单向开关Vacancy 空位Vacuum 真空Valence（value) band 价带Value band edge 价带顶Valence bond 价键Vapour phase 汽相Varactor 变容管Variable 可变的Vector 矢量Vertical 垂直的Vibration 振动Visible light 可见光Voltage 电压Volt 伏特Wafer 晶片Watt 瓦Wave guide 波导Wavelength 波长Wave-particle duality 波粒二相性Wear-out 烧毁Wetting 浸润Wideband 宽禁带Wire 引线Wire routing 布线Work function 功函数Worst-case device 最坏情况器件X-ray X射线Yield 成品率Zinc 锌。

半导体微电子专业词汇中英文对照

半导体微电子专业词汇中英文比较Accelerated testing 加快实验Acceptor受主Acceptor atom受主原子Accumulation累积、聚积Accumulating contact累积接触Accumulation region累积区Accumulation layer累积层Active region 有源区Active component 有源元Active device 有源器件Activation 激活Activation energy 激活能Active region 有源（放大）区A/D conversion 模拟 - 数字变换Adhesives 粘接剂Admittance 导纳Aging老化Airborne空载Allowed band允带allowance容限，公差Alloy-junction device 合金结器件Aluminum(Aluminum) 铝Aluminum – oxide 铝氧化物Aluminum Nitride氮化铝Aluminum passivation 铝钝化Ambipolar 双极的Ambient temperature 环境温度A M light振幅调制光，调幅光amplitude limiter限幅器Amorphous 无定形的，非晶体的Amplifier功放放大器Analogue(Analog) comparator模拟比较器Angstrom埃Anneal退火Anisotropic各向异性的Anode 阳极Antenna 天线Aperture孔径Arsenide (As)砷Array阵列Atomic原子的Atom Clock原子钟Attenuation 衰减Audio 声频Auger 俄歇Automatic 自动的Automotive 汽车的Availability 适用性Avalanche 雪崩Avalanche breakdown 雪崩击穿Avalanche excitation 雪崩激发Background carrier 本底载流子Background doping 本底混杂Backward 反向Backward bias反向偏置Ball bond球形键合Band 能带Band gap能带空隙Bandwidth带宽Bar 巴条发光条Barrier势垒Barrier layer 势垒层Barrier width 势垒宽度Base 基极Base contact基区接触Base stretching基区扩展效应Base transit time基区渡越时间Base transport efficiency基区输运系数Base-width modulation基区宽度调制Batch批次Battery电池Beam 束光束电子束Bench 工作台Bias 偏置Bilateral switch 双向开关Binary code 二进制代码Binary compound semiconductor 二元化合物半导体Bipolar 双极性的Bipolar Junction Transistor (BJT) 双极晶体管Bit 位比特Blocking band 阻带Body - centered 体心立方Body-centred cubic structure 体立心构造Boltzmann波尔兹曼Bond 键、键合Bonding electron价电子Bonding pad键合点Boron 硼Borosilicate glass硼硅玻璃Bottom-up由下而上的Boundary condition界限条件Bound electron约束电子Bragg effect 布拉格效应Breadboard 模拟板、实验板Break down 击穿Break over 转折Brillouin 布里渊 FBrillouin zone 布里渊区Buffer 缓冲器Built-in 内建的Build-in electric field 内建电场Bulk 体/ 体内Bulk absorption 体汲取Bulk generation 体产生Bulk recombination 体复合Burn-in 老化Burn out 烧毁Buried channel 埋沟Buried diffusion region 隐埋扩散区Bus 总线Calibration校准，检定，定标、刻度，分度Capacitance 电容Capture cross section 俘获截面Capture carrier 俘获载流子Carbon dioxide (CO2) 二氧化碳Carrier 载流子、载波Carry bit 进位位Cascade 级联Case 管壳Cathode 阴极Cavity腔体Center中心Ceramic 陶瓷（的）Channel 沟道Channel breakdown沟道击穿Channel current 沟道电流Channel doping 沟道混杂Channel shortening沟道缩短Channel width沟道宽度Characteristic impedance特点阻抗Charge 电荷、充电Charge-compensation effects电荷赔偿效应Charge conservation电荷守恒Charge drive/exchange/sharing/transfer/storage 电荷驱动/互换/共享/转移/储存Chemical etching 化学腐化法Chemically-Polish 化学抛光Chemically-Mechanically Polish (CMP) 化学机械抛光Chemical vapor deposition (cvd) 化学汽相淀积Chip 芯片Chip yield 芯片成品率Circuit 电路Clamped 箝位Clamping diode 箝位二极管Cleavage plane 解理面Clean 冲洗Clock rate时钟频次Clock generator Clock flip-flop 时钟发生器时钟触发器Close-loop gain 闭环增益Coating 涂覆涂层Coefficient of thermal expansion 热膨胀系数Coherency 相关性Collector 集电极Collision 碰撞Compensated OP-AMP 赔偿运放Common-base/collector/emitter connection 共基极 / 集电极 / 发射极连结Common-gate/drain/source connection 共栅 / 漏/ 源连结Common-mode gain 共模增益Common-mode input 共模输入Common-mode rejection ratio (CMRR) 共模克制比Communication 通讯Compact 致密的Compatibility 兼容性Compensation赔偿Compensated impurities赔偿杂质Compensated semiconductor赔偿半导体Complementary Darlington circuit互补达林顿电路Complementary Metal-Oxide-SemiconductorField-Effect-Transistor(CMOS)互补金属氧化物半导体场效应晶体管Computer-aided design(CAD)/test(CAT)/manufacture(CAM)计算机协助设计/测试/ 制造Component 元件Compound Semiconductor 化合物半导体Conductance 电导Conduction band (edge) 导带(底)Conduction level/state 导带态Conductor 导体Conductivity 电导率Configuration 构造Conlomb 库仑Constants 物理常数Constant energy surface 等能面Constant-source diffusion 恒定源扩散Contact 接触Continuous wave 连续波Continuity equation 连续性方程Contact hole接触孔Contact potential 接触电势Controlled 受控的Converter 变换器Conveyer 传输器Cooling 冷却Copper interconnection system 铜互连系统Corrosion 腐化Coupling 耦合Covalent 共阶的Crossover 交错Critical 临界的Cross-section 横断面Crucible 坩埚Cryogenic cooling system冷却系统Crystal defect/face/orientation/lattice 晶体缺点 / 晶面/晶向/晶格Cubic crystal system立方晶系Current density电流密度Curvature 曲率Current drift/drive/sharing 电流漂移/驱动/ 共享Current Sense 电流取样Curve 曲线Custom integrated circuit 定制集成电路Cut off 截止Cylindrical 柱面的Czochralshicrystal直立单晶Czochralski technique切克劳斯基技术（Cz 法直拉晶体J） )Dangling bonds悬挂键Dark current 暗电流Dead time 空载时间Decade 十进制Decibel (dB) 分贝Decode 解码Deep acceptor level 深受主能级Deep donor level 深施主能级Deep energy level 深能级Deep impurity level 深度杂质能级Deep trap 深圈套Defeat 缺点Degenerate semiconductor简并半导体Degeneracy 简并度Degradation 退化Degree Celsius(centigrade) /Kelvin 摄氏 / 开氏温度Delay 延缓Density 密度Density of states 态密度Depletion 耗尽Depletion approximation 耗尽近似Depletion contact 耗尽接触Depletion depth 耗尽深度Depletion effect 耗尽效应Depletion layer 耗尽层Depletion MOS 耗尽 MOS Depletion region 耗尽区Deposited film 淀积薄膜Deposition process 淀积工艺Design rules 设计规则Detector 探测器Developer 显影剂Diamond 金刚石Die 芯片（复数 dice ）Diode 二极管Dielectric Constant 介电常数Dielectric isolation 介质隔绝Difference-mode input 差模输入Differential amplifier 差分放大器Differential capacitance 微分电容Diffraction 衍射Diffusion 扩散Diffusion coefficient 扩散系数Diffusion constant扩散常数Diffusivity 扩散率Diffusion capacitance/barrier/current/furnace 扩散电容/势垒/电流/炉Digital circuit 数字电路Dimension (1) 尺寸 (2) 量钢 (3) 维，度Diode 二极管Dipole domain 偶极畴Dipole layer 偶极层Direct-coupling 直接耦合Direct transition直接跃迁Directional antenna定向天线Discharge放电Discrete component分立元件Disorder无序的Display显示器Dissipation耗散Dissolution溶解Distribution散布Distributed capacitance散布电容Distributed model散布模型Displacement位移Dislocation位错Domain 畴Donor 施主Donor exhaustion施主耗尽Dopant 混杂剂Doped semiconductor 混杂半导体Doping concentration 混杂浓度Dose 剂量Double-diffusive MOS(DMOS)双扩散MOS Drift 漂移Drift field Drift mobility Dry etching 漂移电场迁徙率干法腐化Dry/wet oxidation干/湿法氧化Dose 剂量Dual-polarization双偏振，双极化Duty cycle工作周期Dual-in-line package（DIP）双列直插式封装Dynamics 动向Dynamic characteristics动向属性Dynamic impedance动向阻抗Early effect厄利效应Early failure初期无效Effect效应Effective mass有效质量Electric Erase Programmable Read Only Memory(E2PROM) 电可擦除只读储存器Electrode电极Electromigration电迁徙Electron affinity电子亲和势Electron-beam电子束Electroluminescence电致发光Electron gas 电子气Electron trapping center 电子俘获中心Electron Volt (eV) 电子伏Electro-optical 光电的Electrostatic 静电的Element元素/元件/配件Elemental semiconductor 元素半导体Ellipse 椭圆Emitter 发射极Emitter-coupled logic 发射极耦合逻辑Emitter-coupled pair 发射极耦合对Emitter follower 射随器Empty band 空带Emitter crowding effect 发射极集边（拥堵）效应Endurance test =life test 寿命测试Energy state 能态Energy momentum diagram 能量 - 动量 (E-K) 图Enhancement mode 加强型模式 EnhancementMOS 加强性 MOS Enteric ( 低 ) 共溶的Environmental test 环境测试Epitaxial 外延的Epitaxial layer Epitaxial slice 外延层外延片Epoxy 环氧的Equivalent circuit 等效电路Equilibrium majority /minority carriers 均衡多半/ 少数载流子Equipment设施Erasable Programmable ROM (EPROM) 可搽取（编程）储存器Erbium laser掺铒激光器Error function complement余偏差函数Etch刻蚀Etchant刻蚀剂Etching mask Excess carrier 抗蚀剂掩模节余载流子Excited state 激发态Exciton 激子Exponential 指数的Extrapolation 外推法Extrinsic 非本征的Extrinsic semiconductor 杂质半导体Fabry-Perot amplifier 法布里 - 珀罗放大器Face - centered 面心立方Fall time 降落时间Fan-in 扇入Fan-out 扇出Fast recovery 快恢复Fast surface states 快表面态Feedback 反应Fermi level 费米能级Femi potential 费米势Fiber optic 光纤Field effect transistor 场效应晶体管Field oxide 场氧化层Figure of merit 质量因数Filter 滤波器Filled band 满带Film 薄膜Fine pitch 细节距Flash memory 闪存储存器Flat band 平带Flat pack 扁平封装Flatness 平坦度Flexible 柔性的Flicker noise 闪耀（变）噪声Flip-chip 倒装芯片Flip- flop toggle 触发器翻转Floating gate 浮栅Fluoride etch 氟化氢刻蚀Focal plane焦平面Forbidden band禁带Formulation列式，表达Forward bias正向偏置Forward blocking /conductingFree electron自由电子Frequency deviation noise正向阻断频次漂移噪声/ 导通Frequency response频次响应Function函数Gain 增益Gallium-Arsenide(GaAs)砷化镓Gallium Nitride氮化镓Gate 门、栅、控制极Gate oxide 栅氧化层Gate width 栅宽Gauss（ian ）高斯Gaussian distribution profile高斯混杂散布Generation-recombination产生-复合Geometries几何尺寸Germanium(Ge) 锗Gold 金Graded 缓变的Graded (gradual) channel 缓变沟道Graded junction 缓变结Grain 晶粒Gradient 梯度Graphene 石墨烯Grating 光栅Green laser 绿光激光器Ground 接地Grown junction 生长结Guard ring 保护环Guide wave 导波波导Gunn - effect 狄氏效应Gyroscope 陀螺仪Hardened device 辐射加固器件Harmonics 谐波Heat diffusion 热扩散Heat sink 散热器、热沉Heavy/light hole band 重/ 轻空穴带Hell - effect 霍尔效应Hertz 赫兹Heterojunction 异质结Heterojunction structure 异质结构造Heterojunction Bipolar Transistor（HBT）异质结双极型晶体High field property高场特征High-performance MOS(H-MOS) 高性能 MOS器件High power 大功率Hole 空穴Homojunction 同质结Horizontal epitaxial reactor 卧式外延反响器Hot carrier 热载流子Hybrid integration 混淆集成Illumination (1) 照明 (2) 照明学Image - force 镜象力Impact ionization 碰撞电离Impedance 阻抗Imperfect structure 不完好构造Implantation dose 注入剂量Implanted ion 注入离子Impurity 杂质Impurity scattering 杂志散射Inch 英寸Incremental resistance电阻增量（微分电阻）In-contact mask接触式掩模Index of refraction 折射率Indium 铟Indium tin oxide (ITO) 铟锡氧化物Inductance 电感Induced channel 感觉沟道Infrared 红外的Injection 注入Input power 输入功率Insertion loss 插入消耗Insulator 绝缘体Insulated Gate FET(IGFET) 绝缘栅 FET Integrated injection logic 集成注入逻辑Integration 集成、积分Integrated Circuit 集成电路Interconnection 互连Interconnection time delay 互连延时Interdigitated structure 交互式构造Interface 界面Interference 干预International system of unions 国际单位制Internally scattering 谷间散射Interpolation 内插法Intrinsic 本征的Intrinsic semiconductor 本征半导体Inverse operation 反向工作Inversion 反型Inverter 倒相器Ion 离子Ion beam 离子束Ion etching 离子刻蚀Ion implantation 离子注入Ionization 电离Ionization energy 电离能Irradiation 辐照Isolation land隔绝岛Isotropic 各向同性Junction FET(JFET) 结型场效应管Junction isolation 结隔绝Junction spacing 结间距Junction side-wall 结侧壁Laser 激光器Laser diode激光二极管Latch up闭锁Lateral横向的Lattice 晶格Layout 疆域Lattice binding/cell/constant/defect/distortion 晶格结协力 /晶胞/ 晶格 / 晶格常熟 / 晶格缺点 / 晶格畸变Lead 铅Leakage current （泄）漏电流Life time 寿命linearity 线性度Linked bond 共价键Liquid Nitrogen 液氮Liquid －phase epitaxial growth technique 液相外延生长技术Lithography 光刻Light Emitting Diode(LED) 发光二极管Linearity 线性化Liquid 液体Lock in 锁定Longitudinal纵向的Long life长寿命Lumped model 集总模型Magnetic磁的Majority carrier多半载流子Mask 掩膜板，光刻板Mask level掩模序号Mask set掩模组Mass - action law质量守恒定律Master-slave D flip-flop主从D 触发器Matching般配Material资料Maxwell麦克斯韦Mean free path均匀自由程Mean time before failure (MTBF)均匀工作时间Mechanical机械的Membrane (1) 薄腊，膜片 (2) 隔阂Megeto - resistance磁阻Mesa 台面MESFET-Metal Semiconductor金属半导体FET Metalorganic Chemical Vapor Deposition MOCVD 金属氧化物化学汽相淀积Metallization金属化Metal oxide semiconductor (MOS)金属氧化物半导体MeV 兆电子伏Microelectronic technique 微电子技术Microelectronics微电子学Microelectromechanical System (MEMS)微电子机械系统Microwave微波Millimeterwave毫米波Minority carrier少量载流子Misfit失配Mismatching失配Mobility迁徙率Module 模块Modulate 调制Molecular crystal 分子晶体Monolithic IC 单片MOSFET金属氧化物半导体场效应晶体管Mount 安装Multiplication倍增Modulator调制Multi-chip IC多芯片ICMulti-chip module(MCM)多芯片模块Multilayer多层Multiplication coefficient倍增因子Multiplexer复用器Multiplier倍增器Naked chip 未封装的芯片（裸片）Nanometer 纳米Nanotechnology 纳米技术Negative feedback 负反应Negative resistance 负阻Negative-temperature-coefficient 负温度系数Nesting 套刻Noise figure 噪声系数Nonequilibrium 非均衡Nonvolatile 非挥发（易失）性Normally off/on 常闭/开Nuclear 核Numerical analysis 数值剖析Occupied band 满带Offset 偏移、失调On standby 待命状态Ohmic contact 欧姆接触Open circuit 开路Operating point 工作点Operating bias 工作偏置Operational amplifier (OPAMP) 运算放大器Optical photon 光子Optical quenching 光猝灭Optical transition 光跃迁Optical-coupled isolator 光耦合隔绝器Organic semiconductor 有机半导体Orientation 晶向、定向Oscillator 振荡器Outline 外形Out-of-contact mask 非接触式掩模Output characteristic 输出特征Output power 输出功率Output voltage swing 输出电压摆幅Overcompensation 过赔偿Over-current protection 过流保护Over shoot 过冲Over-voltage protection 过压保护Overlap 交迭Overload过载Oscillator振荡器Oxide氧化物Oxidation氧化Oxide passivation氧化层钝化Package 封装Pad 压焊点Parameter 参数Parasitic effect 寄奏效应Parasitic oscillation 寄生振荡Pass band 通带Passivation 钝化Passive component 无源元件Passive device 无源器件Passive surface 钝化界面Parasitic transistor 寄生晶体管Pattern 图形Payload 有效载荷Peak-point voltage 峰点电压Peak voltage 峰值电压Permanent-storage circuit 永远储存电路Period 周期Permeable - base 可浸透基区Phase-lock loop 锁相环Phase drift 相移Phonon spectra 声子谱Photo conduction 光电导Photo diode 光电二极管Photoelectric cell 光电池Photoelectric effect 光电效应Photonic devices 光子器件Photolithographic process 光刻工艺Photoluminescence 光致发光Photo resist （光敏）抗腐化剂Photo mask 光掩模Piezoelectric effect 压电效应Pin 管脚Pinch off 夹断Pinning of Fermi level 费米能级的钉扎（效应）Planar process 平面工艺Planar transistor 平面晶体管Plasma 等离子体Plane 平面的Plasma 等离子体Plate 板电路板P-N junction pn 结Poisson equation 泊松方程Point contact 点接触Polarity 极性Polycrystal 多晶Polymer semiconductor聚合物半导体Poly-silicon多晶硅Positive 正的Potential ( 电 ) 势Potential barrier 势垒Potential well 势阱Power electronic devices 电力电子器件Power dissipation功耗Power transistor 功率晶体管Preamplifier 前置放大器Primary flat 主平面Print-circuit board(PCB) 印制电路板Probability 几率Probe 探针Procedure 工艺Process 工艺Projector 投影仪Propagation delay传输延时Proton质子Proximity effect周边效应Pseudopotential method赝势法Pump 泵浦Punch through 穿通Pulse triggering/modulating 脉冲触发 / 调制Pulse Widen Modulator(PWM) 脉冲宽度调制Punchthrough 穿通Push-pull stage 推挽级Q Q 值Quality factor 质量因子Quantization 量子化Quantum 量子Quantum efficiency 量子效应Quantum mechanics 量子力学Quasi – Fermi －level 准费米能级Quartz 石英Radar 雷达Radiation conductivity 辐射电导率Radiation damage 辐射损害Radiation flux density 辐射通量密度Radiation hardening 辐射加固Radiation protection 辐射保护Radiative - recombination 辐照复合Radio 无线电射电射频Radio-frequency RF射频Raman 拉曼Random 随机Range 测距Radio比率系数Ray 射线Reactive sputtering source 反响溅射源Real time 及时Receiver 接收机Recombination 复合Recovery diode 恢复二极管Record 记录Recovery time 恢复时间Rectifier 整流器（管）Rectifying contact 整流接触Red light 红光Reference 基准点基准参照点Refractive index 折射率Register 存放器Regulate 控制调整Relative 相对的Relaxation 驰豫Relaxation lifetime 驰豫时间Relay中继Reliability靠谱性Remote 远程Repeatability 可重复性Reproduction 重复制造Residual current 节余电流Resonance 谐振Resin 树脂Resistance 电阻Resistor 电阻器Resistivity 电阻率Regulator 稳压管（器）Resolution 分辨率Response time 响应时间Return signal 回波信号Reverse 反向的Reverse bias 反向偏置Ribbon 光纤带Ridge waveguide脊形波导Ring laser环形激光器Rotary wave旋转波Run 运转Sampling circuit取样电路Sapphire 蓝宝石（ Al2O3）Satellite valley 卫星谷Saturated current range电流饱和区Scan 扫描Scaled down 按比率减小Scattering 散射Schematic layout 表示图，简图Schottky 肖特基Schottky barrier 肖特基势垒Schottky contact 肖特基接触Screen 挑选Scribing grid 划片格Secondary flat 次平面Seed crystal 籽晶Segregation 分凝Selectivity 选择性Self aligned 自瞄准的Self diffusion 自扩散Semiconductor 半导体Semiconductor laser 半导体激光器Semiconductor-controlled rectifier 半导体可控硅Sensitivity 敏捷度Sensor 传感器Serial 串行/串连Series inductance 串连电感Settle time 成即刻间Sheet resistance薄层电阻Shaping 成型Shield 障蔽Shifter 移相器Short circuit 短路Shot noise 散粒噪声Shunt 分流Sidewall capacitance 边墙电容Signal 信号Silica glass 石英玻璃Silicon 硅Silicon carbide 碳化硅Silicon dioxide (SiO2) 二氧化硅Silicon Nitride(Si3N4) 氮化硅Silicon On Insulator 绝缘体上硅Silver whiskers 银须Simple cubic 简立方Simulation 模拟Single crystal 单晶Sink 热沉Sinter 烧结Skin effect 趋肤效应Slot 槽隙Slow wave 慢波Smooth 圆滑的Subthreshold 亚阈值的Solar battery/cell 太阳能电池Solid circuit 固体电路Solid Solubility 固溶度Solution 溶液Sonband 子带Source 源极Source follower源随器Space charge Space Craft空间电荷宇宙飞翔器Spacing间距Specific heat(PT)比热Spectral光谱Spectrum光谱(复数)Speed-power product速度功耗乘积Spherical球面的Spin自旋Split分裂Spontaneous emission自觉发射Spot 斑点Spray 喷涂Spreading resistance 扩展电阻Sputter 溅射Square root 平方根Stability 稳固性Stacking fault 层错Standard 标准的Standing wave 驻波State-of-the-art最新技术Static characteristic 静态特征Statistical analysis 统计剖析Steady state 稳态Step motor 步进式电动机Stimulated emission 受激发射Stimulated recombination 受激复合Stopband 阻带Storage time 储存时间Stress应力Stripline带状线Subband 次能带Sublimation升华Submillimeter亚毫米波Substrate衬底Substitutional Superconductor Superlattice替位式的超导(电)体超晶格Supply 电源Surface mound Surge capacity Switching time 表面安装浪涌能力开关时间Switch 开关Synchronizer同步器，同步装置Synthetic-aperture合成孔径System 系统Technical技术的，工艺的Telecommunication远距通讯，电信Telescope望远镜Terahertz太赫兹Terminal终端Template模板Temperature 温度Tensor 张量Test 测试试验Thermal activation 热激发Thermal conductivity 热导率Thermal equilibrium 热均衡Thermal Oxidation 热氧化Thermal resistance 热阻Thermal sink 热沉Thermal velocity 热运动Thick- film technique 厚膜技术Thin- film hybrid IC 薄膜混淆集成电路Thin-Film Transistor(TFT) 薄膜晶体Three dimension 三维Threshold 阈值Through Silicon Via 硅通孔Thyistor 晶闸管Time resolution 时间分辨率Tolerance 公差T/R module 发射 / 接收模块Transconductance 跨导Transfer characteristic 转移特征Transfer electron 转移电子Transfer function 传输函数Transient 瞬态的Transistor aging(stress) 晶体管老化Transit time 渡越时间Transition 跃迁Transition-metal silica 过分金属硅化物Transition probability 跃迁几率Transition region 过渡区Transmissivity 透射率Transmitter 发射机Transceiver 收发机Transport 输运Transverse 横向的Trap 圈套Trapping 俘获Trapped charge 圈套电荷Travelling wave 行波Trigger 触发Trim 分配调整Triple diffusion三重扩散Tolerance容差Tube 管子电子管Tuner调理器Tunnel(ing)地道（穿）Tunnel current 地道电流Turn - off time 关断时间Ultraviolet紫外的Ultrabright超亮的Ultrasonic超声的Underfilling下填补Undoped 无混杂Unijunction单结的Unipolar单极的Unit cell原（元）胞Unity- gain frequency单位增益频次Unilateral-switch单向开关Vacancy 空位Vacuum 真空Valence(value) band价带Value band edge价带顶Valence bond价键Vapour phase汽相Varactor变容管Variable可变的Vector矢量Vertical垂直的Vibration振动Visible light可见光Voltage电压Volt伏特Wafer 晶片Watt瓦Wave guide波导Wavelength波长Wave-particle duality波粒二相性Wear-out烧毁Wetting浸润Wideband 宽禁带Wire 引线Wire routing Work function 布线功函数Worst-case device最坏状况器件X-ray X射线Yield成品率Zinc锌。

BI@ZIF-8

表面技术第53卷第8期轴向应变作用下含腐蚀缺陷X80管道氢渗透的有限元分析刘韦辰1,2，韦博鑫1,2*，尹航1,2，许进1,2，于长坤1，孙成1,2（1.中国科学院金属研究所辽宁沈阳土壤大气环境材料腐蚀国家野外科学观测研究站，沈阳 110016；2.中国科学技术大学材料科学与工程学院，沈阳 110016）摘要：目的研究在役天然气管道掺氢输送条件下氢原子在管道腐蚀缺陷处的扩散和分布情况及应变对腐蚀缺陷处氢扩散行为的影响。

方法利用COMSOL软件，将固体力学模型和扩散模型相结合，建立了基于有限元的氢原子扩散渗透模型，研究了在纵向拉伸应变作用下X80钢制管道不同尺寸腐蚀缺陷处氢原子的分布情况。

结果在没有拉伸应变的情况下，氢原子一旦进入管道内，在浓度梯度的驱动下，沿径向梯度扩散到管道内。

当在管道上施加应变时，氢原子的扩散受到静水应力的驱动。

氢原子在腐蚀缺陷处的最大浓度超过了进入管道的氢原子初始浓度。

结论氢原子在腐蚀缺陷处聚集。

此外，施加的拉伸应变也影响氢原子聚集的位置，随着缺陷长度的减小和深度的增大，在内壁腐蚀缺陷处，更多的氢原子会集中在缺陷中心和尖端。

关键词：X80管道；氢扩散；腐蚀缺陷；应变；有限元模拟；点蚀中图分类号：TE832 文献标志码：A 文章编号：1001-3660(2024)08-0084-09DOI：10.16490/ki.issn.1001-3660.2024.08.008Finite Element Analysis of Hydrogen Permeation in X80Pipeline with Corrosion Defects under Axial StrainLIU Weichen1,2, WEI Boxin1,2*, YIN Hang1,2, XU Jin1,2, YU Changkun1, SUN Cheng1,2(1. Liaoning Shenyang Soil and Atmosphere Corrosion of Material National Observation and Research Station,Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China; 2. School of Materials Science and Engineering, University of Science and Technology of China, Shenyang 110016, China)ABSTRACT: One potential issue in using existing natural gas pipelines to transport hydrogen in the form of hydrogen blending natural gas is hydrogen damage of high-strength pipeline steel. The hydrogen damage of pipelines is closely related to the diffusion and trapping of hydrogen atoms in pipeline steel. The diffusion and distribution of hydrogen atoms at corrosion defects in in-service natural gas pipelines under the condition of hydrogen blending transportation, and the effect of strain on hydrogen diffusion behavior at corrosion defects are unclear. In this paper, a hydrogen atoms diffusion model was established based on the finite element method by COMSOL software to combine the solid mechanics model and the diffusion model. The distribution of收稿日期：2023-05-31；修订日期：2023-09-26Received：2023-05-31；Revised：2023-09-26基金项目：国家自然科学基金（51871228）；中国科学院金属研究所创新基金（2023-PY12）Fund：National Natural Science Foundation of China (51871228); Innovation Fund of Institute of Metals Research, Chinese Academy of Sciences (2023-PY12)引文格式：刘韦辰, 韦博鑫, 尹航, 等. 轴向应变作用下含腐蚀缺陷X80管道氢渗透的有限元分析[J]. 表面技术, 2024, 53(8): 84-92.LIU Weichen, WEI Boxin, YIN Hang, et al. Finite Element Analysis of Hydrogen Permeation in X80 Pipeline with Corrosion Defects under Axial Strain[J]. Surface Technology, 2024, 53(8): 84-92.*通信作者（Corresponding author）第53卷第8期刘韦辰，等：轴向应变作用下含腐蚀缺陷X80管道氢渗透的有限元分析·85·hydrogen atoms at different sizes of corrosion defects in X80 pipelines under longitudinal tensile strain was studied. The mechanical curve of X80 steel was obtained through experiments before modeling. This article adopted the Ramberg-Osgood (R-O) relationship for X80 steel in order to obtain better computational efficiency and accuracy, and to better describe the nonlinear mechanical properties of the material. For further analyzing the effect of strain on the hydrogen atom diffusion at the corrosion defect, a geometric model containing corrosion defects on the inner wall of the pipeline was established, in which the thickness of the pipeline wall was 12.7 mm and the length of the pipeline section was 3 000 mm. For boundary conditions, assuming that no hydrogen atoms initially entered the steel, the initial diffusion surface was the interface between hydrogen and the inner surface of the pipeline (i.e. the inner wall of the pipeline), and the initial diffusion hydrogen atom concentration was10 mol/m3. The loads were 0%, 0.1%, 0.2%, 0.3%, 0.5%, 0.8%, and 1% longitudinal tensile strains to simulate the effect ofground motion. The local strain at the corrosion defect was variable. Afterwards, the grid was divided and solved using the direct solver MUMPS. Analyzing the results could lead to the following conclusions: under the free state, once hydrogen atoms entered the steel, they would diffuse radially driven by concentration gradients. When the pipeline suffered from the strain, the diffusion of hydrogen atoms was driven by hydrostatic stress. The maximum concentration of hydrogen atoms at the corrosion defect exceeded the initial concentration of hydrogen atoms, indicating that the hydrogen atoms accumulated at the corrosion defect. For the corrosion defects on the inner wall of the pipeline, the application of tensile strain would greatly change the distribution of hydrogen atoms in the pipeline. The maximum concentration of hydrogen atoms always occurred near the center of the corrosion defect and near the outer wall of the pipeline, while the concentration of hydrogen atoms was lower in other areas of the pipeline. As the length of the inner wall corrosion defect decreased and the depth increased, more hydrogen atoms concentrated at the center and tip of the corrosion defect. When the depth of the defect was constant, the accumulation of hydrogen atoms at the corrosion defects on the inner wall of the pipeline became more and more obvious as the length of the defect decreased. In other words, narrow corrosion defects tended to aggregate more hydrogen atoms. Similarly, when the defect length was constant, the concentration of hydrogen atoms increased as the corrosion defect deepened.KEY WORDS: X80 pipelines; hydrogen atom diffusion; corrosion defect; strain; finite element modeling; pitting氢能作为一种洁净能源，在世界各国能源转型中的应用价值日益突显，同时，也是我国实现“碳达峰、碳中和”目标的重要能源载体[1-2]。

机械密封各个类型的英文表达方式

我这里列出了34个机械密封分类术语1. 机械端面密圭寸-mechanical face seal2. 流体动压式机械密圭寸-hydrodynamic mechanical seal3. 切向作用流体动压式机械密圭寸-tangential acting hydrodyna mic mecha ni cal seal4. 径向作用流体动压式机械密圭寸-radial acting hydrodynami c mecha ni cal seal5. 流体静压式机械密圭寸-hydrostatic mechanical seal6. 外加压流体静压式机械密圭寸-outside pressurized hydrostat ic mecha ni cal seal7. 自加压流体静压式机械密圭寸-self pressurized hydrostatic m echa ni cal seal8. 非接触式密圭寸-non contacting (free contacting) mechani cal seal9. 内装式机械密圭寸-internally mounted mechanical seal10. 夕卜装式机械密圭寸-externally mounted mechanical seal11. 弹簧内置式机械密圭寸-mecha nical seal with in side mou nt ed spri ng12. 弹簧外置式机械密圭寸-mechanical seal with outside mou n ted spri ng13. 背面高压式机械密圭寸-mecanical seal with high back pres sure14. 背面低压式机械密圭寸-mechanical seal with low back pre ssure15. 内流式机械密圭寸-mecha ni cal seal with in ward leakage16. 夕卜流式机械密圭寸-mechanical seal with outward leakage17. 弹簧旋转式机械密圭寸-spring rotating mechanical seal18. 弹簧静止式机械密圭寸-spring standing mechanical seal19. 单弹簧式机械密圭寸-single-spring mechanical seal20. 多弹簧式机械密圭寸-multiple-spring mechanical seal21. 非平衡式机械密圭寸-unbalaneed mechanical seal22. 平衡式机械密圭寸-balaneed mechanical seal23. 单端面机械密圭寸-single mechanical seal24. 双端面机械密圭寸-double mechanical seal25. 轴向双端机械密圭寸-axial double mechanical seal26. 径向双端面机械密圭寸-radial double mechanical seal27. 串联机械密圭寸-tandem mechanical seal28. 橡胶波纹管机械密圭寸-rubber-bellows mechanical seal29. 聚四氟乙烯波纹管机械密圭寸-PTFE-bellows mechanical se al30. 金属波纹管机械密圭寸-l bellows mechanical seal31. 焊接金属波纹管机械密圭寸-welded l bellows mechanical s eal32. 压力成型金属波纹管机械密圭寸-formed l bellows mechanical seal33. 带浮动间隔环的机械密封-mechanical seal with floating i ntermediate ring34. 磁力机械密封-magnetic mechanical seal机械密封零件术语的常用词汇 ..1. sealing ring -- 密封环2. seal face-- 密封端面3. seal interface-- 密封界面4. rotating ring-- 动环/ 旋转环5. stationary ring-- 静环/ 静止环6. compensated ring-- 补偿环7. un-compensated ring-- 非补偿环8. seal head-- 补偿环组件9. primary seal-- 主密封10. secondary seal-- 副密封11. auxiliary seal-- 辅助密封12. auxiliary seal ring-- 辅助密封圈13. bellows-- 波纹管14. pushing out ring-- 撑环15. back-up ring-- 挡圈16. compensated ring adaptor-- 补偿环座17. un-compensated ring adaptor-- 非补偿环座18. spring adaptor-- 弹簧座19. seal adaptor-- 波纹管座20. retainer-- 传动座21. driving screw-- 传动螺钉22. set screw-- 紧定螺钉23. snap ring-- 卡环24. clamp ring-- 夹紧环25. anti-rotating pin-- 防转销26. annular seal space-- 密封腔27. seal chamber-- 密封腔体28. end cover-- 密封端盖29. elastic component-- 弹性元件30. a pair of friction components-- 摩擦副个人常用机械密封专有词汇inner circulation-- 内循环outer circulation-- 外循环self circulation-- 自循环flush-- 冲洗flush fluid-- 冲洗流体quench-- 阻封quench fluid-- 阻封流体buffer fluid-- 隔离流体temperature adjustable fluid-- 调温流体coolant-- 冷却流体heating fluid-- 加热流体sealed medium-- 被密封介质sealant-- 密封流体pv --pv 值（密封流体压力P 与密封端面平均滑动速度V 的乘积）limiting pv -- 密封达到失效时的PV 值. 它表示密封的水平working pv -- 极限PV 值除以安全系数PcV-- 端面比压Pc 与密封端面平均滑动速度V 的乘积limiting PcV -- 密封达到失效时的PcV 值. 它表示密封材料的工作能力working PcV -- 许用PcV 值.极限PcV 值除以安全系数leakage rate-- 泄漏量run out-- 跳动wear rate-- 磨损率operating life-- 工作寿命operating period-- 使用期abortive failure-- 早期失效Operating limits: 工作参数Speed/velocity: 转速Combination of material: 材料组合Halted ring: 弹簧挡圈Bellows: 波纹管Retainer: 传动套，传动座Drive ring: 压圈Cup gasket: 静环套Spring retainer: 弹簧座O-ring: O 形圈Tension spring: 拉簧Stationary seat: 静环形式/ 静环基座Rotary seat: 动环座Drive screw: 传动螺钉Wave spring/Bellow spring: 波形弹簧Rotary o-ring: 动环O 形圈Stationary o-ring: 静环O 形圈Collar: 定位套Snap ring/clamp ring: 卡环Disc/thrust ring: 止推环Wedge ring: 楔形环Mating ring: 静止环/ 静环Primary ring: 动止环/ 动环Inventory: 存货Agitator: 搅拌器Cryogenics: 低温学Mixer: 搅拌机Refinery: 炼油Petrochemical: 石化Pulp: 纸浆Paramecia: 配药Desalination: 脱盐Wastewater: 污水Impeller: 叶轮Fit: 安装Lead: 石墨，铅Edge: 边缘Grade: 等级Secondary sealing element: 辅助密封材质Hydrostatic: 流体静力学的Cross-section: 横截面Material code: 材料代码Seal size: 密封轴径尺寸Assembly number: 装配代码Sulphuric: 硫酸Nitric acid: 销酸Phosphoric acid: 磷酸Hydrochloric: 盐酸PV—pressure/velocity: 压力与转速RS —rotating seat: 动环座Multiplier: 增效器TC —tungsten carbide: 硬质合金Pin: 销Engage: 接合, 啮合Pro 剖面/ 侧面Adapter: 适配器Titled: 倾斜的Weld/welt: 焊接Nested: 嵌套的, 镶装的Configuration: 配置, 构造Axial: 轴向的,轴的Working height/length: 工作高度Tolerance: 公差,容差Operating pressure: 工作压力FIM —full indicator movement:Lubricity: 光滑Gravity: 重力Face material: 密封面材料Insert/shrink-fitted: 镶装的Primary ring adapter: 动环座Mating ring adapter: 静环座Delivery period: 交货期Set screw: 固定螺钉Cap screw: 帽螺钉Gland: 填料函盖Drive retainer: 传动套Plate: 镀金Gland plate: 密封座Mean time: 平均时Durability: 耐用性Thrust ring: 推环Clamp ring: 卡环Eccentricity: 偏心率/ 度, 偏心距Deflection: 偏斜,偏差Runout: 偏转, 溢流Pilot pins: 定位销Bolt: 螺栓Screw: 螺钉Nut: 螺母Washer: 垫圈Pin: 销Rivet: 铆钉Anchor: 壁虎Machine screw: 机械螺钉Wooden screw: 木螺钉Threaded rod 螺杆Wire rope clamps: 玛卡Hex head pipe plugs: 六角形螺塞Phillip: 十字槽Spring-loaded pluger: 弹簧销Hex head: 六角形头Flange: 法兰Seal component materials: 密封材料成分Secondary sealing element: 辅助密封材料Primary ring: 动环Mating ring: 静环Hardware: 结构件Mechanical loading device (spring): 弹簧材料Ovality: 椭圆Letter of intent: 意向书Rotary ring is whole part or shrink-fitted: 动环是整体还是镶装的Leaf: 金属薄片End play: 轴向间隙Pad: 衬垫Asymmetric: 不对称的Seal adapter: 密封座Tandem: 前后的，串联的Inlet: 进口Outlet: 出口Inboard: 内侧/ 介质端Outboard: 外侧/大气端Convection: 传送，对流Port: 端口，Slot: 狭槽Reducing agent: 还原剂Notch: 槽口，凹口Band: 镶边Clogging: 堵塞Tune:（弹簧）圈数Foul: 淤塞Flatness: 平面度Downtime: 检修时间Alternative methods: 替代方法Wear ring: 磨损环Torsion: 扭距Cast: 铸件Confining: 狭窄的Spring seat: 弹簧座Plug-proof: 防转销Drive ring: 推环Push ring: 推环Halted ring: 挡圈Cup gasket: 静环套Rotary ring holder/adapter/carrier: 动环座Axial pipe: 轴套Drive ring/plunger collar: 压圈Spring retainer/seat: 弹簧座Impeller: 叶轮Outside cup gasket: 静环外套Inside cup gasket: 动环内套Spring holder: 弹簧垫Seal ring: 密封环work: 骨架Square ring: 方型圈Wave spring: 波形弹簧Cylinder spring: 圆柱弹簧Coil spring: 锥形弹簧Integral seal case: 整体密封盒Purity: 纯度Density: 密度HS —hardness: 硬度Tensile strength: 抗拉强度Bending strength: 抗弯强度Compression strength: 抗压强度Thermal conductivity: 传热导系数Coefficient of thermal expansion: 热膨胀系数Heat resistance: 耐热Thermal impact coefficient: 热冲击系数Acid resistance: 耐酸Medium: 介质Porosity: 显气孔率Rockwell hardness: 洛式硬度Breaking strength: 抗析强度Stability of thermal vibration: 抗震稳定性Optical flatness: 工作面平整度Roughness: 粗糙度Lightbrand: 光带Classification: 分类Model: 型号Thore hardness: 肖氏硬度Feature: 特性Stamping: 冲压Lobe pump: 凸轮泵Step: 台阶Crevice: 裂缝Crack: 裂纹Anticlockwise: 逆时针Clockwise: 顺时针Labyrinth seals: 迷宫式密封Torque: 扭矩Throttle: 节流圈/ 节流阀Bushing: 轴衬Bearing: 轴承Sealant: 密封剂Pitch: 螺距,节距Depth: 深度Stuffing: 填塞料BDC-bolt circle pitch diameter 中心距EMS:express mail service 邮政快递Thrust plate: 止推板Surface finish: 表面抛光End-fittings: 端面安装Spare pats: 配件Split seals: 剖分式密封Running account: 往来帐户NPT:normal pressure and temperature 常温常压Thread: 螺纹Cushion: 衬垫Pneumatics: 气体力学GmbH —Gesellschaftmit beschrankter Hafltung 股份有限公司（德国）Electropolish 电解法抛光CAM —computer aided manufacturing 计算机辅助设计c/w: complete with 包括;caution/warning 小心与警告ASTM:American society of testing material 美国试验材料协会Squareness: 垂直度Concentric circle : 同心圆Credit note/debit note/payment slip: 银行水单EDGE: electronic data gathering equipment 电子数据采集设备Cavity: 凹口/槽Proprietary design: 专有设计TIR —total indicator reading 指针读数TIR —temperature indicator recorder 温度指示记录器Abutment: 邻接,接合齿Melting point: 熔点Boiling point: 沸点Automatic lathes: 车床Groove: 凹槽，开槽于Chamfer: 倒角Bottom chamfer 背倒角:CC: center line 中心线Thru: 穿过Wire DIA: 丝径Free length: 自由高度Type of ends —close ground: 拼圈Conversion sheet: 换算表General speaking: stationary seat should be harder tha n the rotary facePolypropylene: 聚丙烯Polyethylene: 聚乙烯PTFE—polytetrafluoroethylene 聚四氟乙稀PVC: 聚氯乙稀PVDF-polyvinylidene fluoride 聚偏氟乙稀CTFE-chlorotrifluor ethylene 三氟氯乙稀Consolidated shipment: 合并装运Polishing: 抛光Smoothness: 光滑Flatness: 平面度Roughness: 粗糙度Impurity: 杂质Bubble: 气泡Defect/flaw: 缺陷Surface: 表面Air hole/pore 气孔:Burr: 毛刺Nick: 划痕Thick: 厚Thin: 薄Spot welding: 点焊Fastness: 牢固Distortion/transfiguration: 变形Brightness/lucency polishing: 光亮抛光Matted polishing: 暗淡抛光Rockwell hardness: 洛氏硬度Shaw hardness: 肖氏硬度Luster: 光泽WRT:with regard toLatex paint 乳胶涂料:England-U.Krussian-Ru german-DE French-FR Spanish-ES Greek-GR Italian-IT United states-U.S.A Welt/brazed: 焊接的Tandem arrangement: 串联式Back-to-back arrangement: 背对背式Fitting length: 安装长度Tolerance: 容差Axial movement: 轴向窜动量Torque transmission: 扭矩传递Operating limits 运行范围:Seal face: 动环Stationary seat: 静止环Drive key: 键驱动Nut: 螺母/ 螺帽Screw: 螺钉Pin: 销Bolt: 螺栓Operating temperature: 运行温度Right-handed (RH) screw: 右旋螺钉Left-handed (LH) screw: 左旋螺钉Screw thread: 螺纹Screw thread groove: 螺纹槽Screw type: 螺纹型Spiral/helix: 螺旋Cash remittance: 汇款单Cutaway: 剖视图GB-Guobiao: 我国国家标准Abmessung: dimensionSiliziumkarbid: silicon carbideFeder: springKeramic: ceramicTack weld: 间断焊Carrier: 支座,托架Keyway: 键槽Undercut: 底切Washer: 垫圈Tooling charge / modeling charge: 开模费RH —rockwell hardness / right hand 洛氏硬度/ 右旋Pitch of screw: 螺距GP-general purpose: 普通箱CBM-cubic meter: 立方米MT-metric ton 公吨HC-high cubic 高箱Freight prepaid: 运费预付Freight collect: 运费到付House B/L: 分提单（由货代开出）Ocean B/L: 总提单（般公司开出）SWBL-sea waybill: 海运单AWBL-air waybill: 空运单B/N: 货物单S/O: 装运单D/R: 场站收据CLP: 装箱单D/O: 提货单（dispatch/order）Surcharge: 附加费Bunker surcharge:: 燃油附加费B.A.F —bunker adjustment factor: 燃油附加费CY-container yard: 集装箱堆场CFS-container freight station:: 集装箱货运站（处理拼箱货的场所）TEU-twenty-feet equivalent unit: 集装箱计算单位FCL-full container load 整箱货LCL-less than container 拼箱货Slot number: 箱位号集装箱0402D1 含义如下: 04-bay number 排号（横号）02:row number 行号D1:river numberD —在甲板上; H —在舱内C.C —collect 到付P.P—prepaid 预付INCOTERMS 2000-International Rules for the Interpretat ion of trade terms 2000 年国际贸易术语解释通则Carbon steel: 碳钢Rpm: round per minute / revolutions per minute 每分钟转数Sliding surface: 滑动面积RA-remedial action 矫正措施. restricted areas 受限区域性; remittance advice 汇款通知Ra-Rate of appearance 外观等级Perpendicularity: 垂直度Clearance: 间隙Counterface: 对立面Retain:护圈，挡板Nano meter( nmgates橡胶英语翻译[color=blue][size=4]纺丝spinning 干纺dry spinning 湿纺wet spinning干湿法纺丝dry wet spinning 干喷法纺丝dry jet wet spinning 溶液纺丝solution spinning 孚L液纺丝emulsion spinning 孚L液闪蒸纺丝法emulsio n spinning 喷射纺丝jet spinning 喷纺成形spay spinning 液晶纺丝liquid crystal spinning 熔纺melt spinning 共混纺丝blended spinning 凝胶纺丝gel spinning 反应纺丝reaction spinning 静电纺丝electrostatic spinning 高压纺丝high-pressure spinning 复合纺丝conjugate spinning 无纺布monofilament/ monofil 单丝multifilament 全取向丝fully oriented yarn 中空纤维hollow fiber 皮芯纤维sheath core fiber 共纺cospinning 冷拉伸cold drawing/ cold stretching 单轴拉伸uniaxial drwaing/ uniaxial elangation 双轴拉伸biaxial drawing 皮心效应skin and core effect 皮层效应skin effect 防缩non-shrink 熟成ripening 垂挂sag 定型sizing 起球现象pilling effect 捻度twist 旦denier 特tex 纱yarn 股strand 粘合adhesion 反应粘合reaction bonding 压敏粘合pressure sensitive adhesion 底漆primer 浸渍impregnation 浸渍树脂sovent impregnated resin 基体matrix 聚合物表面活性剂polymetic surfacta nt 高分子絮凝剂polymeric surfacta nt 预发颗粒pre-expanded bead 高分子膜polymeric membrane H-膜H-filmLB 膜Iangmuir blodgett film (LB film) 半透膜semipermeable membrane 反渗透膜reverse osmosis membra nee 多孔膜anisotropic membrane 各向异性膜ani sotropic membra nee 正离子交换膜cati on excha nge membra ne 负离子交换膜anionic excha nge membra ne 吸附树脂polymeric adsorbent 添加剂additive 固化剂curi ng age nt 潜固化剂late nt curi ng age nt 硫化剂vulca nizing age nt 给硫剂sulfur donor age nt/ sulfur donor 硫化促进剂vulcanization accelerator 硫化活化剂vulcanization activatior 活化促进剂activating accelerator 活化剂activator 防焦剂scroch retarder 抗硫化返原剂an ti-reversi on age nt 塑解剂peptizer 偶联剂coupli ng age nt 硅烷偶联剂sila ne coupli ng age nt 酞酸酯偶联剂tita nate coupl ing age nt 铝酸酯偶联剂alumi nate coupli ng age nt 土曾强齐U rei nforci ng age nt 增硬剂harde ning age nt 惰性填料inert filler 增塑剂plasticizer 辅增塑剂coplasticizer 增粘剂tackifier 增容剂compatibilizer 增塑增容剂plasticizer extender 分散剂dispersa nt age nt 结构控制剂constitution controller 色料colorant 荧光增白剂optical bleach ing age nt 抗降解剂antidegradant 防老剂an ti-ag ing age nt 防臭氧剂antiozonant抗龟裂剂an ticrack ing age nt 抗疲劳剂an ti-fatigue age nt 抗微生物剂biocide 防蚀剂an ti-corrosi on age nt 光致抗蚀剂photoresist 防霉剂antiseptic 防腐剂rot resistor 防潮剂moisture proof age nt 除臭剂re-odorant 抗氧剂antioxidant 热稳定剂heat stabilizer 抗静电添加剂an tistatic additive 抗静电剂an tistatic age nt 紫外线稳定剂an tistatic age nt 紫外光吸收剂ultraviolet stabilizer 光稳定剂light stalibizer/ photostabilizer 光屏蔽剂light screener 发泡剂foaming age nt 物理发泡剂physical foami ng age nt 化学发泡剂chemical foami ng age nt 脱模剂releas ing age nt 内脱模剂internal releas ing age nt 夕卜脱模剂exter nal releas ing age nt 阻燃剂flame retardant 防火剂fire retardant 烧蚀剂ablator 润滑剂lubricant 润湿剂wett ing age nt 隔离剂separant 增韧剂toughe ning age nt 抗冲改良性剂impact modifier 消泡剂an tifoam ing age nt 减阻剂drag reducer 破乳剂demulsifier 粘度改进剂viscosity modifier 增稠剂thicke ning age nt/ thicke ner 阻黏剂abhesive 洗脱剂eluant 附聚剂agglomerati ng age nt 后处理剂after-treat ing age nt 催干剂driver 防结皮剂an ti-sk inning age nt 纺织品整理剂textile finishing agent[/size][/color]。

有限元英语

Preference ：Structural 结构分析Thermal 热分析Fluid 流场分析Electromagnetic 电磁场分析Preprocessor 前处理器Element type 单元类型Structural Mass 结构质量Link 杆Beam 梁Pipe 管道Solid 实体Quad 4 node 4 节点四边形单元Quad 8 node 8 节点四边形单元Brick 8 node 8 节点六面体单元Brick 20 node 20 节点六面体单元Tet 4 node 4 节点四面体单元Tet 10 node 10 节点四面体单元Shell 板壳Contact 接触Option 选择Full integration 完全积分Reduced integration 减缩积分Plane stress 平面应力Plane strain 平面应变Axisymmetric 轴对称Plane strs w/thk 平面应力(输入厚度)Real constant 实常数Thickness 厚度Beam 梁Cross-sectional area 横截面积Area moment of inertia 截面惯性矩Torsional moment of inertia 截面极惯性矩Beam height 梁高Material Props 材料特性Material model 材料模型Structural 结构Linear 线性Elastic 弹性Isotropic 各向同性EX 弹性模量PRXY 泊松比Orthotropic 各向正交Anisotropic 各向异性NonlinearDensity 密度（质量）Thermal expansion 热膨胀系数Damping 阻尼Friction coefficient 摩擦系数Thermal 传热CFD 计算流体动力学Electromagneties 电磁学Acoustics 声学Fluid 流体Section 截面Beam 梁Modeling 建模Create 创造Keypoint 关键点(几何)On Working Plane 在工作平面上On Active CS 在激活的坐标系上Hard point 硬点Line 线Straight Line 直线Arc 弧Through 3 KPs 通过3 点By End KPs & Rad 由端点和半径By Cent & Radius 由圆心和半径Full Circle 整圆Spline 样条Spline thru Locs 由点的坐标建立样条曲线Spline thru KPs 由关键点的坐标建立样条曲线Fillet 倒角Area 面，面积Triangle 三角形Square 矩形Pentagon 五边形Hexagon 六边形Heptagon 七角形Octagon 八角形Corner 角Center 中心Dimension 尺寸，维数Annulus 环状Arbitrary 任意Through KPs 通过关键点生成面By Lines 由线生成面Rectangle 四边形By 2 Corners 由2 个角点生成面By Centr & Cornr 由中心和角点生成面By Dimensions 由尺寸生成面Circle 圆面Solid Circle 实体圆面Annulus 圆环面Partial Annulus 部分环面By End Points 由端点生成圆面Polygon 多边形Volume 体Block 块体Cylinder 圆柱体Hollow 空心圆柱体Solid 固体，实体Prism 三棱体Sphere 球体Cone 圆锥体Node 节点Fill between Nds 在两个节点中填充节点Element 单元Attribute 特性Boolean 布尔运算Intersect 相交Add 加Subtract 减Divide 切分Glue 粘接Overlap 搭接Partition 分割Meshing 分网（离散化）Quadrilateral 四边形Triangle 三角形Hexahedral 六面体Tetrahedral 四面体Sweep 扫略Mapped 映射Surface load 表面力Body load 体积力Reaction 反力Force/ Moment 力/力矩Torque 扭矩Shear 剪力Pressure 压力Temperature 温度Inertia 惯性Angular velocity 角速度Angular acceleration 角加速度Gravity 重力Displacement 位移Constraint 约束Boundary condition 边界条件Symmetry B.C. 对称边界条件Antisymmetry B.C. 反对称边界条件Deflection 变形Coordinate System 坐标系Global 整体坐标系Local 局部坐标系Cartesian 笛卡尔（直角）坐标系Cylindrical 柱坐标系Spherical 球坐标系Element 单元坐标系Nodal 节点坐标系Active Cs 激活坐标系Select 选择Entity 实体List 列表Plot 绘图Plot control 绘图控制Work plane 工作平面Parameter 参数Resume 开始DB 数据库Elastic 弹性Plastic 塑性Linear 线性Nonlinear 非线性Contact 接触Delete 删除Couple 耦合Couple DOFS 耦合自由度Coincident node 重合节点Constraint equation 约束方程Solution 求解Static 静力学分析Modal 模态分析Harmonic 谐响应分析Transient 瞬态动力学分析Spectrum 谱分析Buckling 屈曲分析（稳定性分析）Postprocessor 后处理器Deformed shape 变形Contour plot 等高绘图DOF solution 自由度解Component 分量X-component ofdisplacement X 方向位移Displacement vector sum 位移矢量和Stress 应力X-component of stress X 方向正应力XY shear stress XY 剪应力Principal stress 主应力Stress intensity 应力强度Von Mises stress Mises 等效应力（基于第四强度理论）Bending stress 弯曲应力Axial direct stress 轴向应力Strain 应变Initial strain 初应变Frequency 频率。

半导体一些术语的中英文对照

半导体一些术语的中英文对照离子注入机ion implanterLSS理论Lindhand Scharff and Schiott theory 又称“林汉德-斯卡夫-斯高特理论”。

沟道效应channeling effect射程分布range distribution深度分布depth distribution投影射程projected range阻止距离stopping distance阻止本领stopping power标准阻止截面standard stopping cross section 退火annealing激活能activation energy等温退火isothermal annealing激光退火laser annealing应力感生缺陷stress-induced defect择优取向preferred orientation制版工艺mask-making technology图形畸变pattern distortion初缩first minification精缩final minification母版master mask铬版chromium plate干版dry plate乳胶版emulsion plate透明版see-through plate高分辨率版high resolution plate, HRP超微粒干版plate for ultra-microminiaturization 掩模mask掩模对准mask alignment对准精度alignment precision光刻胶photoresist又称“光致抗蚀剂”。

负性光刻胶negative photoresist正性光刻胶positive photoresist无机光刻胶inorganic resist多层光刻胶multilevel resist电子束光刻胶electron beam resistX射线光刻胶X-ray resist刷洗scrubbing甩胶spinning涂胶photoresist coating后烘postbaking光刻photolithographyX射线光刻X-ray lithography电子束光刻electron beam lithography离子束光刻ion beam lithography深紫外光刻deep-UV lithography光刻机mask aligner投影光刻机projection mask aligner曝光exposure接触式曝光法contact exposure method接近式曝光法proximity exposure method光学投影曝光法optical projection exposure method 电子束曝光系统electron beam exposure system分步重复系统step-and-repeat system显影development线宽linewidth去胶stripping of photoresist氧化去胶removing of photoresist by oxidation等离子［体］去胶removing of photoresist by plasma 刻蚀etching干法刻蚀dry etching反应离子刻蚀reactive ion etching, RIE各向同性刻蚀isotropic etching各向异性刻蚀anisotropic etching反应溅射刻蚀reactive sputter etching离子铣ion beam milling又称“离子磨削”。

vcct(虚拟裂纹扩展分析技术)

Vcct (Virtual crack closure technique) <Skin-stiffener debond prediction based on computational fractureanalysis>Interlaminar fracture mechanics characterizes the onset of delaminations in composites. Shear loading causes the panel to buckle and the resulting out-of-plane deformations initiate skin/stringer separation at the location of an embedded defect.METHOD: Finite Element AnalysisELEMENT: the panel and surrounding load fixture were modeled with shell elements. A small section of the stringer foot and the panel in the vicinity of the embedded defect were modeled with a local 3D soil model.1.BACKGROUNDAerospaces structures are made of flat or cured panels with co-cured or adhesively bonded frames and stiffeners computational stress analysis to determine the location of first matrix cracking.An artificial defect was placed at the termination of the center stiffener. The stiffened panel is subjected to pure shear loading which causes the panel to buckle.ANALYSIS: nolinear finite element analysisStrain energy release rates and mixed made ratios were computed using the virtual crack closure technique.2.METHODOLOGY2.1Interlaminar fracture mechanicsThe total strain energy release rate T GThe mode I component due to interlaminar tension I GThe mode II component due to interlaminar sliding shearII GThe mode III component due to interlaminar scissoring shear III GPurpose: to predict delamination onset or growth for two-dimensional problems , theses calculated G components are compared to interlaminar fracture toughness properties measured over a range of mode mixities from pure mode I loading to pure mode II loading.A quasi static mixed-mode fracture criterion is determined by plotting the interlaminar fracture toughness,C G ,versus the mixed-mode ratio , II T G /G , determined from data generated using pure Mode I (/0II T G G =) Double Cantilever Bending (DCB) pure Mode II (/1II T G G =) four point End Notched Flexure (4ENF), and Mixed Mode Bending (MMB) tests of varying ratio for IM7/8852 carbon epoxy material.()II C IC IIC IC T G G G G G G η⎛⎫=+-⋅ ⎪⎝⎭IC G and IIC G are the fracture toughness data for mode I andIIη is a factor determined by the cure fit. Shown in figure 3 in this article.Failure is expected when, for a given mixed mode ratio /II T G G , the calculated total energy release rate,T G , exceeds theinterlaminar fracture toughness, C G.2.2 . Analysis Tools2.2.1. Virtual Crack Closure TechniqueVCCT requires force and displacement input , which is obtained from continuum (2-D) and solid (3-D) finite element analyses of the cracked (2-D) or delaminated (3-D) component.I G and II G are calculated for four-noded elements()()1212**I i l l II i l l G Z w w a G X u u a =-⋅⋅-∆=-⋅⋅-∆a∆is the length of the elements at the crack front;X and i Z are the forces at the crack tip (nodal point i);iThe relative displacements behind the crack tip are calculated from the nodal displacesFor geometric nonlinear analysis where large deformations may occur, both forces and displacements obtained in the global coordinate system need to be transformed into a local coordinate system (x,z'') which originates at the crack tip. For the two-dimensional eight-noded quadrilateral element with quadratic shape functions this yields()212*l II i l l a G X u u a ∆'''=-⋅⋅-∆ The total energy release rate T G is calculated from the individual mode components asT I II III G G G G =++where 0III G = for the two-dimensional case discussed.In a finite element model made of three-dimensional solid elements the delamination of length a is represented as a two-dimensional discontinuity by two surfaces . (why does it is discontinuity?)The model I, mode II, and mode III components of the strain energy release rate I G ,II G ,and III G are calculated as()()21212**Ll II Li Ll Ll III Li Ll Ll AG X u u AG Y v v A ∆=-⋅⋅-∆=-⋅⋅-∆ A a b ∆=∆⋅. Here A ∆ is the area virtually closes, a ∆is the length of the elements at the delamination front, and b is the widthof the elements.A local crack tip coordinate system is needed.2.2.2. A Global/Local Shell 3D Modeling Technique Computed mixed mode strain energy release rate components depend on many variables such as element order and shear deformation assumptions, kinematic constraints in the neighborhood of the delamination front, and continuity of material properties and section stiffness in the vicinity of the debond when delaminations or debonds are modeled with plate or shell finite elements.3.FINITE ELEMENT MODELING3.1. Global Shell Model of Stringer Stiffened PanelThe global model includes the steel load frame andattachments, the panel made of graphite/epoxy prepregtape and the stringers made of graphite/epoxy fabric. The outer steel load frame and the attachment bolts were modeled with beam elements available in the element software ABAQUS. The inner steel load frame which overlaps the panel edge was modeled with standard shell S4 elements.The shell elements ate connected by beam elements designed to enforce plate theory constraints. In the sections containing the artificial defects the beam elements were replaced by gap elements.In preparation for the global/local modeling approach shell elements representing the foot of the stiffener and the panel were removed from the original shell model around the center stringer termination as shown in Figure 9. The shell elements used to model the stiffener web and hat were kept in place. At the boundaries shell edges in ABAQUAS were defined as shown which were used to connect the shell model with the local 3D insert model using the shell to solid coupling option in ABAQUS which allows the connection between non-conforming shell and solid models.3.2 Local 3D Insert Model for Solid Modeling of Stringer Foot and Panel SkinThe local 3D insert model was generated using C3D8I solid brick elements and consisted of an intact section and a delaminated section with a fine mesh around the delamination front. Surfaces were defined on the outer faces of the insert model to provide a connection with the global shell model using the shell to solid coupling option in ABAQUS. The initial defect is located at the bondline between stringer foot and the panel. This defect was treated as a delamination and modeled as a discrete discontinuity usingtwo unconnected nodes with identical coordinates one on each side of the delamination. A refined mesh was used along the stringer boundary in order to capture edge effects. Using the finite sliding option available in ABAQUS contact was modeled between the delamination surfaces to avoid interpenetration during analysis.3.3. Combined Global/Local Shell/3D Model of Stringer Stiffned PanelUniform displacements u, v were applied at one corner node to introduce shear as shown in Figure 11a. The inplane displacements u, v were suppressed at the diagonally opposite corner and the out of plane displacement w were suppressed along all four edges across the entire width of the inner and outer steel load frame.The global shell model was connected to the local 3D insert model using the shell to solid coupling option in ABAQUS which allows the connection between non-conforming shell and solid models. For the entire analyses the non-linear solution option was used in ABAQUS. A total of eight delamination lengths were modeled. Additional lengths were chosen to study the change in energy release rate distribution across the width (b) of the stringer with increasing delamination length (a).4.ANALYSIS RESULTS4.1Deformed PanelThe longer caused a change in the stiffness which resulted in an altered buckling pattern.Early in the analysis (increment 5) a mode I opening was observed only near one edge. With increasing applied external displacement the deformation changed locally and for increment 15 mode I disappeared completely and thedelamination appeared closed over the entire delaminated length. A small scissoring shear (mode III) could be observed. Further increasing the external displacement resulted in a small mode I opening across the entire width of the stringer as observed for increment 20. For the last step of the analysis (increment 41) after the entire external displacement u =v =6.35mm had been applied mode I opening was observed across the entire width of the stringer over the entire delaminated length.The figure reveals that not the entire delaminated section opens under mode I. After initial opening, the section below the web termination closes and the delaminated surfaces contact. This closing is caused by a change in the local buckling pattern, due to stiffness changes caused by the longer delamination, as discussed above. It was observed that the local buckling pattern in the immediate surrounding of the delaminated stringer is dependent on thedelamination length modeled, which made convergence difficult.4.2 Calculation of Mixed-Mode Strain Energy Release Ratesand Failure IndicesVCCT was used to calculate the mode contributions I G ，II G and III G the total energy release rate T I II III G G G G =++,as well as the mixed mode ratios /S T G G along the delamination front across the width b of the stringer for all delamination lengths modeled. Here S G denotes the sum of the in-plane shearing II III G G +components. For two-dimensional analysis, which also yields results for the scissoring mode III G , the modified definition of S G is introduced since a mixed-mode failure criterion, which accounts for all three modes is currently not available.5. SUMMARY AND CONCLUDING REMARKS.The skin/stringer separation of a graphite/epoxy composite panel reinforced with three stringers and subjected to pure shear loading was studied using computational fracture analysis. The shear loading causes the panel to buckle and the resulting out-of plane deformation initiates skin/stringer separation at the location of an embedded defect. The panel and surrounding load fixture were modeled with shell elements. A small section of the stringer foot and the panel in the vicinity of the embedded defect were modeled with a local 3D solid model.6.Word文档资料。

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Boundary element modeling for defect characterizationpotential in a wave guideXiaoliang ‘‘George’’Zhao,Joseph L.Rose *Department of Engineering Science and Mechanics,The Pennsylvania State University,212Earth-Engineering Science Building,University Park,PA 16802,USAReceived 14November 2002;received in revised form 14January 2003AbstractWave scattering analysis implemented by boundary element methods (BEM)and the normal mode expansion technique is used to study the sizing potential of two-dimensional shaped defects in a wave guide.Surface breaking half-elliptical shaped defects of three opening lengths (0.3,6.35and 12.7mm)and through-wall depths of 10–90%on a 10mm thick steel plate were considered.The reﬂection and transmission coeﬃcients of both Lamb and shear horizontal (SH)waves over a frequency range 0.05–2MHz were studied.A powerfully practical result was obtained whereby the numerical results for the S 0mode Lamb wave and n 0mode SH wave at low frequencies showed a monotonic increase in signal amplitude with an increase in the defect through-wall depth.At high frequency (usually above the cut-oﬀfre-quency of the A 1mode for Lamb waves and the n 1mode for SH waves,respectively),the monotonic trend does not hold in general due to the energy redistribution to the higher order wave modes.Guided waves impinging onto an internal stringer-like an inclusion were also studied.Both the Lamb and SH waves were shown to be insensitive to the stringer internal inclusions at low frequency.Experiments with piezoelectric Lamb wave transducers and non-contact SH wave electro-magnetic acoustic transducers (EMAT)veriﬁed some of the theoretical results.Ó2003Elsevier Science Ltd.All rights reserved.Keywords:Boundary element methods;Guided waves;Wave scattering;Shear horizontal waves;Lamb waves;Defect sizing1.IntroductionPipelines in the gas industry are aging.Inspection systems are needed to locate defects and to be able to characterize and size them eﬃciently.Existing technologies for pipe inspection such as magnetic ﬂux leakage methods are good for detecting corrosion damage inside a pipe.The technique has a limitation,however,in detecting or quantifying small surface-open-area ﬂaws or cracks.In addition,there are con-cerns as to whether stringer-like internal inclusions that are assumed benign could still give a false alarm for any of the inspectionsystems.International Journal of Solids and Structures 40(2003)2645–/locate/ijsolstr*Corresponding author.Tel.:+1-814-863-8026;fax:+1-814-863-8164.E-mail address:jlresm@ (J.L.Rose).0020-7683/03/$-see front matter Ó2003Elsevier Science Ltd.All rights reserved.doi:10.1016/S0020-7683(03)00097-02646X.G.Zhao,J.L.Rose/International Journal of Solids and Structures40(2003)2645–2658Over the last two decades,ultrasonic guided waves have demonstrated the potential for detecting many defects that occur in tube,pipe or plate structures that are not easily and eﬃciently detected by other means (Achenbach,1984;Rose,1999;Fortunko et al.,1982;Rose et al.,1994;Alleyne and Cawley,1997).One major beneﬁt of guided waves is in their rapid global inspection capability.Defect classiﬁcation and sizing with guided waves,however is still an important issue to be resolved in order for this technique to be more useful than just a defect screening method.Many researchers have tried to tackle guided wave scattering problems using various methods,e.g.Alleyne and Cawley(1992)studied the interaction of Lamb waves with notches of various depth,width and angle with respect to the normal of the plate surface by using a purely time domainﬁnite element method(FEM)combined with2-D Fourier transform;Valle et al.(2001) examined the Lamb wave propagation in a hollow isotropic cylinder wall containing a crack with a commercial FEM software package and a time–frequency signal processing technique.Chang and Mal (1999)and Mal and Chang(2000)studied the scattering of Lamb waves from rivet holes and cracks in plates using hybrid frequency domain FEM and normal mode expansion(called global–local FEM tech-nique)followed by FFT inversion to obtain the scatteredﬁeld in time domain.Abduljabbar et al.(1983) studied the diﬀraction of horizontal shear waves by normal edge cracks in a plate;Karim et al.(1992) studied the Lamb wave scattering from cracks and inclusions in a plate due to a vertical Gaussian beam load with a hybrid FEM and normal function expansion method.Liu and Datta(1993)also calculated the surface displacements when a steel ball impacts on a plate with cracks using a hybrid FEM at the nearﬁeld and a boundary integral representation at the farﬁeld.Some additional work can be found in Paﬀenholz et al.(1990),Liu et al.(1991)and Karunasena et al.(1991).Recently,the boundary element method(BEM)has shown many advantages in wave scattering prob-lems,such as reduction of dimensionality,computational eﬃciency in less computer time and storage,easy management of unbounded domains and more targeted calculations(Brebbia et al.,1984;Schafbuch et al., 1990).A hybrid BEM combined with the normal mode expansion technique has been used to study Lamb wave mode conversion from the edge of a plate(Cho and Rose,1996)and its interaction with surface breaking defects(Rose et al.,2000;Cho and Rose,2000).Our initial work on SH wave sizing potential was reported in Rose and Zhao(2001),where the same technique was extended to study the interaction of the n0 mode SH wave with various crack and corrosion boundaries in a structure.For stringer-like internal in-clusions,Rokhlin(1980,1981)did some studies on the diﬀraction and resonance phenomena of Lamb waves by aﬁnite parallel crack in a plate using Wiener-Hopf technique and multiple diﬀraction methods. The reﬂection and transmission characteristics of Lamb and SH waves impinging onto a stringer inclusion was not yet presented in the literature.In this paper,the hybrid BEM normal mode expansion technique is applied to the study of both Lamb and SH waves of any mode of incidence onto a half-elliptical shaped surface breaking defect of three diﬀerent opening lengths(0.3,6.35and12.7mm)and of various depths(10%,30%,...,90%through-wall depth).Attempts were made toﬁnd the best mode and frequency with the best chance of success in carrying out the defect classiﬁcation and sizing study.A stringer-like internal inclusion in a plate was also modeled and studied in order to examine its eﬀect on the propagation of guided waves.It turned out that the S0 mode Lamb wave and the n0mode SH wave at low frequencies had a monotonic increase in their reﬂected signal amplitudes and a decrease in transmitted signal amplitudes with an increase of defect through-wall depth for all three surface breaking defects.This is potentially a breakthrough result in simplifying sizing algorithms signiﬁcantly provided the right frequency range is used.When frequency increases,more modes will propagate in the structure due to mode conversion at the defect boundary.The wave energy is redistributed.The monotonic trend does not hold any longer except for some sporadic frequency ranges. The stringer-like internal inclusions did not generate much interference for the n0mode SH wave for most of the frequencies and the S0mode Lamb wave below theﬁrst cut-oﬀfrequency(the A1mode cut-oﬀ).Most of the wave energy passed through the inclusion region with little reﬂection.Higher order mode SH waves, high frequency S0and other mode Lamb waves would certainly‘‘see’’the inclusion.For the experiments,the three half-elliptical shaped surface breaking defects were fabricated in10mm thick steel mb waves were generated and received by a piezoelectric transducer mounted on a variable angle Plexiglas wedge and the SH waves were generated by periodical permanent magnets(PPM)EMATs.Reﬂected and transmitted time domain signal amplitudes were recorded to calculate the reﬂection and transmission co-eﬃcients.They agreed quite well with the BEM results.2.Hybrid boundary element-normal mode expansion solutionsThe study was carried out on half-elliptical shaped scatterers with variations in defect depth and opening length values as shown in Fig.1.The thin stringer-like internal inclusion studied is shown in Fig.2.An incident time harmonic wave is considered propagating in the positive x1direction.The mode incident onto the defects results in both reﬂected and transmitted waves of all orders of the propagating as well as non-propagating modes in the vicinity of the crack.The evanescent modes die out quickly within several wavelengths,thus only propagating modes can exist and carry energyﬂux in the plate far away from the defect(Koshiba et al.,1984;Vasudevan and Mal,1985).The hybrid boundary element normal mode ex-pansion technique works in a way that at the farﬁeld of the scattered waves,the total displacement and traction are the superposition of all of the incident and scattered propagating waveﬁelds,i.e.,Uðx1;x2Þ¼A INpU pðx2Þe i k p x1þP1n¼0AÀnU nðx2ÞeÀi k n x1;ðx16CÀÞ;P1n¼0AþnU nðx2Þeþi k n x1;ðx1P CþÞ;8>><>>:ð1ÞTðx1;x2Þ¼A INpT pðx2Þe i k p x1þP1n¼0AÀnT nðx2ÞeÀi k n x1;ðx16CÀÞ;P1n¼0AþnT nðx2Þeþi k n x1;ðx1P CþÞ;8>><>>:ð2ÞFig.1.(a)Sketch for the wave scattering analysis.Solid and dashed arrows show incident and scattered modes respectively.Area contained between CÆlines is used for BEM modeling.L is larger than two wavelengths.(b)Parameters for the elliptical shapedefect.Fig.2.(a)Problem statement and(b)void geometry for SH wave scattering from the elliptical void in a plate.X.G.Zhao,J.L.Rose/International Journal of Solids and Structures40(2003)2645–26582647where A IN p is the known amplitude of the incident p th mode,A Æn denotes the unknown amplitudes of thescattered waves traveling in the positive and negative x 1directions respectively.U n ðx 2Þand T n ðx 2Þdenote the known normalized displacement and traction model functions of the n th mode in the plate,respectively.k n represents the wave number.The time dependent term e Ài x t is omitted elsewhere.At the region where there is a defect,the BEM was used to calculate the wave ﬁeld due to irregular boundary geometry.The boundary value problem modeling the region with defects leads to the following boundary integral equations:For Lamb waves:C ki ðn *Þu i ðn *ÞþZ C t Ãki ðn *;v *Þu i d C ¼Z Cu Ãki ðn *;v *Þt i d C :ð3ÞFor SH waves:C ðn *Þu ðn *ÞþZ C o u Ãðn *;v *Þo n u ðv *Þd C ðv *Þ¼Z C u Ãðn *;v *Þo u ðv *Þo n d C ðv *Þ:ð4ÞHere C is the total boundary of the modeling area.n *is a position vector of the unit point source load and v*is a ﬁeld point.The values of C ki ðn *Þand C ðn *Þdepend on boundary smoothness.They are equal to 1/2if C is smooth,o u =o n is the derivative of u with respect to the outward normal to the boundary C .u i ðv *Þ,u ðv *Þarethe displacements on the boundary and t ki and o u =o n are the tractions.The terms u Ãki ðr Þ,u Ãðr Þand t Ãki ðr Þreferto the fundamental solutions in frequency domain.For example,u Ãðr Þcan be expressed as a Hankel function of the ﬁrst kind (Kobayashi,1987)u Ãðr Þ¼i 4H ð1Þ0x c Tr ;ð5Þand u Ãki ðr Þand t Ãki ðr Þexpressed asu Ãki ðn ;v Þ¼A ðU _1d ki ÀU _2r ;k r ;i Þ;ð6Þt Ãki ðn ;v Þ¼GA d ki o r o n "þn i r ;k þk G þn i r ;k d U _1d rÀd ki o r o n þn i r ;k þ2n ;i r ;k À2r ;k r ;i o r o n þa k G n i r ;k U _2r À2r ;k r ;i o r o n þk G n i r ;k d U _2d r #;ð7Þwhere the distance between a unit point source and ﬁeld point r and coeﬃcients a and A are deﬁned as r ðn *;v *Þ¼j n *Àv *j ,a ¼1and A ¼i =4G for the 2-D case.U _1,U _2in Eqs.(6)and (7)areU _1¼H ð1Þ0ðk T r ÞÀ1k T r H ð1Þ1ðk T r Þþk L k T2H ð1Þ1ðk L r Þ;ð8ÞU _2¼ÀH ð1Þ2ðk T r Þþk Lk T 2H ð1Þ2ðk L r Þ;ð9Þwhere k L is the longitudinal wave number,k T is the transverse wave number and H ð1Þ0,H ð1Þ1and H ð1Þ2are theHankel functions of the ﬁrst kind of order 0,1and 2.By discretizing the domain boundary into N constant boundary elements,Eqs.(3)and (4)can be transformed into2648X.G.Zhao,J.L.Rose /International Journal of Solids and Structures 40(2003)2645–2658c i u iþX Nj¼1ZC jtÃd C()u j¼X Nj¼1ZC juÃd C()t j;ð10Þnoting that u j and t j are constant on the j th element C j and are taken out of the integral.Here vector notion is used,i.e.For Lamb wavesu¼u1u2;t¼t1t2;uÃ¼uÃ11uÃ12uÃ21uÃ22;tÃ¼tÃ11tÃ12tÃ21tÃ22:ð11ÞFor SH wavesu¼u3;t¼o u3=o n;uÃ¼uÃ3;tÃ¼o uÃ3=o n:ð12ÞBy deﬁningG ij¼ZC j uÃd C;H_ij¼ZC jtÃd C and H ij¼H_ijwhen i¼jH_ijþc i when i¼j8<:ð13ÞEq.(10)can be rewritten asX N j¼1H ij u j¼X Nj¼1G ij t jð14Þor in a matrix formHU¼GT on C;ð15Þwhere U and T are the total boundary displacement and traction vectors.H and G are the boundary in-tegral terms of the traction and displacement of the fundamental solutions.Now consider the mesh geometry between CÀand Cþas shown in Fig.1.By separating the boundary elements into four groups‘‘Top’’,‘‘CÀ’’,‘‘Bot’’and‘‘Cþ’’,which stands for the elements on the top surface, left virtual boundary,bottom surface and right virtual boundary,respectively,Eq.(15)can be written as:½Hu Topu CÀu Botu Cþ26643775¼½Gt CÀt Cþ26643775:ð16ÞHere the traction free boundary conditions are already implemented in the equations.The only non-zero traction term is from the virtual boundaries,where the incident wave and scattered waves superimpose.Note that in Eqs.(1)and(2),A INp and AÆnare the same in the both the expansions of the displacement andtractionﬁelds,thus they can be eliminated,and t CÆcan be expressed as an explicit linear function of u CÆ.For example,on the left virtual boundary,the SH wave displacement and tractions aref ug CÀkÂ1¼½ u INkÂJf A INpd pje i kj x1gJÂ1þ½ u BSkÂJf AÀjeÀi kj x1gJÂ1on CÀ;ð17Þf tg CÀkÂ1¼½ t INkÂJf A INpd pje i kj x1gJÂ1þ½ t BSkÂJf AÀjeÀi kj x1gJÂ1on CÀ;ð18Þwhere k elements are assumed on CÀand there are J modes of SH waves in the plate.The terms½ u INkÂJ and½ u BSkÂJ are the normalized incident and scattered displacement model matrices,respectively,½ t INkÂJand½ t BSkÂJare the corresponding traction matrices.From Eq.(17),the scattered wave model amplitude isX.G.Zhao,J.L.Rose/International Journal of Solids and Structures40(2003)2645–26582649f AÀj eÀi kj x1gJÂ1¼½ uÀ1 BSJÂkf ug CÀkÂ1À½ uÀ1 BSJÂk½ u INkÂJf A INpd pje i kj x1gJÂ1on CÀ:ð19ÞBy substituting Eq.(19)into Eq.(18),f tg CÀkÂ1¼ð½ t INkÂJÀ½ t BSkÂJ½ uÀ1 BSkÂJ½ u INkÂJÞf A INpd pje i kj x1gJÂ1þ½ t BSkÂJ½ uÀ1 BSkÂJf ug CÀkÂ1on CÀð20Þi.e.t CÀis expressed as a linear function of u CÀ.Similarly,t Cþcan be expressed by u Cþand thus Eq.(16)will provide us with a unique solution of theboundary values of the total displacementﬁeld of the SH waves.Consequently,the unknown backward and forward scattered SH wave mode amplitudes can be determined through Eq.(19)etc.,and the n thmode reﬂection coeﬃcient j R jnp and transmission coeﬃcient j T jnpcan be calculated by dividing the scatteredmode amplitude to the incident p th mode amplitude,i.e.j R jnp ¼AÀn=A INp;j T jnp¼Aþn=A INp:ð21ÞFor Lamb waves,the same procedure also applies except that the displacement and tractionﬁeld will have two components for each boundary element instead of just one as in the SH wave case.Detailed formula derivations can be found in(Cho and Rose,2000)and will not be iterated here.3.BEM calculation on surface breaking defectsTwo-dimensional BEM Fortran codes were developed for calculating the reﬂection and transmission coeﬃcients of both Lamb and SH waves on a plate with arbitrary shaped defects(Zhao et al.,2002).The results presented here were used for a sizing study of elliptical defects of10%,30%,...,90%through plate thicknesses with opening lengths2a equal to0.3,6.35or12.7mm on10mm steel plates(see Fig.3).Code accuracy was proven through benchmark comparison studies(Cho and Rose,1996).The boundary element size was chosen to be less than oneﬁfteenth of the shear wavelength,which proved to be suﬃcient for computation convergence.The length of the meshed region was chosen to be at least ten times the plate thickness in order to neglect the evanescent modes.The material properties for steel were chosen as:lon-gitudinal wave velocity c L¼5:9mm/l s,the transverse wave velocity c T¼3:2mm/l s and density q¼7:8g/ cm3.Fig.4shows the phase and group velocity dispersion curves for Lamb waves in a10mm steel plate. The lowest three wave modes are marked on theﬁgure and theﬁrst cut-oﬀfrequency is seen around200 kHz.Notice that at a given frequency point,at least two wave modes could possibly propagate in a plate.All of these normal modes have diﬀerent wave structure and wave numbers.The scattered waveﬁeldisFig.3.Modeling statement of a guided wave striking elliptical defects of10%,20%,...,90%through plate thickness. 2650X.G.Zhao,J.L.Rose/International Journal of Solids and Structures40(2003)2645–2658constructed in the plate at several wavelengths away from the defects.The BEM calculated reﬂection and transmission coeﬃcients versus frequency are plotted in Figs.5–7for the S 0mode Lamb wave incident onto the three half-elliptical shaped defects,respectively.They show that the reﬂection andtransmission Fig.5.Calculated (a)reﬂection and (b)transmission coeﬃcients for S 0mode under S 0incident for 0.012in.(0.3mm)elliptical defect and 10%,30%,50%,70%,90%through plate thicknessdepth.Fig.6.(a)Approximate reﬂection and (b)transmission coeﬃcients for S 0mode under S 0incident for 0.25in.(6.35mm)elliptical defect and 10%,30%,50%,70%,90%through plate thicknessdepth.Fig.4.The Lamb wave dispersion curve for 10mm steel plate.(a)Phase velocity and (b)group velocity.X.G.Zhao,J.L.Rose /International Journal of Solids and Structures 40(2003)2645–26582651coeﬃcients of the S 0mode;Lamb wave are strongly dependent on frequency.They do not increase or decrease monotonically with an increase of defect depth at high frequencies.This phenomenon was also observed for the A 1mode Lamb wave by Alleyne and Cawley (1992)in their experiments.At low fre-quencies (e.g.below 200kHz),however,it can be seen that the reﬂected S 0mode signal amplitude increases monotonically,and the transmitted S 0mode signal amplitude decreases monotonically,with the percentage through-wall defect depth increase for all three types of surface opening defects.Calculations were also conducted for the A 0mode Lamb wave,but no such properties were observed at low frequencies.Intuitively,this monotonic trend of amplitude change is due to the fact that the in-plane displacement and stress ﬁeld of the S 0mode at low frequencies are dominant,and they are relatively uniform throughout the plate thickness.The wave energy reﬂected from and transmitted through the defect region thus changes monotonically with the defect depth,as long as the defect length (in the wave propagation direction)is small compared to the wavelength of that mode.Similar calculations were also conducted for the SH wave n 0,n 1and n 2modes.Fig.8(a)and (b)show the phase and group velocities of the SH waves in a 10mm steel plate.The lowest order mode n 0and also n 1are marked.Fig.9shows the reﬂection and transmission coeﬃcients versus frequency for the SH n 0mode wave incident onto the 0.3mm notch defect.An excellent monotonic increase in reﬂection coeﬃcient amplitude and decrease in transmission coeﬃcient amplitude are seen with an increase of the defects Õpercentage through-wall depths for most frequencies.Those coeﬃcients do not vary much at higher frequencies.ThisFig.7.(a)Approximate reﬂection and (b)transmission coeﬃcients for S 0mode under S 0incident for 0.5in.(12.7mm)elliptical defect and 10%,30%,50%,70%,90%through plate thicknessdepth.Fig.8.The shear horizontal wave dispersion curve for a 10mm steel plate.(a)Phase velocity and (b)group velocity.2652X.G.Zhao,J.L.Rose /International Journal of Solids and Structures 40(2003)2645–2658phenomenon may again be explained by the uniformity of the displacement and stress ﬁeld of the n 0mode throughout the plate thickness.Monotonic trends were also obtained for 6.35and 12.7mm defects at low frequencies as shown in Figs.10and 11.The transmission coeﬃcients continue to observe themonotonic Fig.9.(a)Approximate reﬂection and (b)transmission coeﬃcients for n 0mode under n 0incident for 0.012in.(0.3mm)elliptical defect length and 10%,30%,...,90%through plate thicknessdepth.Fig.10.(a)Approximate reﬂection and (b)transmission coeﬃcients for n 0mode under n 0incident for 0.25in.(6.35mm)elliptical defect length and 10%,30%,...,90%through plate thicknessdepth.Fig.11.(a)Approximate reﬂection and (b)transmission coeﬃcients for n 0mode under n 0incident for 0.5in.(12.7mm)elliptical defect length and 10%,30%,...,90%through plate thickness depth.X.G.Zhao,J.L.Rose /International Journal of Solids and Structures 40(2003)2645–26582653trend for most of the frequencies.However,the reﬂection coeﬃcients become frequency sensitive and the monotonic trend may not hold for frequencies above 300kHz.This might be due to the phase variation of the waves reﬂecting from a curved surface (elliptical in this case).Also note in Fig.9(a)and (b),that there are local peaks and valleys on the 90%defect reﬂection and transmission pared with the dispersion curves for SH waves,it is seen that these local extremes appeared at the cut-oﬀfrequencies.More studies will be conducted on this resonance eﬀect.4.BEM calculation on internal inclusionsIt appears that the low frequency S 0mode Lamb and n 0mode SH waves would have great potential in defect through-wall depth sizing,yet there is a concern as to whether a benign stringer like an internal inclusion (e.g.a void)in a plate would indicate a false alarm.To answer this question,BEM calculations were conducted on a 10mm thick steel plate with a 50mm long,0.3mm wide internal elliptical inclusion at the mid-plane of the plate (Fig.2).Reﬂection and transmission coeﬃcients for the S 0mode Lamb wave and n 0mode SH wave incidence versus frequency were calculated respectively.Fig.12(a)and (b)shows the reﬂection and transmission coeﬃcients of the S 0,S 1,S 2,A 0and A 1modes versus frequency for the S 0mode Lamb wave incidence,while Fig.13(a)and (b)shows those of the n 0,n 1n 2,n 3and n 4mode SH waves for n0Fig.12.(a)Reﬂection and (b)transmission coeﬃcients of the S 0,S 1,S 2,A 0,A 1mode Lamb waves versus frequency for a 50mm long,0.3mm wide internal elliptical inclusion in a 10mm thick steel plate with S 0modeincidence.Fig.13.(a)Reﬂection and (b)transmission coeﬃcients of the n 0,n 1,n 2,n 3and n 4mode SH waves versus frequency for a 6mm long,0.2mm wide internal elliptical inclusion with the n 0mode incidence.2654X.G.Zhao,J.L.Rose /International Journal of Solids and Structures 40(2003)2645–2658mode incidence.Note that in these twoﬁgures,the inclusion of S1,S2,A0,A1and n1,n2,n3and n4modes is to show the eﬀect of mode conversion due to the defect.It is shown that the low frequency(below theﬁrst cut-oﬀfrequency)S0mode Lamb wave and the n0 mode SH wave energy over most frequencies will pass through the inclusion region with almost no re-ﬂection.There is no mode conversion from a symmetric mode to an anti-symmetric mode for both the Lamb wave and SH waves for all frequencies,thus both the reﬂection and transmission coeﬃcients of the A0,A1mode Lamb wave and n1,n3mode SH wave are zero,as is seen from theﬁgures.When the incident frequency goes beyond theﬁrst cut-oﬀfrequency,however,both the S0mode Lamb wave and the mode converted higher order symmetric modes would be reﬂected back,and thus would be able to see the stringer.5.Experimental setup and data collectionExperiments on defect through-wall sizing were conducted on sixteen10mm thick steel plates.Fifteen of the plates were approximately450mm long and200mm wide,each having a0.3,6.35or12.7mm long and 10%,30%,50%,70%or90%through-wall half-elliptical defect in it.The other plate was approximately550 mm long and130mm wide.It had an EDM machined0.3mm wide,50mm long and through-plate internal inclusion in the mid-plane.Two piezoelectric transducers of center frequency175kHz and bandwidth from 130to220kHz were mounted on30°angle Plexiglas wedges.They were used to generate and receive the S0 mode Lamb wave in a plate in utilizing SnellÕs law for a conversion to phase velocity.The n0mode SH wave was generated and received by two SH wave PPM EMATs at a center frequency of210kHz.The ex-periment makes use of a Matec Explorer II system which has a high power tone burst card for generating rectangular windowed sinusoidal waveforms,and a DSP board for receiving and digital processing signals forﬁltering and ampliﬁcation.The waveforms can be displayed on the screen and stored for further analysis.In the experiment,time domain signal peak-to-peak amplitudes were measured for calculating the reﬂection and transmission coeﬃcients at the center frequency of the tone burst signal.This approximation is valid as long as the signal has a fairly narrow bandwidth.A more accurate calculation might require a Fourier transform of the time domain signal in moving to frequency domain,hence calculating the coef-ﬁcients for individual frequency points.During the transmission coeﬃcients measurement,a reference signal was obtainedﬁrst by separating two transducers(piezoelectric transducers for the Lamb wave measurement and SH EMATs for the SH waves)150mm apart on the clean part of a plate with no defect in between.The signal amplitude was recorded.The transducers were then placed on the plate with a defect in between with each transducer approximately75mm away from the center of the defect.The transmitted signal amplitude was thus recorded.Care should be taken for the edge reﬂection from the plate end when using the PPM EMAT since it generates and receives waves bi-directionally.For the reﬂection coeﬃcients measurement,a simulated pulse-echo reference signal was obtainedﬁrst by facing the two transducers at an angle(about15°to the edge normal)to the plate edge to compensate for beam divergence.The reﬂected signals from the defects were then recorded with the same transducer setup.Finally,the peak-to-peak values of the reﬂected and transmitted signals were divided by the corresponding reference signal to give the reﬂection and transmission coeﬃcients.6.Experimental results and discussionThe experimental and BEM-predicted reﬂection and transmission coeﬃcients are compared in this section for both the Lamb and SH waves impinging onto the surface breaking defects as well as the stringer-like internal parisons are made at only one frequency point(175kHz for the S0mode Lamb。