MBR2H200SFT3G肖特基二极管原厂DCY品牌推荐

MBR2H200SFT3GSurface MountSchottky Power RectifierPlastic SOD−123FL PackageThis device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters,reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical.Features•Guardring for Stress Protection •Low Forward V oltage •Epoxy Meets UL 94 V−0•Package Designed for Optimal Automated Board Assembly •These are Pb−Free DevicesMechanical Characteristics•Reel Options: MBR2H200SFT3G = 10,000 per 13 in reel/8 mm tape •Device Marking: L2J•Polarity Designator: Cathode Band •Weight: 11.7 mg (approximately)•Case: Epoxy, Molded•Lead Finish: 100% Matte Sn (Tin)•Lead and Mounting Surface Temperature for Soldering Purposes:260°C Max. for 10 Seconds•Device Meets MSL 1 RequirementsSOD−123FLCASE 498Device Package Shipping†MBR2H200SFT3GSOD−123(Pb−Free)10000 / Tape &ReelMAXIMUM RATINGSRating Symbol Value UnitPeak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRMV RWMV R200VAverage Rectified Forward Current(T L = 108°C)I O 2.0APeak Repetitive Forward Current(Rated V R, Square Wave, 20 kHz, T C = 105°C)I FRM 4.0ANon−Repetitive Peak Surge Current(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)I FSM30A Storage and Operating Junction Temperature Range (Note 1)T stg, T J−55 to +150°CStresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.1.The heat generated must be less than the thermal conductivity fromJunction−to−Ambient: dP D/dT J < 1/R q JA.THERMAL CHARACTERISTICSCharacteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2)Y JCL23°C/W Thermal Resistance, Junction−to−Ambient (Note 2)R q JA85°C/W Thermal Resistance, Junction−to−Ambient (Note 3)R q JA330°C/W ELECTRICAL CHARACTERISTICSCharacteristic Symbol Value UnitMaximum Instantaneous Forward Voltage(Note 4)(I F = 1.0 A, T J = 25°C)(I F = 2.0 A, T J = 25°C)(I F = 1.0 A, T J = 125°C)(I F = 2.0 A, T J = 125°C)V F0.860.940.710.78VMaximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, T J = 25°C)(Rated dc Voltage, T J = 125°C)I R2002m AmAProduct parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.2.Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board.3.Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board.4.Pulse Test: Pulse Width ≤ 380 m s, Duty Cycle ≤ 2.0%.Figure 1. Typical Instantaneous ForwardCharacteristics Figure 2. Maximum Instantaneous ForwardCharacteristicsV F , INSTANTANEOUS FORWARD VOLTAGE (V)V F , INSTANTANEOUS FORWARD VOLTAGE (V)Figure 3. Typical Reverse CharacteristicsFigure 4. Maximum Reverse CharacteristicsV R , INSTANTANEOUS REVERSE VOLTAGE (V)V R , INSTANTANEOUS REVERSE VOLTAGE (V)1.E−11Figure 5. Typical Junction Capacitance Figure 6. Current Derating per DiodeV R , REVERSE VOLTAGE (V)T L , LEAD TEMPERATURE (°C)100101110100i F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )i F , I N S T A N T A N E O U S F O R W A R D C U R R E N T (A )I R , I N S T A N T A N E O U S R E V E R S E C U R R E N T (A )C , J U N C T I O N C A P A C I T A N C E (p F )I F (A V ), A V E R A G E F O R W A R D C U R R E N T (A )1.E−101.E−091.E−081.E−071.E−061.E−051.E−041.E−03I R , I N S T A N T A N E O U S R E V E R S E C U R R E N T (A )Figure 7. Forward Power DissipationI F(AV), AVERAGE FORWARD CURRENT (A)P F (A V ), A V E R A G E F O R W A R D P O W E R D I S S I P A T I O N (W )0.10.00001PULSE TIME (s)100100.10.010.00010.0010.011.0101000.0000011000R (t ) (C /W )1.00.10.00001PULSE TIME (s)100100.10.010.00010.0010.011.0101000.0000011000R (t ) (C /W )Figure 8. Thermal Response, Junction−to−Ambient (20 mm 2 pad)1.01000Figure 9. Thermal Response, Junction−to−Ambient (1 in 2 pad)SOD−123FLNOTES:1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982.2.CONTROLLING DIMENSION: MILLIMETER.3.DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.4.DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MMFROM THE LEAD TIP.Ebcmm inches0.910.036SOLDERING FOOTPRINT*DIM AMIN NOMMAX MINMILLIMETERS0.900.95 1.000.035INCHES A10.000.050.100.000b 0.700.90 1.100.028c 0.100.150.200.004D 1.50 1.65 1.800.059E 2.50 2.70 2.900.098L 0.550.750.950.0220.0370.0390.0020.0040.0350.0430.0060.0080.0650.0710.1060.1140.0300.037NOM MAX 3.40 3.60 3.800.1340.1420.150H E −−0°8°0°8°qqMBR2H200SFT3G。