HAF2017-90STL中文资料

HAF2017(L), HAF2017(S)Silicon N Channel Power MOS FETPower SwitchingREJ03G0234-0200Z(Previous ADE-208-1637 (Z))Rev.2.00Apr.13.2004 DescriptionsThis FET has the over temperature shutdown capability sensing the junction temperature. This FET has the built-in over temperature shutdown circuit in the gate area. And this circuit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over current etc..Features•Logic level operation (4 to 6 V Gate drive)•High endurance capability against to the short circuit•Built-in the over temperature shutdown circuit•Latch type shutdown operation (Need 0 voltage recovery)OutlineAbsolute Maximum Ratings(Ta = 25°C) Item Symbol Rating UnitDrain to source voltage V DSS60VGate to source voltage V GSS16VGate to source voltage V GSS–2.5VDrain current I D20ADrain peak current I D (pulse) Note140ABody-drain diode reverse drain current I DR20AChannel dissipation Pch Note50WChannel temperature Tch150°CStorage temperature Tstg–55 to +150°CNotes: 1.PW ≤ 10µs, duty cycle ≤ 1%2.Value at Tch = 25°CTypical Operation Characteristics(Ta = 25°C) Item Symbol Min Typ Max Unit Test ConditionsInput voltage V IH 3.5——VInput voltage V IL—— 1.2VInput current (Gate non shut down)I IH1——100µA Vi = 8V, V DS =0Input current (Gate non shut down)I IH2——50µA Vi = 3.5V, V DS =0Input current (Gate non shut down)I IL——1µA Vi = 1.2V, V DS =0Input current (Gate shut down)I IH(sd)1—0.8—mA Vi = 8V, V DS =0Input current (Gate shut down)I IH(sd)2—0.35—mA Vi = 3.5V, V DS =0Shutdown temperature Tsd—175—°C Channel temperatureGate operation voltage V OP 3.5—12VElectrical Characteristics(Ta = 25°C) Item Symbol Min Typ Max Unit Test conditionsDarin current I D11——A V GS = 3.5 V, V DS = 2 VDarin current I D2——10mA V GS = 1.2 V, V DS = 2 VDrain to source breakdown voltage V(BR)DSS60——V I D = 10 mA, V GS =0Gate to source breakdown V(BR)GSS16——V I G = 800 µA, V DS =0voltage V(BR)GSS–2.5——V I G = –100 µA, V DS =0Gate to source leak current I GSS1——100µA V GS = 8 V, V DS =0I GSS2——50µA V GS = 3.5 V, V DS =0I GSS3——1µA V GS = 1.2 V, V DS =0I GSS4——–100µA V GS = –2.4 V, V DS =0Input current (shut down)I GS(OP)1—0.8—mA V GS = 8 V, V DS =0I GS(OP)2—0.35—mA V GS = 3.5 V, V DS =0Zero gate voltage drain current I DSS——10µA V DS = 60 V, V GS = 0Gate to source cutoff voltage V GS(off) 1.4— 2.6V V DS = 10 V, I D = 1 mAForward transfer admittance|y fs|621—S I D =10 A, V DS =10 VStatic drain to source on state R DS(on)—3553mΩI D = 10 A, V GS = 4.5 V resistance R DS(on)—2743mΩI D = 10 A, V GS = 10 V Note3 Output capacitance Coss—460―pF V DS = 10 V, V GS =0, f = 1 MHz Turn-on delay time td(on)—8.7―µs V GS = 5 V, I D= 10 A, R L = 3 ΩRise time tr—44.6—µsTurn-off delay time td(off)—2―µsFall time tf— 2.6—µsBody-drain diode forward voltage V DF—0.9—V I F = 20A, V GS = 0Body-drain diode reverse recovery time trr—120—ns I F = 20 A, V GS = 0,diF/dt = 50 A/µsOver load shut down operation t os1—0.97—ms V GS = 5 V, V DD = 16 Vtime Note4t os2—0.57—ms V GS = 5 V, V DD = 24 V Notes: 3.Pulse test4.Include the time shift based on increasing of channel temperature when operate under over load condition.Main CharacteristicsPackage DimensionsOrdering InformationPart Name Quantity Shipping ContainerHAF2017-90L Max: 50 pcs/ sack SackHAF2017-90S Max: 50 pcs/ sack SackHAF2017-90STL1000 pcs/ Reel Embossed tapeHAF2017-90STR1000 pcs/ Reel Embossed tapeNote:For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. RENESAS SALES OFFICESRenesas Technology America, Inc.450 Holger Way, San Jose, CA 95134-1368, U.S.ATel: <1> (408) 382-7500 Fax: <1> (408) 382-7501Renesas Technology Europe Limited.Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United KingdomTel: <44> (1628) 585 100, Fax: <44> (1628) 585 900Renesas Technology Europe GmbHDornacher Str. 3, D-85622 Feldkirchen, GermanyTel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11Renesas Technology Hong Kong Ltd.7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong KongTel: <852> 2265-6688, Fax: <852> 2375-6836Renesas Technology Taiwan Co., Ltd.FL 10, #99, Fu-Hsing N. Rd., Taipei, TaiwanTel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999Renesas Technology (Shanghai) Co., Ltd.26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, ChinaTel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952Renesas Technology Singapore Pte. Ltd.1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632Tel: <65> 6213-0200, Fax: <65> 6278-8001。