4N65

UNISONIC TECHNOLOGIES CO., LTDORDERING INFORMATIONOrdering Number Package Pin AssignmentPackingLead Free Halogen Free 1 2 3 4N65L-TA3-T 4N65G-TA3-T TO-220 G D S Tube 4N65L- TF1-T 4N65G-TF1-T TO-220F1 G D S Tube 4N65L- TF2-T 4N65G-TF2-T TO-220F2 G D S Tube 4N65L- TF3-T 4N65G-TF3-T TO-220F G D S Tube 4N65L-TM3-T 4N65G-TM3-T TO-251 G D S Tube 4N65L-TN3-R 4N65G-TN3-R TO-252 G D S Tape Reel 4N65L-TN3-T 4N65G-TN3-T TO-252 G D S Tube 4N65L-T2Q-T 4N65G-T2Q-T TO-262 G D S Tube 4N65L-TQ2-R 4N65G-TQ2-R TO-263 G D S Tape Reel 4N65L-TQ2-T 4N65G-TQ2-T TO-263 G D S Tube Note: Pin Assignment: G:ABSOLUTE MAXIMUM RATINGS (T C = 25°С, unless otherwise specified)PARAMETER SYMBOLRATINGSUNIT Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V Avalanche Current (Note2) I AR 4.4 ADrain Current Continuous I D 4.0A Pulsed (Note2) I DM 16 AAvalanche Energy 4N60Single Pulsed (Note3)E AS260mJ4N65-E 200 4N65-Q 60 Repetitive (Note2) E AR 10.6 mJPeak Diode Recovery dv/dt (Note4) dv/dt 4.5 V/nsPower Dissipation TO-220/TO-262/TO-263P D106WTO-220F/TO-220F1 36TO-220F2 38 TO-251/ TO-252 50Junction Temperature T J+150 °СOperating Temperature T OPR-55 ~ +150 °СStorage Temperature T STG-55 ~ +150 °СNote: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.Absolute maximum ratings are stress ratings only and functional device operation is not implied.2. Repetitive Rating : Pulse width limited by maximum junction temperature3. L = 30mH, I AS = 4A, V DD = 50V, R G = 25 Ω, Starting T J = 25°C4. I SD≤4.4A, di/dt ≤200A/μs, V DD≤BV DSS, Starting T J = 25°CTHERMAL DATAPARAMETER PACKAGE SYMBOL RATINGS UNITJunction to Ambient TO-220/TO-262/TO-263θJA62.5°С/WTO-220F/TO-220F1 62.5TO-220F2 62.5 TO-251/ TO-252 83Junction to Case TO-220/TO-262/TO-263θJc1.18°С/WTO-220F/TO-220F1 3.47TO-220F2 3.28 TO-251/ TO-252 2.5ELECTRICAL CHARACTERISTICS (T C =25°С, unless otherwise specified)PARAMETER SYMBOLTESTCONDITIONSMINTYPMAX UNITOFF CHARACTERISTICSDrain-Source Breakdown Voltage BV DSS V GS = 0 V, I D = 250μA 650 V Drain-Source Leakage Current I DSS V DS = 650 V, V GS = 0 V 10μAGate-Source Leakage Current ForwardI GSSV GS = 30 V, V DS = 0 V 100nA Reverse V GS = -30 V, V DS = 0 V -100nABreakdown Voltage Temperature Coefficient BV△DSS/△T J I D=250μA, Referenced to 25°C 0.6 V/°СON CHARACTERISTICSGate Threshold Voltage V GS(TH)V DS = V GS, I D = 250μA 2.0 4.0VStatic Drain-Source On-State Resistance 4N65R DS(ON)V GS = 10 V, I D = 2.2A2.4 2.5Ω4N65-E2.42.54N65-Q2.93.1DYNAMIC CHARACTERISTICSInput Capacitance C ISSV DS = 25 V, V GS = 0V,f = 1MHz 520 670pFOutput Capacitance C OSS7090pFReverse Transfer Capacitance C RSS811pFSWITCHING CHARACTERISTICSTurn-On Delay Time t D(ON)V DD = 325V, I D = 4.0A,R G = 25Ω(Note 1, 2) 13 35nsTurn-On Rise Time 4N65t R70 100ns4N65-E601004N65-Q45100Turn-Off Delay Time t D(OFF)2560nsTurn-Off Fall Time 4N65t F100 120ns4N65-E701204N65-Q35120Total Gate Charge Q GV DS= 520V,I D= 4.0A,V GS= 10V (Note 1, 2) 15 20nCGate-Source Charge Q GS 3.4 nCGate-Drain Charge Q GD 7.1 nC SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICSDrain-Source Diode Forward Voltage V SD V GS = 0 V, I S = 4.4A 1.4V Maximum Continuous Drain-Source DiodeForward CurrentI S 4.4 A Maximum Pulsed Drain-Source DiodeForward CurrentI SM17.6 AReverse Recovery Time t rr V GS = 0V, I S = 4.4A,dI F/dt = 100 A/μs (Note 1) 250 nsReverse Recovery Charge Q RR 1.5 μC Note: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%2.Essentiallyindependent of operating temperatureTEST CIRCUITS AND WAVEFORMSV DDPeak Diode Recovery dv/dt Test CircuitV GS (Driver)I SD (D.U.T.)Body Diode Forward Voltage DropV DS (D.U.T.)Peak Diode Recovery dv/dt WaveformsTEST CIRCUITS AND WAVEFORMS(Cont.)R LDDSwitching Test CircuitSwitching WaveformsGate Charge Test Circuit Gate Charge WaveformV DDt p TimeBV DSSI ASD(t)Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching WaveformsTYPICAL CHARACTERISTICS-100D r a i n -S o u r c e B r e a k d o w n V o l t a g e , B V D S S (N o r m a l i z e d ) (V )Junction Temperature, T J (°С)-50502001001501.21.11.00.90.8Breakdown Voltage Variation vs.Temperature-100D r a i n -S o u r c e O n -R e s i s t a n c e , R D S (O N ) (N o r m a l i z e d ) (Ω)Junction Temperature, T J (°С)-50502001001503.002.01.00.50.01.52.5On-Resistance Junction Temperature101100.11Drain-to-Source Voltage, V DS (V)On-State Characteristics0.12Gate-Source Voltage, V GS (V)Transfer Characteristics468101010.1TYPICAL CHARACTERISTICS(Cont.)120000.1Drain-SourceVoltage, V DS (V)1000200110C iss800600Notes:1. V GS f = 1MHzC iss=+C gd (C ds =shorted)C oss =C +C gd C rss =C Capacitance Characteristics(Non-Repetitive)Total Gate Charge, Q G (nC)51525Note: I 81012106420V DS =120VV DS =300V V DS =480V 20Gate Charge CharacteristicsC ossC rss 400T h e r m a l R e s p o n s e , θJ C (t )P D (w )。