超快恢复二极管 ES2K SMB(DO-214AA)系列规格书推荐

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超快恢复二极管 ES2M SMB(DO-214AA)系列规格书推荐

超快恢复二极管 ES2M SMB(DO-214AA)系列规格书推荐
FEATURES
CCLeoaamsdepFlMiareanette.FrSiianelis:ehMo/RordoldehersidnCgPoilnmafsoptrliimca.natti(oUNnLo) tFel1a)m("mPa"Sbuiliftfyix designates
VRMS 35 70 105 140 210 280 420 560 700
Maximum DC blocking voltage
VDC 50 100 150 200 300 400 600 800 1000
Maximum average forward rectified current
I(AV)
MAX 2.95 2.25 .20 .51 1.40 2.32 5.69 4.57 3.94
NOTE
MECHANICAL DATA
Case: JEDEC DO-214AA molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight :0.005 ounce, 0.138 grams
Cycles
Peak Forward Surge Current - Amperesversus Number Of Cycles At 60Hz - Cycles
Figure 5 New SMB Assembly
Round Lead Process
Figure 6 Reverse Recovery Time Characteristic And Test Circuit Diagram

超快恢复二极管 ES2B SMB(DO-214AA)系列规格书推荐

超快恢复二极管 ES2B SMB(DO-214AA)系列规格书推荐

MAX 2.95 2.25 .20 .51 1.40 2.32 5.69 4.57 3.94
NOTE
MECHANICAL DATA
Case: JEDEC DO-214AA molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight :0.005 ounce, 0.138 grams
CJ
25.0
Typical thermal resistance (NOTE 3)
RθJA
Operating junction and storage temperature range TJ T, STG
20.0 -50 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.Pulse test: Pulse width 200 sec, Duty cycle 2%
50Ω
10Ω
25Vdc
1Ω
Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive

ASEMI SS24(DO-214AC SMA)肖特基二极管规格书

ASEMI SS24(DO-214AC SMA)肖特基二极管规格书

ASEMI SS24(DO-214AC SMA)肖特基二极管规格书
我想用于充电器,可以吗?尺寸是多少呢?详见下解:
ASEMI品牌的SS24是2A 40V的贴片小二极管,属于肖特基封装,SMA超薄封装,小功率的,常用于家用的小功率电器,也常用于充电器,适配器
正向电流:2A
反向耐压:40V
芯片材质:GPP硅芯片
漏电流:0.5uA
操作温度:-40℃~150℃
正向电压:0.55V-0.95V
浪涌电流:30A
芯片尺寸:50mil
引线数量:2个
恢复时间:5ns
包装方式:5000/盘
这个品牌的打标采用的是镭射激光打标,不褪色,黑胶材质,外形黑体部分用环氧塑脂材料,包封稳定性好,引脚是无氧铜材质,导电性能好
常规包装是2000/盘
尺寸如下:
规格书。

DO-214AA封装瞬态抑制二极管(TVS二极管)SMBJ系列型号

DO-214AA封装瞬态抑制二极管(TVS二极管)SMBJ系列型号

Specialist of Overvoltage Protector

3、SMBJ 系列特性曲线
4、SMBJ瞬态抑制二极管型号
深圳市硕凯电子有限公司
Specialist of Overvoltage Protector
深圳市硕凯电子有限公司
Specialist of Overvoltage Protector
深圳市硕凯电子有限公司
型号大全: (1)5%偏差: SMBJ5.0A,SMBJ5.0CA,SMBJ6.0A,SMBJ6.0CA,SMBJ6.5A,SMBJ6.5CA, SMBJ7.0A,SMBJ7.0CA,SMBJ7.5A,SMBJ7.5CA,SMBJ8.0A,SMBJ8.0CA, SMBJ8.5A,SMBJ8.5CA,SMBJ9.0A,SMBJ9.0CA,SMBJ10A,SMBJ10CA, SMBJ11A,SMBJ11CA,SMBJ12A,SMBJ12CA,SMBJ13A,SMBJ13CA, SMBJ14A,SMBJ14CA,SMBJ15A,SMBJ15CA,SMBJ16A,SMBJ16CA, SMBJ17A,SMBJ17CA,SMBJ18A,SMBJ18CA,SMBJ19A,SMBJ19CA, SMBJ20A,SMBJ20CA,SMBJ22A,SMBJ22CA,SMBJ24A,SMBJ24CA, SMBJ26A,SMBJ26CA,SMBJ28A,SMBJ28CA,SMBJ30A,SMBJ30CA, SMBJ33A,SMBJ33CA,SMBJ36A,SMBJ36CA,SMBJ40A,SMBJ40CA, SMBJ43A,SMBJ43CA,SMBJ45A,SMBJ45CA,SMBJ48A,SMBJ48CA, SMBJ51A,SMBJ51CA,SMBJ54A,SMBJ54CA,SMBJ58A,SMBJ58CA, SMBJ60A,SMBJ60CA,SMBJ64A,SMBJ64CA,SMBJ70A,SMBJ70CA, SMBJ75A,SMBJ75CA,SMBJ78A,SMBJ78CA,SMBJ80A,SMBJ80CA, SMBJ85A,SMBJ85CA,SMBJ90A,SMBJ90CA,SMBJ100A,SMBJ100CA, SMBJ110A,SMBJ110CA,SMBJ120A,SMBJ120CA,SMBJ130A,SMBJ130CA, SMBJ140A,SMBJ140CA,SMBJ150A,SMBJ150CA,SMBJ160A,SMBJ160CA,

DO-214AA封装SOCAY瞬态抑制二极管SMBJ7.0A型号

DO-214AA封装SOCAY瞬态抑制二极管SMBJ7.0A型号

DO-214AA封装SOCAY瞬态抑制二极管SMBJ7.0A型号
硕凯电子(Sylvia)
一、产品图
1、为表面安装应用优化电路板空间
2、低泄漏
3、单向单元
4、玻璃钝化结
5、低电感
6、优良的钳位能力
7、600W的峰值功率能力在10×1000μ波形重复率(占空比):0.01%
8、快速响应时间:从0伏特到最小击穿电压通常小于1.0ps
9、典型的,在电压高于12V时,反向漏电流小于5μA
10、高温焊接:终端260°C/40秒
11、典型的最大温度系数△Vbr=0.1%x Vbr@25°C x△T
12、塑料包装有保险商实验室可燃性94V-0
13、无铅镀雾锡
14、无卤化,符合RoHS
15、典型失效模式是在指定的电压或电流下出现
16、晶须测试是基于JEDEC JESD201A每个表4a及4c进行的
17、IEC-61000-4-2ESD15kV(空气),8kV(接触)
18、数据线的ESD保护符合IEC61000-4-2(IEC801-2)
19、数据线的EFT保护符合IEC61000-4-4(IEC801-4)
三、应用范围
TVS器件非常适合保护I/O接口,Vcc总线和其他应用于电信、计算机、工业和消费电子应用的易损电路。

五、UL认证编号
六、I-V曲线特性
七、产品尺寸
八、命名方式
九、型号标识
十、封装说明。

快和超快恢复二极管型号参数

快和超快恢复二极管型号参数

20 20 10 10 10 10 20 20 20 20 10 10 10 10 20 20 20 10 10 10 45 45 45 40 40 35
35 35 35 35 50 50 35 35 35 35 35 35 50 50 35 35 35 35 35 35 30 30 30 75 75 150
30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 25 25 30 30 30 30 30 30 Max.Peak Forward Surge Current IFSM A 50 50 50 50 50 50
1.0 1.0 1.3 1.3 1.7 1.7 1.0 1.0 1.0 1.0 1.3 1.3 1.7 1.7 1.0 1.0 1.0 1.3 1.7 2.2 2.5 2.5 2.5 2.5 2.5 2.2
超快恢复二极管
反向重 最大平均正 复峰值 向电流 电压 VRRM V IO @ TA A ℃ 最大正向峰 值浪涌电流 IFSM A 正向电压降 VF @ IF V A 最大反向 典型结电 最大转速 电流 容 恢复时间 TA=25℃ 封装 IR Cj Trr μ A pF ns
型号
/main.asp 1 安培(含铅整流器) SF11S 50 SF12S 100 SF13S 150 SF14S 200 SF15S 300 SF16S 400 SF17S 500 SF18S 600 SF11 SF12 SF13 SF14 SF15 SF16 SF17 SF18 50 100 150 200 300 400 500 600 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 1.0 1.0 1.0 1.0 1.3 1.3 1.7 1.7 1.0 1.0 1.0 1.0 1.3 1.3 1.7 1.7 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 30 30 30 30 15 15 15 15 30 30 30 30 15 15 15 15 35 35 35 35 35 35 50 50 35 35 35 35 35 35 50 50 A-405 A-405 A-405 A-405 A-405 A-405 A-405 A-405 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41 DO-41

超快恢复二极管型号参数

超快恢复二极管型号参数
1.7
5.0
5.0
60
50
DO-201AD
Part Number
反向重复
峰值电压
最大平均正
向电流
最大正向峰值浪涌电流
正向电压降
最大反向电流TA=25℃
典型结电容
最大转速恢复时间
Package
VRRM
IO @ TA
IFSM
VF @ IF
IR
Cj
Trr
V
A

A
V
A
μA
pF
ns
6安培(含铅整流器)
SF61
600
2.0
55
50
1.7
2.0
5.0
30
50
DO-15
3安培(含铅整流器)
SF31
50
3.0
55
125
1.0
3.0
5.0
80
35
DO-201AD
SF32
100
3.0
55
125
1.0
3.0
5.0
80
35
DO-201AD
SF33
150
3.0
55
125
1.0
3.0
5.0
80
35
DO-201AD
SF34
200
SOD-57
Part Number
Peak Repetitive Reverse Voltage
Max.AverageRectified Current
Max.PeakForward Surge Current
Forward Voltage Drop
Max. Reverse Current TA=25℃

SS56肖特基势垒整流器SMB(DO-214AA)二极管规格书

SS56肖特基势垒整流器SMB(DO-214AA)二极管规格书

SYMBOLS SS52 SS53
SS54 SS55
SS56
SS58 SS510 SS5150 SS5200 UNITS
VRRM VRMS VDC I(AV)
20 14 20
30 21 30
40 28 40
50 35 50
60 42 60 5.0
80 56 80
100 70 100
150 105 150
FIG. 3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT,AMPERES
10.0
10 TJ=100 C 1
1
TJ=75 C 0.1
0.1
SS52-SS54 SS55-SS56 SS58-SS5150 SS5200
0.01 TJ=25 C
Hale Waihona Puke 0.001020
40
60
80
100
0.01
PERCENT OF PEAK REVERSE VOLTAGE,%
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
FIG. 5-TYPICAL JUNCTION CAPACITANCE
RATINGS AND CHARACTERISTIC CURVES SS52 THRU SS5200
AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
PEAK FORWARD SURGE CURRENT, AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
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CJ
25.0
Typical thermal resistance (NOTE 3)
RθJA
Operating junction and storage temperature range TJ T, STG
20.0 -50 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.Pulse test: Pulse width 200 sec, Duty cycle 2%
Cycles
Peak Forward Surge Current - Amperesversus Number Of Cycles At 60Hz - Cycles
Figure 5 New SMB Assembly
Round Lead Process
Figure 6 Reverse Recovery Time Characteristic And Test Circuit Diagram
FEATURES
CCLeoaamsdepFlMiareanette.FrSiianelis:ehMo/RordoldehersidnCgPoilnmafsoptrliimca.natti(oUNnLo) tFel1a)m("mPa"Sbuiliftfyix designates
MAX 2.95 2.25 .20 .51 1.40 2.32 5.69 4.57 3.94
NOTE
MECHANICAL DATA
Case: JEDEC DO-214AA molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight :0.005 ounce, 0.138 grams
2.2
2.0
2 Amps 1
.6 .4
.2 .1 .06 .04
.02 .01
.4
.8 1.2 1.6 2.0 2.4 Volts
1.8 1.6
1.4
1.2 Amps
1.0
.8
.6
.4 Single Phase, Half Wave
.2 60Hz Resistive or Inductive Load
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
Pulse Generator
Note 2
Oscilloscope Note 1
trr +0.5A
0 -0.25
-1.0 1cm
Set Time Base for 20/100ns/cm
3 of 3
Classification Rating 94V-0 and MSL rating 1 Easy Pick And Place High Temp Soldering: 260°C for 10 Seconds At Terminals Ultrafast Recovery Times For High Efficiency
RATINGS AND CHARACTERISTIC CURVES ES2A THRU ES2M
Figure 1 Typical Forward Characteristics
20
10
ES2G-2J
6
4
ES2A -2D
ES2K-2M
Figure 2 Forward Derating Curve 2.4
0 0
25 50 75 100 125 150
°C
Average Forward Rectified Current - Amperesversus Ambient Temperature -°C
Instantaneous Forward Current - Amperes versus Instantaneous Forward Voltage - Volts
4.High Temperature Solder Exemptions Applied, see EU Directive Annex 7.
UNITS VOLTS VOLTS VOLTS
Amps
Amps
Volts µA ns pF C/W C
1 of 3

深圳理悠科技有限公司

深圳理悠科技有限公司
ES2A THRU ES2M
DO-214AA (HSMB) (Round Lead)
H Cathode Band
J
A
C
SURFACE MOUNT SUPER FAST RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 2.0 Amperes
Figure 3 Junction Capacitance
100 60 40
20 pF
10
6 4
2 1
.1 .2 .4
TJ=25°C
12
4
Volts
10 20 40
Junction Capacitance - pFversus Reverse Voltage - Volts
100 200 400
1000
2 of 3

深圳理悠科技有限公司
RATINGS AND CHARACTERISTIC CURVES ES2A THRU ES2M
Figure 4 Peak Forward Surge Current
50
40
30 Amps
20
10
0 12
4 6 8 10 20 40 60 80 100
VF
0.975
1.35
1.7
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
IR
5.0 150.0
Maximum reverse recovery time (NOTE 1)
trr
50
60
100
Typical junction capacitance (NOTE 2)
VRMS 35 70 105 140 210 280 420 560 700
Maximum DC blocking voltage
VDC 50 100 150 200 300 400 600 800 1000
Maximum average forward rectified current
I(AV)
E F
G
D
B
INCHES
DIMENSIONS MM
DIM
MIN
A
.078
B
.075
C
.002
D
-----
E
.035
F
.065
G
.205
H
.160
J
.130
MAX .116 .089 .008 .02 .055 .091 .224 .180 .155
MIN 1.98 1.90 .05 ----.90 1.65 5.21 4.06 3.30
Part Number
SYMBOLS ES2A ES2B ES2C ES2D ES2E ES2G ES2J ES2K ES2M
Maximum repetitive peak reverse voltage
VRRM 50 100 150 200 300 400 600 800 1000
Maximum RMS voltage
2.0
at TL=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
50.0
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 2.0A
50Ωห้องสมุดไป่ตู้
10Ω
25Vdc
1Ω
Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive
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