2SC5617-T3中文资料

DC CURRENT GAIN vs. COLLECTOR CURRENT
1 000 VCE = 3 V
DC Current Gain hFE
100
10 0.1
1
10
100
Collector Current IC (mA)
4
Data Sheet PU10082EJ02V0DS
2SC5617
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
2SC5617
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter DC Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain RF Characteristics Gain Bandwidth Product Insertion Power Gain Noise Figure Reverse Transfer Capacitance fT S21e NF Cre
ORDERING INFORMATION
Part Number 2SC5617 2SC5617-T3 Quantity 50 pcs (Non reel) 10 kpcs/reel Supplying Form • 8 mm wide embossed taping • Pin 2 (Base) face the perforation side of the tape
14 12 10 8 6 4 2 0 1
VCE = 3 V f = 2 GHz
10 Collector Current IC (mA)
100
Data Sheet PU10082EJ02V0DS
5
2SC5617
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
VCE = 2 V f = 2 GHz
10 Collector Current IC (mA)
100
10 Collector Current IC (mA)
100
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
16
Gain Bandwidth Product fT (GHz)
Document No. PU10082EJ02V0DS (2nd edition) Date Published March 2002 CP(K) Printed in Japan
The mark • shows major revised points.
© NEC Corporation 2001 © NEC Compound Semiconductor Devices 2002
VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 10 mA, f = 2 GHz VCE = 3 V, IC = 3 mA, f = 2 GHz, ZS = Zopt VCB = 3 V, IE = 0 mA, f = 1 MHz
– 7.0 – –
12.0 8.5 1.5 0.4
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
Note 2 2
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
ICBO IEBO hFE
Note 1
VCB = 5 V, IE = 0 mA VEB = 1 V, IC = 0 mA VCE = 3 V, IC = 10 mA
– – 75
– – –
100 100 140
nA nA –
100 10 1 0.1 0.01 0.001 VCE = 2 V
Collector Current IC (mA)
0.0001 0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.0001 0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage VBE (V)
Base to Emitter Voltage VBE (V)
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
100 10 1 0.1 0.01 0.001 VCE = 1 V
Collector Current IC (mA)
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
35 30 25 20 15 10 |S21e|2 5 0 0.1 1 Frequency f (GHz) MSG MAG
VCE = 1 V IC = 10 mA
35 30 25 20 15 10 5 0 0.1 1 Frequency f (GHz) |S21e|2 MSG MAG
VCE = 2 V IC = 10 mA
300
Total Power Dissipation Ptot (mW)
250 200 150
Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) )
140
100 50
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
Ambient Temperature TA (˚C)
40
Collector Current IC (mA)
30
20
ቤተ መጻሕፍቲ ባይዱ
300 µ A 270 µ A 240 µ A 210 µ A 180 µ A 150 µ A 120 µ A 90 µ A 60 µ A 2 4 IB = 30 µ A 6 8
10
0.0001 0.4
0.5
0.6
0.7
0.8
0.9
1.0
Note
Ratings 9.0 6.0 2.0 30 140 150 −65 to +150
Unit V V V mA mW °C °C
Tj Tstg
2 Note Mounted on 1.08 cm × 1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
10
10
INSERTION POWER GAIN, MAG, MSG vs. FREQUENCY
Insertion Power Gain |S21e|2 (dB) Maximum Available Power Gain MAG (dB) Maximum Stable Power Gain MSG (dB)
– – 2.5 0.7
GHz dB dB pF
Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information.
16
Gain Bandwidth Product fT (GHz)
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT
16
Gain Bandwidth Product fT (GHz)
14 12 10 8 6 4 2 0 1
VCE = 1 V f = 2 GHz
14 12 10 8 6 4 2 0 1
DC CURRENT GAIN vs. COLLECTOR CURRENT
DC Current Gain hFE
100
DC Current Gain hFE
1 10 100
100
10 0.1
10 0.1
1
10
100
Collector Current IC (mA)
Collector Current IC (mA)
Rank Marking hFE Value EB Y1 75 to 110 FB Y2 95 to 140