IRF730场效应管

FEATURESSYMBOLQUICK REFERENCE DATA• Repetitive Avalanche Rated • Fast switching• High thermal cycling performance • Low thermal resistanceGENERAL DESCRIPTIONPINNINGSOT78 (TO220AB)N-channel,enhancement mode PIN DESCRIPTIONfield-effect power transistor,intended for use in off-line switched 1gate mode power supplies,T.V.and computer monitor power supplies,2drain d.c.to d.c.converters,motor control circuits and general purpose 3source switching applications.tabdrainThe IRF730is supplied in the SOT78(TO220AB)conventional leaded package.LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETER CONDITIONSMIN.MAX.UNIT V DSS Drain-source voltage T j = 25 ˚C to 150˚C-400V V DGR Drain-gate voltage T j = 25 ˚C to 150˚C; R GS = 20 k Ω-400V V GS Gate-source voltage -± 30V I D Continuous drain current T mb = 25 ˚C; V GS = 10 V -7.2A T mb = 100 ˚C; V GS = 10 V - 4.6A I DM Pulsed drain current T mb = 25 ˚C -29A P DTotal dissipationT mb = 25 ˚C-125W T j , T stgOperating junction and - 55150˚Cstorage temperature rangeAVALANCHE ENERGY LIMITING VALUESLimiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOL PARAMETER CONDITIONSMIN.MAX.UNIT E ASNon-repetitive avalanche Unclamped inductive load, I AS = 4.8 A;-290mJenergyt p = 0.23 ms; T j prior to avalanche = 25˚C;V DD ≤ 50 V; R GS = 50 Ω; V GS = 10 V; refer to fig:17E AR Repetitive avalanche energy 1I AR = 7.2 A; t p = 2.5 µs; T j prior to-9.4mJ avalanche = 25˚C; R GS = 50 Ω; V GS = 10 V;refer to fig:18I AS , I ARRepetitive and non-repetitive -7.2Aavalanche current123tab1 pulse width and repetition rate limited by T j max.THERMAL RESISTANCESSYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT R th j-mb Thermal resistance junction --1K/W to mounting baseR th j-aThermal resistance junction in free air-60-K/Wto ambientELECTRICAL CHARACTERISTICST j = 25 ˚C unless otherwise specified SYMBOL PARAMETERCONDITIONSMIN.TYP.MAX.UNIT V (BR)DSS Drain-source breakdown V GS = 0 V; I D = 0.25 mA 400--V voltage∆V (BR)DSS /Drain-source breakdown V DS = V GS ; I D = 0.25 mA-0.1-%/K ∆T j voltage temperaturecoefficientR DS(ON)Drain-source on resistance V GS = 10 V; I D = 3.6 A -0.71ΩV GS(TO)Gate threshold voltage V DS = V GS ; I D = 0.25 mA 2.0 3.0 4.0V g fs Forward transconductance V DS = 30 V; I D = 3.6 A 24-S I DSS Drain-source leakage current V DS = 400 V; V GS = 0 V-125µA V DS = 320 V; V GS = 0 V; T j = 125 ˚C-30250µA I GSS Gate-source leakage current V GS = ±30 V; V DS = 0 V-10200nA Q g(tot)Total gate charge I D = 7.2 A; V DD = 320 V; V GS = 10 V -5262nC Q gs Gate-source charge-35nC Q gd Gate-drain (Miller) charge -2630nC t d(on)Turn-on delay time V DD = 200 V; R D = 27 Ω;-12-ns t rTurn-on rise time R G = 12 Ω-33-ns t d(off)Turn-off delay time -93-ns t f Turn-off fall time-42-ns L d Internal drain inductance Measured from tab to centre of die- 3.5-nH L d Internal drain inductance Measured from drain lead to centre of die - 4.5-nH L s Internal source inductance Measured from source lead to source -7.5-nH bond padC iss Input capacitance V GS = 0 V; V DS = 25 V; f = 1 MHz-620-pF C oss Output capacitance -108-pF C rssFeedback capacitance-63-pFSOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICST j = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN.TYP.MAX.UNIT I S Continuous source current T mb = 25˚C --7.2A (body diode)I SM Pulsed source current (body T mb = 25˚C--29A diode)V SD Diode forward voltage I S = 7.2 A; V GS = 0 V-- 1.2V t rr Reverse recovery time I S = 7.2 A; V GS = 0 V; dI/dt = 100 A/µs-270-ns Q rrReverse recovery charge- 3.3-µCMECHANICAL DATA1. This product is supplied in anti-static packaging. The gate-source input must be protected against staticdischarge during transport or handling.2. Refer to mounting instructions for SOT78 (TO220AB) package.3. Epoxy meets UL94 V0 at 1/8".DEFINITIONSData sheet statusObjective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.Limiting valuesLimiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application informationWhere application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1999All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.LIFE SUPPORT APPLICATIONSThese products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.。